CN103022225A - Method for manufacturing island-shaped growth structure back electrode - Google Patents

Method for manufacturing island-shaped growth structure back electrode Download PDF

Info

Publication number
CN103022225A
CN103022225A CN201110282420XA CN201110282420A CN103022225A CN 103022225 A CN103022225 A CN 103022225A CN 201110282420X A CN201110282420X A CN 201110282420XA CN 201110282420 A CN201110282420 A CN 201110282420A CN 103022225 A CN103022225 A CN 103022225A
Authority
CN
China
Prior art keywords
back electrode
silver metal
light
island structure
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201110282420XA
Other languages
Chinese (zh)
Inventor
简唯伦
刘幼海
刘吉人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jifu New Energy Technology Shanghai Co Ltd
Original Assignee
Jifu New Energy Technology Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jifu New Energy Technology Shanghai Co Ltd filed Critical Jifu New Energy Technology Shanghai Co Ltd
Priority to CN201110282420XA priority Critical patent/CN103022225A/en
Publication of CN103022225A publication Critical patent/CN103022225A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a method for manufacturing an island-shaped growth structure back electrode. A convex island-shaped structure is formed on the surface by adopting a silver metal back electrode island-shaped structure deposition film forming mechanism theory, so that the directivity of scattering of reflected light after incident light reaches the back electrode is improved, a traveling distance of the light on an absorption layer is increased, and the power generation efficiency of a solar battery is improved. By the method, a substrate is obtained; a silver metal back electrode film is plated by a sputtering method; when the temperature of the substrate is relatively high, the silver metal can be deposited to form a film in a manner of an island-shaped structure; and by the deposition characteristic, the convex island-shaped structure is formed on the surface, so that the aims of enlarging the surface area of the metal back electrode, enhancing reflected light traveling angle distribution, increasing the traveling distance of the light in a solar module and greatly enhacing the effective light source of the solar battery are fulfilled.

Description

Make the method for island growth structure back electrode
Technical field
The present invention is a kind of directivity that can effectively increase the light scattering of incident light arrival back electrode back reflection, promote light at the travel distance of absorbed layer, improve solar energy efficient, its main purpose: the mechanism principle that adopts silver metal back electrode deposition film forming, make its surface form the island structure of convex, increase the directivity that incident light arrives the light scattering of back electrode back reflection, promote light at the travel distance of absorbed layer, to increase solar cell power generation efficient.
Background technology
Be the solar cell that is coated with back electrode structure at the first processing procedure, because and have transparent conducting glass that texture (velvet-like) surface is arranged unlike the solar cell that is coated with first front electrode, so lack light in the structure of component internal scattering, increase light travel distance, if improve scattered power, need to install scattering device additional before the battery light inlet, cost is quite high.If effectively improve this shortcoming, just can promote whole efficiency.
Summary of the invention
The present invention mainly is the mechanism principle that adopts silver metal back electrode island structure deposition film forming, make its surface form the island structure of convex, increase the directivity that incident light arrives the light scattering of back electrode back reflection, promote light at the travel distance of absorbed layer, to increase solar cell power generation efficient.Obtain first a substrate, utilize method for sputtering to be coated with silver metal back electrode film.When substrate temperature is higher, silver metal can deposit film forming with island structure, we can use this deposition characteristics, make its surface form the island structure of convex, its purpose is to increase the surface area of silver metal back electrode, travel angle distributes after promoting the light reflection, increases light in the expert footpath of solar components distance, to promote the solar cell efficient light sources.
Specific implementation method:
I is with the present invention's accompanying drawing of arranging in pairs or groups, and be described in detail as follows: Fig. 1 is the schematic diagram of island growth structure back electrode of the present invention, by learning among the figure, obtain at the beginning a substrate (1), put it in the sputter vacuum cavity, in being coated with process, its substrate temperature is promoted to 200 ℃, at this moment, silver metal is because of temperature effect, and membrane formation mechanism is transformed into the island mode and deposits (3), this behavior, make its glass film surface form the island structure of convex, produced many extra surface areas.
Fig. 2 is the light course figure of the island structure of convex of the present invention, when light runs into back electrode reflex time (2), and when crossing the island structure (4) of convex, a scattering angle narrow distribution of advancing; , owing to increase the light contact surface area, so can promote the light scattering angular distribution, improve light and be travel distance in the assembly during via the island structure (5) of the convex of rete with respect to light, effectively increase the utilance of incident light, promote solar energy industry and advance to strive ability.
  
More than explanation is just illustrative, nonrestrictive for the purpose of the present invention; those of ordinary skills understand; in the situation that does not break away from the spirit and scope that claim limits, can make many corrections, variation or equivalence, but all will fall within protection scope of the present invention.
Description of drawings: following for the present invention is further described by reference to the accompanying drawings, Fig. 1 is the schematic diagram that back electrode film of the present invention is coated with.Fig. 2 is the schematic diagram of light course of the island structure of convex of the present invention.
The main symbol description of icon.
1 ... glass
2 ... the silver metal reflector
3 ... the island structure of convex (island structure growth)
4 ... the walk course of island structure dorsum electrode layer of non-convex of light
5 ... the course of the island structure dorsum electrode layer of light walking convex of the present invention.

Claims (4)

1. the present invention mainly is the mechanism principle that adopts silver metal back electrode island structure deposition film forming, make its surface form the island structure of convex, increase the directivity that incident light arrives the light scattering of back electrode back reflection, promote light at the travel distance of absorbed layer, to increase solar cell power generation efficient, obtain first a substrate, utilize method for sputtering to be coated with silver metal back electrode film, when substrate temperature is higher, silver metal can deposit film forming with island structure, we can use this deposition characteristics, make its surface form the island structure of convex, its purpose is to increase the surface area of silver metal back electrode, promotes the rear travel angle of light reflection and distributes, increase light in the expert footpath of solar components distance, greatly promote the solar cell efficient light sources.
2. a kind of silver metal back electrode island structure according to claim 1 deposits the method for film forming, in being coated with process, its substrate temperature is promoted to uniform temperature (being about 200 ℃), and silver metal is because of temperature effect, and membrane formation mechanism is transformed into the island mode and deposits.
3. according to the method for a kind of silver metal back electrode island structure deposition film forming claimed in claim 1, silver metal at the beginning island structure is grown up, and namely forms the silver metal thin film back electrode of continuity convex island structure after being coated with for a long time.
4. the method for a kind of silver metal back electrode island structure deposition film forming according to claim 1, substrate need not any specific structural constraints, and the process temperatures that need only bear 200 ℃ gets final product.
CN201110282420XA 2011-09-22 2011-09-22 Method for manufacturing island-shaped growth structure back electrode Pending CN103022225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110282420XA CN103022225A (en) 2011-09-22 2011-09-22 Method for manufacturing island-shaped growth structure back electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110282420XA CN103022225A (en) 2011-09-22 2011-09-22 Method for manufacturing island-shaped growth structure back electrode

Publications (1)

Publication Number Publication Date
CN103022225A true CN103022225A (en) 2013-04-03

Family

ID=47970583

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110282420XA Pending CN103022225A (en) 2011-09-22 2011-09-22 Method for manufacturing island-shaped growth structure back electrode

Country Status (1)

Country Link
CN (1) CN103022225A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101246922A (en) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 Method for reinforcing optical capturing effect of thin film photovoltaic device
CN101488532A (en) * 2008-01-16 2009-07-22 财团法人工业技术研究院 Back electrode module of solar cell
CN101752454A (en) * 2008-12-04 2010-06-23 上海空间电源研究所 Preparation method of ultrathin Cu-In-Ga-Se thin film solar cell with light trap structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101246922A (en) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 Method for reinforcing optical capturing effect of thin film photovoltaic device
CN101488532A (en) * 2008-01-16 2009-07-22 财团法人工业技术研究院 Back electrode module of solar cell
CN101752454A (en) * 2008-12-04 2010-06-23 上海空间电源研究所 Preparation method of ultrathin Cu-In-Ga-Se thin film solar cell with light trap structure

Similar Documents

Publication Publication Date Title
US9023681B2 (en) Method of fabricating heterojunction battery
TWI408825B (en) A solar cell apparatus having the transparent conducting layer with the periodic structure
CN102332499B (en) Method for utilizing microparticles to produce double-textured transparent electrode
CN204361108U (en) A kind of HIT solar cell
CN102394258B (en) Preparing method of high-conductivity front electrode of thin film solar cell
CN105140308A (en) Fabrication method for copper-plating electrode of heterojunction solar cell
CN103022225A (en) Method for manufacturing island-shaped growth structure back electrode
CN103022228A (en) Technology for manufacturing metal back electrode of high-efficiency solar battery by flocky structure etching technology
CN103022231A (en) Technology of high-transparency high-effect transparent conducting layer with buffer layer fuzzy structure
WO2011090468A3 (en) Highly-conductive and textured front transparent electrode for a-si thin-film solar cells, and/or method of making the same
CN103022222A (en) Technology for manufacturing metal back electrode of high-efficiency solar battery by etching and plasma surface treatment
CN103022161A (en) Back electrode for manufacturing island-shaped growth structure with high electric conduction, high light reflection and low light loss
KR101578813B1 (en) Scattering metal-nanostructure-layer covered electrode and solar cell using the same, and a methods of manufacturing them
CN103824968B (en) A kind of OLED display device encapsulation cover plate
JP2008034687A (en) Photoelectric conversion element
CN103094375A (en) Novel aluminum nanometer particle surface plasmon enhanced solar battery
CN102368513B (en) Preparation method of double-structure suede transparent conducting oxide thin film of thin film cell
CN203553179U (en) Micro-nano texture of thin film solar cell
KR101541856B1 (en) A Method For Manufacturing A CIGS Solar Cell By Applying A Transparent Subtrate For A Solar Cell
CN204315594U (en) Based on the solar cell of silicon nanowire array
WO2015045809A1 (en) Solar cell
KR101306390B1 (en) Solar cell and method of fabricating the same
CN106328728B (en) A kind of CIGS thin-film power generating glass laser grooving and scribing method
CN103022221A (en) Method for enhancing light refractive index of light transmitting layer by mainly adopting ion bombardment method
CN204375768U (en) Based on the solar cell of silicon nanowires three-dimensional structure

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130403