CN101488532A - Back electrode module of solar cell - Google Patents
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- CN101488532A CN101488532A CN 200810004005 CN200810004005A CN101488532A CN 101488532 A CN101488532 A CN 101488532A CN 200810004005 CN200810004005 CN 200810004005 CN 200810004005 A CN200810004005 A CN 200810004005A CN 101488532 A CN101488532 A CN 101488532A
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Abstract
The invention discloses a back electrode module of a solar cell and a manufacture method thereof. The back electrode module comprises a transparent conducting layer, a plurality of nanometer scattering points and a metal layer. A plurality of nanometer scattering points are positioned in the transparent conducting layer and the metal layer is positioned on the transparent conducting layer.
Description
Technical field
The present invention relates to a kind of solar cell and be particularly related to a kind of back electrode module of thin film solar cell.
Background technology
Solar energy be a kind of have never exhaust and the free of contamination energy, when solving pollution that present fossil energy faced and problem of shortage, be the focus that attracts most attention always.Wherein, solar cell (solarcell) can be an electric energy with solar energy converting directly, is present considerable research topic.
The typical the most basic structure of solar cell can be divided into substrate, P-N diode, anti-reflecting layer and four major parts of two metal electrodes.Its work principle mainly is to see through the photovoltaic special efficacy to answer.Briefly, substrate (substrate) is the main body of solar cell; The P-N diode is the source that the photovoltaic special efficacy is answered; Anti-reflecting layer is to strengthen photoelectric current in the minimizing reflection of incident light; Metal electrode then is Connection Element and extraneous load.After sunlight was via glass substrate incident, P-N tied formed carrier depletion district and can absorb sunlight and produce electron-hole pair.And in P type and the N type semiconductor thereby have negative, positive electric charge respectively, therefore the internal electric field of its formation will cause electron-hole pair to separate, make electronics to n type district drift (drift), and relatively, the hole drifts about to p type district, that is produce from the drift current of N type district to p type island region, promptly so-called photoelectric current (photocurrent).The photoelectric current that is produced transfers to via metal electrode that load can use again.
Generally speaking, the electrode in the solar module can be separately positioned on the surface of not irradiation and irradiation, for extraneous line.The lip-deep electrode of irradiation normally all is not coated with the so-called rear surface of last layer electric field on the surface by irradiation not (back surface field, BSF) metal level is formed.The BSF metal level can increase the collection of charge carrier, and also recyclable do not have an absorbed photon.And the lip-deep electrode of irradiation except wanting to collect charge carrier effectively, and will reduce the ratio that metal wire covers incident light as far as possible, therefore, from the strip metal electrode, stretches out the metal electrode of the very thin finger shapes such as (finger) of row.The material of solar cell metallic electrode is the alloy of aluminium and other metals normally, but in thin-film solar cells, the requirement of body formed in order to reach (monolithically), thereby the lip-deep metal electrode of irradiation then can use electrically conducting transparent oxide (transparent conductive oxide, TCO).
Except semiconductor, Schottky (Schottky) diode that the metal-semiconductor contact forms, and the metal-insulator semiconductor (MIS) of metal-oxide semiconductor (MOS) (MOS) similar, organic substance or polymer all can be used to the photoelectric conversion layer when solar cell.In addition, solar cell also not necessarily will see through the photovoltaic special efficacy and answer, and the photo-electrochemical effect of dye-sensitized cell also can produce voltage behind irradiation.
In fact, in the process of light-electricity conversion, be not that all incident light spectrum can both be absorbed and change into fully electric current by solar cell.Spectrum about half is arranged because of energy too low (less than semi-conductive energy gap), not contribution of output to battery, and again in second half absorbed photon, except producing the required energy of electron-hole pair, there is the energy about half to discharge approximately, so the peak efficiency of single battery is about about 25% with the form of heat.
Therefore, research and propose the thickness that increases photoelectric conversion layer for promoting the efficient of solar cell, having, to increase the travel path of incident light.But the material cost of some photoelectric conversion layer is very high and speed that form is very slow, and therefore, the material cost of the method will significantly increase with the normal process time.
Another kind method then is that electrode material is carried out coarse grooveization (textured) surface treatment, to produce rough surface, makes light produce scattering (scattering), reduces reflection of incident light, and increases the travel distance of incident light in photoelectric conversion layer.But this a kind of method only can increase the scattering of short wavelength's light, and is very limited for the improved efficiency of solar cell.Patent relevant for this class can be with reference to U.S. Patent number US-04694116 or US-06787692.
In addition, WO2005/076370 proposes a kind of back electrode, and it utilizes transparency conducting layer to replace traditional aluminium, silver, molybdenum or copper electrode, and reaches reflection of light by white dielectric pigment, and making light catch effect increases.Yet the thickness of the transparency conducting layer that this structure is not only required is very thick, and very limited to the effect of solar battery efficiency improvement.
Summary of the invention
The present invention is providing a kind of back electrode module exactly, and it can increase the scattering of long wavelength's light, improves the path that incident light and reverberation are advanced in photoelectric conversion layer, promotes the efficient of solar cell.
The present invention is providing a kind of manufacture method of back electrode module, and it can promote the efficient of solar cell, reduces the cost of material, shortens the time of technology.
The present invention proposes a kind of back electrode module of solar cell, and it comprises transparency conducting layer, a plurality of nanometer scattering point and the first metal layer.A plurality of nanometer scattering points are arranged in transparency conducting layer.The first metal layer is positioned on the above-mentioned transparency conducting layer.
Described according to the embodiment of the invention, in the back electrode module of above-mentioned solar cell, the size of above-mentioned those nanometer scattering points is that tens nanometer is to hundreds of nanometers.
Described according to the embodiment of the invention, in the back electrode module of above-mentioned solar cell, above-mentioned those nanometer scattering points are a plurality of nano metal individual particles, a plurality of nano metal aggregate or its combination.
Described according to the embodiment of the invention, in the back electrode module of above-mentioned solar cell, the material of above-mentioned those nano metal individual particles or above-mentioned those nano metal aggregates be with the refringence of above-mentioned transparency conducting layer apart from the material more than 0.1.
Described according to the embodiment of the invention; in the back electrode module of above-mentioned solar cell, the material of above-mentioned those nano metal individual particles or above-mentioned those nano metal aggregates comprises gold, silver, aluminium, tin, nickel, platinum, titanium, vanadium, molybdenum, tungsten, indium or its combination.
Described according to the embodiment of the invention, in the back electrode module of above-mentioned solar cell, above-mentioned those nanometer scattering points are a plurality of nano apertures, among second metal level of these nano apertures in above-mentioned transparency conducting layer, between a plurality of metal individual particles, or a plurality of metal agglomeration things between, or between the aforementioned combination.
Described according to the embodiment of the invention, in the back electrode module of above-mentioned solar cell, the material of above-mentioned transparency conducting layer comprises indium tin oxide (indium tin oxide, ITO), fluorine doped tin oxide (fluorinedoped tin oxide, FTO), Al-Doped ZnO (aluminium doped zinc oxide, AZO), gallium-doped zinc oxide (gallium doped zinc oxide, GZO) or its combination.
The present invention proposes a kind of manufacture method of back electrode module of solar cell again.The method comprises the formation transparency conducting layer, and forms a plurality of nanometer scattering points and form the first metal layer in transparency conducting layer on transparency conducting layer.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, the method that forms above-mentioned transparency conducting layer and above-mentioned those nanometer scattering points comprises the formation first electrically conducting transparent sublayer; On the above-mentioned first electrically conducting transparent sublayer, form second metal level; Form the second electrically conducting transparent sublayer, make itself and the first electrically conducting transparent sublayer form above-mentioned transparency conducting layer; Carry out heating process, make the metallic atom autohemagglutination of above-mentioned second metal level form above-mentioned those nanometer scattering points.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, above-mentioned those nanometer scattering points are nano metal individual particle, nano metal aggregate, nano aperture or its combination.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, the material of above-mentioned second metal level is that the refringence of above-mentioned transparency conducting layer is apart from the material more than 0.1.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, the material of above-mentioned second metal level comprises gold, silver, aluminium, tin, nickel, platinum, titanium, vanadium, molybdenum, tungsten, indium or its combination.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, above-mentioned heating process carried out before forming the above-mentioned second electrically conducting transparent sublayer.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, above-mentioned heating process carries out after forming the above-mentioned second electrically conducting transparent sublayer.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, the method that forms above-mentioned transparency conducting layer and above-mentioned those nanometer scattering points comprises: form the first electrically conducting transparent sublayer, afterwards, on the above-mentioned first electrically conducting transparent sublayer, directly form above-mentioned those nanometer scattering points, afterwards, on above-mentioned those nanometer scattering points, form the second electrically conducting transparent sublayer.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, the method that forms above-mentioned those nanometer scattering points is to be directly to form on the above-mentioned first electrically conducting transparent sublayer a plurality of metal individual particles, a plurality of metal agglomeration thing or its combination.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, above-mentioned those nanometer scattering points are above-mentioned those metal individual particles, above-mentioned those nano metal aggregates or its combination, and above-mentioned those nanometer scattering points are that the size of above-mentioned those metal individual particles, above-mentioned those nano metal aggregates is tens of to hundreds of nanometers.
Described according to the embodiment of the invention; in the manufacture method of the back electrode module of above-mentioned solar cell, the material of above-mentioned those nano metal individual particles or above-mentioned those nano metal aggregates be with the refringence of above-mentioned transparency conducting layer apart from the material more than 0.1.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, the material of above-mentioned those nano metal individual particles or above-mentioned those nano metal aggregates comprises silver, platinum, palladium, molybdenum or its combination.
Described according to the embodiment of the invention, in the manufacture method of the back electrode module of above-mentioned solar cell, above-mentioned those nanometer scattering points are a plurality of nano apertures, and above-mentioned those nano apertures are the gap that is not covered by the above-mentioned second electrically conducting transparent sublayer between above-mentioned those metal individual particles, between the gap that is not covered by the above-mentioned second electrically conducting transparent sublayer between above-mentioned those metal agglomeration things or above-mentioned those metal individual particles and above-mentioned those metal agglomeration things not by the gap of above-mentioned second electrically conducting transparent sublayer covering, or be aforesaid combination, and the size in above-mentioned those gaps is tens of to hundreds of nanometers.
The formation that the present invention sees through the nanometer scattering point can increase the scattering of long wavelength's light, improves the path that incident light and reverberation are advanced in photoelectric conversion layer, promotes the efficient of solar cell, reduces the cost of material, shortens the time of technology.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A is the generalized section of the back electrode module of a kind of solar cell of illustrating according to the embodiment of the invention.
Figure 1B is the generalized section of the back electrode module of the another kind of solar cell that illustrates according to the embodiment of the invention.
Fig. 2 A to 2B or 2B-1 are the generalized sections of the manufacturing process of a kind of back electrode module of illustrating according to one embodiment of the invention.
Fig. 3 A to 3C or 3C-1 are the generalized sections of the manufacturing process of the another kind of back electrode module that illustrates according to another embodiment of the present invention.
Fig. 4 A to 4B or 4B-1 are the generalized sections of the manufacturing process of the another kind of back electrode module that illustrates according to further embodiment of this invention.
Description of reference numerals
10,100: photoelectric conversion layer 20,200: back electrode module
12,102: transparency conducting layer 14a, 104a: metallic particles, metal agglomeration thing
14c, 104b: hole or gap 14b, 16,104,106: metal level
102a, 102b: electrically conducting transparent sublayer
Embodiment
Figure 1A and 1B are respectively the generalized sections of the back electrode module of the solar cell that illustrates according to the embodiment of the invention.
Please refer to Figure 1A, the back electrode module 20 of solar cell is arranged on the photoelectric conversion layer 10, and it comprises transparency conducting layer 12, metal level 16 and is positioned at a plurality of nanometer scattering point 14a among the transparency conducting layer 12.The material of transparency conducting layer 12 for example is that transparent conductive oxide is such as being indium tin oxide (indium tin oxide, ITO), fluorine doped tin oxide (fluorine doped tin oxide, FTO), Al-Doped ZnO (aluminium doped zinc oxide, AZO), gallium-doped zinc oxide (gallium doped zincoxide, GZO) or its combination or its combination.The material of metal level 16 for example is aluminium, silver, molybdenum or copper etc.Nanometer scattering point 14a can be nano metal individual particle, nano metal aggregate or its combination, and its size for example is that tens nanometer is to hundreds of nanometers.The material of nano metal individual particle or nano metal aggregate be with the refringence of transparency conducting layer 12 apart from the material more than 0.1, for example be gold, silver, aluminium, tin, nickel, platinum, titanium, vanadium, molybdenum, tungsten, indium or its combination.
Please refer to Figure 1B, the back electrode module 20 of solar cell is arranged on the photoelectric conversion layer 10, and it comprises transparency conducting layer 12, metal level 16 and is positioned at metal level 14b among the transparency conducting layer 12.The material of transparency conducting layer 12 for example is that transparent conductive oxide is such as being ITO, FTO, AZO, GZO or its combination.The material of metal level 16 for example is aluminium, silver, molybdenum or copper etc.Metal level 14b can be a metallic diaphragm.Have a plurality of nano aperture 14c among the metal level 14b, as the nanometer scattering point.The size of nano aperture 14c for example is that tens nanometer is to hundreds of nanometers.Metal level 14b described herein also can be a plurality of nano metal individual particles, a plurality of nano metal aggregate or its combination.Nano aperture 14c then is the gap between gap, the gap between the nano metal aggregate or nano metal individual particle and the nano metal aggregate between the nano metal individual particle, or is aforesaid combination.Metal level 14b material can be with the refringence of transparency conducting layer 12 apart from the material more than 0.1, for example be gold, silver, aluminium, tin, nickel, platinum, titanium, vanadium, molybdenum, tungsten, indium or its combination.
The present invention forms a plurality of scattering points in the transparency conducting layer of back electrode module, can increase the scattering of long wavelength's's (for example being the 650-800 nanometer) light, improve the path that incident light and reverberation are advanced in photoelectric conversion layer, light can more effectively be absorbed by photoelectric conversion layer, therefore, can significantly rise the efficient of solar cell.
Fig. 2 A to 2B or 2B-1 are the generalized sections of the manufacturing process of a kind of back electrode module of illustrating according to one embodiment of the invention.
Please refer to Fig. 2 A, on the photoelectric conversion layer 100 of solar cell, form electrically conducting transparent sublayer 102a.The material of electrically conducting transparent sublayer 102a for example is transparent conductive oxide (TCO), such as being indium tin oxide (ITO), fluorine doped tin oxide (FTO), Al-Doped ZnO AZO), gallium-doped zinc oxide (GZO) or its combination.The formation method of electrically conducting transparent sublayer 102a is chemical vapour deposition technique (CVD), sputtering method (sputtering method) or other suitable methods for example.
Then, on the 102a of electrically conducting transparent sublayer, form metal level 104.The material of metal level 104 be with the refringence of electrically conducting transparent sublayer 102a apart from the material more than 0.1, for example be gold, silver, aluminium, tin, nickel, platinum, titanium, vanadium, molybdenum, tungsten, indium or its combination.The formation method of metal level 104 is sputtering method or other suitable methods for example.Afterwards, on the 102a of electrically conducting transparent sublayer, form another layer electrically conducting transparent sublayer 102b.The material of electrically conducting transparent sublayer 102b for example is a transparent conductive oxide, such as being ITO, FTO, AZO, GZO or its combination.The formation method of electrically conducting transparent sublayer 102b is chemical vapour deposition technique, sputtering method or other suitable methods for example.
Afterwards, please refer to Fig. 2 B and 2B-1, carry out heating process.The temperature of heating process for example is 100 to 200 degree.In one embodiment, carry out heating process and will make the metal autohemagglutination of metal level 104, form a plurality of nano metal individual particles, a plurality of nano metal aggregate or its combination 104a, and made up formed transparency conducting layer 102 coatings by electrically conducting transparent sublayer 102a and 102b around it.Nano metal individual particle, a plurality of nano metal aggregate or its combination 104a are promptly as nanometer radiation point, shown in Fig. 2 B.In another embodiment, please refer to Fig. 2 B-1, carry out heating process, make to form the metal autohemagglutination of metal level 104 a plurality of nano metal individual particles, a plurality of nano metal aggregate or its combination 104a, or be to form another metallic diaphragm 104a.And electrically conducting transparent sublayer 102a and 102b will fuse and form transparency conducting layer 102 after carrying out heating process.But, not covered at the gap 104b that in collecting process, between nano metal individual particle or nano metal aggregate, is produced by transparency conducting layer 102, these gaps 104b is called nano aperture again, promptly as nanometer radiation point.
Afterwards, on transparency conducting layer 102, form metal level 106 again,, finish the making of back electrode module 200 with as contact electrode.The material of metal level 106 for example is aluminium, silver, molybdenum or copper etc.The formation method of metal level 106 is sputtering method or other suitable methods for example.
Fig. 3 A to 3C or 3C-1 are the generalized sections of the manufacturing process of the another kind of back electrode module that illustrates according to another embodiment of the present invention.
Please refer to Fig. 3 A, on the photoelectric conversion layer 100 of solar cell, form electrically conducting transparent sublayer 102a.The material of electrically conducting transparent sublayer 102a for example is a transparent conductive oxide, such as being ITO, FTO, AZO, GZO or its combination.The formation method of electrically conducting transparent sublayer 102a is chemical vapour deposition technique, sputtering method or other suitable methods for example.Then, on the 102a of electrically conducting transparent sublayer, form metal level 104.The material of metal level 104 be with the refringence of electrically conducting transparent sublayer 102a apart from the material more than 0.1, for example be gold, silver, aluminium, tin, nickel, platinum, titanium, vanadium, molybdenum, tungsten, indium or its combination.The formation method of metal level 104 is sputtering method or other suitable methods for example.
Afterwards, please refer to Fig. 3 B, carry out heating process, make the metal autohemagglutination of metal level 104 to form a plurality of metal individual particles, a plurality of metal agglomeration thing or its combination 104a, its gap each other is 104b.The size of metal individual particle or metal agglomeration thing can be a nano-scale or bigger.The temperature of heating process for example is 100 to 200 degree.
Afterwards, please refer to Fig. 3 C, form another layer electrically conducting transparent sublayer 102b on the 102a of electrically conducting transparent sublayer and around nano metal individual particle or the nano metal aggregate 104a, to constitute transparency conducting layer 102.The material of another electrically conducting transparent sublayer 102b for example is a transparent conductive oxide, such as being ITO, FTO, AZO, GZO or its combination.The formation method of another electrically conducting transparent sublayer 102b is chemical vapour deposition technique, sputtering method or other suitable methods for example.
When another layer electrically conducting transparent sublayer 102b filled up its each other gap 104b of nano metal individual particle or nano metal aggregate 104a, metal individual particle, metal agglomeration thing or its combination were promptly as nanometer radiation point, shown in Fig. 3 C.Therefore, when metal individual particle, metal agglomeration thing 104a radiated point as nanometer, its size was necessary for nano-scale, was about tens nanometer to hundreds of nanometers.
Please refer to Fig. 3 C-1, when formed another layer electrically conducting transparent sublayer 102b did not fill up its each other gap 104b of metal individual particle or metal agglomeration thing 104a, these gaps 104b was called nano aperture again, promptly as nanometer radiation point.Therefore, when nanometer radiation point was nano aperture, the size of metal individual particle or metal agglomeration thing 104a was also unrestricted, but the gap 104b between metal individual particle or the metal agglomeration thing 104a then must be controlled at and be about 10 nanometer to 50 nanometers.Certainly, metal individual particle, metal agglomeration thing 104a with and each other gap 104b can be simultaneously as nanometer radiation point, still, its size all is necessary for nano-scale, is about tens nanometer to hundreds of nanometers.
Afterwards, on transparency conducting layer 102, form metal level 106 again,, finish the making of back electrode module 200 with as contact electrode.The material of metal level 106 for example is aluminium, silver, molybdenum or copper etc.The formation method of metal level 106 is sputtering method or other suitable methods for example.
Fig. 4 A to 4B or 4B-1 are the generalized sections of the manufacturing process of the another kind of back electrode module that illustrates according to further embodiment of this invention.
Please refer to Fig. 4 A, on the photoelectric conversion layer 100 of solar cell, form electrically conducting transparent sublayer 102a.The material of electrically conducting transparent sublayer 102a for example is a transparent conductive oxide, such as being ITO, FTO, AZO, GZO or its combination.
Then, directly form a plurality of metal individual particles, a plurality of metal agglomeration thing or its combination 104a on the 102a of electrically conducting transparent sublayer, its gap each other is 104b.The size of metal individual particle or metal agglomeration thing can be a nano-scale or bigger.The material of metal individual particle, metal agglomeration thing or its combination 104a be refringence distance with electrically conducting transparent sublayer 102a at the material more than 0.1, for example be gold, silver, aluminium, tin, nickel, platinum, titanium, vanadium, molybdenum, tungsten, indium or its combination.The method that directly forms a plurality of metal individual particles, a plurality of metal agglomeration thing or its combination 104a on the 102a of electrically conducting transparent sublayer for example is spraying or rubbing method.
Afterwards, please refer to Fig. 4 B, form another layer electrically conducting transparent sublayer 102b on the 102a of electrically conducting transparent sublayer and around nano metal individual particle or the nano metal aggregate 104a, to constitute transparency conducting layer 102.The material of another electrically conducting transparent sublayer 102b for example is a transparent conductive oxide, such as being ITO, FTO, AZO, GZO or its combination.The formation method of another electrically conducting transparent sublayer 102b is chemical vapour deposition technique, sputtering method or other suitable methods for example.
When another layer electrically conducting transparent sublayer 102b filled up its each other gap 104b of nano metal individual particle or nano metal aggregate 104a, metal individual particle, metal agglomeration thing or its combination were promptly as nanometer radiation point, shown in Fig. 4 B.Therefore,, when forming metal individual particle, metal agglomeration thing 104a, its size must be controlled at and be nano-scale, be about tens nanometer to hundreds of nanometers when metal individual particle, metal agglomeration thing 104a during as nanometer radiation point.
Please refer to Fig. 4 B-1, when formed another layer electrically conducting transparent sublayer 102b did not fill up its each other gap 104b of metal individual particle or metal agglomeration thing 104a, these gaps 104b was called nano aperture again, promptly as nanometer radiation point.Therefore, when nanometer radiation point was nano aperture, the size of metal individual particle or metal agglomeration thing 104a was also unrestricted, but the gap 104b between metal individual particle or the metal agglomeration thing 104a then must be controlled at nano-scale, is about tens nanometer to hundreds of nanometers.
Certainly, metal individual particle, metal agglomeration thing 104a with and each other gap 104b can be simultaneously as nanometer radiation point, still, its size all is necessary for nano-scale, is about tens nanometer to hundreds of nanometers.
Afterwards, on transparency conducting layer 102, form metal level 106 again,, finish the making of back electrode module 200 with as contact electrode.The material of metal level 106 for example is aluminium, silver, molybdenum or copper etc.The formation method of metal level 106 is sputtering method or other suitable methods for example.
The present invention forms a plurality of scattering points in transparency conducting layer can increase scattering of light, improve the path that incident light and reverberation are advanced in photoelectric conversion layer, to promote the efficient of solar cell, therefore, the thickness of required photoelectric conversion layer is extremely thin, die, can reduce the cost of material of photoelectric conversion layer, shorten the process time of photoelectric conversion layer.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (20)
1. the back electrode module of a solar cell comprises:
Transparency conducting layer is positioned on the photoelectric conversion layer;
A plurality of nanometer scattering points are in this transparency conducting layer; And
The first metal layer is positioned on this transparency conducting layer.
2. the back electrode module of solar cell as claimed in claim 1, wherein the size of this nanometer scattering point is 10 nanometer to 50 nanometers.
3. the back electrode module of solar cell as claimed in claim 1, wherein this nanometer scattering point is a plurality of nano metal individual particles, a plurality of nano metal aggregate or its combination.
4. the back electrode module of solar cell as claimed in claim 1, wherein the material of this nano metal individual particle or this nano metal aggregate be with the refringence of this transparency conducting layer apart from the material more than 0.1.
5. the back electrode module of solar cell as claimed in claim 4, wherein the material of this nano metal individual particle or this nano metal aggregate comprises gold, silver, aluminium, tin, nickel, platinum, titanium, vanadium, molybdenum, tungsten, indium or its combination.
6. the back electrode module of solar cell as claimed in claim 1, wherein this nanometer scattering point be between second metal level in this transparency conducting layer, a plurality of metal individual particle, a plurality of nano apertures in a plurality of metal agglomeration thing or its combination.
7. the back electrode module of solar cell as claimed in claim 1, wherein the material of this transparency conducting layer comprises indium tin oxide, fluorine doped tin oxide, Al-Doped ZnO, gallium-doped zinc oxide or its combination.
8. the manufacture method of the back electrode module of a solar cell comprises:
Form transparency conducting layer;
In this transparency conducting layer, form a plurality of nanometer scattering points; And
On this transparency conducting layer, form the first metal layer.
9. the manufacture method of the back electrode module of solar cell as claimed in claim 8, the method that wherein forms this transparency conducting layer and this nanometer scattering point comprises:
Form the first electrically conducting transparent sublayer;
On this first electrically conducting transparent sublayer, form second metal level;
Form the second electrically conducting transparent sublayer, this first electrically conducting transparent sublayer and this second electrically conducting transparent sublayer form this transparency conducting layer; And
Carry out heating process, make the metallic atom autohemagglutination of this second metal level form this nanometer scattering point.
10. the manufacture method of the back electrode module of solar cell as claimed in claim 9, wherein this nanometer scattering point is nano metal individual particle, nano metal aggregate, nano aperture or its combination.
11. the manufacture method of the back electrode module of solar cell as claimed in claim 9, wherein the material of this second metal level is that the refringence of this transparency conducting layer is apart from the material more than 0.1.
12. the manufacture method of the back electrode module of solar cell as claimed in claim 11, wherein the material of this second metal level comprises gold, silver, aluminium, tin, nickel, platinum, titanium, vanadium, molybdenum, tungsten, indium or its combination.
13. the manufacture method of the back electrode module of solar cell as claimed in claim 9, wherein this heating process carried out before forming this second electrically conducting transparent sublayer.
14. the manufacture method of the back electrode module of solar cell as claimed in claim 9, wherein this heating process carries out after forming this second electrically conducting transparent sublayer.
15. the manufacture method of the back electrode module of solar cell as claimed in claim 9, the method that wherein forms this transparency conducting layer and this nanometer scattering point comprises:
Form the first electrically conducting transparent sublayer;
On this first electrically conducting transparent sublayer, directly form this nanometer scattering point; And
On this nanometer scattering point, form the second electrically conducting transparent sublayer.
16. the manufacture method of the back electrode module of solar cell as claimed in claim 15, the method that wherein forms this nanometer scattering point are to be directly to form on this first electrically conducting transparent sublayer a plurality of metal individual particles, a plurality of metal agglomeration thing or its combination.
17. the manufacture method of the back electrode module of solar cell as claimed in claim 16, wherein this nanometer scattering point is this metal individual particle, this nano metal aggregate or its combination, and the size that this nanometer scattering point is this metal individual particle, this nano metal aggregate is tens of to hundreds of nanometers.
18. the manufacture method of the back electrode module of the described solar cell of claim 17, wherein the material of this nano metal individual particle or this nano metal aggregate be with the refringence of this transparency conducting layer apart from the material more than 0.1.
19. the manufacture method of the back electrode module of the described solar cell of claim 18, wherein the material of this nano metal individual particle or this nano metal aggregate comprises silver, platinum, palladium, molybdenum or its combination.
20. the manufacture method of the back electrode module of solar cell as claimed in claim 16, wherein this nanometer scattering point is a plurality of nano apertures, and this nano aperture is not by the gap of this second electrically conducting transparent sublayer covering between the gap that do not covered by this second electrically conducting transparent sublayer between the gap that do not covered by this second electrically conducting transparent sublayer between this metal individual particle, this metal agglomeration thing or this metal individual particle and this metal agglomeration thing, or be aforesaid combination, and the size in this gap is tens of to hundreds of nanometers.
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| CN 200810004005 CN101488532A (en) | 2008-01-16 | 2008-01-16 | Back electrode module of solar cell |
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| CN 200810004005 CN101488532A (en) | 2008-01-16 | 2008-01-16 | Back electrode module of solar cell |
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| CN101488532A true CN101488532A (en) | 2009-07-22 |
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| CN 200810004005 Pending CN101488532A (en) | 2008-01-16 | 2008-01-16 | Back electrode module of solar cell |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610665A (en) * | 2011-12-22 | 2012-07-25 | 中国科学院半导体研究所 | Silicon nanoporous array structured concentrator solar cell and preparation method thereof |
| CN103022225A (en) * | 2011-09-22 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Method for manufacturing island-shaped growth structure back electrode |
| CN103094368A (en) * | 2011-11-03 | 2013-05-08 | 三星Sdi株式会社 | Solar cell |
| CN103811589A (en) * | 2014-02-17 | 2014-05-21 | 中国科学院半导体研究所 | Manufacturing method of light trapping structures on front and back faces of semiconductor film solar cell |
| CN106816482A (en) * | 2015-12-02 | 2017-06-09 | 神华集团有限责任公司 | Preceding electrode for thin-film solar cells and preparation method thereof and thin-film solar cells |
| CN116487447A (en) * | 2023-06-21 | 2023-07-25 | 天合光能股份有限公司 | Heterojunction solar cell and preparation method thereof |
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2008
- 2008-01-16 CN CN 200810004005 patent/CN101488532A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022225A (en) * | 2011-09-22 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Method for manufacturing island-shaped growth structure back electrode |
| CN103094368A (en) * | 2011-11-03 | 2013-05-08 | 三星Sdi株式会社 | Solar cell |
| CN102610665A (en) * | 2011-12-22 | 2012-07-25 | 中国科学院半导体研究所 | Silicon nanoporous array structured concentrator solar cell and preparation method thereof |
| CN102610665B (en) * | 2011-12-22 | 2014-04-09 | 中国科学院半导体研究所 | Silicon nanoporous array structured concentrator solar cell and preparation method thereof |
| CN103811589A (en) * | 2014-02-17 | 2014-05-21 | 中国科学院半导体研究所 | Manufacturing method of light trapping structures on front and back faces of semiconductor film solar cell |
| CN106816482A (en) * | 2015-12-02 | 2017-06-09 | 神华集团有限责任公司 | Preceding electrode for thin-film solar cells and preparation method thereof and thin-film solar cells |
| CN106816482B (en) * | 2015-12-02 | 2018-11-13 | 神华（北京）光伏科技研发有限公司 | Preceding electrode for thin-film solar cells and preparation method thereof and thin-film solar cells |
| CN116487447A (en) * | 2023-06-21 | 2023-07-25 | 天合光能股份有限公司 | Heterojunction solar cell and preparation method thereof |
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