CN102610665B - Silicon nanoporous array structured concentrator solar cell and preparation method thereof - Google Patents

Silicon nanoporous array structured concentrator solar cell and preparation method thereof Download PDF

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Publication number
CN102610665B
CN102610665B CN201110435947.1A CN201110435947A CN102610665B CN 102610665 B CN102610665 B CN 102610665B CN 201110435947 A CN201110435947 A CN 201110435947A CN 102610665 B CN102610665 B CN 102610665B
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hole array
silicon nano
nano hole
contact layer
silicon
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CN102610665A (en
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韩伟华
陈艳坤
李小明
杨富华
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Institute of Semiconductors of CAS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a silicon nanoporous array structured concentrator solar cell which comprises an Al/Si alloy back electrode, a p + back contact layer, a p-type crystalline silicon layer, an n + contact layer, a SiO2 passivation layer and a front electrode, wherein the p + back contact layer is arranged on the Al/Si alloy back electrode; the p-type crystalline silicon layer is arranged on the p + back contact layer; the n + contact layer is arranged on the p-type crystalline silicon layer, and is provided with a silicon nanoporous array; the SiO2 passivation layer is arranged on the surface of the n + contact layer provided with the silicon nanoporous array; and the front electrode is formed on the n + contact layer in a horizontal-vertical cross mode.

Description

Optically focused silicon nano hole array structure solar battery and preparation method thereof
Technical field
The present invention relates to a kind of solar cell and preparation method thereof, particularly about a kind of high-performance optically focused silicon nano hole array structure solar battery and preparation method thereof.
Background technology
In solar cell, by semiconductor pn knot, carry out photovoltaic energy conversion and have two necessary steps.First, battery absorbs light, produces electron-hole pair; Then, by device architecture by electronics and hole separately, electron stream to negative pole and hole flow to anodal, thereby produce photovoltaic voltage and current.In order to increase light absorption, a kind of method is that most solar cells rely on anti-reflective film to reduce the light reflection from battery front surface; Another kind method is to adopt pyramid texture and be combined with the back side of optical reflection performance at battery upper surface, and the light transmission route that enters battery is lengthened, and forms and falls into light, improves open circuit voltage.
The making that develops into high-efficiency silicon solar cell of nanoscale science and technology provides new opportunity.Silicon nanostructure material has remarkable excellence in the photovoltaic performance of crystal silicon material.At present people to pay close attention to maximum be the solar cell that utilizes hydrogenation nanocrystal silicon (nc-Si:H) film to make.The nanostructure of silicon crystal grain has significant quantum limitation effect, contributes to the increase of optical absorption spectra scope.Hydrogenation nanocrystal silicon material also has larger specific area, therefore has the larger absorption coefficient of light and good absorption characteristic.The pn knot of the solar cell of silicon nanowire structure is grown in nano wire radially, and transporting of photo-generated carrier is separated with light absorption direction, has longer minority carrier life time and transmission length.Meanwhile, the silicon atom in silicon nanowires has directed ordering growth, can improve its crystalline quality, compares and has larger specific area with silicon nano thin-film, has good absorbing properties.But silicon nanowires mechanical stability is not ideal enough, be easy to cave in, simultaneously larger resistance and excessive surface recombination loss a large amount of photo-generated carriers.However, the solar cell of nanostructure still has higher battery efficiency than crystal silicon itself.
Silicon nano hole array structure battery has the potentiality of substituted for silicon nano thread structure battery.This structure is taken into account the mechanical stability of crystal silicon and the sunken optical absorption characteristics of silicon nanostructure, and the nano-pore array structure simultaneously with polygon symmetric arrays has good optically focused effect, therefore will have better battery efficiency and performance.
Summary of the invention
Main purpose of the present invention is to provide a kind of high-performance optically focused silicon nano hole array structure solar battery and preparation method thereof.Under the prerequisite with existing solar cell preparation technology compatibility, the silicon nano hole array structure that proposes innovation has concentration structure, with it, improves the transformation efficiency of solar cell.
The invention provides a kind of optically focused silicon nano hole array structure solar battery, comprising:
One Al/Si alloy back electrode;
One p +back contact, be positioned at Al/Si alloy back electrode above;
One p-type crystal silicon material layer, is positioned at p +above back contact;
One n +contact layer, be positioned at p-type crystal silicon material layer above, this n +above contact layer, have silicon nano hole array;
One SiO 2passivation layer, is positioned at the n that has silicon nano hole array +the surface of contact layer;
One front electrode, intersects to form anyhow in n +on contact layer.
The present invention also provides a kind of preparation method of optically focused silicon nano hole array structure solar battery, comprises the steps:
Step 1: form and prepare one deck n at p-type crystal silicon material layer upper surface +contact layer, forms pn +junction structure;
Step 2: form p at p-type crystal silicon material layer lower surface +back contact;
Step 3: at n +on contact layer upper surface, make the photoetching offset plate figure of silicon nano hole array by lithography;
Step 4: Ag is metal filled in the photoetching offset plate figure of silicon nano hole array, and the method for corroding by induction, forms silicon nano hole array;
Step 5: be positioned at the n that has silicon nano hole array +the surface of contact layer, deposit SiO 2passivation layer;
Step 6: at p +back contact lower surface is made Al/Si alloy back electrode;
Step 7: peel off by photoetching, corrosion and evaporation of metal, at n +electrode before making on contact layer.
The invention has the beneficial effects as follows:
1, the nano-pore array structure solar cell of the present invention's design is taken into account the mechanical stability of crystal silicon and the sunken optical absorption characteristics of silicon nanostructure, the nano-pore array structure simultaneously with polygon symmetric arrays has good optically focused effect, therefore will have better battery efficiency and performance.
The wet corrosion technique of the metal catalytic induction that 2, the present invention adopts is prepared silicon nano hole array, and step is simple, is easy to large area and prepares regular nanohole array, and little to silicon materials damage, cost of manufacture is low, and step is simple, and efficiency is high.
In sum, this method of preparing silicon-based nanometer column array provided by the invention, compares with traditional preparation method, has above-mentioned obvious beneficial effect.Above-mentioned many advantages and practical value, have large improvement technically, and produced handy and practical effect, thereby be more suitable for practicality.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and be described in detail as follows with reference to accompanying drawing, wherein:
Fig. 1 is the structural representation of optically focused silicon-based nanopore array structure solar battery;
Fig. 2 is the flow chart of preparing optically focused silicon-based nanopore array structure solar battery provided by the invention;
Fig. 3 is optically focused silicon-based nanopore array structure schematic diagram;
Embodiment
Refer to shown in Fig. 1, the invention provides a kind of optically focused silicon nano hole array structure solar battery, comprising:
One Al/Si alloy back electrode 101;
One p +back contact 102, be positioned at Al/Si alloy back electrode 101 above;
One p-type crystal silicon material layer 103, is positioned at p +above back contact 102;
One n +contact layer 104, be positioned at p-type crystal silicon material layer 103 above, this n +above contact layer 104, have silicon nano hole array 105, n is run through in the hole of this silicon nano hole array 105 +contact layer 104, this n +the thickness of contact layer 104 is 100-1000nm, and the hole of this silicon nano hole array 105 is pressed the symmetrical dot matrix structural cycle of polygon and arranged, and the aperture in silicon nano hole array 105 holes is 100nm-800nm, and periodicity is 3-5 aperture doubly;
One SiO 2passivation layer 106, is positioned at the n that has silicon nano hole array 105 +the surface of contact layer 104;
One front electrode 107, intersects to form anyhow in n +on contact layer 104, the material of this front electrode 107 is Ti/Pd/Ag multiple layer metal finger electrode, ito transparent electrode or graphene transparent electrode.
Refer to Fig. 2 also in conjunction with consulting Fig. 1 and Fig. 3, the present invention also provides a kind of preparation method of optically focused silicon nano hole array structure solar battery, comprises the steps:
Step 201: form and prepare one deck n at p-type crystal silicon material layer 103 upper surface +contact layer 104, forms pn +junction structure, described pn +junction structure adopts ion implantation or diffusion method to form;
Step 202: form p at p-type crystal silicon material layer 103 lower surface +back contact 102;
Step 203: at n +on contact layer 104 upper surfaces, make the photoetching offset plate figure of silicon nano hole array 105 by lithography, the hole of this silicon nano hole array 105 is pressed the symmetrical dot matrix structural cycle of polygon and is arranged, hexagon 301 as shown in Figure 3, octagon 302 or decagon 303 etc., the aperture in silicon nano hole array 105 holes is 100nm-800nm, periodicity is 3-5 aperture doubly, and the cycle hole system of battle formations shape of this silicon nano hole array 105 adopts nanometer embossing, DUV photoetching, femtosecond laser mask-free photolithography or electron beam lithography to make and forms;
Step 204: Ag is metal filled in the photoetching offset plate figure of silicon nano hole array 105, and the method for corroding by induction forms silicon nano hole array 105, and n is run through in the hole of this silicon nano hole array 105 +contact layer 104, this n +the thickness of contact layer 104 is 100-1000nm, and described Ag metal lattice induction corrosion silicon materials process is as follows: (a) adopt HF: AgNO 3mixed liquor deposits the uniform Ag particle of one deck in concentration structure cycle hole system of battle formations shape; (b) use again HF: H 2o 2mixed liquor anisotropic etching under the induction of Ag goes out hole, and deionized water stops etching; (c) then use HNO 3: H 2o removes Ag particle, deionized water rinsing;
Step 205: be positioned at the n that has silicon nano hole array 105 +the surface of contact layer 104, deposit SiO 2passivation layer 106;
Step 206: at p +back contact 102 lower surfaces are made Al/Si alloy back electrode 101, and alloy temperature is 450 ℃;
Step 207: peel off by photoetching, corrosion and evaporation of metal, at n +electrode 107 before making on contact layer 104, the material of this front electrode 107 is Ti/Pd/Ag multiple layer metal finger electrode, ito transparent electrode or graphene transparent electrode, this electrode is by annealing and n +contact layer 104 forms ohmic contact.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (6)

1. a preparation method for optically focused silicon nano hole array structure solar battery, comprises the steps:
Step 1: prepare one deck n at p-type crystal silicon material layer upper surface +contact layer, forms pn +junction structure;
Step 2: form p at p-type crystal silicon material layer lower surface +back contact;
Step 3: at n +on contact layer upper surface, make the photoetching offset plate figure of silicon nano hole array by lithography;
Step 4: Ag is metal filled in the photoetching offset plate figure of silicon nano hole array, and the method for corroding by induction, forms silicon nano hole array;
Step 5: be positioned at the n that has silicon nano hole array +the surface of contact layer, deposit SiO 2passivation layer;
Step 6: at p +back contact lower surface is made Al/Si alloy back electrode;
Step 7: peel off by photoetching, corrosion and evaporation of metal, at n +electrode before making on contact layer.
2. the preparation method of optically focused silicon nano hole array structure solar battery according to claim 1, wherein pn +junction structure adopts ion implantation or diffusion method to form.
3. the preparation method of optically focused silicon nano hole array structure solar battery according to claim 1, wherein n is run through in the hole of silicon nano hole array +contact layer, this n +the thickness of contact layer is 100-1000nm.
4. the preparation method of optically focused silicon nano hole array structure solar battery according to claim 1, the hole of silicon nano hole array wherein, press the symmetrical dot matrix structural cycle of polygon and arrange, the aperture of silicon nano hole array hole is 100nm-800nm, and periodicity is 3-5 aperture doubly.
5. the preparation method of optically focused silicon nano hole array structure solar battery according to claim 4, wherein cycle hole system of battle formations shape employing nanometer embossing, DUV photoetching, femtosecond laser mask-free photolithography or the electron beam lithography making formation of silicon nano hole array.
6. the preparation method of optically focused silicon nano hole array structure solar battery according to claim 1, wherein before the material of electrode be Ti/Pd/Ag multiple layer metal finger electrode, ito transparent electrode or graphene transparent electrode.
CN201110435947.1A 2011-12-22 2011-12-22 Silicon nanoporous array structured concentrator solar cell and preparation method thereof Expired - Fee Related CN102610665B (en)

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CN103219411A (en) * 2013-04-09 2013-07-24 中国科学院半导体研究所 Solar battery with composite light-trapping structure of nanopores and metal particles and preparation method
CN103390657B (en) * 2013-07-22 2016-03-30 中国科学院高能物理研究所 Photronic selectivity grid of a kind of silicon nano column array and preparation method thereof
CN105206705A (en) * 2015-08-18 2015-12-30 广东爱康太阳能科技有限公司 Low reflectivity solar crystalline silicon cell and manufacturing method thereof
CN106129185A (en) * 2016-08-24 2016-11-16 常州天合光能有限公司 Laser ablation electrically conducting transparent film preparation phasmon strengthens crystal silicon solar battery method

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CN101488532A (en) * 2008-01-16 2009-07-22 财团法人工业技术研究院 Back electrode module of solar cell
CN101990713A (en) * 2008-02-03 2011-03-23 尼坦能源公司 Thin-film photovoltaic devices and related manufacturing methods
CN102097497A (en) * 2010-12-27 2011-06-15 重庆大学 Solar cell with high conversion efficiency

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Publication number Priority date Publication date Assignee Title
CN101488532A (en) * 2008-01-16 2009-07-22 财团法人工业技术研究院 Back electrode module of solar cell
CN101990713A (en) * 2008-02-03 2011-03-23 尼坦能源公司 Thin-film photovoltaic devices and related manufacturing methods
CN102097497A (en) * 2010-12-27 2011-06-15 重庆大学 Solar cell with high conversion efficiency

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