CN116487447A - Heterojunction solar cell and preparation method thereof - Google Patents

Heterojunction solar cell and preparation method thereof Download PDF

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Publication number
CN116487447A
CN116487447A CN202310736755.7A CN202310736755A CN116487447A CN 116487447 A CN116487447 A CN 116487447A CN 202310736755 A CN202310736755 A CN 202310736755A CN 116487447 A CN116487447 A CN 116487447A
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transparent conductive
heterojunction
conductive layer
layer
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李宏伟
孟子博
霍亭亭
侯承利
杨广涛
陈达明
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Trina Solar Co Ltd
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Trina Solar Co Ltd
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
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Abstract

The embodiment of the disclosure provides a heterojunction solar cell and a preparation method thereof, in the heterojunction solar cell, a metal nanowire is embedded in a transparent conductive layer, compared with the transparent conductive layer, the metal nanowire has better conductivity, and the metal nanowire is embedded with the transparent conductive layer to realize full contact, so that the lap joint impedance between the metal nanowire and the transparent conductive layer can be reduced, the conductivity of the transparent conductive layer is improved, and the photoelectric conversion efficiency of the heterojunction solar cell is further improved.

Description

Heterojunction solar cell and preparation method thereof
Technical Field
The disclosure relates to the technical field of solar cells, in particular to a heterojunction solar cell and a preparation method thereof.
Background
Heterojunction (Heterojunction with intrinsic Thin layer, HJT) solar cells are currently receiving more and more attention in the industry, the heterojunction cell structure is usually centered on a silicon substrate, and a layer of intrinsic amorphous silicon film is deposited between doped amorphous silicon on two sides of the silicon substrate and the silicon substrate.
The heterojunction solar cell structure is suitable for thin-sheet production, and how to improve the photoelectric conversion efficiency of the heterojunction solar cell is a hot spot of research in the industry.
Disclosure of Invention
In view of the above drawbacks of the related art, an object of the present disclosure is to provide a heterojunction solar cell and a method for manufacturing the same, so as to solve the technical problem of low photoelectric conversion efficiency of the heterojunction solar cell in the related art.
A first aspect of the present disclosure provides a heterojunction solar cell, comprising:
a heterojunction unit;
transparent conductive layers on the front and back of the heterojunction unit;
the grid line electrode is positioned at one side of the transparent conductive layer, which is away from the heterojunction unit, and is electrically connected with the transparent conductive layer;
a tunneling transport layer disposed between the transparent conductive layer and the heterojunction cell;
wherein, the transparent conducting layer on at least one side of the heterojunction unit is embedded with metal nanowires, and the transparent conducting layer embedded with the metal nanowires wraps the metal nanowires.
Optionally, the transparent conductive layer embedded with the metal nanowire includes: the first sub-transparent conductive layer, the second sub-transparent conductive layer positioned between the first sub-transparent conductive layer and the heterojunction unit, and the metal nanowire positioned between the first sub-transparent conductive layer and the second sub-transparent conductive layer, wherein the metal nanowire is wrapped between the first sub-transparent conductive layer and the second sub-transparent conductive layer.
Optionally, the metal nanowire penetrates out of the first sub-transparent conductive layer along a direction away from the second sub-transparent conductive layer, and the gate line electrode is in contact electrical connection with the first sub-transparent conductive layer and the metal nanowire.
Optionally, the thickness of the first sub-transparent conductive layer ranges from 10 to 40nm.
Optionally, the tunneling transport layer is one layer or a lamination of at least two layers of tunneling silicon oxide, nanocrystalline silicon oxide film, aluminum oxide or titanium oxide.
Optionally, the thickness of the tunneling transport layer is in the range of 0.5-2nm.
Optionally, the heterojunction solar cell further comprises:
the anti-reflection layer is arranged on one side of the transparent conducting layer, which is away from the heterojunction unit, and is penetrated out by the grid line electrode.
Optionally, the anti-reflection layer is one or a lamination of at least two layers of transparent conductive oxide film, silicon nitride, silicon oxide and magnesium fluoride, and the transparent conductive oxide film has higher light transmittance than the transparent conductive layer.
Optionally, the heterojunction cell comprises:
a silicon substrate;
the first intrinsic amorphous silicon layer is arranged between the first doped amorphous silicon layer and the front surface of the silicon substrate, and the doping types of the silicon substrate and the first doped amorphous silicon layer are the same;
the second doped amorphous silicon layer and the second intrinsic amorphous silicon layer are arranged between the back surface of the silicon substrate and the second doped amorphous silicon layer, and the doping types of the silicon substrate and the second doped amorphous silicon layer are opposite.
A second aspect of the present disclosure provides a method of fabricating a heterojunction solar cell, comprising:
forming a heterojunction unit;
depositing tunneling transmission layers on the front and back sides of the heterojunction;
transparent conductive layers are formed on the front surface and the back surface of the heterojunction unit, the transparent conductive layers are formed on one side, away from the heterojunction unit, of the tunneling transmission layer, metal nanowires are embedded in at least one transparent conductive layer, and the transparent conductive layers embedded with the metal nanowires wrap the metal nanowires;
and forming a grid line electrode on one side of each transparent conductive layer, which is away from the heterojunction unit, wherein the grid line electrode is connected with the transparent conductive layer.
Optionally, forming transparent conductive layers on the front and back sides of the heterojunction unit, including:
forming a metal nanowire on at least one of the front surface and the back surface of the heterojunction unit;
and sputtering a first sub-transparent conductive layer on one side of the metal nanowire, which is away from the heterojunction unit, wherein the first sub-transparent conductive layer covers the metal nanowire.
Optionally, a transparent conductive layer is formed on the front surface and the back surface of the heterojunction unit, and the method further includes:
and before forming the metal nanowire on at least one of the front surface and the back surface of the heterojunction unit, depositing a second sub-transparent conductive layer on at least one of the front surface and the back surface of the heterojunction unit, wherein the metal nanowire is formed between the first sub-transparent conductive layer and the second sub-transparent conductive layer.
As described above, in the heterojunction solar cell and the method for manufacturing the same provided in the embodiments of the present disclosure, by embedding the metal nanowire in the corresponding transparent conductive layer, compared with the transparent conductive layer, the metal nanowire has better conductivity, and by embedding the metal nanowire in the transparent conductive layer to achieve sufficient contact, the overlap impedance with the transparent conductive layer can be reduced, the conductivity of the transparent conductive layer is improved, and the photoelectric conversion efficiency of the heterojunction solar cell is further improved.
Drawings
Fig. 1 is a cross-sectional view of a heterojunction solar cell provided in an embodiment of the disclosure;
fig. 2 is a cross-sectional view of a heterojunction solar cell provided in another embodiment of the disclosure;
fig. 3 is a cross-sectional view of a heterojunction solar cell provided in accordance with yet another embodiment of the present disclosure;
fig. 4 shows a flow chart of a method of fabricating a heterojunction solar cell in accordance with an embodiment of the disclosure;
FIGS. 5-7 show block diagrams of heterojunction solar cells of embodiments of the present disclosure at various stages of a fabrication process;
figures 8-12 show block diagrams of heterojunction solar cells of yet another embodiment of the present disclosure at various stages of the fabrication process;
fig. 13-15 show block diagrams of heterojunction solar cells of yet another embodiment of the present disclosure at various stages of the fabrication process.
Detailed Description
Other advantages and effects of the present disclosure will be readily apparent to those skilled in the art from the following description of the embodiments of the disclosure by means of specific examples. The disclosure may be practiced or carried out in other embodiments or applications, and details of the disclosure may be modified or changed from various points of view and applications without departing from the spirit of the disclosure. It should be noted that, without conflict, the embodiments of the present disclosure and features of the embodiments may be combined with each other.
The embodiments of the present disclosure will be described in detail below with reference to the attached drawings so that those skilled in the art to which the present disclosure pertains can easily implement the same. The present disclosure may be embodied in many different forms and is not limited to the embodiments described herein.
In the description of the present disclosure, references to the terms "one embodiment," "some embodiments," "examples," "particular examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples, as well as features of various embodiments or examples, presented in this disclosure may be combined and combined by those skilled in the art without contradiction.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the representations of the present disclosure, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Although not differently defined, including technical and scientific terms used herein, all terms have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The term append defined in commonly used dictionaries is interpreted as having a meaning that is consistent with the meaning of the relevant technical literature and the currently prompted message, and is not excessively interpreted as an ideal or very formulaic meaning, so long as no definition is made.
Fig. 1 shows a cross-sectional view of a heterojunction solar cell provided by an embodiment of the disclosure, as shown in fig. 1, the heterojunction solar cell includes:
a heterojunction cell 1;
transparent conductive layers on the front and back sides of the heterojunction cell 1, namely a first transparent conductive layer 21 on the front side and a second transparent conductive layer 22 on the back side;
a gate line electrode positioned on one side of the transparent conductive layer away from the heterojunction unit 1, the gate line electrode being electrically connected with the transparent conductive layer, wherein the first transparent conductive layer 21 is electrically connected with the first gate line electrode 31 on the same side, and the second transparent conductive layer 22 is electrically connected with the second gate line electrode 32 on the same side;
the metal nanowires 4 are embedded in the transparent conductive layers on both sides of the heterojunction unit 1, such as the first transparent conductive layer 21 and the second transparent conductive layer 22.
In the disclosed embodiment, the metal nanowires 4 are embedded in the respective transparent conductive layers. Compared with the transparent conductive layer, the metal nanowire has better conductivity, can reduce the lap joint impedance between the metal nanowire and the transparent conductive layer by being embedded with the transparent conductive layer so as to realize full contact, and improves the conductivity of the transparent conductive layer, thereby improving the photoelectric conversion efficiency of the heterojunction solar cell.
Taking the first transparent conductive layer 21 as an example, in the embodiment of the present disclosure, the first transparent conductive layer 21 embedded with the metal nanowire 4 encapsulates the metal nanowire 4, so that the embedding between the two is achieved by way of encapsulation. The metal nanowire has better adhesive force and is more stable under the coating of the outer transparent conductive layer.
In further embodiments of the present disclosure, the transparent conductive layer embedded with the metal nanowire may include: the heterojunction structure comprises a first sub-transparent conductive layer, a second sub-transparent conductive layer positioned between the heterojunction unit and the first sub-transparent conductive layer, and a metal nanowire positioned between the first sub-transparent conductive layer and the second sub-transparent conductive layer, wherein the package of the metal nanowire by the transparent conductive layer is realized. The contact area of the metal nanowire and the transparent conducting layer can be obviously increased, the lap joint impedance is reduced, meanwhile, the second sub-transparent conducting layer can protect the effect of the metal nanowire to a certain extent, and the stability of the metal nanowire in the subsequent preparation process is improved.
In the embodiment of the present disclosure, the thickness of the first transparent conductive layer 21 ranges from 10 to 40nm.
In the embodiment of the disclosure, the metal nanowire penetrates out of the first sub-transparent conductive layer along the direction away from the second sub-transparent conductive layer, and the corresponding gate line electrode is in contact electrical connection with the first sub-transparent conductive layer and the metal nanowire. Thus, the overlap resistance of the gate line electrode and the transparent conductive layer is smaller.
In the embodiment of the present disclosure, the structure between the second transparent conductive layer 22 and the corresponding metal nanowire 4 may refer to the content of the first transparent conductive layer 21 above, which is not limited herein.
In the embodiment of the present disclosure, the first transparent conductive layer 21 and the second transparent conductive layer 22 may be transparent conductive oxide (Transparent Conductive Oxide, abbreviated as TCO) films, wherein the TCO may be one or a composite layer of at least two of tin doped indium oxide (ITO), tungsten doped indium oxide (IWO), cesium doped indium oxide (ICO), and aluminum doped zinc oxide (AZO). From the physical property, the TCO film is a semiconductor photoelectric material, and the number of carriers can be increased by means of doping and the like, so that the system has degeneracy, and has excellent photoelectric characteristics of forbidden bandwidth, low resistivity, high light transmittance in a visible light region, high light reflectance in an infrared spectrum region and the like.
In this embodiment, the metal nanowires 4 are embedded in both the first transparent conductive layer 21 and the second transparent conductive layer 22. In other embodiments, the metal nanowire is embedded in at least one of the first transparent conductive layer and the second transparent conductive layer.
As shown in fig. 1, a heterojunction cell 1 in an embodiment of the present disclosure includes:
a silicon substrate 11;
a first doped amorphous silicon layer 12, and a first intrinsic amorphous silicon layer 13 disposed between the first doped amorphous silicon layer 12 and the front surface of the silicon substrate 11, the silicon substrate 11 being the same type of doping as the first doped amorphous silicon layer 12;
a second doped amorphous silicon layer 14, and a second intrinsic amorphous silicon layer 15 disposed between the back surface of the silicon substrate 11 and the second doped amorphous silicon layer 14, the silicon substrate 11 being of opposite doping type to the second doped amorphous silicon layer 15.
In a heterojunction structure, the heterojunction is formed by two different semiconductor materials. The silicon substrate 11 is selected to have N-type doped single crystal silicon c-Si, a first intrinsic amorphous silicon (i-a-Si, intrinsic amorphous Silicon) layer 13 and an N-type first doped amorphous silicon (N-a-Si, N-type amorphous Silicon) layer 12 formed in sequence on the front surface thereof, and a second intrinsic amorphous silicon layer 15 and a P-type second doped amorphous silicon (P-a-Si, N-type amorphous Silicon) layer 14 formed in sequence on the back surface of the silicon substrate 11 to form a back surface field to form a P-N junction for current transmission. The surface defects are passivated by the first and second intrinsic amorphous silicon layers 13 and 15, thereby generating a higher operating voltage.
Further, amorphous silicon on the front surface of the silicon substrate 11 can be hydrogenated, the transparency of the light incident window of a-Si: H is higher, the band gap is larger, the open circuit voltage is higher, and the hydrogen atoms can play a passivation role on the silicon substrate 11, so that higher conversion efficiency is obtained.
In another embodiment of the present disclosure, as shown in fig. 2, the heterojunction solar cell is different from fig. 1 in that it further comprises:
a first tunneling transport layer 17 disposed between the first transparent conductive layer 16 and the heterojunction cell 10;
a second tunneling transport layer 19 disposed between the second transparent conductive layer 18 and the heterojunction cell 10.
In this embodiment, the tunneling transport layer can reduce the contact resistance of the transparent conductive layer and the metal nanowire with the heterojunction cell 10, eliminate the schottky barrier at the interface contact position, realize ohmic contact, reduce the series resistance (Rs), improve the fill factor (english: fill factor, abbreviated as FF), and improve the short-circuit current (ISC).
In the embodiment of the present disclosure, the first tunneling transport layer 17 and the second tunneling transport layer 19 may be tunneling silicon oxide, nanocrystalline silicon oxide (nc-SiO) x ) One or a stack of at least two layers of film, aluminum oxide or titanium oxide. The nanocrystalline silicon oxide film material has the characteristics of high conductivity, photoluminescence and the like, and can be applied to solar cells for absorbing light of different wave bands by changing the grain size and the crystallization rate to adjust the band gap.
In this embodiment, the heterojunction solar cell is provided with tunneling transport layers on both the front and back sides. In a corresponding embodiment, a tunneling transport layer is disposed between the at least one transparent conductive layer and the heterojunction cell.
In the disclosed embodiment, the thickness of the first tunneling layer 17 and the second tunneling layer 19 is in the range of 0.5-2nm. The first tunneling transport layer 17 and the second tunneling transport layer 19 are used to make better ohmic contact between the transparent conductive layer and the heterojunction unit, the thickness is too thick to affect the tunneling efficiency, the series resistance is increased, and the thickness is too thin to affect the passivation performance, uniformity and quality of the film formation of the tunneling transport layer. Therefore, by setting the appropriate thickness range, the embodiment can obtain good tunneling efficiency, so as to reduce series resistance and improve film forming passivation performance, uniformity and quality of the tunneling transmission layer.
In the embodiment of the present disclosure, compared to fig. 1, the heterojunction solar cell shown in fig. 3 may further include:
the first anti-reflection layer 20 is disposed on a side of the first transparent conductive layer 23 facing away from the heterojunction unit 24 and is penetrated by the first gate electrode 25. As shown in fig. 3, the first gate line electrode 25 is higher than the first anti-reflection layer 20.
In the embodiment of the disclosure, the first anti-reflection layer 20 has a higher anti-reflection effect compared to the first transparent conductive layer 23, and increases high light transmittance to improve the photoelectric conversion efficiency of the heterojunction solar cell.
The first transparent conductive layer 23 has conductivity and anti-reflection effect, and the present embodiment compensates the effect of insufficient anti-reflection of the first transparent conductive layer 23 by adding the first anti-reflection layer 20, so that the first transparent conductive layer 23 has better conductivity. In this case, the first anti-reflection layer 20 may reduce the thickness of the first transparent conductive layer 23.
In the embodiment of the present disclosure, the first anti-reflection layer 20 is one or a laminate of at least two layers of a transparent conductive oxide film, silicon nitride, silicon oxide, magnesium fluoride, and the transparent conductive oxide film has higher light transmittance than the transparent conductive layer.
Thus, if the TCO is high in transmittance, the carrier concentration is lower, the absorption of light is smaller, and the light transmittance is higher.
In the disclosed embodiment, the thickness of the first anti-reflection layer 20 ranges from 40-200nm. The first anti-reflection layer 20 can be adjusted according to the refractive index and thickness of the transparent conductive layer, so as to reduce reflection of incident light and maximize absorption of light by the substrate.
The present embodiment shows that the first anti-reflection layer 20 is formed on the front surface of the heterojunction cell 24. In the corresponding embodiment, a second anti-reflection layer may be formed on the back surface of the heterojunction cell 24. Thus, an anti-reflection layer may be provided on the side of the at least one transparent conductive layer facing away from the heterojunction cell.
Fig. 4 shows a flowchart of a method for preparing a heterojunction solar cell according to an embodiment of the disclosure, and as shown in fig. 4, the method for preparing a heterojunction solar cell includes the following steps:
step 410: forming a heterojunction unit;
step 420: forming transparent conductive layers on the front and back sides of the heterojunction unit, wherein at least one transparent conductive layer is embedded with metal nanowires;
step 430: and forming a grid line electrode on one side of each transparent conductive layer, which is away from the heterojunction unit, wherein the grid line electrode is connected with the transparent conductive layer.
In the embodiment of the disclosure, by embedding the metal nanowire in the corresponding transparent conductive layer, compared with the transparent conductive layer, the metal nanowire has better conductivity, and by embedding the metal nanowire with the transparent conductive layer to realize full contact, the overlap joint impedance between the metal nanowire and the transparent conductive layer can be reduced, the conductivity of the transparent conductive layer is improved, and the photoelectric conversion efficiency of the heterojunction solar cell is further improved.
The preparation method of the heterojunction solar cell is described below in connection with a specific structural schematic diagram.
As shown in fig. 5, the heterojunction cell 50 may be formed by the following steps:
providing a silicon substrate 51, which silicon substrate 51 may be single crystal silicon c-Si with n-type doping;
a first intrinsic amorphous silicon layer 52 and a first doped amorphous silicon layer 53 are sequentially deposited on the front surface of the silicon substrate 51, and the first intrinsic amorphous silicon layer 52 may be i-a-Si: the H, first doped amorphous silicon layer 53 may be n-type n-a-Si: h is formed;
a second intrinsic amorphous silicon layer 54 and a second doped amorphous silicon layer 55 are sequentially deposited on the back surface of the silicon substrate 51, the second intrinsic amorphous silicon layer 54 and the second doped amorphous silicon layer 55 form a back-off field to form a PN junction for current transmission with the silicon substrate 51, and the second intrinsic amorphous silicon layer 54 may be i-a-Si: the H, second doped amorphous silicon layer 55 may be p-type p-a-Si: H.
in other embodiments, if the silicon substrate is p-doped, the first doped amorphous silicon layer is provided as p-doped and the second doped amorphous silicon layer is provided as n-doped.
In the presently disclosed embodiment, as shown in fig. 6, metal nanowires 56 are formed on both the front and back sides of the heterojunction cell 50;
the first sub-transparent conductive layers 57 are sputtered on the sides of the front and back metal nanowires 56 facing away from the heterojunction unit 50 such that the metal nanowires 56 are embedded in the corresponding first sub-transparent conductive layers 57, and the first sub-transparent conductive layers 57 cover the metal nanowires 56.
Thus, the first sub-transparent conductive layer 57 forms a final transparent conductive layer on the side where the metal nanowire 56 is formed.
Alternatively, the metal nanowire 56 may penetrate out of the first sub-transparent conductive layer 57 in a direction away from the heterojunction cell 50, such that a subsequent gate electrode forms a contact electrical connection with the first sub-transparent conductive layer 57 and the metal sodium nanowire 56 at the same time.
In embodiments of the present disclosure, the metal nanowires 56 may be formed specifically as follows:
coating the dispersion liquid of the metal nanowires by adopting the modes of spin coating, roller coating, spray coating, coating or dip coating;
the dispersion is baked to solidify to obtain the metal nanowires 56.
In the embodiment of the present disclosure, the metal nanowire 56 may be a silver nanowire, a copper nanowire, an aluminum nanowire, or the like, which is not limited herein.
In the disclosed embodiment, the first sub-transparent conductive layer 57 may be sputtered using physical vapor deposition (English: physical Vapor Deposition, PVD).
The present embodiment forms the first sub-transparent conductive layer 57 in which the metal nanowires 56 are embedded on both the front and back sides of the heterojunction cell 50. In another embodiment, the first sub-transparent conductive layer in which the metal nanowire is embedded may be formed only on one side, and the conventional transparent conductive layer may be formed on the other side.
Thus, in the embodiment of the present disclosure, forming the transparent conductive layer on both the front and back sides of the heterojunction cell may include:
forming a metal nanowire on at least one of the front surface and the back surface of the heterojunction unit;
and sputtering a first sub-transparent conductive layer on one side of the metal nanowire, which is away from the heterojunction unit, wherein the first sub-transparent conductive layer covers the metal nanowire.
As shown in fig. 7, a gate line electrode 58 is formed at a side of each first sub-transparent conductive layer 57 facing away from the heterojunction cell 50. Specifically, a silver paste may be screen-printed to form the gate line electrode 58.
In the case where the metal nanowire 56 is embedded in the first sub-transparent conductive layer 57 to obtain good conductivity, the gate electrode 58 may be directly used as the main gate without forming the sub-gate, thereby saving process steps and manufacturing costs.
In another embodiment of the present disclosure, as shown in fig. 8, in the case of forming the heterojunction cell 60, a second sub-transparent conductive layer 61 is deposited on both the front and back sides of the heterojunction cell 60;
as shown in fig. 9, a metal nanowire 62 is formed on a side of each second sub-transparent conductive layer 61 facing away from the heterojunction cell 60;
as shown in fig. 10, a first sub-transparent conductive layer 63 and a gate line electrode 64 are sequentially formed on a side of each layer of metal nanowires 62 facing away from the heterojunction cell 60.
Thus, the first sub-transparent conductive layer 63, the second sub-transparent conductive layer 61, and the metal nanowire 62 together serve as a transparent conductive layer. The metal nanowire 62 is wrapped between the first sub-transparent conductive layer 63 and the second sub-transparent conductive layer 61, so that the stability is better.
In combination with the above embodiment, the transparent conductive layer is formed on the front surface and the back surface of the heterojunction unit, and further includes:
and before forming the metal nanowire on at least one of the front surface and the back surface of the heterojunction unit, depositing a second sub-transparent conductive layer on at least one of the front surface and the back surface of the heterojunction unit, wherein the metal nanowire is formed on the second sub-transparent conductive layer.
In a method of fabricating a heterojunction solar cell according to still another embodiment of the present disclosure, as shown in fig. 11, tunneling transport layers 71 are deposited on the front and back sides of the heterojunction cell 70;
as shown in fig. 12, a metal nanowire 72, a transparent conductive layer 73, and a gate line electrode 74 are sequentially formed on a side of each tunneling transport layer 71 facing away from the heterojunction cell 70.
The tunneling transport layer 71 may be deposited by plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) or atomic layer deposition (Atomic layer deposition, ALD), and the process parameters may be selected and controlled according to the selected materials and parameters, which are not limited herein.
In this embodiment, the materials selected for the front tunneling layer 71 and the back tunneling layer 71 may be the same or different, and the thickness is not limited. For example, the front tunneling transport layer 71 is selected from silicon oxide or aluminum oxide, and the back tunneling transport layer 71 is selected from nanocrystalline silicon oxide, which is not limited herein.
Still another embodiment of the present disclosure further provides a method for fabricating a heterojunction solar cell, as shown in fig. 13, in which a metal nanowire 81, a transparent conductive layer 82, and a gate electrode 83 are sequentially formed on both the front and back sides of a heterojunction cell 80;
as shown in fig. 14, an antireflection material 84 is deposited on the side of the transparent conductive layer 82 on the front surface facing away from the heterojunction cell 80, the antireflection material 84 covering the transparent conductive layer 82 and the gate line electrode 83;
as shown in fig. 15, the antireflection material covering the gate line electrode 83 is removed, and the antireflection material covering the transparent conductive layer 82 remains as the antireflection layer 85.
In this embodiment, an etching process may be used to remove the anti-reflective material.
In another embodiment of the present disclosure, an anti-reflection layer may be deposited before the gate line electrode is formed, then a mask layer is formed on the anti-reflection layer, the anti-reflection layer is etched with the mask layer as a mask to form a groove at a position corresponding to the gate line electrode, the transparent conductive layer is exposed from the groove, and then the gate line electrode is filled in the groove with the mask layer as a mask.
The above embodiments are merely illustrative of the principles of the present disclosure and its efficacy, and are not intended to limit the disclosure. Modifications and variations may be made to the above-described embodiments by those of ordinary skill in the art without departing from the spirit and scope of the present disclosure. Accordingly, it is intended that all equivalent modifications and variations which a person having ordinary skill in the art would accomplish without departing from the spirit and technical spirit of the present disclosure be covered by the claims of the present disclosure.

Claims (12)

1. A heterojunction solar cell, comprising:
a heterojunction unit;
transparent conductive layers positioned on the front and back sides of the heterojunction unit;
the grid line electrode is positioned on one side of the transparent conductive layer, which is away from the heterojunction unit, and is electrically connected with the transparent conductive layer;
a tunneling transport layer disposed between the transparent conductive layer and the heterojunction cell;
the transparent conductive layer embedded with the metal nanowire wraps the metal nanowire.
2. The heterojunction solar cell of claim 1, wherein the transparent conductive layer in which the metal nanowires are embedded comprises: the metal nanowire is wrapped between the first sub-transparent conductive layer and the second sub-transparent conductive layer.
3. The heterojunction solar cell of claim 2, wherein the metal nanowires pass out of the first sub-transparent conductive layer in a direction away from the second sub-transparent conductive layer, and the gate wire electrode is in contact electrical connection with the first sub-transparent conductive layer and the metal nanowires.
4. The heterojunction solar cell of claim 2, wherein the thickness of the first sub-transparent conductive layer is in the range of 10-40nm.
5. The heterojunction solar cell of claim 1, wherein the tunneling transport layer is one layer or a stack of at least two layers of tunneling silicon oxide, nanocrystalline silicon oxide film, aluminum oxide or titanium oxide.
6. The heterojunction solar cell of claim 1, wherein the thickness of the tunneling transport layer is in the range of 0.5-2nm.
7. The heterojunction solar cell of claim 1, further comprising:
the anti-reflection layer is arranged on one side of the transparent conducting layer, which is away from the heterojunction unit, and is penetrated out by the grid line electrode.
8. The heterojunction solar cell of claim 7, wherein the antireflection layer is one layer or a laminate of at least two layers of a transparent conductive oxide film, silicon nitride, silicon oxide, magnesium fluoride, the transparent conductive oxide film having higher light transmittance than the transparent conductive layer.
9. The heterojunction solar cell of claim 1, wherein the heterojunction cell comprises:
a silicon substrate;
the device comprises a first doped amorphous silicon layer and a first intrinsic amorphous silicon layer arranged between the first doped amorphous silicon layer and the front surface of the silicon substrate, wherein the doping types of the silicon substrate and the first doped amorphous silicon layer are the same;
the silicon substrate comprises a silicon substrate body and a second doped amorphous silicon layer, wherein the silicon substrate body is provided with a back surface and a first intrinsic amorphous silicon layer, the second intrinsic amorphous silicon layer is arranged between the back surface of the silicon substrate body and the second doped amorphous silicon layer, and the doping types of the silicon substrate body and the second doped amorphous silicon layer are opposite.
10. A method of fabricating a heterojunction solar cell, comprising:
forming a heterojunction unit;
depositing tunneling transmission layers on the front and back sides of the heterojunction;
transparent conductive layers are formed on the front side and the back side of the heterojunction unit, the transparent conductive layers are formed on one side, away from the heterojunction unit, of the tunneling transmission layer, metal nanowires are embedded in at least one transparent conductive layer, and the transparent conductive layers embedded with the metal nanowires wrap the metal nanowires;
and forming a grid line electrode on one side of each layer of transparent conductive layer, which is away from the heterojunction unit, wherein the grid line electrode is connected with the transparent conductive layer.
11. The method of fabricating a heterojunction solar cell as claimed in claim 10, wherein forming transparent conductive layers on both the front and back sides of the heterojunction cell comprises:
forming the metal nanowire on at least one of the front surface and the back surface of the heterojunction unit;
sputtering a first sub-transparent conductive layer on one side of the metal nanowire facing away from the heterojunction unit, wherein the first sub-transparent conductive layer covers the metal nanowire.
12. The method of fabricating a heterojunction solar cell as claimed in claim 11, wherein transparent conductive layers are formed on both the front and back sides of the heterojunction cell, further comprising:
and before forming the metal nanowire on at least one of the front surface and the back surface of the heterojunction unit, depositing a second sub-transparent conductive layer on at least one of the front surface and the back surface of the heterojunction unit, wherein the metal nanowire is formed between the first sub-transparent conductive layer and the second sub-transparent conductive layer.
CN202310736755.7A 2023-06-21 2023-06-21 Heterojunction solar cell and preparation method thereof Pending CN116487447A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101488532A (en) * 2008-01-16 2009-07-22 财团法人工业技术研究院 Back electrode module of solar cell
CN105609642A (en) * 2016-04-08 2016-05-25 常州天合光能有限公司 Perovskite solar battery with nano wire transparent conductive substrate and preparation method
CN106910551A (en) * 2017-02-14 2017-06-30 哈尔滨工业大学深圳研究生院 One kind plating metal enhancing nesa coating and preparation method thereof
CN109037362A (en) * 2018-07-04 2018-12-18 中国科学院上海高等研究院 Transparency conducting layer and heterojunction solar battery for heterojunction solar battery
CN113594272A (en) * 2021-07-29 2021-11-02 安徽华晟新能源科技有限公司 Heterojunction solar cell and preparation method thereof
CN216488096U (en) * 2021-11-09 2022-05-10 嘉兴阿特斯技术研究院有限公司 Heterojunction battery and photovoltaic module
CN116111008A (en) * 2021-11-09 2023-05-12 嘉兴阿特斯技术研究院有限公司 Preparation method of heterojunction battery

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101488532A (en) * 2008-01-16 2009-07-22 财团法人工业技术研究院 Back electrode module of solar cell
CN105609642A (en) * 2016-04-08 2016-05-25 常州天合光能有限公司 Perovskite solar battery with nano wire transparent conductive substrate and preparation method
CN106910551A (en) * 2017-02-14 2017-06-30 哈尔滨工业大学深圳研究生院 One kind plating metal enhancing nesa coating and preparation method thereof
CN109037362A (en) * 2018-07-04 2018-12-18 中国科学院上海高等研究院 Transparency conducting layer and heterojunction solar battery for heterojunction solar battery
CN113594272A (en) * 2021-07-29 2021-11-02 安徽华晟新能源科技有限公司 Heterojunction solar cell and preparation method thereof
CN216488096U (en) * 2021-11-09 2022-05-10 嘉兴阿特斯技术研究院有限公司 Heterojunction battery and photovoltaic module
CN116111008A (en) * 2021-11-09 2023-05-12 嘉兴阿特斯技术研究院有限公司 Preparation method of heterojunction battery

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