CN102610665A - Silicon nanoporous array structured concentrator solar cell and preparation method thereof - Google Patents

Silicon nanoporous array structured concentrator solar cell and preparation method thereof Download PDF

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CN102610665A
CN102610665A CN2011104359471A CN201110435947A CN102610665A CN 102610665 A CN102610665 A CN 102610665A CN 2011104359471 A CN2011104359471 A CN 2011104359471A CN 201110435947 A CN201110435947 A CN 201110435947A CN 102610665 A CN102610665 A CN 102610665A
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hole array
silicon nano
nano hole
contact layer
electrode
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CN102610665B (en
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韩伟华
陈艳坤
李小明
杨富华
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Institute of Semiconductors of CAS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention discloses a silicon nanoporous array structured concentrator solar cell which comprises an Al/Si alloy back electrode, a p + back contact layer, a p-type crystalline silicon layer, an n + contact layer, a SiO2 passivation layer and a front electrode, wherein the p + back contact layer is arranged on the Al/Si alloy back electrode; the p-type crystalline silicon layer is arranged on the p + back contact layer; the n + contact layer is arranged on the p-type crystalline silicon layer, and is provided with a silicon nanoporous array; the SiO2 passivation layer is arranged on the surface of the n + contact layer provided with the silicon nanoporous array; and the front electrode is formed on the n + contact layer in a horizontal-vertical cross mode.

Description

Optically focused silicon nano hole array structure solar battery and preparation method thereof
Technical field
The present invention relates to a kind of solar cell and preparation method thereof, particularly about a kind of high-performance optically focused silicon nano hole array structure solar battery and preparation method thereof.
Background technology
Carry out the photovoltaic energy conversion through semiconductor pn knot in the solar cell two necessary steps are arranged.At first, the battery absorbing light produces electron-hole pair; Then, electronics and hole are separated by device architecture, electron stream to negative pole and the hole flow to anodal, thereby produce the photovoltaic voltage and current.In order to increase light absorption, a kind of method is that most solar cells rely on anti-reflective film to reduce the light reflection from the battery front surface; Another kind method is to adopt pyramid texture and be combined with the back side of optical reflection performance at the battery upper surface, makes the light transmission route lengthening that gets into battery, forms and falls into light, improves open circuit voltage.
The making that develops into high-efficiency silicon solar cell of nanoscale science and technology provides new opportunity.The silicon nanostructure material has the photovoltaic performance of remarkable excellence in the crystal silicon material.At present people to pay close attention to maximum be the solar cell that utilizes hydrogenation nanocrystal silicon (nc-Si:H) film to make.The nanostructure of silicon crystal grain has significant quantum limitation effect, helps the increase of optical absorption spectra scope.Hydrogenation nanocrystal silicon material also has bigger specific area, therefore has the bigger absorption coefficient of light and good absorption characteristic.The pn knot of the solar cell of silicon nanowire structure is grown in nano wire radially, and transporting with the light absorption direction of photo-generated carrier separates, and has longer minority carrier life time and transmission length.Simultaneously, the silicon atom in the silicon nanowires has directed ordering growth, can improve its crystalline quality, compares with the silicon nano thin-film to have bigger specific area, has good absorbing properties.But the silicon nanowires mechanical stability is not ideal enough, be easy to cave in, simultaneously bigger resistance and excessive surface recombination loss a large amount of photo-generated carriers.However, the solar cell of nanostructure still has higher battery efficiency than crystal silicon itself.
Silicon nano hole array structure battery has the potentiality of substituted for silicon nano thread structure battery.This structure is taken into account the mechanical stability of crystal silicon and the sunken optical absorption characteristics of silicon nanostructure, and the nano-pore array structure that has the polygon symmetric arrays simultaneously has good optically focused effect, therefore will have better battery efficiency and performance.
Summary of the invention
Main purpose of the present invention is to provide a kind of high-performance optically focused silicon nano hole array structure solar battery and preparation method thereof.With the compatible prerequisite of existing solar cell preparation technology under, the silicon nano hole array structure that proposes innovation has concentration structure, improves the transformation efficiency of solar cell with it.
The present invention provides a kind of optically focused silicon nano hole array structure solar battery, comprising:
One Al/Si alloy back electrode;
One p +Back contact, be positioned at Al/Si alloy back electrode above;
One p type crystal silicon material layer is positioned at p +Above the back contact;
One n +Contact layer, be positioned at p type crystal silicon material layer above, this n +Have the silicon nano hole array above the contact layer;
One SiO 2Passivation layer is positioned at the n that has the silicon nano hole array +The surface of contact layer;
Electrode before one intersects to form in n anyhow +On the contact layer.
The present invention also provides a kind of preparation method of optically focused silicon nano hole array structure solar battery, comprises the steps:
Step 1: form preparation one deck n at p type crystal silicon material layer upper surface +Contact layer forms pn +Junction structure;
Step 2: form p at p type crystal silicon material layer lower surface +Back contact;
Step 3: at n +Make the photoresist figure of silicon nano hole array on the contact layer upper surface by lithography;
Step 4: Ag is metal filled in the photoresist figure of silicon nano hole array, through inducing corroding method, form the silicon nano hole array;
Step 5: be positioned at the n that has the silicon nano hole array +The surface of contact layer, deposit SiO 2Passivation layer;
Step 6: at p +The back contact lower surface is made Al/Si alloy back electrode;
Step 7: peel off through photoetching, corrosion and evaporation of metal, at n +Electrode before making on the contact layer.
The invention has the beneficial effects as follows:
1, the nano-pore array structure solar cell of the present invention's design is taken into account the mechanical stability of crystal silicon and the sunken optical absorption characteristics of silicon nanostructure; The nano-pore array structure that has the polygon symmetric arrays simultaneously has good optically focused effect, therefore will have better battery efficiency and performance.
2, the metal catalytic that adopts of the present invention wet corrosion technique of inducing prepares the silicon nano hole array, and step is simple, is easy to the nanohole array of large-area preparation rule, and little to the silicon materials damage, cost of manufacture is low, and step is simple, and efficient is high.
In sum, this method for preparing silicon-based nanometer column array provided by the invention is compared with the traditional preparation process method, has above-mentioned tangible beneficial effect.Above-mentioned many advantages and practical value are had large improvement technically, and have produced handy and practical effect, thereby are suitable for practicality more.
Description of drawings
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing specify as after, wherein:
Fig. 1 is the structural representation of optically focused silicon-based nanopore array structure solar battery;
Fig. 2 is the flow chart of preparation optically focused silicon-based nanopore array structure solar battery provided by the invention;
Fig. 3 is an optically focused silicon-based nanopore array structure sketch map;
Embodiment
See also shown in Figure 1ly, the present invention provides a kind of optically focused silicon nano hole array structure solar battery, comprising:
One Al/Si alloy back electrode 101;
One p +Back contact 102, be positioned at Al/Si alloy back electrode 101 above;
One p type crystal silicon material layer 103 is positioned at p +Above the back contact 102;
One n +Contact layer 104, be positioned at p type crystal silicon material layer 103 above, this n +Have silicon nano hole array 105 above the contact layer 104, n is run through in the hole of this silicon nano hole array 105 + Contact layer 104, this n +The thickness of contact layer 104 is 100-1000nm, and the hole of this silicon nano hole array 105 is pressed polygon symmetry dot matrix structural cycle and arranged, and the aperture in silicon nano hole array 105 holes is 100nm-800nm, and periodicity is 3-5 aperture doubly;
One SiO 2Passivation layer 106 is positioned at the n that has silicon nano hole array 105 +The surface of contact layer 104;
Electrode 107 before one intersects to form in n anyhow +On the contact layer 104, the material of this preceding electrode 107 is Ti/Pd/Ag multiple layer metal finger electrode, ito transparent electrode or Graphene transparency electrode.
See also Fig. 2 and combine and consult Fig. 1 and Fig. 3, the present invention also provides a kind of preparation method of optically focused silicon nano hole array structure solar battery, comprises the steps:
Step 201: form preparation one deck n at p type crystal silicon material layer 103 upper surfaces +Contact layer 104 forms pn +Junction structure, said pn +Junction structure adopts ion implantation or diffusion method to form;
Step 202: form p at p type crystal silicon material layer 103 lower surfaces +Back contact 102;
Step 203: at n +Make the photoresist figure of silicon nano hole array 105 on contact layer 104 upper surfaces by lithography; The hole of this silicon nano hole array 105 is pressed polygon symmetry dot matrix structural cycle and is arranged; Hexagon 301 as shown in Figure 3, octagon 302 or decagon 303 etc., the aperture in silicon nano hole array 105 holes is 100nm-800nm; Periodicity is 3-5 aperture doubly, and the cycle hole system of battle formations shape of this silicon nano hole array 105 is adopted nanometer embossing, DUV photoetching, femtosecond laser mask-free photolithography or electron beam lithography to make and formed;
Step 204: Ag is metal filled in the photoresist figure of silicon nano hole array 105, form silicon nano hole array 105 through inducing corroding method, n is run through in the hole of this silicon nano hole array 105 + Contact layer 104, this n +The thickness of contact layer 104 is 100-1000nm, and said Ag metal lattice induces corrosion silicon materials process following: (a) adopt HF: AgNO 3Mixed liquor deposits layer of even Ag particle in concentration structure cycle hole system of battle formations shape; (b) use HF: H again 2O 2Mixed liquor anisotropic etching under the inducing of Ag goes out hole, and deionized water stops etching; (c) use HNO then 3: H 2O removes Ag particle, deionized water rinsing;
Step 205: be positioned at the n that has silicon nano hole array 105 +The surface of contact layer 104, deposit SiO 2Passivation layer 106;
Step 206: at p +Back contact 102 lower surfaces are made Al/Si alloy back electrode 101, and alloy temperature is 450 ℃;
Step 207: peel off through photoetching, corrosion and evaporation of metal, at n +Electrode 107 before making on the contact layer 104, the material of this preceding electrode 107 is Ti/Pd/Ag multiple layer metal finger electrode, ito transparent electrode or Graphene transparency electrode, this electrode is through annealing and n +Contact layer 104 forms ohmic contact.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1. optically focused silicon nano hole array structure solar battery comprises:
One Al/Si alloy back electrode;
One p +Back contact, be positioned at Al/Si alloy back electrode above;
One p type crystal silicon material layer is positioned at p +Above the back contact;
One n +Contact layer, be positioned at p type crystal silicon material layer above, this n +Have the silicon nano hole array above the contact layer;
One SiO 2Passivation layer is positioned at the n that has the silicon nano hole array +The surface of contact layer;
Electrode before one intersects to form in n anyhow +On the contact layer.
2. optically focused silicon nano hole array structure solar battery according to claim 1, wherein n is run through in the hole of silicon nano hole array +Contact layer, this n +The thickness of contact layer is 100-1000nm.
3. optically focused silicon nano hole array solar cells structure according to claim 2, wherein the hole of silicon nano hole array is pressed polygon symmetry dot matrix structural cycle and is arranged, and the aperture of silicon nano hole array hole is 100nm-800nm, and periodicity is 3-5 aperture doubly.
4. optically focused silicon nano hole array solar cells structure according to claim 1, wherein the material of preceding electrode is Ti/Pd/Ag multiple layer metal finger electrode, ito transparent electrode or Graphene transparency electrode.
5. the preparation method of an optically focused silicon nano hole array structure solar battery comprises the steps:
Step 1: form preparation one deck n at p type crystal silicon material layer upper surface +Contact layer forms pn +Junction structure;
Step 2: form p at p type crystal silicon material layer lower surface +Back contact;
Step 3: at n +Make the photoresist figure of silicon nano hole array on the contact layer upper surface by lithography;
Step 4: Ag is metal filled in the photoresist figure of silicon nano hole array, through inducing corroding method, form the silicon nano hole array;
Step 5: be positioned at the n that has the silicon nano hole array +The surface of contact layer, deposit SiO 2Passivation layer;
Step 6: at p +The back contact lower surface is made Al/Si alloy back electrode;
Step 7: peel off through photoetching, corrosion and evaporation of metal, at n +Electrode before making on the contact layer.
6. the method for preparing optically focused silicon nano hole array structure solar battery according to claim 5, wherein pn +Junction structure adopts ion implantation or diffusion method to form.
7. the method for preparing optically focused silicon nano hole array structure solar battery according to claim 5, wherein n is run through in the hole of silicon nano hole array +Contact layer, this n +The thickness of contact layer is 100-1000nm.
8. the method for preparing optically focused silicon nano hole array structure solar battery according to claim 5; The hole of silicon nano hole array wherein; Press polygon symmetry dot matrix structural cycle and arrange, the aperture of silicon nano hole array hole is 100nm-800nm, and periodicity is 3-5 aperture doubly.
9. the method for preparing optically focused silicon nano hole array structure solar battery according to claim 8, wherein the cycle hole system of battle formations shape of silicon nano hole array adopts nanometer embossing, DUV photoetching, femtosecond laser mask-free photolithography or electron beam lithography to make formation.
10. the method for preparing optically focused silicon nano hole array structure solar battery according to claim 5, wherein the material of preceding electrode is Ti/Pd/Ag multiple layer metal finger electrode, ito transparent electrode or Graphene transparency electrode.
CN201110435947.1A 2011-12-22 2011-12-22 Silicon nanoporous array structured concentrator solar cell and preparation method thereof Expired - Fee Related CN102610665B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219411A (en) * 2013-04-09 2013-07-24 中国科学院半导体研究所 Solar battery with composite light-trapping structure of nanopores and metal particles and preparation method
CN103390657A (en) * 2013-07-22 2013-11-13 中国科学院高能物理研究所 Selective grid of silicon nanometer column array photocell and preparation method of selective grid
CN105206705A (en) * 2015-08-18 2015-12-30 广东爱康太阳能科技有限公司 Low reflectivity solar crystalline silicon cell and manufacturing method thereof
CN106129185A (en) * 2016-08-24 2016-11-16 常州天合光能有限公司 Laser ablation electrically conducting transparent film preparation phasmon strengthens crystal silicon solar battery method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101488532A (en) * 2008-01-16 2009-07-22 财团法人工业技术研究院 Back electrode module of solar cell
CN101990713A (en) * 2008-02-03 2011-03-23 尼坦能源公司 Thin-film photovoltaic devices and related manufacturing methods
CN102097497A (en) * 2010-12-27 2011-06-15 重庆大学 Solar cell with high conversion efficiency
US20110146774A1 (en) * 2008-08-11 2011-06-23 Korea Research Institute Of Standards And Science Solar Cell Having Quantum Dot Nanowire Array and the Fabrication Method Thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101488532A (en) * 2008-01-16 2009-07-22 财团法人工业技术研究院 Back electrode module of solar cell
CN101990713A (en) * 2008-02-03 2011-03-23 尼坦能源公司 Thin-film photovoltaic devices and related manufacturing methods
US20110146774A1 (en) * 2008-08-11 2011-06-23 Korea Research Institute Of Standards And Science Solar Cell Having Quantum Dot Nanowire Array and the Fabrication Method Thereof
CN102097497A (en) * 2010-12-27 2011-06-15 重庆大学 Solar cell with high conversion efficiency

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219411A (en) * 2013-04-09 2013-07-24 中国科学院半导体研究所 Solar battery with composite light-trapping structure of nanopores and metal particles and preparation method
CN103390657A (en) * 2013-07-22 2013-11-13 中国科学院高能物理研究所 Selective grid of silicon nanometer column array photocell and preparation method of selective grid
CN103390657B (en) * 2013-07-22 2016-03-30 中国科学院高能物理研究所 Photronic selectivity grid of a kind of silicon nano column array and preparation method thereof
CN105206705A (en) * 2015-08-18 2015-12-30 广东爱康太阳能科技有限公司 Low reflectivity solar crystalline silicon cell and manufacturing method thereof
CN106129185A (en) * 2016-08-24 2016-11-16 常州天合光能有限公司 Laser ablation electrically conducting transparent film preparation phasmon strengthens crystal silicon solar battery method

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