CN103219411A - Solar battery with composite light-trapping structure of nanopores and metal particles and preparation method - Google Patents
Solar battery with composite light-trapping structure of nanopores and metal particles and preparation method Download PDFInfo
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- CN103219411A CN103219411A CN2013101214130A CN201310121413A CN103219411A CN 103219411 A CN103219411 A CN 103219411A CN 2013101214130 A CN2013101214130 A CN 2013101214130A CN 201310121413 A CN201310121413 A CN 201310121413A CN 103219411 A CN103219411 A CN 103219411A
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Abstract
The invention discloses a solar battery with a composite light-trapping structure of nanopores and metal particles and a preparation method. The solar battery comprises a P type silicon-based material film, an N<+> type silicon-nanopore two-dimensional array layer, Ti/Pd/Ag stripy ohmic metal electrodes, a P<+> type back electrode contact layer, a passivation layer, Al metal ohmic electrodes and a metal particle layer, wherein the N<+> type silicon-nanopore two-dimensional array layer is manufactured on the upper surface of the P type silicon-based material film and is provided with nanopores; the Ti/Pd/Ag stripy ohmic metal electrodes are stripy and are manufactured on the surface of the N<+> type silicon-nanopore two-dimensional array layer in an interval crossing manner, and cover partial nanopores; the P<+> type back electrode contact layer is manufactured on the lower surface of the P type silicon-based material film; the passivation layer is manufactured on the surface of the P<+> type silicon-based material film, and stripy window areas are formed on the passivation layer; the Al metal ohmic electrodes are manufactured in the stripy window areas of the passivation layer; and the metal particle layer is manufactured on the surface of the passivation layer. The invention has the advantage that the light-absorption efficiency and the photoelectric conversion efficiency of the solar battery are improved.
Description
Technical field
The present invention relates to a kind of solar cell and preparation method thereof, particularly about a kind of nano-pore and compound light trapping structure solar cell of metallic particles and preparation method.
Background technology
The exhaustion and the environmental pollution of tradition fossil energy force people's active development regenerative resource.Solar energy is as one of a kind of regenerative resource, has that reserves are abundant, cleaning and an advantage such as permanent, will occupy critical role in the energy general layout in future.Solar cell is the device that solar energy is converted into electric energy.Silica-based solar cell is because advantages such as abundant, nontoxic, good stability of material source and process conditions maturation are the main flows in present photovoltaic market.In order to increase the light absorption of solar cell, a kind of method commonly used is to adopt antireflective film to eliminate surface reflection; Another kind method is surperficial light trapping structure.Industrial common employing inverted pyramid structure, characteristic size is a micron dimension.For the low-cost thin-film solar cells of the second generation, absorbed layer only is several micron thickness, and making this inverted pyramid structure on the surface is infeasible.
Along with the development of nanoscale science and technology, the light absorption that the nanometer light trapping structure improves solar cell becomes the research focus.Nanometer light trapping structure such as metal nanoparticle, nano wire and nano-pore have unique photoelectric characteristic, surface plasma volume scattering and near field as metallic particles strengthen, and light sensitivity that the quantum size effect of nano wire and nano-pore, pyroelecthc properties, specific area increase cause and biochemical sensitivity strengthen.People such as Derkacs in 2006 are contained solution deposited gold nano particle on the surperficial ITO layer of non-crystal silicon solar cell of gold nano grain by spin coating, metallic particles is coupled sunlight as the sub-wavelength scattering object and is limited in the absorbed layer of solar cell, short-circuit current density increases by 8.1%, and conversion efficiency increases by 8.3%.Human wet etching systems such as Huang had prepared unordered silicon nanometer line solar battery in 2011, and conversion efficiency is 10.1%.Human deep-UV lithographies such as Peng have prepared orderly silicon nano hole solar cell, and conversion efficiency is 9.5%.Than silicon nanowires, it is good that silicon nano hole has a mechanically stable, the advantage that is difficult for caving in.
In order further to improve the light absorption of solar cell, we have proposed a kind of nano-pore and compound light trapping structure solar cell of metallic particles and preparation method, both taken into account the sunken optical absorption characteristics of silicon nano hole and metallic particles, take into account the mechanical stability of silicon nano hole again, the light trapping structure parameter of silicon nano hole and metallic particles can be optimized respectively simultaneously.In addition, compare with preparation method such as electron beam exposure, nano impression and the deep-UV lithography of conventional ordered nano hole pattern, this method does not need mask plate, advantage simply and fast having aspect the preparation ordered nano hole pattern.
Summary of the invention
Main purpose of the present invention is to provide a kind of nano-pore and compound light trapping structure solar cell of metallic particles and preparation method, to improve the light absorption and the photoelectric conversion efficiency of solar cell.
Purpose of the present invention and technical problem are achieved through the following technical solutions:
The invention provides the compound light trapping structure solar cell of a kind of nano-pore and metallic particles, comprising:
One P type silica-base material film;
One N+ type silicon nano hole two-dimensional array layer, it is produced on the upper surface of P type silica-base material film, on this N+ type silicon nano hole two-dimensional array layer nano-pore is arranged;
Ti/Pd/Ag bar shaped ohmic metal electrode, this Ti/Pd/Ag bar shaped ohmic metal electrode is a strip, it is produced on the surface of N+ type silicon nano hole two-dimensional array layer at interval across, and the cover part nano-pore;
One P+ type back electrode contact layer, it is produced on the lower surface of P type silica-base material film;
One passivation layer, it is produced on the surface of P+ type back electrode contact layer, and this passivation layer is formed with the strip window oral region;
Al metal Ohmic electrode, it is produced in the passivation layer strip window oral region;
One metallic particles layer, it is produced on the surface of passivation layer.
The present invention also provides the preparation method of a kind of nano-pore and the compound light trapping structure solar cell of metallic particles, comprises the steps:
Step 1: the upper surface at P type silica-base material film adopts phosphorous diffusion, nanoimprinting technology and dry etching technology, make one deck N+ type silicon nano hole two-dimensional array layer, on this N+ type silicon nano hole two-dimensional array layer nano-pore is arranged, between P type silica-base material film and N+ type silicon nano hole two-dimensional array layer, form the PN+ knot;
Step 2: adopt boron diffusion to form P+ type back electrode contact layer at P type silica-base material film lower surface;
Step 3: the PECVD deposition process is adopted on the surface at P+ type back electrode contact layer, makes passivation layer;
Step 4: adopt photoetching and lithographic technique, on passivation layer, have many bar shaped windows;
Step 5: depositing metal aluminium in the marking shape window of passivation layer, this metallic aluminium contacts with P+ type back electrode contact layer, forms the ohmic contact back electrode;
Step 6: on N+ type silicon nano hole two-dimensional array layer, make Ti/Pd/Ag bar shaped ohmic metal electrode, this Ti/Pd/Ag bar shaped ohmic metal electrode cover part nano-pore at interval across;
Step 7: preparation metallic particles layer on passivation layer, finish preparation.
The invention has the beneficial effects as follows:
1, a kind of nano-pore of the present invention's design and the preparation method of the compound light trapping structure solar cell of metallic particles, both taken into account the sunken optical absorption characteristics of silicon nano hole and metallic particles, take into account the mechanical stability of silicon nano hole again, the light trapping structure parameter of silicon nano hole and metallic particles can be optimized respectively simultaneously, therefore will have better conversion pool efficient and performance.
2, the photoetching process of the present invention's employing prepares the nanohole array figure, does not need mask plate, and cost of manufacture is low, and step is simple, is easy to the orderly nanohole array of large-area preparation.
Description of drawings
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and, the present invention is described in further detail with reference to accompanying drawing, wherein:
Fig. 1 is a structural representation of the present invention;
Fig. 2 is preparation method's flow chart of the present invention.
Embodiment
See also Fig. 1, the invention provides the compound light trapping structure solar cell of a kind of nano-pore and metallic particles, comprising:
One P type silica-base material film 11, this P type silica-base material film 11 is monocrystalline silicon or polysilicon, thickness is 20 μ m-50 μ m;
One N+ type silicon nano hole two-dimensional array layer 12, it is produced on the upper surface of P type silica-base material film 11, on this N+ type silicon nano hole two-dimensional array layer 12 nano-pore 121 is arranged, the diameter of nano-pore 121 is 10nm-900nm on this N+ type silicon nano hole two-dimensional array layer 12, cycle is 20nm-1000nm, the degree of depth is identical with the thickness of N+ type silicon nano hole two-dimensional array layer 12, is 50nm-500nm;
Ti/Pd/Ag bar shaped ohmic metal electrode 13, this Ti/Pd/Ag bar shaped ohmic metal electrode 13 is a strip, it is produced on the surface of N+ type silicon nano hole two-dimensional array layer 12 at interval across, and cover part nano-pore 121;
One P+ type back electrode contact layer 14, it is produced on the lower surface of P type silica-base material film 11;
One passivation layer 15, it is produced on the surface of P+ type back electrode contact layer 14, and this passivation layer 15 is formed with the strip window oral region, and the material of these passivation layer 15 materials is SiO
2, Si
3N
4, TiO
2, ITO or ZnO:Al, thickness is 5nm-50nm;
Al metal Ohmic electrode 16, it is produced in the passivation layer 15 strip window oral regions;
One metallic particles layer 17, it is produced on the surface of passivation layer 15, and the material of this metallic particles layer 17 is Au, Ag or Cu, and the diameter of each particle of this metallic particles layer 17 is 20nm-1000nm, and the cycle is 30-1000nm.
See also Fig. 2 and shown in Figure 1, the invention provides the preparation method of the compound light trapping structure solar cell of a kind of nano-pore and metallic particles, comprise the steps: in conjunction with consulting
Step 1: the upper surface at P type silica-base material film 11 adopts phosphorous diffusion, nanoimprinting technology and dry etching technology, makes one deck N+ type silicon nano hole two-dimensional array layer 12; This P type silica-base material film 11 is monocrystalline silicon or polysilicon, and thickness is 20 μ m-50 μ m; On this N+ type silicon nano hole two-dimensional array layer 12 nano-pore 121 is arranged, adopt phosphorous diffusion to form the PN+ knot between P type silica-base material film 11 and N+ type silicon nano hole two-dimensional array layer 12, doping content is 10
18-10
20Cm
-3The diameter of nano-pore 121 is 10nm-900nm on this N+ type silicon nano hole two-dimensional array layer 12, and the cycle is 20nm-1000nm, and the degree of depth is identical with the thickness of N+ type silicon nano hole two-dimensional array layer 12, is 50nm-500nm; Nano-pore 121 adopts the medium ball optical lithography techniques to obtain mask graph on this N+ type silicon nano hole two-dimensional array layer 12, and detailed process comprises: (a) at these P type silica-base material film 11 upper surface spin coating photoresists, thickness is 100nm-1500nm; (b) spin coating has the solution of polystyrene spheres or silica spheres on photoresist, forms individual layer polystyrene spheres or silica spheres, and the diameter of ball is 100nm-2000nm;
With wavelength is the rayed medium ball of 365nm, and the beneath photoresist of medium ball is exposed; (d) sample is put into deionized water, ultrasonic removal medium ball; (e) use developing liquid developing at last, the deionized water photographic fixing.(f) adopt the ICP dry etching that nano-pore 121 mask graphs are transferred on the P type silica-base material film 11, form N+ type silicon nano hole two-dimensional array layer 12, etching gas is SF
6: C
4F
8=1: 1, power 800W;
Step 2: adopt boron diffusion to form P+ type back electrode contact layer 14 at P type silica-base material film 11 lower surfaces, doping content is 10
19-10
20Cm
-3
Step 3: the PECVD deposition process is adopted on the surface at P+ type back electrode contact layer 14, makes passivation layer 15, and the material of these passivation layer 15 materials is SiO
2, Si
3N
4, TiO
2, ITO or ZnO:Al, thickness is 5nm-50nm;
Step 4: adopt photoetching and lithographic technique, have many bar shaped windows on passivation layer 15, etching gas is C
4F
8: He: H
2=1: 15: 1, power 1000W;
Step 5: depositing metal aluminium in the marking shape window of passivation layer 15, this metallic aluminium contacts with P+ type back electrode contact layer 14, forms ohmic contact back electrode 16,400 ℃-500 ℃ of annealing temperatures;
Step 6: on N+ type silicon nano hole two-dimensional array layer 12, make Ti/Pd/Ag bar shaped ohmic metal electrode 13 across at interval, these Ti/Pd/Ag bar shaped ohmic metal electrode 13 cover part nano-pores 121, thickness of electrode is followed successively by 60nm, 60nm and 200nm, 400 ℃-500 ℃ of annealing temperatures;
Step 7: preparation metallic particles layer 17 on passivation layer 15, it is Au, Ag or Cu that this metallic particles layer 17 adopts the material of the thick metal film of metal deposition technique deposit 10nm, the diameter of each particle of this metallic particles layer 17 that obtains by 200 ℃ of-300 ℃ of short annealings is 20nm-1000nm, cycle is 30-1000nm, finishes preparation.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. nano-pore and the compound light trapping structure solar cell of metallic particles comprise:
One P type silica-base material film;
One N+ type silicon nano hole two-dimensional array layer, it is produced on the upper surface of P type silica-base material film, on this N+ type silicon nano hole two-dimensional array layer nano-pore is arranged;
Ti/Pd/Ag bar shaped ohmic metal electrode, this Ti/Pd/Ag bar shaped ohmic metal electrode is a strip, it is produced on the surface of N+ type silicon nano hole two-dimensional array layer at interval across, and the cover part nano-pore;
One P+ type back electrode contact layer, it is produced on the lower surface of P type silica-base material film;
One passivation layer, it is produced on the surface of P+ type back electrode contact layer, and this passivation layer is formed with the strip window oral region;
Al metal Ohmic electrode, it is produced in the passivation layer strip window oral region;
One metallic particles layer, it is produced on the surface of passivation layer.
2. the compound light trapping structure solar cell of nano-pore according to claim 1 and metallic particles, wherein P type silica-base material film is monocrystalline silicon or polysilicon, thickness is 20 μ m-50 μ m.
3. the compound light trapping structure solar cell of nano-pore according to claim 1 and metallic particles, wherein the diameter of nano-pore is 10nm-900nm on this N+ type silicon nano hole two-dimensional array layer, cycle is 20nm-1000nm, the degree of depth is identical with the thickness of N+ type silicon nano hole two-dimensional array layer, is 50nm-500nm.
4. the compound light trapping structure solar cell of nano-pore according to claim 1 and metallic particles, wherein the material of passivation material is SiO
2, Si
3N
4, TiO
2, ITO or ZnO:Al, thickness is 5nm-50nm.
5. the compound light trapping structure solar cell of nano-pore according to claim 1 and metallic particles, wherein the material of this metallic particles layer is Au, Ag or Cu, and the diameter of each particle of this metallic particles layer is 20nm-1000nm, and the cycle is 30-1000nm.
6. the preparation method of nano-pore and the compound light trapping structure solar cell of metallic particles comprises the steps:
Step 1: the upper surface at P type silica-base material film adopts phosphorous diffusion, nanoimprinting technology and dry etching technology, make one deck N+ type silicon nano hole two-dimensional array layer, on this N+ type silicon nano hole two-dimensional array layer nano-pore is arranged, between P type silica-base material film and N+ type silicon nano hole two-dimensional array layer, form the PN+ knot;
Step 2: adopt boron diffusion to form P+ type back electrode contact layer at P type silica-base material film lower surface;
Step 3: the PECVD deposition process is adopted on the surface at P+ type back electrode contact layer, makes passivation layer;
Step 4: adopt photoetching and lithographic technique, on passivation layer, have many bar shaped windows;
Step 5: depositing metal aluminium in the marking shape window of passivation layer, this metallic aluminium contacts with P+ type back electrode contact layer, forms the ohmic contact back electrode;
Step 6: on N+ type silicon nano hole two-dimensional array layer, make Ti/Pd/Ag bar shaped ohmic metal electrode, this Ti/Pd/Ag bar shaped ohmic metal electrode cover part nano-pore at interval across;
Step 7: preparation metallic particles layer on passivation layer, finish preparation.
7. the preparation method of nano-pore according to claim 6 and the compound light trapping structure solar cell of metallic particles, wherein P type silica-base material film is monocrystalline silicon or polysilicon, thickness is 20 μ m-50 μ m.
8. the preparation method of nano-pore according to claim 6 and the compound light trapping structure solar cell of metallic particles, wherein the diameter of nano-pore is 10nm-900nm on this N+ type silicon nano hole two-dimensional array layer, cycle is 20nm-1000nm, the degree of depth is identical with the thickness of N+ type silicon nano hole two-dimensional array layer, is 50nm-500nm.
9. the preparation method of nano-pore according to claim 6 and the compound light trapping structure solar cell of metallic particles, wherein the material of passivation material is SiO
2, Si
3N
4, TiO
2, ITO or ZnO:Al, thickness is 5nm-50nm.
10. the preparation method of nano-pore according to claim 6 and the compound light trapping structure solar cell of metallic particles, wherein the material of this metallic particles layer is Au, Ag or Cu, the diameter of each particle of this metallic particles layer is 20nm-1000nm, and the cycle is 30-1000nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811589A (en) * | 2014-02-17 | 2014-05-21 | 中国科学院半导体研究所 | Manufacturing method of light trapping structures on front and back faces of semiconductor film solar cell |
| CN103811590A (en) * | 2014-02-17 | 2014-05-21 | 中国科学院半导体研究所 | Manufacturing method of mixed light trapping structures on front and back faces of semiconductor film solar cell |
| CN104241428A (en) * | 2014-09-28 | 2014-12-24 | 青岛大学 | Two-dimensional silicon-based micro-nano photonic crystal solar cell |
| CN109698246A (en) * | 2018-12-25 | 2019-04-30 | 嘉兴尚能光伏材料科技有限公司 | PERC solar cell and preparation method thereof |
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| CN101789462A (en) * | 2010-02-24 | 2010-07-28 | 中国科学院半导体研究所 | Broad-spectrum absorption black silicon solar cell structure and preparation method thereof |
| CN102610665A (en) * | 2011-12-22 | 2012-07-25 | 中国科学院半导体研究所 | Silicon nanoporous array structured concentrator solar cell and preparation method thereof |
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2013
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101789462A (en) * | 2010-02-24 | 2010-07-28 | 中国科学院半导体研究所 | Broad-spectrum absorption black silicon solar cell structure and preparation method thereof |
| CN102610665A (en) * | 2011-12-22 | 2012-07-25 | 中国科学院半导体研究所 | Silicon nanoporous array structured concentrator solar cell and preparation method thereof |
Non-Patent Citations (1)
| Title |
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| ZI OUYANG ET AL.: "Effective light trapping in polycrystalline silicon thin-film solar cells by means of rear localized surface plasmons", 《APPLIED PHYSICS LETTERS》, vol. 96, no. 26, 1 July 2010 (2010-07-01), XP012131719, DOI: 10.1063/1.3460288 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811589A (en) * | 2014-02-17 | 2014-05-21 | 中国科学院半导体研究所 | Manufacturing method of light trapping structures on front and back faces of semiconductor film solar cell |
| CN103811590A (en) * | 2014-02-17 | 2014-05-21 | 中国科学院半导体研究所 | Manufacturing method of mixed light trapping structures on front and back faces of semiconductor film solar cell |
| CN104241428A (en) * | 2014-09-28 | 2014-12-24 | 青岛大学 | Two-dimensional silicon-based micro-nano photonic crystal solar cell |
| CN109698246A (en) * | 2018-12-25 | 2019-04-30 | 嘉兴尚能光伏材料科技有限公司 | PERC solar cell and preparation method thereof |
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Application publication date: 20130724 |