CN103022214A - Silicon-based germanium epitaxial structure and application thereof - Google Patents
Silicon-based germanium epitaxial structure and application thereof Download PDFInfo
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 41
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 title abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 5
- 239000010703 silicon Substances 0.000 title abstract description 5
- 238000002360 preparation method Methods 0.000 claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 28
- 239000004038 photonic crystal Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000002161 passivation Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 72
- 238000000576 coating method Methods 0.000 claims description 44
- 239000011248 coating agent Substances 0.000 claims description 43
- 239000000377 silicon dioxide Substances 0.000 claims description 36
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000009616 inductively coupled plasma Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 239000013079 quasicrystal Substances 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 34
- 230000000694 effects Effects 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000000407 epitaxy Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000035800 maturation Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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Abstract
The invention discloses a waveguide near-infrared detector based on silicon-based germanium epitaxy and a preparation method thereof, wherein the waveguide near-infrared detector comprises: an n-type Si substrate; a Ge/Si buffer layer formed on the n-type Si substrate; SiO deposited on the Ge/Si buffer layer2An air hole type or dielectric column type photonic crystal prepared in the layer; a Ge-based epitaxial thin film formed on the photonic crystal; preparing an n-type Si contact electrode Al on a step formed by etching the outer side of the Ge-based epitaxial film until reaching the Ge/Si buffer layer; in the aboveA P-type Si contact electrode prepared at the central part of the upper surface of the Ge-based epitaxial film; and a passivation layer formed on the etched Ge-based epitaxial thin film. The invention solves the problems of application of two-dimensional photonic crystal photon forbidden band effect in the existing near-infrared detector, release of stress generated by mismatch of Ge and Si crystal lattices and the like.
Description
Technical field
The invention belongs to semiconductor integrated technology field, relate generally to the substrat structure design based on the near infrared detector of silica-based germanium extension, a kind ofly can realize complete forbidden band effect to certain specific wavelength, and significantly improve the manufacturing technology of performances of IR, especially a kind of waveguide near infrared detector based on silica-based germanium extension and preparation method thereof.
Background technology
Along with the extensive use of modern information technologies with to its further investigation, the optoelectronic integrated technology that is interconnected as representative with optical fiber communication, light has proposed more and more urgent requirement to semiconductor photoelectronic device and circuit.The preparation response wave length is 1.3 μ m and 1.55 μ m, and has the photodetector of two-forty, high-quantum efficiency and low-dark current and realize that the optoelectronic integration receiver chip is the target that people pursue always.
Although the photodetector technique in this respect that adopts the material preparation of III-V family is comparative maturity and entered the industrialization stage, there is following problem in it: 1) cost is high, is difficult to realize " Fiber to the home "; 2) the calorifics mechanical performance is relatively poor; 3) crystal mass is relatively poor; 4) can not be compatible with the silicon technology of existing maturation.And the cost of the photodetector of employing Si/Ge material preparation is low, compatible with the silicon technology of maturation, be easy to integratedly, and band gap width can be regulated by the Ge component, can make the response wave length of detector be operated in 1.3 μ m and 1.6 μ m by regulating the Ge component and introducing surface undulation.
For optoelectronics, the preparation of high performance device is the prerequisite that is grown to high-quality material.There is 4.2% mismatch between Si, the Ge material, directly can produces larger stress at Si material growth Ge layer, introduce higher dislocation density, can not satisfy the requirement of preparation high-performance detector.The Si/Ge alloy Multiple Quantum Well of growing high-quality is a kind of feasible method, and successfully to have prepared response wave length be the detector of 1.3 μ m.But owing to being subjected to the restriction of critical thickness and quantum limitation effect, be difficult to make the detector of 1.6 μ m, for this reason, people have attempted different solutions.
Summary of the invention
The technical problem that (one) will solve
Problem and shortage for above-mentioned present existence, purpose of the present invention mainly provides a kind of waveguide near infrared detector based on silica-based germanium extension and preparation method thereof, solving the application of 2 D photon crystal forbidden photon band effect in the existing near infrared detector, and the problems such as release of the stress that produces of Ge and Si lattice mismatch.
(2) technical scheme
For achieving the above object, the invention provides a kind of waveguide near infrared detector based on silica-based germanium extension, comprising: N-shaped Si substrate 101; Ge/Si resilient coating 102 in 101 formation of this N-shaped Si substrate; The SiO of deposition on this Ge/Si resilient coating 102
2Air pass or the medium column type photon crystal 1 04 of preparation in the layer; Ge base epitaxial film 105 in this photon crystal 1 04 formation; In the outside of this Ge of etching base epitaxial film 105 until in this Ge/Si resilient coating 102 and the N-shaped Si contact electrode Al103 for preparing on the step that forms; P type Si contact electrode 107 in the upper surface core preparation of this Ge base epitaxial film 105; And the passivation layer 106 of these Ge base epitaxial film 105 formation after being etched.
For achieving the above object, the present invention also provides a kind of preparation method of the waveguide near infrared detector based on silica-based germanium extension, comprising: select N-shaped Si substrate 101; Form Ge/Si resilient coating 102 at this N-shaped Si substrate 101; Deposit SiO at this Ge/Si resilient coating 102
2Layer is at this SiO
2Preparation air pass or medium column type photon crystal 1 04 in the layer; Form Ge base epitaxial film 105 at this photon crystal 1 04; The outside of this Ge base epitaxial film 105 of etching is until form step in this Ge/Si resilient coating 102, preparation N-shaped Si contact electrode Al103 on this step; Upper surface core in this Ge base epitaxial film 105 prepares P type Si contact electrode 107; This Ge base epitaxial film 105, this N-shaped Si contact electrode Al103 and this P type Si contact electrode 107 surfaces after being etched form passivation layer 106; And the passivation layers 106 that this N-shaped Si contact electrode Al103 and this P type Si contact electrode 107 surfaces are formed carry out etching, until expose this N-shaped Si contact electrode Al103 and this P type Si contact electrode 107.
(3) beneficial effect
Can find out from technique scheme, the present invention has following beneficial effect:
1, waveguide near infrared detector based on silica-based germanium extension provided by the invention and preparation method thereof, for the detector of making 1.6 μ m provides a kind of new thinking, major embodiment is both ways: on the one hand when at the basic epitaxial loayer of Si substrate growth Ge, photon crystal structure can discharge the stress that Si and Ge lattice mismatch produce effectively, and then obtains the Ge base epitaxial film of better quality; On the other hand the structural parameters of photonic crystal all can according to the requirement of near infrared light wave band respectively independence and freedom regulate, realizing non-complete forbidden photon band or complete forbidden photon band, thus the originally light of directive substrate restriction and the basic epitaxial thin-film layer of the Ge that be coupled back.
2, waveguide near infrared detector based on silica-based germanium extension provided by the invention and preparation method thereof can be realized complete forbidden photon band effect to certain specific wavelength, and significantly improves Ge base epitaxial film quality.
3, waveguide near infrared detector based on silica-based germanium extension provided by the invention and preparation method thereof, the photon crystal structure parameter can be carried out independently design and adjusting according to the dielectric constant of backing material and certain wavelength.
Description of drawings
Fig. 1 is the structural representation of the waveguide near infrared detector based on silica-based germanium extension provided by the invention;
Fig. 2 is the schematic diagram of the waveguide near infrared detector Air pass photonic crystal underlying structure based on silica-based germanium extension provided by the invention;
Fig. 3 is the schematic diagram of the waveguide near infrared detector medium column type photonic crystal underlying structure based on silica-based germanium extension provided by the invention;
Fig. 4 is that preparation provided by the invention is based on the process chart of the waveguide near infrared detector of silica-based germanium extension.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The present invention mainly is the restriction that is subjected to critical thickness and quantum limitation effect in order to solve existing Si/Ge detector, be difficult to make the key issues such as detector of 1.6 μ m, and a kind of near infrared detector with photon crystal structure structure that can significantly improve Ge base epitaxial film quality that provides and preparation method thereof, wherein, the structural parameters of photonic crystal can independent regulation, can be applied to various types of backing materials and corresponding wave band.
As shown in Figure 1, Fig. 1 is the structural representation of the waveguide near infrared detector based on silica-based germanium extension provided by the invention, and this waveguide near infrared detector comprises: N-shaped Si substrate 101; Ge/Si resilient coating 102 in 101 formation of this N-shaped Si substrate; The SiO of deposition on this Ge/Si resilient coating 102
2Air pass or the medium column type photon crystal 1 04 of preparation in the layer; Ge base epitaxial film 105 in this photon crystal 1 04 formation; In the outside of this Ge of etching base epitaxial film 105 until in this Ge/Si resilient coating 102 and the N-shaped Si contact electrode Al103 for preparing on the step that forms; P type Si contact electrode 107 in the upper surface core preparation of this Ge base epitaxial film 105; And the passivation layer 106 of these Ge base epitaxial film 105 formation after being etched.
Wherein, described air pass or medium column type photon crystal 1 04 are the structures that is periodic arrangement by the dielectric material of two or more dielectric constant in the space, its lattice types is tetragonal, triangular crystal lattice, honeycomb lattice or photon quasicrystal, its periodic regime is 200-800nm, and etching depth is 50-1000nm.
Described photon quasicrystal is any in five heavy symmetries, eightfold symmetry, ten heavy symmetries and four kinds of symmetrical structures of ten Double Symmetries.In described air pass or the medium column type photon crystal 1 04, medium post or airport be shaped as in taper, cylindricality, pyramid, terrace with edge shape or the hemisphere any.
Described air pass or medium column type photon crystal 1 04, if air pass photonic crystal, then the lattice period scope is 200-800nm, and the diameter of airport is 200-800nm, and the height of airport is 50-1000nm; If medium column type photonic crystal, then the lattice period scope is 200-800n, the diameter of medium post is 200-800nm, the height of medium post is 800-2000nm, its medium post is comprised of two parts: highly be 200-1000nm, wherein the cylindrical height of end portion is 0-1000nm, and the height of the cone of upper part is 0-800nm.
In the present invention, being applicable to prepare in the near infrared detector dielectric material of photonic crystal in the substrate is in silicon dioxide, carborundum, the titanium dioxide any.Photon crystal structure provided by the invention not only is suitable for non-waveguide photodetector, and is applicable equally to waveguide photodetector, also improves other optics of a certain wave band reflectivity applicable to needs.
In the present invention, described N-shaped Si contact electrode Al103 generally can be annular or bar shaped, and described P type Si contact electrode 107 is circle or quadrangle.
When N-shaped Si contact electrode Al103 is annular, the outside of this Ge base epitaxial film 105 of described etching is until in this Ge/Si resilient coating 102, in an annulus of edge's etching on these Ge base epitaxial film 105 surfaces, until be etched in this Ge/Si resilient coating 102, and then form an annular step.
When N-shaped Si contact electrode Al103 is bar shaped, the outside of this Ge base epitaxial film 105 of described etching is until in this Ge/Si resilient coating 102, rectangular in one of each etching of both sides on these Ge base epitaxial film 105 surfaces, until be etched in this Ge/Si resilient coating 102, and then form two bar shaped steps.
The invention provides and a kind ofly can realize complete forbidden photon band effect to certain specific wavelength, and significantly improve near infrared detector with photon crystal structure structure of Ge base epitaxial film quality and preparation method thereof.Wherein, Fig. 2 is the schematic diagram of the waveguide near infrared detector Air pass photonic crystal underlying structure based on silica-based germanium extension provided by the invention, comprises Si substrate 201, Ge/Si resilient coating 202 and air pass SiO
2 Photonic crystal array 203; Fig. 3 is the schematic diagram of the waveguide near infrared detector medium column type photonic crystal underlying structure based on silica-based germanium extension provided by the invention, comprises Si substrate 301, Ge/Si resilient coating 302 and medium column type SiO
2 Photonic crystal array 303.
Based on the waveguide near infrared detector based on silica-based germanium extension shown in Figure 1, Fig. 4 shows preparation method's flow chart of the waveguide near infrared detector based on silica-based germanium extension provided by the invention, and the method may further comprise the steps:
Step 401: select N-shaped Si substrate 101;
Step 402: form Ge/Si resilient coating 102 at this N-shaped Si substrate 101;
Step 403: deposit SiO at this Ge/Si resilient coating 102
2Layer is at this SiO
2Preparation air pass or medium column type photon crystal 1 04 in the layer;
Step 404: form Ge base epitaxial film 105 at this photon crystal 1 04;
Step 405: the outside of this Ge base epitaxial film 105 of etching is until form step in this Ge/Si resilient coating 102, preparation N-shaped Si contact electrode Al103 on this step;
Step 406: the upper surface core in this Ge base epitaxial film 105 prepares P type Si contact electrode 107;
Step 407: this Ge base epitaxial film 105, this N-shaped Si contact electrode Al103 and this P type Si contact electrode 107 surfaces after being etched form passivation layer 106; And
Step 408: the passivation layer 106 to this N-shaped Si contact electrode Al103 and the 107 surface formation of this P type Si contact electrode carries out etching, until expose this N-shaped Si contact electrode Al103 and this P type Si contact electrode 107.
Wherein, described in the step of N-shaped Si substrate 101 formation Ge/Si resilient coatings 102, this Ge/Si resilient coating 102 is by high vacuum chemical vapour deposition (Ultra high VacuumChemical Vapor Deposition, UHVCVD) be formed on this N-shaped Si substrate 101, describedly deposit SiO at this Ge/Si resilient coating 102
2In the step of layer, this SiO
2Layer is to be formed on this Ge/Si resilient coating 102 described SiO by plasma enhanced chemical vapor deposition method (Plasma Enhanced Chemical Vapor Deposition, PECVD) deposition
2The growth thickness of layer is 50-1000nm.Described at SiO
2Prepare in the step of air pass or medium column type photon crystal 1 04 in the layer, this air pass or medium column type photon crystal 1 04 are to be formed at this SiO by inductively coupled plasma (Inductively Coupled Plasma, ICP) selectivity dry etching
2In the layer.Described in the step of photon crystal 1 04 formation Ge base epitaxial film 105, described Ge base epitaxial film 105 is to be formed on this photon crystal 1 04 by high vacuum chemical vapour deposition (Ultra high Vacuum Chemical VaporDeposition, UHVCVD).
Described N-shaped Si contact electrode Al103 can be annular or bar shaped, and described P type Si contact electrode 107 can be circle or quadrangle.
When N-shaped Si contact electrode Al103 is annular, the outside of this Ge base epitaxial film 105 of described etching is until form step in this Ge/Si resilient coating 102, in an annulus of edge's etching on these Ge base epitaxial film 105 surfaces, until be etched in this Ge/Si resilient coating 102, and then form an annular step.
When N-shaped Si contact electrode Al103 is bar shaped, the outside of this Ge base epitaxial film 105 of described etching is until in this Ge/Si resilient coating 102, rectangular in one of each etching of both sides on these Ge base epitaxial film 105 surfaces, until be etched in this Ge/Si resilient coating 102, and then form two bar shaped steps.
Described this Ge base epitaxial film 105, this N-shaped Si contact electrode Al103 and this P type Si contact electrode 107 surfaces after being etched form in the step of passivation layer 106, and described passivation layer 106 forms by PECVD or ald.
The present invention can form a kind of photon crystal structure novel, that have complete forbidden band in Ge base epitaxial loayer bottom, and then is applied in the design of near infrared detector substrate.Its advantage is: (1) when Si substrate growth Ge base epitaxial loayer, photon crystal structure can discharge the stress that Si and Ge lattice mismatch produce effectively, and then obtains the basic epitaxial film of Ge of better quality; (2) no matter be air pass photonic crystal, or the photon crystal structure of medium column type, all can according to the requirement of near infrared light wave band respectively independence and freedom regulate, realizing non-complete forbidden band or complete forbidden band, thus the originally light of directive substrate restriction and the basic epitaxial thin-film layer of the Ge that be coupled back.Photon crystal structure of the present invention is not only applicable to prepare near infrared detector at GaAs or silicon substrate, also needs to improve other opto-electronic devices of a certain wave band reflectivity applicable to preparation.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (17)
1. the waveguide near infrared detector based on silica-based germanium extension is characterized in that, comprising:
N-shaped Si substrate (101);
Ge/Si resilient coating (102) in this N-shaped Si substrate (101) formation;
SiO in the upper deposition of this Ge/Si resilient coating (102)
2Air pass or the medium column type photonic crystal (104) of preparation in the layer;
At the Ge of this photonic crystal (104) formation base epitaxial film (105);
In the outside of this Ge of etching base epitaxial film (105) until in this Ge/Si resilient coating (102) and the N-shaped Si contact electrode Al (103) for preparing on the step that forms;
P type Si contact electrode (107) in the upper surface core preparation of this Ge base epitaxial film (105); And
The passivation layer (106) that this Ge base epitaxial film (105) after being etched forms.
2. the waveguide near infrared detector based on silica-based germanium extension according to claim 1, it is characterized in that, described air pass or medium column type photonic crystal (104) are the structures that is periodic arrangement by the dielectric material of two or more dielectric constant in the space, its lattice types is tetragonal, triangular crystal lattice, honeycomb lattice or photon quasicrystal, its periodic regime is 200～800nm, and etching depth is 50～1000nm.
3. the waveguide near infrared detector based on silica-based germanium extension according to claim 2 is characterized in that, described photon quasicrystal is any in five heavy symmetries, eightfold symmetry, ten heavy symmetries and four kinds of symmetrical structures of ten Double Symmetries.
4. the waveguide near infrared detector based on silica-based germanium extension according to claim 1 and 2, it is characterized in that, in described air pass or the medium column type photonic crystal (104), medium post or airport be shaped as in taper, cylindricality, pyramid, terrace with edge shape or the hemisphere any.
5. the waveguide near infrared detector based on silica-based germanium extension according to claim 1, it is characterized in that, described air pass or medium column type photonic crystal (104), if air pass photonic crystal, then the lattice period scope is 200-800nm, the diameter of airport is 200-800nm, and the height of airport is 50-1000nm; If medium column type photonic crystal, then the lattice period scope is 200-800n, the diameter of medium post is 200-800nm, the height of medium post is 800-2000nm, its medium post is comprised of two parts: highly be 200-1000nm, wherein the cylindrical height of end portion is 0-1000nm, and the height of the cone of upper part is 0-800nm.
6. the waveguide near infrared detector based on silica-based germanium extension according to claim 1 is characterized in that, described N-shaped Si contact electrode Al (103) is annular or bar shaped, and described P type Si contact electrode (107) is circle or quadrangle.
7. the waveguide near infrared detector based on silica-based germanium extension according to claim 6, it is characterized in that, when described N-shaped Si contact electrode Al (103) is annular, the outside of this Ge base epitaxial film (105) of described etching is until in this Ge/Si resilient coating (102), in an annulus of edge's etching on this Ge base epitaxial film (105) surface, until be etched in this Ge/Si resilient coating (102), and then form an annular step.
8. the waveguide near infrared detector based on silica-based germanium extension according to claim 6, it is characterized in that, when described N-shaped Si contact electrode Al (103) is bar shaped, the outside of this Ge base epitaxial film (105) of described etching is until in this Ge/Si resilient coating (102), rectangular in one of each etching of both sides on this Ge base epitaxial film (105) surface, until be etched in this Ge/Si resilient coating (102), and then form two bar shaped steps.
9. the preparation method based on the waveguide near infrared detector of silica-based germanium extension is characterized in that, comprising:
Select N-shaped Si substrate (101);
Form Ge/Si resilient coating (102) at this N-shaped Si substrate (101);
At this Ge/Si resilient coating (102) deposition SiO
2Layer is at this SiO
2Preparation air pass or medium column type photonic crystal (104) in the layer;
Form Ge base epitaxial film (105) at this photonic crystal (104);
The outside of this Ge base epitaxial film (105) of etching is until form step, preparation N-shaped Si contact electrode Al (103) on this step in this Ge/Si resilient coating (102);
Upper surface core in this Ge base epitaxial film (105) prepares P type Si contact electrode (107);
This Ge base epitaxial film (105), this N-shaped Si contact electrode Al (103) and this P type Si contact electrode (107) surface after being etched form passivation layer (106); And
Passivation layer (106) to this N-shaped Si contact electrode Al (103) and the formation of this P type Si contact electrode (107) surface carries out etching, until expose this N-shaped Si contact electrode Al (103) and this P type Si contact electrode (107).
10. the preparation method of the waveguide near infrared detector based on silica-based germanium extension according to claim 9, it is characterized in that, described in the step of N-shaped Si substrate (101) formation Ge/Si resilient coating (102), this Ge/Si resilient coating (102) is to be formed on this N-shaped Si substrate (101) by high vacuum chemical vapour deposition (Ultra highVacuum Chemical Vapor Deposition, UHVCVD).
11. the preparation method of the waveguide near infrared detector based on silica-based germanium extension according to claim 9 is characterized in that, and is described at this Ge/Si resilient coating (102) deposition SiO
2In the step of layer, this SiO
2Layer is to be formed on this Ge/Si resilient coating (102) by plasma enhanced chemical vapor deposition method (Plasma EnhancedChemical Vapor Deposition, PECVD) deposition.
12. the preparation method of the waveguide near infrared detector based on silica-based germanium extension according to claim 9 is characterized in that, and is described at SiO
2Prepare in the step of air pass or medium column type photonic crystal (104) in the layer, this air pass or medium column type photonic crystal (104) are to be formed at this SiO by inductively coupled plasma (Inductively Coupled Plasma, ICP) selectivity dry etching
2In the layer.
13. the preparation method of the waveguide near infrared detector based on silica-based germanium extension according to claim 9, it is characterized in that, described in the step of photonic crystal (104) formation Ge base epitaxial film (105), described Ge base epitaxial film (105) is to be formed on this photonic crystal (104) by high vacuum chemical vapour deposition (Ultrahigh Vacuum Chemical Vapor Deposition, UHVCVD).
14. the preparation method of the waveguide near infrared detector based on silica-based germanium extension according to claim 9, it is characterized in that, described N-shaped Si contact electrode Al (103) is annular or bar shaped, and described P type Si contact electrode (107) is circle or quadrangle.
15. the preparation method of the waveguide near infrared detector based on silica-based germanium extension according to claim 14, it is characterized in that, when described N-shaped Si contact electrode Al (103) is annular, the outside of this Ge base epitaxial film (105) of described etching is until form step in this Ge/Si resilient coating (102), in an annulus of edge's etching on this Ge base epitaxial film (105) surface, until be etched in this Ge/Si resilient coating (102), and then form an annular step.
16. the preparation method of the waveguide near infrared detector based on silica-based germanium extension according to claim 14, it is characterized in that, when described N-shaped Si contact electrode Al (103) is bar shaped, the outside of this Ge base epitaxial film (105) of described etching is until in this Ge/Si resilient coating (102), rectangular in one of each etching of both sides on this Ge base epitaxial film (105) surface, until be etched in this Ge/Si resilient coating (102), and then form two bar shaped steps.
17. the preparation method of the waveguide near infrared detector based on silica-based germanium extension according to claim 9, it is characterized in that, described this Ge base epitaxial film (105), this N-shaped Si contact electrode Al (103) and this P type Si contact electrode (107) surface after being etched forms in the step of passivation layer (106), and described passivation layer (106) forms by PECVD or ald.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538490A (en) * | 2014-12-14 | 2015-04-22 | 复旦大学 | High sensitivity photoelectric detector and preparation method thereof based on curled semiconductor film |
| CN104752548A (en) * | 2013-12-24 | 2015-07-01 | 光澄科技股份有限公司 | Germanium photodetector with slow light enhanced absorption |
| CN105070779A (en) * | 2015-07-07 | 2015-11-18 | 中国科学院半导体研究所 | Surface incident silicon-based germanium photoelectric detector with sub-wavelength grating structure, and preparation method thereof |
| CN106469765A (en) * | 2015-08-20 | 2017-03-01 | 格罗方德半导体公司 | There is the germanium photodetector of SOI doped source |
| CN108063168A (en) * | 2017-12-14 | 2018-05-22 | 中国科学院微电子研究所 | Ge photoelectric detector based on strain regulation and control and manufacturing method thereof |
| CN115207150A (en) * | 2022-07-21 | 2022-10-18 | 北京工业大学 | High-speed photoelectric detector covered by full communication wave band |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6897471B1 (en) * | 2003-11-28 | 2005-05-24 | The United States Of America As Represented By The Secretary Of The Air Force | Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon |
| CN101088168A (en) * | 2004-12-24 | 2007-12-12 | 皮雷利&C.有限公司 | Photodetector in germanium on silicon |
| US20100282304A1 (en) * | 2008-11-18 | 2010-11-11 | Industrial Technology Research Institute | Solar cell and method of manufacturing the same |
| US20120025212A1 (en) * | 2008-09-16 | 2012-02-02 | Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University | GeSn Infrared Photodetectors |
-
2012
- 2012-12-26 CN CN201210576133.4A patent/CN103022214B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6897471B1 (en) * | 2003-11-28 | 2005-05-24 | The United States Of America As Represented By The Secretary Of The Air Force | Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon |
| CN101088168A (en) * | 2004-12-24 | 2007-12-12 | 皮雷利&C.有限公司 | Photodetector in germanium on silicon |
| US20120025212A1 (en) * | 2008-09-16 | 2012-02-02 | Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University | GeSn Infrared Photodetectors |
| US20100282304A1 (en) * | 2008-11-18 | 2010-11-11 | Industrial Technology Research Institute | Solar cell and method of manufacturing the same |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752548A (en) * | 2013-12-24 | 2015-07-01 | 光澄科技股份有限公司 | Germanium photodetector with slow light enhanced absorption |
| CN104538490A (en) * | 2014-12-14 | 2015-04-22 | 复旦大学 | High sensitivity photoelectric detector and preparation method thereof based on curled semiconductor film |
| CN105070779A (en) * | 2015-07-07 | 2015-11-18 | 中国科学院半导体研究所 | Surface incident silicon-based germanium photoelectric detector with sub-wavelength grating structure, and preparation method thereof |
| CN106469765A (en) * | 2015-08-20 | 2017-03-01 | 格罗方德半导体公司 | There is the germanium photodetector of SOI doped source |
| CN108063168A (en) * | 2017-12-14 | 2018-05-22 | 中国科学院微电子研究所 | Ge photoelectric detector based on strain regulation and control and manufacturing method thereof |
| CN108063168B (en) * | 2017-12-14 | 2020-03-06 | 中国科学院微电子研究所 | Ge photoelectric detector based on strain regulation and control and manufacturing method thereof |
| CN115207150A (en) * | 2022-07-21 | 2022-10-18 | 北京工业大学 | High-speed photoelectric detector covered by full communication wave band |
| CN115207150B (en) * | 2022-07-21 | 2023-10-10 | 北京工业大学 | High-speed photoelectric detector covered by full communication wave band |
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