CN203589067U - Graphical sapphire substrate - Google Patents
Graphical sapphire substrate Download PDFInfo
- Publication number
- CN203589067U CN203589067U CN201320703572.7U CN201320703572U CN203589067U CN 203589067 U CN203589067 U CN 203589067U CN 201320703572 U CN201320703572 U CN 201320703572U CN 203589067 U CN203589067 U CN 203589067U
- Authority
- CN
- China
- Prior art keywords
- sapphire substrate
- layer
- substrate
- reflector
- graphic element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 54
- 239000010980 sapphire Substances 0.000 title claims abstract description 54
- 230000000737 periodic effect Effects 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 abstract description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
The utility model discloses a graphical sapphire substrate, and belongs to the semiconductor field. The sapphire substrate comprises a substrate layer and a reflecting layer. A plurality of projections are formed on the graphical surface of the substrate layer. The reflecting layer is deposited on the top parts of the plurality of projections. The plurality of projections and the reflecting layer form a periodic graph array on the substrate layer, and graph units of the periodic graph array are of a cone-shaped structure. According to the utility model, the substrate layer of the graphical sapphire substrate is provided with the reflecting layer, and the refractive index of a gallium nitride layer of an epitaxial wafer grown on the substrate layer differs a lot from the refractive index of the sapphire substrate, so that light is not liable to be transmitted but liable to be reflected on the interface of the sapphire substrate, and the reflectivity of the sapphire substrate is improved; in addition, the sapphire substrate is of the cone-shaped structure, so that the sapphire substrate can effectively reduce the defect density of the epitaxial wafer, and the light extraction efficiency of a light emitting diode is increased.
Description
Technical field
The utility model relates to optical semiconductor technical field, particularly a kind of patterned Sapphire Substrate.
Background technology
Sapphire Substrate (Pattern Sapphire Substrate is called for short PSS) technology is the comparatively ripe technical scheme in current foreign substrate gallium nitride material growth field.Wherein, adopt graphical sapphire substrate technology can alleviate preferably the stress in Sapphire Substrate and GaN epitaxial growth, reduce the defect concentration in epitaxy of gallium nitride, improve the crystal mass of epitaxial material.
But, when light enters patterned Sapphire Substrate from active layer, because the refractive index (2.5) of sapphire refractive index (1.7～1.8) and gallium nitride differs less between the two, light is easier to, on the interface of Sapphire Substrate, transmission occurs, reflection of light rate is not high, thereby causes the light extraction efficiency of light-emitting diode still lower.
Summary of the invention
In order to solve the problem of prior art, the utility model embodiment provides a kind of patterned Sapphire Substrate.Described technical scheme is as follows:
The utility model provides a kind of patterned Sapphire Substrate, described Sapphire Substrate comprises substrate layer, described Sapphire Substrate also comprises reflector, on the patterned surface of described substrate layer, be formed with multiple projections, described reflector is deposited on the top of described multiple projections, described multiple projection and described reflector form periodic pattern array on described substrate layer, and the graphic element of described periodic pattern array is cone structure.
Preferably, reflector is silicon dioxide layer.
Equally preferably, reflector is distribution Bragg reflector layer.
Further, the silicon dioxide layer that described distribution Bragg reflector layer is alternating growth and silicon dioxide layer and the magnesium oxide layer of titanium dioxide layer or alternating growth.
Alternatively, cone structure is one or more in conical structure and polygonal pyramid structure.
Preferably, the spacing between adjacent described graphic element is 1～10um.。
Further, the bottom width of described graphic element is 0.5～10um.
Further, the height of described graphic element is 0.5～5um.
Further, the height of described projection is 0.2～4.8um.
Further, the thickness in described reflector is 0.2～4.8um.
The beneficial effect that the technical scheme that the utility model embodiment provides is brought is:
By reflector being set on the substrate layer of patterned Sapphire Substrate, make the to grow gallium nitride layer of the epitaxial wafer on it and the refractive index of Sapphire Substrate differs larger, therefore, light is difficult for being transmitted more easily and is reflected on the interface of Sapphire Substrate, improved the reflectivity of Sapphire Substrate, and Sapphire Substrate adopts cone structure, can more effectively reduce the defect concentration of epitaxial wafer, thereby improve the light extraction efficiency of light-emitting diode.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the utility model embodiment, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the cross-sectional view of a kind of patterned Sapphire Substrate of providing of the utility model embodiment;
Fig. 1 a-1c is the preparation process schematic diagram of the Sapphire Substrate that provides of the utility model embodiment.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing, the utility model execution mode is described in further detail.
Embodiment
The utility model embodiment provides a kind of patterned Sapphire Substrate, and referring to Fig. 1, this Sapphire Substrate comprises substrate layer 1 and reflector 22.Substrate layer 1 patterned surface on be formed with multiple protruding 11, reflector 22 is deposited on multiple tops of protruding 11, and multiple protruding 11 and reflector 22 on substrate layer 1, form periodic pattern array, the graphic element of this periodic pattern array is cone structure.
Alternatively, cone structure can be one or more in conical structure and polygonal pyramid structure.Wherein, polygonal pyramid includes but not limited to triangular pyramid, rectangular pyramid, pentagonal pyramid and hexagonal pyramid.This cone structure, because Sapphire Substrate no longer adopts the apex structure of plane, can more effectively reduce the defect concentration of epitaxial wafer, and then improves the light extraction efficiency of light-emitting diode.
Further, reflector 22 can be silicon dioxide layer or DBR(Distributed Bragg Reflection, distributed bragg reflector mirror) layer in one.Wherein, DBR layer can adopt SiO
2layer and TiO
2the structure of layer alternating growth, also can adopt SiO
2the structure of layer and MgO layer alternating growth.
Alternatively, in Sapphire Substrate, vapor deposition reflector can adopt PECVD(Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) or sol-gal process in one.
In the present embodiment, the bottom width of the graphic element of periodic pattern array is 0.5～10um, is highly 0.5～5um.And the spacing between adjacent graphic element is 1～10um.Wherein, when graphic element is conical structure, bottom width refers to bottom surface diameter of a circle; When graphic element is polygonal pyramid structure, bottom width refers to the external diameter of a circle of bottom surface polygon.
Further, the height of projection 11 is 0.2～4.8um, and the thickness in reflector 22 is 0.2～4.8um.
In conjunction with Fig. 1 a to Fig. 1 c, the manufacturing process of the Sapphire Substrate to the present embodiment describes again below:
As shown in Figure 1a, first in Sapphire Substrate 1, deposit reflector 2 and the photoresist mask 3 that a layer thickness is 50nm～5um; The figure of photoresist mask is transferred on emission layer and formed patterned reflector 21 again, referring to Fig. 1 b; Then adopt wet corrosion technique corrosion Sapphire Substrate to obtain having the Sapphire Substrate of projection 11 and initial reflection layer 21, referring to Fig. 1 c; Finally adopt dry etching processing to obtain patterned Sapphire Substrate.
Wherein, the figure of photoresist mask is transferred on silica membrane and can be adopted the one in wet etching or dry etching.The graphic element of photoresist mask can be one or more the combination in circular, square, triangle or irregular figure.
The utility model by arranging reflector on the substrate layer of patterned Sapphire Substrate, make the to grow gallium nitride layer of the epitaxial wafer on it and the refractive index of Sapphire Substrate differs larger, therefore, light is difficult for being transmitted more easily and is reflected on the interface of Sapphire Substrate, improved the reflectivity of Sapphire Substrate, and Sapphire Substrate adopts cone structure, can more effectively reduce the defect concentration of epitaxial wafer, thereby improve the light extraction efficiency of light-emitting diode.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (10)
1. a patterned Sapphire Substrate, described Sapphire Substrate comprises substrate layer, it is characterized in that,
Described Sapphire Substrate also comprises reflector, on the patterned surface of described substrate layer, be formed with multiple projections, described reflector is deposited on the top of described multiple projections, described multiple projection and described reflector form periodic pattern array on described substrate layer, and the graphic element of described periodic pattern array is cone structure.
2. Sapphire Substrate according to claim 1, is characterized in that, described reflector is silicon dioxide layer.
3. Sapphire Substrate according to claim 1, is characterized in that, described reflector is distribution Bragg reflector layer.
4. Sapphire Substrate according to claim 3, is characterized in that, the silicon dioxide layer that described distribution Bragg reflector layer is alternating growth and silicon dioxide layer and the magnesium oxide layer of titanium dioxide layer or alternating growth.
5. Sapphire Substrate according to claim 1, is characterized in that, described cone structure is one or more in conical structure and polygonal pyramid structure.
6. according to the Sapphire Substrate described in claim 1-5 any one, it is characterized in that, the spacing between adjacent described graphic element is 1～10um.
7. according to the Sapphire Substrate described in claim 1-5 any one, it is characterized in that, the bottom width of described graphic element is 0.5～10um.
8. according to the Sapphire Substrate described in claim 1-5 any one, it is characterized in that, the height of described graphic element is 0.5～5um.
9. Sapphire Substrate according to claim 7, is characterized in that, the height of described projection is 0.2～4.8um.
10. Sapphire Substrate according to claim 7, is characterized in that, the thickness in described reflector is 0.2～4.8um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320703572.7U CN203589067U (en) | 2013-11-08 | 2013-11-08 | Graphical sapphire substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320703572.7U CN203589067U (en) | 2013-11-08 | 2013-11-08 | Graphical sapphire substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203589067U true CN203589067U (en) | 2014-05-07 |
Family
ID=50586931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320703572.7U Expired - Lifetime CN203589067U (en) | 2013-11-08 | 2013-11-08 | Graphical sapphire substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203589067U (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269479A (en) * | 2014-09-24 | 2015-01-07 | 杭州士兰明芯科技有限公司 | LED substrate structure and manufacturing method of LED substrate structure |
| CN104659140A (en) * | 2015-03-06 | 2015-05-27 | 天津三安光电有限公司 | Multijunction solar cell |
| CN107868937A (en) * | 2017-09-29 | 2018-04-03 | 江西沃格光电股份有限公司 | Anti-dazzle sapphire screen and preparation method thereof |
| CN108172670A (en) * | 2018-01-09 | 2018-06-15 | 福建兆元光电有限公司 | LED epitaxial wafer substrat structure and manufacturing method |
| CN108269896A (en) * | 2016-12-31 | 2018-07-10 | 山东华光光电子股份有限公司 | The sapphire pattern substrate and preparation method that a kind of laser ablation dislocation hemisphere is combined with ODR |
| CN110246939A (en) * | 2019-06-24 | 2019-09-17 | 东莞市中图半导体科技有限公司 | A kind of graphical composite substrate, preparation method and LED epitaxial wafer |
| CN111244238A (en) * | 2020-03-26 | 2020-06-05 | 湘能华磊光电股份有限公司 | High-brightness semiconductor light-emitting diode chip and manufacturing method thereof |
| CN112201734A (en) * | 2020-09-15 | 2021-01-08 | 泉州三安半导体科技有限公司 | Composite pattern substrate and manufacturing method thereof, and LED structure and manufacturing method thereof |
| CN113161459A (en) * | 2021-02-25 | 2021-07-23 | 华灿光电（浙江）有限公司 | Patterned substrate, light-emitting diode epitaxial wafer and preparation method thereof |
| CN113316853A (en) * | 2020-12-25 | 2021-08-27 | 福建晶安光电有限公司 | Patterned substrate, light-emitting diode and preparation method |
| CN116544332A (en) * | 2023-07-06 | 2023-08-04 | 江西兆驰半导体有限公司 | Patterned sapphire substrate and preparation method thereof |
-
2013
- 2013-11-08 CN CN201320703572.7U patent/CN203589067U/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269479B (en) * | 2014-09-24 | 2017-01-25 | 杭州士兰明芯科技有限公司 | LED substrate structure and manufacturing method of LED substrate structure |
| CN104269479A (en) * | 2014-09-24 | 2015-01-07 | 杭州士兰明芯科技有限公司 | LED substrate structure and manufacturing method of LED substrate structure |
| CN104659140A (en) * | 2015-03-06 | 2015-05-27 | 天津三安光电有限公司 | Multijunction solar cell |
| CN108269896A (en) * | 2016-12-31 | 2018-07-10 | 山东华光光电子股份有限公司 | The sapphire pattern substrate and preparation method that a kind of laser ablation dislocation hemisphere is combined with ODR |
| CN107868937B (en) * | 2017-09-29 | 2020-06-19 | 江西沃格光电股份有限公司 | Anti-dazzle sapphire screen and preparation method thereof |
| CN107868937A (en) * | 2017-09-29 | 2018-04-03 | 江西沃格光电股份有限公司 | Anti-dazzle sapphire screen and preparation method thereof |
| CN108172670A (en) * | 2018-01-09 | 2018-06-15 | 福建兆元光电有限公司 | LED epitaxial wafer substrat structure and manufacturing method |
| CN110246939A (en) * | 2019-06-24 | 2019-09-17 | 东莞市中图半导体科技有限公司 | A kind of graphical composite substrate, preparation method and LED epitaxial wafer |
| CN111244238A (en) * | 2020-03-26 | 2020-06-05 | 湘能华磊光电股份有限公司 | High-brightness semiconductor light-emitting diode chip and manufacturing method thereof |
| CN112201734A (en) * | 2020-09-15 | 2021-01-08 | 泉州三安半导体科技有限公司 | Composite pattern substrate and manufacturing method thereof, and LED structure and manufacturing method thereof |
| CN112201734B (en) * | 2020-09-15 | 2021-11-05 | 泉州三安半导体科技有限公司 | Composite pattern substrate and manufacturing method thereof, and LED structure and manufacturing method thereof |
| CN113316853A (en) * | 2020-12-25 | 2021-08-27 | 福建晶安光电有限公司 | Patterned substrate, light-emitting diode and preparation method |
| CN113161459A (en) * | 2021-02-25 | 2021-07-23 | 华灿光电（浙江）有限公司 | Patterned substrate, light-emitting diode epitaxial wafer and preparation method thereof |
| CN116544332A (en) * | 2023-07-06 | 2023-08-04 | 江西兆驰半导体有限公司 | Patterned sapphire substrate and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203589067U (en) | Graphical sapphire substrate | |
| US20140191243A1 (en) | Patterned articles and light emitting devices therefrom | |
| US8993993B2 (en) | Semiconductor light emitting device and method for fabricating the same | |
| JP5283114B2 (en) | Nitride semiconductor light emitting device having pattern forming substrate and method of manufacturing the same | |
| CN104332541A (en) | Patterned substrate and preparation method thereof, epitaxial-wafer preparation method and epitaxial wafer | |
| CN211125683U (en) | Patterned composite substrate and L ED epitaxial wafer | |
| US9190395B2 (en) | GaN-based LED | |
| CN210403763U (en) | Graphical composite substrate and LED epitaxial wafer | |
| CN103022293B (en) | Graph substrate and preparation method thereof | |
| CN110246939A (en) | A kind of graphical composite substrate, preparation method and LED epitaxial wafer | |
| CN103178179B (en) | Silicide compound substrate GaN based LED (Light-Emitting Diode) chip with two patterned sides and manufacturing method thereof | |
| CN102194941A (en) | High-efficiency light-emitting diode (LED) with built-in cavity and preparation method thereof | |
| CN101814426A (en) | Production method for sapphire pattern substrate | |
| CN103887390A (en) | Patterned sapphire substrate, manufacture method thereof and manufacture method of epitaxial wafer | |
| CN103337576A (en) | Patterned substrate, manufacturing method of patterned substrate, LED chip and manufacturing method of LED chip | |
| CN102244168A (en) | LED (light emitting diode) and manufacturing method thereof | |
| CN103022291B (en) | Patterned substrate equipped with omnibearing reflector and preparation method thereof | |
| CN102315097A (en) | Method for preparing graphical substrate by using nanorods | |
| KR20230039726A (en) | Patterned substrate, light emitting diode and manufacturing method | |
| CN104319329A (en) | Patterned substrate, manufacturing method of patterned substrate, epitaxial wafer manufacturing method and epitaxial wafer | |
| KR100716752B1 (en) | Light emitting element and method for manufacturing thereof | |
| CN216250771U (en) | Composite pattern substrate and LED epitaxial structure comprising same | |
| CN105047768A (en) | Novel high-brightness PSS preparation method | |
| KR101680852B1 (en) | Semiconductor Light Emitting Device and Manufacturing Method Thereof | |
| CN108269896A (en) | The sapphire pattern substrate and preparation method that a kind of laser ablation dislocation hemisphere is combined with ODR |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140507 |
|
| CX01 | Expiry of patent term |