CN103022215B - A kind of silicon germanium epitaxial structure and preparation method thereof - Google Patents
A kind of silicon germanium epitaxial structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of non-waveguide near infrared detector based on silicon germanium extension and preparation method thereof, this non-waveguide near infrared detector comprises: N-shaped Si substrate; In the SiO of this N-shaped Si deposited on substrates
2the air pass of preparation in layer or medium column type photonic crystal; The Ge base epitaxial film that this photonic crystal is formed; The P type Si that this Ge base epitaxial film is formed; The anti-reflection layer that this P type Si is formed; In the outside of this anti-reflection layer of etching until N-shaped Si contact electrode Al prepared by the step formed in this N-shaped Si substrate; In the inner side of this anti-reflection layer of etching until this P type Si upper surface and P type Si contact electrode prepared by the step that formed; And the passivation layer that this anti-reflection layer after being etched is formed.Utilize the present invention, solve the application of 2 D photon crystal forbidden photon band effect in existing near infrared detector, and the problem such as the release of stress that produces of Ge and Si lattice mismatch.
Description
Technical field
The invention belongs to field of semiconductor integration technology, the substrat structure related generally to based on the near infrared detector of silicon germanium extension designs, that one can realize complete forbidden band effect to certain specific wavelength, and significantly improve the manufacturing technology of performances of IR, especially a kind of non-waveguide near infrared detector based on silicon germanium extension and preparation method thereof.
Background technology
Along with the extensive use of modern information technologies with to its further investigation, with the optoelectronic integrated technology that optical fiber communication, light network are representative, more and more urgent requirement is proposed to semiconductor photoelectronic device and circuit.Preparing response wave length is 1.3 μm and 1.55 μm, and has the photodetector of two-forty, high-quantum efficiency and low-dark current and to realize optoelectronic integration receiver chip be the target that people pursue always.
Although adopt the photodetector prepared of III-V material technique in this respect comparative maturity and entered the industrialization stage, there is following problem in it: 1) cost is high, is difficult to realize " fiber to the home "; 2) thermo-mechanical poor-performing; 3) crystal mass is poor; 4) can not be compatible with the silicon technology of existing maturation.And the cost of the photodetector adopting Si/Ge material to prepare is low, compatible with the silicon technology of maturation, be easy to integrated, and band gap width can be regulated by Ge component, the response wave length of detector can be made to be operated in 1.3 μm and 1.6 μm by regulating Ge component and introducing surface undulation.
For optoelectronics, the preparation of high performance device is grown to prerequisite with high-quality material.There is the mismatch of 4.2% between Si, Ge material, on Si material, directly grow Ge layer can produce larger stress, introduce higher dislocation density, the requirement of preparation high-performance detector can not be met.The Si/Ge alloy Multiple Quantum Well of growing high-quality is a kind of feasible method, and has successfully prepared the detector that response wave length is 1.3 μm.But due to the restriction by critical thickness and quantum limitation effect, be difficult to the detector of making 1.6 μm, for this reason, people have attempted different solutions.
Summary of the invention
(1) technical problem that will solve
For above-mentioned current Problems existing and deficiency, object of the present invention mainly provides a kind of non-waveguide near infrared detector based on silicon germanium extension and preparation method thereof, to solve the application of 2 D photon crystal forbidden photon band effect in existing near infrared detector, and the problem such as the release of stress that produces of Ge and Si lattice mismatch.
(2) technical scheme
For achieving the above object, the invention provides a kind of non-waveguide near infrared detector based on silicon germanium extension, comprising: N-shaped Si substrate 101; The SiO of deposition on this N-shaped Si substrate 101
2the air pass of preparation in layer or medium column type photon crystal 1 03; The Ge base epitaxial film 104 that this photon crystal 1 03 is formed; The P type Si105 that this Ge base epitaxial film 104 is formed; The anti-reflection layer 106 that this P type Si105 is formed; In the outside of this anti-reflection layer 106 of etching until N-shaped Si contact electrode Al102 prepared by the step formed in this N-shaped Si substrate 101; In the inner side of this anti-reflection layer 106 of etching until this P type Si105 upper surface and P type Si contact electrode 108 prepared by the step that formed; And the passivation layer 107 that this anti-reflection layer 106 after being etched is formed.
For achieving the above object, present invention also offers a kind of preparation method of the non-waveguide near infrared detector based on silicon germanium extension, comprising: select N-shaped Si substrate 101; This N-shaped Si substrate 101 deposits SiO
2layer, at this SiO
2air pass or medium column type photon crystal 1 03 is prepared in layer; This photon crystal 1 03 is formed Ge base epitaxial film 104; This Ge base epitaxial film 104 forms P type Si105; This P type Si105 forms anti-reflection layer 106; Etch the outside of this anti-reflection layer 106 until form step in this N-shaped Si substrate 101, on this step, prepare N-shaped Si contact electrode Al102; Etch the inner side of this anti-reflection layer 106 until this P type Si105 upper surface forms step, on this step, prepare P type Si contact electrode 108; This anti-reflection layer 106 after being etched, this N-shaped Si contact electrode Al102 and this P type Si contact electrode 108 surface forms passivation layer 107; And the passivation layer 107 that this N-shaped Si contact electrode Al102 and this P type Si contact electrode 108 surface are formed is etched, until expose this N-shaped Si contact electrode Al102 and this P type Si contact electrode 108.
(3) beneficial effect
As can be seen from technique scheme, the present invention has following beneficial effect:
1, non-waveguide near infrared detector based on silicon germanium extension provided by the invention and preparation method thereof, for the detector making 1.6 μm provides a kind of new thinking, major embodiment is both ways: on the one hand when growing Ge base epitaxial loayer in Si substrate, photon crystal structure can discharge the stress that Si and Ge lattice mismatch produces effectively, and then obtains the Ge base epitaxial film of better quality; The light of script directive substrate all according to the requirement of near infrared light wave band independently free adjustment, to realize non-fully forbidden photon band or complete forbidden photon band, thus can limit and the Ge base epitaxial thin-film layer that is coupled back by the structural parameters of photonic crystal on the other hand.
2, non-waveguide near infrared detector based on silicon germanium extension provided by the invention and preparation method thereof, can realize complete forbidden photon band effect to certain specific wavelength, and significantly improves Ge base epitaxial film quality.
3, non-waveguide near infrared detector based on silicon germanium extension provided by the invention and preparation method thereof, photon crystal structure parameter can carry out design independently and adjustment according to the dielectric constant of backing material and certain wavelength.
Accompanying drawing explanation
Fig. 1 is the structural representation of the non-waveguide near infrared detector based on silicon germanium extension provided by the invention;
Fig. 2 is the schematic diagram of the non-waveguide near infrared detector hollow porous photonic crystal base structure based on silicon germanium extension provided by the invention;
Fig. 3 is the schematic diagram of the non-waveguide near infrared detector medium column type photonic crystal base structure based on silicon germanium extension provided by the invention;
Fig. 4 is the process chart of preparation provided by the invention based on the non-waveguide near infrared detector of silicon germanium extension.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The present invention is mainly subject to the restriction of critical thickness and quantum limitation effect in order to solve existing Si/Ge detector, be difficult to the key issues such as the detector of making 1.6 μm, and provide a kind of can significantly improve Ge base epitaxial film quality there is near infrared detector of photon crystal structure structure and preparation method thereof, wherein, the structural parameters of photonic crystal can independent regulation, can be applied to various types of backing material and corresponding wave band.
As shown in Figure 1, Fig. 1 is the structural representation of the non-waveguide near infrared detector based on silicon germanium extension provided by the invention, and this non-waveguide near infrared detector comprises: N-shaped Si substrate 101; The SiO of deposition on this N-shaped Si substrate 101
2the air pass of preparation in layer or medium column type photon crystal 1 03; The Ge base epitaxial film 104 that this photon crystal 1 03 is formed; The P type Si105 that this Ge base epitaxial film 104 is formed; The anti-reflection layer 106 that this P type Si105 is formed; In the outside of this anti-reflection layer 106 of etching until N-shaped Si contact electrode Al102 prepared by the step formed in this N-shaped Si substrate 101; In the inner side of this anti-reflection layer 106 of etching until this P type Si105 upper surface and P type Si contact electrode 108 prepared by the step that formed; And the passivation layer 107 that this anti-reflection layer 106 after being etched is formed.
Wherein, described air pass or medium column type photon crystal 1 03 are the structure of periodic arrangement in space by the dielectric material of two or more dielectric constant, its lattice types is tetragonal, triangular crystal lattice, honeycomb lattice or photonic quasicrystal, its periodic regime is 200-800nm, and etching depth is 50-1000nm.
Described photonic quasicrystal is any one in five heavy symmetries, eightfold symmetry, ten heavy symmetries and ten Double Symmetries, four kinds of symmetrical structures.In described air pass or medium column type photon crystal 1 03, the shape of dielectric posts or airport is any one in taper, cylindricality, pyramid, prismatic table shape or hemisphere.
Described air pass or medium column type photon crystal 1 03, if it is empty porous photonic crystal, then lattice period scope is 200-800nm, and the diameter of airport is 200-800nm, and the height of airport is 50-1000nm; If medium column type photonic crystal, then lattice period scope is 200-800n, the diameter of dielectric posts is 200-800nm, the height of dielectric posts is 800-2000nm, wherein dielectric posts is made up of two parts: be highly 200-1000nm, wherein the cylindrical height of end portion is 0-1000nm, and the height of the cone of upper part is 0-800nm.
In the present invention, the dielectric material being applicable to prepare photonic crystal in substrate near infrared detector is any one in silicon dioxide, carborundum, titanium dioxide.Photon crystal structure provided by the invention, is not only suitable for non-waveguide photodetector, applicable equally to waveguide photodetector, is also applicable to other optics needing to improve a certain wave band reflectivity.
In the present invention, described N-shaped Si contact electrode Al102 can be generally annular or bar shaped.
When N-shaped Si contact electrode Al102 is annular, the outside of this anti-reflection layer 106 of described etching is until in this N-shaped Si substrate 101, be that edge in this anti-reflection layer 106 surface etches an annulus, until be etched in this N-shaped Si substrate 101, and then form an annular step.When N-shaped Si contact electrode Al102 is annular, described P type Si contact electrode 108 is also annular; The inner side of this anti-reflection layer 106 of described etching, until this P type Si105 upper surface, is etch an annulus in this anti-reflection layer 106 surface near this annular step place, until be etched to this P type Si105 upper surface, and then forms an annular step.
When N-shaped Si contact electrode Al102 is bar shaped, the outside of this anti-reflection layer 106 of described etching is until in this N-shaped Si substrate 101, be respectively etch in the both sides on this anti-reflection layer 106 surface one rectangular, until be etched in this N-shaped Si substrate 101, so formed two bar shaped steps.When N-shaped Si contact electrode Al102 is bar shaped, described P type Si contact electrode 108 is circular or quadrangle; The inner side of this anti-reflection layer 106 of described etching is until this P type Si105 upper surface, on the center line of these two bar shaped steps, etch a circle or quadrangle near these two bar shaped step places respectively in this anti-reflection layer 106 surface, until be etched to this P type Si105 upper surface, and then form two circles or quadrangle step.
The invention provides one and can realize complete forbidden photon band effect to certain specific wavelength, and significantly improve Ge base epitaxial film quality there is near infrared detector of photon crystal structure structure and preparation method thereof.Wherein, Fig. 2 is the schematic diagram of the non-waveguide near infrared detector hollow porous photonic crystal base structure based on silicon germanium extension provided by the invention, comprises Si substrate 201 and air pass SiO
2photonic crystal arrays 202; Fig. 3 is the schematic diagram of the non-waveguide near infrared detector medium column type photonic crystal base structure based on silicon germanium extension provided by the invention, comprises Si substrate 301 and medium column type SiO
2photonic crystal arrays 302.
Based on the non-waveguide near infrared detector based on silicon germanium extension shown in Fig. 1, Fig. 4 shows preparation method's flow chart of the non-waveguide near infrared detector based on silicon germanium extension provided by the invention, and the method comprises the following steps:
Step 401: select N-shaped Si substrate 101;
Step 402: deposit SiO on this N-shaped Si substrate 101
2layer, at this SiO
2air pass or medium column type photon crystal 1 03 is prepared in layer;
Step 403: form Ge base epitaxial film 104 on this photon crystal 1 03;
Step 404: form P type Si105 on this Ge base epitaxial film 104;
Step 405: form anti-reflection layer 106 on this P type Si105;
Step 406: etch the outside of this anti-reflection layer 106 until form step in this N-shaped Si substrate 101, prepare N-shaped Si contact electrode Al102 on this step;
Step 407: etch the inner side of this anti-reflection layer 106 until this P type Si105 upper surface forms step, prepare P type Si contact electrode 108 on this step;
Step 408: this anti-reflection layer 106 after being etched, this N-shaped Si contact electrode Al102 and this P type Si contact electrode 108 surface forms passivation layer 107; And
Step 409: the passivation layer 107 that this N-shaped Si contact electrode Al102 and this P type Si contact electrode 108 surface are formed is etched, until expose this N-shaped Si contact electrode Al102 and this P type Si contact electrode 108.
Wherein, describedly on N-shaped Si substrate 101, SiO is deposited
2in the step of layer, this SiO
2layer is formed on this N-shaped Si substrate 101 by plasma enhanced chemical vapor deposition method (PlasmaEnhancedChemicalVaporDeposition, PECVD) deposition, described SiO
2the growth thickness of layer is 50-1000nm.Described at SiO
2prepare in the step of air pass or medium column type photon crystal 1 03 in layer, this air pass or medium column type photon crystal 1 03 are formed at this SiO by inductively coupled plasma (InductivelyCoupledPlasma, ICP) selectivity dry etching
2in layer.Describedly formed in the step of Ge base epitaxial film 104 on photon crystal 1 03, described Ge base epitaxial film 104 is formed on this photon crystal 1 03 by ultra-high vacuum CVD (UltrahighVacuumChemicalVaporDeposition, UHVCVD).Describedly formed in the step of P type Si105 on Ge base epitaxial film 104, described P type Si105 is formed on this Ge base epitaxial film 104 by ultra-high vacuum CVD.Describedly formed in the step of anti-reflection layer 106 on P type Si105, described anti-reflection layer 106 is formed on this P type Si105 by PECVD or ald (AtomicLayerDeposition, ALD).This anti-reflection layer 106 after being etched, this N-shaped Si contact electrode Al102 and this P type Si contact electrode 108 surface is formed in the step of passivation layer 107, and described passivation layer 107 is formed by PECVD or ald.
Described N-shaped Si contact electrode Al102 can be annular or bar shaped.
When N-shaped Si contact electrode Al102 is annular, the outside of this anti-reflection layer 106 of described etching is until form step in this N-shaped Si substrate 101, be that edge in this anti-reflection layer 106 surface etches an annulus, until be etched in this N-shaped Si substrate 101, and then form an annular step.When N-shaped Si contact electrode Al102 is annular, described P type Si contact electrode 108 is also annular; The inner side of this anti-reflection layer 106 of described etching, until this P type Si105 upper surface forms step, is etch an annulus in this anti-reflection layer 106 surface near this annular step place, until be etched to this P type Si105 upper surface, and then forms an annular step.
When N-shaped Si contact electrode Al102 is bar shaped, the outside of this anti-reflection layer 106 of described etching is until in this N-shaped Si substrate 101, be respectively etch in the both sides on this anti-reflection layer 106 surface one rectangular, until be etched in this N-shaped Si substrate 101, so formed two bar shaped steps.When N-shaped Si contact electrode Al102 is bar shaped, described P type Si contact electrode 108 is circular or quadrangle; The inner side of this anti-reflection layer 106 of described etching is until this P type Si105 upper surface forms step, on the center line of these two bar shaped steps, etch a circle or quadrangle near these two bar shaped step places respectively in this anti-reflection layer 106 surface, until be etched to this P type Si105 upper surface, and then form two circles or quadrangle step.
The present invention can form a kind of photon crystal structure that is novel, that have complete forbidden band in Ge base epitaxial loayer bottom, and then is applied in the design of near infrared detector substrate.Its advantage is: when (1) grows Ge base epitaxial loayer in Si substrate, and photon crystal structure can discharge the stress that Si and Ge lattice mismatch produces effectively, and then obtains the Ge base epitaxial film of better quality; (2) no matter be air pass photonic crystal, or the photon crystal structure of medium column type, equal can according to the requirement of near infrared light wave band independently free adjustment, to realize non-fully forbidden band or forbidden band completely, thus the light of script directive substrate is limited and the Ge base epitaxial thin-film layer that is coupled back.Photon crystal structure of the present invention is not only applicable to prepare near infrared detector on GaAs or silicon substrate, is also applicable to other opto-electronic devices that preparation needs to improve a certain wave band reflectivity.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1., based on a non-waveguide near infrared detector for silicon germanium extension, it is characterized in that, comprising:
N-shaped Si substrate (101);
In the SiO of the upper deposition of this N-shaped Si substrate (101)
2the air pass of preparation in layer or medium column type photonic crystal (103);
At the upper Ge base epitaxial film (104) formed of this photonic crystal (103);
At the upper P type Si (105) formed of this Ge base epitaxial film (104);
At the upper anti-reflection layer (106) formed of this P type Si (105);
In the outside of this anti-reflection layer of etching (106) until N-shaped Si contact electrode Al (102) prepared by the step formed in this N-shaped Si substrate (101);
In the inner side of this anti-reflection layer of etching (106) until this P type Si (105) upper surface and P type Si contact electrode (108) prepared by the step that formed; And
The upper passivation layer (107) formed of this anti-reflection layer (106) after being etched;
Wherein, described air pass or medium column type photonic crystal (103) are the structure of periodic arrangement in space by the dielectric material of two or more dielectric constant, its lattice types is tetragonal, triangular crystal lattice, honeycomb lattice or photonic quasicrystal, its periodic regime is 200 ~ 800nm, and etching depth is 50 ~ 1000nm.
2. the non-waveguide near infrared detector based on silicon germanium extension according to claim 1, is characterized in that, described photonic quasicrystal is any one in five heavy symmetries, eightfold symmetry, ten heavy symmetries and ten Double Symmetries, four kinds of symmetrical structures.
3. the non-waveguide near infrared detector based on silicon germanium extension according to claim 1, it is characterized in that, in described air pass or medium column type photonic crystal (103), the shape of dielectric posts or airport is any one in taper, cylindricality, pyramid, prismatic table shape or hemisphere.
4. the non-waveguide near infrared detector based on silicon germanium extension according to claim 1, it is characterized in that, described air pass or medium column type photonic crystal (103), porous photonic crystal if it is empty, then lattice period scope is 200-800nm, the diameter of airport is 200-800nm, and the height of airport is 50-1000nm; If medium column type photonic crystal, then lattice period scope is 200-800n, the diameter of dielectric posts is 200-800nm, the height of dielectric posts is 800-2000nm, dielectric posts is made up of two parts, wherein the cylindrical height of end portion is 0-1000nm, and the height of the cone of upper part is 0-800nm.
5. the non-waveguide near infrared detector based on silicon germanium extension according to claim 1, is characterized in that, described N-shaped Si contact electrode Al (102) is annular or bar shaped.
6. the non-waveguide near infrared detector based on silicon germanium extension according to claim 5, it is characterized in that, when described N-shaped Si contact electrode Al (102) is for annular, the outside of this anti-reflection layer of described etching (106) is until in this N-shaped Si substrate (101), etch an annulus in the edge that this anti-reflection layer (106) is surperficial, until be etched in this N-shaped Si substrate (101), and then form an annular step.
7. the non-waveguide near infrared detector based on silicon germanium extension according to claim 6, is characterized in that, when described N-shaped Si contact electrode Al (102) is for annular, described P type Si contact electrode (108) is also annular;
The inner side of this anti-reflection layer of described etching (106) is until this P type Si (105) upper surface, etch an annulus in this anti-reflection layer (106) surface near this annular step place, until be etched to this P type Si (105) upper surface, and then form an annular step.
8. the non-waveguide near infrared detector based on silicon germanium extension according to claim 5, it is characterized in that, when described N-shaped Si contact electrode Al (102) is for bar shaped, the outside of this anti-reflection layer of described etching (106) is until in this N-shaped Si substrate (101), be in this anti-reflection layer (106) surface both sides respectively etch one rectangular, until be etched in this N-shaped Si substrate (101), and then form two bar shaped steps.
9. the non-waveguide near infrared detector based on silicon germanium extension according to claim 8, is characterized in that, when described N-shaped Si contact electrode Al (102) is for bar shaped, described P type Si contact electrode (108) is circular or quadrangle;
The inner side of this anti-reflection layer of described etching (106) is until this P type Si (105) upper surface, near this two bar shaped step places and etch a circle or quadrangle respectively on the center line of these two bar shaped steps in this anti-reflection layer (106) surface, until be etched to this P type Si (105) upper surface, and then form two circles or quadrangle step.
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| CN105070779A (en) * | 2015-07-07 | 2015-11-18 | 中国科学院半导体研究所 | Surface incident silicon-based germanium photoelectric detector with sub-wavelength grating structure, and preparation method thereof |
| EP3188260B1 (en) * | 2015-12-31 | 2020-02-12 | Dow Global Technologies Llc | Nanostructure material structures and methods |
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