CN102583215A - Suspension nano photonic device based on silicon substrate nitride and preparation method for same - Google Patents
Suspension nano photonic device based on silicon substrate nitride and preparation method for same Download PDFInfo
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Abstract
The invention discloses a suspension nano photonic device based on a silicon substrate nitride and a preparation method for the same, which are capable of implementing an III-nitride wafer with a silicon substrate serving as a carrier. The device comprises a silicon substrate layer and a top nitride device layer arranged on the silicon substrate layer, wherein the silicon substrate layer is provided with a rectangular hollow cavity penetrating through the lower surface of the top nitride device layer, and the top nitride device layer is provided with a periodical nitride nano structure. By the aid of the suspension nano photonic device based on the silicon substrate nitride and the preparation method for the device, light absorption of the silicon substrate can be eliminated, interior optical loss of a thick film nitride material is reduced, light-emitting suppression due to high refraction rate differences of the surface of the device is improved, and light-emitting efficiency is further improved.
Description
Technical field
The present invention relates to a kind ofly, belong to information material and device technology field based on unsettled nano-photon device of silicon substrate nitride and preparation method thereof.
Background technology
In recent years, remedy lattice mismatch and the inconsistent residual stress that causes of thermal expansion through introducing AlN/AlGaN or other exclusive cushion, increasingly mature based on the high-quality nitride material of silicon substrate, progressively moved towards market.Simultaneously, the continuous breakthrough of nitride material process technology, this material system can combine with the silicon process technology of present maturation.Preparation GaN LED device on silicon substrate material, epitaxial growth and LED device fabrication cost reduce significantly.Simultaneously; Based on the nitride material of silicon substrate, utilize ripe silicon etching process technology, carry out silicon substrate and peel off; Can prepare unsettled nitride film photonic device; Thereby eliminate the light absorption of silicon substrate to the nitride exciting light, improve the luminous efficiency of device, developing can be on a large scale, the nitride photoelectric device of low-cost preparation novelty.
Summary of the invention
Technical problem to be solved by this invention provides a kind ofly can eliminate the silicon substrate light absorption; Reduce the interior lights loss of thick film nitride material; Improve the luminous inhibition that device surface high index of refraction difference causes, and further improve luminous efficiency based on unsettled nano-photon device of silicon substrate nitride and preparation method thereof.
The present invention adopts following technical scheme for solving the problems of the technologies described above: the present invention has designed a kind of unsettled nano-photon device based on the silicon substrate nitride; Realize that carrier is a silicon substrate III group-III nitride wafer; Comprise layer-of-substrate silicon; And be arranged on the top layer nitride device layer on the layer-of-substrate silicon, wherein:
Said layer-of-substrate silicon has a cuboid cavity that is through to said top layer nitride device layer lower surface;
Said top layer nitride device layer has periodically nitrogenize thing nanostructured.
As a kind of optimizing structure of the present invention: the lower surface that said top layer nitride device layer is positioned at the overhanging portion on said cavity top has the layer of metal reflectance coating.
As a kind of optimization method of the present invention: the material of said metallic reflective coating is a silver (Ag).
The present invention has also designed a kind of based on the unsettled nano-photon preparation of devices of silicon substrate nitride method; Select silicon substrate III group-III nitride wafer for realizing carrier; Comprise layer-of-substrate silicon, and be arranged on the top layer nitride device layer on the layer-of-substrate silicon, comprise the steps:
Step (1): at the upper surface of the top layer nitride device layer of said III family silicon substrate nitride wafers and each spin coating one deck photoresist of lower surface of layer-of-substrate silicon;
Step (2): adopt dark silicon etching technology that said layer-of-substrate silicon is run through the lower surface that is etched to said top layer nitride device layer, form the cavity of a cuboid;
Step (3): adopt the method for oxygen plasma ashing to remove remaining photoresist;
Step (4): adopt the nitride etch technology, the overhanging portion of the top layer nitride device layer that is positioned at said cavity top is carried out the behind attenuate;
Step (5): adopt self-assembling technique to form the etch mask layer at the upper surface of said top layer nitride device layer;
Step (6): adopt nitride etch technology delimiting period property nitride nano structure on said top layer nitride device layer;
Step (7): adopt BHF or Vapor HF technology to remove the etch mask layer residual particles of top layer nitride device layer upper surface.
As a kind of optimization method of the present invention: also comprise following processing:
Step (8): the lower surface deposition layer of metal reflectance coating that is positioned at the overhanging portion on said cavity top at said top layer nitride device layer.
As a kind of optimization method of the present invention: the etch mask layer in the said step (4) is the individual layer silica membrane.
As a kind of optimization method of the present invention: the material of said metallic reflective coating is a silver (Ag).
The present invention has also designed a kind of based on the unsettled nano-photon preparation of devices of silicon substrate nitride method; Select silicon substrate III group-III nitride wafer for realizing carrier; Comprise layer-of-substrate silicon, and be arranged on the top layer nitride device layer on the layer-of-substrate silicon, comprise the steps:
Step (1): adopt self-assembling technique to form the etch mask layer at the upper surface of said top layer nitride device layer;
Step (2): adopt nitride etch technology delimiting period property nitride nano structure on said top layer nitride device layer;
Step (3): adopt BHF or Vapor HF technology to remove the etch mask layer residual particles of top layer nitride device layer upper surface;
Step (4): at the upper surface of the top layer nitride device layer of said III family silicon substrate nitride wafers and each spin coating one deck photoresist of lower surface of layer-of-substrate silicon;
Step (5): adopt dark silicon etching technology that said layer-of-substrate silicon is run through the lower surface that is etched to said top layer nitride device layer, form the cavity of a cuboid;
Step (6): adopt the method for oxygen plasma ashing to remove remaining photoresist;
Step (7): adopt the nitride etch technology, the overhanging portion of the top layer nitride device layer that is positioned at said cavity top is carried out the behind attenuate.
As a kind of optimization method of the present invention: comprise following processing:
Step (8): the lower surface deposition layer of metal reflectance coating that is positioned at the overhanging portion on said cavity top at said top layer nitride device layer.
As a kind of optimization method of the present invention: the etch mask layer in the said step (1) is the individual layer silica membrane.
As a kind of optimization method of the present invention: the material of said metallic reflective coating is a silver (Ag).
The present invention adopts above technical scheme compared with prior art, has following technique effect:
1. the present invention removes layer-of-substrate silicon through dark silicon etching, has eliminated the light absorption of layer-of-substrate silicon;
2. the present invention has reduced the interior lights loss of thick film nitride material through carrying out unsettled nitride film attenuate behind;
3. the present invention utilizes self-assembling technique, has formed the nitride etch mask layer of individual layer, thereby has realized large-area nitride periodic nano-structure, has improved the interface state of device surface, has reduced luminous inhibition;
4. the present invention utilizes metallic mirror behind through depositing the layer of metal reflectance coating behind, has further improved the luminous efficiency of device.
5. this device architecture of the present invention and technology of preparing thereof can be applied to the LED device and the micro electronmechanical adjustable unsettled nitride film photonic device of high-luminous-efficiency.
6. periodic nano-structure of the present invention's proposition and preparation method thereof can be as preparation large area anti-reflection optics and high efficiency solar cell device.
Description of drawings
Fig. 1 (a) is the structure diagram based on the unsettled nano-photon device of silicon substrate nitride that the present invention designs.
Fig. 1 (b) is the structure diagram based on the unsettled nano-photon device of silicon substrate nitride with metallic reflective coating that the present invention designs.
Fig. 2 (a) is based on a kind of production process charts of the unsettled nano-photon device of silicon substrate nitride.
Fig. 2 (b) is based on the another kind of production process charts of the unsettled nano-photon device of silicon substrate nitride.
Fig. 3 is an individual layer silica membrane stereoscan photograph.
Fig. 4 is the nitride periodic nano-structure that obtains after the etching.
Fig. 5 is the optical photograph of unsettled nitride photonic devices.
Fig. 6 is based on the silicon substrate nitride and unsettled nitride device luminescent properties compares.
The reflecting properties that Fig. 7 is based on silicon substrate nitride and unsettled nitride photonic devices compares.
The specific embodiment
Below in conjunction with accompanying drawing technical scheme of the present invention is done further detailed description:
As shown in Figure 1, the present invention has designed a kind of unsettled nano-photon device based on the silicon substrate nitride, realizes that carrier is a silicon substrate III group-III nitride wafer, and comprise layer-of-substrate silicon, and be arranged on the top layer nitride device layer on the layer-of-substrate silicon, wherein:
Said layer-of-substrate silicon has a cuboid cavity that is through to said top layer nitride device layer lower surface;
Said top layer nitride device layer has periodically nitrogenize thing nanostructured.
Nitride periodic nano-structure for obtaining after the etching shown in Figure 4.
As a kind of optimization method of the present invention: the lower surface that said top layer nitride device layer is positioned at the overhanging portion on said cavity top has the layer of metal reflectance coating.
As a kind of optimization method of the present invention: the material of said metallic reflective coating is Ag.
Shown in Figure 5 is the optical photograph of unsettled nitride photonic devices.
Shown in Fig. 2 (a): the present invention has also designed a kind of based on the unsettled nano-photon preparation of devices of silicon substrate nitride method; Select silicon substrate III group-III nitride wafer for realizing carrier; Comprise layer-of-substrate silicon, and be arranged on the top layer nitride device layer on the layer-of-substrate silicon, comprise the steps:
Step (1): at the upper surface of the top layer nitride device layer of said III family silicon substrate nitride wafers and each spin coating one deck photoresist of lower surface of layer-of-substrate silicon;
Step (2): adopt dark silicon etching technology that said layer-of-substrate silicon is run through the lower surface that is etched to said top layer nitride device layer, form the cavity of a cuboid;
Step (3): adopt the method for oxygen plasma ashing to remove remaining photoresist;
Step (4): adopt the nitride etch technology, the overhanging portion of the top layer nitride device layer that is positioned at said cavity top is carried out the behind attenuate;
Step (5): adopt self-assembling technique to form the etch mask layer at the upper surface of said top layer nitride device layer;
Step (6): adopt nitride etch technology delimiting period property nitride nano structure on said top layer nitride device layer;
Step (7): adopt BHF or Vapor HF technology to remove the etch mask layer residual particles of top layer nitride device layer upper surface.
As a kind of optimization method of the present invention: also comprise following processing:
Step (8): the lower surface deposition layer of metal reflectance coating that is positioned at the overhanging portion on said cavity top at said top layer nitride device layer.
As a kind of optimization method of the present invention: the etch mask layer in the said step (4) is the individual layer silica membrane.
Shown in Figure 3 is individual layer silica membrane stereoscan photograph.
Shown in Fig. 2 (b); The present invention has also designed a kind of based on the unsettled nano-photon preparation of devices of silicon substrate nitride method; Select silicon substrate III group-III nitride wafer for realizing carrier; Comprise layer-of-substrate silicon, and be arranged on the top layer nitride device layer on the layer-of-substrate silicon, it is characterized in that comprising the steps:
Step (1): adopt self-assembling technique to form the etch mask layer at the upper surface of said top layer nitride device layer;
Step (2): adopt nitride etch technology delimiting period property nitride nano structure on said top layer nitride device layer;
Step (3): adopt BHF or Vapor HF technology to remove the etch mask layer residual particles of top layer nitride device layer upper surface;
Step (4): at the upper surface of the top layer nitride device layer of said III family silicon substrate nitride wafers and each spin coating one deck photoresist of lower surface of layer-of-substrate silicon;
Step (5): adopt dark silicon etching technology that said layer-of-substrate silicon is run through the lower surface that is etched to said top layer nitride device layer, form the cavity of a cuboid;
Step (6): adopt the method for oxygen plasma ashing to remove remaining photoresist;
Step (7): adopt the nitride etch technology, the overhanging portion of the top layer nitride device layer that is positioned at said cavity top is carried out the behind attenuate.
As a kind of optimization method of the present invention: comprise following processing:
Step (8): the lower surface deposition layer of metal reflectance coating that is positioned at the overhanging portion on said cavity top at said top layer nitride device layer.
Shown in Figure 6 is to compare based on silicon substrate nitride and unsettled nitride device luminescent properties.
Shown in Figure 7 is based on the reflecting properties of silicon substrate nitride and unsettled nitride photonic devices relatively.
What the present invention designed can be as realizing the high-efficiency LED device based on unsettled nano-photon device of silicon substrate nitride and technology of preparing thereof; This device architecture and technology of preparing thereof can combine micro electronmechanical Driving technique, realize micro electronmechanical adjustable nitride photonic devices.
Claims (11)
1. the unsettled nano-photon device based on the silicon substrate nitride realizes that carrier is a silicon substrate III group-III nitride wafer, comprises layer-of-substrate silicon, and is arranged on the top layer nitride device layer on the layer-of-substrate silicon, it is characterized in that:
Said layer-of-substrate silicon has a cuboid cavity that is through to said top layer nitride device layer lower surface;
Said top layer nitride device layer has periodically nitrogenize thing nanostructured.
2. the unsettled nano-photon device based on the silicon substrate nitride according to claim 1 is characterized in that: the lower surface that said top layer nitride device layer is positioned at the overhanging portion on said cavity top has the layer of metal reflectance coating.
3. the unsettled nano-photon device based on the silicon substrate nitride according to claim 2 is characterized in that: the material of said metallic reflective coating is silver.
4. unsettled nano-photon preparation of devices method based on the silicon substrate nitride; Select silicon substrate III group-III nitride wafer for realizing carrier; Comprise layer-of-substrate silicon, and be arranged on the top layer nitride device layer on the layer-of-substrate silicon, it is characterized in that comprising the steps:
Step (1): at the upper surface of the top layer nitride device layer of said III family silicon substrate nitride wafers and each spin coating one deck photoresist of lower surface of layer-of-substrate silicon;
Step (2): adopt dark silicon etching technology that said layer-of-substrate silicon is run through the lower surface that is etched to said top layer nitride device layer, form the cavity of a cuboid;
Step (3): adopt the method for oxygen plasma ashing to remove remaining photoresist;
Step (4): adopt the nitride etch technology, the overhanging portion of the top layer nitride device layer that is positioned at said cavity top is carried out the behind attenuate;
Step (5): adopt self-assembling technique to form the etch mask layer at the upper surface of said top layer nitride device layer;
Step (6): adopt nitride etch technology delimiting period property nitride nano structure on said top layer nitride device layer;
Step (7): adopt BHF or Vapor HF technology to remove the etch mask layer residual particles of top layer nitride device layer upper surface.
5. the unsettled nano-photon preparation of devices of the nitride based on silicon substrate according to claim 4 method is characterized in that also comprising following processing:
Step (8): the lower surface deposition layer of metal reflectance coating that is positioned at the overhanging portion on said cavity top at said top layer nitride device layer.
6. the unsettled nano-photon preparation of devices method based on the silicon substrate nitride according to claim 4 is characterized in that the etch mask layer in the said step (4) is the individual layer silica membrane.
7. the unsettled nano-photon preparation of devices method based on the silicon substrate nitride according to claim 5 is characterized in that: the material of said metallic reflective coating is silver.
8. unsettled nano-photon preparation of devices method based on the silicon substrate nitride; Select silicon substrate III group-III nitride wafer for realizing carrier; Comprise layer-of-substrate silicon, and be arranged on the top layer nitride device layer on the layer-of-substrate silicon, it is characterized in that comprising the steps:
Step (1): adopt self-assembling technique to form the etch mask layer at the upper surface of said top layer nitride device layer;
Step (2): adopt nitride etch technology delimiting period property nitride nano structure on said top layer nitride device layer;
Step (3): adopt BHF or Vapor HF technology to remove the etch mask layer residual particles of top layer nitride device layer upper surface;
Step (4): at the upper surface of the top layer nitride device layer of said III family silicon substrate nitride wafers and each spin coating one deck photoresist of lower surface of layer-of-substrate silicon;
Step (5): adopt dark silicon etching technology that said layer-of-substrate silicon is run through the lower surface that is etched to said top layer nitride device layer, form the cavity of a cuboid;
Step (6): adopt the method for oxygen plasma ashing to remove remaining photoresist;
Step (7): adopt the nitride etch technology, the overhanging portion of the top layer nitride device layer that is positioned at said cavity top is carried out the behind attenuate.
9. the unsettled nano-photon preparation of devices method based on the silicon substrate nitride according to claim 8 is characterized in that also comprising following processing:
Step (8): the lower surface deposition layer of metal reflectance coating that is positioned at the overhanging portion on said cavity top at said top layer nitride device layer.
10. the unsettled nano-photon preparation of devices method based on the silicon substrate nitride according to claim 8 is characterized in that the etch mask layer in the said step (1) is the individual layer silica membrane.
11. the unsettled nano-photon preparation of devices method based on the silicon substrate nitride according to claim 8 is characterized in that: the material of said metallic reflective coating is silver.
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| CN103630966A (en) * | 2013-03-29 | 2014-03-12 | 南京邮电大学 | Hanging nitride optical waveguide device and method for preparing same |
| CN103633203A (en) * | 2013-05-08 | 2014-03-12 | 南京邮电大学 | Hanging nitride film LED device and method for preparing same |
| CN103779452A (en) * | 2014-01-21 | 2014-05-07 | 南京邮电大学 | Suspended nitride film LED device and manufacturing method |
| CN104009393A (en) * | 2014-04-30 | 2014-08-27 | 南京邮电大学 | Electric pump gallium nitride micro laser capable of achieving single-direction emission and preparation method thereof |
| CN105633194A (en) * | 2016-03-09 | 2016-06-01 | 南京邮电大学 | Hung p-n junction quantum well-based photoinduced transistor and preparation method thereof |
| CN105841725A (en) * | 2016-03-26 | 2016-08-10 | 南京邮电大学 | Visible light single-chip integrated sensor based on grating coupling and manufacturing method of visible light single-chip integrated sensor |
| CN103972789B (en) * | 2014-04-04 | 2017-01-11 | 南京邮电大学 | Nitride asymmetric whispering gallery mode optical microcavity device and preparation method thereof |
| CN106952985A (en) * | 2015-10-27 | 2017-07-14 | 株式会社迪思科 | The forming method of LED-baseplate |
| CN109888611A (en) * | 2019-03-18 | 2019-06-14 | 南京邮电大学 | A kind of nitride micro laser of electric drive nano beam structure and preparation method thereof |
| US20210072459A1 (en) * | 2018-03-21 | 2021-03-11 | Ecole Polytechnique Federale De Lausanne (Epfl) | Optical coupling device |
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| CN103633203A (en) * | 2013-05-08 | 2014-03-12 | 南京邮电大学 | Hanging nitride film LED device and method for preparing same |
| CN103633203B (en) * | 2013-05-08 | 2016-12-28 | 南京邮电大学 | Unsettled nitride film LED component and preparation method thereof |
| CN103779452A (en) * | 2014-01-21 | 2014-05-07 | 南京邮电大学 | Suspended nitride film LED device and manufacturing method |
| CN103779452B (en) * | 2014-01-21 | 2016-10-05 | 南京邮电大学 | Unsettled nitride film LED component and preparation method |
| CN103972789B (en) * | 2014-04-04 | 2017-01-11 | 南京邮电大学 | Nitride asymmetric whispering gallery mode optical microcavity device and preparation method thereof |
| CN104009393A (en) * | 2014-04-30 | 2014-08-27 | 南京邮电大学 | Electric pump gallium nitride micro laser capable of achieving single-direction emission and preparation method thereof |
| CN106952985A (en) * | 2015-10-27 | 2017-07-14 | 株式会社迪思科 | The forming method of LED-baseplate |
| CN106952985B (en) * | 2015-10-27 | 2021-03-26 | 株式会社迪思科 | Method for forming LED substrate |
| CN105633194A (en) * | 2016-03-09 | 2016-06-01 | 南京邮电大学 | Hung p-n junction quantum well-based photoinduced transistor and preparation method thereof |
| CN105633194B (en) * | 2016-03-09 | 2017-12-29 | 南京邮电大学 | Photic transistor based on hanging p n knot SQWs and preparation method thereof |
| CN105841725B (en) * | 2016-03-26 | 2018-06-01 | 南京邮电大学 | Based on grating coupled visible ray monolithic integrated sensor and preparation method thereof |
| CN105841725A (en) * | 2016-03-26 | 2016-08-10 | 南京邮电大学 | Visible light single-chip integrated sensor based on grating coupling and manufacturing method of visible light single-chip integrated sensor |
| US20210072459A1 (en) * | 2018-03-21 | 2021-03-11 | Ecole Polytechnique Federale De Lausanne (Epfl) | Optical coupling device |
| US11714232B2 (en) * | 2018-03-21 | 2023-08-01 | Ecole polytechnique fédérale de Lausanne (EPFL) | Optical coupling device |
| CN109888611A (en) * | 2019-03-18 | 2019-06-14 | 南京邮电大学 | A kind of nitride micro laser of electric drive nano beam structure and preparation method thereof |
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Application publication date: 20120718 |