CN104051583A - Preparation method of patterned substrate for improving epitaxial quality - Google Patents
Preparation method of patterned substrate for improving epitaxial quality Download PDFInfo
- Publication number
- CN104051583A CN104051583A CN201410267085.XA CN201410267085A CN104051583A CN 104051583 A CN104051583 A CN 104051583A CN 201410267085 A CN201410267085 A CN 201410267085A CN 104051583 A CN104051583 A CN 104051583A
- Authority
- CN
- China
- Prior art keywords
- film
- aln
- gan
- layer
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 26
- 238000001039 wet etching Methods 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000000872 buffer Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 3
- 238000001534 heteroepitaxy Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000010409 thin film Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 201000003042 peeling skin syndrome Diseases 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a preparation method of a patterned substrate for improving epitaxial quality. The method mainly comprises the following steps that (1) a layer of AlN thin film is deposited on the surface of a polished Al2O3 substrate by means of magnetron sputtering to serve as a seed crystal layer for later GaN growth; (2) a layer of SiO2 thin film is grown on the AlN thin film layer by the adoption of a PECVD technology; (3) photo-etching is conducted to obtain a column-type photo-resist mask; (4) wet etching is conducted on the SiO2 thin film to form a pattern array until the etched part is exposed out of the AlN surface; (5) photo-resist is stripped and finally, an Al2O3 substrate with the SiO2 pattern array is obtained on the AlN seed crystal layer; (6) after sample wafer is cleaned, a GaN epitaxial layer is grown directly. Thus, on one hand, GaN can grow transversely through a heteroepitaxy, and on the other hand, a good epitaxial foundation is provided for growth of the GaN epitaxial layer through the AlN seed crystal layer, therefore, defects are reduced and the quality of epitaxial crystals is improved.
Description
Technical field
The invention belongs to the preparing technical field of LED backing material, relate generally to a kind of preparation method of patterned substrate.
Background technology
GaN semiconductor is because its application in high efficiency solid state lighting has been subject to the extensive concern of industry.GaN normally forms by MOCVD technology growth in foreign substrate.Due to Al
2o
3have larger lattice mismatch with GaN, conventional solution is first at Al
2o
3grown one deck low temperature GaN resilient coating, by continued growth high temperature GaN epitaxial loayer again after high annealing, thereby reduces the not matching degree between lattice.Therefore, Al
2o
3still become the best substrate of current growing GaN.
The GaN crystal mass of low temperature buffer layer has determined the crystal mass of high temperature epitaxy layer subsequently to a great extent; In order to obtain better epitaxial quality, conventionally can pass through wet etching or dry etching means at Al
2o
3substrate surface is prepared micron order or nano level 3-D graphic array, thereby improves epitaxial loayer crystal mass, improves light extraction efficiency, this graphical Al simultaneously
2o
3substrate has been widely used in GaN base LED and has produced.As shown in Figure 1, traditional graphical Al
2o
3substrate preparation flow, adopts the techniques such as even glue, exposure, development and ICP, can prepare the graphical Al with given shape, size
2o
3substrate.
But, still there is all challenges in preparation PSS stage and growing epitaxial stage: due to Al
2o
3material hardness is high, and chemical stability is good, no matter be therefore wet etching or dry etching, graphical process is all very difficult; In addition, GaN extension ratio on PSS substrate is more difficult in smooth substrates superficial growth, and initial low temperature GaN resilient coating only can be in the planar section growth of PSS substrate, but not whole surface, grown after GaN resilient coating and also needed a step high-temperature annealing process could eliminate dislocation, therefore epitaxial growth window is very narrow.
The present invention is directed to above problem and propose a kind of New Graphics substrate preparation process: at the long Al that has AlN inculating crystal layer
2o
3on substrate, prepare patterned Si0
2.This technology can significantly be simplified dry etching and prepare graphical Al
2o
3substrate, provides wider epitaxial growth window, and rework operation is simple, cost is low, has met the needs of current large-scale production.
Summary of the invention
The present invention proposes a kind of length has AlN inculating crystal layer to form graphical Si0
2substrat structure and preparation method thereof, while making GaN growth by heteroepitaxy on the one hand, produce cross growth, provide good of heap of stone brilliant basis by AlN inculating crystal layer for GaN epitaxial growth on the other hand, thereby reduce defect, improve epitaxial crystal quality.
The preparation method of this patterned substrate, mainly comprises the following steps:
1) Al after polishing
2o
3substrate surface uses magnetron sputtering means deposition one deck AlN film, as the inculating crystal layer of follow-up GaN growth;
2) on AlN thin layer, adopt PECVD technology growth one deck Si0
2film;
3) at Si0
2on film, spin coating one deck positive photoresist (PR), exposes to it by stepper, obtains column type photoresist mask after development;
4) to Si0
2film carries out wet etching, and corrosion rate is controlled between 200-300nm/min, Si0
2the film formation graphic array that is corroded under the protection of photoresist mask, until corrosion location exposes AlN top layer;
5) divest photoresist, finally obtain thering is Si0 on AlN inculating crystal layer
2the Al of graphic array
2o
3substrate;
6) direct growth GaN epitaxial loayer after cleaning print.
Based on such scheme, the present invention also further does following optimization and limits and improve:
Step 1) thickness of depositing Al N film is 20-100nm, step 2) growth Si0
2the thickness of film is 1.0-2.0 μ m.
Step 2) thickness of spin coating positive photoresist is 1.5-3.0 μ m; After development, obtain column type photoresist mask, footpath, the end is 1.0-5.0 μ m, and figure spacing is 0.3-2.0 μ m.
Step 4) to carry out the main component with buffer oxide etching liquid (BOE) that wet etching adopts be HF and NH
4f, both proportionings (volume ratio) HF:NH
4f=1:6.
Step 5) to divest the stripper that photoresist adopts be sulfuric acid, hydrogen peroxide mixed solution (SPM), both proportionings (volume ratio) H
2sO
4(mass fraction concentration 98%): H
2o
2(mass fraction concentration 30%) is 3:1-4:1.
This graphical Al of the present invention
2o
3substrat structure, is characterized in: at Al
2o
3substrate surface is coated with one deck AlN film, as the inculating crystal layer of follow-up GaN growth; The graphical Si0 that grows and form through wet etching in described seed crystal surface
2array.
The thickness of above-mentioned AlN film is 20-100nm, Si0
2the thickness of film is 1.0-2.0 μ m; Described graphical Si0
2the surface of film is graphic array, and at the bottom of figure, footpath is 1.0-5.0 μ m, and graphic element spacing is 0.3-2.0 μ m.
Further optimize, the thickness of above-mentioned AlN film is 30nm, Si0
2the thickness of film is 1.5 μ m; At the bottom of figure, footpath is 2 μ m, and graphic element spacing is 1 μ m.
The present invention can make the crystal mass of GaN material increase substantially, and growth window increases.Use the present invention to prepare graphical SiO
2substrate growing GaN extension, (102) (002) crystal face halfwidth all can be reduced to below 300arcses, and the smooth zero defect of epi-layer surface.Specifically there is following beneficial effect:
1. obtain graphical Si0
2than obtaining, graphic sapphire operation is easier, can be cost-saving.
2. can freely adjust graphical Si0 according to the pattern of photoresist mask
2pattern, easy and simple to handle.
3. in epitaxial process, due to Si0
2larger with GaN lattice mismatch, therefore GaN only can grow on exposed AlN inculating crystal layer, and the unmatched Si0 of lattice
2hinder GaN in its superficial growth, when extension continues, the GaN meeting cross growth on AlN seed crystal is by Si0
2figure overrides.This structure has increased the probability of horizontal extension, finally obtains a smooth epitaxial surface, has improved epitaxial crystal quality, has expanded growth window.
4. due to Al
2o
3hardness is high, stable chemical nature, therefore the graphical Al of traditional scheme
2o
3substrate do over again difficulty in process and cost higher, and the graphical Si0 of the present invention
2just can do over again with BOE solution corrosion, simple to operate, cost is low.
Brief description of the drawings
Fig. 1 is traditional graph Al
2o
3substrate preparation flow figure.
Fig. 2 is the flow chart of one embodiment of the present of invention.
Embodiment
Further the present invention is elaborated below in conjunction with Fig. 2 and a specific embodiment.
First, the Al after polishing
2o
3substrate surface uses the AlN film that magnetron sputtering means deposition a layer thickness is 30nm, and this layer of AlN film can be used as the inculating crystal layer of follow-up GaN growth.
Then, on AlN thin layer, adopting PECVD technology growth a layer thickness is the Si0 of 1.5 μ m
2film, controls Si0 by controlling sedimentation time
2the thickness of film.
Then, then at Si0
2on film, spin coating a layer thickness is the positive photoresist of 2.15 μ m, by stepper, its exposure (is adopted to 5 cun of chromium plates of 6mm*6mm, exposure energy: 160ms, focal length: 0.5), (at the bottom of figure, footpath is 2 μ m after development, to obtain column type photoresist mask, figure spacing be 1 μ m), toast 30min at 135 DEG C.
Use again BOE (buffer oxide etching liquid, volume ratio HF:NH
4f=1:6) buffer solution is to Si0
2film carries out wet etching, and corrosion rate is controlled at 200-300nm/min, Si0
2understand the specific graphic array that be corroded out under the protection of photoresist mask, until corrosion location exposes AlN top layer, obtain the Si0 of different size by controlling etching time
2graphic array.
Finally use SPM (sulfuric acid, hydrogen peroxide mixed solution, volume ratio H
2sO
4(98%): H
2o
2(30%)=4:1) divest photoresist, just obtain thering is Si0 on AlN inculating crystal layer
2the Al of graphic array
2o
3substrate.
Can direct growth GaN epitaxial loayer after cleaning print.
Above embodiment has provided the design parameter that can reach best-of-breed technology effect according to actual needs, but the design parameters such as these temperature, thickness, pressure should not be considered as the restriction to the claims in the present invention protection range.In specification, set forth the improved principle of the technology of the present invention, those skilled in the art should recognize that under basic scheme, each design parameter being done to appropriate adjustment still can realize object of the present invention substantially.
Claims (8)
1. for improving the preparation method of patterned substrate for epitaxial quality, mainly comprise the following steps:
1) Al after polishing
2o
3substrate surface uses magnetron sputtering means deposition one deck AlN film, as the inculating crystal layer of follow-up GaN growth;
2) on AlN thin layer, adopt PECVD technology growth one deck Si0
2film;
3) at Si0
2on film, spin coating one deck positive photoresist (PR), exposes to it by stepper, obtains column type photoresist mask after development;
4) to Si0
2film carries out wet etching, and corrosion rate is controlled between 200-300nm/min, Si0
2the film formation graphic array that is corroded under the protection of photoresist mask, until corrosion location exposes AlN top layer;
5) divest photoresist, finally obtain thering is Si0 on AlN inculating crystal layer
2the Al of graphic array
2o
3substrate;
6) direct growth GaN epitaxial loayer after cleaning print.
2. preparation method according to claim 1, is characterized in that: step 1) thickness of depositing Al N film is 20-100nm, step 2) growth Si0
2the thickness of film is 1.0-2.0 μ m.
3. preparation method according to claim 1, is characterized in that: step 2) thickness of spin coating positive photoresist is 1.5-3.0 μ m; After development, obtain column type photoresist mask, footpath, the end is 1.0-5.0 μ m, and figure spacing is 0.3-2.0 μ m.
4. preparation method according to claim 1, is characterized in that: step 4) to carry out the main component with buffer oxide etching liquid (BOE) that wet etching adopts be HF and NH
4f, both proportionings (volume ratio) HF:NH
4f=1:6.
5. preparation method according to claim 1, is characterized in that: step 5) to divest the stripper that photoresist adopts be sulfuric acid, hydrogen peroxide mixed solution (SPM), both proportionings (volume ratio) H
2sO
4(mass fraction concentration 98%): H
2o
2(mass fraction concentration 30%) is 3:1-4:1.
6. a graphical Al
2o
3substrat structure, is characterized in that: at Al
2o
3substrate surface is coated with one deck AlN film, as the inculating crystal layer of follow-up GaN growth; The graphical Si0 that grows and form through wet etching in described seed crystal surface
2array.
7. patterned substrate structure according to claim 6, is characterized in that: the thickness of described AlN film is 20-100nm, Si0
2the thickness of film is 1.0-2.0 μ m; Described graphical Si0
2the surface of film is graphic array, and at the bottom of figure, footpath is 1.0-5.0 μ m, and graphic element spacing is 0.3-2.0 μ m.
8. patterned substrate structure according to claim 7, is characterized in that: the thickness of described AlN film is 30nm, Si0
2the thickness of film is 1.5 μ m; At the bottom of figure, footpath is 2 μ m, and graphic element spacing is 1 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410267085.XA CN104051583A (en) | 2014-06-16 | 2014-06-16 | Preparation method of patterned substrate for improving epitaxial quality |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410267085.XA CN104051583A (en) | 2014-06-16 | 2014-06-16 | Preparation method of patterned substrate for improving epitaxial quality |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104051583A true CN104051583A (en) | 2014-09-17 |
Family
ID=51504193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410267085.XA Pending CN104051583A (en) | 2014-06-16 | 2014-06-16 | Preparation method of patterned substrate for improving epitaxial quality |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104051583A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485406A (en) * | 2014-12-09 | 2015-04-01 | 西安神光安瑞光电科技有限公司 | Method for preparing sapphire pattern substrate |
| CN108269887A (en) * | 2016-12-30 | 2018-07-10 | 北京大学 | A kind of preparation method of the AlN films based on graphical sapphire substrate and pre-sputtering technology |
| CN108878595A (en) * | 2017-05-08 | 2018-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Substrate, semiconductor devices and substrate preparation method |
| CN109713099A (en) * | 2018-12-27 | 2019-05-03 | 湘能华磊光电股份有限公司 | A kind of graphical sapphire substrate structure and its manufacture craft |
| CN112467005A (en) * | 2020-11-18 | 2021-03-09 | 福建中晶科技有限公司 | Preparation method of multi-composite-layer patterned sapphire substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1490844A (en) * | 2002-10-16 | 2004-04-21 | 中国科学院半导体研究所 | Horizontal epitaxial growth of gallium nitride and its compound semiconductor |
| CN1501517A (en) * | 2002-11-14 | 2004-06-02 | 威凯科技股份有限公司 | Method for forming epilayers by transverse epitaxy |
-
2014
- 2014-06-16 CN CN201410267085.XA patent/CN104051583A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1490844A (en) * | 2002-10-16 | 2004-04-21 | 中国科学院半导体研究所 | Horizontal epitaxial growth of gallium nitride and its compound semiconductor |
| CN1501517A (en) * | 2002-11-14 | 2004-06-02 | 威凯科技股份有限公司 | Method for forming epilayers by transverse epitaxy |
Non-Patent Citations (3)
| Title |
|---|
| 张维轩: "以新式磊晶侧向成长法成长高品质氮化镓薄膜之研究", 《交通大学光电系统研究所学位论文》 * |
| 朱军山等: "Si(11 1)衬底上生长的GaN的形貌与AlN缓冲层生长温度的关系", 《半导体学报》 * |
| 薛军帅等: "Comparative study of different properties of GaN films grown on (0001) sapphire using high and low temperature AlN interlayers", 《CHIN.PHYS.B》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485406A (en) * | 2014-12-09 | 2015-04-01 | 西安神光安瑞光电科技有限公司 | Method for preparing sapphire pattern substrate |
| CN108269887A (en) * | 2016-12-30 | 2018-07-10 | 北京大学 | A kind of preparation method of the AlN films based on graphical sapphire substrate and pre-sputtering technology |
| CN108878595A (en) * | 2017-05-08 | 2018-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Substrate, semiconductor devices and substrate preparation method |
| CN108878595B (en) * | 2017-05-08 | 2020-02-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Substrate, semiconductor device and substrate manufacturing method |
| CN109713099A (en) * | 2018-12-27 | 2019-05-03 | 湘能华磊光电股份有限公司 | A kind of graphical sapphire substrate structure and its manufacture craft |
| CN112467005A (en) * | 2020-11-18 | 2021-03-09 | 福建中晶科技有限公司 | Preparation method of multi-composite-layer patterned sapphire substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100587919C (en) | Method for preparing nano-scale pattern substrate for nitride epitaxial growth | |
| CN102184842B (en) | Method for patterning sapphire by combining wet etching and dry etching | |
| TWI464903B (en) | Epitaxial base, method of making the same and application of epitaxial base for growing epitaxial layer | |
| CN103035806B (en) | For the preparation of the method for the nano graph substrate of nitride epitaxial growth | |
| CN104051583A (en) | Preparation method of patterned substrate for improving epitaxial quality | |
| CN102064088B (en) | Method for preparing sapphire-graph substrate by dry method and wet method | |
| CN104332541B (en) | Patterned substrate preparation method and epitaxial wafer preparation method | |
| CN105489714B (en) | A kind of nitride porous aluminium compound substrate and its application in epitaxial growth high-quality gallium nitride film | |
| CN100505165C (en) | A method for preparing the gallium nitride monocrystal substrate | |
| CN110783167B (en) | Preparation method of semiconductor material patterned substrate, material film and device | |
| CN101330002A (en) | Method for preparing graphical sapphire substrate for nitrifier epitaxial growth | |
| CN105226144B (en) | The preparation method of LED patterned substrates with double-deck micro-nano array structure | |
| CN103956418A (en) | Composite patterned substrate and preparation method thereof | |
| CN110246939A (en) | A kind of graphical composite substrate, preparation method and LED epitaxial wafer | |
| CN101814426A (en) | Production method for sapphire pattern substrate | |
| CN102694090A (en) | Manufacturing method for graphical sapphire substrate | |
| CN101807518A (en) | Method for preparing GaN-based pattern substrate template based on anodized aluminum | |
| CN103887166A (en) | Method for preparing oxide substitutional patterned substrate | |
| CN104485406A (en) | Method for preparing sapphire pattern substrate | |
| CN104505444A (en) | Epitaxial growth method for reducing epitaxial layer defect density | |
| CN104134733B (en) | Manufacturing method of patterned substrate used for growing semi-conductor film | |
| CN109599468A (en) | Ultra-wide forbidden band aluminium nitride material epitaxial wafer and preparation method thereof | |
| CN103074676B (en) | A kind of realization has the edge-protected method from peeling off function semiconductor material growing | |
| CN104593727A (en) | Method for preparing nano patterned substrate by utilizing AAO template | |
| CN102856442B (en) | Method for improving uniformity of epitaxial layer of sapphire substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140917 |
|
| RJ01 | Rejection of invention patent application after publication |