CN103681898A - Ultraviolet band-pass filter based on SiO2/Si3N4 distributed Bragg reflectors and preparing method - Google Patents
Ultraviolet band-pass filter based on SiO2/Si3N4 distributed Bragg reflectors and preparing method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 3
- 229910052681 coesite Inorganic materials 0.000 title abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 title abstract 3
- 239000000377 silicon dioxide Substances 0.000 title abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 title abstract 3
- 229910052682 stishovite Inorganic materials 0.000 title abstract 3
- 229910052905 tridymite Inorganic materials 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 17
- 239000010980 sapphire Substances 0.000 claims abstract description 17
- 238000000985 reflectance spectrum Methods 0.000 claims abstract description 9
- 230000012010 growth Effects 0.000 claims description 44
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 32
- 238000002360 preparation method Methods 0.000 claims description 29
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 21
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 12
- 238000000825 ultraviolet detection Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000001272 nitrous oxide Substances 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000011514 reflex Effects 0.000 claims description 3
- 230000026267 regulation of growth Effects 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000638 solvent extraction Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 238000013461 design Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
- G02B5/3041—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid comprising multiple thin layers, e.g. multilayer stacks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention discloses an ultraviolet band-pass filter based on SiO2/Si3N4 distributed Bragg reflectors. A sapphire (001) substrate or an aluminum nitride substrate or an AlGaN substrate is selected and used, and the surface of the substrate is a smooth face; the two distributed Bragg reflectors, namely a bottom reflector and a top reflector which are stacked front and back are prepared on a surface with an ultraviolet detecting device or the substrate in a growing mode, the two reflectors are separated by a middle partitioning layer, and the ultraviolet band-pass filter is formed; the distributed Bragg bottom reflector is grown, so that a long-wave-band right forbidden band in a band-pass filter reflectance spectrum is formed, the distributed Bragg top reflector is grown on the bottom reflector continuously, a short-wave-band left forbidden band in the band-pass filter reflectance spectrum is formed, a medium thin film SiO2 and one of Si3N4, TiO2 and HfO2 are selected to form a unit structure of each distributed Bragg reflector (DBR), and the cycle numbers of the top reflector and the bottom reflector are 4-20; and the overall thickness range is 1.5-2 microns.
Description
Technical field
The present invention relates to field of optoelectronic devices, particular content refers to and adopts the design of optical delivery matrix method and the ultraviolet band pass filter of PECVD preparation based on dielectric film distributed bragg reflector mirror, especially based on SiO
2/ Si
3n
4the ultraviolet band pass filter of distributed bragg reflector mirror, this filter can effectively improve ultraviolet detector wavelength and select ratio, strengthens detectivity, and low cost realizes wavelength window and selects to survey.
Background technology
UV photodetector is in space communication, and the broad prospect of application in the fields such as missile warning becomes the focus of current technical research
[1].Yet due to traditional Schottky barrier type, p-n junction type type detector still exists the problems such as quantum efficiency is not high, band selective is poor, in recent years, resonant cavity enhanced (RCE) detector causes that researcher more and more pays close attention to
[2,3].RCE detector is that absorbed layer is inserted in Fabry-Paro chamber, and because cavity is to the selection of resonant wavelength and amplification, due to resonant cavity effect humidification, detector has very high sensitivity in resonance wave strong point, thereby has very high quantum efficiency
[2].
For realizing, incident light wavelength is selected, people attempt placing filter plate at detector surface, but filter plate is generally crystal, and cost is high, fragile.In view of the structure of RCE detector, the semiconductor absorption layer with crystal structure need to be grown on end mirror, therefore requires the material of end mirror to be similarly semiconductor die body structure.Nitride based dbr structure growth course is introduced dislocation in active layer, forms Photon Trapping, has reduced detectivity and efficiency.And prepared by detector surface to the dbr structure of dielectric film, just there is no this restriction.
It is a kind of by proportioning Al that patent [US2010/0068843A1] provides
xga
1-xas alloy is prepared the method for Bragg mirror
[4], adopt numerical control alloy (digital alloy) technology to improve to a certain extent traditional Al
xga
1-xthe performance of As/GaAs Bragg mirror.But due to the restriction of energy gap and the refractive index of material, the Bragg mirror operation wavelength of preparation is positioned at infrared band, cannot be applied to ultraviolet band.
Patent [201220003273.8] provides a kind of by SiO
2/ Si
3n
4form the method for Bragg mirror
[5], by will be by SiO
2/ Si
3n
4the current barrier layer of the dbr structure being staggered to form embeds light-emitting diode chip for backlight unit, and the former light that impinges perpendicularly on electrode below is reflexed to chip surface outgoing, has increased the luminous efficiency of chip, but and reckons without SiO
2/ Si
3n
4bragg mirror is applied to ultraviolet detector field.
This invention has proposed the method for optical delivery matrix design and the ultraviolet band pass filter of PECVD preparation based on dielectric film Bragg mirror, and by two DBR stack growths, the thickness of control medium film sublayer is realized and regulated filter center wavelength and passband width.
[list of references]
[1] the high-quality AlGaN material MOCVD for ultraviolet detector dbr structure grows and characteristic research. Acta Physica Sinica, 2007, the 56 volumes, o. 11th: 6717-05.
【2】Resonant-Cavity-Enhanced?UV?Metal-Semiconductor-Metal(MSM)Photodectors?Based?on?AlGaN?System.Physica?Status?Solidi(a),2001,188(1),321-324.
【3】Design?and?Fabrication?of?AlGaN-Based?Resonant-Cavity-Enhanced?p-i-n?UV?PDs.Quamtum?Electronics?Letters,2009,45(6),575-578.
[4] U.S.'s patent of invention, the patent No.: US20100068843A1Distributed Bragg ' s Reflector of Digital-Alloy Multinary Compound Semiconductor Jin Dong Song, Won Jun Choi, Jung Lee.
[5] Chinese invention patent, the patent No.: 201220003273.8 1 kinds of bright Yao Yu of novel light-emitting diode chip Wang Yan are permitted sub-soldier Niu Fengjuan Hou Zhao man
Summary of the invention
The present invention seeks to, the deficiency existing for existing photodetector manufacturing technology, propose the preparation method of the band pass filter based on Bragg mirror that a kind of technique is simple, cost is low, operation wavelength is controlled, can be used for improving the service behaviour of ultraviolet detector.The present invention pushes up the stacking distributed bragg reflector mirror in an end by PECVD method at Grown on Sapphire Substrates one, form the basic structure of band pass filter, its centre wavelength and passband width all can be controlled by adjusting kind, thickness, the chemical constituent of deielectric-coating.
A kind of based on SiO
2/ Si
3n
4the ultraviolet band pass filter of distributed bragg reflector mirror, selects sapphire (0001), aluminium nitride or aluminum gallium nitride substrate, and the surface of substrate is burnishing surface; On substrate or the superficial growth preparation with ultraviolet detection device structure one in front and one in back mirror and two speculums of top mirror at the bottom of stacking distributed Bragg, between two speculums, with intermediate isolating layer, separate formation ultraviolet band pass filter; Mirror at the bottom of growth distribution formula Bragg mirror, to form the right forbidden band of long-wave band in band pass filter reflectance spectrum, average reflectance is 85～95%, width is 50～80nm; Continued growth distributed bragg reflector mirror top mirror on end mirror, forms the left forbidden band of the short-and-medium wave band of band pass filter reflectance spectrum, and average reflectance is 85～95%, and width is 50～80nm; Interstitial growth optical isolation layer, its thickness is 50～150nm; Select dielectric film SiO
2with Si
3n
4, TiO
2, HfO
2in one of both form the unit structure of distributed bragg reflector mirror (DBR), the mirror period number of top mirror or end mirror is 4～20; Whole thickness range is 1.5 μ m～2 μ m.
1. the preparation method of ultraviolet band pass filter according to claim 1, is characterized in that adopting PECVD cycle growth SiO in Sapphire Substrate
2and Si
3n
4, TiO
2, HfO
2one of in, the stacking distributed bragg reflector mirror of preparation one one end of top mirror mirror, separates with intermediate isolating layer between two mirrors, forms the optics of ultraviolet band-pass filtering function, and step is as follows:
1) at (two inches two-sided) polishing sapphire (0001) substrate or there is the superficial growth SiO of ultraviolet detection device structure
2/ Si
3n
4dielectric film forms distributed bragg reflector mirror structure, determines foveal reflex wavelength, bandwidth, the cut-off wavelength of speculum, for the service band of calibration filters;
2) dielectric film adopts the growth of PECVD method, and wherein Si source, N source and O source are respectively silane, nitrogen and nitrous oxide; Whole thickness range is 1.5 μ m～2 μ m, and periodicity is 4～20, especially 10～20;
3) adopt PECVD equipment at two inches of twin polishing sapphire (0001) substrates or the superficial growth preparation with ultraviolet detection device structure stacking distributed bragg reflector mirror one in front and one in back, with intermediate isolating layer, separate between the two, form ultraviolet band pass filter.
Further, select dielectric film SiO
2with Si
3n
4, TiO
2, HfO
2in one of both form the unit structure of distributed bragg reflector mirror (DBR), the mirror period number of top mirror or end mirror is 4～20.
Dielectric film SiO
2with Si
3n
4, TiO
2, HfO
2in one of thickness roughly the same.
The SiO of preparation
2/ Si
3n
4distributed bragg reflector mirror structure, adopts PECVD method to control growth, and Si source, N source and O source are respectively silane (SiH
4), nitrogen (N
2) and nitrous oxide (N
2o), preparation is at two inches of twin polishing sapphire (0001) substrates or have the surface of ultraviolet detection device structure.
For growth Si
3n
4sublayer, reaction cavity pressure range is: 500～700Pa; Temperature range is: 280～350 ℃; Radio-frequency power scope is: 12～18W; SiH
4gas source and flow amount scope is: 15～30sccm; N
2gas source and flow amount scope is: 800～1000sccm;
For growth SiO
2sublayer, reaction cavity pressure range is: 150～300Pa; Temperature range is: 280～350 ℃; Radio-frequency power scope is: 6～10W; SiH
4gas source and flow amount scope is: 50～150sccm, N
2o gas source and flow amount scope is: 300～500sccm.
The present invention is according to Optical transfer matrix theory, and the optical reflection of analog computation distributed bragg reflector mirror and ultraviolet band pass filter is composed, and determines kind, cycle, thickness, the chemical composition of its multilayer dielectric film, to select suitable growth technique and parameter; Target operation wavelength is 280nm to 400nm.
Have and can to deielectric-coating sublayer thickness, control by the growth regulation time, change based on this passband width and the centre wavelength of band pass filter, realize centre wavelength from 280～400nm, passband width is from the band pass filter of 30nm～70nm; The centre wavelength of band pass filter, passband width all will be the key factor that affects UV photodetector performance.
Select dielectric film SiO
2with Si
3n
4the unit structure that forms distributed bragg reflector mirror (DBR), intermediate isolating layer is by Si
3n
4form, thickness is Si
3n
4one times of dielectric film or more than.
The present invention further improves, and considers, at two throwing substrate both side surface grow respectively top mirror and the end mirror of Bragg mirror, to weaken interference effect between two Bragg mirrors, to obtain larger wavelength, to select ratio, finally obtains the sensitivity that detector is higher.On the other hand, utilize other deielectric-coating material, as SiO
xn
y, MgF
2deng, the centre wavelength of detector is moved to deep ultraviolet or visible ray direction, so just can obtain wider operation interval and larger selection ratio.
The invention has the beneficial effects as follows, adopt PECVD growth to prepare SiO by design requirement
2/ Si
3n
4bragg mirror, by regulating the growth thickness of every layer material, reaches the object of controlling its corresponding band pass filter bandgap center position.In the vertical direction is two Bragg mirrors of growth continuously, and the passband width of band pass filter and passband center can regulate by changing the thickness of Bragg mirror.The invention provides based on SiO
2/ Si
3n
4preparation method's example of the ultraviolet band pass filter of Bragg mirror, wherein the Bragg mirror of bottom correspondence generates the right forbidden band of band pass filter, and the left forbidden band of the corresponding generation of the speculum on upper strata, by the filtration to incident light wave band, is improved the wavelength of detector and is selected ratio and sensitivity.
Accompanying drawing explanation
Fig. 1 PECVD single SiO that grows
2/ Si
3n
4bragg mirror DBR schematic diagram, wherein 1 is Sapphire Substrate, 2 (4) is Si
3n
4layer, 3 (5) is SiO
2layer, experiences several same thickness SiO
2/ Si
3n
4cycle.
Fig. 2 PECVD grow an end mirror DBR and a top mirror dbr structure, wherein intermediate isolating layer (space layer) comprises 7 for Si
3n
4layer, 8 is SiO
2layer, experiences several same thickness SiO
2/ Si
3n
4cycle.
Fig. 3 is based on SiO
2/ Si
3n
4the reflectance spectrum collection of illustrative plates of Bragg mirror band pass filter sample.
Specific implementation method
PECVD preparation is based on SiO
2/ Si
3n
4the method of the ultraviolet band pass filter of distributed bragg reflector mirror, comprises the following steps:
1), according to Optical transfer matrix theory, the optical reflection of analog computation distributed bragg reflector mirror and ultraviolet band pass filter spectrum, determines the kind, cycle, thickness, chemical composition of its multilayer dielectric film etc., to select suitable growth technique and parameter.
2) at two inches of twin polishing sapphire (0001) substrates or there is the superficial growth SiO of ultraviolet detection device structure
2/ Si
3n
4distributed bragg reflector mirror structure, as shown in Figure 1, determines foveal reflex wavelength, bandwidth, the cut-off wavelength of speculum, for the service band of calibration filters.Dielectric film adopts the growth of PECVD method, and wherein Si source, N source and O source are respectively silane (SiH
4), nitrogen (N
2) and nitrous oxide (N
2o), the thickness of total approximately 1.5 μ m～2 μ m, periodicity is 10～20.
3) adopt PECVD equipment at two inches of twin polishing sapphire (0001) substrates or the superficial growth preparation with ultraviolet detection device structure stacking distributed bragg reflector mirror one in front and one in back, with intermediate isolating layer, separate between the two, form ultraviolet band pass filter, as shown in Figure 2.
Designed ultraviolet band pass filter, target operating wavelength range is 280～400nm, selects dielectric film SiO
2, Si
3n
4, TiO
2, HfO
2in both form the unit structure of distributed bragg reflector mirror (DBR), mirror period number is 4～20.
The SiO of preparation
2/ Si
3n
4distributed bragg reflector mirror structure, is characterized in that adopting PECVD method to control growth, and Si source, N source and O source are respectively silane (SiH
4), nitrogen (N
2) and nitrous oxide (N
2o), preparation is at two inches of twin polishing sapphire (0001) substrates or have the surface of ultraviolet detection device structure.
The ultraviolet band pass filter of realizing, have and can to deielectric-coating sublayer thickness, control by the growth regulation time, change based on this passband width and the centre wavelength of band pass filter, the present invention can realize centre wavelength from 280～400nm, and passband width is from the band pass filter of 30nm～70nm.The centre wavelength of band pass filter, passband width all will be the key factor that affects UV photodetector performance.
Shown in Fig. 1-Fig. 3, the invention provides a kind of PECVD of utilization preparation based on SiO
2/ Si
3n
4the method of the ultraviolet band pass filter of distributed bragg reflector mirror, comprises the following steps:
Step 1: get a substrate 1(and consult Fig. 1), the material of described substrate 1 can be sapphire, aluminium nitride or aluminum gallium nitride, and the surface of substrate is burnishing surface.
Step 2: mirror at the bottom of epitaxial growth distributed bragg reflector mirror, the high-index material of growing successively layer Si
3n
4layer 2, thickness is 40～60nm approximately, low refractive index material layer SiO
2layer 3, thickness is 55～85nm approximately, and so several cycles of alternating growth, periodicity is 10～20, until Si
3n
4layer 4, SiO
2layer 5, Si
3n
4layer 6(is with reference to Fig. 1) till, right forbidden band in band pass filter reflectance spectrum formed; Dielectric film adopts the epitaxial growth of PECVD method, and wherein Si source, N source and O source are respectively SiH
4, N
2and N
2o, whole thickness approximately 1.5 μ m～2 μ m.
Step 3: continue epitaxial growth distributed bragg reflector mirror top mirror on end mirror, the high-index material of growing successively layer Si
3n
4layer 7, thickness is 35～60nm approximately, low refractive index material layer SiO
2layer 8, the about 50-80nm of thickness, like this several cycles of alternating growth, periodicity be 10～20 all can, until Si
3n
4layer 9, SiO
2layer 10, Si
3n
4layer 11(is with reference to Fig. 2) till, left forbidden band in band pass filter reflectance spectrum formed; Dielectric film adopts the epitaxial growth of PECVD method, and wherein Si source, N source and O source are respectively SiH
4, N
2and N
2o, the thickness of total approximately 1.1 μ m～1.3 μ m.
Process conditions arrange as follows:
Si
3n
4dielectric film growth technique: Si
3n
4, N
2and N
2o flow is respectively 25sccm, 900sccm and 0sccm, and cavity air pressure is 600Pa, and radio-frequency power is 15W, and reaction cavity temperature is 350 ℃.
SiO
2dielectric film growth technique: Si
3n
4, N
2and N
2o flow is respectively 100sccm, 0sccm and 300sccm, and cavity air pressure is 300Pa, and radio-frequency power is 10W, and cavity temperature is 350 ℃.
Technique arranges as follows:
Si
3n
4dielectric film growth technique: Si
3n
4, N
2and N
2o flow is respectively 25sccm, 900sccm and 0sccm, and cavity air pressure is 600Pa, and radio-frequency power is 15W, and reaction cavity temperature is 350 ℃.
SiO
2dielectric film growth technique: Si
3n
4, N
2and N
2o flow is respectively 100sccm, 0sccm and 300sccm, and cavity air pressure is 300Pa, and radio-frequency power is 10W, and cavity temperature is 350 ℃.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. one kind based on SiO
2/ Si
3n
4the ultraviolet band pass filter of distributed bragg reflector mirror, is characterized in that selecting sapphire (0001), aluminium nitride or aluminum gallium nitride substrate, and the surface of substrate is burnishing surface; On substrate or the superficial growth preparation with ultraviolet detection device structure one in front and one in back mirror and two speculums of top mirror at the bottom of stacking distributed Bragg, between two speculums, with intermediate isolating layer, separate formation ultraviolet band pass filter; Mirror at the bottom of growth distribution formula Bragg mirror, to form the right forbidden band of long-wave band in band pass filter reflectance spectrum, average reflectance is 85～95%, width is 50～80nm; Continued growth distributed bragg reflector mirror top mirror on end mirror, forms the left forbidden band of the short-and-medium wave band of band pass filter reflectance spectrum, and average reflectance is 85～95%, and width is 50～80nm; Interstitial growth optical isolation layer, its thickness is 50～150nm; Select dielectric film SiO
2with Si
3n
4, TiO
2, HfO
2in one of both form the unit structure of distributed bragg reflector mirror (DBR), the mirror period number of top mirror or end mirror is 4～20; Whole thickness range is 1.5 μ m～2 μ m.
2. the preparation method of ultraviolet band pass filter according to claim 1, is characterized in that adopting PECVD cycle growth SiO in Sapphire Substrate
2and Si
3n
4, TiO
2, HfO
2one of in, the stacking distributed bragg reflector mirror of preparation one one end of top mirror mirror, separates with intermediate isolating layer between two mirrors, forms the optics of ultraviolet band-pass filtering function, and step is as follows:
1) at polishing sapphire (0001) substrate or there is the superficial growth SiO of ultraviolet detection device structure
2/ Si
3n
4dielectric film forms distributed bragg reflector mirror structure, determines foveal reflex wavelength, bandwidth, the cut-off wavelength of speculum, for the service band of calibration filters;
2) dielectric film adopts the growth of PECVD method, and wherein Si source, N source and O source are respectively silane, nitrogen and nitrous oxide; Whole thickness range is 1.5 μ m～2 μ m, and periodicity is 4～20, especially 10～20;
3) adopt PECVD equipment at two inches of twin polishing sapphire (0001) substrates or the superficial growth preparation with ultraviolet detection device structure stacking distributed bragg reflector mirror one in front and one in back, with intermediate isolating layer, separate between the two, form ultraviolet band pass filter.
3. the preparation method of ultraviolet band pass filter according to claim 1, is characterized in that selecting dielectric film SiO
2with Si
3n
4, TiO
2, HfO
2in one of both form the unit structure of distributed bragg reflector mirror (DBR), the mirror period number of top mirror or end mirror is 10～20.
4. the preparation method of ultraviolet band pass filter according to claim 1, is characterized in that the SiO of preparation
2/ Si
3n
4distributed bragg reflector mirror structure, adopts PECVD method to control growth, and Si source, N source and O source are respectively silane (SiH
4), nitrogen (N
2) and nitrous oxide (N
2o), preparation is at polishing sapphire (0001) substrate or have the surface of ultraviolet detection device structure;
For growth Si
3n
4sublayer, reaction cavity pressure range is: 500～700Pa; Temperature range is: 280～350 ℃; Radio-frequency power scope is: 12～18W; SiH
4gas source and flow amount scope is: 15～30sccm; N
2gas source and flow amount scope is: 800～1000sccm;
For growth SiO
2sublayer, reaction cavity pressure range is: 150～300Pa; Temperature range is: 280～350 ℃; Radio-frequency power scope is: 6～10W; SiH
4gas source and flow amount scope is: 50～150sccm, N
2o gas source and flow amount scope is: 300～500sccm.
5. the preparation method of ultraviolet band pass filter according to claim 1, it is characterized in that according to Optical transfer matrix theory, the optical reflection spectrum of analog computation distributed bragg reflector mirror and ultraviolet band pass filter, determine kind, cycle, thickness, the chemical composition of its multilayer dielectric film, to select suitable growth technique and parameter; Target operation wavelength is 280nm to 400nm.
6. the preparation method of ultraviolet band pass filter according to claim 1, its feature has and can to deielectric-coating sublayer thickness, control by the growth regulation time, change based on this passband width and the centre wavelength of band pass filter, realize centre wavelength from 280～400nm, passband width is from the band pass filter of 30nm～70nm.
7. the preparation method of ultraviolet band pass filter according to claim 1, is characterized in that dielectric film SiO
2with Si
3n
4, TiO
2, HfO
2in one of thickness roughly the same.
8. the preparation method of ultraviolet band pass filter according to claim 1, is characterized in that selecting dielectric film SiO
2with Si
3n
4the unit structure that forms distributed bragg reflector mirror (DBR), intermediate isolating layer is by Si
3n
4form, thickness is Si
3n
4one times of dielectric film or more than.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047749A (en) * | 2015-08-25 | 2015-11-11 | 镇江镓芯光电科技有限公司 | SiC Schottky ultraviolet detector with passivation layer having filtering function |
| CN105093376A (en) * | 2015-09-07 | 2015-11-25 | 西安工业大学 | Preparation method for bandpass optical filters with central wavelengths thereof gradually varied |
| CN105738996A (en) * | 2016-05-11 | 2016-07-06 | 中国科学技术大学 | Detector filtering window |
| CN111164394A (en) * | 2017-09-28 | 2020-05-15 | ams有限公司 | Optical sensing device and method for manufacturing optical sensing device |
| CN111769168A (en) * | 2020-07-06 | 2020-10-13 | 武汉光谷量子技术有限公司 | Photoelectric detector with narrow spectral response and manufacturing method and design method thereof |
| CN112394441A (en) * | 2020-11-25 | 2021-02-23 | 天津津航技术物理研究所 | Optical filter for hyperspectral imaging |
| CN113960705A (en) * | 2021-10-21 | 2022-01-21 | 沈阳仪表科学研究院有限公司 | Broadband high-reflection all-dielectric-film ultraviolet reflecting mirror for ultraviolet curing and preparation method thereof |
| CN114196927A (en) * | 2021-11-25 | 2022-03-18 | 深圳先进技术研究院 | Ultraviolet anti-reflection glass based on sapphire substrate and preparation method and application thereof |
| CN114200566A (en) * | 2021-12-14 | 2022-03-18 | 安徽中科光栅科技有限公司 | Near-infrared band-pass filter with series structure and design method |
| CN114377165A (en) * | 2020-10-22 | 2022-04-22 | 亚丁卫生耳鼻喉科 | Sterilization device using ultraviolet light source harmless to human body |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202423369U (en) * | 2012-01-05 | 2012-09-05 | 湘能华磊光电股份有限公司 | Light-emitting diode chip |
-
2013
- 2013-12-12 CN CN201310680602.1A patent/CN103681898A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202423369U (en) * | 2012-01-05 | 2012-09-05 | 湘能华磊光电股份有限公司 | Light-emitting diode chip |
Non-Patent Citations (3)
| Title |
|---|
| 李志成: ""紫外波段SiO2/Si3N4分布式布拉格反射镜的研究"", 《信息科技辑》 * |
| 李志成: ""紫外波段SiO2/Si3N4分布式布拉格反射镜的研究"", 《信息科技辑》, no. 11, 30 November 2012 (2012-11-30), pages 135 - 16 * |
| 李志成等: ""紫外波段SiO2/Si3N4介质膜分布式布拉格反射镜的制备与研究"", 《物理学报》 * |
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| CN114196927A (en) * | 2021-11-25 | 2022-03-18 | 深圳先进技术研究院 | Ultraviolet anti-reflection glass based on sapphire substrate and preparation method and application thereof |
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