CN103014833B - 硅锭的制备方法 - Google Patents
硅锭的制备方法 Download PDFInfo
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- CN103014833B CN103014833B CN201210573190.7A CN201210573190A CN103014833B CN 103014833 B CN103014833 B CN 103014833B CN 201210573190 A CN201210573190 A CN 201210573190A CN 103014833 B CN103014833 B CN 103014833B
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- silicon
- crucible
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- single crystal
- ingot
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 78
- 239000010703 silicon Substances 0.000 title claims abstract description 78
- 238000002360 preparation method Methods 0.000 title claims description 13
- 239000013078 crystal Substances 0.000 claims abstract description 50
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 239000002210 silicon-based material Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000009413 insulation Methods 0.000 claims abstract description 19
- 238000002844 melting Methods 0.000 claims abstract description 15
- 230000008018 melting Effects 0.000 claims abstract description 15
- 238000007711 solidification Methods 0.000 claims abstract description 13
- 230000008023 solidification Effects 0.000 claims abstract description 13
- 239000002994 raw material Substances 0.000 claims abstract description 12
- 238000005266 casting Methods 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 229910002804 graphite Inorganic materials 0.000 claims description 21
- 239000010439 graphite Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (15)
Priority Applications (1)
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CN201210573190.7A CN103014833B (zh) | 2012-12-26 | 2012-12-26 | 硅锭的制备方法 |
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CN201210573190.7A CN103014833B (zh) | 2012-12-26 | 2012-12-26 | 硅锭的制备方法 |
Publications (2)
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CN103014833A CN103014833A (zh) | 2013-04-03 |
CN103014833B true CN103014833B (zh) | 2015-11-18 |
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CN201210573190.7A Active CN103014833B (zh) | 2012-12-26 | 2012-12-26 | 硅锭的制备方法 |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103215633B (zh) * | 2013-04-10 | 2016-04-13 | 衡水英利新能源有限公司 | 一种多晶硅的铸锭方法 |
CN103361724A (zh) * | 2013-06-21 | 2013-10-23 | 东海晶澳太阳能科技有限公司 | 硼-镓共掺高效多晶硅及其制备方法 |
CN103590102B (zh) * | 2013-06-21 | 2016-02-03 | 横店集团东磁股份有限公司 | 提高多晶硅片转换效率的多晶铸锭工艺 |
CN103343388A (zh) * | 2013-07-18 | 2013-10-09 | 阿特斯(中国)投资有限公司 | 多晶硅铸锭的制备方法 |
CN104726934A (zh) * | 2013-12-24 | 2015-06-24 | 青岛隆盛晶硅科技有限公司 | 一种可实现低位错密度的高效铸锭半熔工艺 |
CN103882517A (zh) * | 2014-04-04 | 2014-06-25 | 阿特斯(中国)投资有限公司 | 多晶硅锭的制备方法 |
CN104213191A (zh) * | 2014-08-28 | 2014-12-17 | 北京京仪集团涿鹿光伏材料有限公司 | 一种半熔高效多晶硅铸锭工艺 |
CN104404618A (zh) * | 2014-11-28 | 2015-03-11 | 青岛隆盛晶硅科技有限公司 | 一种可降低多晶硅电池片的低效片比例的铸锭工艺 |
CN105154970A (zh) * | 2015-09-10 | 2015-12-16 | 湖南红太阳光电科技有限公司 | 一种高效多晶硅铸锭的制备方法 |
CN105821473B (zh) * | 2015-10-29 | 2018-11-06 | 江苏美科硅能源有限公司 | 一种具有低底部粘埚率的半熔高效锭制备方法 |
CN107022791A (zh) * | 2017-05-24 | 2017-08-08 | 镇江仁德新能源科技有限公司 | 一种高效硅晶片热场长晶装置及方法 |
CN108396376A (zh) * | 2017-07-18 | 2018-08-14 | 陕西西京电子科技有限公司 | 一种类单晶和高效多晶的混合硅锭的制备方法 |
CN113026088A (zh) * | 2019-12-24 | 2021-06-25 | 苏州阿特斯阳光电力科技有限公司 | 晶体硅锭的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101428273A (zh) * | 2008-12-05 | 2009-05-13 | 江阴海润太阳能电力有限公司 | 多晶硅太阳能电池铸锭用石英坩埚的氮化硅喷涂方法 |
CN102277618A (zh) * | 2011-07-28 | 2011-12-14 | 英利能源(中国)有限公司 | 多晶硅锭及其制造方法、生长炉及其底板、太阳能电池 |
CN202492614U (zh) * | 2012-02-28 | 2012-10-17 | 常州天合光能有限公司 | 复合型坩埚侧面护板 |
CN102776555A (zh) * | 2012-04-01 | 2012-11-14 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅锭及其制备方法和多晶硅片 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102011002599B4 (de) * | 2011-01-12 | 2016-06-23 | Solarworld Innovations Gmbh | Verfahren zur Herstellung eines Silizium-Ingots und Silizium-Ingot |
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- 2012-12-26 CN CN201210573190.7A patent/CN103014833B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101428273A (zh) * | 2008-12-05 | 2009-05-13 | 江阴海润太阳能电力有限公司 | 多晶硅太阳能电池铸锭用石英坩埚的氮化硅喷涂方法 |
CN102277618A (zh) * | 2011-07-28 | 2011-12-14 | 英利能源(中国)有限公司 | 多晶硅锭及其制造方法、生长炉及其底板、太阳能电池 |
CN202492614U (zh) * | 2012-02-28 | 2012-10-17 | 常州天合光能有限公司 | 复合型坩埚侧面护板 |
CN102776555A (zh) * | 2012-04-01 | 2012-11-14 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅锭及其制备方法和多晶硅片 |
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Address after: 215000 199 deer Road, hi tech Development Zone, Jiangsu, Suzhou Co-patentee after: CSI Solar Power (Luoyang) Co., Ltd. Patentee after: Artes sunshine Power Group Co. Ltd. Address before: 215000 199 deer Road, hi tech Development Zone, Jiangsu, Suzhou Co-patentee before: CSI Solar Power (Luoyang) Co., Ltd. Patentee before: Canadian (China) Investment Co., Ltd. |
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Effective date of registration: 20180821 Address after: 471023 No. 10 Guan Lin Road, Luolong science and Technology Park, Luoyang, Henan Patentee after: Luoyang Artes Photovoltaic Technology Co. Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Co-patentee before: CSI Solar Power (Luoyang) Co., Ltd. Patentee before: Artes sunshine Power Group Co. Ltd. |