CN103003941B - 光电子器件 - Google Patents

光电子器件 Download PDF

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Publication number
CN103003941B
CN103003941B CN201180035714.0A CN201180035714A CN103003941B CN 103003941 B CN103003941 B CN 103003941B CN 201180035714 A CN201180035714 A CN 201180035714A CN 103003941 B CN103003941 B CN 103003941B
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CN
China
Prior art keywords
region
doped
carrier substrate
type region
optoelectronic device
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Application number
CN201180035714.0A
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English (en)
Chinese (zh)
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CN103003941A (zh
Inventor
卢茨·赫佩尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN103003941A publication Critical patent/CN103003941A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201180035714.0A 2010-07-20 2011-05-25 光电子器件 Active CN103003941B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010027679.0 2010-07-20
DE102010027679A DE102010027679A1 (de) 2010-07-20 2010-07-20 Optoelektronisches Bauelement
PCT/EP2011/058573 WO2012010352A1 (de) 2010-07-20 2011-05-25 Optoelektronisches bauelement

Publications (2)

Publication Number Publication Date
CN103003941A CN103003941A (zh) 2013-03-27
CN103003941B true CN103003941B (zh) 2015-09-30

Family

ID=44454661

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180035714.0A Active CN103003941B (zh) 2010-07-20 2011-05-25 光电子器件

Country Status (7)

Country Link
US (1) US9000476B2 (enExample)
EP (1) EP2596532B1 (enExample)
JP (1) JP5850931B2 (enExample)
KR (1) KR101792678B1 (enExample)
CN (1) CN103003941B (enExample)
DE (1) DE102010027679A1 (enExample)
WO (1) WO2012010352A1 (enExample)

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Publication number Priority date Publication date Assignee Title
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010056056A1 (de) * 2010-12-23 2012-06-28 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines elektrischen Anschlussträgers
DE102011015821B4 (de) * 2011-04-01 2023-04-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
DE102013105631A1 (de) * 2013-05-31 2014-12-04 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102014103828A1 (de) * 2014-03-20 2015-09-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen
DE102014116935A1 (de) * 2014-11-19 2016-05-19 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015100578A1 (de) * 2015-01-15 2016-07-21 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015108545A1 (de) * 2015-05-29 2016-12-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102015111485A1 (de) * 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102017102545B4 (de) * 2017-02-09 2018-12-20 Infineon Technologies Ag Halbleitervorrichtung, Drucksensor, Mikrofon, Beschleunigungssensor und Verfahren zum Bilden einer Halbleitervorrichtung

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CN101345235A (zh) * 2008-08-25 2009-01-14 广州南科集成电子有限公司 带静电保护功能的led芯片及制造方法
CN101375421A (zh) * 2006-01-30 2009-02-25 三垦电气株式会社 半导体发光装置及其制造方法
EP2094588A2 (fr) * 2006-12-18 2009-09-02 Degremont Silo pour le stockage de produits en vrac, notamment des boues sechees de stations d'epuration

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JP3787202B2 (ja) * 1997-01-10 2006-06-21 ローム株式会社 半導体発光素子
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
JP2000208822A (ja) 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
JP4296644B2 (ja) * 1999-01-29 2009-07-15 豊田合成株式会社 発光ダイオード
DE10006738C2 (de) 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
JP2003529937A (ja) 2000-03-30 2003-10-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置及び半導体装置を製造する方法
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DE10148227B4 (de) 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
US6531328B1 (en) 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
JP3776824B2 (ja) 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
NL1023680C2 (nl) 2003-06-17 2004-12-20 Tno Sensor met polymeren componenten.
US7291529B2 (en) 2003-11-12 2007-11-06 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
TWI256676B (en) * 2004-03-26 2006-06-11 Siliconix Inc Termination for trench MIS device having implanted drain-drift region
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TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
JP4613709B2 (ja) 2005-06-24 2011-01-19 セイコーエプソン株式会社 半導体装置の製造方法
TWI422044B (zh) 2005-06-30 2014-01-01 克立公司 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
DE102006015788A1 (de) 2006-01-27 2007-09-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR100746783B1 (ko) 2006-02-28 2007-08-06 엘지전자 주식회사 발광소자 패키지 및 그 제조방법
KR100854328B1 (ko) 2006-07-07 2008-08-28 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
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DE102008034560B4 (de) * 2008-07-24 2022-10-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995022842A1 (en) * 1994-02-18 1995-08-24 Analog Devices, Incorporated Diode device to protect metal-oxide-metal capacitors
CN1750286A (zh) * 2004-09-15 2006-03-22 三垦电气株式会社 设有保护元件的半导体发光装置及其制造方法
CN101375421A (zh) * 2006-01-30 2009-02-25 三垦电气株式会社 半导体发光装置及其制造方法
EP2094588A2 (fr) * 2006-12-18 2009-09-02 Degremont Silo pour le stockage de produits en vrac, notamment des boues sechees de stations d'epuration
CN101345235A (zh) * 2008-08-25 2009-01-14 广州南科集成电子有限公司 带静电保护功能的led芯片及制造方法

Also Published As

Publication number Publication date
JP2013532900A (ja) 2013-08-19
EP2596532B1 (de) 2016-10-05
CN103003941A (zh) 2013-03-27
US20130207154A1 (en) 2013-08-15
JP5850931B2 (ja) 2016-02-03
US9000476B2 (en) 2015-04-07
DE102010027679A1 (de) 2012-01-26
WO2012010352A1 (de) 2012-01-26
KR20130058728A (ko) 2013-06-04
KR101792678B1 (ko) 2017-11-02
EP2596532A1 (de) 2013-05-29

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