CN102995125A - 一种半导体硅片的热处理工艺 - Google Patents
一种半导体硅片的热处理工艺 Download PDFInfo
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- CN102995125A CN102995125A CN201210388391XA CN201210388391A CN102995125A CN 102995125 A CN102995125 A CN 102995125A CN 201210388391X A CN201210388391X A CN 201210388391XA CN 201210388391 A CN201210388391 A CN 201210388391A CN 102995125 A CN102995125 A CN 102995125A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 70
- 239000010703 silicon Substances 0.000 title claims abstract description 70
- 238000010438 heat treatment Methods 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000010453 quartz Substances 0.000 claims abstract description 18
- 238000007669 thermal treatment Methods 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 11
- 239000001301 oxygen Substances 0.000 abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 abstract description 11
- 238000000137 annealing Methods 0.000 abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 238000011282 treatment Methods 0.000 abstract description 3
- 230000000087 stabilizing effect Effects 0.000 abstract 2
- 239000013078 crystal Substances 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 238000012545 processing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 210000001061 forehead Anatomy 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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CN201210388391.XA CN102995125B (zh) | 2012-10-12 | 2012-10-12 | 一种半导体硅片的热处理工艺 |
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CN201210388391.XA CN102995125B (zh) | 2012-10-12 | 2012-10-12 | 一种半导体硅片的热处理工艺 |
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CN102995125A true CN102995125A (zh) | 2013-03-27 |
CN102995125B CN102995125B (zh) | 2015-06-24 |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103484941A (zh) * | 2013-09-26 | 2014-01-01 | 宜昌南玻硅材料有限公司 | 消除太阳能p型单晶氧施主效应的退火装置及方法 |
CN104377128A (zh) * | 2013-08-12 | 2015-02-25 | 徐州市晨创电子科技有限公司 | 一种6.8伏双向tvs扩散片的制作工艺 |
CN105226135A (zh) * | 2015-10-14 | 2016-01-06 | 新奥光伏能源有限公司 | 一种硅异质结太阳能电池及其制备方法 |
CN105470129A (zh) * | 2015-12-01 | 2016-04-06 | 北京七星华创电子股份有限公司 | 一种消除氧热施主对少子扩散长度影响的方法 |
CN105568390A (zh) * | 2015-12-28 | 2016-05-11 | 宁晋赛美港龙电子材料有限公司 | 一种消除硅片同心圆缺陷的方法 |
CN105603534A (zh) * | 2016-02-26 | 2016-05-25 | 吕远芳 | 一种锗晶体应力消除方法 |
CN107761173A (zh) * | 2017-10-27 | 2018-03-06 | 四川永祥硅材料有限公司 | 一种降低单晶棒假性高电阻的方法 |
CN109137068A (zh) * | 2018-08-09 | 2019-01-04 | 锦州神工半导体股份有限公司 | 一种单晶硅片的退火方法 |
CN110170929A (zh) * | 2019-05-27 | 2019-08-27 | 大连百斯光电科技有限公司 | 一种单晶硅抛光片热处理装置及工艺 |
CN111489969A (zh) * | 2019-01-29 | 2020-08-04 | 东莞新科技术研究开发有限公司 | 半导体硅片的热处理方法 |
CN113488562A (zh) * | 2021-07-23 | 2021-10-08 | 常州时创能源股份有限公司 | 一种原位掺杂非晶硅的晶化退火处理方法 |
CN113721076A (zh) * | 2021-08-09 | 2021-11-30 | 上海新昇半导体科技有限公司 | 一种硅片电阻率的测量方法 |
CN115116910A (zh) * | 2022-07-19 | 2022-09-27 | 宁夏中欣晶圆半导体科技有限公司 | 通用横式石英舟及同时对不同规格硅片的氧化热处理方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1083874A (zh) * | 1993-05-22 | 1994-03-16 | 浙江大学 | 含氮直拉硅单晶的热处理方法 |
CN1267751A (zh) * | 2000-03-30 | 2000-09-27 | 天津市半导体材料厂 | 生产硅单晶的直拉区熔法 |
CN1769549A (zh) * | 2004-11-05 | 2006-05-10 | 北京有色金属研究总院 | 一种单晶硅抛光片热处理工艺 |
-
2012
- 2012-10-12 CN CN201210388391.XA patent/CN102995125B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1083874A (zh) * | 1993-05-22 | 1994-03-16 | 浙江大学 | 含氮直拉硅单晶的热处理方法 |
CN1267751A (zh) * | 2000-03-30 | 2000-09-27 | 天津市半导体材料厂 | 生产硅单晶的直拉区熔法 |
CN1769549A (zh) * | 2004-11-05 | 2006-05-10 | 北京有色金属研究总院 | 一种单晶硅抛光片热处理工艺 |
Non-Patent Citations (2)
Title |
---|
蔡玉霜 等: ""直拉硅单晶热处理及其对太阳电池性能的影响"", 《固体电子学研究与进展》, vol. 12, no. 4, 30 November 1992 (1992-11-30), pages 362 - 367 * |
裴艳丽 等: ""高温快速热处理对硅中热施主的影响"", 《半导体学报》, vol. 24, no. 10, 31 October 2003 (2003-10-31), pages 1035 - 1039 * |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377128A (zh) * | 2013-08-12 | 2015-02-25 | 徐州市晨创电子科技有限公司 | 一种6.8伏双向tvs扩散片的制作工艺 |
CN103484941A (zh) * | 2013-09-26 | 2014-01-01 | 宜昌南玻硅材料有限公司 | 消除太阳能p型单晶氧施主效应的退火装置及方法 |
CN105226135A (zh) * | 2015-10-14 | 2016-01-06 | 新奥光伏能源有限公司 | 一种硅异质结太阳能电池及其制备方法 |
CN105470129B (zh) * | 2015-12-01 | 2018-10-16 | 北京北方华创微电子装备有限公司 | 一种消除氧热施主对少子扩散长度影响的方法 |
CN105470129A (zh) * | 2015-12-01 | 2016-04-06 | 北京七星华创电子股份有限公司 | 一种消除氧热施主对少子扩散长度影响的方法 |
CN105568390A (zh) * | 2015-12-28 | 2016-05-11 | 宁晋赛美港龙电子材料有限公司 | 一种消除硅片同心圆缺陷的方法 |
CN105568390B (zh) * | 2015-12-28 | 2018-07-06 | 宁晋松宫电子材料有限公司 | 一种消除硅片同心圆缺陷的方法 |
CN105603534A (zh) * | 2016-02-26 | 2016-05-25 | 吕远芳 | 一种锗晶体应力消除方法 |
CN107761173A (zh) * | 2017-10-27 | 2018-03-06 | 四川永祥硅材料有限公司 | 一种降低单晶棒假性高电阻的方法 |
CN109137068A (zh) * | 2018-08-09 | 2019-01-04 | 锦州神工半导体股份有限公司 | 一种单晶硅片的退火方法 |
CN109137068B (zh) * | 2018-08-09 | 2020-10-16 | 锦州神工半导体股份有限公司 | 一种单晶硅片的退火方法 |
CN111489969A (zh) * | 2019-01-29 | 2020-08-04 | 东莞新科技术研究开发有限公司 | 半导体硅片的热处理方法 |
CN110170929A (zh) * | 2019-05-27 | 2019-08-27 | 大连百斯光电科技有限公司 | 一种单晶硅抛光片热处理装置及工艺 |
CN113488562A (zh) * | 2021-07-23 | 2021-10-08 | 常州时创能源股份有限公司 | 一种原位掺杂非晶硅的晶化退火处理方法 |
CN113721076A (zh) * | 2021-08-09 | 2021-11-30 | 上海新昇半导体科技有限公司 | 一种硅片电阻率的测量方法 |
CN115116910A (zh) * | 2022-07-19 | 2022-09-27 | 宁夏中欣晶圆半导体科技有限公司 | 通用横式石英舟及同时对不同规格硅片的氧化热处理方法 |
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Owner name: ZHEJIANG COWIN ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SUN XINLI Effective date: 20130716 |
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Effective date of registration: 20130716 Address after: 313100, No. 1299, front East Street, Changxing County Economic Development Zone, Zhejiang, Huzhou Applicant after: Zhejiang Cowin Electronics Co., Ltd. Address before: 313199 Zhejiang city of Huzhou province Changxing County City Lijing Building 2 pheasant town 41 unit 102 room Applicant before: Sun Xinli |
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Address after: 313100, No. 1299, front East Street, Changxing County Economic Development Zone, Zhejiang, Huzhou Applicant after: ZHEJIANG ZHONGJING TECHNOLOGY CO., LTD. Address before: 313100, No. 1299, front East Street, Changxing County Economic Development Zone, Zhejiang, Huzhou Applicant before: Zhejiang Cowin Electronics Co., Ltd. |
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