CN104377128A - 一种6.8伏双向tvs扩散片的制作工艺 - Google Patents

一种6.8伏双向tvs扩散片的制作工艺 Download PDF

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Publication number
CN104377128A
CN104377128A CN201310347644.3A CN201310347644A CN104377128A CN 104377128 A CN104377128 A CN 104377128A CN 201310347644 A CN201310347644 A CN 201310347644A CN 104377128 A CN104377128 A CN 104377128A
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diffusion
temperature
tvs
technology
bothway
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陈创
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XUZHOU CHENCHUANG ELECTRONIC TECHNOLOGY Co Ltd
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XUZHOU CHENCHUANG ELECTRONIC TECHNOLOGY Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609Diodes
    • H01L29/66143Schottky diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)

Abstract

本发明公开了一种6.8伏双向TVS扩散片的制作工艺,包括硅片清洗、叠纸源、低温烧源、升温、高温扩散、出炉、泡片、镀镍、划片,所述扩散温度为1250℃,扩散之后直接在1250℃下高温出炉,本发明所提供的6.8伏双向TVS扩散片的制作工艺大胆创新,解决了工作电压和漏电流之间的矛盾关系,使这两者都能达到合格要求,且没有不良现象发生,节约了成本,可创造良好的经济效益。

Description

一种6.8伏双向TVS扩散片的制作工艺
技术领域
本发明涉及一种瞬态电压抑制二极管扩散片的制作工艺,特别涉及一种6.8伏双向瞬态电压抑制二极管扩散片的制作工艺。
背景技术
在做TVS扩散片的过程中,工作电压VB越低,漏电流IR越大,由于6.8CA要做的电压是整系列扩散片中最低的,6.8CA的标准为VB=6.45~7.14V,而IR≤1000μA。
根据正常的工艺过程,扩散温度一般为1250℃左右,硅片扩散完后必须经过5个小时的慢降温,在600℃左右出炉。按照这种常规工艺做法,VB如果能实现,而IR往往大于2000μA,很难合格。
为了使工作电压和漏电流均合格,人们一直在扩散温度和扩散时间上面反复调整、试验,对于工作电压和漏电流之间的矛盾却一直得不到解决。所以必须找到一种切实解决该问题的新的工艺方法。
发明内容
为解决上述技术问题,本发明提供了一种6.8伏双向TVS扩散片的制作工艺,以达到可以保证产品的工作电压和漏电流均合格的目的。
为达到上述目的,本发明的技术方案如下:
一种6.8伏双向TVS扩散片的制作工艺,包括硅片清洗、叠纸源、低温烧源、升温、高温扩散、出炉、泡片、镀镍、划片,所述扩散温度为1250℃,扩散之后直接在1250℃下高温出炉。
通过上述技术方案,本发明提供的6.8伏双向TVS扩散片的制作工艺大胆创新,采用在1250℃下直接高温出炉的工艺,解决了工作电压和漏电流之间的矛盾关系,使这两者都能达到合格要求,且没有不良现象发生,节约了成本,可创造良好的经济效益。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述。
本发明提供了一种6.8伏双向TVS扩散片的制作工艺,包括硅片清洗、叠纸源、低温烧源、升温、高温扩散、出炉、泡片、镀镍、划片,所述扩散温度为1250℃。
实施例1,扩散之后分降温到800℃后出炉;
实施例2,扩散之后降温到1000℃后出炉;
实施例3,扩散之后降温到1200℃后出炉;
实施例4,扩散之后直接在1250℃下高温出炉。
经过测试,实施例1、2、3制得的产品都没有达到预期效果,工作电压和漏电流不能同时都合格,只有实施例4,在1250℃下直接出炉才能保证漏点最小化,彻底解决了工作电压和漏电流之间的矛盾,制得合格的产品。
本发明提供的6.8伏双向TVS扩散片的制作工艺大胆创新,采用在1250℃下直接高温出炉的工艺,解决了工作电压和漏电流之间的矛盾关系,保证了该产品的工作电压在6.45~7.14V之间,且漏电流IR≤1000μA,使这两者都能达到合格要求,且没有不良现象发生。
传统工艺温度要从1250℃降到600℃需要5个小时,用电60千瓦/小时,采用该工艺直接出炉极大地节约了成本,并且可创造良好的经济效益。
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (1)

1.一种6.8伏双向TVS扩散片的制作工艺,包括硅片清洗、叠纸源、低温烧源、升温、高温扩散、出炉、泡片、镀镍、划片,其特征在于,所述扩散温度为1250℃,扩散之后直接在1250℃下高温出炉。
CN201310347644.3A 2013-08-12 2013-08-12 一种6.8伏双向tvs扩散片的制作工艺 Pending CN104377128A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070077738A1 (en) * 2005-10-03 2007-04-05 Aram Tanielian Fabrication of small scale matched bi-polar TVS devices having reduced parasitic losses
CN101404254A (zh) * 2008-10-31 2009-04-08 杭州杭鑫电子工业有限公司 一种硅单晶片制造开放pn结快恢复整流二极管的方法
CN102299204A (zh) * 2011-08-30 2011-12-28 巨力新能源股份有限公司 一种太阳能电池片扩散工艺中的退舟出炉方法
CN102995125A (zh) * 2012-10-12 2013-03-27 孙新利 一种半导体硅片的热处理工艺
CN103107086A (zh) * 2013-01-29 2013-05-15 淄博晨启电子有限公司 一种低压芯片的生产工艺及其低压芯片

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070077738A1 (en) * 2005-10-03 2007-04-05 Aram Tanielian Fabrication of small scale matched bi-polar TVS devices having reduced parasitic losses
CN101404254A (zh) * 2008-10-31 2009-04-08 杭州杭鑫电子工业有限公司 一种硅单晶片制造开放pn结快恢复整流二极管的方法
CN102299204A (zh) * 2011-08-30 2011-12-28 巨力新能源股份有限公司 一种太阳能电池片扩散工艺中的退舟出炉方法
CN102995125A (zh) * 2012-10-12 2013-03-27 孙新利 一种半导体硅片的热处理工艺
CN103107086A (zh) * 2013-01-29 2013-05-15 淄博晨启电子有限公司 一种低压芯片的生产工艺及其低压芯片

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Application publication date: 20150225