CN102985592B - 线性批量化学气相沉积系统 - Google Patents
线性批量化学气相沉积系统 Download PDFInfo
- Publication number
- CN102985592B CN102985592B CN201180033855.9A CN201180033855A CN102985592B CN 102985592 B CN102985592 B CN 102985592B CN 201180033855 A CN201180033855 A CN 201180033855A CN 102985592 B CN102985592 B CN 102985592B
- Authority
- CN
- China
- Prior art keywords
- linear
- substrate
- substrates
- cvd system
- square position
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/787,082 | 2010-05-25 | ||
US12/787,082 US8986451B2 (en) | 2010-05-25 | 2010-05-25 | Linear batch chemical vapor deposition system |
PCT/US2011/036167 WO2011149678A2 (en) | 2010-05-25 | 2011-05-12 | Linear batch chemical vapor deposition system |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102985592A CN102985592A (zh) | 2013-03-20 |
CN102985592B true CN102985592B (zh) | 2015-05-06 |
Family
ID=45004655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180033855.9A Expired - Fee Related CN102985592B (zh) | 2010-05-25 | 2011-05-12 | 线性批量化学气相沉积系统 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8986451B2 (zh) |
KR (2) | KR20150085137A (zh) |
CN (1) | CN102985592B (zh) |
WO (1) | WO2011149678A2 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101685150B1 (ko) * | 2011-01-14 | 2016-12-09 | 주식회사 원익아이피에스 | 박막 증착 장치 및 이를 포함한 기판 처리 시스템 |
US20130171350A1 (en) * | 2011-12-29 | 2013-07-04 | Intermolecular Inc. | High Throughput Processing Using Metal Organic Chemical Vapor Deposition |
CN102534567B (zh) * | 2012-03-21 | 2014-01-15 | 中微半导体设备(上海)有限公司 | 控制化学气相沉积腔室内的基底加热的装置及方法 |
KR101881894B1 (ko) * | 2012-04-06 | 2018-07-26 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 그것을 이용한 박막 증착 방법 |
DE102012104475A1 (de) | 2012-05-24 | 2013-11-28 | Aixtron Se | Carousel-Reactor |
US20130323422A1 (en) * | 2012-05-29 | 2013-12-05 | Applied Materials, Inc. | Apparatus for CVD and ALD with an Elongate Nozzle and Methods Of Use |
CN103022260B (zh) * | 2012-12-28 | 2015-07-08 | 英利能源(中国)有限公司 | 一种调整减反射膜厚度和折射率的方法 |
US9232569B2 (en) * | 2013-02-27 | 2016-01-05 | Applied Materials, Inc. | Solid state light source assisted processing |
US9373551B2 (en) * | 2013-03-12 | 2016-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Moveable and adjustable gas injectors for an etching chamber |
EP3184666B1 (en) * | 2015-12-23 | 2018-06-13 | Singulus Technologies AG | System and method for gas phase deposition |
US11261538B1 (en) * | 2020-09-21 | 2022-03-01 | Applied Materials, Inc. | In-situ temperature mapping for epi chamber |
CN114855271A (zh) * | 2022-04-22 | 2022-08-05 | 浙江求是半导体设备有限公司 | 外延生长装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3805736A (en) * | 1971-12-27 | 1974-04-23 | Ibm | Apparatus for diffusion limited mass transport |
US5788777A (en) * | 1997-03-06 | 1998-08-04 | Burk, Jr.; Albert A. | Susceptor for an epitaxial growth factor |
US6578515B2 (en) * | 2000-09-20 | 2003-06-17 | Fuji Daiichi Seisakusho Co., Ltd. | Film formation apparatus comprising movable gas introduction members |
Family Cites Families (30)
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US3602192A (en) * | 1969-05-19 | 1971-08-31 | Ibm | Semiconductor wafer processing |
US4262131A (en) * | 1979-04-02 | 1981-04-14 | The Upjohn Company | 19-Hydroxy-inter-phenylene-PG1 componds |
US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
US4823736A (en) * | 1985-07-22 | 1989-04-25 | Air Products And Chemicals, Inc. | Barrel structure for semiconductor epitaxial reactor |
US5366554A (en) * | 1986-01-14 | 1994-11-22 | Canon Kabushiki Kaisha | Device for forming a deposited film |
US5119760A (en) * | 1988-12-27 | 1992-06-09 | Symetrix Corporation | Methods and apparatus for material deposition |
JPH0945624A (ja) | 1995-07-27 | 1997-02-14 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
JPH1050613A (ja) | 1996-07-30 | 1998-02-20 | Sony Corp | エピタキシャル成長装置 |
AU5461998A (en) * | 1996-11-27 | 1998-06-22 | Emcore Corporation | Chemical vapor deposition apparatus |
AT408930B (de) | 1999-01-13 | 2002-04-25 | Thallner Erich | Vorrichtung zur chemischen behandlung von wafern |
US6682288B2 (en) * | 2000-07-27 | 2004-01-27 | Nexx Systems Packaging, Llc | Substrate processing pallet and related substrate processing method and machine |
JP4921652B2 (ja) | 2001-08-03 | 2012-04-25 | エイエスエム インターナショナル エヌ.ヴェー. | イットリウム酸化物およびランタン酸化物薄膜を堆積する方法 |
JP3836696B2 (ja) * | 2001-08-31 | 2006-10-25 | 株式会社東芝 | 半導体製造システムおよび半導体装置の製造方法 |
ITMI20011881A1 (it) * | 2001-09-07 | 2003-03-07 | L P E S P A | Suscettori dotato di dispositivi di controllo della crescita epitassiale e reattore epitassiale che utilizza lo stesso |
US6843892B1 (en) * | 2002-02-19 | 2005-01-18 | Seagate Technology Llc | Apparatus and method for selectively and controllably electrically biasing a plurality of substrates on a pallet |
US6886244B1 (en) * | 2002-02-25 | 2005-05-03 | Seagate Technology Llc | Segmented pallet for disk-shaped substrate electrical biassing and apparatus comprising same |
WO2004013373A2 (en) * | 2002-08-02 | 2004-02-12 | Seagate Technology Llc | Apparatus and method to control bias during sputtering |
US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US7129168B2 (en) | 2002-10-30 | 2006-10-31 | Matsushita Electric Industrial Co., Ltd. | Method of estimating substrate temperature |
KR20040046042A (ko) | 2002-11-26 | 2004-06-05 | (주) 윈테크 | 원자층 증착 방식을 수행하기 위한 종형열처리 장치의보트 및 프로세스튜브 구조 |
EP1592053B1 (en) * | 2003-02-05 | 2011-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Wiring fabricating method |
US7828929B2 (en) * | 2004-12-30 | 2010-11-09 | Research Electro-Optics, Inc. | Methods and devices for monitoring and controlling thin film processing |
US7691204B2 (en) | 2005-09-30 | 2010-04-06 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
DE102005055252A1 (de) * | 2005-11-19 | 2007-05-24 | Aixtron Ag | CVD-Reaktor mit gleitgelagerten Suszeptorhalter |
CN102505115B (zh) | 2007-03-02 | 2014-09-03 | 欧瑞康太阳能股份公司(特吕巴赫) | 真空涂覆装置 |
US8092599B2 (en) | 2007-07-10 | 2012-01-10 | Veeco Instruments Inc. | Movable injectors in rotating disc gas reactors |
US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
CN105420688B (zh) | 2008-12-04 | 2019-01-22 | 威科仪器有限公司 | 用于化学气相沉积的进气口元件及其制造方法 |
US9169562B2 (en) * | 2010-05-25 | 2015-10-27 | Singulus Mocvd Gmbh I. Gr. | Parallel batch chemical vapor deposition system |
US9869021B2 (en) * | 2010-05-25 | 2018-01-16 | Aventa Technologies, Inc. | Showerhead apparatus for a linear batch chemical vapor deposition system |
-
2010
- 2010-05-25 US US12/787,082 patent/US8986451B2/en not_active Expired - Fee Related
-
2011
- 2011-05-12 KR KR1020157018457A patent/KR20150085137A/ko not_active Application Discontinuation
- 2011-05-12 KR KR1020127033164A patent/KR20130055623A/ko active Application Filing
- 2011-05-12 WO PCT/US2011/036167 patent/WO2011149678A2/en active Application Filing
- 2011-05-12 CN CN201180033855.9A patent/CN102985592B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3805736A (en) * | 1971-12-27 | 1974-04-23 | Ibm | Apparatus for diffusion limited mass transport |
US5788777A (en) * | 1997-03-06 | 1998-08-04 | Burk, Jr.; Albert A. | Susceptor for an epitaxial growth factor |
US6578515B2 (en) * | 2000-09-20 | 2003-06-17 | Fuji Daiichi Seisakusho Co., Ltd. | Film formation apparatus comprising movable gas introduction members |
Also Published As
Publication number | Publication date |
---|---|
CN102985592A (zh) | 2013-03-20 |
US20110293831A1 (en) | 2011-12-01 |
KR20130055623A (ko) | 2013-05-28 |
WO2011149678A2 (en) | 2011-12-01 |
KR20150085137A (ko) | 2015-07-22 |
WO2011149678A3 (en) | 2012-04-19 |
US8986451B2 (en) | 2015-03-24 |
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SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SINGULUS METAL ORGANIC CHEMICAL VAPOR PHASE DEPOSI Free format text: FORMER OWNER: AVENTA SYSTEMS LLC Effective date: 20150407 |
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