CN102977798B - Adhesive and connecting structure using the same - Google Patents

Adhesive and connecting structure using the same Download PDF

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Publication number
CN102977798B
CN102977798B CN201210425130.0A CN201210425130A CN102977798B CN 102977798 B CN102977798 B CN 102977798B CN 201210425130 A CN201210425130 A CN 201210425130A CN 102977798 B CN102977798 B CN 102977798B
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China
Prior art keywords
adhesive
methyl
circuit
circuit member
compound
Prior art date
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Expired - Fee Related
Application number
CN201210425130.0A
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Chinese (zh)
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CN102977798A (en
Inventor
宫泽笑
加藤木茂树
伊泽弘行
白坂敏明
富泽惠子
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Showa Denko Materials Co ltd
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Hitachi Chemical Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H—ELECTRICITY
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

The invention provides an adhesive and a connecting structure using the same. The adhesive used for connecting circuit blocks contains (a) a thermoplastic resin, (b) a radical polymerizable compound, (c) a radical polymerization initiator, (d) a vinyl compound containing at least more than one phosphate and a urethane (methyl) acrylate oligomer. The radical polymerizable compound is in a solid-state at a temperature of 30 DEG C or below and comprises an epoxy acrylate, and the content of the radical polymerizable compound is 5-100 parts by mass relatively to 100 parts by mass of (a) the thermoplastic resin.

Description

Caking agent and use the connection structural bodies of this caking agent
The present invention is application number be 200880105355X(international application no is PCT/JP2008/065570), the divisional application of the patent application that the applying date, to be August 29, denomination of invention in 2008 be " caking agent and use the connection structural bodies of this caking agent ".
Technical field
The present invention relates to a kind of caking agent, and use the connection structural bodies of circuit block of this caking agent.
Background technology
In semiconductor element and liquid crystal display device, in order to make the various parts bondings in element, use various caking agent all the time.For caking agent used in this purposes, first require bonding strength, and many-sided characteristic such as connection reliability of (such as, 85 DEG C/85%RH) under requiring thermotolerance, hot and humid environment.In addition, as bonded object used time bonding, be mainly the organic substrate such as printed-wiring board (PWB) and polyimide, and the metal such as copper, aluminium and ITO, Si can be used 3n 4, SiO 2etc. the base material with kinds of surface state.Therefore, the molecular designing being applicable to the caking agent of various bonded object is necessary.
All the time, as above-mentioned semiconductor element and caking agent used for liquid crystal display element, the thermosetting resin employed containing the epoxy resin demonstrating high-adhesive-strength and high connecting reliability is used (such as, see patent documentation 1).As thermosetting resin, usually use containing epoxy resin, have and the solidifying agent such as reactive resol of epoxy resin and the material of hot potentiality catalyzer as constituent promoting epoxy resin and solidifying agent reaction.
Hot potentiality catalyzer is the important factor determining solidification value and curing speed, and the package stability under room temperature and curing speed when heating, it can use various compound.In the operation of reality, by 170 ~ 250 DEG C, be cured under the condition of cure of 1 ~ 3 hour, and obtain the bonding strength of wishing.
But along with the high-precision refinement of highly integrated, the liquid crystal cell of recent semiconductor element, the spacing between element and between circuit constantly narrows, and heating when therefore solidifying causes creating disadvantageous effect to circumferential component.In addition, in order to cost degradation, and need to improve turnout, and require at lower temperatures and solidify at short notice, that is, require low-temperature fast-curing bonding.Low-temperature fast-curing in order to realize this, the hot potentiality catalyzer that activation evergy is low must be used, however, it is known that it is low and in these two kinds of performances of package stability of near room temperature to be difficult to have concurrently activation evergy.
To this, recently, just receive publicity using the free-radical polymerised compound such as acrylate derivative or methacrylate derivative with as the radical-curable caking agent that the superoxide of radical polymerization initiator is combined.Radical-curable caking agent, because the reactivity wherein as the free radical of reactive behavior seed is strong, therefore can solidify (such as, see patent documentation 2) at short notice.In addition, also proposed the radical-curable caking agent using ammonia ester acrylic compound as free-radical polymerised compound, wherein said ammonia ester acrylic compound has been endowed flexibility and flexible (see patent documentation 3,4) by ester bond.
Patent documentation 1: Japanese Unexamined Patent Publication 1-113480 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2002-203427 publication
Patent documentation 3: Japanese Unexamined Patent Publication 2001-262079 publication
Patent documentation 4: Japanese Unexamined Patent Publication 2002-285128 publication
Summary of the invention
The problem that invention will solve
But radical-curable caking agent in the past described in patent documentation 2 grade, because cure shrinkage during solidification is large, therefore compares with during use epoxy resin, has the problem of bonding strength difference.
In addition, the radical-curable caking agent of use ammonia ester acrylate described in patent documentation 3,4 etc., owing to having ester bond in molecule, therefore has the caking agent physical property such as the spring rate after solidification and second-order transition temperature and declines, and water-intake rate rises, the problem that hydrolytic resistance declines.Therefore, when its caking agent for semiconductor element and liquid crystal display device, have under hot and humid environment (such as, 85 DEG C/85%RH) and the problem of enough connection reliability cannot be obtained.
Further, above-mentioned ammonia ester acrylate is at room temperature low viscous aqueous, and therefore when it is used as the gradation composition of film-like adhesive, the surface glue viscous force of the gluing degree of known presentation surface increases, and has problem in operability.
The present invention carries out in view of the problem existing for above-mentioned conventional art, its objective is provide one at low temperatures in the short period of time (such as, 10 seconds kinds at 160 DEG C) solidification, the connection structural bodies of the circuit block with excellent bonding strength can be obtained when junction circuit parts and the caking agent that the connection reliability that can fully suppress the connection structural bodies of gained under hot and humid environment reduces, operability is also excellent in addition, and use the connection structural bodies of circuit block of this caking agent.
In addition, in this specification sheets, so-called " can fully suppress the connection reliability of connection structural bodies under hot and humid environment to reduce ", even if to refer under hot and humid environment in long situation, also the reduction of the bonding strength between circuit block can fully be suppressed, and the rising of contact resistance between relative splicing ear.
The method of dealing with problems
To achieve these goals, the invention provides a kind of caking agent, it contains (a) thermoplastic resin, (b) free-radical polymerised compound, and (c) radical polymerization initiator, and wherein (b) free-radical polymerised compound is solid below 30 DEG C.
According to caking agent of the present invention, can to solidify in the short period of time at low temperature, the connection structural bodies of the circuit block with excellent bonding strength can be obtained when being connected to circuit block, and can fully suppress the connection reliability of the connection structural bodies of gained under hot and humid environment to reduce, operability is also excellent in addition.Although it is not yet clear and definite to use caking agent of the present invention can obtain the reason of these effects, but can think, b () free-radical polymerised compound exists with solid under service temperature (such as, less than 30 DEG C), thus to relatively reduce liquid-like constituents be one of reason.
Caking agent of the present invention, preferably has the vinyl compound of at least more than one phosphate further in molecule containing (d).Thus, under the condition of cure of short period of time, more excellent bonding strength can be obtained at low temperature.
A () thermoplastic resin is preferably containing at least one resin being selected from phenoxy resin, vibrin, urethane resin, polyester urethane resin, butyral resin, acrylic resin, polyimide resin.Thus, the reduction of the bonding strength under hot and humid environment after long-time can be suppressed more fully.
Caking agent of the present invention, preferably further containing (e) electroconductive particle.Thus, due to electroconductibility or anisotropic conductive can be given to caking agent, therefore suitably caking agent can be used according to the circuit block connection purposes etc. each other with splicing ear.In addition, can fully be decreased through above-mentioned caking agent electrical connection splicing ear between contact resistance.
In addition, the invention provides a kind of connection structural bodies of circuit block, its be, first circuit block with the first splicing ear is configured to make described first splicing ear relative with described second splicing ear with the second circuit parts with the second splicing ear, between described first splicing ear making the caking agent of the invention described above be present in subtend configuration and described second splicing ear, carry out heating and pressurizing, described first splicing ear and described second splicing ear electrical connection are formed.
This connection structural bodies, owing to using the caking agent of the invention described above, therefore fully can improve the bonding strength of circuit block, and fully can suppress the reduction of the connection reliability under hot and humid environment.
Invention effect
According to the present invention, the connection structural bodies that can provide a kind of and solidify at low temperature and in the short period of time, the circuit block with excellent bonding strength can be obtained when junction circuit parts and the caking agent that the connection reliability that can fully suppress the connection structural bodies of gained under hot and humid environment reduces, operability is also excellent in addition, and the connection structural bodies of circuit block using this caking agent.
The simple declaration of accompanying drawing
[Fig. 1] represents the summary sectional view of a kind of embodiment of the connection structural bodies of circuit block of the present invention.
Nomenclature
7 ... electroconductive particle, 10 ... electric circuit connection member, 11 ... resin, 20,30 ... circuit block, 21,31 ... circuit substrate, 22,32 ... circuit electrode.
Embodiment
Below, the preferred embodiment of the present invention is described in detail.In addition, in this manual, " fusing point " refers to the exothermal peak temperature of the Differential Scanning Calorimetry mensuration curve being measured gained by Differential Scanning Calorimetry.In addition, above-mentioned Differential Scanning Calorimetry measures, and (Perkinelmer Inc. manufactures such as can to use differential scanning calorimeter, Pyris DSC7), pass into air with the flow of 10mL/min, and after keeping at 25 DEG C, carry out under the condition being warming up to 120 DEG C with 10 DEG C/min.
As (a) used in the present invention thermoplastic resin, be not particularly limited, can well known materials be used.As this polymkeric substance, polyimide, polymeric amide, phenoxy resin class, poly-(methyl) esters of acrylic acid, polyimide, polyurethanes, polyester, PAUR class, polyvinyl butyral class, vinyl-vinyl acetate copolymer etc. can be used.These polymkeric substance, can be used alone as required, or two or more is used in combination.Further, siloxane bond or fluoro substituents can be contained in these polymkeric substance.These polymkeric substance, as long as the resin of mixing is completely compatible each other, or produce the state that microphase-separated forms muddiness, just can use well.The molecular weight of above-mentioned polymkeric substance is larger, then more easily obtain film-forming properties, and the melt viscosity had an impact to the mobility being used as caking agent can be set as relative broad range.Molecular weight is not particularly limited, but weight-average molecular weight is preferably 5,000 ~ 500,000 usually, and is more preferably 10,000 ~ 100,000.When this value is less than 5, when 000, film-forming properties has the tendency of variation, and when it is more than 500, when 000, and the consistency of other composition has the tendency of variation.
As (b) used in the present invention free-radical polymerised compound; can be have in styrene derivatives, maleimide derivatives or molecule more than one acryl or methacryloyl (after; be called (methyl) acryl) compound; as long as and be the material of solid below 30 DEG C; just be not particularly limited, can well known materials be used.
Herein, " being solid below 30 DEG C ", refer to when above-claimed cpd is left standstill separately below 30 DEG C, be shown as the solid state that wax-like, wax-like, lenticular, glassy, powdery etc. do not have mobility, or above-mentioned Differential Scanning Calorimetry mensuration is carried out to above-claimed cpd, its fusing point is more than 30 DEG C.
As the object lesson of (b) free-radical polymerised compound, N can be enumerated, N '-methylene diacrylamine, two acetone acrylic acid amides, N hydroxymethyl acrylamide, N-phenyl methacrylamide, 2-acrylamide-2-methyl propane sulfonic acid, three (2-acryloyl-oxyethyl) isocyanuric acid ester, N-phenylmaleimide, N-o-tolyl maleimide, tolylmaleimide between N-, N-p-methylphenyl maleimide, N-(o-methoxyphenyl) maleimide, N-(m-methoxyphenyl) maleimide, N-(p-methoxyphenyl) maleimide, N-methylmaleimido, NEM, N-octyl group maleimide, 4,4 '-ditan dimaleimide, metaphenylene dimaleimide, 3,3 '-dimethyl-5,5 '-diethyl-4,4 '-ditan dimaleimide, 4-methyl isophthalic acid, 3-phenylene dimaleimide, N-methacryloxy maleimide, N-acryloxy maleimide, 1,6-dimaleimide-(2,2,4-trimethylammonium) hexane, N-methacryloxy bromosuccinimide, N-acryloxy bromosuccinimide, 2-naphthyl methacrylate, 2-naphthyl acrylate, tetramethylol methane tetraacrylate, divinyl ethylidene urea, divinyl propylidene urea, caprolactam, vinylcarbazole, 2-polystyrylmethyl ethyl propenoate, N-phenyl-N '-(3-methacryloxy-2-hydroxypropyl)-P-pHENYLENE dI AMINE, N-phenyl-N '-(3-acryloxy-2-hydroxypropyl)-P-pHENYLENE dI AMINE, two (4-ethenylphenyl) sulfone, 2-tert.-butoxy-6-vinyl naphthalene, tetramethyl piperidine methacrylic ester, tetramethyl piperidine acrylate, pentamethvl methacrylic ester, pentamethvl acrylate, octadecyl acrylate, N tert butyl acrylamide, diacetone acrylamide, N-hydroxymethylacrylate acid amides, compound represented by following general formula (A) ~ (J).In these compounds, from the viewpoint of rapidly-curable, preferably have the compound of (methyl) acryl, from the viewpoint of curability at low temperatures and operability, preferred fusing point is the compound of 50 ~ 100 DEG C.These compounds, can be used alone as required, or used in combination.
[changing 1]
(herein, l represents the integer of 1 ~ 10.）
[changing 2]
[changing 3]
(herein, R1 represents hydrogen or methyl, and R2 represents hydrogen or methyl, and m represents the integer of 15 ~ 30.）
[changing 4]
(herein, R3 represents hydrogen or methyl, and R4 represents hydrogen or methyl, and n represents the integer of 15 ~ 30.）
[changing 5]
(herein, R5 represents hydrogen or methyl.）
[changing 6]
(herein, R6 represents hydrogen or methyl, and o represents the integer of 1 ~ 10.）
[changing 7]
(herein, R7 represents hydrogen or the organic group shown in following general formula (a) and (b), and p represents the integer of 1 ~ 10.）
[changing 8]
[changing 9]
[changing 10]
(herein, R8 represents hydrogen or following general formula (c), the organic group shown in (d), and q represents the integer of 1 ~ 10.）
[changing 11]
[changing 12]
[changing 13]
(herein, R9 represents hydrogen or methyl.）
[changing 14]
(herein, R10 represents hydrogen or methyl.）
B the addition of () free-radical polymerised compound, relative to 100 mass parts (a) thermoplastic resins, is preferably 1 ~ 200 mass parts, is more preferably 5 ~ 100 mass parts.When addition is less than 1 mass parts, the thermotolerance after solidification declines, and simultaneously along with the tackiness on film surface increases, operability declines.In addition, when it is more than 200 mass parts, when being used as film, film-forming properties declines, and the film quality simultaneously after solidification becomes fragile, and bonding force reduces.In the present invention, as the index of operability, surface glue viscous force when can be used in 25 ~ 30 DEG C, and, consider from the operability of caking agent and the temporary fixed property viewpoint of bonded object, wish that surface glue viscous force is below 50gf.
As (c) used in the present invention radical polymerization initiator, the known compound such as known superoxide or azo-compound can be used, from the viewpoint of stability, reactivity, consistency, preferably 1 minute half life temperature is 90 ~ 175 DEG C, and molecular weight is the superoxide of 180 ~ 1,000.As the object lesson of this (c) radical polymerization initiator, 1,1,3,3-tetramethyl butyl new decanoate ester peroxide can be enumerated, two (4-tert-butylcyclohexyl) peroxy dicarbonate, two (2-ethylhexyl) peroxy dicarbonate, cumyl new decanoate ester peroxide, 1,1,3,3-tetramethyl butyl new decanoate ester peroxide, dilauroyl peroxide, 1-cyclohexyl-1-methylethyl new decanoate ester peroxide, tertiary hexyl new decanoate ester peroxide, tert-butyl hydroperoxide neodecanoic acid ester, t-butylperoxy-valerate, 1，1，3，3-tetra-methylbutyl peroxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis-(2-ethylhexanoyl-peroxy) hexane, tertiary hexyl peroxidation-2-ethylhexanoate, tert-butyl hydroperoxide-2-ethylhexanoate, the new heptanoate of tert-butyl hydroperoxide, t-amyl peroxy-2-ethylhexanoate, di-tert-butyl peroxide six hydrogen terephthalate, t-amyl peroxy-3,5,5 Trimethylhexanoic acid ester, 3-hydroxyl-1,1-dimethylbutyl new decanoate ester peroxide, 1，1，3，3-tetra-methylbutyl peroxy-2-ethylhexanoate, t-amyl peroxy neodecanoic acid ester, t-amyl peroxy-2-ethylhexanoate, two (3-methyl benzoyl) superoxide, dibenzoyl peroxide, two (4-methyl benzoyl) superoxide, 2,2 '-azo two-2,4-methyl pentane nitrile, 1,1 '-azo two (1-acetoxyl group-1-diphenylphosphino ethane), 2,2 '-Diisopropyl azodicarboxylate, 2,2 '-azo two (2-methylbutyronitrile), dimethyl-2,2 '-Diisopropyl azodicarboxylate, 4,4 '-azo two (4-cyanopentanoic acid), 1,1 '-azo two (1-cyclohexane nitrile), tertiary hexyl isopropyl peroxide monocarbonate, tert-butyl hydroperoxide toxilic acid, tert-butyl hydroperoxide-3,5,5 Trimethylhexanoic acid ester, tert-butyl hydroperoxide laurate, 2,5-dimethyl-2,5-bis-(peroxidation of 3-methyl benzoyl) hexane, tert-butyl hydroperoxide-2-ethylhexyl monocarbonate, tertiary hexyl peroxide benzoate, 2,5-dimethyl-2,5-bis-(benzoylperoxy) hexane, tert butyl peroxy benzoate, dibutyl peroxidation trimethyladipic acid ester, t-amyl peroxy n-caprylic acid ester, the different pelargonate of t-amyl peroxy, t-amyl peroxy benzoic ether etc.These compounds, can be used alone, or compound of more than two kinds are used.
In addition, as (c) used in the present invention radical polymerization initiator, the compound of free radical under the rayed of 150 ~ 750nm can also be used in, is produced.As this compound, be not particularly limited, can known compound be used, such as, Photoinitiation, Photopolymerization, and Photocuring, J.-P.Fouassier, Hanser Publishers(1995), alpha-acetamido-amphyl described in p17 ~ p35 and phosphinoxide high for light-struck sensitivity, therefore more preferably.These compounds can be used alone, or with above-mentioned superoxide or azo-compound used in combination.
The addition of (c) of the present invention radical polymerization initiator, relative to 100 mass parts (a) thermoplastic resins, is preferably 0.1 ~ 30 mass parts, and more preferably 2 ~ 20 mass parts.When radical polymerization initiator is less than 0.1 mass parts, solidification is not enough, and when it is more than 30 mass parts, shelf-stability declines.
There is in molecule as (d) used in the present invention the vinyl compound of at least more than one phosphate; be not particularly limited; known material can be used, more preferably there is phosphoric acid (methyl) acrylic compound of (methyl) acryl as vinyl of at least more than one free-radical polymerised excellence in molecule.As this compound, the compound shown in following general formula (K) ~ (M) can be enumerated.
[changing 15]
(herein, R11 represents acryloxy or methacryloxy, and R12 represents hydrogen or methyl, and r, s represent the integer of 1 ~ 8 independently.）
[changing 16]
(herein, R13 represents acryloxy or methacryloxy, and t, u, v represent the integer of 1 ~ 8 independently.）
[changing 17]
(herein, R14 represents acryloxy or methacryloxy, and R15 represents hydrogen or methyl, and w, x represent the integer of 1 ~ 8 independently.）
There is in molecule as (d) object lesson of the vinyl compound of at least more than one phosphate, acid phosphonooxyethyl methacrylic ester can be enumerated, acid phosphonooxyethyl acrylate, acid phosphorus acyloxy propyl methacrylate, acid phosphorus acyloxy polyoxyethylene glycol monomethacrylates, acid phosphorus acyloxy polyoxypropylene glycol monomethacrylates, 2-(methyl) acryloyl-oxyethyl phosphoric acid ester, 2, 2 '-two (methyl) acryloxy diethylphosphate, EO modified phosphate dimethacrylate, phosphoric acid modification epoxy acrylate, phosphoric acid ethene alcohol ester etc.
When interpolation (d) has the vinyl compound of at least more than one phosphate in molecule, its addition, relative to 100 mass parts (a) thermoplastic resins, is preferably 0.05 ~ 30 mass parts, is more preferably 0.1 ~ 20 mass parts.When addition is less than 0.05 mass parts, be difficult to obtain high-adhesive-strength, and when it is more than 30 mass parts, the caking agent physical property after solidification significantly reduces, reliability may decline.
As (e) used in the present invention electroconductive particle, metallics or the carbon etc. such as Au, Ag, Ni, Cu, scolding tin can be enumerated.In addition, can also be with dielectric glass, pottery, plastics etc. for core, and on this core, be coated with the material of above-mentioned metal, metallics or carbon.Take plastics as core when electroconductive particle, and when being coated with material or the hot molten metal particle of above-mentioned metal, metallics or carbon on this core, owing to there is deformability under heating and pressurizing, therefore connect time and electrode contact area increase, reliability improves, therefore preferably.In addition, further with the particulate of the surperficial gained of these electroconductive particles coating such as macromolecule resin, when increasing electroconductive particle use level, can suppress because of particle contact each other and the short circuit produced, improve the insulativity between telegraph circuit, therefore can suitably be used alone, or used in combination with electroconductive particle.
Be somebody's turn to do the median size of (e) electroconductive particle, from the viewpoint of dispersed, electroconductibility, be preferably 1 ~ 18 μm.
E the addition of () electroconductive particle, is not particularly limited, with the cumulative volume of adhesive composite for benchmark, be preferably 0.1 ~ 30 volume %, be more preferably 0.1 ~ 10 volume %.When this value is less than 0.1 volume %, have the tendency that electroconductibility is deteriorated, when it is more than 30 volume %, have the tendency producing short circuit.In addition, volume % be based on solidification when 23 DEG C before the volume of each composition determine that the volume of each composition can utilize proportion to be scaled volume by weight.In addition, can also will not dissolve or this composition of swelling, but the appropriate solvent (water, alcohol etc.) that can soak this composition well puts into graduated cylinder, then add this composition, obtain the volume of increase, and it can be used as described volume.
In order to improve crosslinking rate and the toughness guaranteeing cured article, caking agent of the present invention, be the above-mentioned free-radical polymerised compound of solid below 30 DEG C while, suitably can also add multifunctional (methyl) acrylic compound.
As the object lesson of multifunctional (methyl) acrylic compound, epoxy group(ing) (methyl) origoester acrylate can be enumerated, urethane (methyl) origoester acrylate, polyethers (methyl) origoester acrylate, the oligopolymer such as polyester (methyl) origoester acrylate, trimethylolpropane tris (methyl) acrylate, polyoxyethylene glycol two (methyl) acrylate, polyalkylene glycol two (methyl) acrylate, dicyclopentenyl (methyl) acrylate, dicyclopentenyl oxygen base ethyl (methyl) acrylate, neopentyl glycol two (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, isocyanuric acid modification 2 official energy (methyl) acrylate, isocyanuric acid modification 3 official energy (methyl) acrylate, two phenoxyethyl alcohol fluorenes acrylate, addition (methyl) acrylic acid epoxy group(ing) (methyl) acrylate on the glycidyl of bisphenol fluorene diglycidylether, addition ethylene glycol or propylene glycol on the glycidyl of bisphenol fluorene diglycidylether and in the compound that obtains, import the compound of (methyl) acryloxy, following general formula (N), (O) compound shown in etc. multifunctional (methyl) acrylic compound.These compounds can be used alone as required, or used in combination.
[changing 18]
(herein, R16 represents hydrogen or methyl, and R17 represents hydrogen or methyl, and y represents the integer of 1 ~ 8, and z represents the integer of 1 ~ 8.）
[changing 19]
(herein, R18 represents hydrogen or methyl, and R19 represents hydrogen or methyl, and a represents the integer of 1 ~ 8, and b represents the integer of 0 ~ 8.）
In order to control curing speed further and improve package stability, suitably stablizer can be added in caking agent of the present invention.As this stablizer, be not particularly limited, known compound can be used, the phenol derivativess, 2 such as the quinone derivatives such as preferred benzoquinones, quinhydrones, 4-methoxyphenol, 4-tert-butyl catechol, 2,6,6-tetramethyl piperidine-1-oxygen base, 4-hydroxyl-2, aminooxy (aminoxyl) derivatives such as 2,6,6-tetramethyl piperidine-1-oxygen base, tetramethyl piperidine methyl acrylate equipotential resistance sulfonamide derivatives.
When adding stablizer, its addition, relative to 100 mass parts (a) thermoplastic resins, is preferably 0.01 ~ 30 mass parts, is more preferably 0.05 ~ 10 mass parts.When addition is less than 0.01 mass parts, additive effect may significantly decline, and when it is more than 30 mass parts, and the consistency of other composition may decline.
In caking agent of the present invention, can also suitably add with alkoxyl silicone alkane derivatives or the silazane derivatives bonding auxiliary agent such as coupling agent and adhesion promoters, flow agent, urea resin, melamine resin that is representative.As bonding auxiliary agent, be preferably the compound shown in following general formula (P), and they can be used alone, or compound of more than two kinds is used.
[changing 20]
(herein, R20, R21, R22 represent that hydrogen, carbon number are alkyl, the carbon number alkoxyl group that is 1 ~ 5, carbon number be 1 ~ 5 alkoxy carbonyl, the aryl of 1 ~ 5 independently, R23 represents (methyl) acryloxy, vinyl, isocyanate group, imidazolyl, sulfydryl, amino, methylamino, dimethylamino, benzylamino, phenyl amino, Cyclohexylamino, morpholinyl, piperazinyl, uride base, glycidyl, c represents the integer of 1 ~ 10.）
In order to relax stress and improve cementability, in caking agent of the present invention, rubber constituent can be added.As the object lesson of rubber constituent, polyisoprene can be enumerated, polyhutadiene, C-terminal polyhutadiene, C-terminal polyhutadiene, 1, 2-polyhutadiene, C-terminal 1, 2-polyhutadiene, C-terminal 1, 2-polyhutadiene, acrylic rubber, styrene butadiene rubbers, C-terminal styrene butadiene rubbers, acrylonitrile-butadiene rubber, carboxyl is contained in polymer ends, hydroxyl, the acrylonitrile-butadiene rubber of (methyl) acryl or morpholinyl, carboxylated nitrile rubber, C-terminal gathers (oxypropylene), alkoxysilyl end gathers (oxypropylene), poly-(oxygen tetramethylene) glycol, polyolefin diols, poly-epsilon-caprolactone, acrylic rubber.
As above-mentioned rubber constituent, improve from the viewpoint of cementability, be preferably and contain as the cyano group of high polar group, the rubber constituent of carboxyl on side chain or end, further, improve from the viewpoint of mobility, be more preferably aqueous rubber.
As the object lesson of aqueous rubber; aqueous acrylonitrile-butadiene rubber can be enumerated; the aqueous acrylonitrile-butadiene rubber of carboxyl, hydroxyl, (methyl) acryl or morpholinyl is contained in polymer ends; aqueous carboxylated nitrile rubber, the acrylonitrile content preferably as polar group is the rubber of 10 ~ 60%.These compounds can be used alone, or compound of more than two kinds are used.
Caking agent of the present invention, when being at room temperature aqueous, can use with pasty state.When being at room temperature solid, except heating uses, solvent can also be used to use after its gelatinization.As available solvent, as long as do not have reactivity with adhesive composite and additive, and demonstrate sufficient deliquescent material, be just not particularly limited, preferably boiling point is at ambient pressure the solvent of 50 ~ 150 DEG C.When boiling point is less than 50 DEG C, may volatilizees when at room temperature placing, thus use in open system and be restricted.In addition, when boiling point is more than 150 DEG C, solvent is difficult to volatilization, may produce detrimentally affect to the reliability after bonding.
Caking agent of the present invention can also form membranaceous use.Adhesive composite, can by the solution coat of solvent etc. will be added as required on the separability base materials such as fluororesin film, polyethylene terephthalate film, release paper, or make the base materials such as above-mentioned solution impregnation non-woven fabrics, and be placed on separability base material, except desolventizing etc., thus formation film uses.When using with the shape of film, consider from viewpoints such as operability, more convenient.
Above-mentioned caking agent, by heating and pressurize and use, can make bonded object bonding.Heating temperature is not particularly limited, and such as, can be 100 ~ 250 DEG C, in order to fully suppress the detrimentally affect produced peripheral parts because of heating during solidification, is preferably 100 ~ 180 DEG C.Pressure, as long as the scope that can not produce damage to bonded object, is just not particularly limited, is usually preferably 0.1 ~ 10MPa.The time of these heating and pressurization, can be 0.5 second ~ 120 seconds, from the viewpoint of cost degradation, preferably 0.5 second ~ 10 seconds.Such as, can by 140 ~ 200 DEG C, 3MPa, the heating in 10 seconds carry out bonding.
Caking agent of the present invention, can be used as the caking agent of the different bonded object not of the same race of thermal expansivity.Specifically, anisotropically conducting adhesive can be used as, with the circuit connection material that silver paste, silverskin etc. are representative, underfill material at the bottom of CSP elastomerics, CSP, chips welding (die bonding) film, chips welding paste etc. are the semiconductor element adhesives of representative.
The connection structural bodies of circuit block of the present invention, that first circuit block with the first splicing ear is configured to make the first splicing ear relative with the second splicing ear with the second circuit parts with the second splicing ear, between the first splicing ear making above-mentioned caking agent be present in subtend configuration and the second splicing ear, carry out heating and pressurizing, make the connection structural bodies of the first splicing ear and the electrical connection of the second splicing ear.
Fig. 1 is the summary sectional view of an embodiment of the connection structural bodies representing circuit block of the present invention.As shown in Figure 1, the connection structural bodies of present embodiment, have toward each other to the first circuit block 20 and second circuit parts 30, and between the first circuit block 20 and second circuit parts 30, be provided with the electric circuit connection member 10 they connected.
First circuit block 20, the circuit electrode (the first circuit electrode) 22 that there is circuit substrate (the first circuit substrate) 21 and formed on the interarea 21a of circuit substrate 21.In addition, on the interarea 21a of the first circuit substrate 21, can according to circumstances form insulation layer (not shown).
On the other hand, second circuit parts 30, the circuit electrode (second circuit electrode) 32 that there is circuit substrate (second circuit substrate) 31 and formed on the interarea 31a of circuit substrate 31.In addition, on the interarea 31a of circuit substrate 31, also insulation layer (not shown) can according to circumstances be formed.
As the first and second circuit blocks 20,30, as long as be formed with the electrode needing electrical connection, be just not particularly limited.Specifically, the glass or plastic base, printed-wiring board (PWB), ceramic circuit-board, flex circuit application, the semiconductor silicon chips etc. that are formed electrode by ITO etc. for liquid-crystal display can be enumerated.They can combinationally use as required.In the present embodiment, the main material using printed-wiring board (PWB) and formed by organism such as polyimide, and the metal such as copper, aluminium or ITO(indium tinoxide can be used), silicon nitride (SiN x), silicon-dioxide (SiO 2) etc. inorganic etc. there is the circuit block of kinds of surface state.
Electric circuit connection member 10, is formed by the cured article of above-mentioned caking agent.This electric circuit connection member 10, containing resin 11 and electroconductive particle 7.Electroconductive particle 7 is not only configured between relative circuit electrode 22 and circuit electrode 32, but also is configured between interarea 21a, 31a.In the syndeton of circuit block, circuit electrode 22,32, is electrically connected by electroconductive particle 7.That is, electroconductive particle 7 directly contacts with both circuit electrodes 22,32.
Herein, electroconductive particle 7 is foregoing (e) electroconductive particles, and resin 11 is cured articles of above-mentioned caking agent.
In the syndeton of this circuit block, as mentioned above, relative circuit electrode 22 and circuit electrode 32 are electrically connected by electroconductive particle 7.Therefore, the contact resistance between circuit electrode 22,32 is decreased sufficiently.Thus the electric current between circuit electrode 22,32 can smooth and easyly pass through, and the function that circuit has can be given full play to.In addition, when electric circuit connection member 10 is not containing electroconductive particle 7, by making circuit electrode 22 directly contact with circuit electrode 32, and be electrically connected.
The manufacture method of the connection structural bodies of present embodiment, namely the method for attachment of circuit block 20,30, such as described below.First, above-mentioned caking agent is made to be present between circuit block 20,30.At this moment, circuit block 20,30 is configured to make circuit electrode 22 relative with 32.Then, across circuit block 20,30 caking agent, while pressurize on their stack direction, implement the solidification treatment of caking agent, form electric circuit connection member 10.Solidification treatment, can carry out, and its method suitably can be selected according to caking agent under Heating temperature as escribed above, moulding pressure.
Because the cured article of electric circuit connection member 10 by above-mentioned caking agent is formed, therefore electric circuit connection member 10 fully improves relative to the bonding strength of circuit block 20 or 30, and fully can suppress the reduction of the connection reliability under hot and humid environment.
In addition, although be described for the situation containing electroconductive particle in the above-described embodiment, the connection structural bodies of circuit block of the present invention also can not contain electroconductive particle.When not containing electroconductive particle, be electrically connected by making relative electrode directly contact mutually.
Embodiment
Below, illustrate the present invention based on embodiment, but the present invention is not limited thereto.
[synthesis of urethane resin]
Be the polybutylene adipate diol of 2000 by 450 mass parts weight-average molecular weight, 450 mass parts molecular-weight average be 2000 polytetramethylene glycol and 100 mass parts 1,4-butyleneglycol, be dissolved in 4000 mass parts methylethylketones, and add 390 mass parts diphenylmethanediisocyanates, make it 70 DEG C of reactions 60 minutes, obtain urethane resin.Measured the weight-average molecular weight of the urethane resin of gained by gel permeation chromatography (GPC), result is 100,000.
(embodiment 1 ~ 9, comparative example 1 ~ 3)
As thermoplastic resin, the solids component be dissolved in by above-mentioned urethane resin in the mixed solvent of methylethylketone and toluene is the solution of 30 % by weight, with take solids component as the 40 % by weight phenoxy resin (ZX-1356-2 being dissolved in methylethylketone, Toto Kasei KK's trade(brand)name) or be 40 % by weight be dissolved in the polyester urethane resin (UR-1350, Toyo Boseki K.K's trade(brand)name) in the mixed solvent of methylethylketone and toluene and use with solids component.
As free-radical polymerised compound, be used alone epoxy acrylate (VR-60 and VR-90 for solid at 30 DEG C, Showa Highpolymer Co., Ltd's trade(brand)name), or using the isocyanuric acid EO modified triacrylate (M-215 as aqueous free-radical polymerised compound, Toagosei Co., Ltd's trade(brand)name) and ammonia ester acrylate (KCC of UA6100, Xin Zhong village trade(brand)name) using.
As acidic cpd, use 2-(methyl) acryloyl-oxyethyl phosphoric acid ester (light ester (ラ イ ト エ ス テ Le) P-2M, Co., Ltd. of common prosperity society trade(brand)name).
As radical polymerization initiator, use tertiary hexyl peroxidation-2-ethylhexanoate (PERHEXYL O, NOF Corp's trade(brand)name).
In addition, be produced on polystyrene be core particle surface on be provided with the nickel dam that thickness is 0.2 μm, and have thickness to be the layer gold of 0.02 μm in the arranged outside of this nickel dam, and median size be 4 μm, proportion is the electroconductive particle of 2.5.
Match well conjunction mentioned component with the solid weight shown in following table 1, more above-mentioned electroconductive particle is coordinated dispersion with the amount of 1.5 volume %.Using apparatus for coating, to be coated on thickness be on the fluororesin film of 80 μm, and 70 DEG C of warm air dryings 10 minutes, the thickness obtaining bond layer was the film-like adhesive of the embodiment 1 ~ 9 of 18 μm, comparative example 1 ~ 3.
[table 1]
Use adhesion tester (Co., Ltd. レ ス カ system, LT25A-500) (basal temperature is 30 DEG C), and measure the surface glue viscous force of film-like adhesive of embodiment 1 ~ 9, comparative example 1 ~ 3 according to JISZ-0237.
[mensuration of contact resistance, bonding strength]
By the film-like adhesive of embodiment 1 ~ 9, comparative example 1 ~ 3, be arranged on have that 500 live widths are 25 μm, spacing is 50 μm, thickness is the copper circuit of 12 μm between flex circuit application (FPC) and the glass (thickness is 1.1mm, and surface resistivity is 20 Ω/) being formed with 0.2 μm of Indium sesquioxide (ITO) thin layer.Use hot-press arrangement (type of heating: permanent pattern of fever, Dongli Engineering Co., Ltd manufacture), 160 DEG C, heating and pressurizing 10 second under 3MPa, be that 2mm connects by described material at width, make linker.
After bonding at once and 85 DEG C, the hot and humid middle maintenance of 85%RH is after 168 hours (after test), the resistance value between the adjacent circuit using this linker of multitester measuring.Resistance value represents with the mean value of 37 place's resistance between adjacent circuit.
In addition, according to JIS-Z0237, use 90 degree of stripping methods to measure the bonding strength of this linker, and evaluate.Herein, the determinator of bonding strength, uses Japan ボ ー Le ドウィン Co., Ltd. sky to wish grand (テ Application シ ロ Application) UTM-4(peeling rate 50mm/min, 25 DEG C).The measurement result of the surface glue viscous force of as above carried out film-like adhesive, contact resistance and bonding strength is shown in following table 2.
[table 2]
It can thus be appreciated that, the adhesive composite of embodiment 1 ~ 9 gained, when Heating temperature 160 DEG C, after bonding at once and 85 DEG C, keep 168 hours in the hot and humid groove of 85%RH after (after test), demonstrate the good contact resistance of about 3 below Ω and the good bonding intensity of more than 400N/m.Further, it can thus be appreciated that the surface glue viscous force of the gluing degree of presentation surface is low, operability is excellent.
Known on the contrary, do not use in the present invention is the comparative example 1 of the free-radical polymerised compound of solid at 30 DEG C, and its surface glue viscous force is high, and operability is poor, and in addition, bonding strength is also low.And known, in comparative example 2,3, although show good contact resistance and bonding strength, surface glue viscous force is large, and has problem in operability.

Claims (11)

1. an adhesive for circuit member connection, the free-radical polymerised compound that it contains (a) thermoplastic resin, (b) less than 30 DEG C is solid, (c) radical polymerization initiator, (d) have the vinyl compound of at least more than one phosphate, (e) electroconductive particle and urethane (methyl) origoester acrylate in molecule
B () less than 30 DEG C is that the free-radical polymerised compound of solid comprises epoxy acrylate, (b) less than 30 DEG C is the content of the free-radical polymerised compound of solid is 5 ~ 100/3 mass parts relative to (a) thermoplastic resin of 100 mass parts.
2. adhesive for circuit member connection as claimed in claim 1, wherein, (a) thermoplastic resin contains polyester urethane resin.
3. adhesive for circuit member connection as claimed in claim 1 or 2, wherein, the weight-average molecular weight of (a) thermoplastic resin is 10,000 ~ 100,000.
4. adhesive for circuit member connection as claimed in claim 1 or 2, wherein, (c) radical polymerization initiator be 1 minute half life temperature be 90 ~ 175 DEG C and molecular weight be 180 ~ 1,000 superoxide.
5. adhesive for circuit member connection as claimed in claim 1 or 2, wherein, the addition of (c) radical polymerization initiator is 0.1 ~ 30 mass parts relative to (a) thermoplastic resin of 100 mass parts.
6. adhesive for circuit member connection as claimed in claim 1 or 2; wherein, (d) has the vinyl compound of at least more than one phosphate in molecule is phosphoric acid (methyl) acrylic compound in molecule with at least more than one (methyl) acryl.
7. adhesive for circuit member connection as claimed in claim 6; wherein; described phosphoric acid (methyl) acrylic compound in molecule with at least more than one (methyl) acryl is following general formula (K), (L) or the compound shown in (M)
Herein, R11 represents acryloxy or methacryloxy, and R12 represents hydrogen or methyl, and r, s represent the integer of 1 ~ 8 independently,
Herein, R13 represents acryloxy or methacryloxy, and t, u, v represent the integer of 1 ~ 8 independently,
Herein, R14 represents acryloxy or methacryloxy, and R15 represents hydrogen or methyl, and w, x represent the integer of 1 ~ 8 independently.
8. adhesive for circuit member connection as claimed in claim 1 or 2, wherein, (d) has the addition of the vinyl compound of at least more than one phosphate in molecule is 0.05 ~ 30 mass parts relative to (a) thermoplastic resin of 100 mass parts.
9. adhesive for circuit member connection as claimed in claim 1 or 2, wherein, the addition of (e) electroconductive particle with caking agent cumulative volume for during benchmark being 0.1 ~ 30 volume %.
10. adhesive for circuit member connection as claimed in claim 1 or 2, wherein, the addition of (e) electroconductive particle with caking agent cumulative volume for during benchmark being 0.1 ~ 10 volume %.
The connection structural bodies of 11. 1 kinds of circuit blocks, its be, first circuit block with the first splicing ear is configured to make described first splicing ear relative with described second splicing ear with the second circuit parts with the second splicing ear, between described first splicing ear making the adhesive for circuit member connection described in any one of claim 1 ~ 10 be present in subtend configuration and described second splicing ear, carry out heating and pressurizing, described first splicing ear and described second splicing ear electrical connection are formed.
CN201210425130.0A 2007-09-05 2008-08-29 Adhesive and connecting structure using the same Expired - Fee Related CN102977798B (en)

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225312A (en) * 2009-03-19 2010-10-07 Hitachi Chem Co Ltd Resin paste composition and semiconductor device
JP5418399B2 (en) * 2009-07-17 2014-02-19 日立化成株式会社 Adhesive composition and circuit member connection structure using the adhesive composition
KR101763458B1 (en) * 2010-03-12 2017-07-31 히타치가세이가부시끼가이샤 Adhesive reel
CN103717698B (en) * 2011-07-29 2018-05-18 日立化成株式会社 The connection structure and its manufacturing method of adhesive composite, the film-like adhesive for having used it and circuit connection material, circuit member
KR20130139134A (en) 2012-06-12 2013-12-20 제일모직주식회사 Adhesive composition, polarizing plate using the same, method for preparing the same and optical member comprising the same
JP6051662B2 (en) * 2012-08-03 2016-12-27 日立化成株式会社 Adhesive composition for circuit connection, adhesive sheet, adhesive reel and circuit member connection structure
JP6135243B2 (en) * 2013-03-29 2017-05-31 東洋インキＳｃホールディングス株式会社 Adhesive and adhesive sheet using the same
CN104293247B (en) * 2014-10-16 2016-06-08 安徽省阜阳沪千人造板制造有限公司 A kind of water-proof sheet material gluing agent containing bamboo fibre
EP3360939B1 (en) * 2015-10-09 2023-03-22 Daicel Corporation Adhesive
GB2543756B (en) * 2015-10-22 2017-10-18 Henkel IP & Holding GmbH Anaerobically curable compositions
DE102016224169A1 (en) * 2016-12-05 2018-06-07 Tesa Se Reactive 2-component adhesive system in film form with improved moist heat resistance
US11773303B2 (en) * 2017-05-31 2023-10-03 Dow Global Technologies Llc Solvent-based adhesive compositions
KR102568476B1 (en) * 2018-10-31 2023-08-18 데쿠세리아루즈 가부시키가이샤 Manufacturing method of connected body, anisotropic bonding film, connected body
JP6946395B2 (en) * 2019-10-25 2021-10-06 日本化学工業株式会社 Conductive adhesives, adhesive structures and electronic components using them
KR20230051202A (en) * 2020-08-14 2023-04-17 브레우어 사이언스, 인코포레이션 Permanent bonding and patterning materials

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1076082A1 (en) * 1999-08-12 2001-02-14 Sony Chemicals Corporation Low-temperature setting adhesive and anisotropically electroconductive adhesive film using the same
CN1425192A (en) * 2000-04-25 2003-06-18 日立化成工业株式会社 Adhesive for circuit connection, circuit connection method using the same, and circuit connection structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3363331B2 (en) * 1996-11-14 2003-01-08 住友ベークライト株式会社 Anisotropic conductive adhesive
WO1998044067A1 (en) * 1997-03-31 1998-10-08 Hitachi Chemical Company, Ltd. Circuit connecting material, and structure and method of connecting circuit terminal
JP2000008021A (en) * 1998-06-18 2000-01-11 Nichiban Co Ltd Thermosetting adhesive composition and sheet made of the same
JP3503740B2 (en) * 1999-03-04 2004-03-08 住友ベークライト株式会社 Anisotropic conductive adhesive and electronic device using the same
JP3660858B2 (en) * 2000-06-01 2005-06-15 ニチバン株式会社 Oil surface adhesive thermosetting composition
JP4363844B2 (en) * 2002-12-26 2009-11-11 ソニーケミカル＆インフォメーションデバイス株式会社 Low temperature curable adhesive and anisotropic conductive adhesive film using the same
CN100368476C (en) * 2004-09-21 2008-02-13 广州宏昌胶粘带厂 Preparation of wide temperature range polyacry late/polyurethane/polysiloxane damping latex
KR101140095B1 (en) * 2005-03-16 2012-04-30 히다치 가세고교 가부시끼가이샤 Connection Structure of Circuit Member and Circuit Connection Member
JP4760070B2 (en) * 2005-03-16 2011-08-31 日立化成工業株式会社 Adhesive, adhesive for circuit connection, connector and semiconductor device
JP4760069B2 (en) * 2005-03-16 2011-08-31 日立化成工業株式会社 Adhesive composition, adhesive composition for circuit connection, circuit connection structure using the same, and semiconductor device
WO2008065997A1 (en) * 2006-12-01 2008-06-05 Hitachi Chemical Company, Ltd. Adhesive and connection structure using the same
JP2008195852A (en) * 2007-02-14 2008-08-28 Hitachi Chem Co Ltd Film adhesive composition and joined structure in circuit terminal using the same composition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1076082A1 (en) * 1999-08-12 2001-02-14 Sony Chemicals Corporation Low-temperature setting adhesive and anisotropically electroconductive adhesive film using the same
CN1425192A (en) * 2000-04-25 2003-06-18 日立化成工业株式会社 Adhesive for circuit connection, circuit connection method using the same, and circuit connection structure

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TWI408198B (en) 2013-09-11
CN102977798A (en) 2013-03-20
CN101821352A (en) 2010-09-01
KR20110082092A (en) 2011-07-15
WO2009031472A1 (en) 2009-03-12
KR20090128383A (en) 2009-12-15
JP5456475B2 (en) 2014-03-26
JP2013007040A (en) 2013-01-10
JP2011231334A (en) 2011-11-17
JPWO2009031472A1 (en) 2010-12-16
TW201435029A (en) 2014-09-16
TW200930781A (en) 2009-07-16
TW201141978A (en) 2011-12-01
KR101187092B1 (en) 2012-09-28
TWI441888B (en) 2014-06-21
CN103351829A (en) 2013-10-16
TWI509044B (en) 2015-11-21

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