CN102977798A - Adhesive and connecting structure using the same - Google Patents

Adhesive and connecting structure using the same Download PDF

Info

Publication number
CN102977798A
CN102977798A CN2012104251300A CN201210425130A CN102977798A CN 102977798 A CN102977798 A CN 102977798A CN 2012104251300 A CN2012104251300 A CN 2012104251300A CN 201210425130 A CN201210425130 A CN 201210425130A CN 102977798 A CN102977798 A CN 102977798A
Authority
CN
China
Prior art keywords
methyl
splicing ear
circuit
adhesive
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2012104251300A
Other languages
Chinese (zh)
Other versions
CN102977798B (en
Inventor
宫泽笑
加藤木茂树
伊泽弘行
白坂敏明
富泽惠子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN102977798A publication Critical patent/CN102977798A/en
Application granted granted Critical
Publication of CN102977798B publication Critical patent/CN102977798B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/24Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29386Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29387Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29386Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29388Glasses, e.g. amorphous oxides, nitrides or fluorides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/2939Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29439Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29444Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29447Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29455Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/2949Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0104Properties and characteristics in general
    • H05K2201/0129Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer

Abstract

The invention provides an adhesive and a connecting structure using the same. The adhesive used for connecting circuit blocks contains (a) a thermoplastic resin, (b) a radical polymerizable compound, (c) a radical polymerization initiator, (d) a vinyl compound containing at least more than one phosphate and a urethane (methyl) acrylate oligomer. The radical polymerizable compound is in a solid-state at a temperature of 30 DEG C or below and comprises an epoxy acrylate, and the content of the radical polymerizable compound is 5-100 parts by mass relatively to 100 parts by mass of (a) the thermoplastic resin.

Description

Caking agent and the syndeton body that uses this caking agent
The present invention is that application number is that the 200880105355X(international application no is PCT/JP2008/065570), the applying date the dividing an application for the patent application of " caking agent and the syndeton body that uses this caking agent " that be on August 29th, 2008, denomination of invention.
Technical field
The present invention relates to a kind of caking agent, and the syndeton body that uses the circuit block of this caking agent.
Background technology
In semiconductor element and liquid crystal display device, in order to make the various parts bondings in the element, use various caking agents all the time.For caking agent used in this purposes, at first require bonding strength, and require under thermotolerance, the hot and humid environment (for example, 85 ℃/85%RH) many-sided characteristics such as connection reliability.In addition, used by sticky object when bonding, be mainly the organic substrates such as printed-wiring board (PWB) and polyimide, and can use metal and ITO, the Si such as copper, aluminium 3N 4, SiO 2Deng the base material with kinds of surface state.Therefore, it is necessary being fit to various molecular designing by the caking agent of sticky object.
All the time, as the caking agent of above-mentioned semiconductor element and used for liquid crystal display element, used the thermosetting resin that contains the Resins, epoxy that demonstrates high-adhesive-strength and high connecting reliability to be used (for example, referring to patent documentation 1).As thermosetting resin, usually use contain Resins, epoxy, have with the solidifying agent such as reactive resol of Resins, epoxy and promote Resins, epoxy and the hot potentiality catalyzer of solidifying agent reaction as the material of constituent.
Hot potentiality catalyzer is the important factor that determines solidification value and curing speed, and the viewpoint of the curing speed the when package stability under the room temperature and heating considers that it can use various compounds.In the operation of reality, by at 170~250 ℃, be cured under 1~3 hour the condition of cure, and the bonding strength that acquisition is wished.
Yet along with the high-precision refinement of highly integrated, the liquid crystal cell of recent semiconductor element, the spacing between the element and between the circuit constantly narrows down, and the heating when therefore solidifying causes circumferential component has been produced disadvantageous effect.In addition, for cost degradation, and need to improve turnout, and require to solidify under lower temperature and at short notice, that is to say, require low temperature quick-setting bonding.In order to realize this low temperature fast setting, must use the low hot potentiality catalyzer of activation evergy, yet be known that to be difficult to have concurrently activation evergy low and in these two kinds of performances of package stability of near room temperature.
To this, recently, just receive publicity with the free-radical polymerised compound such as acrylate derivative or methacrylate derivative with as the radical-curable caking agent that the superoxide of radical polymerization initiator is combined with.The radical-curable caking agent is because therefore reactive strong as the free radical of reactive behavior seed wherein can solidify (for example, referring to patent documentation 2) at short notice.In addition, also proposed to use ammonia ester acrylic compound as the radical-curable caking agent of free-radical polymerised compound, wherein said ammonia ester acrylic compound has been endowed flexibility and flexible (referring to patent documentation 3,4) by ester bond.
Patent documentation 1: Japanese kokai publication hei 1-113480 communique
Patent documentation 2: TOHKEMY 2002-203427 communique
Patent documentation 3: TOHKEMY 2001-262079 communique
Patent documentation 4: TOHKEMY 2002-285128 communique
Summary of the invention
The problem that invention will solve
Yet, the radical-curable caking agent in the past of putting down in writing in patent documentation 2 grades, the cure shrinkage during owing to curing is large, compares during therefore with use Resins, epoxy, has the poor problem of bonding strength.
In addition, the radical-curable caking agent of the use ammonia ester acrylate of putting down in writing in the patent documentation 3,4 etc. owing to have ester bond in molecule, therefore has the caking agent physical property such as spring rate after the curing and second-order transition temperature and descends, and water-intake rate rises the problem that hydrolytic resistance descends.Therefore, when it is used for the caking agent of semiconductor element and liquid crystal display device, have under hot and humid environment (for example, 85 ℃/85%RH) can't obtain the problem of enough connection reliability.
Further, above-mentioned ammonia ester acrylate at room temperature is low viscous aqueous, and therefore when it was used as the gradation composition of film-like adhesive, the surface glue viscous force of the gluing degree of presentation surface increased as can be known, and has problem aspect operability.
The present invention carries out in view of the existing problem of above-mentioned conventional art, its objective is (for example provides in a kind of at low temperatures short period of time, 160 ℃ of lower 10 seconds kinds) syndeton body and the connection reliability of syndeton body under hot and humid environment that can fully suppress gained that solidifies, can obtain to have the circuit block of excellent bonding strength when the junction circuit parts reduce, in addition also excellent caking agent of operability, and the syndeton body that uses the circuit block of this caking agent.
In addition, in this specification sheets, so-called " can fully suppress the connection reliability of syndeton body under hot and humid environment reduces ", even refer under hot and humid environment through in the long situation, also can fully suppress the reduction of the bonding strength between circuit block, and the rising of the contact resistance between relative splicing ear.
The method of dealing with problems
To achieve these goals, the invention provides a kind of caking agent, it contains (a) thermoplastic resin, (b) free-radical polymerised compound, and (c) radical polymerization initiator, and wherein (b) free-radical polymerised compound is being solid below 30 ℃.
According to caking agent of the present invention, can solidify at low temperature and in the short period of time, when having connected circuit block, can obtain to have the syndeton body of the circuit block of excellent bonding strength, and the connection reliability of syndeton body under hot and humid environment that can fully suppress gained reduces, and operability is also excellent in addition.Although it is not yet clear and definite to use caking agent of the present invention can obtain the reason of these effects, but can think, (b) free-radical polymerised compound exists with solid under service temperature (for example, below 30 ℃), is one of reason thereby relatively reduced aqueous composition.
Caking agent of the present invention preferably further contains (d) has at least more than one phosphate in molecule vinyl compound.Thus, under the condition of cure of low temperature and short period of time, can obtain more excellent bonding strength.
(a) thermoplastic resin preferably contains at least a resin that is selected from phenoxy resin, vibrin, urethane resin, polyester urethane resin, butyral resin, acrylic resin, polyimide resin.Thus, can be suppressed at more fully under the hot and humid environment reduction of the bonding strength after long-time.
Caking agent of the present invention preferably further contains (e) electroconductive particle.Thereby, owing to can give electroconductibility or anisotropic conductive to caking agent, therefore can be according to suitable caking agents that uses such as the connection purposes each other of the circuit block with splicing ear.In addition, can fully reduce by the contact resistance between the splicing ear of above-mentioned caking agent electrical connection.
In addition, the invention provides a kind of syndeton body of circuit block, it is, first circuit block that will have the first splicing ear becomes to make described the first splicing ear relative with described the second splicing ear with the second circuit component configuration with second splicing ear, the caking agent of the invention described above is present between described first splicing ear and described the second splicing ear of subtend configuration, carry out heating and pressurizing, described the first splicing ear and described the second splicing ear are electrically connected form.
Therefore this syndeton body can fully improve the bonding strength of circuit block, and can fully suppress the reduction of the connection reliability under the hot and humid environment owing to use the caking agent of the invention described above.
The invention effect
According to the present invention, syndeton body and the connection reliability of syndeton body under hot and humid environment that can fully suppress gained that can provide a kind of and solidify at low temperature and in the short period of time, can obtain during at the junction circuit parts to have the circuit block of excellent bonding strength reduce, in addition also excellent caking agent of operability, and the syndeton body that uses the circuit block of this caking agent.
The simple declaration of accompanying drawing
The summary sectional view of a kind of embodiment of the syndeton body of [Fig. 1] expression circuit block of the present invention.
Nomenclature
7 ... electroconductive particle, 10 ... electric circuit connection member, 11 ... resin, 20,30 ... circuit block, 21,31 ... circuit substrate, 22,32 ... circuit electrode.
Embodiment
Below, be elaborated for preferred implementation of the present invention.In addition, in this manual, " fusing point " refers to the exothermal peak temperature by the differential scanning calorimetric measurement curve of differential scanning calorimetric measurement gained.In addition, above-mentioned differential scanning calorimetric measurement, (Perkinelmer Inc. makes for example can to use differential scanning calorimeter, Pyris DSC7), flow with 10mL/min passes into air, and after 25 ℃ of maintenances, carries out being warming up to 10 ℃/min under 120 ℃ the condition.
(a) thermoplastic resin as used among the present invention is not particularly limited, and can use well known materials.As this polymkeric substance, can use polyimide, polymeric amide, phenoxy resin class, poly-(methyl) esters of acrylic acid, polyimide, polyurethanes, polyester, PAUR class, polyvinyl butyral class, vinyl-vinyl acetate copolymer etc.These polymkeric substance can use separately as required, or use mixing more than 2 kinds.Further, can contain siloxane bond or fluoro substituents in these polymkeric substance.These polymkeric substance so long as the resin that mixes is fully compatible each other, or produces the state that microphase-separated forms muddiness, just can use well.The molecular weight of above-mentioned polymkeric substance is larger, the easier film-forming properties that obtains then, and the melt viscosity that the flowability as caking agent is exerted an influence can be set as relative broad range.Molecular weight is not particularly limited, but weight-average molecular weight is preferably 5,000~500,000 usually, and more preferably 10,000~100,000.When this value less than 5,000 o'clock, film-forming properties has the tendency of variation, and surpasses at 500,000 o'clock when it, and the consistency of other composition has the tendency of variation.
As (b) free-radical polymerised compound used among the present invention; can be have in styrene derivatives, maleimide derivatives or the molecule an above acryl or methacryloyl (after; be called (methyl) acryl) compound; and so long as be the material of solid below 30 ℃; just be not particularly limited, can use well known materials.
Herein, " being solid below 30 ℃ ", refer to above-claimed cpd when leaving standstill separately below 30 ℃, be shown as wax-like, wax-like, lenticular, glassy, powdery etc. and do not have mobile solid state, or above-claimed cpd carried out above-mentioned differential scanning calorimetric measurement, its fusing point is above 30 ℃.
Object lesson as (b) free-radical polymerised compound, can enumerate N, N '-methylene diacrylamine, two acetone acrylic acid amides, N hydroxymethyl acrylamide, N-phenyl methyl acrylamide, 2-acrylamide-2-methyl propane sulfonic acid, three (2-acryloxy ethyl) isocyanuric acid ester, N-phenylmaleimide, N-o-tolyl maleimide, tolyl maleimide between N-, N-p-methylphenyl maleimide, the N-(o-methoxyphenyl) maleimide, the N-(m-methoxyphenyl) maleimide, the N-(p-methoxyphenyl) maleimide, N-methyl maleimide, NEM, N-octyl group maleimide, 4,4 '-ditan dimaleimide, the metaphenylene dimaleimide, 3,3 '-dimethyl-5,5 '-diethyl-4,4 '-ditan dimaleimide, the 4-methyl isophthalic acid, 3-phenylene dimaleimide, N-methacryloxy maleimide, N-acryloxy maleimide, 1,6-dimaleimide-(2,2,4-trimethylammonium) hexane, N-methacryloxy succsinic acid imide, N-acryloxy succsinic acid imide, 2-naphthyl methyl acrylate, 2-naphthyl acrylate, tetramethylol methane tetraacrylate, divinyl ethylidene urea, divinyl propylidene urea, caprolactam, vinylcarbazole, the polystyrene-based β-dimethyl-aminoethylmethacrylate of 2-, N-phenyl-N '-(3-methacryloxy-2-hydroxypropyl)-P-pHENYLENE dI AMINE, N-phenyl-N '-(3-acryloxy-2-hydroxypropyl)-P-pHENYLENE dI AMINE, two (4-ethenylphenyl) sulfone, 2-tert.-butoxy-6-vinyl naphthalene, the tetramethyl piperidine methacrylic ester, the tetramethyl piperidine acrylate, pentamethyl-piperidine methyl acrylate, pentamethyl-piperidines acrylate, the octadecyl acrylate, N tert butyl acrylamide, diacetone acrylamide, N-methylol acrylic acid amides, the represented compound of following general formula (A)~(J).In these compounds, consider preferably have the compound of (methyl) acryl from the viewpoint of rapidly-curable, consider from the viewpoint of curability at low temperatures and operability that preferred fusing point is 50~100 ℃ compound.These compounds can use separately as required, or mix and use.
[changing 1]
Figure BDA00002331275800061
(herein, l represents 1~10 integer.)
[changing 2]
Figure BDA00002331275800062
[changing 3]
Figure BDA00002331275800063
(herein, R1 represents hydrogen or methyl, and R2 represents hydrogen or methyl, and m represents 15~30 integer.)
[changing 4]
Figure BDA00002331275800064
(herein, R3 represents hydrogen or methyl, and R4 represents hydrogen or methyl, and n represents 15~30 integer.)
[changing 5]
Figure BDA00002331275800065
(herein, R5 represents hydrogen or methyl.)
[changing 6]
Figure BDA00002331275800071
(herein, R6 represents hydrogen or methyl, and o represents 1~10 integer.)
[changing 7]
Figure BDA00002331275800072
(herein, R7 represents the organic group shown in hydrogen or the following general formula (a) and (b), and p represents 1~10 integer.)
[changing 8]
[changing 9]
Figure BDA00002331275800074
[changing 10]
Figure BDA00002331275800075
(herein, R8 represents the organic group shown in hydrogen or following general formula (c), (d), and q represents 1~10 integer.)
[changing 11]
Figure BDA00002331275800076
[changing 12]
Figure BDA00002331275800081
[changing 13]
Figure BDA00002331275800082
(herein, R9 represents hydrogen or methyl.)
[changing 14]
Figure BDA00002331275800083
(herein, R10 represents hydrogen or methyl.)
(b) addition of free-radical polymerised compound with respect to 100 mass parts (a) thermoplastic resin, is preferably 1~200 mass parts, more preferably 5~100 mass parts.When addition during less than 1 mass parts, the thermotolerance after the curing descends, and the tackiness along with the film surface increases simultaneously, and operability descends.In addition, when it surpassed 200 mass parts, as film the time, film-forming properties descended, membranous the becoming fragile after solidifying simultaneously, and bonding force reduces.Among the present invention, as the index of operability, can use the surface glue viscous force in the time of 25~30 ℃, and, consider from the operability of caking agent with by the temporary fixed property viewpoint of sticky object, wish that the surface glue viscous force is below the 50gf.
As (c) radical polymerization initiator used among the present invention, can use the in the past known compound such as known superoxide or azo-compound, consider from stability, viewpoint reactive, consistency, half life temperature was 90~175 ℃ in preferred 1 minute, and molecular weight is 180~1,000 superoxide.Object lesson as this (c) radical polymerization initiator; can enumerate 1; 1; 3; 3-tetramethyl butyl new decanoate ester peroxide; two (4-tert-butylcyclohexyl) peroxy dicarbonate; two (2-ethylhexyl) peroxy dicarbonate; the cumyl new decanoate ester peroxide; 1; 1; 3; 3-tetramethyl butyl new decanoate ester peroxide; two bay acyl peroxides; 1-cyclohexyl-1-methylethyl new decanoate ester peroxide; uncle's hexyl new decanoate ester peroxide; tert-butyl hydroperoxide neodecanoic acid ester; the tert-butyl hydroperoxide valerate; 1; 1; 3; 3-tetramethyl butyl peroxidation-2-ethylhexanoate; 2; 5-dimethyl-2; 5-two (peroxidation of 2-ethyl hexyl acyl group) hexane; uncle's hexyl peroxidation-2-ethylhexanoate; tert-butyl hydroperoxide-2-ethylhexanoate; the new heptanoate of tert-butyl hydroperoxide; t-amyl peroxy-2-ethylhexanoate; di-tert-butyl peroxide six hydrogen terephthalate; t-amyl peroxy-3; 5; 5-tri-methyl hexanoic acid ester; 3-hydroxyl-1; 1-dimethylbutyl new decanoate ester peroxide; 1; 1; 3; 3-tetramethyl butyl peroxidation-2-ethylhexanoate; t-amyl peroxy neodecanoic acid ester; t-amyl peroxy-2-ethylhexanoate; two (3-methyl benzoyl) superoxide; the dibenzoyl superoxide; two (4-methyl benzoyl) superoxide; 2; 2 '-azo two-2; the 4-methyl pentane nitrile; 1; 1 '-azo two (1-acetoxyl group-1-diphenylphosphino ethane); 2; 2 '-Diisopropyl azodicarboxylate; 2; 2 '-azo two (2-methylbutyronitrile); dimethyl-2; 2 '-Diisopropyl azodicarboxylate; 4; 4 '-azo two (4-cyanopentanoic acid); 1; 1 '-azo two (1-cyclohexane nitrile); uncle's hexyl peroxidation sec.-propyl monocarbonate; the tert-butyl hydroperoxide toxilic acid; tert-butyl hydroperoxide-3; 5; 5-tri-methyl hexanoic acid ester; the tert-butyl hydroperoxide laurate; 2; 5-dimethyl-2; 5-two (peroxidation of 3-methyl benzoyl) hexane; tert-butyl hydroperoxide-2-ethylhexyl monocarbonate; uncle's hexyl peroxide benzoate; 2; 5-dimethyl-2,5-two (benzoyl peroxidation) hexane; tert butyl peroxy benzoate; dibutyl peroxidation trimethyladipic acid ester; t-amyl peroxy n-caprylic acid ester; the different pelargonate of t-amyl peroxy; t-amyl peroxy benzoic ether etc.These compounds can use separately, perhaps the compound more than 2 kinds are used.
In addition, as (c) radical polymerization initiator used among the present invention, can also use the compound that under the rayed of 150~750nm, produces free radical.As this compound, be not particularly limited, can use known compound, for example, Photoinitiation, Photopolymerization, and Photocuring, J.-P.Fouassier, Hanser Publishers(1995), the alpha-acetamido-amphyl of putting down in writing among p17~p35 and phosphinoxide are high for light-struck sensitivity, therefore more preferably.These compounds can use separately, perhaps mix use with above-mentioned superoxide or azo-compound.
The addition of (c) of the present invention radical polymerization initiator with respect to 100 mass parts (a) thermoplastic resin, is preferably 0.1~30 mass parts, and 2~20 mass parts more preferably.When radical polymerization initiator during less than 0.1 mass parts, solidify not enough, and when it surpasses 30 mass parts, shelf-stability decline.
The vinyl compound that in molecule, has at least more than one phosphate as (d) used among the present invention; be not particularly limited; can use known material, more preferably in molecule, have at least more than one (methyl) acryl of free-radical polymerised excellence as phosphoric acid (methyl) acrylic compound of vinyl.As this compound, can enumerate the compound shown in the following general formula (K)~(M).
[changing 15]
(herein, R11 represents acryloxy or methacryloxy, and R12 represents hydrogen or methyl, and r, s represent 1~8 integer independently.)
[changing 16]
Figure BDA00002331275800102
(herein, R13 represents acryloxy or methacryloxy, and t, u, v represent 1~8 integer independently.)
[changing 17]
Figure BDA00002331275800103
(herein, R14 represents acryloxy or methacryloxy, and R15 represents hydrogen or methyl, and w, x represent 1~8 integer independently.)
The object lesson that in molecule, has the vinyl compound of at least more than one phosphate as (d), can enumerate acid phosphorus acyloxy ethyl-methyl acrylate, acid phosphorus acyloxy ethyl propylene acid esters, acid phosphorus acyloxy propyl methyl acid esters, acid phosphorus acyloxy polyoxyethylene glycol monomethacrylates, acid phosphorus acyloxy polyoxy propylene glycol monomethyl acrylate, the 2-(methyl) acryloxy ethyl phosphonic acid ester, 2,2 '-two (methyl) acryloxy diethyl phosphoric acid ester, EO modified phosphate dimethacrylate, the phosphoric acid modification epoxy acrylate, phosphoric acid ethene alcohol ester etc.
When interpolation (d) had the vinyl compound of at least more than one phosphate in molecule, its addition was preferably 0.05~30 mass parts, more preferably 0.1~20 mass parts with respect to 100 mass parts (a) thermoplastic resin.When addition during less than 0.05 mass parts, be difficult to obtain high-adhesive-strength, and when it surpassed 30 mass parts, the caking agent physical property after the curing reduced significantly, reliability may descend.
As (e) electroconductive particle used among the present invention, can enumerate the metallicss such as Au, Ag, Ni, Cu, scolding tin or carbon etc.In addition, can also be take dielectric glass, pottery, plastics etc. as nuclear, and be coated with the material that above-mentioned metal, metallics or carbon form at this nuclear.When electroconductive particle is as nuclear take plastics, and when this nuclear is coated with material that above-mentioned metal, metallics or carbon forms or hot molten metal particle owing under heating and pressurizing, have deformability, when therefore connecting and the contact area of electrode increase, Reliability Enhancement, therefore preferred.In addition, further with the particulate of the surperficial gained of these electroconductive particles of coating such as macromolecule resin, when increasing the electroconductive particle use level, can suppress the short circuit that produces because of particle contact each other, improve the insulativity between telegraph circuit, therefore can suitably use separately, or mix use with electroconductive particle.
Be somebody's turn to do the median size of (e) electroconductive particle, consider from viewpoint dispersed, electroconductibility, be preferably 1~18 μ m.
(e) addition of electroconductive particle is not particularly limited, and take the cumulative volume of adhesive composite as benchmark, is preferably 0.1~30 volume %, more preferably 0.1~10 volume %.When this is worth less than 0.1 volume %, have the tendency of electroconductibility variation, when it surpasses 30 volume %, have the tendency that produces short circuit.In addition, the volume of each composition before the curing when volume % is based on 23 ℃ determines that the volume of each composition can utilize proportion to be scaled volume by weight.In addition, can also will not dissolve or this composition of swelling, but the appropriate solvent of wetting this composition (water, alcohol etc.) is put into graduated cylinder well, adds this composition again, obtains the volume of increase, and with it as described volume.
In order to improve crosslinking rate and the toughness of guaranteeing cured article, caking agent of the present invention in the above-mentioned free-radical polymerised compound that below 30 ℃ is solid, can also suitably add multifunctional (methyl) acrylic compound.
As the object lesson of multifunctional (methyl) acrylic compound, can enumerate epoxy group(ing) (methyl) origoester acrylate, urethane (methyl) origoester acrylate, polyethers (methyl) origoester acrylate, the oligopolymer such as polyester (methyl) origoester acrylate, trimethylolpropane tris (methyl) acrylate, polyoxyethylene glycol two (methyl) acrylate, polyalkylene glycol two (methyl) acrylate, dicyclopentenyl (methyl) acrylate, two cyclopentenes oxygen base ethyl (methyl) acrylate, neopentyl glycol two (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, isocyanuric acid modification 2 officials energy (methyl) acrylate, isocyanuric acid modification 3 officials energy (methyl) acrylate, two phenoxyethyl alcohol fluorenes acrylate, on the glycidyl of bisphenol fluorene diglycidylether addition (methyl) acrylic acid epoxy group(ing) (methyl) acrylate, on the glycidyl of bisphenol fluorene diglycidylether addition ethylene glycol or propylene glycol and import the compound that (methyl) acryloxy forms in the compound that obtains, following general formula (N), (O) compound shown in etc. multifunctional (methyl) acrylic compound.These compounds can use separately as required, perhaps mix and use.
[changing 18]
Figure BDA00002331275800121
(herein, R16 represents hydrogen or methyl, and R17 represents hydrogen or methyl, and y represents 1~8 integer, and z represents 1~8 integer.)
[changing 19]
Figure BDA00002331275800122
(herein, R18 represents hydrogen or methyl, and R19 represents hydrogen or methyl, and a represents 1~8 integer, and b represents 0~8 integer.)
In order further to control curing speed and to improve package stability, in caking agent of the present invention, can suitably add stablizer.As this stablizer, be not particularly limited, can use known compound, the phenol derivativess, 2,2 such as quinone derivative, 4-methoxyphenol, 4-tert-butyl catechol such as preferred benzoquinones, quinhydrones, 6,6-tetramethyl piperidine-1-oxygen base, 4-hydroxyl-2, the steric hindrance sulfonamide derivativess such as aminooxy (aminoxyl) derivative, tetramethyl-piperidyl methacrylic ester such as 2,6,6-tetramethyl piperidine-1-oxygen base.
When adding stablizer, its addition is preferably 0.01~30 mass parts, more preferably 0.05~10 mass parts with respect to 100 mass parts (a) thermoplastic resin.When addition during less than 0.01 mass parts, additive effect may significantly descend, and when it surpasses 30 mass parts, and the consistency of other composition may descend.
In caking agent of the present invention, can also suitably add the bonding auxiliary agents such as coupling agent take alkoxyl silicone alkane derivatives or silazane derivative as representative and adhesion promoters, flow agent, urea resin, melamine resin.As bonding auxiliary agent, be preferably the compound shown in the following general formula (P), and they can use separately, or the compound more than 2 kinds is used.
[changing 20]
Figure BDA00002331275800131
(herein, R20, R21, R22 represent that independently hydrogen, carbon number are that 1~5 alkyl, carbon number are that 1~5 alkoxyl group, carbon number are 1~5 alkoxy carbonyl, aryl, R23 represents (methyl) acryloxy, vinyl, isocyanate group, imidazolyl, sulfydryl, amino, methylamino, dimethylamino, benzylamino, phenyl amino, cyclohexyl amino, morpholinyl, piperazinyl, uride base, glycidyl, and c represents 1~10 integer.)
In order to relax stress and to improve cementability, in caking agent of the present invention, can add rubber constituent.Object lesson as rubber constituent; can enumerate polyisoprene; polyhutadiene; the C-terminal polyhutadiene; the C-terminal polyhutadiene; 1; the 2-polyhutadiene; C-terminal 1; the 2-polyhutadiene; C-terminal 1, the 2-polyhutadiene; acrylic rubber; styrene butadiene rubbers; the C-terminal styrene butadiene rubbers; acrylonitrile-butadiene rubber; contain carboxyl in polymer ends; hydroxyl; the acrylonitrile-butadiene rubber of (methyl) acryl or morpholinyl; carboxylated nitrile rubber; C-terminal gathers (oxypropylene); alkoxysilyl terminal poly-(oxypropylene); poly-(oxygen tetramethylene) glycol; polyolefin diols; poly-epsilon-caprolactone; acrylic rubber.
As above-mentioned rubber constituent, consider from the viewpoint that cementability improves, be preferably at side chain or end and contain the cyano group as high polar group, the rubber constituent of carboxyl, further, consider from the viewpoint that flowability improves, more preferably aqueous rubber.
Object lesson as aqueous rubber; can enumerate aqueous acrylonitrile-butadiene rubber; the aqueous acrylonitrile-butadiene rubber that contains carboxyl, hydroxyl, (methyl) acryl or morpholinyl in polymer ends; aqueous carboxylated nitrile rubber preferably is 10~60% rubber as the acrylonitrile content of polar group.These compounds can use separately, or the compound more than 2 kinds is used.
Caking agent of the present invention when at room temperature being aqueous, can use with pasty state.When at room temperature being solid, except heating is used, use after can also using solvent with its gelatinization.As available solvent, so long as do not have reactivity with adhesive composite and additive, and demonstrate sufficient deliquescent material, just be not particularly limited, preferably the boiling point under normal pressure is 50~150 ℃ solvent.When boiling point during less than 50 ℃, may volatilize when at room temperature placing, thereby in open system, use and be restricted.In addition, when boiling point surpassed 150 ℃, solvent was difficult to volatilization, may produce detrimentally affect to the reliability after bonding.
Caking agent of the present invention can also form membranaceous the use.Adhesive composite, solution coat that can be by will having added as required solvent etc. is on the separability base materials such as fluororesin film, polyethylene terephthalate film, release paper, perhaps make the base materials such as mentioned solution immersion non-woven fabrics, and be placed on the separability base material, desolventizings etc. are used thereby form film.When using with the shape of film, consider from viewpoints such as operability, more convenient.
Above-mentioned caking agent by with heating and pressurization and usefulness, can make by sticky object bonding.Heating temperature is not particularly limited, and for example, can be 100~250 ℃, in order fully to suppress when solidifying heating to the detrimentally affect that parts on every side produce, is preferably 100~180 ℃.Pressure so long as can just not be not particularly limited being produced the scope of damage by sticky object, is preferably 0.1~10MPa usually.The time of these heating and pressurization can be for 0.5 second~120 second, considered from the viewpoint of cost degradation, was preferably for 0.5 second~10 second.For example, can be undertaken bonding by 140~200 ℃, 3MPa, the heating in 10 seconds.
Caking agent of the present invention can be as different not of the same race by the caking agent of sticky object of thermal expansivity.Specifically, can be used as anisotropically conducting adhesive, circuit connection material take silver paste, silverskin etc. as representative, CSP is the semiconductor element adhesives of representative with elastomerics, CSP with end underfill material, chips welding (die bonding) film, chips welding paste etc.
The syndeton body of circuit block of the present invention, be first circuit block that will have the first splicing ear and the second circuit component configuration with second splicing ear become to make the first splicing ear relative with the second splicing ear to, above-mentioned caking agent is present between first splicing ear and the second splicing ear of subtend configuration, carry out heating and pressurizing, the syndeton body that the first splicing ear and the second splicing ear are electrically connected.
Fig. 1 is the summary sectional view of an embodiment of the syndeton body of expression circuit block of the present invention.As shown in Figure 1, the syndeton body of present embodiment, have toward each other to the first circuit block 20 and second circuit parts 30, and between the first circuit block 20 and second circuit parts 30, be provided with the electric circuit connection member 10 that they are connected.
The first circuit block 20 has circuit substrate (the first circuit substrate) 21 and formed circuit electrode (the first circuit electrode) 22 on the interarea 21a of circuit substrate 21.In addition, on the interarea 21a of the first circuit substrate 21, can according to circumstances form insulation layer (not shown).
On the other hand, second circuit parts 30 have circuit substrate (second circuit substrate) 31 and formed circuit electrode (second circuit electrode) 32 on the interarea 31a of circuit substrate 31.In addition, on the interarea 31a of circuit substrate 31, also can according to circumstances form insulation layer (not shown).
As the first and second circuit blocks 20,30, as long as be formed with the electrode that needs electrical connection, just be not particularly limited.Specifically, can enumerate and form the glass of electrode or plastic base, printed-wiring board (PWB), ceramic circuit-board, flex circuit application, semiconductor silicon chips etc. for liquid-crystal display by ITO etc.They can be used in combination as required.In the present embodiment, mainly use printed-wiring board (PWB) and by the formed material of the organism such as polyimide, and can use metal or the ITO(indium tinoxide such as copper, aluminium), silicon nitride (SiN x), silicon-dioxide (SiO 2) etc. inorganic etc. have the circuit block of kinds of surface state.
Electric circuit connection member 10 is formed by the cured article of above-mentioned caking agent.This electric circuit connection member 10 contains resin 11 and electroconductive particle 7.Electroconductive particle 7 not only be configured in relatively to circuit electrode 22 and circuit electrode 32 between, but also be configured between interarea 21a, the 31a.In the syndeton of circuit block, circuit electrode 22,32 is electrically connected by electroconductive particle 7.That is, electroconductive particle 7 and circuit electrode 22,32 the two directly contact.
Herein, electroconductive particle 7 is foregoing (e) electroconductive particles, and resin 11 is cured articles of above-mentioned caking agent.
In the syndeton of this circuit block, as mentioned above, relatively to circuit electrode 22 and circuit electrode 32 be electrically connected by electroconductive particle 7.Therefore, the contact resistance between the circuit electrode 22,32 is fully reduced.Thereby the electric current between the circuit electrode 22,32 can smooth and easyly pass through, and can give full play to the function that circuit has.In addition, when electric circuit connection member 10 does not contain electroconductive particle 7, directly contact with circuit electrode 32 by making circuit electrode 22, and be electrically connected.
The manufacture method of the syndeton body of present embodiment, namely circuit block 20,30 method of attachment are for example as described below.At first, above-mentioned caking agent is present between the circuit block 20,30.At this moment, circuit block 20,30 is configured to make circuit electrode 22 relative with 32 to.Then, on one side across circuit block 20,30 caking agent, the stack direction at them pressurizes on one side, implements the solidification treatment of caking agent, forms electric circuit connection member 10.Solidification treatment can carry out under example Heating temperature described above, moulding pressure, and its method can suitably be selected according to caking agent.
Because electric circuit connection member 10 is made of the cured article of above-mentioned caking agent, so electric circuit connection member 10 fully improves with respect to the bonding strength of circuit block 20 or 30, and can fully be suppressed at the reduction of the connection reliability under the hot and humid environment.
In addition, although be described for the situation that contains electroconductive particle in the above-described embodiment, the syndeton body of circuit block of the present invention also can not contain electroconductive particle.When not containing electroconductive particle, by directly being contacted mutually, relative electrode is electrically connected.
Embodiment
Below, specify the present invention based on embodiment, but the present invention is not limited thereto.
[synthesizing of urethane resin]
Be that 2000 polybutylene adipate diol, 450 mass parts molecular-weight average are 2000 polytetramethylene glycol and 100 mass parts 1 with 450 mass parts weight-average molecular weight, the 4-butyleneglycol, be dissolved in the 4000 mass parts methylethylketones, and add 390 mass parts diphenylmethanediisocyanates, make it 70 ℃ of reactions 60 minutes, obtain urethane resin.Measure the weight-average molecular weight of the urethane resin of gained by gel permeation chromatography (GPC), the result is 100,000.
(embodiment 1~9, comparative example 1~3)
As thermoplastic resin, it is the solution of 30 % by weight that above-mentioned urethane resin is dissolved in the solids component that forms in the mixed solvent of methylethylketone and toluene, with the phenoxy resin (ZX-1356-2 that is dissolved in take solids component as 40 % by weight in the methylethylketone, Toto Kasei KK's trade(brand)name processed) or be dissolved in the polyester urethane resin (UR-1350, Toyo Boseki K.K's trade(brand)name processed) in the mixed solvent of methylethylketone and toluene take solids component as 40 % by weight and use.
As free-radical polymerised compound, use separately at 30 ℃ of lower epoxy acrylate (VR-60 and VR-90 as solid, Showa Highpolymer Co., Ltd's trade(brand)name processed), perhaps will be as the isocyanuric acid EO modification triacrylate (M-215 of aqueous free-radical polymerised compound, Toagosei Co., Ltd's trade(brand)name processed) and ammonia ester acrylate (UA6100, Xin Zhong village KCC trade(brand)name processed) and use.
As acidic cpd, use the 2-(methyl) acryloxy ethyl phosphonic acid ester (light ester (ラ イ ト エ ス テ Le) P-2M, Co., Ltd. of common prosperity society trade(brand)name processed).
As radical polymerization initiator, use uncle's hexyl peroxidation-2-ethylhexanoate (PERHEXYL O, NOF Corp's trade(brand)name processed).
In addition, be produced on take polystyrene and on the particle surface of nuclear, be provided with thickness as the nickel dam of 0.2 μ m, and in the arranged outside of this nickel dam thickness to be arranged be the gold layer of 0.02 μ m, and median size is that 4 μ m, proportion are 2.5 electroconductive particle.
Match well to close with the solid weight shown in the following table 1 and state composition, above-mentioned electroconductive particle is cooperated with the amount of 1.5 volume % disperse again.Use apparatus for coating that it is coated on the fluororesin film that thickness is 80 μ m, and 70 ℃ of warm air dryings 10 minutes, the thickness that obtains bond layer was the film-like adhesive of the embodiment 1~9 of 18 μ m, comparative example 1~3.
[table 1]
Figure BDA00002331275800171
Use viscosity test machine (the レ ス カ of Co., Ltd. system, LT25A-500) (basal temperature is 30 ℃), and measure the surface glue viscous force of the film-like adhesive of embodiment 1~9, comparative example 1~3 according to JISZ-0237.
[mensuration of contact resistance, bonding strength]
Film-like adhesive with embodiment 1~9, comparative example 1~3, be arranged on that to have 500 live widths be that 25 μ m, spacing are that 50 μ m, thickness are that (thickness is 1.1mm, and surface resistivity is between 20 Ω/) for the flex circuit application (FPC) of the copper circuit of 12 μ m and the glass that is formed with 0.2 μ m Indium sesquioxide (ITO) thin layer.Using hot-press arrangement (type of heating: permanent pattern of fever, Dongli Engineering Co., Ltd makes), is that 2mm connects with described material at width 10 seconds of heating and pressurizing under 160 ℃, 3MPa, makes linker.
At once and at 85 ℃, the hot and humid middle maintenance of 85%RH after 168 hours (after the test), use the resistance value between the adjacent circuit of this linker of multitester measuring after bonding.Resistance value represents with the mean value of 37 place's resistance between adjacent circuit.
In addition, according to JIS-Z0237, use 90 degree stripping methods to measure the bonding strength of this linker, and estimate.Herein, the determinator of bonding strength uses uncommon grand (テ Application シ ロ Application) the UTM-4(peeling rate 50mm/min in Japan ボ ー Le De ウ ィ Application Co., Ltd. sky processed, 25 ℃).The measurement result of surface glue viscous force, contact resistance and the bonding strength of the film-like adhesive that as above carries out is shown in following table 2.
[table 2]
Figure BDA00002331275800191
Hence one can see that, the adhesive composite of embodiment 1~9 gained, when 160 ℃ of Heating temperatures, at once and after in 85 ℃, the hot and humid groove of 85%RH, keeping 168 hours (after the test), demonstrate the following good contact resistance of about 3 Ω and the above good bonding intensity of 400N/m after bonding.Further, hence one can see that, and the surface glue viscous force of the gluing degree of presentation surface is low, and operability is excellent.
On the contrary as can be known, do not use among the present invention the comparative examples 1 at 30 ℃ of lower free-radical polymerised compounds for solid, its surface glue viscous force height, operability is poor, and in addition, bonding strength is also low.And as can be known, in comparative example 2,3, although demonstrated good contact resistance and bonding strength, the surface glue viscous force is large, and has problem aspect operability.

Claims (4)

1. adhesive for circuit member connection, it contains (a) thermoplastic resin, (b) have at least more than one phosphate in molecule for the free-radical polymerised compound of solid, (c) radical polymerization initiator, (d) below 30 ℃ vinyl compound and urethane (methyl) origoester acrylate
(b) below 30 ℃ for the free-radical polymerised compound of solid comprises epoxy acrylate, be 5 ~ 100 mass parts for the content of the free-radical polymerised compound of solid with respect to (a) thermoplastic resins of 100 mass parts below 30 ℃ (b).
2. adhesive for circuit member connection as claimed in claim 1, wherein, (a) thermoplastic resin contains polyester urethane resin.
3. adhesive for circuit member connection as claimed in claim 1 or 2 wherein, further contains (e) electroconductive particle.
4. the syndeton body of a circuit block, it is, first circuit block that will have the first splicing ear and the second circuit component configuration with second splicing ear become to make described the first splicing ear relative with described the second splicing ear to, each described adhesive for circuit member connection of claim 1~3 is present between described first splicing ear and described the second splicing ear of subtend configuration, carry out heating and pressurizing, described the first splicing ear and described the second splicing ear are electrically connected form.
CN201210425130.0A 2007-09-05 2008-08-29 Adhesive and connecting structure using the same Expired - Fee Related CN102977798B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007230166 2007-09-05
JP2007-230166 2007-09-05

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200880105355XA Division CN101821352B (en) 2007-09-05 2008-08-29 Adhesive and connecting structure using the same

Publications (2)

Publication Number Publication Date
CN102977798A true CN102977798A (en) 2013-03-20
CN102977798B CN102977798B (en) 2015-04-29

Family

ID=40428791

Family Applications (3)

Application Number Title Priority Date Filing Date
CN2013101829578A Pending CN103351829A (en) 2007-09-05 2008-08-29 Adhesive and connecting structure using the same
CN201210425130.0A Expired - Fee Related CN102977798B (en) 2007-09-05 2008-08-29 Adhesive and connecting structure using the same
CN200880105355XA Active CN101821352B (en) 2007-09-05 2008-08-29 Adhesive and connecting structure using the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2013101829578A Pending CN103351829A (en) 2007-09-05 2008-08-29 Adhesive and connecting structure using the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200880105355XA Active CN101821352B (en) 2007-09-05 2008-08-29 Adhesive and connecting structure using the same

Country Status (5)

Country Link
JP (3) JP5456475B2 (en)
KR (2) KR20110082092A (en)
CN (3) CN103351829A (en)
TW (3) TWI509044B (en)
WO (1) WO2009031472A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114585704A (en) * 2019-10-25 2022-06-03 日本化学工业株式会社 Conductive adhesive, adhesive structure using same, and electronic component

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225312A (en) * 2009-03-19 2010-10-07 Hitachi Chem Co Ltd Resin paste composition and semiconductor device
JP5418399B2 (en) * 2009-07-17 2014-02-19 日立化成株式会社 Adhesive composition and circuit member connection structure using the adhesive composition
CN104403589B (en) * 2010-03-12 2017-01-11 日立化成株式会社 Adhesive reel
KR101982885B1 (en) * 2011-07-29 2019-05-27 히타치가세이가부시끼가이샤 Adhesive composition, film-like adhesive and circuit connecting material using same adhesive composition, connection structure for circuit member and manufacturing method for same
KR20130139134A (en) 2012-06-12 2013-12-20 제일모직주식회사 Adhesive composition, polarizing plate using the same, method for preparing the same and optical member comprising the same
JP6051662B2 (en) * 2012-08-03 2016-12-27 日立化成株式会社 Adhesive composition for circuit connection, adhesive sheet, adhesive reel and circuit member connection structure
JP6135243B2 (en) * 2013-03-29 2017-05-31 東洋インキScホールディングス株式会社 Adhesive and adhesive sheet using the same
CN104293247B (en) * 2014-10-16 2016-06-08 安徽省阜阳沪千人造板制造有限公司 A kind of water-proof sheet material gluing agent containing bamboo fibre
CN108137994B (en) * 2015-10-09 2021-08-03 株式会社大赛璐 Adhesive agent
GB2543756B (en) * 2015-10-22 2017-10-18 Henkel IP & Holding GmbH Anaerobically curable compositions
DE102016224169A1 (en) * 2016-12-05 2018-06-07 Tesa Se Reactive 2-component adhesive system in film form with improved moist heat resistance
JP6898413B2 (en) 2018-10-31 2021-07-07 デクセリアルズ株式会社 Manufacturing method of connecting body, anisotropic bonded film, connecting body
TW202219231A (en) * 2020-08-14 2022-05-16 美商布魯爾科技公司 Permanent bonding and patterning material

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000008021A (en) * 1998-06-18 2000-01-11 Nichiban Co Ltd Thermosetting adhesive composition and sheet made of the same
EP1076082A1 (en) * 1999-08-12 2001-02-14 Sony Chemicals Corporation Low-temperature setting adhesive and anisotropically electroconductive adhesive film using the same
CN1425192A (en) * 2000-04-25 2003-06-18 日立化成工业株式会社 Adhesive for circuit connection, circuit connection method using the same, and circuit connection structure
WO2006098352A1 (en) * 2005-03-16 2006-09-21 Hitachi Chemical Company, Ltd. Adhesive composition, circuit connecting material, connection structure of circuit member, and semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3363331B2 (en) * 1996-11-14 2003-01-08 住友ベークライト株式会社 Anisotropic conductive adhesive
EP1890324A3 (en) * 1997-03-31 2008-06-11 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
JP3503740B2 (en) * 1999-03-04 2004-03-08 住友ベークライト株式会社 Anisotropic conductive adhesive and electronic device using the same
JP3660858B2 (en) * 2000-06-01 2005-06-15 ニチバン株式会社 Oil surface adhesive thermosetting composition
JP4363844B2 (en) * 2002-12-26 2009-11-11 ソニーケミカル&インフォメーションデバイス株式会社 Low temperature curable adhesive and anisotropic conductive adhesive film using the same
CN100368476C (en) * 2004-09-21 2008-02-13 广州宏昌胶粘带厂 Preparation of wide temperature range polyacry late/polyurethane/polysiloxane damping latex
JP4760069B2 (en) 2005-03-16 2011-08-31 日立化成工業株式会社 Adhesive composition, adhesive composition for circuit connection, circuit connection structure using the same, and semiconductor device
JP4760070B2 (en) 2005-03-16 2011-08-31 日立化成工業株式会社 Adhesive, adhesive for circuit connection, connector and semiconductor device
CN101541903B (en) * 2006-12-01 2013-04-17 日立化成株式会社 Adhesive and connection structure using the same
JP2008195852A (en) * 2007-02-14 2008-08-28 Hitachi Chem Co Ltd Film adhesive composition and joined structure in circuit terminal using the same composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000008021A (en) * 1998-06-18 2000-01-11 Nichiban Co Ltd Thermosetting adhesive composition and sheet made of the same
EP1076082A1 (en) * 1999-08-12 2001-02-14 Sony Chemicals Corporation Low-temperature setting adhesive and anisotropically electroconductive adhesive film using the same
CN1425192A (en) * 2000-04-25 2003-06-18 日立化成工业株式会社 Adhesive for circuit connection, circuit connection method using the same, and circuit connection structure
WO2006098352A1 (en) * 2005-03-16 2006-09-21 Hitachi Chemical Company, Ltd. Adhesive composition, circuit connecting material, connection structure of circuit member, and semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114585704A (en) * 2019-10-25 2022-06-03 日本化学工业株式会社 Conductive adhesive, adhesive structure using same, and electronic component
CN114585704B (en) * 2019-10-25 2024-01-30 日本化学工业株式会社 Conductive adhesive, adhesive structure using same, and electronic component

Also Published As

Publication number Publication date
CN101821352A (en) 2010-09-01
TWI441888B (en) 2014-06-21
TWI509044B (en) 2015-11-21
KR101187092B1 (en) 2012-09-28
CN101821352B (en) 2013-06-19
TW201141978A (en) 2011-12-01
CN102977798B (en) 2015-04-29
JP2013007040A (en) 2013-01-10
CN103351829A (en) 2013-10-16
TW200930781A (en) 2009-07-16
JPWO2009031472A1 (en) 2010-12-16
WO2009031472A1 (en) 2009-03-12
KR20090128383A (en) 2009-12-15
KR20110082092A (en) 2011-07-15
TW201435029A (en) 2014-09-16
JP5456475B2 (en) 2014-03-26
TWI408198B (en) 2013-09-11
JP2011231334A (en) 2011-11-17

Similar Documents

Publication Publication Date Title
CN101821352B (en) Adhesive and connecting structure using the same
CN102559072B (en) The syndeton of adhesive composite, film-like adhesive and circuit block
CN102533136B (en) Adhesive composition, and connection structure for circuit member
CN101541903B (en) Adhesive and connection structure using the same
CN101802118B (en) Adhesive composition and bonded body
CN102791820B (en) Adhesive composition, use thereof, connection structure for circuit members, and method for producing same
CN103589384B (en) The manufacture method of adhesive composite, connection structural bodies, connection structural bodies and the application of adhesive composite
CN101955736B (en) Adhesive composition and connecting structure
CN104169389A (en) Circuit connection material, circuit connection structure, adhesive film, and wound body
CN103764776A (en) Adhesive composition and connection body
CN103351838A (en) Adhesive composition, connection structure, method for producing connection structure, and use of adhesive composition
CN102597153B (en) Adhesive composition, circuit connecting structure, semiconductor device
CN102399526A (en) Adhesive composition, circuit connection structure, semiconductor device, and solar cell module
CN103814100A (en) Adhesive composition, adhesive film, adhesive sheet, circuitry connector, method for connecting circuitry member, use of adhesive composition, use of adhesive film, and use of adhesive sheet
CN101955735A (en) Adhesive composite and the syndeton body that uses the circuit block of said composition

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: Japan Tokyo Chiyoda Marunouchi yidingmu 9 No. 2

Applicant after: Hitachi Chemical Co., Ltd.

Address before: Tokyo, Japan, Japan

Applicant before: Hitachi Chemical Co., Ltd.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: HITACHI CHEMICAL CO. LTD. TO: HITACHI CHEMICAL CO., LTD.

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150429

Termination date: 20200829

CF01 Termination of patent right due to non-payment of annual fee