CN102971866B - 用于太阳能电池的转换材料 - Google Patents

用于太阳能电池的转换材料 Download PDF

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CN102971866B
CN102971866B CN201180034605.7A CN201180034605A CN102971866B CN 102971866 B CN102971866 B CN 102971866B CN 201180034605 A CN201180034605 A CN 201180034605A CN 102971866 B CN102971866 B CN 102971866B
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CN102971866A (zh
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C.R.龙达
D.K.G.德博尔
A.梅杰林克
N.克里斯托吉安尼斯
D.比伦
W.库尔
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Koninklijke Philips NV
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02322Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02581Transition metal or rare earth elements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

本发明涉及使用Sm2+的用于太阳能电池的转换材料。

Description

用于太阳能电池的转换材料
技术领域
本发明涉及用于太阳能电池的转换材料(converter material)。
背景技术
现有技术太阳能电池由于各种原因无法实现理论效率(由所谓“肖克利-奎伊瑟”极限所确定)。因此,通过或者改变太阳能电池材料或者添加另外成份等,已经进行许多尝试来提高太阳能电池的效率。可替换地,太阳能电池的成本可以通过使用太阳能集中器来降低。随着每Wp的成本降低,两种措施都具有增加太阳能电池的使用的潜在性。
太阳能电池增大的一个策略是引入转换材料,该转换材料(最期望地)具有在期望波长区域中的宽带吸收和线发射。然而已知的转换材料不是很多,并且因此存在对可替换转换材料的不断需求。这些材料用在所谓的发光太阳能集中器(LSC)中。阳光投射在大区域上,被转换为更长波长的光并且随后被引导到光伏元件。以此方式,可以显著减小将被使用的昂贵的光伏材料的数量。
发明内容
本发明的目的是提供一种用于太阳能电池的转换材料,其能够降低成本,并且通过在合适波长区域中的宽带吸收和线发射而增大太阳能电池的深蓝/UV辐射的转换效率。
此目的是通过根据本发明的用于太阳能电池的转换材料实现。因此,提供一种用于太阳能电池的转换材料,其包括Sm2+掺杂的无机材料。
令人惊奇地发现,对于在本发明内的宽范围应用,这种用于太阳能电池的转换材料具有下述优点中的至少其一:
包括Sm2+的材料对于许多应用采用大的斯托克斯频移;
当低于400nm太阳能电池的转换效率迅速降低时,效率增大;
当本发明材料在诸如LSC的太阳能电池中使用时,太阳能电池的成本降低;
另外,许多本发明材料表现出宽的可调谐吸收谱;
在大多数本发明材料中可以观察到线发射,这防止了重新吸收(禁戒跃迁);
另外已经发现,所述线发射(几乎)不依赖于主晶格,使得能够与干涉过滤器组合使用超过一种发光材料(以吸收尽可能多的阳光),从而保持太阳能电池内的发射。
优选地用于太阳能电池的转换材料选自包括下述的群组:氧化物、氮化物、氧氮化物、硼化物、硼酸盐、磷酸盐材料及其混合物。这些材料已经在实践中被发现是有利的。附加地或可替换地,根据本发明的另一实施例,转换材料选自包括下述的群组:含有碱金属和/或碱土金属的材料。
根据本发明的优选实施例,转换材料带隙为≥4.5eV。这对于许多应用是有利的,因为随后已经发现,在带隙值太小的材料中,受激发的Sm2+离子容易氧化为Sm3+并且这导致发射的猝灭。优选地转换材料带隙为≥5eV。
根据优选实施例,未掺杂材料为无色材料,其在用Sm2+掺杂时变为有色。
术语“无色”特别是指和/或包括该材料在可见波长区域中不具有吸收或者吸收≤10%,而术语“有色”相反地特别是指和/或包括该材料在可见波长区域中具有吸收和/或发射(优选地大于50%)。
根据优选实施例,转换材料包括碱土金属硼酸盐,优选地结构为EA1-xB4O7:Smx的材料,EA为碱土金属或碱土金属的混合物。优选地EA为Sr和/或Ba。
此材料已经在实践中表现为非常良好的转换材料,如下文所将描述。
本发明进一步涉及Sm2+在用于太阳能电池的转换材料中作为吸收体和/或发射体的用途。
另外本发明涉及一种太阳能电池,其使用本发明材料或者利用Sm2+在用于太阳能电池的转换材料中作为吸收体和/或发射体。
优选地转换材料以纳米颗粒形式被提供在所述太阳能电池中,优选地平均颗粒尺寸为≥1nm且≤1μm,优选地≥100nm且≤500nm,最优选地≥50nm且≤100nm。当转换体(converter)存在于光导中时这是特别有利的,因为假设光导和磷光体材料的折射率(n)匹配(典型地△n<0.05),散射损失以此方式被减小。
可替换地转换材料以粒子形式被提供在所述太阳能电池中,平均颗粒尺寸为≥1μm,更优选地≥5μm。当转换层相对于光的方向置于光导之下时,这种布置是特别有利的。
前述成份、以及所要求保护的成份和依据本发明在所描述实施例中将使用的成份,在它们的尺寸、形状、材料选择和技术构思方面不受到任何特殊的例外,使得相关领域中已知的选择准则可以不受限制地被应用。
附图说明
本发明目的的附加细节、特征、特性和优点在从属权利要求、附图以及下述对各图和示例的描述中公开,所述图和示例以示例性方式示出根据本发明的用于太阳能电池的转换材料的若干实施例和示例。
图1示出根据本发明的发明材料的发射光谱(示例I)。
图2示出图1的材料的激发光谱。
具体实施方式
通过下述发明示例将进一步理解本发明,所述发明示例纯粹是仅仅用于说明本发明并且不是限制性的。
示例I
示例I涉及SrB4O7:Sm2+,其按下述方式制成:
Sm2O3、SrCO3、H3BO3(10%过量)的化学计量比混合物在还原气氛(H2/N2)中在850°C烧制20小时。通过X射线衍射技术检查样品,并且它们的相纯度被确认。
图1示出SrB4O7:Sm2+的发射光谱,图2示出SrB4O7:Sm2+的激发光谱。可以清楚地看出,由于材料的宽带吸收和线发射以及宽的斯托克斯频移的原因,此材料是一种在用于太阳能电池的转换材料中使用的出色材料。
上文详细实施例中的元件和特征的具体组合仅仅是示例性的;这些教导与此专利和通过引用被结合的专利/申请中的其它教导的互换和替代也明确被考虑。本领域技术人员将理解,对此处所描述内容进行的变动、调整和其它实施方式可以被本领域普通技术人员所想到,而不背离所要求保护的本发明的精神和范围。因此,前述说明书仅仅是示例的方式并且不是旨在限制。在权利要求中,措词"包括"不排除其它元件或步骤,并且不定冠词"一"("a"或"an")不排除多个。在互不相同的从属权利要求中陈述某些措施的纯粹事实并不指示无法有利地使用这些措施的组合。本发明的范围在下述权利要求及其等同特征中定义。另外,说明书和权利要求中使用的附图标记不限制所要求保护的本发明的范围。

Claims (7)

1.一种太阳能电池,包括发光太阳能集中器,该发光太阳能集中器包括转换材料,其中所述转换材料包括Sm2+掺杂的无机材料并且带隙为≥4.5eV。
2.如权利要求1所述的太阳能电池,其中所述转换材料选自由下述组成的群组:氧化物、氮化物、氧氮化物、硼化物、硼酸盐、磷酸盐材料及其混合物。
3.如权利要求1所述的太阳能电池,其中所述转换材料选自由下述组成的群组:含有碱金属的材料、含有碱土金属的材料及其混合物。
4.如权利要求1所述的太阳能电池,其中所述转换材料的发射的衰减时间≥50µs。
5.如权利要求1所述的太阳能电池,其中所述转换材料为有色材料,该有色材料是通过对未掺杂材料掺杂Sm2+形成的。
6.如权利要求1所述的太阳能电池,其中所述转换材料包括碱土金属硼酸盐。
7.如权利要求1所述的太阳能电池,其中所述发光太阳能集中器包括所述转换材料的纳米颗粒。
CN201180034605.7A 2010-07-13 2011-07-05 用于太阳能电池的转换材料 Expired - Fee Related CN102971866B (zh)

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