TW201222839A - Converter material for solar cells - Google Patents

Converter material for solar cells Download PDF

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Publication number
TW201222839A
TW201222839A TW100124834A TW100124834A TW201222839A TW 201222839 A TW201222839 A TW 201222839A TW 100124834 A TW100124834 A TW 100124834A TW 100124834 A TW100124834 A TW 100124834A TW 201222839 A TW201222839 A TW 201222839A
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Prior art keywords
converter material
converter
solar cell
materials
solar
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TW100124834A
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Cornelis Reinder Ronda
Boer Dirk Kornelis Gerhardus De
Andries Meijerink
Nikolaos Christogiannis
Danielle Beelen
Wilhelmus Cornelis Keur
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Koninkl Philips Electronics Nv
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Luminescent Compositions (AREA)

Description

201222839 六、發明說明： 【發明所屬之技術領域】 本發明係關於太陽能電池之轉換器材料。 【先前技術】 當前最先進技術之太陽能電池由於各種原因而無法達成 理論效率（如由所謂「Sh〇ckley-Queisser」極限決定）。因 此已藉由改變太陽能電池材料或增添進一步組分等等而進 行許多嘗試以增加太陽能電池效率。或者，可藉由使用太 陽能聚能器而減少太陽能電池成本。由於每贾口之成本降 低’兩種措施皆有可能增加太陽能電池之使用率。 增加太陽能電池的一個策略是引入（最令人期望地）在所 期望波長區域内具有寬頻吸收及線發射的轉換器材料。然 而，已知的轉換器材料並不多且因此不斷需要替代性轉換 器材料。A等材料被使用於所謂發光太陽能聚能器（lsc) 中。太陽光照射到-大區域上，被轉換成較長波長的光且 隨後被導引至光伏打元件。以此方式可在相當大程度上減 少待使用的昂貴光伏打材料的量。 【發明内容】 本發明之一目的係提供一種用於太陽能電池之轉換器材 料’其可降低成本並且藉由在合適波長區域内的寬頻吸收 及線發射而增加太陽能電池之深藍/UV輻射轉換的效率。 由根據本發月之技術方案j的用於太陽能電池之一轉換 器材料解決此目的。相應地’提供-種包括Sm2+摻雜型無 機材料的用於太陽能電池之轉換器材料。
S I57400.doc 201222839 令人驚舒的是，已發現用於太陽能電池之此一轉換器材 料對於在本發明内之廣泛應用範圍具有下列優點之至少一 者·· -包括Sm2+的材料對於許多應㈣用__大的斯托克斯 (Stokes)位移。 ，由於在400⑽以下太陽能電池的轉換效率迅速降低， 效率增加。 -當在太陽能電池（諸如Lsc)中使用發明材料時太陽能 電池之成本降低。 此外許多發明材料展現一寬廣的可調譜吸收光譜。 -在大多數發明材料中可觀察到防止再吸收（禁制躍遷） 的線發射。 _此外已發現該線發射（幾乎）獨立於主晶格，使得能夠 與干涉遽光器組合使用一個以上發光材料(以吸收儘 可能多的太陽光），以保持太陽能電池内之發射。 太陽能電池之轉換器材料較佳係選自包括氧化物材料、 氮化物材料、氮氧化物材料、硼化物材料、硼酸鹽材料、 填酸鹽材料及其等之混合物之群組。已在實踐中發現此等 材料是有利的…卜或替代地，根據本發明之另一實施 例’該轉換器材料係選自包括含驗材料及/或含土驗= 之群組。 根據本發明之一較佳實施例，該轉換器材料具有⑷ eV之-能帶間隙。自從在具有過小能帶間隙值之材料中發 現受激發之離子易於氧化為^且此導致發射泮滅: 157400.doc 201222839 該轉換器材料具有从5 eV之一能帶間隙對許多應用是有 刺的。該轉換器材料較佳具有a eV之一能帶間隙。 根據一較佳實施例，未經摻雜型材料係—非著色材料， 其在用Sm2+摻雜時經著色。 、術語「非著色」特別意謂及/或包含材料在可見波長區 域内無吸收或吸收率S10%，而相反地術語「著色」特別 意謂及/或包含材料在可見波長區域内具有（較佳大於5〇% 的）一吸收率及/或發射率。 根據一較佳實施例，轉換器材料包括土鹼硼酸鹽，較佳 為具有EA^BWhSmx結構的材料，EA為土鹼金屬或土鹼 金屬混合物。EA較佳為Sr及/或Ba。 如稍後將描述，此材料已在實踐中展現為一極佳轉換器 材料。 本發明另外係關於Sm2+作為太陽能電池之轉換器材料中 之吸收體及/或發射體之用途。 另外本發明係關於使用發明材料或利用Sm2+作為太陽能 電池之轉換器材料中之吸收體及/或發射體的一太陽能電 池。 '該轉換器材料較佳係以奈米粒子形式提供於該等太陽能 . 電池内，較佳具有nm且S1 μιη，較佳>100 nm且$500 nm，最佳250 nm且$1〇〇 nm的一平均粒度。由於以此方式 減少散射4貝耗’此在轉換器存在於一光導中時特別有利， 刖提是光導與填光體材料之折射率（n)匹配（通常 △n<0.05)。
S 157400.doc 201222839 或者該轉換器材料係以具有μιη，更佳25 μιη之一平 均粒度之顆粒的形式提供於該等太陽能電池内。當轉換層 相對於光方向定位於光導下方時此配置特別有利。 先前提及之組件以及所主張之組件及在所描述實施例中 根據本發明使用的組件在其等大小、形狀、材料選擇及技 術概念上無任何特殊例外，使得可在無限制的情況下應用 相關領域内的已知選擇準則。 【實施方式】 在附屬請求項、圖式及各自圖式及實例之下列描述中揭 示本發明之目的之額外細節、特徵、特性及優點，該等圖 式及貫例以例示性方式展示根據本發明的太陽能電池之轉 換器材料之若干實施例及實例。 另外將藉由下列發明實例理解本發明，下列發明實例僅 為闡釋本發明而非限制。
實例I 實例I涉及SrB4〇7:Sm2+’其係以下列方式製造： 在逛原氣氛（h2/n2)中以850〇c燒製Sm2〇3、SrC〇3、 ΗΘΟ3(超過丨〇%)之化學計量混合物長達小 時。由X射線 繞射技術檢查樣本並且證實其等之相純度。 圖1展示發射光譜，圖2展示SrB4〇7:Sm2+的激發光譜。 可π邊看到’歸因於此材料之寬頻吸收及線發射以及一寬 廣的斯托克斯位移’該材料係用在太陽能電池之轉換器材 料中的一極佳材料。 在上文詳細實施例中的元件及特徵的特定組合僅為例示 157400.doc 201222839 性；亦明確預期此等 广 ^ 孚教不與本專利/申請案及以引用方式 併入的專利及申諳索φ '、中的其他教示互換及替代。如熟習此 一 2者將認識到，在不脱離所主張的本發明之精神及範 可的w下’―般技術者可想到本文所述者的變動、修改 及其他貫施方荦。相處从 ^ /、相應地，别述描述僅為實例且不意欲為 限制性。在申請專利範圍中 y. ^ r u^包括」不排除其他元 件或步驟’且不定冠詞「一」或「一個」不排除複數個。 互不相同的附屬請求項中引述某些措施，該純粹事實不指 不無法有利使用此等措施之一組合。在下列請求項及其等 效物中定義本發明之範傳。此外，在描述及請求項中使用 的參考符號不限制所主張發明的範疇。 【圖式簡單說明】 圖1展示根據本發明之一發明材料的一發射光譜（實 I) 例 圖2展示圖1之材料的激發光譜。 157400.doc
S

Claims (1)

  1. 201222839 七、申請專利範圍： 1· 一種包括Sm2+摻雜型無機材料的用於太陽能電池之轉換 器材料。 2. 如請求項丨之太陽能電池之轉換器材料，其中該太陽能 電池之轉換器材料係選自包括氧化物材料、說化物材 料、氮氧化物材料、硼化物材料、硼酸鹽材料、磷酸鹽 材料及其等之混合物之群組。 3. 如請求項1或2之太陽能電池之轉換器材料，其中該轉換 器材料係選自包括含鹼材料及/或含土鹼材料之群組。 4·如請求項1或2之太陽能電池之轉換器材料，其中該轉換 器材料具有24.5 eV的一能帶間隙。 5·如請求項1至4中任一項的太陽能電池之轉換器材料，其 中該轉換器材料之發射具有25〇 口5之—衰減時間。 6. 如請求項丨至5中任一項的太陽能電池之轉換器材料，其 中未經摻雜型材料為一非著色材料，其在用31^+摻雜時 經著色。 7. 如凊求項丨至6中任一項的太陽能電池之轉換器材料，其 中该轉換器材料包括土驗侧酸鹽。 8. —種將Sm2+作為太陽能電池之轉換器材料中之吸收體及/ 或發射體的用途》 9· -種包括如請求項7中任一項之一轉換器材料或利用 請求項8的太陽能電池。 10-如請求項9之太陽能電池，其令該轉換器材料係以奈米 粒子形式提供。 1574〇0,oc 5
TW100124834A 2010-07-13 2011-07-13 Converter material for solar cells TW201222839A (en)

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