JP6216812B2 - 太陽光発電機 - Google Patents
太陽光発電機 Download PDFInfo
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- JP6216812B2 JP6216812B2 JP2016020890A JP2016020890A JP6216812B2 JP 6216812 B2 JP6216812 B2 JP 6216812B2 JP 2016020890 A JP2016020890 A JP 2016020890A JP 2016020890 A JP2016020890 A JP 2016020890A JP 6216812 B2 JP6216812 B2 JP 6216812B2
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- 238000004020 luminiscence type Methods 0.000 claims description 21
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- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 14
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- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
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- 238000006243 chemical reaction Methods 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
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- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
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- GMSCBRSQMRDRCD-UHFFFAOYSA-N dodecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCOC(=O)C(C)=C GMSCBRSQMRDRCD-UHFFFAOYSA-N 0.000 description 2
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 2
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- 229950011008 tetrachloroethylene Drugs 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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- 150000004756 silanes Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Photovoltaic Devices (AREA)
- Manufacturing & Machinery (AREA)
Description
(1)板によって吸収されない光、
(2)エスケープコーン(escape cone)内に再放出され、それにより、板を出る光、
(3)色素の、1より低い量子効率、
(4)色素の吸収及び放出帯域のスペクトル重複による放出された光の再吸収に起因する損失メカニズムのためである。再吸収が、主な損失メカニズムである。なぜなら、それは、損失メカニズム(2)及び(3)が生じる新たな機会をもたらすからである。
(a)例えばPbSeのMSCの放出が、一般に、(経済的観点及び実際的観点から、LSCにおける使用のための最も魅力的な候補である)従来のシリコン太陽電池の最適効率範囲と非常に適合する700乃至900nmの範囲内にある。
(b)MSCの吸収帯域が広く、入って来る太陽放射線の大部分の吸収に有利である(図3の左側曲線参照)。
(c)吸収帯域と放出帯域との間の重複が小さく、これは、例えば量子ドット又は色素と比べて、MSCの重要な利点である(図3参照)。
(d)PbSeのMSCの量子効率(QE)が、現在、50乃至90%に及ぶ(Evans, Nano Letters 2008, 2896)。このQEは、最適化された反応条件によって、又はPbSeのMSCのまわりに不動態化有機又は無機コーティングを付すことによって、更に高められ得ることが期待される。しかしながら、CdSeのMSCは、より低いQEを持つかもしれない(Bowers他, JACS 2005, 127, 15378)。
(e)MSCの合成が、室温で、簡単であり、例えばグラム量へのアップスケーリングを可能にする。合成の収率は、反応を連続プロセスに変えることによって、又は反応していない前駆体材料を再利用することによって、高められ得ることに注意されたい。
Claims (17)
- 発光体の、MSCと呼ばれるマジックサイズクラスタ、を有する発光変換器を有する発光型太陽集光器と、
前記発光変換器の光放出を受け取るよう配設される光電池とを有し、
前記MSCは、3nm以下の直径を持ち、且つ
前記マジックサイズクラスタは、PbSe、PbTe、及びPbSから成るグループから選択される化合物を有する、
太陽光発電機。 - 前記MSCが、対称性の結晶であることを特徴とする請求項1に記載の太陽光発電機。
- 前記MSCが、コーティングで覆われることを特徴とする請求項1又は2に記載の太陽光発電機。
- 前記コーティングが、有機材料及び/又は無機半導体を含む、請求項3に記載の太陽光発電機。
- 前記無機半導体が、PbSを有する、請求項4に記載の太陽光発電機。
- 前記MSC、又は前記MSCのコーティングが、線放出ドーパントを有することを特徴とする請求項1乃至5のいずれか一項に記載の太陽光発電機。
- 前記線放出ドーパントが、希土類元素を有する、請求項6に記載の太陽光発電機。
- 前記希土類元素が、Nd、Dy、Ho、Er又はTmを有する、請求項7に記載の太陽光発電機。
- MSCが、異なるサイズを持つことを特徴とする請求項1乃至8のいずれか一項に記載の太陽光発電機。
- 前記MSCのサイズ分布が、異なるサイズのMSC間で放射又は非放射エネルギ伝達が行われ得るように選択される、請求項9に記載の太陽光発電機。
- より大きいサイズのMSCの密度が、より小さいサイズのMSCの密度より低いことを特徴とする請求項9又は10に記載の太陽光発電機。
- 前記MSCの密度が、前記発光変換器内で空間的に一様でないことを特徴とする請求項1乃至11のいずれか一項に記載の太陽光発電機。
- 前記MSCの密度が、前記発光変換器の縁の近くで、より低い値を持つ、請求項12に記載の太陽光発電機。
- 前記MSC以外に、さらに、有機色素、無機蛍光体、又は量子ドット若しくは量子ロッドを有することを特徴とする請求項1乃至13のいずれか一項に記載の太陽光発電機。
- 前記MSCによって放出される光を目標位置へ案内するための導光素子を有することを特徴とする請求項1乃至14のいずれか一項に記載の太陽光発電機。
- 前記導光素子が、ガラス又はポリマ製であることを特徴とする請求項15に記載の太陽光発電機。
- 前記MSCが、前記導光素子に埋め込まれること、及び/又は前記MSCが、前記導光素子の表面上の薄膜に埋め込まれることを特徴とする請求項15又は16に記載の太陽光発電機。
Applications Claiming Priority (2)
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EP10158154 | 2010-03-29 | ||
EP10158154.4 | 2010-03-29 |
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JP2013502004A Division JP2013529372A (ja) | 2010-03-29 | 2011-03-24 | 発光変換器 |
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JP2016131249A JP2016131249A (ja) | 2016-07-21 |
JP6216812B2 true JP6216812B2 (ja) | 2017-10-18 |
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US (1) | US20130192664A1 (ja) |
EP (1) | EP2553048B1 (ja) |
JP (2) | JP2013529372A (ja) |
CN (1) | CN102822314B (ja) |
BR (1) | BR112012024495B1 (ja) |
WO (1) | WO2011121503A1 (ja) |
Cited By (1)
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JP7141373B2 (ja) | 2019-08-26 | 2022-09-22 | 東芝三菱電機産業システム株式会社 | 固定子トルク伝達構造、電動機駆動システム、固定子トルク伝達構造の組み立て・分解方法、および固定子トルク伝達構造の分解治具 |
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JP2013110356A (ja) * | 2011-11-24 | 2013-06-06 | Sharp Corp | 太陽電池モジュール及び太陽光発電装置 |
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US10510914B2 (en) | 2013-03-21 | 2019-12-17 | Board Of Trustees Of Michigan State University | Transparent energy-harvesting devices |
EP3047526B1 (en) * | 2013-12-23 | 2018-07-25 | Novartis AG | Power source for an accommodating intraocular lens |
TWI575766B (zh) * | 2015-05-05 | 2017-03-21 | 飛立威光能股份有限公司 | 光伏系統及其製造方法 |
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ITUA20162918A1 (it) * | 2016-04-27 | 2017-10-27 | Univ Degli Studi Di Milano Bicocca | Concentratore solare luminescente ad ampia area a base di nanocristalli semiconduttori a gap energetico indiretto |
KR102000772B1 (ko) * | 2016-05-04 | 2019-07-16 | 서강대학교산학협력단 | 집광 장치 패널을 포함하는 염료감응 태양전지 |
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CA2598038C (en) * | 2005-02-16 | 2014-09-23 | Stichting Voor De Technische Wetenschappen | Luminescent object and utilisation thereof |
GB0522027D0 (en) * | 2005-10-28 | 2005-12-07 | Nanoco Technologies Ltd | Controlled preparation of nanoparticle materials |
US8337721B2 (en) * | 2005-12-02 | 2012-12-25 | Vanderbilt University | Broad-emission nanocrystals and methods of making and using same |
WO2009120688A1 (en) | 2008-03-24 | 2009-10-01 | University Of Rochester | Magic size nanoclusters and methods of preparing same |
US7888855B2 (en) * | 2008-07-16 | 2011-02-15 | Los Alamos National Security, Llc | Mixed semiconductor nanocrystal compositions |
US8314325B2 (en) * | 2008-08-19 | 2012-11-20 | Sabic Innovative Plastics Ip B.V. | Luminescent solar collector |
IL193701A (en) * | 2008-08-26 | 2015-01-29 | Renata Reisfeld | Glowing sun rays center |
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2011
- 2011-03-24 JP JP2013502004A patent/JP2013529372A/ja active Pending
- 2011-03-24 EP EP11721110.2A patent/EP2553048B1/en active Active
- 2011-03-24 WO PCT/IB2011/051256 patent/WO2011121503A1/en active Application Filing
- 2011-03-24 US US13/637,909 patent/US20130192664A1/en not_active Abandoned
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- 2011-03-24 CN CN201180016969.2A patent/CN102822314B/zh active Active
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7141373B2 (ja) | 2019-08-26 | 2022-09-22 | 東芝三菱電機産業システム株式会社 | 固定子トルク伝達構造、電動機駆動システム、固定子トルク伝達構造の組み立て・分解方法、および固定子トルク伝達構造の分解治具 |
Also Published As
Publication number | Publication date |
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EP2553048A1 (en) | 2013-02-06 |
EP2553048B1 (en) | 2017-08-16 |
JP2013529372A (ja) | 2013-07-18 |
WO2011121503A1 (en) | 2011-10-06 |
BR112012024495B1 (pt) | 2020-05-19 |
CN102822314B (zh) | 2016-03-02 |
JP2016131249A (ja) | 2016-07-21 |
CN102822314A (zh) | 2012-12-12 |
BR112012024495A2 (pt) | 2017-12-05 |
US20130192664A1 (en) | 2013-08-01 |
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