CN102967813A - Testing structure and testing method - Google Patents
Testing structure and testing method Download PDFInfo
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- CN102967813A CN102967813A CN2011102557389A CN201110255738A CN102967813A CN 102967813 A CN102967813 A CN 102967813A CN 2011102557389 A CN2011102557389 A CN 2011102557389A CN 201110255738 A CN201110255738 A CN 201110255738A CN 102967813 A CN102967813 A CN 102967813A
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Abstract
A testing structure comprises two comb-shaped testing circuits, wherein comb tooth metal lines of the comb-shaped testing circuits are staggered and embedded mutually, at least one side of each comb tooth metal line is connected with a plurality of testing units parallel or perpendicular to the comb tooth metal lines, and adjacent testing units of different comb-shaped testing circuits are oppositely arranged. The invention further provides a testing method utilizing the testing structure. By measuring breakdown voltage of a plurality of testing structures adopting different testing units or a plurality of testing structures adopting the same testing units with different separation distances, the influence level of arrangement of different metal interconnecting lines on the breakdown voltage is tested according to the breakdown voltage between the comb-shaped testing circuits and the type of the testing units corresponding to the comb-shaped testing circuits.
Description
Technical field
The present invention relates to the reliability testing of semiconductor technology, particularly a kind of test structure and method of testing that detects voltage breakdown.
Background technology
In the existing semiconductor technology, usually use the multiple layer metal interconnecting construction so that various device electricity connects, utilize the good dielectric material electricity isolation of insulating property between the described metal interconnecting wires.The reliability of multiple layer metal interconnecting construction all is vital for whole IC manufacturing process yield, properties of product and reliability, therefore, to inter-level dielectric (Inter-and Intra-Layer Dielectrics, ILD) and with the test of the voltage breakdown of the medium (Time dependent Dielectric Breakdown, TDDB) of time correlation also just become test event very important in the reliability testing.In reliability testing, by adjacent metal interconnecting wires is applied voltage, cause the copper ion diffusion so that between the described adjacent metal interconnecting wires electric leakage occurs, and then so that the medium between the adjacent metal interconnecting wires is breakdown, so that the voltage that described medium occurs to puncture is the voltage breakdown of medium, described reliability testing is exactly the requirement whether voltage breakdown of tested media meets properties of product.
Publication number is the method for testing that the Chinese patent literature of CN101577265A discloses a kind of voltage breakdown, the voltage breakdown that the pectination test structure of employing metal interconnecting wires is as shown in Figure 1 tested the medium between the described metal interconnecting wires.In the pectination test structure shown in Figure 1, two comb test circuit are oppositely arranged, the phase embedding that interlocks of the broach metal wire of described two comb test circuit, and the distance between any two adjacent metal interconnecting wires equates, described metal wire separation is set according to design rule, namely meets the critical size between the interconnection line of design rule defined.In test process, apply test voltage by the two ends to described pectination test structure, and the leakage current between the while measuring circuit, when test voltage progressively increases, until leakage current is when suddenly rising, illustrate that medium is breakdown between two comb test circuit, the described test voltage that leakage current is suddenly risen is the voltage breakdown of pectination test structure.
But; described test structure can not be learnt the position of concrete puncture; and in the test of reality; the voltage breakdown that connects up between the two different strip metal interconnection lines even often can find spacing to equate may be not identical yet; so just need to analyze the metal interconnecting wires various wirings on the impact of voltage breakdown, to improve the IC manufacturing process.
Summary of the invention
The problem that the present invention solves provides a kind of test structure and method of testing that detects voltage breakdown, with the wiring of the test different metal interconnection line influence degree to voltage breakdown.
For addressing the above problem, the embodiment of the invention provides a kind of test structure, comprise: two comb test circuit, the phase embedding that interlocks of the broach metal wire of described two comb test circuit, wherein, at least one side of each broach metal wire is connected with some parallel or perpendicular to the test cell of described broach metal wire, the adjacent test cell of different comb test circuit is arranged relatively.
Optionally, the test cell of described two comb test circuit all is the first metal wire that is parallel to described broach metal wire.
Optionally, the test cell of one of them comb test circuit is the second metal wire perpendicular to described broach metal wire, and the test cell of another comb test circuit is described broach metal wire.
Optionally, the test cell of described two comb test circuit all is the 3rd metal wire perpendicular to described broach metal wire.
Optionally, the spacing between the adjacent test cell of different comb test circuit is the minimum value of two spacings between the comb test circuit.
Optionally, except the spacing between the adjacent test cell of different comb test circuit, other spacings between described two comb test circuit are at least 2 times of spacing between the adjacent test cell of described different comb test circuit.
Optionally, be formed with medium between the different comb test circuit, described medium is monox or low-K dielectric material.
The embodiment of the invention also provides a kind of method of testing, comprising:
Some different test structures are provided;
Measure in the described test structure voltage breakdown between two comb test circuit;
According to the type of the test cell of the voltage breakdown between the described comb test circuit and corresponding comb test circuit, the wiring of test different metal interconnection line is to the influence degree of voltage breakdown.
Optionally, described different test structure comprises the first test structure, the second test structure, the 3rd test structure, the test cell of two comb test circuit of described the first test structure all is the first metal wire that is parallel to described broach metal wire, the test cell of one of them comb test circuit of described the second test structure is the second metal wire perpendicular to described broach metal wire, the test cell of another comb test circuit is described broach metal wire, and the test cell of two comb test circuit of described the 3rd test structure all is the first metal wire perpendicular to described broach metal wire.
Optionally, in the described different test structure, the spacing between the adjacent test cell of different comb test circuit equates.
Optionally, in same test structure, the spacing between the adjacent test cell of described different comb test circuit is the minimum value of two spacings between the comb test circuit.
Optionally, in same test structure, except the spacing between the adjacent test cell of different comb test circuit, other spacings between described two comb test circuit are at least 2 times of spacing between the adjacent test cell of described different comb test circuit.
Optionally, the method of measuring the voltage breakdown between the described comb test circuit is: apply test voltage between described two comb test circuit, and measure simultaneously leakage current between the described comb test circuit, progressively increase test voltage until leakage current suddenly rises, the test voltage when described leakage current suddenly rises is voltage breakdown.
Optionally, provide several to have the same test unit but the different test structure of spacing between the adjacent test cell, by measuring the voltage breakdown of described test structure, test out the variation of the spacing between the adjacent test cell to the influence degree of the voltage breakdown between the described test cell.
Optionally, provide several to have the same test unit but be used for the different test structure of dielectric layer of electricity isolation, measure by the voltage breakdown to described test structure, test out different media to the influence degree of voltage breakdown.
Compared with prior art, the present invention has the following advantages:
Utilize test structure of the present invention, the test structure of the different test cells of described employing has the wiring of different metal interconnecting wires, and the spacing between the adjacent test cell of the different comb test circuit of described three kinds of test structures equates, by measuring the voltage breakdown between the corresponding comb test circuit, just can test the wiring of different metal interconnection line to the influence degree of voltage breakdown.
Further, by changing the material of the medium between the described metal interconnecting wires, the voltage breakdown of the test structure that adopts different medium is measured, can be obtained different media to the influence degree of voltage breakdown.
Further, has the same test unit but the voltage breakdown of the test structure that spacing is different between the adjacent test cell can test out the variation of the spacing between the adjacent test cell to the influence degree of the voltage breakdown between the described test cell by measuring several.
Description of drawings
Fig. 1 is the structural representation of the pectination test structure of prior art;
Fig. 2 to Fig. 7 is the structural representation of the test structure of the embodiment of the invention;
Fig. 8 is the schematic flow sheet of the method for testing of the embodiment of the invention.
Embodiment
Because the test structure of prior art can only be tested two voltage breakdowns between the comb test circuit, can not analyze the position of concrete puncture and the wiring of metal interconnecting wires distributes on the impact of voltage breakdown, for this reason, the invention provides a kind of test structure, comprise: two comb test circuit, each comb test circuit comprises trunk metal wire and broach metal wire, the phase embedding that interlocks of the broach metal wire of described two comb test circuit, wherein, at least one side of each broach metal wire is connected with some parallel or perpendicular to the test cell of described broach metal wire, the adjacent test cell of different comb test circuit is arranged relatively.Owing to adopt the test structure of different test cells can be used for simulating the wiring distribution of different metal interconnection line, just can know the type of different test cells to the influence degree of voltage breakdown by testing described test structure, thereby analyze the wiring of different metal interconnection line to the influence degree of voltage breakdown.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Please refer to Fig. 2, be the structural representation of the first test structure 100 of first embodiment of the invention.Described the first test structure 100 comprises the first comb test circuit 110 and the second comb test circuit 120, described two comb test circuit are oppositely arranged, the second broach metal wire 121 staggered mutually embeddings of the first broach metal wire 111 of described the first comb test circuit 110 and described the second comb test circuit 120.One side of described the first broach metal wire 111 is connected with some test cells, and described test cell is first metal wire 112 parallel with described the first broach metal wire 111; One side of described the second broach metal wire 121 also is connected with some test cells, and described test cell is first metal wire 122 parallel with described the second broach metal wire 121.
Described the first metal wire 112 and the first metal wire 122 are oppositely arranged and are parallel to each other, each bar first metal wire 112 and the first metal wire 122 corresponding arrangements, interval S 1 between described the first metal wire 112 and the first metal wire 122 is decided according to design rule or detection rule, in the present embodiment, interval S 1 is the critical size (Critical Dimension, CD) between the metal interconnecting wires that meets design rule.And the interval S 1 between described the first metal wire 112 and the first metal wire 122 is the minimum value of the spacing between described the first comb test circuit 110 and the second comb test circuit 120.Except interval S 1, other spacings between described the first comb test circuit 110 and the second comb test circuit 120 are at least 2 times of interval S 1, are at least 2 times of interval S 1 such as the spacing of the spacing of the spacing of the broach metal wire of a comb test circuit and another comb test circuit, adjacent broach metal wire, first metal wire 112 and clinodiagonal another the first metal wire 122 etc.The medium that is used for isolation the first comb test circuit and the second comb test circuit in the embodiment of the invention is monox or low-K dielectric material.
The weak point because the interval S 1 between described the first metal wire 112 and the first metal wire 122 is compared with other spacings, other spacings between described the first comb test circuit 110 and the second comb test circuit 120 are at least 2 times of interval S 1, electric field intensity between described the first metal wire 112 and the first metal wire 122 is maximum, medium between described the first metal wire 112 and the first metal wire 122 is the easiest to be breakdown, therefore when described the first test structure 100 occurs to puncture, the voltage breakdown of this moment is two voltage breakdowns between the parallel metal lines, thereby can test out the parallel metal interconnection line to the influence degree of the voltage breakdown of medium between the described parallel metal interconnection line.
In other embodiments, please refer to Fig. 3, for the first test structure 100 of first embodiment of the invention ' structural representation, described test cell 112 is positioned at the both sides of the first broach metal wire 111 of described the first comb test circuit 110, described test cell 122 is positioned at the both sides of the second broach metal wire 121 of described the second comb test circuit 120, increase the density of test cell, improved the accuracy of net result.
In addition, spacing between the adjacent test cell of same comb test circuit also may impact voltage breakdown, by adjusting the spacing between the described adjacent test cell, can test out the variation of the spacing between the adjacent test cell to the influence degree of the voltage breakdown between the described test cell.
Please refer to Fig. 4, be the structural representation of the second test structure 200 of second embodiment of the invention.Described the second test structure 200 comprises the first comb test circuit 210 and the second comb test circuit 220, described two comb test circuit are oppositely arranged, the second broach metal wire 221 staggered mutually embeddings of the first broach metal wire 211 of described the first comb test circuit 210 and described the second comb test circuit 220.Wherein, a side of described the first broach metal wire 211 is connected with some test cells, and described test cell is second metal wire 212 vertical with described the first broach metal wire 211; The test cell of described the second comb test circuit 220 is that the second broach metal wire 221 is own.
Described the second metal wire 212 and the 221 vertical settings of the second broach metal wire.Interval S 2 between the top of described the second metal wire 212 and the second broach metal wire 221 is decided according to design rule or detection rule, in the present embodiment, interval S 2 is the critical size (Critical Dimension, CD) between the metal interconnecting wires that meets design rule.And the interval S 2 between the top of described the second metal wire 212 and the second broach metal wire 221 is the minimum value of spacing between described the first comb test circuit 210 and the second comb test circuit 220.Except interval S 2, other spacings between described the first comb test circuit 210 and the second comb test circuit 220 are at least 2 times of described interval S 2, are at least 2 times of described interval S 2 such as spacing of the spacing of the broach metal wire of a comb test circuit and another comb test circuit, adjacent broach metal wire etc.
The weak point because the top of described the second metal wire 212 and the interval S 2 between the second broach metal wire 221 are compared with other spacings, other spacings between described the first comb test circuit 210 and the second comb test circuit 220 are at least 2 times of described interval S 2, electric field intensity between the top of described the second metal wire 212 and the second broach metal wire 221 is maximum, medium between the top of described the second metal wire 212 and the second broach metal wire 221 is the easiest to be breakdown, therefore when described test structure 200 occurs to puncture, the voltage breakdown of this moment is voltage breakdown between mutually perpendicular the second metal wire 212 and the second broach metal wire 221, thereby can test out a metal wire top and another metal wire vertical with described metal wire to the influence degree of the voltage breakdown of medium between described two vertical metal interconnection lines.
In other embodiments, please refer to Fig. 5, for the second test structure 200 of second embodiment of the invention ' structural representation, described test cell 212 is positioned at the both sides of described the first broach metal wire 211, increase the density of test cell, improved the accuracy of net result.
In other embodiments, the type of the test cell of the first comb test circuit and the second comb test circuit can exchange, the test cell that is described the first comb test circuit is the first broach metal wire itself, one side of described the second broach metal wire is connected with some test cells, and described test cell is second metal wire vertical with described the second broach metal wire.
In addition, spacing between the adjacent test cell in same comb test circuit also may impact voltage breakdown, by adjusting the spacing between the described adjacent test cell, can test out the variation of the spacing between the adjacent test cell to the influence degree of the voltage breakdown between the described test cell.
Please refer to Fig. 6, be the structural representation of the 3rd test structure 300 of third embodiment of the invention.Described the 3rd test structure 300 comprises the first comb test circuit 310 and the second comb test circuit 320, described two comb test circuit are oppositely arranged, the second broach metal wire 321 staggered mutually embeddings of the first broach metal wire 311 of described the first comb test circuit 310 and described the second comb test circuit 320.Wherein, a side of described the first broach metal wire 311 is connected with some test cells, and described test cell is three metal wire 312 vertical with described the first broach metal wire 311; One side of described the second broach metal wire 311 also is connected with some test cells, and described test cell is three metal wire 322 vertical with described the second broach metal wire 321.
Described the 3rd metal wire 312 and the 3rd metal wire 322 are oppositely arranged, and each article the 3rd metal wire 312 and one article of the 3rd metal wire 322 be corresponding to be arranged and be located along the same line.The interval S 3 on the top of the top of described the 3rd metal wire 312 and the 3rd metal wire 322 is decided according to design rule or detection rule, in the present embodiment, interval S 3 is the critical size (Critical Dimension, CD) between the metal interconnecting wires that meets design rule.And the interval S 3 on the top of the top of described the 3rd metal wire 312 and the 3rd metal wire 322 is the minimum value of spacing between described the first comb test circuit 310 and the second comb test circuit 320.Except interval S 3, other spacings between described the first comb test circuit 310 and the second comb test circuit 320 are at least 2 times of described interval S 3, are at least 2 times of described interval S 3 such as the spacing of the spacing of the spacing of the broach metal wire of a comb test circuit and another comb test circuit, the 3rd metal wire 322 and another the 3rd metal wire 312 of diagonally opposing corner direction, adjacent broach metal wire etc.
The weak point because the interval S 3 on the top of described the 3rd metal wire 312 and the top of the 3rd metal wire 322 is compared with other spacings, other spacings between described the first comb test circuit 310 and the second comb test circuit 320 are at least 2 times of described interval S 3, electric field intensity between the top of the top of described the 3rd metal wire 312 and the 3rd metal wire 322 is maximum, the easiest puncture of medium between the top of the top of described the 3rd metal wire 312 and the 3rd metal wire 322, therefore when described the 3rd test structure 300 occurs to puncture, the voltage breakdown of this moment be the voltage breakdown between the top of the top of collinear the 3rd metal wire 312 and the 3rd metal wire 322, thus test top at collinear two metal interconnecting wires to described top between the influence degree of voltage breakdown of medium.
In other embodiments, please refer to Fig. 7, for the 3rd test structure 300 of third embodiment of the invention ' structural representation.Described test cell 312 is positioned at the both sides of described the first broach metal wire 311, and described test cell 322 is positioned at the both sides of described the second broach metal wire 321, has increased the density of test cell, has improved the accuracy of net result.
In addition, spacing between the adjacent test cell in same comb test circuit also may impact voltage breakdown, by adjusting the spacing between the described adjacent test cell, can test out the variation of the spacing between the adjacent test cell to the influence degree of the voltage breakdown between the described test cell.
The embodiment of the invention also provides a kind of method of testing, please refer to Fig. 8, and the schematic flow sheet for described method of testing comprises:
Step S101 provides some different test structures;
Step S102 measures in the described test structure voltage breakdown between two comb test circuit;
Step S103, according to the type of the test cell of the voltage breakdown between the described comb test circuit and corresponding comb test circuit, the wiring of test different metal interconnection line is to the influence degree of voltage breakdown.
Execution in step S101 provides some different test structures.
Please refer to Fig. 2, Fig. 4, Fig. 6, described test structure is the first test structure 100 of first embodiment of the invention, the second test structure 200 of second embodiment of the invention and the 3rd test structure 300 of third embodiment of the invention.Perhaps please refer to Fig. 3, Fig. 5, Fig. 7, described test structure be first embodiment of the invention the first test structure 100 ', the second test structure 200 of second embodiment of the invention ' and the 3rd test structure 300 of third embodiment of the invention '.In order to narrate conveniently, the below is described in further detail take the first test structure 100, the second test structure 200, the 3rd test structure 300 as the method for testing of example to the embodiment of the invention.Interval S 1 in described three kinds of test structures, interval S 2, interval S 3 equate that the length of described interval S 1, interval S 2, interval S 3 is decided according to design rule or detection rule.In the present embodiment, the length of described interval S 1, interval S 2, interval S 3 all equals to meet the critical size between the metal interconnecting wires of design rule.By the test spacing is identical but the voltage breakdown between the different metal interconnecting wires of connecting up obtains the wiring of different metal interconnection line to the influence degree of voltage breakdown.
The test cell of described the first test structure 100 is parallel the first metal wire 112 and the first metal wire 122, can be used for testing the parallel metal interconnection line to the influence degree of the voltage breakdown of medium between the parallel metal interconnection line.The test cell of described the second test structure 200 is broach metal wire and second metal wire 212 vertical with described broach metal wire, can be used for testing a metal wire top and another metal wire vertical with described metal wire to the influence degree of the voltage breakdown of medium between described two vertical metal interconnection lines.The test cell of described the 3rd test structure 300 can be used for testing the influence degree of the voltage breakdown of medium between collinear two metal wire tops are to described top for being positioned at collinear the 3rd metal wire 312 and the 3rd metal wire 322.The medium that is used for isolation the first comb test circuit and the second comb test circuit in the present embodiment is the low-K dielectric material.
Execution in step S102 measures in the described test structure voltage breakdown between two comb test circuit.
The concrete grammar of measuring described voltage breakdown comprises: apply test voltage between two comb test circuit in each test structure respectively, and measure leakage current between the described comb test circuit, progressively increase test voltage until leakage current suddenly rises, the test voltage when described leakage current suddenly rises is voltage breakdown.
Execution in step S103, according to the type of the test cell of the voltage breakdown between the described comb test circuit and corresponding comb test circuit, the wiring of test different metal interconnection line is to the influence degree of voltage breakdown.
Owing to adopt three kinds of test structures of different test cells to have the wiring of different metal interconnecting wires, and the interval S 1 in described three kinds of test structures, interval S 2, interval S 3 equate, as long as the voltage breakdown between the comb test circuit of contrast correspondence just can be tested the wiring of different metal interconnection line to the influence degree of voltage breakdown.
Wherein, the test structure of the voltage breakdown minimum that records, the wiring of the metal interconnecting wires that it is corresponding is maximum to the influence degree of voltage breakdown; The test structure of the voltage breakdown maximum that records, the wiring of the metal interconnecting wires that it is corresponding is minimum to the influence degree of voltage breakdown.For example, the voltage breakdown of the voltage breakdown of the voltage breakdown of the first test structure 100＞second test structure 200＞the 3rd test structure 300, the wiring of metal interconnecting wires that shows the 3rd test structure 300 correspondences is maximum to the influence degree of voltage breakdown, be that collinear two metal wire tops are maximum to the influence degree of the voltage breakdown of medium between the described top, next is the wiring of the metal interconnecting wires of the second test structure 200 correspondences, namely a metal wire top and another metal wire vertical with described metal wire are less to the influence degree of the voltage breakdown of medium between described two vertical metal interconnection lines, minimum is the wiring of the metal interconnecting wires of the second test structure 200 correspondences, and namely described parallel metal interconnection line is minimum to the influence degree of the voltage breakdown of medium between the parallel metal interconnection line.Only for ease of fully understanding the present invention, the large minispread of the voltage breakdown of actual different test structures is decided according to test result in the large minispread of the voltage breakdown of the different test structures shown in the above-mentioned example.
In other embodiments, the medium for isolation the first comb test circuit and the second comb test circuit is monox.By being that the first test structure 100, the second test structure 200 and the 3rd test structure 300 of monox tested to medium, and be that the first test structure 100, the second test structure 200 and the 3rd test structure 300 of low-K dielectric tested to medium, can obtain different media to the influence degree of voltage breakdown.
In other embodiments, has the same test unit but the voltage breakdown of the test structure that spacing is different between the adjacent test cell can test out the variation of the spacing between the adjacent test cell to the influence degree of the voltage breakdown between the described test cell by measuring several.
Utilize the test structure of the embodiment of the invention, the test structure of the different test cells of described employing has the wiring of different metal interconnecting wires, and the interval S 1 in described three kinds of test structures, interval S 2, interval S 3 equate, by measuring the voltage breakdown between the corresponding comb test circuit, just can test the wiring of different metal interconnection line to the influence degree of voltage breakdown.
Further, by changing the material of the medium between the described metal interconnecting wires, to adopting different medium but the voltage breakdown of the identical test structure of test cell measure, can test out different media to the influence degree of voltage breakdown.
Further, has the same test unit but the voltage breakdown of the test structure that spacing is different between the adjacent test cell can test out the variation of the spacing between the adjacent test cell to the influence degree of the voltage breakdown between the described test cell by measuring several.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection domain of technical solution of the present invention according to technical spirit of the present invention.
Claims (15)
1. test structure, it is characterized in that, comprise: two comb test circuit, the phase embedding that interlocks of the broach metal wire of described two comb test circuit, wherein, at least one side of each broach metal wire is connected with some parallel or perpendicular to the test cell of described broach metal wire, the adjacent test cell of different comb test circuit is arranged relatively.
2. test structure as claimed in claim 1 is characterized in that, the test cell of described two comb test circuit all is the first metal wire that is parallel to described broach metal wire.
3. test structure as claimed in claim 1 is characterized in that, the test cell of one of them comb test circuit is the second metal wire perpendicular to described broach metal wire, and the test cell of another comb test circuit is described broach metal wire.
4. test structure as claimed in claim 1 is characterized in that, the test cell of described two comb test circuit all is the 3rd metal wire perpendicular to described broach metal wire.
5. test structure as claimed in claim 1 is characterized in that, the spacing between the adjacent test cell of different comb test circuit is the minimum value of two spacings between the comb test circuit.
6. test structure as claimed in claim 5, it is characterized in that, except the spacing between the adjacent test cell of different comb test circuit, other spacings between described two comb test circuit are at least 2 times of spacing between the adjacent test cell of described different comb test circuit.
7. test structure as claimed in claim 1 is characterized in that, is formed with medium between the different comb test circuit, and described medium is monox or low-K dielectric material.
8. a method of testing is characterized in that, comprising:
Some different test structures are provided;
Measure in the described test structure voltage breakdown between two comb test circuit;
According to the type of the test cell of the voltage breakdown between the described comb test circuit and corresponding comb test circuit, the wiring of test different metal interconnection line is to the influence degree of voltage breakdown.
9. method of testing as claimed in claim 8, it is characterized in that, described different test structure comprises the first test structure, the second test structure, the 3rd test structure, the test cell of two comb test circuit of described the first test structure all is the first metal wire that is parallel to described broach metal wire, the test cell of one of them comb test circuit of described the second test structure is the second metal wire perpendicular to described broach metal wire, the test cell of another comb test circuit is described broach metal wire, and the test cell of two comb test circuit of described the 3rd test structure all is the first metal wire perpendicular to described broach metal wire.
10. method of testing as claimed in claim 9 is characterized in that, in the described different test structure, the spacing between the adjacent test cell of different comb test circuit equates.
11. method of testing as claimed in claim 9 is characterized in that, in same test structure, the spacing between the adjacent test cell of described different comb test circuit is the minimum value of two spacings between the comb test circuit.
12. method of testing as claimed in claim 11, it is characterized in that, in same test structure, except the spacing between the adjacent test cell of different comb test circuit, other spacings between described two comb test circuit are at least 2 times of spacing between the adjacent test cell of described different comb test circuit.
13. method of testing as claimed in claim 8, it is characterized in that, the method of measuring the voltage breakdown between the described comb test circuit is: apply test voltage between described two comb test circuit, and measure simultaneously leakage current between the described comb test circuit, progressively increase test voltage until leakage current suddenly rises, the test voltage when described leakage current suddenly rises is voltage breakdown.
14. method of testing as claimed in claim 8, it is characterized in that, provide several to have the same test unit but the different test structure of spacing between the adjacent test cell, by measuring the voltage breakdown of described test structure, test out the variation of the spacing between the adjacent test cell to the influence degree of the voltage breakdown between the described test cell.
15. method of testing as claimed in claim 8, it is characterized in that, provide several to have the same test unit but be used for the different test structure of dielectric layer of electricity isolation, measure by the voltage breakdown to described test structure, test out different media to the influence degree of voltage breakdown.
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| CN104617004A (en) * | 2013-11-01 | 2015-05-13 | 北大方正集团有限公司 | Device and method for monitoring intermetallic dielectric layer |
| CN107346751A (en) * | 2016-05-05 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | Test structure and forming method thereof and method of testing |
| CN107346752A (en) * | 2016-05-05 | 2017-11-14 | 中芯国际集成电路制造(上海)有限公司 | Semi-conductor test structure and forming method thereof and method of testing |
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| CN104617004A (en) * | 2013-11-01 | 2015-05-13 | 北大方正集团有限公司 | Device and method for monitoring intermetallic dielectric layer |
| CN103983906A (en) * | 2014-06-11 | 2014-08-13 | 贵州贵航汽车零部件股份有限公司华阳电器公司 | Detection method of insulation property of plastic part with metal insert |
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