CN1635619A - Method for online test of wafer metal interconnection line reliability - Google Patents
Method for online test of wafer metal interconnection line reliability Download PDFInfo
- Publication number
- CN1635619A CN1635619A CN 200310121636 CN200310121636A CN1635619A CN 1635619 A CN1635619 A CN 1635619A CN 200310121636 CN200310121636 CN 200310121636 CN 200310121636 A CN200310121636 A CN 200310121636A CN 1635619 A CN1635619 A CN 1635619A
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- 238000012360 testing method Methods 0.000 title claims abstract description 44
- 239000002184 metal Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 8
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 10
- 238000010998 test method Methods 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 10
- 230000036962 time dependent Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
This invention provides a transistor metal connection wire reliability on line test method, which comprises the following steps: using the transistor cutting channel test circuit and exerting test voltage on any point of the test circuit comb circuit; testing the leakage current between the connection wires of the comb circuit; step by step increasing the test voltage, if the leakage current tested is small and the voltage is basically stable, which means the metal transistor connection wire electric characteristic has good reliability, otherwise, there is some problems existing.
Description
Technical field
The present invention relates to wafer electrical characteristic detection method, particularly wafer metal interconnecting wires reliability on-line testing.
Background technology
Along with dwindling of integrated circuit size, with the increase of silicon wafer area, IC industry is stepped into below the 0.13mm wire spoke technology category, and the circuit complexity of integrated circuit or integrated level increase, and needs the polysilicon layer of multilayer; The live width of metal wire can't be reduced according to MOS element reduce in scale equally on the other hand, so design of single in the past layer of metal layer, can't finish the line work of whole integrated circuit, and must reach the requirement of circuit design with 2 layers, 3 layers or more multi-layered metal interconnecting wires.When above multilayer polysilicon and multiple layer metal interconnect technology (MultievelInterconnects) demand, because polysilicon and metal level all belong to conductor, must be isolated with the good dielectric material of insulating capacity between them, to prevent short circuit, it is all very important to IC process rate, product electrical functionality and reliability.
Wafer is finished wafer factory flow process, needs that (waferacceptance test WAT), includes main line (Circuit) and is positioned between the main line (Circuit) measurement circuit on the Cutting Road etc. on the wafer through final electrical Acceptance Test; Main line (Circuit) part be the circuit of product itself, at last through cutting, packaging and testing are qualified, become the general IC that has been bought on the market.Existing electrical Acceptance Test (the wafer acceptance test that measures wafer, WAT) main on measurement circuit electrical characteristic (Electrical Characteristics), the general element characteristic of testing wafer rotten, engage leakage current (P-Njunction Leakage Current) etc. as lock oxygen dielectric medium breakdown voltage (Breakdown Voltage of Gate Oxide is called for short BVGO), P-N.
The method of the existing electrical characteristic of measuring wafer is referring to Fig. 1, Fig. 2, mainly is to utilize at the measurement circuit 4 on the Cutting Road 3 between main line (Circuit) 2 on the wafer 1.One of them is exactly by the pectination circuit in the measurement circuit 4, applies 1 to three ten-day period of hot season spy's constant voltage at the circuit two ends with probe, measures line l
1With line l
2Between leakage current (Leakage Current), find whether there is short circuit (short) between the line and line in the pectination circuit, detect the quality of the electrical characteristic of wafer metal interconnecting wires with this.
But above-mentioned detection is just to be used for whether having short circuit between online detection line and the line, and reliability that can't online detection insulative dielectric material layer.Because the electrical Acceptance Tests such as (TDDB) of existing time dependent insulative dielectric material layer breakdown voltage can only be in wafer production processes wafer sampling Detection at random, and this kind detection need be carried out several days time usually, the testing process complexity, particularly this detection is that off-line carries out, this is for production in enormous quantities, when confirming that a certain wafer exists as time dependent insulative dielectric material layer breakdown voltage (TDDB) problem, may be processed with its wafer of one batch, influenced the IC process rate.
Summary of the invention
The purpose of this invention is to provide a kind of wafer metal interconnecting wires reliability on-line testing method, can indirect detection wafer metal interconnecting wires such as the reliability of time dependent insulative dielectric material layer breakdown voltage electrical characteristics such as (TDDB); And detect rapidly, accurately, can the accommodate wafer requirement of mass production.
For achieving the above object, the invention provides wafer metal interconnecting wires reliability on-line testing method is, utilize measurement circuit on the wafer cutting path, pectination circuit at the place, arbitrfary point to measurement circuit applies test voltage (Voltage), measure the leakage current (Leakage Current) between the line and line in the pectination circuit simultaneously, and progressively increase test voltage, as the leakage current that records is very little and its value remains unchanged (leakage current that records is in a slightly zone) substantially with the test voltage increase, illustrates as time dependent insulative dielectric material layer breakdown voltage electrical characteristic reliabilities such as (TDDB) good; Otherwise if along with the increase of test voltage, line that records and the leakage current between the line suddenly rise, and the electrical characteristic reliability existing problems of wafer metal interconnecting wires are described.
Beneficial effect of the present invention is, the reliability of time dependent insulative dielectric material layer breakdown voltage electrical characteristics such as (TDDB) that can online indirect detection wafer metal interconnecting wires, and detect fast, accurately, any only needs the several seconds every survey, and special accommodate wafer is produced the requirement to test in enormous quantities.
Description of drawings
Fig. 1 is the wafer surface schematic diagram.
Fig. 2 is the A portion wafer sort circuit enlarged diagram of Fig. 1.
Fig. 3 is the good test result schematic diagram of testing electrical property of the present invention.
Fig. 4 is the bad test result schematic diagram of testing electrical property of the present invention.
Embodiment
As shown in Figure 1 and Figure 2, the invention provides wafer metal interconnecting reliability on-line testing method is, utilize the pectination circuit of measurement circuit 4 on the Cutting Road 3 between the main line on the wafer 1 (Circuit) 2 to apply test voltage (Voltage), measure line l in the pectination circuit
1With line l
2Between leakage current (Leakage Current), and progressively increase test voltage (Voltage), as the leakage current that records is very little and its value remains unchanged (leakage current that records is in a slightly zone) substantially with the test voltage increase, illustrates that this wafer metal interconnecting wires reliability is good.
See also Fig. 3, it is depicted as the testing electrical property result schematic diagram of 5 layers of Cu metal interconnecting wires of a certain wafer, and shown in the figure, the pectination circuit of measurement circuit applies test voltage (Voltage), increases 1v, from 0v to 35v at every turn; Measure the leakage current (LeakageCurrent) between corresponding line and the line simultaneously.Among the figure, to be E-9A and its value approximately remain unchanged (leakage current that records is in a slightly zone) with the increase of test voltage (Voltage) leakage current that the M2-M5 layer records (Leakage Current) substantially, shows that the time dependent insulative dielectric material layer breakdown voltage (TDDB) of these 4 layers of (M2-M5) Cu metal interconnecting wires of this wafer is functional.
See also Fig. 4 again, it is depicted as the testing electrical property result of any 9 points of a certain wafer, and shown in the figure, the pectination circuit of measurement circuit applies test voltage (Voltage), increases 1v, from 0v to 34v at every turn; Measure the leakage current (Leakage Current) between corresponding line and the line simultaneously; The leakage current (Leakage Current) that begins to record from 24v sharply increases along with the increase of test voltage (Voltage), shows time dependent insulative dielectric material layer breakdown voltage (TDDB) the reliability existing problems of this wafer metal interconnecting wires.
In sum, the present invention is in integrated circuit manufacture process, can judge the reliability of the time dependent insulative dielectric material layer breakdown voltage (TDDB) of wafer metal interconnecting wires fast according to the online leakage current that records (Leakage Current) and the comparison of test voltage (Voltage) variation relation, adapted to the requirement of wafer production in enormous quantities, promoted the yield and the reliability of product test.
Claims (2)
1. wafer metal interconnecting wires reliability on-line testing method utilizes that the pectination circuit on the measurement circuit applies test voltage on the wafer cutting path, measures the leakage current between the line and line in the pectination circuit simultaneously, and progressively increases test voltage; If along with the increase of test voltage, line that records and the leakage current between the line suddenly rise, and the electrical characteristic reliability existing problems of wafer metal interconnecting wires are described.
2. wafer metal interconnecting wires reliability on-line testing method as claimed in claim 1 is characterized in that this method is applied to the online detection of wafer metal interconnecting wires reliability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101216363A CN100353515C (en) | 2003-12-31 | 2003-12-31 | Method for online test of wafer metal interconnection line reliability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101216363A CN100353515C (en) | 2003-12-31 | 2003-12-31 | Method for online test of wafer metal interconnection line reliability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1635619A true CN1635619A (en) | 2005-07-06 |
| CN100353515C CN100353515C (en) | 2007-12-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101216363A Expired - Lifetime CN100353515C (en) | 2003-12-31 | 2003-12-31 | Method for online test of wafer metal interconnection line reliability |
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| CN (1) | CN100353515C (en) |
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| CN101577265B (en) * | 2008-05-05 | 2011-08-24 | 中芯国际集成电路制造(北京)有限公司 | Test structure of breakdown voltage, analytic procedure applying same and wafer |
| CN102194796A (en) * | 2010-03-18 | 2011-09-21 | 北大方正集团有限公司 | Wafer detection structure, manufacturing method thereof and wafer detection method |
| CN102385017A (en) * | 2010-08-25 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Short circuit defect detection device and method |
| CN102386167A (en) * | 2010-09-03 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Structure of semiconductor device |
| CN101667550B (en) * | 2008-09-05 | 2012-03-28 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring metal layer on gate structure |
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| CN102967813A (en) * | 2011-08-31 | 2013-03-13 | 中芯国际集成电路制造(上海)有限公司 | Testing structure and testing method |
| CN103811079A (en) * | 2012-11-12 | 2014-05-21 | 三星电子株式会社 | Test method of semiconductor device and semiconductor test apparatus |
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Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960026519A (en) * | 1994-12-31 | 1996-07-22 | 김주용 | Reliability Measurement Method for Dielectrics |
| US6577149B2 (en) * | 2001-01-05 | 2003-06-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and device for addressable failure site test structure |
| JP2003332399A (en) * | 2002-05-13 | 2003-11-21 | Matsushita Electric Ind Co Ltd | Method and system for evaluating insulation film |
-
2003
- 2003-12-31 CN CNB2003101216363A patent/CN100353515C/en not_active Expired - Lifetime
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| CN101577265B (en) * | 2008-05-05 | 2011-08-24 | 中芯国际集成电路制造(北京)有限公司 | Test structure of breakdown voltage, analytic procedure applying same and wafer |
| CN101667550B (en) * | 2008-09-05 | 2012-03-28 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring metal layer on gate structure |
| CN101958263B (en) * | 2009-07-14 | 2013-01-02 | 致茂电子(苏州)有限公司 | Semiconductor grain point measurement machine test method and semiconductor grain point measurement machine |
| CN102194796A (en) * | 2010-03-18 | 2011-09-21 | 北大方正集团有限公司 | Wafer detection structure, manufacturing method thereof and wafer detection method |
| CN102385017A (en) * | 2010-08-25 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Short circuit defect detection device and method |
| CN102386167B (en) * | 2010-09-03 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Structure of semiconductor device |
| CN102386167A (en) * | 2010-09-03 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Structure of semiconductor device |
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| CN104425455A (en) * | 2013-09-09 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Test structure and test method for side ditch problem of shallow trench isolation structure |
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| CN107403788B (en) * | 2016-05-18 | 2020-07-10 | 无锡华润上华科技有限公司 | Structure and method for testing leakage current between metal interconnection lines |
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| US10388578B2 (en) | 2017-10-02 | 2019-08-20 | International Business Machines Corporation | Wafer scale testing and initialization of small die chips |
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| US10679912B2 (en) | 2017-10-02 | 2020-06-09 | International Business Machines Corporation | Wafer scale testing and initialization of small die chips |
| GB2581684A (en) * | 2017-10-02 | 2020-08-26 | Ibm | Wafer scale testing and initialization of small die chips |
| GB2581684B (en) * | 2017-10-02 | 2022-05-11 | Elpis Tech Inc | Wafer scale testing and initialization of small die chips |
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| Publication number | Publication date |
|---|---|
| CN100353515C (en) | 2007-12-05 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111123 |
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Effective date of registration: 20111123 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
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Granted publication date: 20071205 |