CN102965641A - Selenizing method of CIGS (Copper Indium Gallium Selenide) layer of thin film solar cell - Google Patents
Selenizing method of CIGS (Copper Indium Gallium Selenide) layer of thin film solar cell Download PDFInfo
- Publication number
- CN102965641A CN102965641A CN2012105282749A CN201210528274A CN102965641A CN 102965641 A CN102965641 A CN 102965641A CN 2012105282749 A CN2012105282749 A CN 2012105282749A CN 201210528274 A CN201210528274 A CN 201210528274A CN 102965641 A CN102965641 A CN 102965641A
- Authority
- CN
- China
- Prior art keywords
- gas
- flange
- steam
- solar cell
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a selenizing method of a CIGS (Copper Indium Gallium Selenide) layer of a thin film solar cell. The selenizing method comprises the following steps: (1) connecting a Se source evaporating area with a gas output area by a gas ionizer, heating an ionizing chamber of the gas ionizer, feeding Ar which exists between two electrodes, and forming a glow discharge area in the ionizing chamber; (2) heating the solid Se to 200 to 300 DEG C to obtain low-activity Sen (n is not less than 5), and feeding large-radical Se steam into the glow discharge area at 400 to 500 DEG C to crack into small-radical Se steam, and then feeding the small-radical Se steam into a gas output area at 400 to 500 DEG C; and (3) spraying the small-radical Se steam onto the surface of a substrate to take part in the reaction to the CIGS layer on the substrate, so as to form a film. According to the selenizing method of the CIGS layer of the thin film solar cell, the large-radical Se steam is cracked into small-radical Se steam of Sen (n is less than 5) to take part in the preparation of the CIGS absorbing layer, and therefore, the photoelectric conversion efficiency of the CIGS thin film solar cell is remarkably improved.
Description
Technical field
The invention belongs to CIGS absorption layer of thin film solar cell preparation facilities technical field, particularly relate to a kind of selenizing method of thin film solar cell cigs layer.
Background technology
The CIGS thin film solar cell because of its have high conversion efficiency, good, low-cost without photic decline, radiation resistance, be fit to the advantage such as volume to volume technique scale operation, the thin film solar cell that is considered to have most development potentiality.This battery typical structure is by substrate, Mo layer metal back electrode, cigs layer absorption layer, CdS buffer layer, Window layer high resistant i:ZnO, low-resistance ZnO:Al, MgF
2Antireflective coating and Ni-Al gate electrode consist of.Wherein the preparation of CIGS absorption layer is the core technology of CIGS solar cell.
Polynary coevaporation method is to prepare at present in the CIGS absorption layer technique to be used the most extensive and the most successful method.Polynary coevaporation method prepares cigs layer, forms Cu (In with the Se vapor form at the substrate reaction chemical combination with certain temperature by copper, indium, gallium, four kinds of elements of selenium
xGa
1-x) Se
2The multicomponent alloy phase.In preparation process, the selenium heating evaporation method produces selenium steam with the supply reaction needed, and the advantage of this mode is simple, easy row; But along with the consumption of selenium material can cause the selenium source vapour pressure to change, and then have influence on the stability of selenium steam output.And the Se steam selenium of by this way preparation is often with Se
n(n 〉=5) thick atom cluster form exists, the reduction that excessive n value is serious effective contact area of selenium atom in the molecular cluster, directly caused reduction, film composition lack of homogeneity, the local nonstoichiometry of reactive behavior and raw material rate of utilization the phenomenon such as to compare, so that Se atmosphere skewness and have a strong impact on the cigs layer quality of forming film causes the photoelectric transformation efficiency of CIGS thin film solar cell to be difficult to improve.
Summary of the invention
The present invention can be with low activity Se for solving that the technical problem that exists in the background technology provides
n(n 〉=5) thick atom group is cracked into greater activity Se
n(n＜5) little atomic group, the utilization ratio of selenium material is high and the selenium evaporation is even, stable, and the quality of forming film of CIGS absorption layer is good, improves the selenizing method of a kind of thin film solar cell cigs layer of CIGS thin film solar cell photoelectric transformation efficiency.
The technical scheme that the present invention takes is:
The selenizing method of thin film solar cell cigs layer is characterized in: comprise following selenizing process:
With the gas ionization device by air delivering pipeline will with the Se source evaporating area of Se source charging basket be connected after the gas output section of nozzle segment connects, heat in the ionization chamber of gas ionization device to 400 ℃ ~ 500 ℃, pass into Ar gas, Ar generates the charged body of plasma, be present between two electrodes, the ionization chamber forms glow discharge zone;
⑵ be heated to 200-300 ℃ with the solid-state Se in the charging basket of Se source, and solid-state Se generates low activity Se
n(n 〉=5) thick atom Se of group steam enters into 400 ℃ ~ 500 ℃ glow discharge zone; The thick atom Se of group steam cracking in the glow discharge zone becomes Se
nBehind (n＜5) little atomic group Se steam, enter into 400 ℃ ~ 500 ℃ gas output section;
⑶ the flow of adjustments of gas output section medium and small atomic group Se steam to substrate surface, participates in little atomic group Se vapo(u)r blasting in the reaction film forming of cigs layer on the thin film solar cell substrate; After the reaction film forming is finished, close first Se steam, the temperature in the gas ionization device stops to provide of Ar gas after being down to below 150 ℃ again.
The present invention can also adopt following technical measures:
The gas output section medium and small atomic group Se vapo(u)r blasting flow of described ⑶ is by adapter and gas flow-control;
Among the described ⑴ solid-state Se is heated to 190 ℃ and following, passes into again Ar gas;
Described gas ionization device comprises that an end is with the cylindrical stainless steel ionization device housing of flange, ionization device housing is built-in with the thermoplastics as insulation layer, the top of insulation layer is divided into the poroid thermoplastics of step, two electrodes are arranged in the stepped hole, an electrode is the ring electrode that outer wall is wrapped in the insulation layer inwall, another electrode is the columnar electrode that is positioned at the ring electrode center, and the space between two electrodes forms the ionization chamber; The bottom of insulation layer is divided into the thermoplastics of cylinder axis shape, the thermoplastics of cylinder axis shape and stainless steel ionization device housing by ceramic seal be installed with the Se steam input pipe that leads to the ionization chamber, two electrodes are drawn the electrode terminal that is connected with adapter 37 two ends, and the Ar gas input tube that leads to columnar electrode, the Ar gas input tube the other end leads in the Ar air-capacitor device through gas flow controller; The ionization device housing of gas ionization device upper flange one end is put into two ends all with the air delivering pipeline of flange, the Se steam input pipe of the gas ionization device upper flange the other end, Ar gas input tube, electrode terminal one end are put into another two ends all with the air delivering pipeline of flange, after placing copper washer between the flange on flange on the gas ionization device and two air delivering pipelines, be loaded into one by bolt seal;
Described gas ionization device upper/lower terminal is all with flange, ionization device housing is square Stainless Steel Shell, be the thermoplastics of square cavity centered by the insulation layer of ionization device inner walls, respectively be equipped with a planar electrode on corresponding two walls of square cavity, two electrodes are parallel to each other, and square cavity forms the ionization chamber; The flange of lower end leads to the Se steam input pipe, and the flange of upper end leads to the gas output section; Ar gas input tube and electrode terminal pass described thermoplastics by ceramic seal and lead to the ionization chamber; Described thermel protection device is made of from the inside to the outside thermal-protective coating, thermal shield and water-cooled protective layer on the air delivering pipeline; Described thermal-protective coating is asbestos, and thermal shield is nickel dam, and described water-cooled protective layer is the rubber coating of aerial water flowing;
Described Se source charging basket near upper limb bucket be inserted with two on the wall and consist of criss-cross union levers, be wound with two ends on the charging basket outer wall of Se source and be connected to Se source charging basket heater strip on the PLC heating controller, Se source charging basket places the top with the evaporating area body skin of draw-in groove, draw-in groove is installed on the union lever of Se source charging basket, is equipped with described thermel protection device between Se source charging basket and the evaporating area body skin; The draw-in groove of evaporating area body skin upper end is installed on the union lever; There is edge and barrel lid on the ferrite stainless steel material barrel of high chromium content on the evaporating area body skin top that Se source charging basket is housed; Be shaped with on the barrel along the edge of a knife along the upper surface on the barrel of circle shape, the center of barrel lid is shaped with the Se steam outlet, Se steam outlet side burr has feeding port, the lower surface of barrel lid is shaped with the barrel lid edge of a knife, be bited into one along the edge of a knife and the barrel lid edge of a knife through the copper washer sealing on the barrel, on the barrel along with after charging basket lid is connected by the confinement bolt, along linking into an integrated entity by argon arc welding with Se source charging basket, be loaded into one through screw and the sealing of evaporating area body skin on the barrel; With flange one end of the filling tube of flange up, the filling tube the other end and feeding port seal inferior arc welding and are integral; On the end face of flange of filling tube sealing cover is arranged.
Described gas output section comprises the ferritic stainless steel gas output lumen with the high chromium content of flange, the lumen fixed orifices is arranged on the flange, gas output lumen outer wall cover upper connecting base, Connection Block and lumen fixed orifices are loaded into one with the flange that is placed with ionization device housing air delivering pipeline by bolt seal; Gas output lumen outer wall puts the ferritic stainless steel heating muff of high chromium content, is shaped with spiral helicine wire casing on the described lumen heating muff, is wound with the sleeve heater strip on the wire casing, also is wound with a circle thermocouple wire on the lumen heating muff; The outer surface cover of lumen heating muff that is wound with heater strip and thermocouple wire has the bottom with the ferritic stainless steel heating muff protective tube of the high chromium content of cabling mouth, and draw from the cabling mouth end of described sleeve heater strip and thermocouple wire; The upper end inner wall sealing argon arc welding of gas output lumen is connected to the connection rectiblock, the center is the carbon nozzle rectifying device of nozzle, and described carbon nozzle rectifying device and rectiblock consist of nozzle segment.
Advantage and positively effect that the present invention has are:
1, the present invention generates the charged body of plasma owing to adopted the gas ionization device with Ar gas, and stable existence forms glow discharge zone between two electrodes; After Se steam enters into the glow discharge interval, by low activity Sen(n 〉=5) thick atom group is cracked into greater activity Sen(n＜5) little atomic group, the photoelectric transformation efficiency of optimizing CIGS absorption layer preparation technology, improving the CIGS thin film solar cell has been played significant effect.
2, the present invention has adopted adapter and gas flow controller, has effectively controlled ionization effect and the flow of Se steam, has improved the homogeneity of Se steam.
3, the thermel protection device that has all adopted thermal-protective coating, thermal shield and water-cooled protective layer to consist of on the air delivering pipeline of the present invention has guaranteed that the gas temperature of process air delivering pipeline is constant, has effectively prevented from stopping up air delivering pipeline because of the Se vapor condenses; The harm that Se steam causes and the scald that prevents personnel have been prevented when revealing.
4, the present invention is connected to thermocouple and Se source charging basket heater strip on the PLC heating controller, has effectively controlled the Heating temperature of solid-state Se and Se steam; The stability of Se temperature has a great impact the crystallization effect tool of CIGS absorption layer in the making processes of CIGS hull cell; The PLC heating controller has obtained stable good steady temperature by automatically adjusting the temperature in Se source, Effective Raise the CIGS quality of forming film.
Description of drawings
Fig. 1 is the selenizing method synoptic diagram of a kind of thin film solar cell cigs layer of the present invention;
Fig. 1 (1) is the enlarged view of thermel protection device among Fig. 1;
Fig. 2 is the structural representation of gas output section among Fig. 1;
Fig. 3 is the elevational schematic view among Fig. 2;
Fig. 4 is the structural representation of internal duct heating muff among Fig. 2;
Fig. 5 is the schematic top plan view of Fig. 4;
Fig. 6 is the structure iron of the heating muff protective tube among Fig. 2;
Fig. 7 is the elevational schematic view of Fig. 6;
The structural representation of Se source evaporating area among Fig. 8 Fig. 1;
Fig. 9 is the schematic top plan view of Se source charging basket among Fig. 8;
Figure 10 is that barrel interface master looks cross-sectional schematic among Fig. 8;
Figure 11 is the schematic top plan view of barrel interface among Fig. 8;
Figure 12 is the main cross-sectional schematic of looking of barrel lid among Fig. 8;
Figure 13 is the schematic top plan view of barrel lid among Fig. 8;
Figure 14 is the barrel shielding front view among Fig. 8;
Figure 15 is the schematic top plan view among Figure 14;
Figure 16 is that the master of filling tube looks cross-sectional schematic among Fig. 8;
Figure 17 is the schematic top plan view of filling tube among Fig. 8;
Figure 18 is nozzle segment enlarged view in 1;
Figure 19 is that gas ionization device master looks partial schematic sectional view among Fig. 1;
Figure 20 is the gas ionization device structural representation of a kind of parallel electrode plate of 1.
Wherein, 1-gas output section, 2-Connection Block; the 3-thermel protection device, 4-gas ionization device, 5-Se steam input pipe; the 6-air delivering pipeline, 7-Ar gas input tube, 8-thermal-protective coating; the 9-thermal shield, 10-water-cooled protective layer, 11-electrode; 12-ionization device housing, 13-insulation layer, 14-Se source evaporating area; the 15-thermocouple, 16-gas output lumen, 17-lumen fixed orifices; 18-lumen heating muff, 19-sleeve heater strip, 20-thermocouple wire; the 21-wire casing, 22-heating muff protective tube, 23-cabling mouth; 24-Se source charging basket, 25-union lever, 26-Se source charging basket heater strip; edge on the 27-barrel, on the 28-barrel along the edge of a knife, the 29-feeding port; the 30-Se steam outlet; 31-barrel lid, the 32-barrel lid edge of a knife, 33-draw-in groove; 34-evaporating area body skin; the 35-filling tube, the 36-filling tube flange edge of a knife, 37-adapter; the 38-gas flow controller; the 39-nozzle; the 40-PLC heating controller; the solid-state Se of 41-; 42-carbon nozzle rectifying device; the 43-rectiblock; the 44-electrode terminal; the 45-nozzle segment.
Embodiment
For further understanding summary of the invention of the present invention, Characteristic, hereby exemplify following examples, be described in detail as follows:
A kind of preparation process of selenizing device in the selenizing method of thin film solar cell cigs layer of the present invention:
With reference to Fig. 1 and Figure 19, the selenizing method of thin film solar cell cigs layer, comprise Se source evaporating area 14 and gas output section 1, the ferritic stainless steel air delivering pipeline 6 through high chromium content between Se source evaporating area and the gas output section connects the passage that gas ionization device 4 consists of Se source evaporating area and gas output section; Described gas ionization device comprises that an end is with the cylindrical stainless steel ionization device housing 12 of flange, ionization device housing is built-in with the thermoplastics as insulation layer 13, the top of insulation layer is divided into the poroid thermoplastics of step, two electrodes 11 are arranged in the stepped hole, an electrode is the ring electrode that outer wall is wrapped in the insulation layer inwall, another electrode is the columnar electrode that is positioned at the ring electrode center, and the space between two electrodes forms the ionization chamber; The bottom of insulation layer is divided into the thermoplastics of cylinder axis shape, the thermoplastics of cylinder axis shape and stainless steel ionization device housing by ceramic seal be installed with the Se steam input pipe 5 that leads to the ionization chamber, two electrodes are drawn the electrode terminal 44 that is connected with adapter 37 two ends, and the Ar gas input tube 7 that leads to columnar electrode, the Ar gas input tube the other end leads in the Ar air-capacitor device through gas flow controller 38; The ionization device housing of gas ionization device upper flange one end is put into two ends all with the air delivering pipeline of flange, the Se steam input pipe of the gas ionization device upper flange the other end, Ar gas input tube, electrode terminal one end are put into another two ends all with the air delivering pipeline of flange, after placing copper washer between the flange on flange on the gas ionization device and two air delivering pipelines, be loaded into one by bolt seal; The air delivering pipeline that is exposed at the surface all is surrounded by the thermel protection device 3 that is made of thermal-protective coating 8, thermal shield 9 and water-cooled protective layer 10 from the inside to the outside; see Fig. 1 (1); described thermal-protective coating is asbestos, and thermal shield is nickel dam, and described water-cooled protective layer is the rubber coating of aerial water flowing.
With reference to Fig. 8-18, Se source evaporating area comprises that inside is equipped with the ferritic stainless steel Se source charging basket 24 of the high chromium content of solid-state Se41, consist of criss-cross union lever 25 near being inserted with two on the Se source charging basket wall of upper limb, be wound with two ends on the charging basket outer wall of Se source and be connected to Se source charging basket heater strip 26 on the PLC heating controller 40, Se source charging basket places the top with the evaporating area body skin 34 of draw-in groove 33, draw-in groove is installed on the union lever of Se source charging basket, be equipped with thermel protection device between Se source charging basket and the evaporating area body skin, see Fig. 1 (1), the draw-in groove of evaporating area body skin upper end is installed on the union lever, and charging basket bottom in Se source is equipped with the thermocouple 15 that is connected on the PLC heating controller; The evaporating area body skin top that Se source charging basket is housed has on the ferrite stainless steel material barrel of high chromium content along 27 and barrel lid 31; Be shaped with on the barrel along the edge of a knife 28 along the upper surface on the barrel of circle shape, the center of barrel lid is shaped with Se steam outlet 30, Se steam outlet side burr has feeding port 29, the lower surface of barrel lid is shaped with the barrel lid edge of a knife 32, be bited into one along the edge of a knife and the barrel lid edge of a knife through the copper washer sealing on the barrel, on the barrel along with after charging basket lid is connected by the confinement bolt, along linking into an integrated entity by argon arc welding with Se source charging basket, be loaded into one through screw and the sealing of evaporating area body skin on the barrel; Se steam outlet and air delivering pipeline one end sealing argon arc welding are integral, end face is arranged with the flange of the edge of a knife on the other end of air delivering pipeline, this flange is loaded into one by the flange of copper washer and the air delivering pipeline of the Se steam input pipe, the Ar gas input tube that are placed with the gas ionization device, electrode terminal by the bolt bolt seal; With flange one end of the filling tube 35 of flange up, the filling tube the other end and feeding port seal inferior arc welding and are integral; Be shaped with the filling tube flange edge of a knife 36 with the sealing cover interlock on the end face of flange of filling tube, on the end face of flange of filling tube sealing cover arranged; The air delivering pipeline that is exposed at the surface all is surrounded by thermel protection device 3 from the inside to the outside, sees Fig. 1 (1).
With reference to Fig. 2-7 and Figure 18, the gas output section comprises the ferritic stainless steel gas output lumen 16 with the high chromium content of flange, lumen fixed orifices 17 is arranged on the flange, gas output lumen outer wall cover upper connecting base 2, Connection Block and lumen fixed orifices are loaded into one with the flange that is placed with ionization device housing air delivering pipeline by bolt seal; Gas output lumen outer wall puts the ferritic stainless steel heating muff 18 of high chromium content, is shaped with spiral helicine wire casing 21 on the described lumen heating muff, is wound with sleeve heater strip 19 on the wire casing, also is wound with a circle thermocouple wire 20 on the lumen heating muff; The outer surface cover of lumen heating muff that is wound with heater strip and thermocouple wire has the bottom with the ferritic stainless steel heating muff protective tube 22 of the high chromium content of cabling mouth 23, and draw from the cabling mouth end of described sleeve heater strip and thermocouple wire; The upper end inner wall sealing argon arc welding of gas output lumen is connected to connection rectiblock 43, the center is the carbon nozzle rectifying device 42 of nozzle, and described carbon nozzle rectifying device and rectiblock consist of nozzle segment 45 as shown in figure 18; Finish the preparation of the selenizing method of thin film solar cell cigs layer of the present invention.
Adopt said apparatus to carry out the selenizing method of thin film solar cell cigs layer, comprise following selenizing process:
⑴ heat to 400 ℃ ~ 500 ℃ in the ionization chamber of gas ionization device, pass into Ar gas, Ar gas generates the charged body of plasma in the ionization chamber, and stable existence is between two electrodes, and the ionization chamber forms glow discharge zone;
⑵ measure Se source charging basket bottom temp with the energising of Se source charging basket heater strip by the thermocouple that is connected to the PLC heating controller, and PLC heating controller control temperature is heated to 200-300 ℃ with the solid-state Se in the charging basket of Se source, and solid-state Se generates low activity Se
n(n 〉=5) thick atom Se of group steam, the Se of thick atom group steam is by the air delivering pipeline with heating, thermoshield and the protection of outside water-cooled, keeping the temperature of the thick atom Se of group steam is 200-300 ℃, and the thick atom Se of group steam enters into 400 ℃ ~ 500 ℃ glow discharge zone; SA Se in the glow discharge zone
nThe beginning cracking of (n 〉=5) thick atom group forms highly active Se
n(n＜5) little atomic group; little atomic group Se steam is by the air delivering pipeline with heated protective, thermoshield and the cold and hot protector of external water; the temperature that keeps little atomic group Se steam is 400 ℃ ~ 500 ℃, and it is 400-500 ℃ gas output section that little atomic group Se steam enters into temperature
⑶ regulate the flow of little atomic group Se steam by adapter and gas flow controller, with little atomic group Se steam by nozzle ejection to substrate surface, participate in the reaction film forming of cigs layer on the thin film solar cell substrate; After the reaction film forming is finished, close first Se steam, the temperature in the gas ionization device stops to provide of Ar gas after being down to below 150 ℃ again, pours in down a chimney into Ar gas input tube to prevent Se steam, causes Ar gas input tube to stop up.
Because the fusing point of Se is 217 ℃, the Se temperature reaches and namely has relatively large gas after 230 ℃ and steam; Before being preferably in solid-state Se and being heated to 190 ℃, again Ar gas is passed in the ionization chamber of 400 ℃ ~ 500 ℃ of gas ionization devices, make the ionization chamber form glow discharge zone, both avoided Ar gas to pass into the waste that causes too early Ar gas unnecessary, prevented again that Ar gas from passing into the line clogging that causes the Se gas of high diffusive to be introduced into the ionization chamber evening and cause Ar letter shoot road to bring because condensing.
Gas ionization device among the present invention can also adopt following assembling mode:
Ar gas is ejected to the ionization district by the planar electrode edge, and the ionization district forms glow discharge zone, and after entering glow discharge zone after Se steam is carried via air delivering pipeline and activating, stable existence is in glow discharge zone; The Seization process of the reaction film forming of cigs layer on the flexible substrate such as the Se steam after being activated enters the gas output section and participates in film formation reaction, has both simplified device, satisfies again small area glass rigid substrate, and PI, stainless steel and titanium are thin.
Although the above is described the preferred embodiments of the present invention by reference to the accompanying drawings; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment only is schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not breaking away from the scope situation that aim of the present invention and claim protect, can also make a lot of forms.These all belong within protection scope of the present invention.
Claims (7)
1. the selenizing method of thin film solar cell cigs layer is characterized in that: comprise following selenizing process:
With the gas ionization device by air delivering pipeline will with the Se source evaporating area of Se source charging basket be connected after the gas output section of nozzle segment connects, heat in the ionization chamber of gas ionization device to 400 ℃ ~ 500 ℃, pass into Ar gas, Ar generates the charged body of plasma, be present between two electrodes, the ionization chamber forms glow discharge zone;
⑵ be heated to 200-300 ℃ with the solid-state Se in the charging basket of Se source, and solid-state Se generates low activity Se
n(n 〉=5) thick atom Se of group steam enters into 400 ℃ ~ 500 ℃ glow discharge zone; The thick atom Se of group steam cracking in the glow discharge zone becomes Se
nBehind (n＜5) little atomic group Se steam, enter into 400 ℃ ~ 500 ℃ gas output section;
⑶ the flow of adjustments of gas output section medium and small atomic group Se steam to substrate surface, participates in little atomic group Se vapo(u)r blasting in the reaction film forming of cigs layer on the thin film solar cell substrate; After the reaction film forming is finished, close first Se steam, the temperature in the gas ionization device stops to provide of Ar gas after being down to below 150 ℃ again.
2. the selenizing method of thin film solar cell cigs layer according to claim 1, it is characterized in that: described ⑶ gas output section medium and small atomic group Se vapo(u)r blasting flow is by adapter and gas flow-control.
3. the selenizing method of thin film solar cell cigs layer according to claim 1 is characterized in that: among the described ⑴ solid-state Se is heated to 190 ℃ and following, passes into Ar gas again.
4. the selenizing method of thin film solar cell cigs layer according to claim 1, it is characterized in that: described gas ionization device comprises that an end is with the cylindrical stainless steel ionization device housing of flange, ionization device housing is built-in with the thermoplastics as insulation layer, the top of insulation layer is divided into the poroid thermoplastics of step, two electrodes are arranged in the stepped hole, an electrode is the ring electrode that outer wall is wrapped in the insulation layer inwall, another electrode is the columnar electrode that is positioned at the ring electrode center, and the space between two electrodes forms the ionization chamber; The bottom of insulation layer is divided into the thermoplastics of cylinder axis shape, the thermoplastics of cylinder axis shape and stainless steel ionization device housing by ceramic seal be installed with the Se steam input pipe that leads to the ionization chamber, two electrodes are drawn the electrode terminal that is connected with adapter 37 two ends, and the Ar gas input tube that leads to columnar electrode, the Ar gas input tube the other end leads in the Ar air-capacitor device through gas flow controller; The ionization device housing of gas ionization device upper flange one end is put into two ends all with the air delivering pipeline of flange, the Se steam input pipe of the gas ionization device upper flange the other end, Ar gas input tube, electrode terminal one end are put into another two ends all with the air delivering pipeline of flange, after placing copper washer between the flange on flange on the gas ionization device and two air delivering pipelines, be loaded into one by bolt seal.
5. the selenizing method of thin film solar cell cigs layer according to claim 1, it is characterized in that: described gas ionization device upper/lower terminal is all with flange, ionization device housing is square Stainless Steel Shell, be the thermoplastics of square cavity centered by the insulation layer of ionization device inner walls, respectively be equipped with a planar electrode on corresponding two walls of square cavity, two electrodes are parallel to each other, and square cavity forms the ionization chamber; The flange of lower end leads to the Se steam input pipe, and the flange of upper end leads to the gas output section; Ar gas input tube and electrode terminal pass described thermoplastics by ceramic seal and lead to the ionization chamber; Described thermel protection device is made of from the inside to the outside thermal-protective coating, thermal shield and water-cooled protective layer on the air delivering pipeline; Described thermal-protective coating is asbestos, and thermal shield is nickel dam, and described water-cooled protective layer is the rubber coating of aerial water flowing.
6. the selenizing method of thin film solar cell cigs layer according to claim 1, it is characterized in that: described Se source charging basket near upper limb bucket be inserted with two on the wall and consist of criss-cross union levers, be wound with two ends on the charging basket outer wall of Se source and be connected to Se source charging basket heater strip on the PLC heating controller, Se source charging basket places the top with the evaporating area body skin of draw-in groove, draw-in groove is installed on the union lever of Se source charging basket, is equipped with described thermel protection device between Se source charging basket and the evaporating area body skin; The draw-in groove of evaporating area body skin upper end is installed on the union lever; There is edge and barrel lid on the ferrite stainless steel material barrel of high chromium content on the evaporating area body skin top that Se source charging basket is housed; Be shaped with on the barrel along the edge of a knife along the upper surface on the barrel of circle shape, the center of barrel lid is shaped with the Se steam outlet, Se steam outlet side burr has feeding port, the lower surface of barrel lid is shaped with the barrel lid edge of a knife, be bited into one along the edge of a knife and the barrel lid edge of a knife through the copper washer sealing on the barrel, on the barrel along with after charging basket lid is connected by the confinement bolt, along linking into an integrated entity by argon arc welding with Se source charging basket, be loaded into one through screw and the sealing of evaporating area body skin on the barrel; With flange one end of the filling tube of flange up, the filling tube the other end and feeding port seal inferior arc welding and are integral; On the end face of flange of filling tube sealing cover is arranged.
7. the selenizing method of thin film solar cell cigs layer according to claim 1, it is characterized in that: described gas output section comprises the ferritic stainless steel gas output lumen with the high chromium content of flange, the lumen fixed orifices is arranged on the flange, gas output lumen outer wall cover upper connecting base, Connection Block and lumen fixed orifices are loaded into one with the flange that is placed with ionization device housing air delivering pipeline by bolt seal; Gas output lumen outer wall puts the ferritic stainless steel heating muff of high chromium content, is shaped with spiral helicine wire casing on the described lumen heating muff, is wound with the sleeve heater strip on the wire casing, also is wound with a circle thermocouple wire on the lumen heating muff; The outer surface cover of lumen heating muff that is wound with heater strip and thermocouple wire has the bottom with the ferritic stainless steel heating muff protective tube of the high chromium content of cabling mouth, and draw from the cabling mouth end of described sleeve heater strip and thermocouple wire; The upper end inner wall sealing argon arc welding of gas output lumen is connected to the connection rectiblock, the center is the carbon nozzle rectifying device of nozzle, and described carbon nozzle rectifying device and rectiblock consist of nozzle segment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105282749A CN102965641A (en) | 2012-12-05 | 2012-12-05 | Selenizing method of CIGS (Copper Indium Gallium Selenide) layer of thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105282749A CN102965641A (en) | 2012-12-05 | 2012-12-05 | Selenizing method of CIGS (Copper Indium Gallium Selenide) layer of thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102965641A true CN102965641A (en) | 2013-03-13 |
Family
ID=47796073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105282749A Pending CN102965641A (en) | 2012-12-05 | 2012-12-05 | Selenizing method of CIGS (Copper Indium Gallium Selenide) layer of thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102965641A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104975266A (en) * | 2015-07-17 | 2015-10-14 | 惠州建邦精密塑胶有限公司 | Furnace and method for magnetron sputtering ion plating of two layers of films |
| CN104993020A (en) * | 2015-07-23 | 2015-10-21 | 南京汉能薄膜太阳能有限公司 | Selenylation reaction device capable of improving quality of selenylation and method for conducting selenylation reaction |
| CN105206707A (en) * | 2015-08-26 | 2015-12-30 | 厦门神科太阳能有限公司 | Preparation method for CIGS solar cell light absorption layer thin-film |
| CN106032895A (en) * | 2015-03-10 | 2016-10-19 | 深圳首创新能源股份有限公司 | A preparation device and a preparation method for selenium steam |
| CN113284966A (en) * | 2021-05-18 | 2021-08-20 | 南开大学 | Selenium source evaporation activation treatment equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312197A (en) * | 2010-07-08 | 2012-01-11 | 冠晶光电股份有限公司 | Copper, indium, gallium and selenide (CIGS) solar battery processing equipment and method |
| CN202380080U (en) * | 2011-12-21 | 2012-08-15 | 中国电子科技集团公司第十八研究所 | Device for spraying and pyrolyzing selenium source on surface of small-area substrate |
| CN202499904U (en) * | 2012-03-29 | 2012-10-24 | 尚越光电科技有限公司 | Plasma-assisted selenizing device for preparing copper-indium-gallium-selenium (CIGS) thin films |
| CN102787298A (en) * | 2011-05-18 | 2012-11-21 | 瑞必尔 | Injector for a vacuum vapour deposition system |
-
2012
- 2012-12-05 CN CN2012105282749A patent/CN102965641A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312197A (en) * | 2010-07-08 | 2012-01-11 | 冠晶光电股份有限公司 | Copper, indium, gallium and selenide (CIGS) solar battery processing equipment and method |
| CN102787298A (en) * | 2011-05-18 | 2012-11-21 | 瑞必尔 | Injector for a vacuum vapour deposition system |
| CN202380080U (en) * | 2011-12-21 | 2012-08-15 | 中国电子科技集团公司第十八研究所 | Device for spraying and pyrolyzing selenium source on surface of small-area substrate |
| CN202499904U (en) * | 2012-03-29 | 2012-10-24 | 尚越光电科技有限公司 | Plasma-assisted selenizing device for preparing copper-indium-gallium-selenium (CIGS) thin films |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106032895A (en) * | 2015-03-10 | 2016-10-19 | 深圳首创新能源股份有限公司 | A preparation device and a preparation method for selenium steam |
| CN106032895B (en) * | 2015-03-10 | 2018-05-01 | 深圳首创新能源股份有限公司 | A kind of preparation facilities and preparation method of selenium steam |
| CN104975266A (en) * | 2015-07-17 | 2015-10-14 | 惠州建邦精密塑胶有限公司 | Furnace and method for magnetron sputtering ion plating of two layers of films |
| CN104993020A (en) * | 2015-07-23 | 2015-10-21 | 南京汉能薄膜太阳能有限公司 | Selenylation reaction device capable of improving quality of selenylation and method for conducting selenylation reaction |
| CN104993020B (en) * | 2015-07-23 | 2017-01-04 | 南京汉能薄膜太阳能有限公司 | The selenylation reaction device that can improve selenizing quality and the method carrying out selenylation reaction |
| CN105206707A (en) * | 2015-08-26 | 2015-12-30 | 厦门神科太阳能有限公司 | Preparation method for CIGS solar cell light absorption layer thin-film |
| CN105206707B (en) * | 2015-08-26 | 2017-03-29 | 厦门神科太阳能有限公司 | A kind of preparation method of copper indium gallium selenium solar cell light absorbing zone thin film |
| CN113284966A (en) * | 2021-05-18 | 2021-08-20 | 南开大学 | Selenium source evaporation activation treatment equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102965641A (en) | Selenizing method of CIGS (Copper Indium Gallium Selenide) layer of thin film solar cell | |
| CN102943242A (en) | Radio-frequency ionization selenium source device | |
| CN206310919U (en) | A kind of ceramic metallization atmosphere sintering furnace | |
| CN103666583A (en) | Waste heat boiler device of entrained bed gasifier | |
| CN102433550A (en) | Method for spraying cracked selenium source on surface of substrate | |
| CN101613789A (en) | Prevent the Apparatus for () and method therefor of copper cash oxidation in the Production of Enamel Wires | |
| CN204187592U (en) | A kind of pan shell type waste heat boiler of built in bypass control valve | |
| CN205893301U (en) | Blast furnace top device of fetching water | |
| CN208517343U (en) | Retort cooling tower | |
| CN110793039A (en) | Waste incineration exhaust-heat boiler flue gas reflux system | |
| CN207062355U (en) | A kind of natural heat dissipation device for magnesium method titanium sponge production | |
| CN102231291A (en) | Preparation apparatus and preparation method of coating layer | |
| CN206204356U (en) | A kind of galvanized steel plain sheet environmental protection and energy saving annealing furnace | |
| CN202373561U (en) | Device for large-area roll-to-roll flexible substrate surface spraying and cracking selenium source | |
| CN204534509U (en) | Coke oven flue waste gas recovery heat exchange of heat pipe | |
| CN202380080U (en) | Device for spraying and pyrolyzing selenium source on surface of small-area substrate | |
| CN103361592B (en) | A kind of method improving high-temperature corrosion resistance of zirconium alloy pipe | |
| CN103335310B (en) | Immersed combustor | |
| CN205322117U (en) | Energy -conserving heating water tank of marching type water dispenser | |
| CN111770624A (en) | Radio frequency plasma torch with discharge protection device for manufacturing nano powder | |
| CN204346206U (en) | Water energy-saving environmental protection device | |
| CN101608301A (en) | Production line of continuous vacuum plasma evaporation metal composite material | |
| CN205008163U (en) | Hot shielding structure of ultrasonic spray pyrolysis spraying reacting chamber | |
| CN202945318U (en) | Selenium source ionization device for large-area substrate | |
| CN204853415U (en) | Heat exchanging device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130313 |
|
| WD01 | Invention patent application deemed withdrawn after publication |