CN202373561U - Device for large-area roll-to-roll flexible substrate surface spraying and cracking selenium source - Google Patents
Device for large-area roll-to-roll flexible substrate surface spraying and cracking selenium source Download PDFInfo
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- CN202373561U CN202373561U CN2011205390617U CN201120539061U CN202373561U CN 202373561 U CN202373561 U CN 202373561U CN 2011205390617 U CN2011205390617 U CN 2011205390617U CN 201120539061 U CN201120539061 U CN 201120539061U CN 202373561 U CN202373561 U CN 202373561U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model relates to a device for a large-area roll-to-roll flexible substrate surface spraying and cracking selenium source. The device comprises a selenium source evaporation chamber and a substrate inside a vacuum cavity, and is characterized in that a vapor outlet of the selenium source evaporation chamber is connected with a high-temperature pyrolyzing chamber through a pipeline; and two or more than two layers of porous grid plates overspread with pore diameters smaller than 0.5 mm are fixedly mounted on the inner wall of the cavity of the high-temperature pyrolyzing chamber. According to the utility model, selenium vapour penetrates the two layers of the porous grid plate under high temperature, Sen (n is more than or equal to 5) large radicle is pyrolyzed to be Sen (n(5)) small radicle, the quantity of the high activity Se2 is increased, the reactivity of selenium element is enhanced, the film forming quality of CIGS (copper indium gallium selenide) thin-film solar cell can be improved effectively, and an active effect is played to the photoelectric conversion efficiency of the copper-indium-gallium-selenium thin-film solar cell; selenium vapor is directly sprayed onto the surface of the substrate through spraying orifices, the selenium material is enabled to fully participate in the reaction forming process of the CIGS layer. Therefore, the utilization ratio of the selenium material is improved.
Description
Technical field
The utility model belongs to the CIGS thin-film solar cell technical field, especially relates to a kind of large tracts of land volume to volume flexible substrate jet surface cracking selenium source and uses device.
Background technology
CIGS thin-film solar cell is that one of thin film solar cell of development potentiality is arranged at present most; Have high conversion efficiency, do not have photic decline, radiation resistance is good, low-cost, be fit to advantages such as volume to volume technology large-scale production, its typical structure is: metal back electrode Mo layer, absorbed layer cigs layer, resilient coating CdS, Window layer high resistant i:ZnO, low-resistance ZnO:Al, MgF
2Antireflective coating and Ni-Al gate electrode, wherein the preparation of absorbed layer cigs layer is the core technology of CIGS thin-film solar cell.
Polynary coevaporation method be the preparation cigs layer the most extensively with successful method.Polynary coevaporation method prepares cigs layer, is that reaction chemical combination forms Cu (In at the substrate place with gaseous form by copper, indium, gallium, each element of selenium
xGa
1-x) Se
2Polycrystalline material, wherein the selenium element is very crucial in the forming process of cigs layer.Prepare in the process at cigs layer, solid-state selenium material is placed in the evaporation boat, produces selenium steam through heating evaporation method, and in vacuum chamber, the advantage of this mode is nontoxic, cheap with the gaseous form disperse.But selenium steam is pressed and is difficult to control, and gaseous state selenium is often with Se
n(n>=5) thick atom group form exists; Reactivity is relatively poor, is prone to cause selenium element combination reaction insufficient, causes the loss of indium and gallium element; Cause the CIGS film composition to depart from desirable stoichiometric proportion when reducing stock utilization, reduce the cigs layer quality of forming film.
Summary of the invention
The utility model is cracked into highly active little atomic group for the technical problem that exists in the solution known technology provides a kind of with thick atom group in the selenium steam; Improve selenium element reaction activity and utilance, effectively improve the large tracts of land volume to volume flexible substrate jet surface cracking selenium source of cigs layer quality of forming film and use device.
The technical scheme that the utility model is taked for the technical problem that exists in the solution known technology is:
A kind of large tracts of land volume to volume flexible substrate jet surface cracking selenium source is used device; Comprise the volume to volume substrate that is used to spray selenium source in the selenium source vaporization chamber that has the temperature control heater and be built-in with solid-state selenium and the vacuum chamber, be characterized in: the vapor outlet port of said selenium source vaporization chamber is connected with the Pintsch process chamber through pipeline; Said Pintsch process chamber is the metallic cavity that has import and outlet, and said import is called the cracking room import, said outlet is called the outlet of cracking selenium source; More than being fixed with two-layer reaching on the cavity inner wall between cracking room import and the outlet of cracking selenium source, evenly be covered with the multi hole grid of aperture less than 0.5mm.
The utility model can also adopt following technical scheme:
Be connected with outlet pipe in the said cracking selenium source outlet, said outlet pipe is the wreath that stainless steel tube surrounds, and a hole as air inlet is arranged on the periphery of outlet pipe; Be covered with the aperture as spray orifice on one facial canal of outlet pipe, spray orifice is aimed at substrate;
Said Pintsch process chamber is that the outside is surrounded by the ceramic wool heat-insulation layer, installs the groove of multi hole grid on the inwall in addition.
Said multi hole grid is a boron nitride material.
Have oral area not limit the spray orifice of quantity perpendicular to substrate surface on the said outlet pipe, said cracking selenium source is ejected into substrate surface from the spray orifice on the outlet pipe.
Said Pintsch process chamber and outlet pipe are positioned at the vacuum chamber.
Said selenium source vaporization chamber periphery all is surrounded by the ceramic wool heat-insulation layer.
Advantage and the good effect that the utlity model has are:
1, the utility model adopts selenium steam high temperature is passed two-layer multi hole grid, by Se
n(n>=5) thick atom group is cracked into Se
n(n<5) little atomic group has increased high activity Se
2Quantity, improved the reactivity of selenium element, effectively improved the quality of forming film of CIGS thin-film solar cell cigs layer, the photoelectric conversion efficiency that improves CIGS thin-film solar cell is played positive role.
2, the utility model is directly injected to substrate surface to the selenium steam of little atomic group through spray orifice, makes the selenium material fully participate in the membrane process that is reacted into of cigs layer, thereby improves the selenium stock utilization.
Description of drawings
Fig. 1 is that the utility model prepares the large tracts of land selenium source and uses the apparatus structure cross-sectional schematic;
Fig. 2 is a selenium source Pintsch process chamber interior sketch map among Fig. 1;
Wherein, 1-heat-insulation layer, 2-temperature control heater, 3-vapor outlet port, 4-selenium source vaporization chamber, the solid-state selenium of 5-; The 6-pipeline, the import of 7-cracking room, 8-Pintsch process chamber, the outlet of 9-cracking selenium source, 10-air inlet; The 11-outlet pipe, 12-substrate, 13-spray orifice, 14-vacuum chamber, 15-multi hole grid.
Embodiment
For further understanding summary of the invention, characteristics and the effect of the utility model, the following examples of giving an example now, and conjunction with figs. 1-2 specifies as follows:
A kind of large tracts of land volume to volume flexible substrate jet surface cracking selenium source is used device, comprises the volume to volume substrate that is used to spray selenium source in the selenium source vaporization chamber that has the temperature control heater and be built-in with solid-state selenium and the vacuum chamber.
The innovative point of the utility model is: the vapor outlet port of said selenium source vaporization chamber is connected with the Pintsch process chamber through pipeline; Said Pintsch process chamber is the metallic cavity that has import and outlet, and said import is called the cracking room import, said outlet is called the outlet of cracking selenium source; More than being fixed with two-layer reaching on the cavity inner wall between cracking room import and the outlet of cracking selenium source, evenly be covered with the multi hole grid of aperture less than 0.5mm; Be connected with outlet pipe in the said cracking selenium source outlet, said outlet pipe is the wreath that stainless steel tube surrounds, and a hole as air inlet is arranged on the periphery of outlet pipe; Be covered with the aperture as spray orifice on one facial canal of outlet pipe, spray orifice is aimed at substrate; Said Pintsch process chamber is that the outside is surrounded by the ceramic wool heat-insulation layer, installs the groove of multi hole grid on the inwall in addition; Said multi hole grid is a boron nitride material; Have oral area not limit the spray orifice of quantity perpendicular to substrate surface on the said outlet pipe, said cracking selenium source is ejected into substrate surface from the spray orifice on the outlet pipe; Said Pintsch process chamber and outlet pipe are positioned at the vacuum chamber; Said selenium source vaporization chamber periphery all is surrounded by the ceramic wool heat-insulation layer.
Preparation of the utility model and use:
⑴ the preparation process of the utility model
Prepare out selenium source vaporization chamber 4, Pintsch process chamber 8, vacuum chamber 14 and outlet pipe 11 respectively;
Select for use volume greater than the stainless steel tubbiness thing of 1L as the selenium source vaporization chamber, the osculum on the selenium source vaporization chamber is as vapor outlet port 3, the bottom in the selenium source vaporization chamber is equipped with temperature control heater 2, solid-state selenium 5 is positioned at above the temperature control heater; Select for use a stainless steel passage as the Pintsch process chamber; Pintsch process chamber one end is that cracking room import 7, the other end are cracking selenium source outlet 9; Have on the Pintsch process chamber interior walls be parallel to each other and perpendicular to center line two the circle grooves, respectively be fixed with a boron nitride multi hole grid 15 that evenly is covered with aperture 0.3mm on the groove; Select for use cavity that stainless steel processes as vacuum chamber; Select for use wreath that stainless steel tube surrounds as outlet pipe, a hole as air inlet 10 is arranged on the periphery of outlet pipe; Be covered with aperture on one facial canal of outlet pipe, directly to spray orifice volume to volume substrate 12 as spray orifice 13; As pipeline 6 vaporization chamber outlet and cracking room inlet seal are connected into path with stainless steel tube, in like manner the outlet of cracking selenium source is tightly connected into path with said air inlet with the stainless steel pipeline; The outside of said selenium source vaporization chamber, pipeline and Pintsch process chamber all is surrounded by ceramic wool heat-insulation layer 1; Pintsch process chamber and outlet pipe place in the vacuum chamber, and the selenium source vaporization chamber is positioned at the vacuum chamber outside; With vacuumizing in the vacuum chamber, prepare utility model large tracts of land volume to volume flexible substrate jet surface cracking selenium source and use device.
⑵ the use of the utility model:
Start in the selenium source vaporization chamber and the indoor temperature control heater of Pintsch process, solid-state selenium is heated to 300 ℃, produce selenium steam; Selenium steam gets into the Pintsch process chamber of 550 ℃ of temperature through pipeline, and selenium steam passes among the step ⑴ behind the multi hole grid in that Pintsch process is indoor, and selenium steam is by the Se of n>=5
nThick atom group is cracked into n<5 Se
nLittle atomic group forms the cracking selenium source, has increased high activity Se
2Quantity, improved the reactivity of selenium element, the outlet pipe that said cracking selenium source gets into 450 ℃ of temperature is ejected into large tracts of land volume to volume flexible substrate surface through spray orifice, accomplishes the process at large tracts of land volume to volume flexible substrate jet surface cracking selenium source.
The above is merely the preferred embodiment of the utility model.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model principle, can also make some distortion and improvement, this also should belong to the protection range of the utility model.
Claims (6)
1. a large tracts of land volume to volume flexible substrate jet surface cracking selenium source is used device; Comprise the volume to volume substrate that is used to spray selenium source in the selenium source vaporization chamber that has the temperature control heater and be built-in with solid-state selenium and the vacuum chamber, it is characterized in that: the vapor outlet port of said selenium source vaporization chamber is connected with the Pintsch process chamber through pipeline; Said Pintsch process chamber is the metallic cavity that has import and outlet, and said import is called the cracking room import, said outlet is called the outlet of cracking selenium source; More than being fixed with two-layer reaching on the cavity inner wall between cracking room import and the outlet of cracking selenium source, evenly be covered with the multi hole grid of aperture less than 0.5mm.
2. large tracts of land volume to volume flexible substrate jet surface cracking selenium source according to claim 1 is used device; It is characterized in that: be connected with outlet pipe in the said cracking selenium source outlet; Said outlet pipe is the wreath that stainless steel tube surrounds, and a hole as air inlet is arranged on the periphery of outlet pipe; Be covered with the aperture as spray orifice on one facial canal of outlet pipe, spray orifice is aimed at substrate.
3. large tracts of land volume to volume flexible substrate jet surface cracking selenium source according to claim 1 is used device, and it is characterized in that: said Pintsch process chamber is that the outside is surrounded by the ceramic wool heat-insulation layer, installs the groove of multi hole grid on the inwall in addition.
4. large tracts of land volume to volume flexible substrate jet surface cracking selenium source according to claim 1 and 2 is used device, and it is characterized in that: said multi hole grid is a boron nitride material.
5. large tracts of land volume to volume flexible substrate jet surface cracking selenium source according to claim 1 is used device, it is characterized in that said Pintsch process chamber and outlet pipe are positioned at the vacuum chamber.
6. large tracts of land volume to volume flexible substrate jet surface cracking selenium source according to claim 1 is used device, and it is characterized in that: said selenium source vaporization chamber periphery all is surrounded by the ceramic wool heat-insulation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205390617U CN202373561U (en) | 2011-12-21 | 2011-12-21 | Device for large-area roll-to-roll flexible substrate surface spraying and cracking selenium source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205390617U CN202373561U (en) | 2011-12-21 | 2011-12-21 | Device for large-area roll-to-roll flexible substrate surface spraying and cracking selenium source |
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| Publication Number | Publication Date |
|---|---|
| CN202373561U true CN202373561U (en) | 2012-08-08 |
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ID=46597255
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011205390617U Expired - Fee Related CN202373561U (en) | 2011-12-21 | 2011-12-21 | Device for large-area roll-to-roll flexible substrate surface spraying and cracking selenium source |
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|---|---|
| CN (1) | CN202373561U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716222A (en) * | 2013-12-11 | 2015-06-17 | 中国电子科技集团公司第十八研究所 | Method for manufacturing CIGS thin film by splitting selenium steam through radio frequency |
| CN106032895A (en) * | 2015-03-10 | 2016-10-19 | 深圳首创新能源股份有限公司 | A preparation device and a preparation method for selenium steam |
-
2011
- 2011-12-21 CN CN2011205390617U patent/CN202373561U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716222A (en) * | 2013-12-11 | 2015-06-17 | 中国电子科技集团公司第十八研究所 | Method for manufacturing CIGS thin film by splitting selenium steam through radio frequency |
| CN104716222B (en) * | 2013-12-11 | 2019-01-01 | 中国电子科技集团公司第十八研究所 | The method that radio frequency cracks selenium steam production CIGS thin-film |
| CN106032895A (en) * | 2015-03-10 | 2016-10-19 | 深圳首创新能源股份有限公司 | A preparation device and a preparation method for selenium steam |
| CN106032895B (en) * | 2015-03-10 | 2018-05-01 | 深圳首创新能源股份有限公司 | A kind of preparation facilities and preparation method of selenium steam |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120808 Termination date: 20161221 |
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| CF01 | Termination of patent right due to non-payment of annual fee |