CN202380080U - Device for spraying and pyrolyzing selenium source on surface of small-area substrate - Google Patents
Device for spraying and pyrolyzing selenium source on surface of small-area substrate Download PDFInfo
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- CN202380080U CN202380080U CN2011205405881U CN201120540588U CN202380080U CN 202380080 U CN202380080 U CN 202380080U CN 2011205405881 U CN2011205405881 U CN 2011205405881U CN 201120540588 U CN201120540588 U CN 201120540588U CN 202380080 U CN202380080 U CN 202380080U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The utility model relates to a device for spraying and pyrolyzing a selenium source on the surface of a small-area substrate. The device comprises a selenium source evaporation chamber and the substrate, and is characterized in that two layers of porous grid plates are fixedly mounted in the selenium source evaporation chamber in positions above solid selenium; holes with the pore diameters smaller than 0.5 mm are uniformly and fully distributed in the grid plates; a high-temperature pyrolyzing chamber is formed between the two layers of porous grid plates; and an outlet above the upper layer of porous grid plate is a pyrolyzed selenium source outlet. According to the utility model, selenium vapour passes through the two layers of porous grid plates at high temperature, and Se<n> (n is greater than or equal to 5) large radicals are pyrolyzed into Se<n> (n is smaller than 5) small radicals, so as to increase the quantity of high-activity Se<2> and the reactivity of the selenium element, effectively improve the film forming quality of the CIGS (copper indium gallium selenium) layer of a CIGS thin-film solar cell and play a positive role in improving the photoelectric conversion efficiency of the CIGS thin-film solar cell; and the selenium vapour with the small radicals is directly sprayed on the surface of the substrate through spray orifices, so that the selenium material fully participates in the reaction film forming process of the CIGS layer to improve the utilization ratio of the selenium material.
Description
Technical field
The utility model belongs to the CIGS thin-film solar cell technical field, especially relates to a kind of small area substrate surface injection cracking selenium source and uses device.
Background technology
CIGS thin-film solar cell is that one of thin film solar cell of development potentiality is arranged at present most; Have high conversion efficiency, do not have photic decline, radiation resistance is good, low-cost, be fit to advantages such as volume to volume technology scale operation, its typical structure is: metal back electrode Mo layer, absorption layer cigs layer, impact plies CdS, Window layer high resistant i:ZnO, low-resistance ZnO:Al, MgF
2Antireflective coating and Ni-Al gate electrode, wherein the preparation of absorption layer cigs layer is the core technology of CIGS thin-film solar cell.
Polynary coevaporation method be the preparation cigs layer the most extensively with successful method.Polynary coevaporation method prepares cigs layer, is that reaction chemical combination forms Cu (In at the substrate place with gaseous form by copper, indium, gallium, each element of selenium
xGa
1-x) Se
2Polycrystalline material, wherein the selenium element is very crucial in the forming process of cigs layer.Prepare in the process at cigs layer, solid-state selenium material is placed in the evaporation boat, produces selenium steam through heating evaporation method, and in vacuum chamber, the advantage of this mode is nontoxic, cheap with the gaseous form disperse.But selenium steam is pressed and is difficult to control, and gaseous state selenium is often with Se
n(n>=5) thick atom group form exists; Reactive behavior is relatively poor, is prone to cause selenium element combination reaction insufficient, causes the loss of indium and gallium element; Cause the CIGS film composition to depart from the ideal stoichiometric ratio when reducing material use efficiency, reduce the cigs layer quality of forming film.
Summary of the invention
The utility model is cracked into highly active little atomic group for the technical problem that exists in the solution known technology provides a kind of with thick atom group in the selenium steam; Improve selenium element reaction activity and utilization ratio, the small area substrate surface that effectively improves the cigs layer quality of forming film sprays the cracking selenium source and uses device.
The technical scheme that the utility model is taked for the technical problem that exists in the solution known technology is:
A kind of small area substrate surface sprays the cracking selenium source and uses device; Comprise the substrate that is used to spray selenium source in the selenium source evaporator room that has the temperature control well heater and be built-in with solid-state selenium and the vacuum chamber, be characterized in: be fixed with the two-layer multi hole grid that evenly is covered with the aperture less than 0.5mm in the selenium source evaporator room above the said solid-state selenium; Form the Pintsch process chamber between the two-layer multi hole grid, the top outlet of the multi hole grid of last layer is the outlet of cracking selenium source.
The utility model can also adopt following technical scheme:
Be connected with outlet pipe in the said cracking selenium source outlet, said outlet pipe is that the wreath that stainless steel tube surrounds is done, and a hole as inlet mouth is arranged on the periphery of outlet pipe; Be covered with the aperture as spray orifice on one facial canal of outlet pipe, spray orifice is aimed at substrate.
Said multi hole grid is a boron nitride material.
The outside of said selenium source evaporator room outside and connection outlet pipe all is surrounded by the ceramic wool thermal insulation layer.
Said whole device all is positioned at the vacuum chamber.
Advantage and the positively effect that the utlity model has are:
1, the utility model adopts selenium steam high temperature is passed two-layer multi hole grid, by Se
n(n>=5) thick atom group is cracked into Se
n(n<5) little atomic group has increased high reactivity Se
2Quantity, improved the reactive behavior of selenium element, effectively improved the quality of forming film of CIGS thin-film solar cell cigs layer, the photoelectric transformation efficiency that improves CIGS thin-film solar cell is played active effect.
2, the utility model is directly injected to substrate surface to the selenium steam of little atomic group through spray orifice, makes the selenium material fully participate in the membrane process that is reacted into of cigs layer, thereby improves the selenium material use efficiency.
Description of drawings
Fig. 1 is that the utility model prepares the small area selenium source and uses the apparatus structure cross-sectional schematic;
Fig. 2 is a selenium source Pintsch process chamber interior synoptic diagram among Fig. 1.
Wherein, 1-thermal insulation layer, 2-temperature control well heater, 4-selenium source evaporator room, the solid-state selenium of 5-, 8-Pintsch process chamber, the outlet of 9-cracking selenium source, 10-inlet mouth, 11-outlet pipe, 12-substrate, 13-spray orifice, 14-vacuum chamber, 15-multi hole grid.
Embodiment
For further understanding summary of the invention, characteristics and the effect of the utility model, the following examples of giving an example now, and conjunction with figs. 1-2 specifies as follows:
A kind of small area substrate surface sprays the cracking selenium source and uses device, comprises the substrate that is used to spray selenium source in the selenium source evaporator room that has the temperature control well heater and be built-in with solid-state selenium and the vacuum chamber.
The innovative point of the utility model is: be fixed with the two-layer multi hole grid that evenly is covered with the aperture less than 0.5mm in the selenium source evaporator room above the said solid-state selenium; Form the Pintsch process chamber between the two-layer multi hole grid, the top outlet of the multi hole grid of last layer is the outlet of cracking selenium source; Be connected with outlet pipe in the said cracking selenium source outlet, said outlet pipe is that the wreath that stainless steel tube surrounds is done, and a hole as inlet mouth is arranged on the periphery of outlet pipe; Be covered with the aperture as spray orifice on one facial canal of outlet pipe, spray orifice is aimed at substrate; Said multi hole grid is a boron nitride material; The outside of said selenium source evaporator room outside and connection outlet pipe all is surrounded by the ceramic wool thermal insulation layer; Said whole device all is positioned at the vacuum chamber.
Preparation of the utility model and use:
⑴ the preparation process of the utility model
Prepare out selenium source evaporator room 4, vacuum chamber 14 and outlet pipe 11 respectively;
Select for use the long bucket of a kind of stainless steel as the selenium source evaporator room; Bottom in the selenium source evaporator room is equipped with temperature control well heater 2; Solid-state selenium 5 is positioned at above the temperature control well heater; Have on the selenium source evaporator room inwall above the solid-state selenium and two-layerly be parallel to each other and, respectively be fixed with a SP 1 multi hole grid 15 that evenly is covered with aperture 0.3mm on the groove perpendicular to the groove of medullary ray; Between two multi hole grids as Pintsch process chamber 8; Select for use cavity that stainless steel processes as vacuum chamber; Select for use wreath that stainless steel tube surrounds as outlet pipe, a hole as inlet mouth 10 is arranged on the periphery of outlet pipe; Be covered with the aperture as spray orifice 13 on the one side of outlet pipe, the medullary ray of aperture is perpendicular to 12 of substrates; The mouth of the multi hole grid top, upper strata in the selenium source evaporator room is as cracking selenium source outlet 9, and the outlet of cracking selenium source is tightly connected into path with inlet mouth on the said outlet pipe; The outside of said path and selenium source evaporator room all is surrounded by ceramic wool thermal insulation layer 1; All device is inserted in the vacuum chamber; To vacuumizing in the vacuum chamber, carry out the preparation of Pintsch process selenium source;
⑵ the use of the utility model:
Start the temperature control well heater in the selenium source evaporator room, solid-state selenium is heated to 550 ℃ forms selenium steams, selenium steam passes behind the lower floor's multi hole grid among the step ⑴ at the indoor step ⑴ that passes again of Pintsch process at the middle and upper levels behind the multi hole grid, and selenium steam is by the Se of n>=5
nThick atom group is cracked into n<5 Se
nLittle atomic group forms the cracking selenium source, has increased high reactivity Se
2Quantity, improved the reactive behavior of selenium element, the outlet pipe that said cracking selenium source gets into 450 ℃ of temperature is ejected into substrate surface through spray orifice, accomplishes the process of spraying the cracking selenium source at the small area substrate surface.
The above is merely the preferred embodiment of the utility model.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model principle, can also make some distortion and improvement, this also should belong to the protection domain of the utility model.
Claims (5)
1. a small area substrate surface injection cracking selenium source is used device; Comprise the substrate that is used to spray selenium source in the selenium source evaporator room that has the temperature control well heater and be built-in with solid-state selenium and the vacuum chamber, it is characterized in that: be fixed with the two-layer multi hole grid that evenly is covered with the aperture less than 0.5mm in the selenium source evaporator room above the said solid-state selenium; Form the Pintsch process chamber between the two-layer multi hole grid, the top outlet of the multi hole grid of last layer is the outlet of cracking selenium source.
2. small area substrate surface according to claim 1 sprays the cracking selenium source and uses device; It is characterized in that: be connected with outlet pipe in the said cracking selenium source outlet; Said outlet pipe is that the wreath that stainless steel tube surrounds is done, and a hole as inlet mouth is arranged on the periphery of outlet pipe; Be covered with the aperture as spray orifice on one facial canal of outlet pipe, spray orifice is aimed at substrate.
3. small area substrate surface according to claim 1 sprays the cracking selenium source and uses device, and it is characterized in that: said multi hole grid is a boron nitride material.
4. small area substrate surface according to claim 1 sprays the cracking selenium source and uses device, it is characterized in that: the outside of said selenium source evaporator room outside and connection outlet pipe all is surrounded by the ceramic wool thermal insulation layer.
5. small area substrate surface according to claim 1 sprays the cracking selenium source and uses device, and it is characterized in that: said whole devices all are positioned at the vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205405881U CN202380080U (en) | 2011-12-21 | 2011-12-21 | Device for spraying and pyrolyzing selenium source on surface of small-area substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205405881U CN202380080U (en) | 2011-12-21 | 2011-12-21 | Device for spraying and pyrolyzing selenium source on surface of small-area substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202380080U true CN202380080U (en) | 2012-08-15 |
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ID=46628597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011205405881U Expired - Fee Related CN202380080U (en) | 2011-12-21 | 2011-12-21 | Device for spraying and pyrolyzing selenium source on surface of small-area substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202380080U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102965641A (en) * | 2012-12-05 | 2013-03-13 | 中国电子科技集团公司第十八研究所 | Selenizing method of CIGS (Copper Indium Gallium Selenide) layer of thin film solar cell |
| CN107338421A (en) * | 2017-07-01 | 2017-11-10 | 安徽恒致铜铟镓硒技术有限公司 | The generation device and production method that the controllable high activity selenium of flow or sulfur crack are vented one's spleen |
-
2011
- 2011-12-21 CN CN2011205405881U patent/CN202380080U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102965641A (en) * | 2012-12-05 | 2013-03-13 | 中国电子科技集团公司第十八研究所 | Selenizing method of CIGS (Copper Indium Gallium Selenide) layer of thin film solar cell |
| CN107338421A (en) * | 2017-07-01 | 2017-11-10 | 安徽恒致铜铟镓硒技术有限公司 | The generation device and production method that the controllable high activity selenium of flow or sulfur crack are vented one's spleen |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120815 Termination date: 20161221 |
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| CF01 | Termination of patent right due to non-payment of annual fee |