CN102959006B - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor device Download PDFInfo
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- CN102959006B CN102959006B CN201180031200.8A CN201180031200A CN102959006B CN 102959006 B CN102959006 B CN 102959006B CN 201180031200 A CN201180031200 A CN 201180031200A CN 102959006 B CN102959006 B CN 102959006B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Polymers & Plastics (AREA)
- Computer Hardware Design (AREA)
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- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Die Bonding (AREA)
- Epoxy Resins (AREA)
Abstract
Provided is an epoxy resin composition with which high mechanical strength as well as high retention of coated shapes can be obtained. The disclosed epoxy resin composition (1) comprises epoxy resin, curing agent and inorganic filler and is liquid at room temperature. For said inorganic filler, 0.1-30 mass% of a scale-like inorganic substance with mean aspect ratio of 2-150 is contained with respect to the total amount of said epoxy resin composition (1). The thixotropic index of said epoxy resin composition (1) is 3.0-8.0.
Description
Technical field
The present invention relates to by semiconductor element mounting to substrate time, be suitable as side and fill out the composition epoxy resin that resin (sidefill resin) uses and the semiconductor device using this composition epoxy resin semiconductor element mounting to be formed to substrate.
Background technology
In the past, by BGA (Ball Grid Array; Ball grid array) etc. semiconductor element 2 be installed in the secondary installing of the substrates such as printed circuit board (PCB) 3 by projection 7, do not carry out the operation strengthening installation site with resin, but in recent years along with the progress of compactization of semiconductor device 4, do not carry out the enhancing based on resin, then gradually whereabouts and bending etc. in cannot obtain sufficient physical strength.Therefore, as illustrated in fig. 3, carry out making the ends such as composition epoxy resin to fill out resin 5 and be impregnated into semiconductor element 2 and the gap of substrate 3 and the operation (for example, referring to patent documentation 1) of filling.
But soaking into of resin 5 is filled out at the end needs the long period.In addition, even if find substandard products in the inspection of semiconductor device 4 or in using, to be filled in semiconductor element 2 and the whole gap of substrate 3 because resin 5 is filled out at the end and to solidify, being thus difficult to from substrate 3, take out semiconductor element 2 and replace with salable product.That is, there is the low such problem of repairability.
Thus, recently, as shown in Figure 1, carry out operation as described below: do not make the end fill out gap that resin 5 is impregnated into semiconductor element 2 and substrate 3, but by using composition epoxy resin etc. to fill out resin 6 as side, only around semiconductor element 2 or its part four angles of semiconductor element 2 (in Fig. 1 for) be coated with and make it solidify, thus make semiconductor element 2 bonding with substrate 3.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2002-170910 publication
Summary of the invention
Invent problem to be solved
But, when the side shown in Fig. 1 fills out resin 6, compared with the situation of filling out resin 5 with the end shown in Fig. 3, semiconductor element 2 diminishes with the contact area of substrate 3 inevitably, thus there is the such problem of physical strength step-down when using and filling out the resin of resin 5 same composition the end of with.
In addition, existing side is filled out in resin 6, also there is the low such problem of retentivity of coating shape.Even if that is, as illustrated in fig. 1 only around semiconductor element 2 or its a part of coated side fill out resin 6, under the effect of the heating for solidifying, viscosity can temporarily reduce, thus is impregnated into the gap of semiconductor element 2 and substrate 3.Like this, initial coating shape changes, and is accompanied by this, and bonding strength becomes uneven, thus the quality destabilization of semiconductor device 4.
The present invention completes in view of above-mentioned viewpoint, its object is to, the composition epoxy resin of the retentivity that can obtain high mechanical strength and can keep high coating shape is provided, and can high mechanical strength be obtained and the also excellent semiconductor device of repairability.
For the method for dealing with problems
The composition epoxy resin that the present invention relates to is containing epoxy resin, solidifying agent and inorganic filling material and is at room temperature aqueous composition epoxy resin, it is characterized in that, as aforementioned inorganic packing material, containing the flakey inorganics that the mean aspect ratio being 0.1 ~ 30 quality % relative to the total amount of aforementioned epoxy resins composition is 2 ~ 150, and the thixotropy index of aforementioned epoxy resins composition is 3.0 ~ 8.0.
In aforementioned epoxy resins composition, preferred aforementioned inorganic packing material is the material being selected from mica and talcum.
In aforementioned epoxy resins composition, preferred aforementioned inorganic packing material has carried out surface treatment by silane coupling agent.
The semiconductor device that the present invention relates to is semiconductor device semiconductor element mounting formed to substrate, it is characterized in that, by around aforesaid semiconductor element or its part coating aforementioned epoxy resins composition make it solidify, thus aforesaid semiconductor element is bonding with aforesaid base plate.
Invention effect
According to the composition epoxy resin that the present invention relates to, by semiconductor element mounting to substrate time, as side fill out resin use when, fill out resin-phase ratio the end of with, even if a small amount of use also can obtain high mechanical strength, and can obtain the retentivity of high coating shape.
Accompanying drawing explanation
Fig. 1 is that (a) of the figure of the example representing the semiconductor device that the present invention relates to, Fig. 1 is cross-sectional, (b) of Fig. 1 is diagrammatic top view.
Fig. 2 is the explanatory view of the state representing falling weight impact test.
Fig. 3 is that (a) of the figure of the example representing existing semiconductor device, Fig. 3 is cross-sectional, (b) of Fig. 3 is diagrammatic top view.
Embodiment
Below, embodiments of the present invention are described.
The composition epoxy resin 1 that the present invention relates to is containing epoxy resin, solidifying agent and inorganic filling material and is aqueous composition epoxy resin under room temperature (25 DEG C).
As epoxy resin, as long as have the compound of the glycidyl of more than 1 in 1 molecule, be not particularly limited, can use such as, be selected from bisphenol A type epoxy resin, bisphenol f type epoxy resin, bisphenol-s epoxy resin, their hydrogenation type epoxy resin, there is the biphenyl type epoxy resin of xenyl skeleton, containing naphthalene nucleus epoxy resin, alicyclic epoxy resin, there is the dicyclopentadiene-type epoxy resin of Dicyclopentadiene (DCPD) skeleton, phenol novolak type epoxy resin, cresol novolak type epoxy resin, triphenylmethane type epoxy resin, brominated epoxy resin, fat family epoxy resin, triglycidyl group isocyanuric acid ester, epoxy resin in poly-alkane diol type epoxy resin etc.
Epoxy resin can be liquid at 5 ~ 28 DEG C also can be solid.When epoxy resin is solid, by additional thinner etc., composition epoxy resin 1 can be made at room temperature to become aqueous.
As solidifying agent, as long as the solidifying agent that can react with epoxy resin is just not particularly limited, the solidifying agent in the amines such as anhydrides, diaminodiphenyl-methane and mphenylenediamine, imidazoles, polythiol class, cyanates etc. such as being such as selected from phenol, Tetra hydro Phthalic anhydride, Tetra Hydro Phthalic Anhydride, methyl tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride (nadic anhydride) and trimellitic acid 1,2-anhydride can be used.The content of solidifying agent is preferably 5 ~ 55 quality % relative to composition epoxy resin 1 total amount, is more preferably 10 ~ 30 quality %.
As inorganic filling material, use mean aspect ratio (major diameter/minor axis) is the flakey inorganics of 2 ~ 150.When the mean aspect ratio of flakey inorganics is less than 2, fully cannot obtain the cured article apparatus with shock absorbing of composition epoxy resin 1 and be converted to the effect of heat of friction, and when the manufacture of semiconductor device 4, composition epoxy resin 1 fills out the end of as the gap that resin 5 is easily impregnated into semiconductor element 2 and substrate 3.On the contrary, when the mean aspect ratio of flakey inorganics is greater than 150, although can expect the assimilation effect in impact energy, the gap to semiconductor element 2 and substrate 3 soak into inhibition, but when composition epoxy resin 1 is coated into the shape of expectation from the ejection such as syringe, wire drawing can occur, or viscosity, thixotropy excessively improve and cause being difficult to spray itself.If the mean aspect ratio of flakey inorganics is excessive further, be then difficult to prepare homodisperse composition epoxy resin 1.In addition, the mean aspect ratio of inorganic filling material can calculate as described below.First mixture epoxy resin, solidifying agent, inorganic filling material and prepare composition epoxy resin 1, make it solidify, thus make thickness be about the sheet metal forming of 5mm.Then cut off this plate along the direction parallel with thickness direction, take cut surface with electron microscope, select the cut surface of 5 positions.Then, for total 100 inorganic filling materials, major diameter and minor axis can also be measured, obtain the mean value of its ratio, thus calculate mean aspect ratio.In addition, the median size of inorganic filling material is preferably 0.5 ~ 25 μm, is more preferably 3 ~ 20 μm, and this median size can be measured by such as laser diffraction formula particle size distribution device etc.
As mentioned above, as inorganic filling material, as long as the flakey inorganics that mean aspect ratio is 2 ~ 150 is just not particularly limited, be preferably selected from the material in such as crystalline silica, fused silica, aerosil, fine particle silica, aluminum oxide, clay, mica, talcum (taking hydrous magnesium silicate as the ore of main component), aluminium hydroxide, magnesium hydroxide, calcium carbonate, glass, silicon nitride, magnesium oxide etc.Wherein, inorganic filling material is preferably selected from the material of mica and talcum.Mica and talcum are soft inorganics, soft inorganics is like this compared with the inorganic such as silicon-dioxide, aluminum oxide thing, the assimilation effect of impact energy uprises, the cured article of composition epoxy resin 1 can be suppressed to crack, and the transmission of energy to semiconductor element 2, substrate 3 can be reduced.
In addition, inorganic filling material preferably carries out surface treatment by silane coupling agent.Here, as silane coupling agent, be not particularly limited, can use and be selected from such as γ-glycidoxypropyltrimewasxysilane, γ-glycidoxypropyl triethoxyl silane, the epoxy silanes such as 2-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ aminopropyltriethoxy silane, N-β (amino-ethyl) gamma-amino propyl trimethoxy silicane, N-β (amino-ethyl) gamma-amino hydroxypropyl methyl dimethoxysilane, gamma-amino propyl trimethoxy silicane, the aminosilane of γ-urea propyl-triethoxysilicane etc., the hydrosulphonyl silanes such as 3-mercaptopropyi Trimethoxy silane, to vinylbenzene Trimethoxy silane, vinyl trichloro silane, vinyl three ('beta '-methoxy oxyethyl group) silane, vinyltrimethoxy silane, vinyltriethoxysilane, the vinyl silanes such as γ-methacryloxypropyl trimethoxy silane, also has epoxy, amino system, silane coupling agent in the silane of the polymer type of ethene base system etc.If use such silane coupling agent, and by drying process, damp process, overall blending method etc., surface treatment is carried out to inorganic filling material, then can improve inorganic filling material and the closing force of resinous principle comprising epoxy resin and solidifying agent, the cured article of composition epoxy resin 1 can be suppressed to crack, and the closing force at the interface at cured article and semiconductor element 2 and substrate 3 can be improved.The content of silane coupling agent is preferably 0.1 ~ 0.3 quality % relative to composition epoxy resin 1 total amount.
In addition, relative to composition epoxy resin 1 total amount, the mean aspect ratio containing 0.1 ~ 30 quality % is the flakey inorganics of 2 ~ 150.Be preferably 0.5 ~ 10 quality %, be more preferably 3 ~ 7 quality %.If above-mentioned flakey inorganics containing quantity not sufficient 0.1 quality %, then fully cannot obtain the cured article apparatus with shock absorbing of composition epoxy resin 1 and be converted to the effect of heat of friction, and when the manufacture of semiconductor device 4, composition epoxy resin 1 fills out resin 5 end of as, is easily impregnated into the gap of semiconductor element 2 and substrate 3.On the contrary, if the content of above-mentioned flakey inorganics is more than 30 quality %, then the toughness suffer of cured article, hardening and crisp, easily crack.
Then, the composition epoxy resin 1 that the present invention relates to can be prepared by mode as described below: the above-mentioned epoxy resin of mixture, solidifying agent and inorganic filling material, and it is disperseed by planetary mixer, homogenous disperse device and mixed.The thixotropy index of the composition epoxy resin 1 of such acquisition is 3.0 ~ 8.0.If the thixotropy index of composition epoxy resin 1 is less than 3.0, then the retentivity being coated with shape is insufficient.On the contrary, if the thixotropy index of composition epoxy resin 1 is more than 8.0, then produce wire drawing during coating and operability is deteriorated.In addition, the thixotropy index of composition epoxy resin 1 can be calculated by mode as described below: at 25 DEG C, use the rotational viscosimeters such as Brookfield viscometer, being determined at rotor is viscosity when rotating under the slow speed of revolution and high rotating speed (slow-revving 8 ~ 10 times), calculates with the form of the ratio of these viscosity (viscosity during viscosity during slow speed of revolution/high rotating speed).
In addition, only otherwise damage object of the present invention, except epoxy resin, solidifying agent and inorganic filling material, can also other materials of mixture in composition epoxy resin 1 as required.As such material, be not particularly limited, can use such as, amine, polyamide-based, curing catalyst, dispersion stabilizer, fire retardant, low elasticity agent, thixotropy conferring agents, tinting material, the thinner etc. such as imidazoles, Lewis acid.Wherein, thixotropy conferring agents may be used for the adjustment of thixotropy index.In addition, as curing catalyst, the organic phosphine system curing catalysts, 1 such as imidazoles system curing catalyst, triphenylphosphine, tributylphosphine, trimethyl-phosphine such as being selected from microcapsule-type On The Latent Accelerator, glyoxal ethyline, 2-phenylimidazole can be used, 8-diazabicylo (5,4,0) curing catalyst in tertiary amine system curing catalyst such as hendecene-7, trolamine, benzyl dimethyl amine etc.
Fig. 1 is the figure of the example representing the semiconductor device 4 that the present invention relates to, and semiconductor element 2 is installed to substrate 3 and installs formation by it.Here, as semiconductor element 2, BGA (Ball Grid Array), FBGA (Fine pitch Ball GridArray can be used; Micro-spacing ball grid array), CSP (Chip Size (Scale) Package; Chip size (ratio) encapsulates) etc.In addition, as substrate 3, the printed circuit board (PCB)s such as organic resin substrate, ceramic substrate, Metal base substrate, glass substrate such as FR-4 can be used.Then, after semiconductor element 2 being installed to substrate 3 by flip-chip installation etc., around semiconductor element 2 or its part coating to fill out the composition epoxy resin of the present invention 1 of resin 6 as side.In Fig. 1, at four angles of semiconductor element 2, from the side of semiconductor element 2 to the surface of substrate 3, composition epoxy resin 1 is coated into and overlooks L-shaped, but be not limited thereto.Then, by making composition epoxy resin 1 solidify in curing oven, thus manufacture semiconductor element 2 and substrate 3 by the bonding semiconductor device 4 of the cured article of composition epoxy resin 1.Here, if by the heating for solidifying, the viscosity of composition epoxy resin 1 temporarily reduces, then there is the possibility that this composition epoxy resin 1 is impregnated into the gap between semiconductor element 2 and substrate 3.But, this possibility is filled out with the use existing end compared with the situation of resin 5, very low, when using composition epoxy resin 1 of the present invention to fill out resin 6 as side, about 0.2mm is soaked into as far as possible from the side of semiconductor element 2, as long as soaking into of this degree, then can say that the retentivity of coating shape is high.In addition, according to the composition epoxy resin 1 that the present invention relates to, fill out compared with resin 5 end of with, even if a small amount of use, also can obtain high mechanical strength under the common using state of semiconductor device 4.Further, the composition epoxy resin 1 that the present invention relates to only is applied to the surrounding of semiconductor element 2 or its part and makes it solidify, do not fill in the whole gap of semiconductor element 2 with substrate 3, thus in the inspection of semiconductor device 4 or when finding substandard products in using, can easily be taken out from substrate 3 by semiconductor element 2 and replace with salable product, repairability be also excellent.
In addition, the crooked elastic rate of the cured article of composition epoxy resin 1 is preferably more than 0.1GPa.Thereby, it is possible to fully obtain the reinforced effects of installation site.Be more preferably more than 3GPa.
Embodiment
Below, the present invention is illustrated by embodiment.
As epoxy resin, be used as Dongdu of bisphenol f type epoxy resin to change into (strain) system " YDF8170 " (epoxy equivalent (weight) 160), change into (strain) system " YD8125 " (epoxy equivalent (weight) 175) as Dongdu of bisphenol A type epoxy resin, as large Japanese ink chemical industry (strain) system " HP4032D " (epoxy equivalent (weight) 141) containing naphthalene nucleus epoxy resin.
In addition, as solidifying agent, be used as the bright of allylation phenol and change into (strain) system " MEH8000H " (OH base equivalent 141), as japan epoxy resin (strain) system " E-picureYH306 " (anhydride equivalent 234) of acid anhydrides, (strain) ADEKA system " EH4070S " as polyamines system solidifying agent.
In addition, as inorganic filling material, use the fused silica (median size 6 μm that electrochemically industry (strain) is made, mean aspect ratio 2, flakey inorganics), lime industry (strain) system " セ ラ シ ユ mono-Le BMF " (median size 5 μm is closed in river as aluminum oxide, mean aspect ratio 50, flakey inorganics), loose village industry (strain) as talcum makes " Hi-Filler Talc 12 " (median size 5 μm, mean aspect ratio 80, flakey inorganics), as (strain) mountain pass mica industry made " the TM-20 " (median size 18 μm of mica, mean aspect ratio 150, flakey inorganics), MRC Unitec (strain) as melting spherical silicon dioxide makes " QS6 " (median size 6 μm, mean aspect ratio 1).
Further, be used as Asahi Chemical Industry's (strain) system " HXA3792 " of microcapsule-type On The Latent Accelerator, as silicon rubber and GE Toshiba Silicone (strain) system " XE14-A8491 " of low elasticity agent, as the Tan Ji Mitsubishi Chemical (strain) system " MA100 " of tinting material, as aerosil and the Japanese AEROSIL (strain) system " RY200 " of thixotropy conferring agents, as Momentive Performance Materials Inc. system " A186 " of silane coupling agent, as two anion exchange material and East Asia synthesis (strain) system " IXE-600 " of inorganic ion exchanger.
Then, according to the above-mentioned epoxy resin of blend amount (mass parts) mixture, solidifying agent and inorganic filling material etc. shown in following [table 1], disperseed by planetary mixer, homogenous disperse device and mixed, thus being aqueous composition epoxy resin 1 under the room temperature of preparation embodiment 1 ~ 8 and comparative example 1 ~ 3.In addition, in embodiment 8, by overall blending method, with silane coupling agent, surface treatment is carried out to inorganic filling material.
Then, for the project of following (1) ~ (6), the evaluation of each composition epoxy resin 1 is carried out.
(1) viscosity
Under room temperature (25 DEG C), use Brookfield viscometer to measure viscosity.The mensuration of viscosity uses No.7 rotor and by speed setting for 20rpm carries out, but when exceed measure gauge, rotating speed is reduced to 10rpm, is down to 5rpm to measure further.
(2) thixotropy index
Under room temperature (25 DEG C), use Brookfield viscometer, measure the viscosity when slow speed of revolution and high rotating speed, calculate thixotropy index with the form of the ratio of these viscosity.The mensuration of viscosity uses No.7 rotor by speed setting for 2.5rpm and 20rpm carries out, but when exceeding mensuration gauge, rotating speed being reduced to 1rpm and 10rpm, being down to 0.5rpm and 5rpm to measure further, calculating thixotropy index.
(3) gelation time
The temperature of hot plate is set as 150 ± 2 DEG C, this hot plate loads the composition epoxy resin 1 of about 1g, measure with 1 second interval it is stirred until the time that cannot stir, it can be used as gelation time.
(4) second-order transition temperature (Tg)
Under the condition of 120 DEG C, 1 hour, make composition epoxy resin 1 solidify, be cut into wide 5mm × long 50mm × thick 0.2mm, used as test film.For this test film, measure second-order transition temperature (Tg) by DMA method.Mensuration based on DMA method uses visco-elasticity spectrograph, carries out under beam mode.Condition determination is as follows: frequency: 10Hz, heat-up rate: 5 DEG C/min, mensuration temperature :-60 ~ 280 DEG C.
(5) linear expansivity
Condition at 120 DEG C, 1 hour makes composition epoxy resin 1 solidify, and is cut into 3mm × 3mm × long 15mm, used as test film.For this test film, use apparatus for thermal analysis and measure linear expansivity by TMA method.Condition determination is as follows: heat-up rate: 5 DEG C/min, mensuration temperature: 30 ~ 260 DEG C.
(6) crooked elastic rate
Under the condition of 120 DEG C, 1 hour, make composition epoxy resin 1 solidify, be cut into wide 10mm × long 80mm × thick 3mm, used as test film.For this test film, under room temperature (25 DEG C), carry out 3 pliability tests based on universal tensile compression testing machine, measure crooked elastic rate.Condition determination is as follows: trial speed: 2mm/ minute, distance between the fulcrum: 48mm.
Then, in order to evaluate for the project of following (7) ~ (10), used each composition epoxy resin 1 to manufacture evaluate semiconductor device 4.As semiconductor element 2, use 14mm FBGA (552I/O, 0.4mm pitch, ball size 250 μm), as substrate 3, use FR-4 (thick 0.6mm).Then, after semiconductor element 2 being installed to substrate 3 by flip-chip installation, fill out resin 6 as side and use composition epoxy resin 1, as illustrated in fig. 1, at four angles of semiconductor element 2, from the side of semiconductor element 2 to the surface coated composition epoxy resin 1 of substrate 3, and be coated into and overlook L-shaped.Then, be warming up to 120 DEG C with 5 minutes from room temperature (25 DEG C) based in curing oven, at 120 DEG C, keep the flow process of 8 minutes further, composition epoxy resin 1 is solidified, thus has manufactured semiconductor device 4.
(7) repairability
Use each 3 semiconductor devices 4, have rated repairability.Repair carry out in the following way: use hot air type repair machine (Hozan (strain) system) to semiconductor device 4 blow attached make the temperature of cured article become the hot blast of 150 DEG C while, use bamboo let take out cured article from strippable substrate.Even if the situation remaining the cured article of 10 more than volume % in substrate 3 side is judged to be that "×", cured article also to confirm the residue of thinner film like less than 10 volume % situation in substrate 3 side is judged to be " △ ", the situation all different from these situations is judged to be "○", carry out the evaluation of repairability.In addition, there is not the diverse situation of judgement of 3 semiconductor devices 4, the judgement of plurality is shown in following [table 1].
(8) resin invasive
Use each 3 semiconductor devices 4, have rated resin invasive (to impregnability with the gap of substrate 3 of semiconductor element 2).Specifically, use hot air type repair machine (Hozan (strain) system), semiconductor device 4 is blown to the hot blast of temperature more than 280 DEG C of attached projection 7, use metal spatula, after peeling off taking-up semiconductor element 2 from substrate 3, computation and measurement from the side of semiconductor element 2 until distance (soaking into distance) between the tip portion of the composition epoxy resin 1 soaked into, thus have rated resin invasive.Soak into distance to calculate with the form of the mean value of 3 semiconductor devices 4.Soak into distance more lower close to 0 resin invasive, can say that the retentivity of coating shape is high.When wettability is excessively poor, the side of the non-contact semiconductor element 2 of composition epoxy resin 1, cannot expect sufficient reinforced effects, thus be judged to be "×".
(9) shock strength
Use each 20 semiconductor devices 4, carry out falling weight impact test, have rated shock strength.Specifically, falling weight impact test uses drop hammer impact testing machine as shown in Figure 2 to carry out.Namely, make semiconductor element 2 towards downside, according to the mode of substrate 3 free bend, semiconductor device 4 is fixed on fixture 8, and does not have mode devious above substrate 3, make the stake shape of 100g hammer 9 repeatedly fall above substrate 3 from the height of 20cm according to impact position.Then, make semiconductor device 4 for switch-on regime time normal, with the change of tester 10 monitored resistance value, computation and measurement is until produce the number of times that drops hammer (hit frequency) before hit.In addition, every make shape hammer 9 fall 10 times time, take out semiconductor device 4 from fixture 8, whether by cracking with observation by light microscope cured article, thus computation and measurement is until the number of times that drops hammer (crackle generation number of times) that cracks.Hit frequency and crackle produce number of times and calculate with the form of the mean value of 20 semiconductor devices 4.
(10) temperature cycle (TC) property
Use each 20 semiconductor devices 4 to carry out temperature cycling test, have rated temperature cycle (TC) property.Specifically, temperature variation is applied to semiconductor device 4, described temperature variation to circulate as 1 time in the gas phase for 5 minutes, 5 minutes at 125 DEG C at-25 DEG C, until 1000 circulations, the work carrying out semiconductor device 4 by the mensuration of resistance value according to every 100 circulation times confirms, the situation of more than 10% resistance value that rises from on-test is judged to be that work is bad.Then, the bad semiconductor device of the work that is judged to be in computation and measurement 20 semiconductor devices 4 reaches cycle number when 10.
For the project of above-mentioned (1) ~ (10), following [table 1] illustrates evaluation result.
[table 1]
Confirmed by above-mentioned [table 1]: compared with comparative example 1 ~ 3, embodiment 1 ~ 8 can obtain high mechanical strength, can obtain the retentivity of high coating shape.In addition, confirmed by embodiment 2 ~ 4,6 ~ 8: if use mica, talcum as inorganic filling material, or with silane coupling agent, surface treatment is carried out to inorganic filling material, physical strength can be improved further.
On the other hand, although in the comparative example 2 using the comparative example 1 of the little spherical inorganic thing of mean aspect ratio to use its content of flakey inorganics also very few, confirm physical strength step-down.In addition, in the comparative example 3 that the content of flakey inorganics is too much, confirm thixotropy index and excessively rise, and wettability is deteriorated, the side of the abundant contact semiconductor element 2 of composition epoxy resin 1 cannot be made.
Nomenclature
1: composition epoxy resin
2: semiconductor element
3: substrate
4: semiconductor device
Claims (3)
1. a semiconductor device, is characterized in that, is semiconductor device semiconductor element mounting formed to substrate, wherein,
By being aqueous composition epoxy resin under the part coating room temperature only around described semiconductor element and making it solidify, thus make described semiconductor element bonding with described substrate, and do not fill in the whole gap of described semiconductor element and described substrate
Described composition epoxy resin contains epoxy resin, solidifying agent and inorganic filling material,
As described inorganic filling material, be the flakey inorganics of 2 ~ 150 containing the mean aspect ratio being 0.1 ~ 30 quality % relative to the total amount of described composition epoxy resin, and the thixotropy index of described composition epoxy resin is 3.0 ~ 8.0.
2. semiconductor device according to claim 1, is characterized in that,
Described inorganic filling material is the material being selected from mica and talcum.
3. semiconductor device according to claim 1 and 2, is characterized in that,
Described inorganic filling material has carried out surface treatment by silane coupling agent.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010-145399 | 2010-06-25 | ||
| JP2010145399A JP5161924B2 (en) | 2010-06-25 | 2010-06-25 | Semiconductor device |
| PCT/JP2011/061511 WO2011162055A1 (en) | 2010-06-25 | 2011-05-19 | Epoxy resin composition and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102959006A CN102959006A (en) | 2013-03-06 |
| CN102959006B true CN102959006B (en) | 2015-02-25 |
Family
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| CN201180031200.8A Active CN102959006B (en) | 2010-06-25 | 2011-05-19 | Epoxy resin composition and semiconductor device |
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| JP (1) | JP5161924B2 (en) |
| CN (1) | CN102959006B (en) |
| WO (1) | WO2011162055A1 (en) |
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| JP5237328B2 (en) * | 2010-05-26 | 2013-07-17 | パナソニック株式会社 | Liquid epoxy resin composition for reinforcing secondary mounting of FBGA package and FBGA package |
| JP2016037529A (en) * | 2014-08-06 | 2016-03-22 | 信越化学工業株式会社 | Liquid epoxy resin composition and heat sink, and adhesive for stiffener |
| JP2017105883A (en) * | 2015-12-07 | 2017-06-15 | 信越化学工業株式会社 | Liquid resin composition, die attach method using the composition, and semiconductor device having cured product of the composition |
| WO2017204012A1 (en) * | 2016-05-27 | 2017-11-30 | オリンパス株式会社 | Adhesive composition, ultrasonic transducer, endoscopic device, and ultrasonic endoscopic device |
| JP6838941B2 (en) * | 2016-05-27 | 2021-03-03 | オリンパス株式会社 | Ultrasonic oscillator and ultrasonic endoscope device |
| CN112004887A (en) * | 2018-04-20 | 2020-11-27 | 富士胶片株式会社 | Heat conductive layer, photosensitive composition, method for producing heat conductive layer, laminate, and semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01172899A (en) * | 1987-12-28 | 1989-07-07 | Yokohama Rubber Co Ltd:The | Damping material |
| JP3966686B2 (en) * | 2000-11-30 | 2007-08-29 | ソニーケミカル＆インフォメーションデバイス株式会社 | Connecting material |
| JP3804464B2 (en) * | 2001-03-27 | 2006-08-02 | 松下電工株式会社 | Resin composition for forming semiconductor sealing frame and method for forming semiconductor sealing frame |
| JP4265174B2 (en) * | 2002-08-27 | 2009-05-20 | パナソニック電工株式会社 | Liquid sealing material and semiconductor device |
| JP3740116B2 (en) * | 2002-11-11 | 2006-02-01 | 三菱電機株式会社 | Molded resin encapsulated power semiconductor device and manufacturing method thereof |
| JP2004269616A (en) * | 2003-03-06 | 2004-09-30 | Sumitomo Bakelite Co Ltd | Resin composition and cover lay for flexible printed wiring board using the same |
| JP2004307701A (en) * | 2003-04-09 | 2004-11-04 | Shin Etsu Chem Co Ltd | Highly thixotropic ultraviolet curable resin composition |
| JP4529534B2 (en) * | 2004-04-28 | 2010-08-25 | 東レ株式会社 | Thermosetting resin composition for fiber reinforced composite materials |
| JP2006066814A (en) * | 2004-08-30 | 2006-03-09 | Kyocera Chemical Corp | Electronic component |
| JP4231874B2 (en) * | 2005-02-14 | 2009-03-04 | 双葉電子工業株式会社 | IC chip coating material for fluorescent display tube and fluorescent display tube |
| JP4858672B2 (en) * | 2005-04-28 | 2012-01-18 | 信越化学工業株式会社 | Manufacturing method of sealing material for COB mounting |
| TWI444406B (en) * | 2006-01-12 | 2014-07-11 | Nippon Steel & Sumikin Chem Co | An aromatic ether type polymer, a method for producing the same, and a polymer composition |
| JP4934334B2 (en) * | 2006-03-20 | 2012-05-16 | 三菱樹脂株式会社 | Double-sided copper-clad board |
| JP5217143B2 (en) * | 2006-10-10 | 2013-06-19 | 信越化学工業株式会社 | Thixotropic sealing material and lead wire exposure prevention method |
| JP2008177521A (en) * | 2006-12-22 | 2008-07-31 | Shin Etsu Chem Co Ltd | Sealing material for mounting and semiconductor device |
| JP4780041B2 (en) * | 2007-06-07 | 2011-09-28 | 住友ベークライト株式会社 | Resin paste for semiconductor and semiconductor device |
| JP2009046565A (en) * | 2007-08-18 | 2009-03-05 | Konica Minolta Medical & Graphic Inc | Curable composition |
| KR101202226B1 (en) * | 2008-03-07 | 2012-11-16 | 아사히 유키자이 고교 가부시키가이샤 | Heat-curable resin composition, fiber-reinforced molding material and molded article |
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2010
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- 2011-05-19 CN CN201180031200.8A patent/CN102959006B/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2011162055A1 (en) | 2011-12-29 |
| JP5161924B2 (en) | 2013-03-13 |
| JP2012007106A (en) | 2012-01-12 |
| CN102959006A (en) | 2013-03-06 |
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