CN102956778A - InP (indium phosphide)-based light emitting diode with interface texturing layer and manufacturing method of InP-based light emitting diode with interface texturing layer - Google Patents
InP (indium phosphide)-based light emitting diode with interface texturing layer and manufacturing method of InP-based light emitting diode with interface texturing layer Download PDFInfo
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- CN102956778A CN102956778A CN2012104187732A CN201210418773A CN102956778A CN 102956778 A CN102956778 A CN 102956778A CN 2012104187732 A CN2012104187732 A CN 2012104187732A CN 201210418773 A CN201210418773 A CN 201210418773A CN 102956778 A CN102956778 A CN 102956778A
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Abstract
The invention discloses a light emitting diode, which comprises a P-InP substrate, wherein a p-InP buffer layer, a Bragg reflective layer, a p-type coating layer, an active layer, a n-type coating layer, a current stretching layer and an ohmic contact layer sequentially and epitaxially grow on the P-InP substrate, the interface texturing layer is arranged between the current stretching layer and the ohmic contact layer, the interface texturing layer is n-(Al<x>Ga<1-x>)<y>In<1-y>P, x is 0.2 to 0.3, y is 0.35 to 0.45, the doping concentration of the interface texturing layer is 5*10<20> to 1*10<21>, and the epitaxial thickness of the interface texturing layer is 0.1 to 0.3mu.m. The light emitting diode has the advantages that the external quantum efficiency is high, and the brightness is high.
Description
Technical field
The present invention relates to a kind of light-emitting diode.
Background technology
Light-emitting diode (LED) is widely used as industrial and civilian display element, has used the red LED of AlInP as the LED of high brightness.In addition, as than redness more short wavelength's LED used InPP, GaP, but only obtain the LED of low-light level.In recent years owing to can by the crystallizing layer of organic metal vapor deposition (MOVPE) method growth AlGaInP system, therefore can produce the high-brightness LED of redness, yellow, green.
The AlGaInP light emitting diode construction reaches its maturity, but owing to many reasons, the external quantum efficiency of AlGaInP light-emitting diode is on the low side.For example, light-emitting diode of the prior art is to obtain by grow up the successively p-type GaP current-diffusion layer of N-shaped InP resilient coating, N-shaped AlGaInP coating layer, AlGaInP active layer, p-type AlGaInP coating layer, the Zn that mixed of MOVPE method on N-shaped InP substrate.Wherein because total reflection through epitaxial loayer the time, owing to refringence, occurs in most of light that active area emits.So that the light that many active areas send finally can't penetrate from epitaxial loayer.So, how to improve the external quantum efficiency of AlGaInP light-emitting diode, to improve its brightness, be the problem that those skilled in the art need solution badly.
Summary of the invention
In order to overcome defective of the prior art, the object of the invention is to provide a kind of external quantum efficiency high, the light-emitting diode that brightness is high.
Light-emitting diode of the present invention comprises:
The P-InP substrate,
Successively epitaxially grown p-InP resilient coating, Bragg reflecting layer, p-type coating layer, active layer, N-shaped coating layer, current extending and ohmic contact layer on P-InP;
Between current extending and ohmic contact layer, has interface suede layer; Wherein,
Interface suede layer is n-(Al
xGa
1-x)
yIn
1-yP, x are that 0.2～0.3, y is 0.35～0.45;
The doping content of interface suede layer is 5 * 10
20～1 * 10
21
The epitaxial thickness of interface suede layer is 0.1～0.3 micron.
In a preferred embodiment:
Bragg reflecting layer is p-AlInP/p-(AlxGa1-x) yIn1-yP, and x is that 0.3～0.7, y is 0.4～0.6;
The p-type coating layer is p-(AlxGa1-x) yIn1-yP, and x is that 0.6～1, y is 0.4～0.6;
Active layer is (AlxGa1-x) yIn1-yP that do not mix, and x is that 0～0.5, y is 0.4～0.6;
The N-shaped coating layer is n-(AlxGa1-x) yIn1-yP, and x is that 0.6～1, y is 0.4～0.6.
Described current extending is n-(AlxGa1-x) yIn1-yP, and wherein x is that 0～1, y is 0.45～0.55.
The manufacture method of light-emitting diode of the present invention comprises the steps:
(1), under 300 ℃-500 ℃ temperature, the P-InP substrate is carried out surface treatment, remove aqueous vapor.
(2), growth p-InP resilient coating.
(3), growth Bragg reflecting layer p-AlInP/p-(AlxGa1-x) yIn1-yP, wherein x is that 0.3～0.7, y is 0.4～0.6;
(4), the growing p-type coating layer, p-(AlxGa1-x) yIn1-yP, wherein x is that 0.6～1, y is 0.4～0.6;
(5), the growth active layer, (AlxGa1-x) yIn1-yP that mixes, wherein, x is that 0～0.5, y is 0.4～0.6;
(6), the growing n-type coating layer, n-(AlxGa1-x) yIn1-yP, wherein x is that 0.6～1, y is 0.4～0.6;
(7), form current extending, n-(AlxGa1-x) yIn1-yP, wherein x is that 0～1, y is 0.45～0.55, the doping content of current extending is 1 * 10
20～1 * 10
21, thickness is 3000～5000nm;
(8), growth interface suede layer: epitaxial growth boundary layer n-(Al at first
xGa
1-x)
yIn
1-yP, x are that 0.2～0.3, y is 0.35～0.45; , then through etching boundary layer surface suede being changed into and be interface suede layer, etching solution is the mixed liquor of hydrofluoric acid and methyl alcohol;
The doping content of interface suede layer 8 is preferably 1 * 10
20～5 * 10
21, more preferably 5 * 10
20～1 * 10
21The epitaxial thickness of interface suede layer 8 is preferably 0.1～0.3 micron, more preferably 0.15～0.2 micron.
(9), growth ohmic contact layer 9.
Description of drawings
Fig. 1 is the structural representation of light-emitting diode of the present invention.
Embodiment
In order to make those skilled in the art more clearly understand structure and the manufacture method thereof of light-emitting diode of the present invention, describe its embodiment below in conjunction with accompanying drawing, but be not intended to limit the present invention.
As shown in Figure 1, light-emitting diode of the present invention epitaxial structure on P-InP substrate 1 is followed successively by p-InP resilient coating 2, Bragg reflecting layer 3, p-type coating layer 4, active layer 5, N-shaped coating layer 6, current extending 7, interface suede layer 8 and n-InP ohmic contact layer 9 from the bottom to top, wherein
Interface suede layer 8 is n-(Al
xGa
1-x)
yIn
1-yP, x are that 0.2～0.3, y is 0.35～0.45; The doping content of interface suede layer 8 is preferably 1 * 10
20～5 * 10
21, more preferably 5 * 10
20～1 * 10
21The epitaxial thickness of interface suede layer 8 is preferably 0.1～0.3 micron, more preferably 0.15～0.2 micron.
Bragg reflecting layer 3 is p-AlInP/p-(AlxGa1-x) yIn1-yP, and x is that 0.3～0.7, y is 0.4～0.6.
P-type coating layer 4 is p-(AlxGa1-x) yIn1-yP, and x is that 0.6～1, y is 0.4～0.6;
Active layer 5 is (AlxGa1-x) yIn1-yP that do not mix, and x is that 0～0.5, y is 0.4～0.6;
N-shaped coating layer 6 is n-(AlxGa1-x) yIn1-yP, and x is that 0.6～1, y is 0.4～0.6.
Described current extending 7 is n-(AlxGa1-x) yIn1-yP, and wherein x is that 0～1, y is 0.45～0.55.
The concrete growth step of light-emitting diode of the present invention is as follows, wherein all adopts metal organic chemical vapor deposition (MOCVD) technology to carry out epitaxial growth:
1, under 300 ℃-500 ℃ temperature, P-InP substrate 1 is carried out surface treatment, remove aqueous vapor.
2, growth p-InP resilient coating 2.
3, growth Bragg reflecting layer 3 is used for reflecting the light that active area penetrates, in order to avoid thoroughly absorbed by InP.
Bragg reflecting layer is p-AlInP/p-(AlxGa1-x) yIn1-yP, and the x value is that 0.3～0.7, y value is 0.4～0.6.
4, the growing p-type coating layer 4, p-(AlxGa1-x) yIn1-yP (wherein the x value is that 0.6～1, y value is 0.4～0.6).Purpose is limiting carrier, increases recombination probability.
5, growth active layer 5, (AlxGa1-x) yIn1-yP does not mix.Wherein, x is that 0～0.5, y is 0.4～0.6.
6, the growing n-type coating layer 6, n-(AlxGa1-x) yIn1-yP (wherein the x value is that 0.6～1, y value is 0.4～0.6).Act on identically with coating layer 3, be limiting carrier, increase recombination probability.
7, form current extending 7.Its effect is better extend current, makes CURRENT DISTRIBUTION even, improves the uniformity of light-emitting diode parameters.Current extending is n-(AlxGa1-x) yIn1-yP.Wherein, the Al component x=0-1 of n-(AlxGa1-x) yIn1-yP material, the y value is 0.45～0.55.The doping content of current extending is 1 * 10
20～1 * 10
21The epitaxial thickness of current extending is 3000～5000nm.
8, growth interface suede layer 8.Its concrete steps are epitaxial growth boundary layers at first, then make epitaxial interface surface suede through etching, and etching solution is the mixed liquor of hydrofluoric acid and methyl alcohol.Etching solution also can be the mixed liquor of nitric acid and methyl alcohol, but (the Al that uses the mixed liquor etching of hydrofluoric acid and methyl alcohol to obtain
xGa
1-x)
yIn
1-yP suede face is more even, the brightness that more is conducive to improve light-emitting diode.
Interface suede layer 8 is n-(Al
xGa
1-x)
yIn
1-yP, x are that 0.2～0.3, y is 0.35～0.45; The doping content of interface suede layer 8 is preferably 1 * 10
20～5 * 10
21, more preferably 5 * 10
20～1 * 10
21The epitaxial thickness of interface suede layer 8 is preferably 0.1～0.3 micron, more preferably 0.15～0.2 micron.If doping content is too high or too low, all can cause the current expansion ability of current extending to descend.Thickness is too thick, can reduce light extraction efficiency, and thickness is too thin, then can not improve the external quantum efficiency of light-emitting diode.
The brightness that the growth of interface suede layer has obviously improved light-emitting diode of the present invention, its reason is the external quantum efficiency that interface suede layer has obviously improved light-emitting diode after by suede after deliberation, so that light intensity increases substantially.
9, growth ohmic contact layer 9.
Light-emitting diode of the present invention has following beneficial effect:
At first, the present invention has increased by a bed boundary suede layer in conventional LED structure, the suede layer can increase effective lighting area of LED device, and the light that can make original generation total reflection and can't penetrate, next time with different angles directive interface, these light are extracted from epitaxial loayer again, greatly improved the external quantum efficiency of AlGaInP light-emitting diode, to improve brightness.
Secondly, because the p-type material carrier mobility is lower, the present invention adopts the N-shaped material as current extending, has improved the current expansion ability of current extending.If adopt traditional N-shaped substrate, adopt again the N-shaped current extending, the tunnel junctions extension that connects substrate and p-type epitaxial loayer is comparatively complicated, and the extension difficulty is also larger, is difficult for realizing.The present invention adopts P-InP as substrate, replaces traditional N-InP substrate, has simplified epitaxial step, has improved production efficiency.
Certainly; the present invention also can have other various embodiments; in the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (10)
1. light-emitting diode comprises:
The P-InP substrate,
Successively epitaxially grown p-InP resilient coating, Bragg reflecting layer, p-type coating layer, active layer, N-shaped coating layer, current extending and ohmic contact layer on P-InP; It is characterized in that,
Between current extending and ohmic contact layer, has interface suede layer; Wherein,
Interface suede layer is n-(Al
xGa
1-x)
yIn
1-yP, wherein x is that 0.2～0.3, y is 0.35～0.45;
The doping content of interface suede layer is 1 * 10
20～5 * 10
21, the epitaxial thickness of interface suede layer is preferably 0.1～0.3 micron.
2. light-emitting diode as claimed in claim 1 is characterized in that,
The doping content of interface suede layer is 5 * 10
20～1 * 10
21The epitaxial thickness of interface suede layer is 0.15～0.2 micron.
3. light-emitting diode as claimed in claim 1 or 2 is characterized in that,
Bragg reflecting layer p-AlInP/p-(AlxGa1-x) yIn1-yP, x are that 0.3～0.7, y is 0.4～0.6.
4. light-emitting diode as claimed in claim 1 or 2 is characterized in that,
The p-type coating layer is p-(AlxGa1-x) yIn1-yP, and x is that 0.6～1, y is 0.4～0.6.
5. light-emitting diode as claimed in claim 1 or 2 is characterized in that,
Active layer is (AlxGa1-x) yIn1-yP that do not mix, and x is that 0～0.5, y is 0.4～0.6;
6. light-emitting diode as claimed in claim 1 or 2 is characterized in that,
The N-shaped coating layer is n-(AlxGa1-x) yIn1-yP, and x is that 0.6～1, y is 0.4～0.6.
7. light-emitting diode as claimed in claim 1 or 2 is characterized in that,
Described current extending is n-(AlxGa1-x) yIn1-yP, and wherein x is that 0～1, y is 0.45～0.55.
8. the manufacture method of a light-emitting diode is characterized in that, comprises the steps:
(1), under 300 ℃-500 ℃ temperature, the P-InP substrate is carried out surface treatment, remove aqueous vapor.
(2), growth p-InP resilient coating.
(3), growth Bragg reflecting layer p-AlInP/p-(AlxGa1-x) yIn1-yP, x is that 0.3～0.7, y is 0.4～0.6;
(4), growing p-type coating layer p-(AlxGa1-x) yIn1-yP, wherein x is that 0.6～1, y is 0.4～0.6;
(5), growth active layer (AlxGa1-x) yIn1-yP that do not mix, wherein, x is that 0～0.5, y is 0.4～0.6;
(6), growing n-type coating layer n-(AlxGa1-x) yIn1-yP, wherein x is that 0.6～1, y is 0.4～0.6;
(7), form current extending, n-(AlxGa1-x) yIn1-yP, wherein x is that 0～1, y is 0.45～0.55, the doping content of current extending is 1 * 10
20～1 * 10
21, thickness is 3000～5000nm;
(8), growth interface suede layer: epitaxial growth boundary layer n-(Al at first
xGa
1-x)
yIn
1-yP, x are that 0.2～0.3, y is 0.35～0.45; Then through etching boundary layer surface suede is changed into and be interface suede layer, etching solution is the mixed liquor of hydrofluoric acid and methyl alcohol;
(9), growth ohmic contact layer 9.
9. the manufacture method of light-emitting diode as claimed in claim 8 is characterized in that,
The doping content of interface suede layer is 1 * 10
20～5 * 10
21The epitaxial thickness of interface suede layer is 0.1～0.3 micron.
10. the manufacture method of light-emitting diode as claimed in claim 8 or 9 is characterized in that,
The doping content of interface suede layer 8 is 5 * 10
20～1 * 10
21, the epitaxial thickness of interface suede layer is 0.15～0.2 micron.
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| CN2012104187732A CN102956778A (en) | 2012-10-26 | 2012-10-26 | InP (indium phosphide)-based light emitting diode with interface texturing layer and manufacturing method of InP-based light emitting diode with interface texturing layer |
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| CN2012104187732A CN102956778A (en) | 2012-10-26 | 2012-10-26 | InP (indium phosphide)-based light emitting diode with interface texturing layer and manufacturing method of InP-based light emitting diode with interface texturing layer |
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| US20070108457A1 (en) * | 2004-09-27 | 2007-05-17 | Mu-Jen Lai | GaN-series light emitting diode with high light efficiency and the manufacturing method |
| CN101604726A (en) * | 2009-07-07 | 2009-12-16 | 扬州汉光光电有限公司 | A kind of light-emitting diode that adopts P type substrate |
| CN101714600A (en) * | 2009-11-16 | 2010-05-26 | 厦门市三安光电科技有限公司 | Inversed AlGaInP based light-emitting diode and manufacturing method thereof |
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2012
- 2012-10-26 CN CN2012104187732A patent/CN102956778A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005015648A1 (en) * | 2003-08-12 | 2005-02-17 | Epivalley Co., Ltd. | Method of forming grating on substrate and iii-nitride semiconductor light emitting device using the substrate |
| US20070108457A1 (en) * | 2004-09-27 | 2007-05-17 | Mu-Jen Lai | GaN-series light emitting diode with high light efficiency and the manufacturing method |
| CN101604726A (en) * | 2009-07-07 | 2009-12-16 | 扬州汉光光电有限公司 | A kind of light-emitting diode that adopts P type substrate |
| CN101714600A (en) * | 2009-11-16 | 2010-05-26 | 厦门市三安光电科技有限公司 | Inversed AlGaInP based light-emitting diode and manufacturing method thereof |
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Application publication date: 20130306 |