CN101540359A - Epitaxial wafer of AlGaInP light emitting diode with sapphire underlay and preparation method thereof - Google Patents
Epitaxial wafer of AlGaInP light emitting diode with sapphire underlay and preparation method thereof Download PDFInfo
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- CN101540359A CN101540359A CN200910020390A CN200910020390A CN101540359A CN 101540359 A CN101540359 A CN 101540359A CN 200910020390 A CN200910020390 A CN 200910020390A CN 200910020390 A CN200910020390 A CN 200910020390A CN 101540359 A CN101540359 A CN 101540359A
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Abstract
The invention provides an epitaxial wafer of an AlGaInP light emitting diode with a sapphire underlay and a preparation method thereof. An epitaxial structure of the light emitting diode sequentically comprises the sapphire underlay, a low-temperature GaP buffer layer, a high-temperature GaP buffer layer, a GaP current expansion and ohmic contact layer, an AlGaInP transition layer, a lower limiting layer, a multiple quantum well AlGaInP active area, an AlGaInP upper limiting layer and a GaP current expansion layer from bottom to top. The preparation method comprises the steps that each epitaxial layer grows on the sapphire underlay layer by layer sequentially. The epitaxial wafer uses the sapphire as the epitaxial growth underlay and uses gallium phosphide as the buffer layer. Because the sapphire and the gallium phosphide material are transparent to a wave band from yellow to red, the problem of light absorption of the underlay does not exist. The gallium phosphide buffer layer can inhibit the material growth defect caused by lattice mismatch and heat expansion coefficient mismatch between the sapphire underlay and the AlGaInP material so as to greatly improve the light output capability of the light emitting diode.
Description
Technical field
(light emitting diode LED) and preparation method thereof, belongs to the photoelectron technology field to the present invention relates to a kind of AlGaInP (AlGaInP) light-emitting diode of Sapphire Substrate.
Background technology
The light-emitting diode of different colours (LED) is to be prepared by different material systems, and for yellow, orange, red LED, the best AlGaInP material that utilizes of performance prepares as luminescent layer now.AlGaInP LED grows on GaAs (GaAs) substrate, and its epitaxial material structure is followed successively by GaAs substrate, GaAs resilient coating, n type AlGaInP [(Al from the bottom to top
xGa
1-x)
0.5In
0.5P] lower limit layer, non-doping AlGaInP [(Al
xGa
1-x)
0.5In
0.5P/ (Al
yGa
1-y)
0.5In
0.5P] (x ≠ y) luminous zone (also being active area), p type AlGaInP [(Al
xGa
1-x)
0.5In
0.5P] upper limiting layer and p type GaP (gallium phosphide) current extending.Its preparation process is as follows:
1. epitaxial growth one deck GaAs resilient coating on the GaAs substrate;
2. the growth and n type the AlGaInP [(Al of GaAs lattice match on the GaAs resilient coating
xGa
1-x)
0.5In
0.5P] lower limit layer;
On lower limit layer the growth non-doping AlGaInP [(Al
xGa
1-x)
0.5In
0.5P/ (Al
yGa
1-y)
0.5In
0.5P] (x ≠ y) luminous zone (also being active area);
4. growing p-type AlGaInP [(Al on the luminous zone
xGa
1-x)
0.5In
0.5P] upper limiting layer;
5. the top layer that growing p-type GaP has current expansion and ohmic contact function on upper limiting layer.
Owing to the GaAs substrate visible light is absorbed in the said structure, the light of the downward propagation that the luminous zone produces all is absorbed, thereby luminous efficiency is very low, usually less than 10lm/W.Be to suppress the problems referred to above, the common way of industry is to increase the so-called Bragg reflecting layer (DBR reflector) that the light that transmits can be reflexed to upper surface downwards between GaAs resilient coating and lower limit layer, and it is generally by the gallium aluminium arsenic [Al of different components
xGa
1-xAs/Al
yGa
1-yAs (x ≠ y)] or AlGaInP [(Al
xGa
1-x)
0.5In
0.5P/ (Al
yGa
1-y)
0.5In
0.5P (x ≠ y)] material preparation.By utilizing Bragg reflecting layer (DBR reflector) structure, AlGaInP LED (AlGaInP light-emitting diode) luminous efficiency has been brought up to 15 ~ 20lm/W.
But Bragg reflecting layer (DBR reflector) structure can only reflect the light in the special angle scope, and for further improving the AlGaInP light-emitting diode performance of growing on the GaAs substrate, industry has also adopted the so-called inverted structure LED technology of changing substrate.It at first is to grow the AlGaInP LED epitaxial material on the GaAs substrate, then its P face is bonded on the high heat conductance substrate of being with metallic mirror (being generally Si), with the selective etching method GaAs substrate etching is fallen then, make to go up n electrode and p electrode again, form the n electrode last, p electrode under inverted structure LED.Utilize the LED performance of this technology preparation to have increased significantly, its luminous efficiency can reach 30lm/W.But this method complex process, the product index consistency is bad, and the chemical waste fluid needs that corrosion induced contains arsenic (As) in a large number further handle, and is unfavorable to environmental protection.
Because sapphire (Al
2O
3) substrate is transparent, visible light had not absorbability, Billy has higher extraction efficiency with the epitaxially grown AlGaInP light-emitting diode of gallium arsenide substrate, and can avoid changing the complicated technology and the problem of environmental pollution of extinction substrate, has tangible performance advantage and environment-friendly advantage.But the maximum difficult point of preparation AlGaInP light-emitting diode is the two lattice types difference on the Sapphire Substrate, the lattice constant difference is big, thermal coefficient of expansion also has a great difference, so industry does not still have the product appearance of the Sapphire Substrate utilized growth AlGaInP light-emitting diode.
Summary of the invention
The present invention is directed to the low problem of luminous efficiency that existing AlGaInP light-emitting diode exists, AlGaInP LED epitaxial slice of the high Sapphire Substrate of a kind of luminous efficiency and preparation method thereof is provided.
The AlGaInP LED epitaxial slice of Sapphire Substrate of the present invention, its epitaxial structure are followed successively by Sapphire Substrate, low temperature GaP resilient coating, high temperature GaP resilient coating, GaP current expansion and ohmic contact layer, AlGaInP transition and lower limit layer, Multiple Quantum Well AlGaInP active area, AlGaInP upper limiting layer and GaP current extending from the bottom to top.
The preparation method of the AlGaInP LED epitaxial slice of above-mentioned Sapphire Substrate may further comprise the steps:
(1) Sapphire Substrate heat treatment: Sapphire Substrate is put in MOCVD (metal organic chemical vapor deposition equipment) growth room hydrogen (H
2) be warmed up to 700 ± 50 ℃ under the atmosphere and handled 5 minutes ~ 20 minutes;
(2) low temperature GaP buffer growth: the temperature in the MOCVD equipment growth room is reduced to 550 ± 50 ℃, feeds trimethyl gallium (TMGa) and phosphine (PH then
3), growth thickness is the low temperature GaP resilient coating of 15nm-25nm, after stopping growing, temperature is drawn high 720 ± 50 ℃ of annealing 3 minutes ~ 15 minutes;
(3) high temperature GaP buffer growth: under 720 ± 20 ℃ in MOCVD equipment growth room, utilize trimethyl gallium (TMGa) and phosphine (PH
3) growth thickness is the high temperature GaP resilient coating of 0.3um ~ 1um on low temperature GaP resilient coating;
(4) GaP current expansion and ohmic contact layer growth: under 720 ± 20 ℃ in MOCVD equipment growth room, utilize trimethyl gallium (TMGa) and phosphine (PH
3) on high temperature GaP resilient coating, grow 2um ~ 5um thick GaP current expansion and ohmic contact layer;
(5) AlGaInP transition and lower limit layer growth: under 720 ± 20 ℃ in MOCVD equipment growth room, utilize trimethyl gallium (TMGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and phosphine (PH
3) growth thickness is the (Al of 0.5um ~ 1.0um on GaP current expansion and ohmic contact layer
xGa
1-x)
yIn
1-yP transition and lower limit layer, 0≤x wherein, y≤1;
(6) AlGaInP active area growth: utilize trimethyl gallium (TMGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and phosphine (PH under 720 ± 20 ℃ in MOCVD equipment growth room
3) Multiple Quantum Well of on AlGaInP transition and lower limit layer, growing (MQWs) AlGaInP active area, the trap of AlGaInP active area is built and is consisted of: trap (Al
xGa
1-x) InP/ builds (Al
yGa
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0;
(7) AlGaInP upper limiting layer growth: utilize trimethyl gallium (TMGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and phosphine (PH under 720 ± 20 ℃ in MOCVD equipment growth room
3) growth thickness is the (Al of 0.5um ~ 1.0um on the AlGaInP active area
xGa
1-x)
yIn
1-yThe P upper limiting layer, 0≤x wherein, y≤1;
(8) GaP current expansion layer growth: utilize trimethyl gallium (TMGa) and phosphine (PH under 720 ± 20 ° in MOCVD equipment growth room
3) growth thickness is the GaP current extending of 4um ~ 15um on the AlGaInP upper limiting layer.
The present invention uses sapphire as epitaxial growth substrate, and use gallium phosphide as resilient coating, because sapphire and gallium phosphide material are transparent to yellow to red wave band, therefore there is not the substrate raise problems in terms of light absorption, the material growth defect that lattice mismatch and coefficient of thermal expansion mismatch cause between Sapphire Substrate and the AlGaInP light LED material can be suppressed by the gallium phosphide resilient coating, thereby the light fan-out capability of LED can be improved greatly.In addition, preparation process does not relate to the corrosion of GaAs thick layer of material, can not produce to contain arsenic waste solution, has reduced problem of environmental pollution.
Description of drawings
Fig. 1 be the present invention first be the structural representation of embodiment.
Fig. 2 is that second of the present invention is the structural representation of embodiment.
Embodiment
Embodiment 1
As shown in Figure 1, the AlGaInP LED epitaxial slice of the Sapphire Substrate of present embodiment, be Sapphire Substrate, its epitaxial structure is followed successively by GaP resilient coating (comprising low temperature GaP resilient coating and the two-layer combination of high temperature GaP resilient coating), n type GaP current expansion and ohmic contact layer, the AlGaInP transition of n type and lower limit layer, Multiple Quantum Well (MQWs) AlGaInP active area, P type AlGaInP upper limiting layer and P type current extending from the bottom to top on Sapphire Substrate.Utilize conventional die preparation technology on P type current extending, to produce p side electrode (positive pole), on n type GaP current expansion and ohmic contact layer, produce N face electrode (negative pole), make p side electrode and N face electrode together up.
The preparation method of the AlGaInP LED epitaxial slice of above-mentioned Sapphire Substrate may further comprise the steps:
(1) Sapphire Substrate heat treatment: Sapphire Substrate is put in metal organic chemical vapor deposition (MOCVD) the equipment growth room hydrogen (H
2) be warmed up to 700 ± 50 ℃ under the atmosphere and handled 5 minutes ~ 20 minutes;
(2) low temperature GaP buffer growth: the temperature in the MOCVD equipment growth room is reduced to 550 ± 50 ℃, feeds trimethyl gallium (TMGa) and phosphine (PH then
3) growth thickness is low temperature phosphor gallium (GaP) resilient coating of 20 ± 5nm, after stopping growing, temperature drawn high 720 ± 50 ℃ of annealing 3 minutes ~ 15 minutes;
(3) high temperature GaP buffer growth: under 720 ± 20 ℃ in MOCVD equipment growth room, utilize trimethyl gallium (TMGa) and phosphine (PH
3) growth thickness is the GaP high temperature buffer layer of 0.3um ~ 1um on low temperature GaP resilient coating;
(4) n type GaP current expansion and ohmic contact layer growth: under 720 ± 20 ℃ in MOCVD equipment growth room, utilize trimethyl gallium (TMGa), two silane (Si
2H
6) and phosphine (PH
3) on high temperature GaP resilient coating, grow 2um ~ 5um thick n type GaP current expansion and ohmic contact layer;
(5) (AlGaInP) transition of n type AlGaInP and lower limit layer growth: utilize trimethyl gallium/trimethyl aluminium/trimethyl indium/couple silane/phosphine (TMGa/TMAl/TMIn/Si under 720 ± 20 ℃ in MOCVD equipment growth room
2H
6/ PH
3) growth thickness is the AlGaInP [(Al of 0.5um ~ 1.0um on n type gallium phosphide (GaP) current expansion and ohmic contact layer
xGa
1-x)
yIn
1-yP] transition and lower limit layer, 0≤x wherein, y≤1;
(6) AlGaInP active area growth: utilize trimethyl gallium, trimethyl aluminium, trimethyl indium and phosphine (TMGa/TMAl/TMIn/PH under 720 ± 20 ℃ in MOCVD equipment growth room
3) Multiple Quantum Well of on AlGaInP transition zone and lower limit layer, growing (MQWs) AlGaInP active area, the trap of AlGaInP active area is built and is consisted of: trap (Al
xGa
1-x) InP/ builds (Al
yGa
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0;
(7) P type AlGaInP upper limiting layer growth: utilize trimethyl gallium, trimethyl aluminium, trimethyl indium, two luxuriant magnesium and phosphine (TMGa/TMAl/TMIn/CP under 720 ± 20 ℃ in MOCVD equipment growth room
2Mg/PH
3) growth thickness is the P type (Al of 0.5um ~ 1.0um on the AlGaInP active area
xGa
1-x)
yIn
1-yThe P upper limiting layer, 0≤x wherein, y≤1;
(8) P type GaP current expansion layer growth: utilize trimethyl gallium, two luxuriant magnesium and phosphine (TMGa/CP under 720 ± 20 ° in MOCVD equipment growth room
2Mg/PH
3) growth thickness is the p type GaP current extending of 4um ~ 15um on the AlGaInP upper limiting layer.
Utilize N, P electrode in LED die preparation technology (metal evaporation, photoetching, the cutting etc.) making, and be packaged into the LED device through technologies such as bonding, routing, injecting glue, curing.
Embodiment 2
As shown in Figure 2, the AlGaInP LED epitaxial slice of the Sapphire Substrate of present embodiment, its epitaxial structure are to be followed successively by GaP resilient coating (comprising low temperature GaP resilient coating and the two-layer combination of high temperature GaP resilient coating), P type GaP current expansion and ohmic contact layer, the AlGaInP transition of P type and lower limit layer, Multiple Quantum Well (MQWs) AlGaInP active area, n type AlGaInP upper limiting layer, n type GaP current extending (Window layer) on Sapphire Substrate from the bottom to top.Utilize conventional die preparation technology on n type current extending, to produce N face electrode (negative pole), on P type GaP current expansion and ohmic contact layer, produce p side electrode (positive pole), make p side electrode and N face electrode together up.
The preparation method of the AlGaInP LED epitaxial slice of above-mentioned Sapphire Substrate may further comprise the steps:
(1) Sapphire Substrate heat treatment: Sapphire Substrate is put in metal organic chemical vapor deposition (MOCVD) the equipment growth room H
2Being warmed up to 700 ± 50 ℃ under the atmosphere handled 5 minutes ~ 20 minutes;
(2) low temperature GaP buffer growth: the temperature in the MOCVD equipment growth room is reduced to 550 ± 50 ℃, feeds TMGa and PH then
3Growth thickness is the low temperature GaP resilient coating of 20 ± 5nm, after stopping growing, temperature is drawn high 720 ± 50 ℃ of annealing 3 minutes ~ 15 minutes;
(3) high temperature GaP buffer growth: under 720 ± 20 ℃ in MOCVD equipment growth room, utilize trimethyl gallium and phosphine (TMGa and PH
3) growth thickness is the GaP high temperature buffer layer of 0.3um ~ 1um on low temperature GaP resilient coating;
(4) P type GaP current expansion and ohmic contact layer growth: under 720 ± 20 ℃ in MOCVD equipment growth room, utilize the luxuriant magnesium/phosphine (TMGa/CP of trimethyl gallium/two
2Mg/PH
3) on high temperature GaP resilient coating, grow 2um ~ 5um thick GaP current expansion and ohmic contact layer;
(5) P type AlGaInP transition and lower limit layer growth: utilize the luxuriant magnesium/phosphine (TMGa/TMAl/TMIn/CP of trimethyl gallium/trimethyl aluminium/trimethyl indium/two under 720 ± 20 ℃ in MOCVD equipment growth room
2Mg/PH
3) growth thickness is the (Al of 0.5um ~ 1.0um on N type GaP current expansion and ohmic contact layer
xGa
1-x)
yIn
1-yP transition and lower limit layer, 0≤x wherein, y≤1;
(6) AlGaInP active area growth: utilize trimethyl gallium/trimethyl aluminium/trimethyl indium/phosphine (TMGa/TMAl/TMIn/PH under 720 ± 20 ℃ in MOCVD equipment growth room
3) Multiple Quantum Well of on AlGaInP transition zone and lower limit layer, growing (MQWs) AlGaInP active area, the trap of AlGaInP active area is built and is consisted of: trap (Al
xGa
1-x) InP/ builds (Al
yGa
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0;
(7) n type AlGaInP upper limiting layer growth: utilize trimethyl gallium/trimethyl aluminium/trimethyl indium/couple silane/phosphine (TMGa/TMAl/TMIn/Si under 720 ± 20 ℃ in MOCVD equipment growth room
2H
6/ PH
3) growth thickness is the n type (Al of 0.5um ~ 1.0um on the AlGaInP active area
xGa
1-x)
yIn
1-yThe P upper limiting layer, 0≤x wherein, y≤1;
(8) n type GaP Window layer growth: utilize the luxuriant magnesium/phosphine (TMGa/CP of trimethyl gallium/two under 720 ± 20 ° in MOCVD equipment growth room
2Mg/PH
3) growth thickness is the n type GaP current extending of 4um ~ 15um on the AlGaInP upper limiting layer.
Utilize N, P electrode in LED die preparation technology (metal evaporation, photoetching, the cutting etc.) making, and be packaged into the LED device through technologies such as bonding, routing, injecting glue, curing.
Claims (2)
1. the AlGaInP LED epitaxial slice of a Sapphire Substrate, it is characterized in that: its epitaxial structure is followed successively by Sapphire Substrate, low temperature GaP resilient coating, high temperature GaP resilient coating, GaP current expansion and ohmic contact layer, AlGaInP transition and lower limit layer, Multiple Quantum Well AlGaInP active area, AlGaInP upper limiting layer and GaP current extending from the bottom to top.
2. the preparation method of the AlGaInP LED epitaxial slice of the described Sapphire Substrate of claim 1 may further comprise the steps:
(1) Sapphire Substrate heat treatment: Sapphire Substrate is put in the metal organic chemical vapor deposition equipment growth room H
2Being warmed up to 700 ± 50 ℃ under the atmosphere handled 5 minutes ~ 20 minutes;
(2) low temperature GaP buffer growth: the temperature in the metal organic chemical vapor deposition equipment growth room is reduced to 550 ± 50 ℃, feed trimethyl gallium and phosphine then, growth thickness is the low temperature GaP resilient coating of 15nm-25nm, after stopping growing, temperature is drawn high 720 ± 50 ℃ of annealing 3 minutes ~ 15 minutes;
(3) high temperature GaP buffer growth: under 720 ± 20 ℃ in metal organic chemical vapor deposition equipment growth room, utilize trimethyl gallium and phosphine growth thickness on low temperature GaP resilient coating to be the GaP high temperature buffer layer of 0.3um ~ 1um;
(4) GaP current expansion and ohmic contact layer growth: under 720 ± 20 ℃ in metal organic chemical vapor deposition equipment growth room, utilize TMGa and PH
3On high temperature GaP resilient coating, grow 2um ~ 5um thick GaP current expansion and ohmic contact layer;
(5) AlGaInP transition and lower limit layer growth: under 720 ± 20 ℃ in metal organic chemical vapor deposition equipment growth room, utilize trimethyl gallium, trimethyl aluminium, trimethyl indium and phosphine growth thickness on GaP current expansion and ohmic contact layer to be the (Al of 0.5um ~ 1.0um
xGa
1-x)
yIn
1-yP transition and lower limit layer, 0≤x wherein, y≤1;
(6) AlGaInP active area growth: utilize trimethyl gallium, trimethyl aluminium, trimethyl indium and the phosphine Multiple Quantum Well AlGaInP active area of grow on AlGaInP transition zone and lower limit layer under 720 ± 20 ℃ in metal organic chemical vapor deposition equipment growth room, the trap base of AlGaInP active area consists of: trap (Al
xGa
1-x) InP/ builds (Al
yGa
1-y) InP, wherein 0≤x≤0.4,0.5≤y≤1.0;
(7) AlGaInP upper limiting layer growth: utilize trimethyl gallium, trimethyl aluminium, trimethyl indium and phosphine growth thickness on the AlGaInP active area to be the (Al of 0.5um ~ 1.0um under 720 ± 20 ℃ in metal organic chemical vapor deposition equipment growth room
xGa
1-x)
yIn
1-yThe P upper limiting layer, 0≤x wherein, y≤1;
(8) GaP current expansion layer growth: utilize trimethyl gallium and phosphine growth thickness on the AlGaInP upper limiting layer to be the GaP current extending of 4um ~ 15um under 720 ± 20 ° in metal organic chemical vapor deposition equipment growth room.
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| CN114038960A (en) * | 2021-09-09 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Micro light emitting diode epitaxial structure, manufacturing method thereof and micro light emitting diode |
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