CN100533791C - Light emitting diode and manufacturing method therefor - Google Patents
Light emitting diode and manufacturing method therefor Download PDFInfo
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- CN100533791C CN100533791C CNB2007100849418A CN200710084941A CN100533791C CN 100533791 C CN100533791 C CN 100533791C CN B2007100849418 A CNB2007100849418 A CN B2007100849418A CN 200710084941 A CN200710084941 A CN 200710084941A CN 100533791 C CN100533791 C CN 100533791C
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Abstract
The invention relates to light-emitting diode and manufacturing method thereof. The light-emitting diode includes: p-type GaP substrate (12); p-type GaP contact layer (13) laminated on the p-type GaP substrate (12); p-type AlInP second cladding (14); p-type AlGaInP active layer (15); n-type AlInP first cladding (16); n-type AlGaAs current diffusion layer (17). The sides of the P-type GaP substrate (12) are all processed for roughing by cutting blade. The light-emitting diode has high brightness, and can be roughed in any case independent of material and surface position, and can avoid bad characteristic generation.
Description
Technical field
The present invention relates to be widely used in the light-emitting diode and the manufacture method thereof of for example illumination, display unit, back light etc., specifically relate to have the high briliancy light-emitting diode and the manufacture method thereof of hyaline layer etc.
Background technology
Light-emitting diode has various types, its as can carry out luminous visible light display element or ultraviolet ray with wide light emitting region, infrared light-emitting component is used.In addition, in recent years light-emitting diode utilize field expansion rapidly, its instead the light source of fluorescent lamp or the backlight of display etc. just receiving publicity, need that briliancy is higher, the requirement of the better light-emitting diode of luminous efficiency increases.
For such requirement, implemented before this light-emitting diode luminescent layer design optimization or light-emitting diode is appended the method in reflector etc.
Recently also taked substrate with light-emitting diode adopt transparency carrier or with the crystal plane of light-emitting diode be processed into trachytic, the light that improves light-emitting diode takes out efficient and seeks the method for high briliancyization.
In said method,, be widely used method therefore because the asperities ratio of crystal plane is easier to implement.
Fig. 7 represents the ideograph of existing light-emitting diode structure.
Above-mentioned light-emitting diode has: p type GaP substrate 32; Be formed at the p type AlInP covering 34 on this p type GaP substrate 32; P type AlGaInP active layer 35; N type AlInP covering 36; Transparency electrode is with n type contact layer 37 and transparency electrode 39 (for example opening flat 04-354382 communique referring to the spy of Japan).
Above-mentioned p type GaP substrate 32 has permeability for the emergent light of p type AlGaInP active layer 35.That is, form the light transmission p type GaP substrate 32 that penetrates from above-mentioned p type AlGaInP active layer 35.
Below, above-mentioned manufacturing method for LED is described.
At first, make wafer, this wafer comprises: above-mentioned p type GaP substrate 32; P type AlInP covering 34; P type AlGaInP active layer 35; N type AlInP covering 36; Transparency electrode n type contact layer 37 and transparency electrode 39.
Then, on a side's of above-mentioned wafer surface, form p side chip join, on wafer the opposing party's surface, form the n side line and engage with pad electrode 38 with electrode 31, and by ruling or severing and wafer is divided into a plurality of chips.
At last, after using chemical treatment that asperitiesization carry out in the side (by cutting apart the surface that wafer obtains) of said chip, finish light-emitting diode.Wherein, above-mentioned chemical treatment uses hydrochloric acid etc. to carry out.
The light-emitting diode of making like this clips the double-heterostructure of active layer 35 owing to adopt with covering 34,36, so can improve the luminous efficiency of active layer 35.
In addition, because above-mentioned p type GaP substrate 32 has permeability for the emergent light of active layer 35, so can light be taken out from GaP substrate 32.
And then, owing to implemented the asperities processing for the side of above-mentioned light-emitting diode, so can light be taken out from the side of light-emitting diode.
In addition, as other existing light-emitting diodes, also useful chemical treatment with side and end face carry out asperitiesization structure (for example referring to the spy of Japan open the 2004-356279 communique, the spy of Japan opens the 2005-327979 communique and the spy of Japan opens the 2003-209283 communique).
Figure 14 represents the ideograph of above-mentioned other existing light-emitting diode structure.
As shown in figure 14, this light-emitting diode comprises: p type GaP substrate 232; Be formed at p type AlInP second covering 234 under this p type GaP substrate 232; P type AlGaInP active layer 35; N type AlInP first covering 236; N type AlGaAs current-diffusion layer 237.The surface of upside is the end face of light-emitting diode among the figure of this p type GaP substrate 232.
In addition, in Figure 14, the 231st, the p side line engages and uses pad electrode, and the 238th, n side chip join electrode.
But, with the processing of the side asperitiesization of above-mentioned existing light-emitting diode or with the side of above-mentioned other existing light-emitting diodes and the processing of end face asperitiesization is chemical treatment, and the etch-rate that this chemical treatment has utilized crystallization is according to the different and different phenomenon in face orientation or utilize and make the coarse hyperergic medicine of etching face by intention.
Yet, under the situation of different character, produced the kind of the crystallization that can carry out asperitiesization and the problem that the face orientation is restricted owing to the face orientation at the etch-rate that utilizes above-mentioned crystallization.
In addition, utilizing under the situation of above-mentioned hyperergic medicine, a part that constitutes the semiconductor layer of chip is etched to inside, can produce the problem of bad characteristic etc.
Especially, in light-emitting diode with the such hyaline layer of above-mentioned p type GaP substrate 32 and 232, when the surface of the hyaline layer that becomes light taking-up portion is minute surface, because the emergent light of luminescent layer is reflected on its surface, thereby in the multipath reflection process, increased optical loss, thereby reduced the efficient that the emergent light of luminescent layer is taken out to the outside, the method for therefore carrying out asperitiesization is the important method that is used for high briliancyization.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode and manufacture method thereof of high briliancy, it does not rely on material, face orientation, and under any circumstance can both use the asperities method, and can prevent to produce bad characteristic.
In order to solve above-mentioned problem, light-emitting diode of the present invention is characterized in that, has: luminescent layer, and it is made of semiconductor layer; The intermediate layer, it is located on this luminescent layer, is made of semiconductor layer; And hyaline layer, it is located on the above-mentioned intermediate layer, and, emergent light for above-mentioned luminescent layer has permeability, wherein, part or all of the surface of above-mentioned hyaline layer is processed into trachytic with cutting blade, and the particle diameter of the sand grains of above-mentioned cutting blade is more than the 2 μ m.
Light-emitting diode according to said structure, because part or all of the surface of above-mentioned hyaline layer is processed into trachytic with cutting blade, so can efficient take out to the outside from part or all emergent light on the surface of hyaline layer well, thereby can reach high briliancyization with luminescent layer.
In addition, because part or all of the surface of above-mentioned hyaline layer is processed into trachytic with cutting blade, so the material of hyaline layer is that any material can.
In addition, because part or all of the surface of above-mentioned hyaline layer is processed into trachytic with cutting blade, so hyaline layer can not prevent to produce bad characteristic by hyperergic medicine over etching.
In addition, the formation method of above-mentioned hyaline layer, constituent material, face orientation can be arbitrarily.
In a kind of light-emitting diode of execution mode, be processed into the side that trachytic surface is above-mentioned hyaline layer with above-mentioned cutting blade.
Light-emitting diode according to above-mentioned execution mode, because part or all of the side of above-mentioned hyaline layer is processed into trachytic with cutting blade, so can efficient take out to the outside from part or all emergent light of the side of hyaline layer well, thereby can reach high briliancyization with luminescent layer.
In addition, because part or all of the side of above-mentioned hyaline layer is processed into trachytic with cutting blade, so the material of hyaline layer and face orientation can be arbitrarily.
In addition, because part or all of the side of above-mentioned hyaline layer is processed into trachytic with cutting blade, so hyaline layer can not prevent to produce bad characteristic by hyperergic medicine over etching.
In addition, the formation method of above-mentioned hyaline layer, constituent material, face orientation can be arbitrarily.Certainly, above-mentioned luminescent layer too.
In a kind of light-emitting diode of execution mode, be processed into the end face that trachytic surface is above-mentioned hyaline layer with above-mentioned cutting blade.
Wherein, the end face of so-called above-mentioned hyaline layer be on the hyaline layer with the surface of intermediate layer side opposition side.
Light-emitting diode according to above-mentioned execution mode, because part or all of the end face of above-mentioned hyaline layer is processed into trachytic, so can efficient take out to the outside from part or all emergent light of the end face of hyaline layer well, thereby can reach high briliancyization with luminescent layer.
In addition, because part or all of the end face of above-mentioned hyaline layer is processed into trachytic with cutting blade, so the material of hyaline layer is that any material can.
In addition, because part or all of the end face of above-mentioned hyaline layer is processed into trachytic with cutting blade, so hyaline layer can not prevent to produce bad characteristic by hyperergic medicine over etching.
In addition, the formation method of above-mentioned hyaline layer, constituent material, face orientation can be arbitrarily.
In a kind of light-emitting diode of execution mode, part or all of the side of above-mentioned luminescent layer is processed into trachytic with cutting blade.
Light-emitting diode according to above-mentioned execution mode, because part or all of the side of above-mentioned luminescent layer is processed into trachytic with cutting blade, so, can efficient take out to the outside from part or all emergent light of the side of luminescent layer well, thereby can reach higher briliancyization luminescent layer.
In a kind of light-emitting diode of execution mode, above-mentioned hyaline layer is the substrate that sticks on the above-mentioned intermediate layer.
In a kind of light-emitting diode of execution mode, above-mentioned hyaline layer is epitaxially grown layer or epitaxial growth substrate.
In a kind of light-emitting diode of execution mode, above-mentioned luminescent layer is made of compound, and this compound comprises the two or more at least element among Al (aluminium), Ga (gallium), As (arsenic), In (indium), P (phosphorus), Zn (zinc), Se (selenium), Te (tellurium), Sn (tin), Si (silicon), C (carbon), Ti (titanium), Mg (magnesium), Cd (cadmium), B (boron), N (nitrogen), O (oxygen) and the S (sulphur).
In a kind of light-emitting diode of execution mode, above-mentioned hyaline layer is made of compound, and this compound comprises the two or more at least element among Al, Ga, As, In, P, Zn, Se, Te, Sn, Si, C, Ti, Mg, Cd, B, N, O and the S.
In a kind of light-emitting diode of execution mode, above-mentioned luminescent layer is made of AlGaInP, and above-mentioned hyaline layer is made of GaP.
Manufacturing method for LED of the present invention, it is characterized in that, comprise: make the operation of wafer, this wafer comprises: the luminescent layer that is made of semiconductor layer, be located on this luminescent layer and the intermediate layer that is made of semiconductor layer and be located on the above-mentioned intermediate layer and the hyaline layer that has permeability for the emergent light of above-mentioned luminescent layer; And part or all of the surface of above-mentioned hyaline layer being processed into trachytic operation with cutting blade, the particle diameter of the sand grains of above-mentioned cutting blade is more than the 2 μ m.
Manufacturing method for LED according to above-mentioned formation, because part or all of the surface of above-mentioned hyaline layer is processed into trachytic with cutting blade, so needn't consider the material and the face orientation of hyaline layer, and can be easily and make part or all of surface of hyaline layer become trachytic at low cost.
Therefore, can be easily and realize the high briliancyization of above-mentioned light-emitting diode at low cost.
In addition, because part or all of the surface of above-mentioned hyaline layer is processed into trachytic with cutting blade, so the material of hyaline layer and face orientation can be arbitrarily.
In addition, because part or all of the surface of above-mentioned hyaline layer is processed into trachytic with cutting blade, so hyaline layer can not prevent to produce bad characteristic by hyperergic medicine over etching.
In addition, because the asperities processing of above-mentioned hyaline layer carries out with cutting blade, thereby can omit the operation of handling that the needed chemical treatment operation of asperities processing, the diaphragm that carry out form etc. by chemicals.
Above-mentioned cutting blade not only can be used for semiconducting crystal, and can implement the asperities processing to the non-crystalline material of for example glass, quartz, sapphire etc., can also implement the asperities processing for the material with resistance to chemical reagents.
In a kind of manufacturing method for LED of execution mode, be processed into the side that trachytic surface is above-mentioned hyaline layer with above-mentioned cutting blade.
Manufacturing method for LED according to above-mentioned formation, because part or all of the side of above-mentioned hyaline layer is processed into trachytic with cutting blade, so needn't consider the material and the face orientation of hyaline layer, and can be easily and make part or all of side of hyaline layer become trachytic at low cost.
Therefore, can be easily and realize the high briliancyization of above-mentioned light-emitting diode at low cost.
In addition, because part or all of the side of above-mentioned hyaline layer is processed into trachytic with cutting blade, so the material of hyaline layer and face orientation can be arbitrarily.
In addition, because part or all of the side of above-mentioned hyaline layer is processed into trachytic with cutting blade, so hyaline layer can not prevent to produce bad characteristic by hyperergic medicine over etching.
In addition, because the asperities processing of above-mentioned hyaline layer carries out with cutting blade, thereby can omit the operation of handling that the needed chemical treatment operation of asperities processing, the diaphragm that carry out form etc. by chemicals.
Above-mentioned cutting blade not only can be used for semiconducting crystal, and can implement the asperities processing to the non-crystalline material of for example glass, quartz, sapphire etc., can also implement the asperities processing for the material with resistance to chemical reagents.
In a kind of manufacturing method for LED of execution mode, be processed into the end face that trachytic surface is above-mentioned hyaline layer with above-mentioned cutting blade.
Wherein, the end face of so-called above-mentioned hyaline layer be on the hyaline layer with the surface of intermediate layer side opposition side.
Manufacturing method for LED according to above-mentioned formation, because part or all of the end face of above-mentioned hyaline layer is processed into trachytic with cutting blade, so needn't consider the material and the face orientation of hyaline layer, and can be easily and make part or all of end face of hyaline layer become trachytic at low cost.
Therefore, can be easily and realize the high briliancyization of above-mentioned light-emitting diode at low cost.
In addition, because part or all of the end face of above-mentioned hyaline layer is processed into trachytic with cutting blade, so the material of hyaline layer and face orientation can be arbitrarily.
In addition, because part or all of the end face of above-mentioned hyaline layer is processed into trachytic with cutting blade, so hyaline layer can not prevent to produce bad characteristic by hyperergic medicine over etching.
In addition, because the asperities processing of above-mentioned hyaline layer carries out with cutting blade, thereby can omit the operation of handling that the needed chemical treatment operation of asperities processing, the diaphragm that carry out form etc. by chemicals.
Above-mentioned cutting blade not only can be used for semiconducting crystal, and can implement the asperities processing to the non-crystalline material of for example glass, quartz, sapphire etc., can also implement the asperities processing for the material with resistance to chemical reagents.
In a kind of manufacturing method for LED of execution mode, before above-mentioned wafer is divided into component shape,, make part or all of side of above-mentioned hyaline layer become trachytic by the hemisect undertaken by above-mentioned cutting blade or precut.
Manufacturing method for LED according to above-mentioned execution mode, because before above-mentioned wafer is divided into component shape, by the hemisect undertaken by above-mentioned cutting blade or precut, make part or all of side of hyaline layer become trachytic, thus can for be comprised in state in the wafer down and the light-emitting diode that has carried out the asperities processing carry out electrooptics and measure and check.That is, can be in very optical check near the light-emitting diode of the state of component shape.
In addition, after carrying out above-mentioned optical check, when carrying out the asperities processing of light-emitting diode, check the dependency relation variation of briliancy of the light-emitting diode chip for backlight unit of detected briliancy and component shape (completion status) by this.
In a kind of manufacturing method for LED of execution mode, after above-mentioned wafer is divided into component shape, part or all of the side of above-mentioned hyaline layer is processed into trachytic with above-mentioned cutting blade.
Manufacturing method for LED according to above-mentioned execution mode, because after above-mentioned wafer is divided into component shape, with cutting blade part or all of the side of hyaline layer is processed into trachytic, so when wafer is divided into component shape, also can carry out the asperities processing, thereby can improve the degree of freedom of manufacturing process by cutting blade.
Manufacturing method for LED according to above-mentioned execution mode, has dependency relation between the particle diameter of the sand grains of above-mentioned cutting blade and the output of chip, by making its particle diameter is more than the 2 μ m, can obtain the good asperities of efficient that the emergent light of luminescent layer is taken out to the outside reliably.
In addition, under the situation of removing the mechanical damage layer that forms by above-mentioned cutting blade,,, also can keep and remove same asperities state before the above-mentioned affected layer even after removing this affected layer when the particle diameter of the sand grains of cutting blade is 4 μ m when above.
Usually, the sand grains of cutting blade uses the such very high material of hardness of diamond, owing to be mechanically to form the asperities state, so the asperities state whether, is not subjected to the influence of face orientation dependence etc., and can form the asperities state for any material easily.
Even for example the GaP substrate also can form the asperities state by enough cutting blades.This GaP substrate is being used as transparent substrates and the AlGaInP layer is being used as luminescent layer, and when making part or all of side of transparent substrates become trachytic with cutting blade, can obtain the red light-emitting component of high output.
Certainly, use the method for above-mentioned cutting blade, be not limited on the luminescent layer that constitutes by AlGaInP, be provided with the situation of GaP substrate, it can be suitable for having the light-emitting diode of any hyaline layer, for example is suitable for being provided with in the situation that the GaN/InGaN layer is set on the Sapphire Substrate, on glass substrate or SiC substrate the situation of AlGaInP layer and GaN/InGaN layer, epitaxial growth AlGaAs layer (having transparent composition for redness) and stack gradually situation of luminescent layer etc. on the GaAs substrate.
Light-emitting diode of the present invention, can can seek high briliancyization by making light send the face asperitiesization, especially in being provided with the light-emitting diode of hyaline layer, do not form the asperities state, so can seek the high briliancyization of element owing to can relying on material.
In addition, can omit the chemical treatment after chip is cut apart, thereby manufacturing process is simplified.
Can understand the present invention fully by following detailed explanation and accompanying drawing.But accompanying drawing just is used to the figure that illustrates, and it does not limit the present invention.
Description of drawings
Fig. 1 is the ideograph of chip structure of the light-emitting diode of the first embodiment of the present invention;
Fig. 2 A is the ideograph of MOCVD crystalline growth that is used for the light-emitting diode of key diagram 1;
Fig. 2 B is the ideograph of formation of GaP connected structure that is used for the light-emitting diode of key diagram 1;
Fig. 3 A is expression with the particle diameter of sand grains is the figure of the cutting blade of the 4 μ m state that grinds bevel when cutting p type GaP substrate;
Fig. 3 B is expression with the particle diameter of sand grains is the figure of the cutting blade of the 1 μ m state that grinds bevel when cutting p type GaP substrate;
Fig. 4 A is that the side is the schematic diagram of the light path in the light-emitting diode of minute surface;
Fig. 4 B is that the side is the schematic diagram of the light path in the light-emitting diode of asperities;
Fig. 5 A is that the side is the curve chart of orientation characteristic of the light-emitting diode of asperities;
Fig. 5 B is that the side is the curve chart of orientation characteristic of the light-emitting diode of minute surface;
Fig. 6 is expression because the difference of the particle diameter of blade sand grains and the different curve chart of the output of light-emitting diode.
Fig. 7 is the ideograph of existing light emitting diode construction;
Fig. 8 is the ideograph of the LED chip construction of the second embodiment of the present invention;
Fig. 9 A is the ideograph of MOCVD crystalline growth that is used for the light-emitting diode of key diagram 8;
Fig. 9 B is the ideograph of formation of GaP connected structure that is used for the light-emitting diode of key diagram 8;
Figure 10 A is expression with the particle diameter of sand grains is the figure of the cutting blade of the 4 μ m state that grinds bevel when cutting p type GaP substrate;
Figure 10 B is expression with the particle diameter of sand grains is the figure of the cutting blade of the 1 μ m state that grinds bevel when cutting p type GaP substrate;
Figure 11 A is that end face is the schematic diagram of the light path in the light-emitting diode of minute surface;
Figure 11 B is that end face is the schematic diagram of the light path in the light-emitting diode of asperities;
Figure 12 is expression because the difference of the particle diameter of blade sand grains and the different curve chart of the output of light-emitting diode;
The ideograph of a kind of execution mode when Figure 13 is expression cutting end face a part of;
Figure 14 is the ideograph of other existing light emitting diode construction.
Embodiment
Below, the embodiment of illustrated light-emitting diode of the present invention is described in further detail.
(first embodiment)
Fig. 1 represents the ideograph of chip structure of the light-emitting diode of the first embodiment of the present invention.
Above-mentioned light-emitting diode comprises: p type GaP substrate 12; Be laminated in the p type GaP contact layer 13 on this p type GaP substrate 12; P type AlInP second covering 14; P type AlGaInP active layer 15; N type AlInP first covering 16; And n type AlGaAs current-diffusion layer 17.Above-mentioned p type AlGaInP active layer 15 is examples of luminescent layer.In addition, above-mentioned p type GaP substrate 12 is examples of hyaline layer.In addition, each example in intermediate layer naturally of above-mentioned p type GaP contact layer 13 and p type AlInP second covering 14.
Above-mentioned p type GaP substrate 12; P type GaP contact layer 13; P type AlInP second covering 14; P type AlGaInP active layer 15; The side of n type AlInP first covering 16 and n type AlGaAs current-diffusion layer 17 all is processed to trachytic.
Though not shown, on said n type AlGaAs current-diffusion layer 17, be formed with the ohmic contact layer that constitutes by AuSi/Au, and on this ohmic contact layer, be formed with n side line joint pad electrode (n lateral electrode) 18.Wherein, the said n side line engages and forms roughly circular plate shape with pad electrode 18.
On the other hand, under above-mentioned p type GaP substrate 12, be formed with the p side ohmic contact layer electrode 11 that constitutes by AuBe.Wherein, (with the surface of the surface opposite side of p type AlGaInP active layer 15 sides) forms point-like to above-mentioned p side ohmic contact layer electrode 11 at the back side of p type GaP substrate 12.
The light-emitting diode of said structure is made as follows.
At first, shown in Fig. 2 A, by MOCVD (organic metal vapor phase growth) method, on n type GaAs substrate 19, stack gradually n type GaAs resilient coating 20, bed thickness and be the p type GaP contact layer 13 that the n type AlGaAs current-diffusion layer 17 of 3 μ m, n type AlInP first covering 16 that bed thickness is 1 μ m, p type AlGaInP active layer 15 that bed thickness is 0.5 μ m, p type AlInP second covering 14 that bed thickness is 1 μ m and bed thickness are 3 μ m.
Then, shown in Fig. 2 B, the p type GaP substrate of additionally preparing 12 is contacted, behind imposed load on the p type GaP substrate 12 with p type GaP contact layer 13, under this state p type GaP substrate 12 and p type GaP contact layer 13 are being placed under hydrogen environment and the high temperature, and they are engaged.
Then, remove said n type GaAs substrate 19 and n type GaAs resilient coating 20 with the Ammonia etchant.
Then, as shown in Figure 1, after the back side of above-mentioned p type GaP substrate 12 utilizes vapour deposition method accumulation AuBe and globule shape ground to form pattern, carry out alloying.Thus, obtained the p side Ohmic electrode 11 that constitutes by above-mentioned AuBe.
Then, utilize vapour deposition method accumulation AuSi/Au and n side line to engage the material of using pad electrode 18 on the surface of said n type AlGaAs current-diffusion layer 17.After roughly circular plate shape ground forms pattern with this AuSi/Au and above-mentioned material, carry out alloying.Thus, having obtained above-mentioned ohmic contact layer and n side line engages with electrode 18.
Then, utilizing cutting will comprise above-mentioned p type GaP substrate 12; P type GaP contact layer 13; P type AlInP second covering 14; P type AlGaInP active layer 15; After the wafer of n type AlInP first covering 16 and n type AlGaAs current-diffusion layer 17 is cut apart, obtain light-emitting diode chip for backlight unit.It is the cutting blade of 4 μ m that the particle diameter of sand grains has been used in this cutting.
Then, in order to remove the mechanical damage layer that causes owing to above-mentioned cutting, cut surface is carried out etching with the mixed liquor of sulfuric acid, hydrogen peroxide, water.At this moment, remove above-mentioned affected layer as long as the layer that etching is removed as thin as a wafer is just enough.Even will remove as the layer etching as thin as a wafer of the part of above-mentioned affected layer, and also can not eliminate the asperities state.Under the situation of keeping such asperities state easily and reliably, as long as use the big cutting blade of size ratio 4 μ m of sand grains to cut.Like this under the situation, be that the cutting blade of 4 μ m is compared, can improve light and take out efficient with the particle diameter that uses sand grains.
In the past, be that cutting blade below the 1 μ m cuts by particle diameter with sand grains, make by cutting blade form grind bevel and form state near minute surface after, utilize HCl to handle or its dilute solution carries out the asperities processing.
Cutting blade is to utilize electro-deposition etc. to adhere to the blade of the sand grains of diamond particles etc. on discoideus base station, and by making it carry out high speed rotating semi-conducting material is cut.The particle diameter of the sand grains of cutting blade is more little, and grinding that bevel is processed must be smooth more, and damaged (fragment) of material is few more.Therefore otherwise sand grains is big more, is easy to generate fragment more, and the top marginal portion appearance of the chip that is formed by cutting blade is damaged.
The state that grinds bevel when Fig. 3 A represents that the particle diameter with sand grains is the cutting blade cutting p type GaP substrate 12 of 4 μ m.The state that grinds bevel when Fig. 3 B represents that the particle diameter with sand grains is the cutting blade cutting p type GaP substrate 12 of 1 μ m.
From Fig. 3 A, Fig. 3 B as can be seen, because the difference of the particle diameter of cutting blade, great changes will take place for the state of its cut surface (grinding bevel).
Such asperities processing is in order to improve light taking-up efficient and to carry out, but chip sides is not being implemented under the situation of asperities processing, shown in Fig. 4 A, be reflected and be closed in chip internal in chip sides from the luminous part of the luminescent layer of chip internal, and carrying out repeatedly in the process of multipath reflection, in crystallization, be absorbed or decay, perhaps enter luminescent layer once more, and be absorbed at this.
On the other hand, shown in Fig. 4 B, after chip sides carry out asperitiesization, luminous incident angle for chip sides from the luminescent layer of chip internal is changed, make not being reflected to chip internal of this light and increase, take out efficient thereby improved light to the ratio that chip exterior penetrates.
In GaP, with the mask of (111) face equivalence following character is arranged, because the reaction speed of HCl when handling is slow, this face of equal value occurs from the teeth outwards, becomes the asperities state on the macroscopic view, forms the concavo-convex of several nanometers (nm) on the microcosmic on treated side.And above-mentioned reaction speed is extremely slow, need carry out HCl for a long time and handle.In addition, carry out etching, handle so need on the basis of protection luminescent layer, carry out HCl because luminescent layer utilizes HCl to handle.In addition, the reason owing to the face orientation of chip can't obtain good asperities state.
Under the situation of this first embodiment, be the cutting blade of 4 μ m owing to use the particle diameter of sand grains, therefore, form the concavo-convex of several microns (μ m) on the bevel grinding of cutting blade formation, this grinds bevel becomes the asperities state.
Under the situation of the big cutting blade of the size ratio 4 μ m that use sand grains,, can realize that HCl handles or the simplification of chip surface protection operation, thereby can enhance productivity though fragment has a little to increase.
In addition, to reach the equal above degree of the asperities chip that formed by chemical treatment be no problem in the output of the light-emitting diode of this first embodiment.Specifically, after cutting, do not carry out owing to the light-emitting diode of removing that cuts the mechanical damage layer that produces is output as 6.5mW with the little cutting blade of the particle diameter of sand grains.In addition, after cutting, carried out owing to the light-emitting diode of removing that cuts the mechanical damage layer that produces is output as 8.0mW with the little cutting blade of the particle diameter of sand grains.And, as this first embodiment, after cutting, do not carry out owing to the light-emitting diode of removing that cuts the mechanical damage layer that produces is output as 8.8mW with the big cutting blade of the particle diameter of sand grains.
It is the curve of the orientation characteristic of the light-emitting diode that cuts of the cutting blade of 4 μ m that Fig. 5 A represents to use the particle diameter of sand grains.In addition, to represent to use the particle diameter of sand grains be the curve of the orientation characteristic of the light-emitting diode that cuts of the cutting blade of 1 μ m to Fig. 5 B.
From Fig. 5 A and Fig. 5 B as can be seen, be that the light-emitting diode that the cutting blade of 1 μ m cuts is compared with the particle diameter that uses sand grains, the particle diameter that uses sand grains is that the composition of the light of the cutting blade of the 4 μ m light-emitting diode outgoing from the side of cutting increases to some extent.
For this reason, for the particle diameter of the sand grains of confirming cutting blade and the relation of light output, the particle diameter that uses sand grains is that the cutting blade of 0.5 μ m, 3 μ m, 5 μ m, 7 μ m is tested, and confirms that the light of the light-emitting diode that cuts with each cutting blade is exported.
Fig. 6 represents above-mentioned result of experiment.
As can be seen from Figure 6, the output of the particle diameter of the sand grains of cutting blade and the light of light-emitting diode has relevant relation, and the particle diameter that especially uses sand grains is that the light output of the light-emitting diode that cuts of the cutting blade of 5 μ m, 7 μ m increases.
From as can be seen above, when the bigger cutting blade of the particle diameter that uses sand grains, can improve the light output of light-emitting diode, but when the particle diameter that uses sand grains is cutting blade more than the 8 μ m, owing to confirmed the phenomenon that extremely shorten the useful life of cutting blade, therefore, when considering cost, productivity, the particle diameter of the sand grains of the employed cutting blade when preferably making light-emitting diode is more than the 2 μ m, below the 8 μ m.
In above-mentioned first embodiment, trachytic all is processed in the side of light-emitting diode, but also can be only the part of a side's of p type GaP substrate 12 side be processed into trachytic, also can be only the part of the side of p type GaP substrate 12 be processed into trachytic.
In above-mentioned first embodiment, p type AlGaInP active layer 15 is used as an example of luminescent layer, but also can use the luminescent layer that constitutes by the compound that comprises the two or more element in Al, Ga, As, In, P, Zn, Se, Te, Sn, Si, carbon, Ti, Mg, Cd, boron, nitrogen, oxygen and the sulphur at least.
In above-mentioned first embodiment, use p type GaP substrate 12 as an example of hyaline layer, but also can use the hyaline layer that constitutes by the compound that comprises the two or more element among Al, Ga, As, In, P, Zn, Se, Te, Sn, Si, C, Ti, Mg, Cd, B, N, O and the S at least.
The light-emitting diode of above-mentioned first embodiment is the structure with AlGaInP luminescent layer and GaP substrate, but light-emitting diode of the present invention is not limited to this structure, for example also can be the structure with AlGaAs luminescent layer and GaAs substrate, this structure also has the same effect with above-mentioned first embodiment.In addition, under the situation of said structure, the GaAs substrate sees through the luminous of AlGaAs luminescent layer.
In above-mentioned first embodiment, only wafer is cut into a plurality of chips (light-emitting diode) with cutting blade, but also can with cutting blade with the wafer hemisect or precut after, wafer is divided into a plurality of chips.
In above-mentioned first embodiment, wafer being divided in the cutting action of a plurality of chips, trachytic is processed in the side of chip, but also can in cutting action, trachytic be processed in the side of chip, and after cutting action, trachytic is processed in the side of chip with cutting blade.
(second embodiment)
Fig. 8 represents the ideograph of chip structure of the light-emitting diode of the second embodiment of the present invention.
Above-mentioned light-emitting diode comprises: p type GaP substrate 112; P type GaP contact layer 113; P type AlInP second covering 114; P type AlGaInP active layer 115; N type AlInP first covering 116; And n type AlGaAs current-diffusion layer 117.In addition, above-mentioned p type AlGaInP active layer 115 is examples of luminescent layer.Above-mentioned p type GaP substrate 112 is examples of hyaline layer.In addition, each example in intermediate layer naturally of above-mentioned p type GaP contact layer 113 and p type AlInP second covering 114.
In above-mentioned p type GaP substrate 112, with whole trachytics that are processed to of the envelope of p type GaP contact layer 113 side opposition sides.In addition, in above-mentioned p type GaP substrate 112, with whole trachytics that are processed on the surface of above-mentioned surperficial approximate vertical.That is whole trachytics that are processed to of the end face of above-mentioned p type GaP substrate 112 and side.
Being formed with the p side line on above-mentioned p type GaP substrate 112 engages with pad electrode (p lateral electrode) 111.Wherein, above-mentioned p side line engages and forms roughly circular plate shape with pad electrode 111.In addition, between above-mentioned p side line engages with pad electrode 111 and p type GaP substrate 112,, be formed with the p side ohmic contact layer that constitutes by AuBe though do not illustrate.Above-mentioned p side ohmic contact layer engages with the p side line with pad electrode 111 and forms roughly the same shape.That is, the part of the end face of above-mentioned p type GaP substrate 112 surface of p type GaP contact layer 113 side opposition sides (on the p type GaP substrate 112 with) is not engaged with pad electrode 111 by p side ohmic contact layer and p side line and covers and expose.
On the other hand, under said n type AlGaAs current-diffusion layer 117, be formed with the n side chip join electrode 118 that constitutes by AuSi/Au.Wherein, the surface of n type AlInP first covering 116 side opposition sides (on the n type AlGaAs current-diffusion layer 117 with) forms point-like to said n side chip join at the back side of n type AlGaAs current-diffusion layer 117 with electrode 118.
The light-emitting diode of said structure is made as follows.
At first, shown in Fig. 9 A, by MOCVD (organic metal vapor phase growth) method, on n type GaAs substrate 119, stack gradually n type GaAs resilient coating 120, bed thickness and be the p type GaP contact layer 113 that the n type AlGaAs current-diffusion layer 117 of 20 μ m, n type AlInP first covering 116 that bed thickness is 1 μ m, p type AlGaInP active layer 115 that bed thickness is 0.5 μ m, p type AlInP second covering 114 that bed thickness is 1 μ m and bed thickness are 3 μ m.
Then, shown in Fig. 9 B, after making additionally the p type GaP substrate of preparing 112 contact also imposed load with p type GaP contact layer 113, be placed under hydrogen environment and the high temperature under this state, and p type GaP substrate 112 is being engaged with p type GaP contact layer 113.
Then, remove said n type GaAs substrate 119 and n type GaAs resilient coating 120 with the Ammonia etchant.
Then, the mode according to be cut to the degree of depth part about 5 μ m from the end face of above-mentioned p type GaP substrate 112 surface of p type GaP contact layer 113 side opposition sides (on the p type GaP substrate 112 with) makes cutting blade scanning.Thus, with the whole asperitiesization of end face of above-mentioned p type GaP substrate 112.At this, having used the particle diameter of blade width 50 μ m, sand grains is the cutting blade of 4 μ m.
Then, as shown in Figure 8, above-mentioned p type GaP substrate 112 by the end face of asperitiesization on, utilize vapour deposition method to pile up AuBe and p side line and engage material with pad electrode 111, after roughly circular plate shape ground forms pattern with this AuBe and above-mentioned material, carry out alloying.Thus, having obtained above-mentioned p side ohmic contact layer and p side line engages with pad electrode 111.
Then, the surface of n type AlInP first covering 116 side opposition sides (on the n type AlGaAs current-diffusion layer 117 with) utilizes vapour deposition method to pile up AuSi/Au in the bottom surface of said n type AlGaAs current-diffusion layer 117.After AuSi/Au globule shape ground is formed pattern, carry out alloying.Thus, obtained said n side chip join electrode 118.
Then, utilizing cutting will comprise above-mentioned p type GaP substrate 112; P type GaP contact layer 113; P type AlInP second covering 114; P type AlGaInP active layer 115; After the wafer of n type AlInP first covering 116 and n type AlGaAs current-diffusion layer 117 is cut apart, obtain light-emitting diode chip for backlight unit.
Then, in order to remove the mechanical damage layer that causes owing to above-mentioned cutting, utilize the mixed liquor of sulfuric acid, hydrogen peroxide, water that the end face of light-emitting diode and the cut surface of side are carried out etching.At this moment, remove above-mentioned affected layer as long as the layer that etching is removed as thin as a wafer is just enough.
Above-mentioned cutting blade is to utilize electro-deposition etc. to adhere to the blade of the sand grains of diamond particles etc. on discoideus base station.By making such cutting blade carry out high speed rotating semi-conducting material is cut.The particle diameter of the sand grains of above-mentioned cutting blade is more little, and grinding that bevel is processed must be smooth more, and damaged (fragment) of material is few more.Otherwise the particle diameter of above-mentioned cutting blade is big more, is easy to generate fragment more.
The state that grinds bevel when Figure 10 A represents that the particle diameter with sand grains is the cutting blade cutting p type GaP substrate of 4 μ m.The state that grinds bevel when Figure 10 B represents that the particle diameter with sand grains is the cutting blade cutting p type GaP substrate of 1 μ m.
From Figure 10 A, Figure 10 B as can be seen, because the difference of the particle diameter of cutting blade, great changes will take place for the state of its cut surface (grinding bevel).
Such asperities processing is in order to improve light taking-up efficient and to carry out, but the chip end face is not being implemented under the situation of asperities processing, shown in Figure 11 A, be reflected and be closed in chip internal at the chip end face from the luminous part of the luminescent layer of chip internal, and carrying out repeatedly in the process of multipath reflection, enter luminescent layer once more, and be attenuated at this.
On the other hand, shown in Figure 11 B, after the end face of chip carry out asperitiesization, luminous incident angle for the chip end face from the luminescent layer of chip internal is changed, make not being reflected to chip internal of this light and increase, take out efficient thereby improved light to the composition that chip exterior penetrates.
Under the situation of this second embodiment, be the cutting blade of 4 μ m owing to use the particle diameter of sand grains, therefore, form several microns concavo-convex on the bevel grinding of forming of cutting blade, this grinds bevel becomes the asperities state.
In addition, the output of the light-emitting diode of this second embodiment is compared when not carrying out asperities and is increased.Specifically, the end face of light-emitting diode and side are that the light-emitting diode of minute surface is output as 8.0mW.And, as this second embodiment, utilize the big cutting blade of particle diameter of sand grains to make the light-emitting diode of end face and side asperitiesization be output as 8.5mW.
For the particle diameter of the sand grains of confirming cutting blade and the relation of light output, the particle diameter that uses sand grains is that the cutting blade of 0.5 μ m, 3 μ m, 5 μ m, 7 μ m is tested, and confirms that the light of the light-emitting diode that cuts with each cutting blade is exported.
Figure 12 represents above-mentioned result of experiment.
As can be seen from Figure 12, the output of the particle diameter of the sand grains of cutting blade and the light of light-emitting diode has relevant relation, and the particle diameter that especially uses sand grains is that the light output of the light-emitting diode that cuts of the cutting blade of 5 μ m, 7 μ m increases.
From as can be seen above, when the bigger cutting blade of the particle diameter that uses sand grains, can improve the light output of light-emitting diode, but when the particle diameter that uses sand grains is cutting blade more than the 8 μ m, owing to confirmed the phenomenon that extremely shorten the useful life of cutting blade, therefore, when considering cost, productivity, the particle diameter of the sand grains of employed cutting blade is more than the 2 μ m, below the 8 μ m when preferably making light-emitting diode.
In above-mentioned second embodiment, the end face of light-emitting diode all is processed into trachytic, but also can be only the part of the end face of p type GaP substrate 112 be processed into trachytic.Specifically, as shown in figure 13, also can avoid the p side line and engage the formation zone of using pad electrode 111, utilize cutting to form asperities zone 121 at the end face of p type GaP substrate.Under the situation that forms this asperities zone 121, can improve the p side line and engage the flatness of using pad electrode 111, obtain good line bond strength.In addition, 122 of Figure 13 is mirror sections.
In above-mentioned second embodiment, the side and the end face of light-emitting diode is processed into trachytic, but also can be only the end face of light-emitting diode be processed into trachytic.Be processed under the trachytic situation at a end face, end face all can be processed into trachytic, in addition, also can a part be processed into trachytic end face with this light-emitting diode
In above-mentioned second embodiment, p type AlGaInP active layer 115 is used as an example of luminescent layer, but also can use the luminescent layer that constitutes by the compound that comprises the two or more element in Al, Ga, As, In, P, Zn, Se, Te, Sn, Si, carbon, Ti, Mg, Cd, boron, nitrogen, oxygen and the sulphur at least.
In above-mentioned second embodiment, use p type GaP substrate 112 as an example of hyaline layer, but also can use the hyaline layer that constitutes by the compound that comprises the two or more element among Al, Ga, As, In, P, Zn, Se, Te, Sn, Si, C, Ti, Mg, Cd, B, N, O and the S at least.
The light-emitting diode of above-mentioned second embodiment is the structure with AlGaInP luminescent layer and GaP substrate, but light-emitting diode of the present invention is not limited to this structure, for example also can be the structure with AlGaAs luminescent layer and GaAs substrate, this structure also has the same effect with above-mentioned second embodiment.In addition, under the situation of said structure, the GaAs substrate sees through the luminous of AlGaAs luminescent layer.
In above-mentioned second embodiment, only wafer is divided into a plurality of chips (light-emitting diode) with cutting blade, but also can with cutting blade with the wafer hemisect or precut after, wafer is divided into a plurality of chips.
In above-mentioned second embodiment, wafer being divided in the cutting action of a plurality of chips, trachytic is processed in the side of chip, but also can in cutting action, trachytic be processed in the side of chip, and after cutting action, trachytic is processed in the side of chip with cutting blade.
The present invention also can suitably make up the situation of above-mentioned first embodiment record and the situation of above-mentioned second embodiment record.
In addition, light-emitting diode of the present invention also can be processed into trachytic with part or all of the side of luminescent layer with cutting blade.
In addition, light-emitting diode of the present invention also can have glass or other photopermeability substrate.
In addition, light-emitting diode of the present invention also can have the photopermeability layer of crystalline growth, can also have epitaxially grown InGaN etc. on Sapphire Substrate.
That is, the present invention can be suitable for having luminescent layer and see through from the light-emitting diode of any structure of the hyaline layer of the light of this luminescent layer outgoing.
As above embodiments of the invention are illustrated, but clearly the present invention can carry out various changes.And such change should not be regarded as a departure from aim of the present invention and scope, and those skilled in the art can clearly change in the scope that is included in technical scheme of the present invention all.
Claims (14)
1, a kind of light-emitting diode is characterized in that,
Have: luminescent layer, it is made of semiconductor layer;
The intermediate layer, it is located on this luminescent layer, is made of semiconductor layer; And
Hyaline layer, it is located on the above-mentioned intermediate layer, and, have permeability for the emergent light of above-mentioned luminescent layer,
Wherein, part or all of the surface of above-mentioned hyaline layer is processed into trachytic with cutting blade,
The particle diameter of the sand grains of above-mentioned cutting blade is more than the 2 μ m.
2, light-emitting diode as claimed in claim 1 is characterized in that,
Be processed into the side that trachytic surface is above-mentioned hyaline layer with above-mentioned cutting blade.
3, light-emitting diode as claimed in claim 1 is characterized in that,
Be processed into the end face that trachytic surface is above-mentioned hyaline layer with above-mentioned cutting blade.
4, light-emitting diode as claimed in claim 1 is characterized in that,
Part or all of the side of above-mentioned luminescent layer is processed into trachytic with cutting blade.
5, light-emitting diode as claimed in claim 1 is characterized in that,
Above-mentioned hyaline layer is the substrate that sticks on the above-mentioned intermediate layer.
6, light-emitting diode as claimed in claim 1 is characterized in that,
Above-mentioned hyaline layer is epitaxially grown layer or epitaxial growth substrate.
7, light-emitting diode as claimed in claim 1 is characterized in that,
Above-mentioned luminescent layer is made of compound, and this compound comprises the two or more at least element among Al, Ga, As, In, P, Zn, Se, Te, Sn, Si, C, Ti, Mg, Cd, B, N, O and the S.
8, light-emitting diode as claimed in claim 1 is characterized in that,
Above-mentioned hyaline layer is made of compound, and this compound comprises the two or more at least element among Al, Ga, As, In, P, Zn, Se, Te, Sn, Si, C, Ti, Mg, Cd, B, N, O and the S.
9, light-emitting diode as claimed in claim 1 is characterized in that,
Above-mentioned luminescent layer is made of AlGaInP,
Above-mentioned hyaline layer is made of GaP.
10, a kind of manufacturing method for LED is characterized in that, comprising:
Make the operation of wafer, this wafer comprises: the luminescent layer that is made of semiconductor layer, be located on this luminescent layer and the intermediate layer that is made of semiconductor layer and be located on the above-mentioned intermediate layer and the hyaline layer that has permeability for the emergent light of above-mentioned luminescent layer; And
With cutting blade part or all of the surface of above-mentioned hyaline layer is processed into trachytic operation, the particle diameter of the sand grains of above-mentioned cutting blade is more than the 2 μ m.
11, manufacturing method for LED as claimed in claim 10 is characterized in that,
Be processed into the side that trachytic surface is above-mentioned hyaline layer with above-mentioned cutting blade.
12, manufacturing method for LED as claimed in claim 10 is characterized in that,
Be processed into the end face that trachytic surface is above-mentioned hyaline layer with above-mentioned cutting blade.
13, manufacturing method for LED as claimed in claim 11 is characterized in that,
Before above-mentioned wafer is divided into component shape,, make part or all of side of above-mentioned hyaline layer become trachytic by the hemisect undertaken by above-mentioned cutting blade or precut.
14, manufacturing method for LED as claimed in claim 11 is characterized in that,
After above-mentioned wafer is divided into component shape, part or all of the side of above-mentioned hyaline layer is processed into trachytic with above-mentioned cutting blade.
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| CN102956777B (en) * | 2012-10-26 | 2015-07-15 | 江苏威纳德照明科技有限公司 | GaP (gallium phosphide)-based light emitting diode with interface texturing layer and manufacturing method of GaP-based light emitting diode with interface texturing layer |
| CN108550666A (en) * | 2018-05-02 | 2018-09-18 | 天津三安光电有限公司 | Upside-down mounting quaternary system light emitting diode epitaxial structure, upside-down mounting quaternary series LED and its growing method |
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