CN102943307A - Single crystal silicon alcohol-free wool making additive - Google Patents
Single crystal silicon alcohol-free wool making additive Download PDFInfo
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- CN102943307A CN102943307A CN2012104898128A CN201210489812A CN102943307A CN 102943307 A CN102943307 A CN 102943307A CN 2012104898128 A CN2012104898128 A CN 2012104898128A CN 201210489812 A CN201210489812 A CN 201210489812A CN 102943307 A CN102943307 A CN 102943307A
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Abstract
The invention discloses a single crystal silicon alcohol-free wool making additive which is composed of alkali corrosion liquid, nonionic surfactant, cation surfactant, anhydrous dextrose and organic salt. The quantity of the nonionic surfactant is 0.01-5% of that of the alkali corrosion liquid, the quantity of the cation surfactant is 0.01-0.3% of that of the alkali corrosion liquid, the quantity of the anhydrous dextrose is 0.05-5.5% of mass of the alkali corrosion liquid, and the quantity of the organic salt is 0.5-8% of mass of the alkali corrosion liquid. A product of the additive enables a single crystal silicon suede 'pyramid' to be small in size and be about 1-3 mum, improves decontamination effect, removes basket impresses and finger impresses, is capable of quickly and effectively forming the suede and is matched with the existing production devices.
Description
Technical field
The present invention relates to a kind of silicon single crystal making herbs into wool additive.
Background technology
In silicon single crystal alkaline corrosion making herbs into wool process, the main ingredient of basic solution commonly used is sodium hydroxide or sodium hydroxide, Virahol or ethanol, matte additive such as water glass.
The suede corrosion principle: the matte silicon face is to utilize anisotropic etch of silicon, forms small pyramidal four sides side centrum at (100) silicon chip surface.In general, interplanar covalent linkage density is higher, and then each crystal face of this family of crystal planes connects more firm, also with regard to more difficult being corroded, therefore, corrosion speed is just slower on the vertical direction of this family of crystal planes, and interplanar covalent linkage density is lower, and then this crystal face more easily is corroded.Because each atom has two dangling bonds on (100) crystal face, each atom of (111) face only has dangling bonds, so (100) face is faster than the erosion rate of (111).For silicon, if select suitable corrosive fluid and temperature, (100) face is with more than the large decades of times of (111) face erosion rate.Therefore, the anisotropic etch of (100) silicon chip finally causes producing many densely covered surfaces on the surface and puts centrum for the four sides of (111) face, forms the silicon face of matte shape.
Summary of the invention
The object of the present invention is to provide the effective silicon single crystal of a kind of making herbs into wool without pure making herbs into wool additive.
Technical solution of the present invention is:
A kind of silicon single crystal is characterized in that without pure making herbs into wool additive: be comprised of alkaline corrosion liquid, nonionogenic tenside, cats product, dextrose anhydrous and organic salt; Wherein the amount of nonionogenic tenside is equivalent to 0.01～5% of alkaline corrosion liquid quality, the amount of cats product is equivalent to 0.01～0.3% of alkaline corrosion liquid quality, the amount of dextrose anhydrous is equivalent to 0.05～5.5% of alkaline corrosion liquid quality, and the amount of organic salt is equivalent to 0.5～8% of alkaline corrosion liquid quality.
Described alkaline corrosion liquid is that mass concentration is 0.1～4% sodium hydroxide solution.
Nonionogenic tenside is to contain in alkylphenol polyoxyethylene, high-carbon fatty alcohol polyoxyethylene ether, polyoxyethylene carboxylate, polyoxyethylene amine, alkylol amide, thanomin, sucrose ester, sorbitan ester, the alkylol amide one or several.
Cats product is one or more in fatty amine salt, ethanolamine salt, polyethylene polyamines salt, quaternary, tetrahydroglyoxaline, Moroxydine class, the triazine derivative.
Organic salt is one or more in sodium-acetate, Tetrabutylammonium bromide, acetic acid pyridinium salt, sodium methyl, the sodium ethylate.
Product of the present invention makes monocrystalline silicon piece texture " pyramid " size little, and approximately 1～3 micron, and strengthen clean effect, and remove flower basket mark, remove finger-marks, can effectively form fast matte, and mate with existing equipment.The present invention makes increases " nucleation " starting point in the solution, matte " pyramid " can be grown at silicon chip surface.This is without containing a certain amount of nonionogenic tenside in the pure additive, cats product reduces the surface tension of water, effectively infiltrates silicon chip surface, make making herbs into wool after silicon chip surface clean, obtain qualified matte.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is originally to be the monocrystalline silicon suede outward appearance photo of processing through the present invention.
Fig. 2 is the monocrystalline silicon suede SEM photo of processing through the present invention.
Embodiment
A kind of silicon single crystal is comprised of alkaline corrosion liquid, nonionogenic tenside, cats product, dextrose anhydrous and organic salt without pure making herbs into wool additive; Wherein the amount of nonionogenic tenside is equivalent to 0.01～5%(example 0.01%, 3%, 5% of alkaline corrosion liquid quality), the amount of cats product is equivalent to 0.01～0.3%(example 0.01%, 0.1%, 0.3% of alkaline corrosion liquid quality), the amount of dextrose anhydrous is equivalent to 0.05～5.5%(example 0.05%, 3%, 5.5% of alkaline corrosion liquid quality), the amount of organic salt is equivalent to 0.5～8%(example 0.5%, 3%, 8% of alkaline corrosion liquid quality).
Described alkaline corrosion liquid is that mass concentration is 0.1～4%(example 0.1%, 2%, 4%) sodium hydroxide solution.
Nonionogenic tenside is to contain alkylphenol polyoxyethylene (or in the high-carbon fatty alcohol polyoxyethylene ether, polyoxyethylene carboxylate, polyoxyethylene amine, alkylol amide, thanomin, sucrose ester, sorbitan ester, alkylol amide one or several).
Cats product is fatty amine salt (or in the ethanolamine salt, polyethylene polyamines salt, quaternary, tetrahydroglyoxaline, Moroxydine class, triazine derivative one or more).
Organic salt is sodium-acetate (or in the Tetrabutylammonium bromide, acetic acid pyridinium salt, sodium methyl, sodium ethylate one or more).
During use, the making herbs into wool temperature is 65～77 ℃, and the making herbs into wool time is 600～1100 seconds.
Claims (5)
1. a silicon single crystal is characterized in that: be comprised of alkaline corrosion liquid, nonionogenic tenside, cats product, dextrose anhydrous and organic salt without pure making herbs into wool additive; Wherein the amount of nonionogenic tenside is equivalent to 0.01～5% of alkaline corrosion liquid quality, the amount of cats product is equivalent to 0.01～0.3% of alkaline corrosion liquid quality, the amount of dextrose anhydrous is equivalent to 0.05～5.5% of alkaline corrosion liquid quality, and the amount of organic salt is equivalent to 0.5～8% of alkaline corrosion liquid quality.
2. silicon single crystal according to claim 1 is characterized in that without pure making herbs into wool additive: described alkaline corrosion liquid is that mass concentration is 0.1～4% sodium hydroxide solution.
3. silicon single crystal according to claim 1 and 2 is characterized in that without pure making herbs into wool additive: nonionogenic tenside is to contain in alkylphenol polyoxyethylene, high-carbon fatty alcohol polyoxyethylene ether, polyoxyethylene carboxylate, polyoxyethylene amine, alkylol amide, thanomin, sucrose ester, sorbitan ester, the alkylol amide one or several.
4. silicon single crystal according to claim 1 and 2 is characterized in that without pure making herbs into wool additive: cats product is one or more in fatty amine salt, ethanolamine salt, polyethylene polyamines salt, quaternary, tetrahydroglyoxaline, Moroxydine class, the triazine derivative.
5. silicon single crystal according to claim 1 and 2 is characterized in that without pure making herbs into wool additive: organic salt is one or more in sodium-acetate, Tetrabutylammonium bromide, acetic acid pyridinium salt, sodium methyl, the sodium ethylate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2012104898128A CN102943307A (en) | 2012-11-27 | 2012-11-27 | Single crystal silicon alcohol-free wool making additive |
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| CN2012104898128A CN102943307A (en) | 2012-11-27 | 2012-11-27 | Single crystal silicon alcohol-free wool making additive |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205815A (en) * | 2013-05-03 | 2013-07-17 | 上海交通大学 | Solar energy mono-crystalline silicon piece flocking solution and application method thereof |
| CN103361740A (en) * | 2013-07-23 | 2013-10-23 | 德清丽晶能源科技有限公司 | Monocrystalline silicon piece alkaline wool-making liquid alcohol-free additive and its application |
| CN103882528A (en) * | 2014-03-28 | 2014-06-25 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing polycrystalline silicon wafer texture surface |
| WO2015032154A1 (en) * | 2013-09-04 | 2015-03-12 | 常州时创能源科技有限公司 | Polycrystalline silicon wafer texturizing additive and use thereof |
| CN107034518A (en) * | 2017-06-26 | 2017-08-11 | 张兆民 | A kind of monocrystalline silicon flocking additive |
| CN107338480A (en) * | 2017-08-24 | 2017-11-10 | 嘉兴尚能光伏材料科技有限公司 | A kind of monocrystalline silicon silicon wafer fine hair making method and its flocking additive |
| CN107523880A (en) * | 2016-06-20 | 2017-12-29 | 杭州聚力氢能科技有限公司 | For the processing method of bad after Wool-making agent of bad processing and preparation method thereof after monocrystalline silicon making herbs into wool and monocrystalline silicon making herbs into wool |
| CN107858756A (en) * | 2017-12-02 | 2018-03-30 | 常州高特新材料有限公司 | A kind of monocrystalline silicon flocking additive and its application |
| CN107955974A (en) * | 2018-01-09 | 2018-04-24 | 常州时创能源科技有限公司 | The flocking additive of inverted pyramid textured mono-crystalline silicon piece and its application |
| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN110644056A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Formula of composite texturing solution additive for preparing fine and dense pyramid monocrystalline silicon textured surface |
| CN112899791A (en) * | 2021-01-19 | 2021-06-04 | 阎新燕 | Texturing agent for diamond wire cutting monocrystalline silicon piece and preparation method thereof |
| WO2021238496A1 (en) * | 2020-05-25 | 2021-12-02 | 常州时创能源股份有限公司 | Monocrystalline silicon wafer texturing additive and use thereof |
| CN113964215A (en) * | 2021-12-23 | 2022-01-21 | 绍兴拓邦电子科技有限公司 | Texturing method of TOPcon battery |
| CN113981543A (en) * | 2021-11-02 | 2022-01-28 | 常州君合科技股份有限公司 | Texturing additive with liquid crystal structure and preparation method and application thereof |
| CN114959909A (en) * | 2021-02-23 | 2022-08-30 | 南通圣威斯特能源科技有限公司 | Single crystal texturing additive, preparation method and application thereof |
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| CN101818378A (en) * | 2010-04-26 | 2010-09-01 | 江苏林洋新能源有限公司 | Velvet manufacturing solution of monocrystalline silicon additive |
| CN102479698A (en) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | Compositions and methods for texturing of silicon wafers |
| CN102787361A (en) * | 2012-09-07 | 2012-11-21 | 中国船舶重工集团公司第七一八研究所 | Additive for texturing solution of monocrystalline silicon |
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2012
- 2012-11-27 CN CN2012104898128A patent/CN102943307A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101818378A (en) * | 2010-04-26 | 2010-09-01 | 江苏林洋新能源有限公司 | Velvet manufacturing solution of monocrystalline silicon additive |
| CN102479698A (en) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | Compositions and methods for texturing of silicon wafers |
| CN102787361A (en) * | 2012-09-07 | 2012-11-21 | 中国船舶重工集团公司第七一八研究所 | Additive for texturing solution of monocrystalline silicon |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205815A (en) * | 2013-05-03 | 2013-07-17 | 上海交通大学 | Solar energy mono-crystalline silicon piece flocking solution and application method thereof |
| CN103361740A (en) * | 2013-07-23 | 2013-10-23 | 德清丽晶能源科技有限公司 | Monocrystalline silicon piece alkaline wool-making liquid alcohol-free additive and its application |
| WO2015032154A1 (en) * | 2013-09-04 | 2015-03-12 | 常州时创能源科技有限公司 | Polycrystalline silicon wafer texturizing additive and use thereof |
| CN103882528A (en) * | 2014-03-28 | 2014-06-25 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing polycrystalline silicon wafer texture surface |
| CN107523880A (en) * | 2016-06-20 | 2017-12-29 | 杭州聚力氢能科技有限公司 | For the processing method of bad after Wool-making agent of bad processing and preparation method thereof after monocrystalline silicon making herbs into wool and monocrystalline silicon making herbs into wool |
| CN107034518A (en) * | 2017-06-26 | 2017-08-11 | 张兆民 | A kind of monocrystalline silicon flocking additive |
| CN107338480A (en) * | 2017-08-24 | 2017-11-10 | 嘉兴尚能光伏材料科技有限公司 | A kind of monocrystalline silicon silicon wafer fine hair making method and its flocking additive |
| CN107858756B (en) * | 2017-12-02 | 2019-12-24 | 常州高特新材料股份有限公司 | Monocrystalline silicon texturing additive and application thereof |
| CN107858756A (en) * | 2017-12-02 | 2018-03-30 | 常州高特新材料有限公司 | A kind of monocrystalline silicon flocking additive and its application |
| CN107955974A (en) * | 2018-01-09 | 2018-04-24 | 常州时创能源科技有限公司 | The flocking additive of inverted pyramid textured mono-crystalline silicon piece and its application |
| CN107955974B (en) * | 2018-01-09 | 2020-06-09 | 常州时创能源股份有限公司 | Texturing additive for inverted pyramid textured monocrystalline silicon wafer and application thereof |
| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN110644056A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Formula of composite texturing solution additive for preparing fine and dense pyramid monocrystalline silicon textured surface |
| CN110644056B (en) * | 2019-10-12 | 2022-06-24 | 湖南理工学院 | Formula of composite texturing solution additive for preparing fine and dense pyramid monocrystalline silicon textured surface |
| WO2021238496A1 (en) * | 2020-05-25 | 2021-12-02 | 常州时创能源股份有限公司 | Monocrystalline silicon wafer texturing additive and use thereof |
| CN112899791A (en) * | 2021-01-19 | 2021-06-04 | 阎新燕 | Texturing agent for diamond wire cutting monocrystalline silicon piece and preparation method thereof |
| CN114959909A (en) * | 2021-02-23 | 2022-08-30 | 南通圣威斯特能源科技有限公司 | Single crystal texturing additive, preparation method and application thereof |
| CN113981543A (en) * | 2021-11-02 | 2022-01-28 | 常州君合科技股份有限公司 | Texturing additive with liquid crystal structure and preparation method and application thereof |
| CN113981543B (en) * | 2021-11-02 | 2024-04-12 | 常州君合科技股份有限公司 | Texturing additive with liquid crystal structure and preparation method and application thereof |
| CN113964215A (en) * | 2021-12-23 | 2022-01-21 | 绍兴拓邦电子科技有限公司 | Texturing method of TOPcon battery |
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Application publication date: 20130227 |