CN102916583A - Voltage-reduction type switch power supply - Google Patents
Voltage-reduction type switch power supply Download PDFInfo
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- CN102916583A CN102916583A CN2012103477899A CN201210347789A CN102916583A CN 102916583 A CN102916583 A CN 102916583A CN 2012103477899 A CN2012103477899 A CN 2012103477899A CN 201210347789 A CN201210347789 A CN 201210347789A CN 102916583 A CN102916583 A CN 102916583A
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Abstract
A voltage-reduction type switch power supply comprises an upper bridge driving signal module, a lower bridge driving signal module, an upper and lower bridge module and an inductance-capacitance voltage stabilizing module, wherein the upper and lower bridge module comprises an upper bridge IGBT (insulated gate bipolar translator) and a lower bridge IGBT, an output end of the upper bridge driving signal module is connected with a grid electrode of the upper bridge IGBT, an output end of the lower bridge driving signal module is connected with a grid electrode of the lower bridge IGBT, a collector electrode of the upper bridge IGBT is connected with a high-voltage direct-current power supply, an emitting electrode of the upper bridge IGBT is connected with a collector electrode of the lower bridge IGBT by a diode, the inductance-capacitance voltage stabilizing module comprises an inductor and a capacitor, one end of the inductor is connected with the collector electrode of the lower bridge IGBT, an emitting electrode of the lower bridge IGBT is a low level, the current can flow to one end of the inductor from the emitting electrode of the upper bridge IGBT through the diode, and the other end of the inductor can output a direct-current power supply. The invention provides the voltage-reduction type switch power supply, and the voltage-reduction direct-current power supply can be generated in low cost and high efficiency, so as to be used by a high-power load.
Description
Technical field
The present invention relates to a kind of Switching Power Supply, be specially adapted to the occasion that regulation voltage comes speed governing of passing through of high power DC electric machine.
Background technology
Figure 1 shows that the schematic diagram of small-power buck switching regulator commonly used.Because inductance L only has unidirectional current to flow through, and does not have larger voltage drop, input is mainly born by switching tube VT with the voltage drop of output, and when bearing power is larger, switching tube will generate heat and can't work.
Summary of the invention
In view of this, the invention provides a kind of step down switching regulator, can generate the decompression DC power supply in low-cost high-efficiency ground, for powerful load.
The present invention adopts following technical scheme:
Step down switching regulator, comprise that bridge drives signaling module, lower bridge drives signaling module, bridge module up and down, and inductance capacitance Voltage stabilizing module, described up and down bridge module comprises bridge IGBT and lower bridge IGBT, the output that described upper bridge drives signaling module connects the upward grid of bridge IGBT, described lower bridge drives the grid of the lower bridge IGBT of output connection of signaling module, the collector electrode of described upper bridge IGBT connects high-voltage DC power supply, the emitter of upper bridge IGBT connects the collector electrode of lower bridge IGBT by diode, described inductance capacitance Voltage stabilizing module comprises inductance and the electric capacity of series connection, one end of described inductance connects the collector electrode of lower bridge IGBT, the emission of lower bridge IGBT is low level very, described diode is so that electric current can flow to from the emitter of upper bridge IGBT an end of described inductance, and the other end of described inductance is the output DC source.
Further; described step down switching regulator comprises that also driving the upper bridge that signaling module is connected with described upper bridge owes the driving voltage protection module; described upper bridge owe the driving voltage protection module for detection of upper bridge IGBT grid and the upper bridge driving voltage between the emitter; when bridge driving voltage is lower than set point on this; upper bridge drives signaling module output low level, not conducting of upper bridge IGBT.
Further; described step down switching regulator comprises that also driving the lower bridge that signaling module is connected with described lower bridge owes the driving voltage protection module; described lower bridge owe the driving voltage protection module for detection of lower bridge IGBT grid and the lower bridge driving voltage between the emitter; when this time bridge driving voltage is lower than set point; lower bridge drives signaling module output low level, not conducting of lower bridge IGBT.
Preferably, be connected with the voltage stabilizing didoe of two differential concatenations between the grid of described upper bridge IGBT and the emitter.The voltage of each voltage stabilizing didoe is 15V; if the grid of upper bridge IGBT and the voltage between the collector electrode are higher than 20V or are lower than-20V; upper bridge IGBT can be burnt immediately, so add that the voltage stabilizing didoe of the 15V of two Opposite direction connections can play the voltage-limiting protection effect between the grid of upper bridge IGBT and collector electrode.
Preferably, be connected with the voltage stabilizing didoe of two differential concatenations between the grid of described lower bridge IGBT and the emitter.The voltage of each voltage stabilizing didoe is 15V; if the grid of lower bridge IGBT and the voltage between the collector electrode are higher than 20V or are lower than-20V; lower bridge IGBT can be burnt immediately, so add that the voltage stabilizing didoe of the 15V of two Opposite direction connections can play the voltage-limiting protection effect between the grid of lower bridge IGBT and collector electrode.
Preferably, described high-voltage DC power supply is 500V.
Technical conceive of the present invention is: when upper bridge IGBT conducting, the inductance of the upper bridge IGBT of high-voltage DC power supply process, diode, inductance capacitance Voltage stabilizing module is to capacitor charging, and at this moment inductance flows through forward current; During instantly bridge IGBT conducting, the output DC source flows to lower bridge IGBT through the inductance of inductance capacitance Voltage stabilizing module, and at this moment inductance flows through reverse current; Like this, what inductance passed through is the positive and negative high-frequency alternating current that alternately changes, less inductance can obtain large induction reactance and play good dividing potential drop effect, pressure reduction between high-voltage DC power supply and the output DC source is mainly born by inductance, the pressure drop of going up like this bridge IGBT is little, thereby can be by larger electric current (because the maximum diffipation power of IGBT be constant), like this, this step down switching regulator can be used for the workplace of high power load.In addition, the IGBT of efficient, high voltage bearing voltage driving that switching circuit is selected can enlarge voltage and the power bracket of this open pipe power supply as switching tube.
Beneficial effect of the present invention is: (1) adopts up and down bridge construction, has utilized IGBT as switching tube, provides low-cost, has generated the solution of decompression DC power supply efficiently; (2) inductance mainly provides the effect of pressure drop, is high-frequency alternating current because inductance passes through, and inductance can be smaller, saves and make the required raw material of large inductance, saved cost.
Description of drawings
Fig. 1 is one of circuit diagram of upper bridge driving signaling module.
Fig. 1 is continuous to be two of the upper bridge circuit diagram that drives signaling module, and wherein, line1, line2, line3, line4 are the tie points that Fig. 1 and Fig. 1 continue.
Fig. 2 is the circuit diagram that lower bridge drives signaling module.
Fig. 3 is the circuit diagram that upper bridge is owed the driving voltage protection module.
Fig. 4 is the circuit diagram that lower bridge is owed the driving voltage protection module.
Fig. 5 is the circuit diagram of bridge module and inductance capacitance Voltage stabilizing module up and down.
The upper bridge of drawing reference numeral: 1-drives signaling module; Bridge drives signaling module under the 2-; 3-is bridge module up and down; 4-inductance capacitance Voltage stabilizing module; The upper bridge of 5-is owed the driving voltage protection module; Bridge is owed the driving voltage protection module under the 6-.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
With reference to Fig. 1-5: step down switching regulator, comprise that bridge drives signaling module 1, lower bridge drives signaling module 2, bridge module 3 up and down, and inductance capacitance Voltage stabilizing module 4, described up and down bridge module 3 comprises bridge IGBT and lower bridge IGBT, the output that described upper bridge drives signaling module 1 connects the upward grid of bridge IGBT Q10, described lower bridge drives the grid of the lower bridge IGBT Q11 of output connection of signaling module 2, the collector electrode of described upper bridge IGBT Q10 connects the high-voltage DC power supply of 500V, the emitter of upper bridge IGBT Q10 connects the collector electrode of lower bridge IGBT Q11 by diode D15, described inductance capacitance Voltage stabilizing module 4 comprises inductance L 6 and the electric capacity of series connection, described electric capacity is in series by C60 and C61, one end of described inductance L 6 connects the collector electrode of lower bridge IGBT Q11, the emission of lower bridge IGBT Q11 is low level G very, described diode D15 is so that electric current can flow to from the emitter of upper bridge IGBT Q10 an end of described inductance L 6, and the other end of described inductance L 6 is output DC source V_OUT.
Described step down switching regulator comprises that also driving the upper bridge that signaling module 1 is connected with described upper bridge owes driving voltage protection module 5; described upper bridge is owed grid and upper bridge driving voltage (ZG+) emitter between-ZS of driving voltage protection module 5 for detection of upper bridge IGBT Q10; the bridge driving voltage is lower than set point and (depends on D1, R9 and P3 on this; be 12V for this set point of map parameter); upper bridge drives signaling module 1 output low level, not conducting of upper bridge IGBT Q10.What upper bridge owed that driving voltage protection module 5 detects among Fig. 2 is+20_Z-ZS, because (ZG+) during upper bridge IGBT conducting=+ the 20_Z(Q2 cut-off, the Q3 conducting), so detection+20_Z-ZS detects (ZG+)-ZS exactly.
Described step down switching regulator comprises that also driving the lower bridge that signaling module 2 is connected with described lower bridge owes driving voltage protection module 6; described lower bridge is owed grid and lower bridge driving voltage (ZG-) emitter between-G of driving voltage protection module 6 for detection of lower bridge IGBT; when this time bridge driving voltage is lower than set point; lower bridge drives signaling module 2 output low levels, not conducting of lower bridge IGBT.What lower bridge owed that driving voltage protection module 5 detects among Fig. 4 is+15V-G, because (ZG-) during lower bridge IGBT conducting=+ the 15V(Q8 cut-off, the Q9 conducting), so detection+15V-G detects (ZG-)-G exactly.
Be connected with voltage stabilizing didoe D12 and the D13 of two differential concatenations between the grid of described upper bridge IGBT and the emitter.The voltage of each voltage stabilizing didoe is 15V; if the grid of upper bridge IGBT and the voltage between the collector electrode are higher than 20V or are lower than-20V; upper bridge IGBT can be burnt immediately, so add that the voltage stabilizing didoe of the 15V of two Opposite direction connections can play the voltage-limiting protection effect between the grid of upper bridge IGBT and collector electrode.
Be connected with voltage stabilizing didoe D18 and the D19 of two differential concatenations between the grid of described lower bridge IGBT and the emitter.The voltage of each voltage stabilizing didoe is 15V; if the grid of lower bridge IGBT and the voltage between the collector electrode are higher than 20V or are lower than-20V; lower bridge IGBT can be burnt immediately, so add that the voltage stabilizing didoe of the 15V of two Opposite direction connections can play the voltage-limiting protection effect between the grid of lower bridge IGBT and collector electrode.
The circuit theory of present embodiment is described as follows:
1.Vcc, Gnd is the external digital power supply, + 500V, G are outside input DC power, + 15V, G ,-10V is that lower bridge drives and use external power source ,+5V ,+20_Z, ZS ,-5_Z is that to use external power source, V_OUT, G be the output of present embodiment step down switching regulator in upper bridge driving.Wherein ,+20_Z-ZS=15V, ZS-(-5_Z)=5V.
2.P1, P2, P3, P4 be optocoupler.
3.P_C be external digital input pulse signal.When P_C=0, not conducting of P1, the port 4 output high level of P1, the Q1 conducting, C100 is recharged, amplifier U50A+the input terminal voltage rising; When P_C=1, the P1 conducting, port 4 output low levels of P1, the Q1 cut-off, C100 discharges through R4, amplifier U50A+input terminal voltage decline.Therefore by the duty ratio of control wave P_C, just can obtain definite U50A+input terminal voltage.
When amplifier U50A+input terminal voltage be higher than amplifier U50A-(input terminal voltage is that V_OUT is through R5 to input terminal voltage, voltage after the R6 dividing potential drop) time, amplifier U50A output P_V exports high level, electric current charges to C34 through R7, the P2 Delayed conducting, port 4 output low levels of P2, the Q2 cut-off, the Q3 conducting, ZG+ is+the 20_Z level, the grid of upper bridge IGBT Q10 and the driving voltage between the emitter (ZG+)-ZS are+20_ZZS, because setting+20_Z-ZS=15V, grid and the driving voltage between the emitter of above bridge IGBT be 15V, upper bridge IGBT conducting, + 500V high-voltage DC power supply is through upper bridge IGBT Q10, diode D15,6 pairs of capacitor C 60 of inductance L, the C61 charging, output DC source V_OUT voltage raises, (V_OUT is through R5 for amplifier U50A De – input terminal voltage, voltage after the R6 dividing potential drop) also raise, when be higher than U50A+during input terminal voltage, U50A output P_V output low level, C34 discharges rapidly through D3, P2 cut-off behind the discharge off, P2 output 4 output high level, Q2 conducting, the Q3 cut-off, ZG+ reduces to-5_Z through the D5 level, on this moment the grid of bridge IGBT Q10 and the driving voltage between the emitter (ZG+) – ZS become (5_Z) – ZS since set ZS – (5_Z)=5V, grid and the driving voltage between the emitter of above bridge IGBTQ10 be-5V upper bridge IGBT cut-off.Need to prove that when the driving voltage of IGBT between grid and emitter was 15V, the conducting effect was best, the driving voltage between grid and emitter is-during 5V, the cut-off effect is best.
5.U50A output P_V receive simultaneously lower bridge and drive in the signaling module 2, drive signal ZG-with the level of Z, ZS for generation of lower bridge.Because the pressure drop of voltage stabilizing didoe D6, D7 is 15V, thus when P_V be high level, or Z is lower than 5V voltage, or ZS is when being higher than 15V voltage, the Q8 base stage is high level and conducting, ZG-reduces to-10V through the D11 level, lower bridge IGBT Q11 cut-off.On the contrary, above-mentioned 3 conditions do not satisfy (that is: not simultaneously conducting of bridge about guaranteeing) entirely, and Q8 just ends, and ZG-is high level, lower bridge IGBT Q11 conducting, and electric current flows to lower bridge IGBT Q11 from V_OUT through inductance L 6, and this moment, inductance L 6 acquisition reverse currents flow through.When upper bridge IGBT conducting, be reverse current owing to what lead to before the inductance L 6, the electric current of inductance can not be undergone mutation, and electric current is by oppositely becoming 0, and progressively forward increases again, makes capacitor charging.As long as inductance, electric capacity design moderate according to load, the frequency of upper and lower bridge alternate conduction is higher, pressure reduction between input+500V high-voltage DC power supply and the output DC source V_OUT is mainly born by inductance L 6, the pressure drop of upper bridge IGBT Q10 is little and can lead to larger electric current, thereby can be applicable to the workplace of high power load.During lower bridge conducting, because its emitter directly meets G, its pressure drop depends primarily on driving, when driving force was strong, its pressure drop was below 1V, like this, during the instantly good conducting of bridge IGBT, voltage between V_OUT and the G is mainly born by inductance L 6, and the pressure drop of lower bridge IGBT is little also can lead to larger electric current, thereby is applicable to the occasion of high power load.
6. owe driving voltage protection module 5 for upper bridge; for a certain reason if (as disturbing or fault); so that+voltage difference of 20_Z and ZS (depends on D1 less than set point; R9 and P3; for map parameter this be worth be 12V); the not conducting of optocoupler P3 left end; then the output 4 of optocoupler P3 is exported high level; the Q2 conducting; the Q3 cut-off; ZG+ output low level-5_Z, the up and down grid of the upper bridge IGBT of bridge module 3 and the driving voltage between the emitter (ZG+) – ZS=-5_Z – ZS=-5V, not conducting of lower bridge IGBT Q10; thereby when playing driving voltage when outside input+20_Z – ZS less than set point, the protective effect of not conducting of upper bridge IGBT.On the contrary, as the driving voltage of outside input+20_Z – ZS during greater than set point, optocoupler P3 conducting, the D2 left side is low level, the Q2 cut-off, the Q3 conducting, ZG+ exports high level, upper bridge IGBT conducting.
7. owe driving voltage protection module 6 for lower bridge; for a certain reason if (as disturbing or fault); so that+voltage difference of 15V and ZS (depends on D8, R19 and P4 less than set point; for map parameter this be worth be 12V); the not conducting of optocoupler P4 left end; then the output 4 of optocoupler P4 is exported high level; the Q8 conducting; the Q9 cut-off; ZG-output low level-10V; the lower bridge IGBT Q11 of bridge module 3 is obstructed up and down, thereby when playing driving voltage+15VZS when outside input less than set point, the protective effect of not conducting of lower bridge IGBT.On the contrary, as the driving voltage+15V-ZS of outside input during greater than set point, optocoupler P4 conducting, the D10 left side is low level, Q8 cut-off, Q9 conducting, ZG-output high level 15V, lower bridge IGBT Q11 conducting.
In the present embodiment, select IGBT as switching tube, can enlarge the voltage of this open pipe power supply and the reason of power bracket is: the voltage range that the IGBT switching tube uses is higher, generally can reach 1200V, electric current is also larger, common electric current such as 15A, and its control only needs the voltage of 15V to drive just passable, so to occasion high-power, high pressure, general preferred IGBT is as switching tube.And other switching tube such as field effect transistor, it is so high that above withstand voltage of 10A just, and generally below 800V, Darlington power transistor is current drive-type, and is withstand voltage lower, and generally below 200V, and the silicon controlled operating frequency is lower, generally is used in the occasion of alternating current.
Among Fig. 1 to Fig. 5; upper bridge driving signaling module 1 is connected driving voltage protection module 5 and is connected at node UP_V place with Shang Qiao; lower bridge driving signaling module 2 is connected driving voltage protection module 6 and is connected at node DOWN_V place with Xia Qiao; upper bridge drives signaling module 1 and is connected bridge module 3 and connects at node ZG+ place; lower bridge drives signaling module 2 and is connected bridge module 3 in the connection of node ZG-place, and bridge module 3 is connected with the inductance capacitance Voltage stabilizing module and is connected at node Z place up and down.
Above-described embodiment only is enumerating of the technology of the present invention design way of realization; protection scope of the present invention is not limited only to above-described embodiment, and protection scope of the present invention may extend to those skilled in the art according to the thinkable equivalent technologies means of technical conceive of the present invention.
Claims (6)
1. step down switching regulator, it is characterized in that: comprise that bridge drives signaling module, lower bridge drives signaling module, bridge module up and down, and inductance capacitance Voltage stabilizing module, described up and down bridge module comprises bridge IGBT and lower bridge IGBT, the output that described upper bridge drives signaling module connects the upward grid of bridge IGBT, described lower bridge drives the grid of the lower bridge IGBT of output connection of signaling module, the collector electrode of described upper bridge IGBT connects high-voltage DC power supply, the emitter of upper bridge IGBT connects the collector electrode of lower bridge IGBT by diode, described inductance capacitance Voltage stabilizing module comprises inductance and the electric capacity of series connection, one end of described inductance connects the collector electrode of lower bridge IGBT, the emission of lower bridge IGBT is low level very, described diode is so that electric current can flow to from the emitter of upper bridge IGBT an end of described inductance, and the other end of described inductance is the output DC source.
2. step down switching regulator as claimed in claim 1; it is characterized in that: described step down switching regulator comprises that also driving the upper bridge that signaling module is connected with described upper bridge owes the driving voltage protection module; described upper bridge owe the driving voltage protection module for detection of upper bridge IGBT grid and the upper bridge driving voltage between the emitter; when bridge driving voltage is lower than set point on this; upper bridge drives signaling module output low level, not conducting of upper bridge IGBT.
3. step down switching regulator as claimed in claim 1 or 2; it is characterized in that: described step down switching regulator comprises that also driving the lower bridge that signaling module is connected with described lower bridge owes the driving voltage protection module; described lower bridge owe the driving voltage protection module for detection of lower bridge IGBT grid and the lower bridge driving voltage between the emitter; when this time bridge driving voltage is lower than set point; lower bridge drives signaling module output low level, not conducting of lower bridge IGBT.
4. step down switching regulator as claimed in claim 3 is characterized in that: the voltage stabilizing didoe that is connected with two differential concatenations between the grid of described upper bridge IGBT and the emitter.
5. step down switching regulator as claimed in claim 4 is characterized in that: the voltage stabilizing didoe that is connected with two differential concatenations between the grid of described lower bridge IGBT and the emitter.
6. step down switching regulator as claimed in claim 1, it is characterized in that: described high-voltage DC power supply is 500V.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012103477899A CN102916583A (en) | 2012-09-19 | 2012-09-19 | Voltage-reduction type switch power supply |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012103477899A CN102916583A (en) | 2012-09-19 | 2012-09-19 | Voltage-reduction type switch power supply |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5414341A (en) * | 1993-12-07 | 1995-05-09 | Benchmarq Microelectronics, Inc. | DC-DC converter operable in an asyncronous or syncronous or linear mode |
| CN101124713A (en) * | 2004-12-07 | 2008-02-13 | 美国快捷半导体有限公司 | Current controlled gate driver for power switches |
| CN102638212A (en) * | 2012-04-24 | 2012-08-15 | 台州学院 | Driver for brushless direct-current motor |
| CN202759381U (en) * | 2012-09-19 | 2013-02-27 | 台州学院 | A switching power supply with reduced voltage |
-
2012
- 2012-09-19 CN CN2012103477899A patent/CN102916583A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5414341A (en) * | 1993-12-07 | 1995-05-09 | Benchmarq Microelectronics, Inc. | DC-DC converter operable in an asyncronous or syncronous or linear mode |
| CN101124713A (en) * | 2004-12-07 | 2008-02-13 | 美国快捷半导体有限公司 | Current controlled gate driver for power switches |
| CN102638212A (en) * | 2012-04-24 | 2012-08-15 | 台州学院 | Driver for brushless direct-current motor |
| CN202759381U (en) * | 2012-09-19 | 2013-02-27 | 台州学院 | A switching power supply with reduced voltage |
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Application publication date: 20130206 |