CN102899639A

CN102899639A - Novel special hook of C/C support plate for PECVD (Plasma Enhanced Chemical Vapor Deposition) device

Info

Publication number: CN102899639A
Application number: CN2012104030878A
Authority: CN
Inventors: 不公告发明人
Original assignee: Jiangsu Rongma New Energy Co Ltd
Current assignee: Jiangsu Rongma New Energy Co Ltd
Priority date: 2012-10-22
Filing date: 2012-10-22
Publication date: 2013-01-30

Abstract

The invention relates to a novel special hook of a C/C support plate for a PECVD (Plasma Enhanced Chemical Vapor Deposition) device used for locating a silicon wafer. The hook comprises a first hook support and a second hook support, which are made by square frames with lower openings, wherein rotary supporting pieces are arranged on the inner side of the lower ends of two support arms of each of the square frames; a first hook and a second hook which are used for locating the silicon wafer are respectively outwards arranged on the low ends of the two support arms of the square frame of the first hook support, and a third hook used for locating the silicon wafer is outwards arranged on the low end of one support arm of the square frame of the second hook support. According to the invention, a film plating spot deviates from an effective region of a cell, and the hook has the advantages of small spot area and high insulation performance, and meanwhile, the support plate is easy to mount and dismounted, and is difficulty to damage.

Description

A kind of new PE CVD device-specific C/C support plate hook

Technical field

The present invention relates to a kind of production unit of solar battery sheet, be specifically related to the hook design of the employed C/C support plate of a kind of board-like PECVD.

Background technology

Board-like PECVD(plasma enhanced chemical vapor deposition method) during process operation, silicon chip transmits after by the location of the hook on the support plate and enters PECVD equipment cavity and finish coating process.

Existing hook structure such as Fig. 2, shown in Figure 3, in the PECVD equipment in " lower film forming " mode, hook is seen Fig. 1 with the mounting means of support plate.Because heavy phase gas is to move from bottom to top, at the heavy film of silicon chip lower surface, therefore hook can block a gas on this direction, thereby cause heavy film uneven at the silicon chip surface corresponding site, form a plated film spot (seeing Fig. 8 b), and the area of this plated film spot is large, thereby affects the visual appearance of cell piece.And the plated film spot is (the plated film spot is positioned at the grid line of cell piece) in the effective area of cell piece, has therefore affected quality and the insulating property of cell piece.Simultaneously because hook is very sharp-pointed with the contact part of silicon chip, and in the process of heavy film, firmly contact with silicon chip always, thereby can cause fully heavy film on this point of contact, thereby cause the cell piece insulating property to reduce.After hook installs with support plate simultaneously, during the dismounting hook, easily damage support plate.

Summary of the invention

The present invention is directed to the deficiency of the problems referred to above, propose the effective area that a kind of plated film spot departs from cell piece, and speck area is little, insulating property are high, simultaneously the new PE CVD device-specific C/C support plate of the quick detachable installation of support plate hook.

The present invention is that the technical scheme that solves the problems of the technologies described above proposition is: a kind of new PE CVD device-specific C/C support plate hook, and the location for silicon chip comprises first, second hook support of being made by the quadra of lower openings; The inboard, lower end of two support arms of described quadra is provided with a rotating top flat, and two top flats are oppositely arranged; To the first hook, the second hook that are outside equipped with for the location of silicon chip, the low side of a support arm of the quadra of described the second hook support is to the 3rd hook that is outside equipped with for the location of silicon chip respectively for the low side of two support arms of the quadra of described the first hook support; And the first hook, the second hook, the 3rd one side that contact with silicon chip of hook are slope, and the vergence direction of described slope of while all deviates from mutually with the top of quadra.

Preferably: described slope surperficial stepped.

Preferably: the angle of inclination between described slope and the support plate is 33 °-35 °.

Preferably: described fixed link is thin lower wide.

Preferably: the bottom surface of described hook support is curved surface.

Preferably: all interfaces of the bottom of described hook support are arc transition.

Preferably: described the first hook, the second hook are the hook that the S316 stainless steel is made.

New PE CVD device-specific C/C support plate hook of the present invention compared to existing technology, has following beneficial effect: 1. owing to comprising first, second hook support of being made by the quadra of lower openings; The inboard, lower end of two support arms of described quadra is provided with a rotating top flat, and two top flats are oppositely arranged, therefore in installation process, only need can effectively first, second hook support be fixed on the support plate by the rotation top flat, therefore little to the damage of support plate in installation or the unloading process.

2. because the two ends of the bottom side of described the first hook support are respectively arranged with the first hook, the second hook, one end of the bottom side of described the second hook support is provided with the 3rd hook, and the first hook, the second hook, the one side that the 3rd hook contacts with silicon chip is slope, the vergence direction of described slope deviates from mutually with the top of hook support simultaneously, silicon chip only has its lower edge to contact with hook when therefore using, thereby so that the plated film spot departs from the effective area of cell piece, and speck area also greatly reduces, be conducive to improve the quality of cell piece, also greatly improved the cell piece insulating property simultaneously.

3. because described slope surperficial stepped, so silicon chip can not slide on linking up with, and greatly facilitates the operation of producers' fluctuating plate, reduced simultaneously the probability that silicon chip breaks off relations at support plate.

4. because described fixed link is thin lower wide, and the sectional dimension on top is less, thereby be easier to distortion, made things convenient for the installation of hook to fix.

5. because the bottom surface of described hook support is curved surface, therefore guarantee under the prerequisite of hook structure intensity, the sectional area that can reduce to link up with, thereby improve the flowability that flows in the chamber, thus can reduce to link up with the impact on process gas flow.

6. because all interfaces of bottom of described hook support are arc transition, therefore can avoid hook because there being sharp parts to produce electrion on the structure.

Description of drawings

Fig. 1 is the mounting structure schematic diagram of existing hook and support plate;

Fig. 2 is the structural representation of 3 ＇ among Fig. 1, and wherein Fig. 2 a is the enlarged diagram of 3 ＇ among Fig. 1, and Fig. 2 b is the left view of Fig. 2 a;

Fig. 3 is the structural representation of 4 ＇ among Fig. 1, and wherein Fig. 3 a is the enlarged diagram of 4 ＇ among Fig. 1, and Fig. 3 b is the left view of Fig. 3 a;

Fig. 4 is the structural representation of the embodiment of the invention;

Fig. 5 is 3 structural representation among Fig. 4;

Fig. 6 is 4 structural representation among Fig. 4;

Fig. 7 is the enlarged diagram of A part among Fig. 4;

Fig. 8 is the heavy film design sketch of hook, and wherein Fig. 8 a is that the present invention links up with heavy film design sketch, the heavy film design sketch of the existing hook of Fig. 8 b;

Wherein: 1 is support plate, and 2 is silicon chip, and 3 ＇ are existing the first hook, 4 ＇ are existing the second hook, and 3 is the first hook support, and 4 is the second hook support, 5 is top flat, 31 is the first hook, and 32 is the second hook, and 41 is the 3rd hook, 6 is the battery effective area, 7 is the battery inactive area, and 8 for the present invention links up with heavy film effect, and 9 are the heavy film effect of existing hook.

Embodiment

Accompanying drawing discloses the structural representation of a preferred embodiment of the invention without limitation, explains technical scheme of the present invention below with reference to accompanying drawing.

Embodiment

A kind of new PE CVD device-specific C/C support plate hook of the present embodiment is used for the location of silicon chip shown in Fig. 4-6, comprise first, second hook support of being made by the quadra of lower openings; The inboard, lower end of two support arms of described quadra is provided with a rotating top flat, and two top flats are oppositely arranged; To the first hook, the second hook that are outside equipped with for the location of silicon chip, the low side of a support arm of the quadra of described the second hook support is to the 3rd hook that is outside equipped with for the location of silicon chip respectively for the low side of two support arms of the quadra of described the first hook support.

As shown in Figure 5, the two ends of the bottom side of described the first hook support are respectively arranged with the first hook, the second hook, and the one side that the first hook, the second hook contact with silicon chip is slope, and the vergence direction of described slope deviates from mutually with the top of hook support simultaneously.

As shown in Figure 6, an end of the bottom side of described the second hook support is provided with the 3rd hook, and the 3rd one side that contact with silicon chip of hook is slope, and the vergence direction of described slope of while deviates from mutually with the top of hook support.

For silicon chip can not slide on hook, greatly make things convenient for the operation of producers' fluctuating plate, reduce simultaneously the probability that silicon chip breaks off relations at support plate, as shown in Figure 7, described slope surperficial stepped,

Angle of inclination between described slope and the support plate is 33 °-35 °, and when support plate was parallel with sea line, the angle of inclination between described slope and the sea line was 33 °-35 °, and the angle of inclination between preferred described slope and the sea line is 34 °.

Fix for the installation of convenient hook, described fixed link is thin lower wide.

Under the prerequisite in order to ensure hook structure intensity, the area that can reduce to link up with, thus can reduce to link up with impact on process gas flow, the bottom surface of described hook support is curved surface.

In order to avoid hook because there being sharp parts to produce electrion on the structure, all interfaces of the bottom of described hook support are arc transition.

Described the first hook, the second hook are the hook that the S316 stainless steel is made.

The present embodiment is because the two ends of the bottom side of described the first hook support are respectively arranged with the first hook, the second hook, one end of the bottom side of described the second hook support is provided with the 3rd hook, and the first hook, the second hook, the one side that the 3rd hook contacts with silicon chip is slope, the vergence direction of described slope deviates from mutually with the top of hook support simultaneously, silicon chip only has its lower edge to contact with hook when therefore using, thereby so that the plated film spot departs from the effective area of cell piece, it is the grid line outside that the plated film spot is positioned at the edge of cell piece, shown in Fig. 8 b, the heavy film design sketch of existing hook, the plated film spot is positioned at the effective area (the plated film spot is positioned at the grid line of cell piece) of cell piece, and speck area is large.Fig. 8 a is that the present invention links up with heavy film design sketch, plated film spot of the present invention departs from the effective area (it is outer that the plated film spot is positioned at the grid line at the edge of cell piece) of cell piece, and speck area also greatly reduces less than plated film spot and the speck area of the heavy film of existing hook among Fig. 8 b, be conducive to improve the quality of cell piece, also greatly improved the cell piece insulating property simultaneously.

The above by reference to the accompanying drawings preferred specific embodiment of described the present invention only is used for the explanation embodiments of the present invention; rather than as the restriction to aforementioned goal of the invention and claims content and scope; any simple modification, equivalent variations and modification that every foundation technical spirit of the present invention is done above embodiment all still belong to the technology of the present invention and rights protection category.

Claims

1. a new PE CVD device-specific C/C support plate is linked up with, and is used for the location of silicon chip, it is characterized in that: comprise first, second hook support of being made by the quadra of lower openings; The inboard, lower end of two support arms of described quadra is provided with a rotating top flat, and two top flats are oppositely arranged; To the first hook, the second hook that are outside equipped with for the location of silicon chip, the low side of a support arm of the quadra of described the second hook support is to the 3rd hook that is outside equipped with for the location of silicon chip respectively for the low side of two support arms of the quadra of described the first hook support; And the first hook, the second hook, the 3rd one side that contact with silicon chip of hook are slope, and the vergence direction of described slope of while all deviates from mutually with the top of quadra.

2. described new PE CVD device-specific C/C support plate hook according to claim 1 is characterized in that: described slope surperficial stepped.

3. described new PE CVD device-specific C/C support plate is linked up with according to claim 2, and it is characterized in that: the angle of inclination between described slope and the support plate is 33 °-35 °.

4. described new PE CVD device-specific C/C support plate is linked up with according to claim 2, and it is characterized in that: described fixed link is thin lower wide.

5. described new PE CVD device-specific C/C support plate is linked up with according to claim 3, and it is characterized in that: the bottom surface of described hook support is curved surface.

6. described new PE CVD device-specific C/C support plate is linked up with according to claim 4, and it is characterized in that: all interfaces of the bottom of described hook support are arc transition.

7. described new PE CVD device-specific C/C support plate is linked up with according to claim 5, it is characterized in that: described the first hook, the second hook are the hook that the S316 stainless steel is made.