CN105420692A - Silicon slice support plate for lower film coating - Google Patents
Silicon slice support plate for lower film coating Download PDFInfo
- Publication number
- CN105420692A CN105420692A CN201511019859.8A CN201511019859A CN105420692A CN 105420692 A CN105420692 A CN 105420692A CN 201511019859 A CN201511019859 A CN 201511019859A CN 105420692 A CN105420692 A CN 105420692A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- support plate
- framework
- fixed plate
- chip support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to the technical field of silicon slice support plate, and especially relates to a silicon slice support plate for lower film coating. The silicon slice support plate at least comprises a unit. Each unit comprises a framework and fixing sheets. Each frame of the framework is provided at least a fixing sheet. One end of the fixing sheet is fixed on the surface of the lower side of the framework, and the other end of the fixing sheet extends along the direction that is from the surface of the lower side of the framework to the inner side of the framework and stretches out the surface of the inner side of the framework. Each unit of the silicon slice support plate is composed of a framework and fixing sheets. The fixing sheets are arranged in the bottom of the framework, the upper surfaces of the fixing sheets and the lower surface of the framework are in the same plane, and no height difference exists. When lower film coating is carried out on a silicon slice, the silicon slice is placed in the framework, the surface, which is to be coated, of the silicone slice is contacted with the fixing sheets, the fixing sheets support the silicon slice, the lower surface of the silicone slice and the lower surface of the framework are in the same plane, no height difference exists between the silicon slice and the support plate, the phenomenon of diffraction is avoided, and the technical problem of dreg falling is solved.
Description
Technical field
The present invention relates to the manufacturing technology field of crystal silicon solar batteries sheet, especially relate to a kind of silicon chip support plate for lower plated film.
Background technology
Existing crystal silicon battery PECVD is in coating process, and the plated film of silicon chip on loading plate is divided into plated film and lower plated film two kinds of modes, and plated film mainly refers to plating silicon nitride and/or Al
2o
3film.
Plated film in what is called, refer to that the to be coated of silicon chip faces up, the gas of plated film flows out down.Lower plated film refers to that the to be coated of silicon chip faces down, and the gas of plated film flows out upward.Plated film refers to NH
3and SiH
4mixed gas, under certain temperature and pressure, chemical vapour deposition is on silicon chip to be coated, synthesizing silicon nitride film; Or trimethyl aluminium (TMA) and O
2under certain temperature and pressure, reaction generates Al
2o
3film, realizes plated film.
In prior art, the main mode adopting upper plated film, in coating process, also can plated film around ion source electrode and cavity, the time has been grown, and the too thick meeting of film is fallen down with disintegrating slag, causes silicon chip to become waste product.Meanwhile, on ion source, plated film also can cause plasma properties to be drifted about, and affects the quality of follow-up coating process.
Lower plated film mode primarily of two kinds of equipment use of Germany, a kind of be MeyerBurger produce SiNA equipment, another one is MAiA equipment; Plasma body is below silicon chip (support plate), and on such plasma electrode, embrittlement silicon nitride disintegrating slag falls in cavity, instead of stays silicon chip film-coated.But in order to make silicon chip be fixed on support plate, specifically arrange latch hook device at the edge of support plate, will the silicon chip of lower plated film be needed to fix, concrete schematic diagram as shown in Figure 1.
Fig. 1 lower left corner has indicated the hook device of the fixing silicon chip of existing lower plated film support plate, a serious problem can be there is in arranging like this, namely certain gap can be there is between silicon chip and support plate, when there is gap, in the process of lower plated film, gas can walk around gap, thus makes the back side of silicon chip also have part by plated film, and industry is referred to as " diffraction "; Another one problem is, hooking device is on loading plate basis, after add up, unstable, mechanically unstable problem in the case of a high temperature can be deposited.
Summary of the invention
The object of the present invention is to provide a kind of silicon chip support plate for lower plated film, to solve the diffraction and unstable technical problem that exist in prior art.
A kind of silicon chip support plate for lower plated film provided by the invention, described silicon chip support plate at least comprises a unit;
Each unit comprises: framework and fixed plate, each frame of described framework is provided with at least one fixed plate, one end of described fixed plate is fixed on the surface of described framework underside, and the other end of described fixed plate extends along described framework underside surface to the inner side of described framework and stretches out the inner surface of described framework.
Silicon chip support plate for lower plated film provided by the invention, each unit of this silicon chip support plate is made up of framework and fixed plate, fixed plate is arranged on the bottom of framework, and the upper surface of fixed plate is concordant with the lower surface of framework, without difference of altitude between the upper surface of fixed plate and the lower surface of framework.Time silicon chip film-coated, silicon chip is placed in framework, the coated surface of silicon chip contacts with fixed plate, fixed plate supporting silicon chip, the lower surface of silicon chip and the lower surface of framework are in same plane, and plated film adopts lower plated film, without difference of altitude between silicon chip and support plate base plane, can prevent diffraction phenomenon like this, also solve the technical problems such as slag.
Each frame of framework multiple fixed plate is set, as 1,2,3,5,8,10 etc., when making placement silicon chip, the better supporting silicon chip of fixed plate.
In order to cost-saving, and keep the stability of silicon chip, preferably, each frame of described framework is provided with 1-5 fixed plate.
More preferably, each frame of described framework is provided with 1-2 fixed plate.
Silicon chip is placed in each unit of silicon chip support plate, fixed plate is used for supporting silicon chip, meanwhile, during plated film, gas also can be ejected into the position of fixed plate, make the silicon chip at fixed plate position can not plated film, but because silicon chip is in the process and use procedure in later stage, edge section does not have practical use, so allow fixed plate to exist, but area is as far as possible little, reduces overlapping of fixed plate and silicon chip as far as possible, reduce the loss of silicon chip film-coated area.
Better supporting object to both reach, reducing again the loss of silicon chip, preferably, the length that described fixed plate stretches out described framework inner surface is 0.2-3mm.
More preferably, described fixed plate stretches out the length of described framework inner surface is 0.5-1mm.
Similarly, preferably, the width of described fixed plate is 0.2-3mm.
More preferably, the width of described fixed plate is 1-1.5mm.
While cost-saving, still can reach the object of fixing silicon chip, preferably, the thickness of described fixed plate is 0.1-2mm.
More preferably, the thickness of described fixed plate is 0.5-1mm.
Silicon chip support plate provided by the invention comprises multiple unit, is in order to batch carries out plated film to silicon chip.The unit number of silicon chip support plate can be 1,2,5,10,15,20,30,40 etc.Be arranged side by side between unit, form array, as can be 4 × 5,4 × 6,4 × 7,4 × 8,5 × 5,5 × 6,5 × 7,5 × 8 etc.
For the ease of arranging, cost-saving, when being arranged side by side between unit, preferably, the position that different units connects shares a frame.
Frame can not be too wide, this is because frame is too wide and too thick, the weight of whole silicon chip support plate is just large, silicon chip support plate under gravity, especially under hot environment, the middle part of silicon chip support plate there will be downward deformation, so, the thickness of the frame of the framework of each unit of silicon chip support plate and width also be there are certain requirements.Preferably, the thickness of described frame is 4-10mm, and the width of described frame is 4-20mm.
In order to prevent silicon chip support plate generation deformation, and can realize batch plated film, preferably, described silicon chip support plate comprises 20-64 unit, is more preferably 30-40 unit.Be arranged side by side between unit, form array, as can be 5 × 5,5 × 6,6 × 5,5 × 8 etc.
Preferably, the material of described framework and fixed plate is any one in carbon fiber, graphite, refractory ceramics.These materials are at high temperature stablized, to prevent silicon chip support plate generation deformation.
Framework and fixed plate one processing polishing shaping, doing so avoids in the case of a high temperature between fixed plate and framework in conjunction with stability problem.
Preferably, in preparation process, framework and the fixed plate of described silicon chip support plate are one-body molded.
In addition, the shape of the fixed plate in the present invention can be rectangle, square, circle, ellipse, trilateral, trapezoidal, pentagon and other irregular figures.
The shape of the framework in each unit and size and need the shape of the silicon chip of plated film and size to adapt.For the ease of placing and taking out, and better prevent diffraction phenomenon, be placed on the silicon chip in each unit of silicon chip support plate, the distance between its edge with framework can not differ too many, generally within 1mm, is preferably 0.3-0.5mm, most preferably is 0.5mm.Framework frame inside dimension as each unit is 157 × 157mm; The outside dimension of silicon chip is 156 × 156mm, and the distance between framework frame medial surface and silicon chip is 0.5mm, silicon chip so both can have been made easily to pick and place, also can better prevent diffraction phenomenon.
Compared with prior art, beneficial effect of the present invention is:
(1) a kind of silicon chip support plate for lower plated film provided by the invention, specific fixed plate is adopted to design, when silicon chip is placed on support plate, the lower plane of silicon chip and the lower plane of support plate are in same plane, between the two without difference of altitude, when adopting lower plated film mode to carry out plated film to silicon chip, prevent diffraction phenomenon, also solve the technical problems such as slag.
(2) present invention defines the quantity of fixed plate, the length of fixed plate, width and thickness, both can better supporting silicon chip, cost-saving greatly again, cut the waste.
(3) present invention also defines thickness and the width of frame, prevent silicon chip support plate generation deformation, keep the stability of silicon chip support plate.
(4) present invention also defines the material of framework and fixed plate, to keep the stability of silicon chip support plate performance.
(5) silicon chip support plate provided by the invention is one-body molded, avoid in the case of a high temperature between fixed plate and framework in conjunction with stability problem.
(6) silicon chip support plate provided by the invention is in use, and the size and shape of silicon chip is fitted mutually with framework, the distance between the edge of silicon chip and framework within 1mm, prevent diffraction phenomenon, silicon chip support plate good stability, be easy to pick and place silicon chip.
Accompanying drawing explanation
In order to be illustrated more clearly in the specific embodiment of the invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of existing silicon chip support plate in background technology of the present invention;
In silicon chip support plate unit that Fig. 2 provides for the embodiment of the present invention, each frame has the schematic diagram of 1 fixed plate;
The cross sectional representation of the frame that Fig. 3 provides for the embodiment of the present invention and fixed plate connecting portion;
In silicon chip support plate unit that Fig. 4 provides for the embodiment of the present invention, each frame has the schematic diagram of 2 fixed plates;
In silicon chip support plate unit that Fig. 5 provides for the embodiment of the present invention, each frame has the schematic diagram of 3 fixed plates;
The schematic diagram of the silicon chip support plate that Fig. 6 provides for the embodiment of the present invention;
Reference numeral:
1-framework; 2-fixed plate; The cross section of 3-framework; The cross section of 4-fixed plate.
Embodiment
Be clearly and completely described technical scheme of the present invention below in conjunction with accompanying drawing, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
In describing the invention, it should be noted that, orientation or the position relationship of the instruction such as term " " center ", " on ", D score, "left", "right", " vertically ", " level ", " interior ", " outward " they be based on orientation shown in the drawings or position relationship; be only the present invention for convenience of description and simplified characterization; instead of instruction or imply the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second ", " the 3rd " only for describing object, and can not be interpreted as instruction or hint relative importance.
In describing the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, particular case above-mentioned term concrete meaning in the present invention can be understood.
A kind of silicon chip support plate for lower plated film provided by the invention, as shown in Fig. 2-Fig. 6, described silicon chip support plate at least comprises a unit;
Each unit comprises: framework 1 and fixed plate 2, each frame of described framework 1 is provided with at least one fixed plate 2, one end of described fixed plate 2 is fixed on the surface on the downside of described framework 1, and the other end of described fixed plate 2 extends along described framework 1 downside surface to the inner side of described framework 1 and stretches out the inner surface of described framework 1.
Silicon chip support plate for lower plated film provided by the invention, each unit of this silicon chip support plate is made up of framework 1 and fixed plate 2, fixed plate 2 is arranged on the bottom of framework 1, specifically as shown in Figure 3, can find out according to the cross section 3 of the framework of Fig. 3 and the cross section 4 of fixed plate, seamless between the upper surface of fixed plate 2 and the lower surface of framework 1, time silicon chip is placed, the lower plane of silicon chip and the lower plane of framework 1 are in same plane, plated film adopts lower plated film, without difference of altitude between silicon chip and support plate, can well prevent diffraction phenomenon, also solve the technical problems such as slag.
Silicon chip is placed in each unit of silicon chip support plate, fixed plate 2 for supporting silicon chip, meanwhile, during plated film, gas also can be ejected into the position of fixed plate, make the silicon chip at fixed plate 2 position can not plated film, but because silicon chip is in the process and use procedure in later stage, edge section does not have practical use, so allow fixed plate 2 to exist, but as far as possible little, reduce overlapping, to reduce the loss of silicon chip of fixed plate 2 and silicon chip as far as possible.
Therefore, the shape of framework 1 can be arranged accordingly according to the shape of silicon chip, and it is consistent that both reach shape, better to mate, facilitates plated film, saves the waste area of silicon chip.
Each frame of framework 1 multiple fixed plate 2 is set, each frame arranges 1 fixed plate 2, as shown in Figure 4 each frame and arranges 2 fixed plates 2, as shown in Figure 5 each frame and arrange 3 fixed plates 2 as shown in Figure 2, in addition, each frame can also arrange 5,8,10 fixed plates 2 etc., when making placement silicon chip, fixed plate 2 is supporting silicon chip better, keeps it steadily.Fixed plate 2 can equal distribution, also can stochastic distribution.
In order to cost-saving, and keep the stability of silicon chip, preferably, each frame of described framework 1 is provided with 1-5 fixed plate 2.
More preferably, each frame of described framework 1 is provided with 1-2 fixed plate 2.
Better supporting object to both reach, reducing again the loss of silicon chip, preferably, the length that described fixed plate 2 stretches out described framework 1 inner surface is 0.2-3mm.Length as fixed plate 2 can be set to 0.2mm, 0.5mm, 0.8mm, 1.0mm, 1.5mm, 2.0mm, 2.5mm, 3mm etc.
More preferably, described fixed plate 2 stretches out the length of described framework inner surface is 0.5-1mm.Length as fixed plate 2 can be set to 0.5mm, 0.6mm, 0.8mm, 1.0mm etc.
Similarly, better supporting object to both reach, reducing again the loss of silicon chip, preferably, the width of described fixed plate 2 is 0.2-3mm.Width as fixed plate 2 can be set to 0.2mm, 0.5mm, 0.8mm, 1.0mm, 1.5mm, 2.0mm, 2.5mm, 3mm etc.
More preferably, the width of described fixed plate 2 is 1-1.5mm.Width as fixed plate 2 can be set to 1mm, 1.2mm, 1.4mm, 1.5mm, 1.5mm etc.
While cost-saving, take into account simultaneously and certain anchorage force be provided, when fixed plate 2 length and width less still can meet the effect of supporting silicon chip, preferably, the thickness of described fixed plate 2 is 0.1-2mm.Thickness as fixed plate 2 can be set to 0.1mm, 0.2mm, 0.5mm, 0.8mm, 1.0mm, 1.5mm, 2.0mm etc.
More preferably, the thickness of described fixed plate 2 is 0.5-1mm.
Silicon chip support plate provided by the invention comprises multiple unit, and specifically as shown in Figure 6, what silicon chip support plate comprised that multiple unit realizes batch carries out plated film to silicon chip, saves program and cost.The unit number of silicon chip support plate can be 1,2,5,10,15,20,30,40 etc.Be arranged side by side between unit, form array, as can be 2 × 5,4 × 4,5 × 6,4 × 8,5 × 8 etc.If Fig. 5 is 5 × 5 arrays.
For the ease of arranging, cost-saving, when being arranged side by side between unit, preferably, the position that different units connects shares a frame.
Frame can not be too wide, this is because frame is too wide and too thick, the weight of whole silicon chip support plate is just large, under gravity, especially under hot environment, the middle part of silicon chip support plate there will be downward deformation to silicon chip support plate, so thickness and the width of frame also there are certain requirements.Preferably, the thickness of described frame is 4-10mm, and the width of described frame is 4-20mm.Thickness as frame can be 4mm, 5mm, 7mm, 9mm, 10mm etc.; The width of frame can be 4mm, 8mm, 10mm, 15mm, 20mm etc.Particularly, in certain embodiments, the thickness of frame is 4mm, and the width of frame is 10mm; In certain embodiments, the thickness of frame is 8mm, and the width of frame is 20mm; In certain embodiments, the thickness of frame is 10mm, and the width of frame is 15mm; In certain embodiments, the thickness of frame is 6mm, and the width of frame is 6mm.
In order to prevent silicon chip support plate generation deformation, and can realize batch plated film, preferably, described silicon chip support plate comprises 20-60 unit, is more preferably 30-40 unit.Be arranged side by side between unit, form array, as can be 5 × 5,5 × 6,6 × 5,4 × 8 etc.
Preferably, the material of described framework 1 and fixed plate 2 is any one in carbon fiber, graphite, refractory ceramics.These materials are at high temperature stablized, to prevent silicon chip support plate generation deformation.
Framework 1 and fixed plate 2 are integrally polished shaping, doing so avoids in the case of a high temperature between fixed plate and framework in conjunction with stability problem.
Preferably, in preparation process, framework 1 and the fixed plate 2 of described silicon chip support plate are one-body molded.
In addition, the shape of the fixed plate 2 in the present invention can be rectangle, square, circle, ellipse, trilateral, trapezoidal, pentagon and other irregular figures.
Shape and the size of the shape of the framework 1 in each unit and size and the silicon chip of plated film are fitted mutually.For the ease of placing and taking out, and better prevent diffraction phenomenon, be placed on the silicon chip in each unit of silicon chip support plate, the distance between its edge with framework 1 can not differ too many, generally within 1mm, is preferably 0.3-0.5mm, most preferably is 0.5mm.Framework frame inside dimension as each unit is 157 × 157mm; The outside dimension of silicon chip is 156 × 156mm, and the distance between framework frame medial surface and silicon chip is 0.5mm, silicon chip so both can have been made easily to place into, also can better prevent diffraction phenomenon.
In summary, silicon chip support plate provided by the invention, adopts high temperature material as shaping in carbon fiber overall processing, does not need to use metal hanger to fix silicon chip as other carbon fiber support plates; The present invention adopts special fixed plate, and one machine-shaping, makes carbon fiber support plate frame and silicon chip accomplish ± 1mm planeness, reduces the diffraction of coating process, optimizes coating process; Silicon chip support plate provided by the invention can arrange sizes support plate, such as 5 × 8 support plates, has stronger versatility.
The beneficial effect that the present invention reaches is as follows:
(1) the present invention's a kind of silicon chip support plate for lower plated film of adopting the design of specific fixed plate 2 to prepare, when silicon chip is placed on support plate, the lower plane of silicon chip and the lower plane of support plate are in same plane, between the two without difference of altitude, when adopting lower plated film mode to carry out plated film to silicon chip, prevent diffraction phenomenon, also solve the technical problems such as slag.
(2) present invention defines the quantity of fixed plate 2, the length of fixed plate 2, width and thickness, both can better supporting silicon chip, cost-saving greatly again, cut the waste.
(3) present invention also defines thickness and the width of the frame of framework 1, prevent silicon chip support plate generation deformation, make silicon chip support plate stable performance.
(4) present invention also defines the material of framework 1 and fixed plate 2, to keep the stability of silicon chip support plate performance.
(5) silicon chip support plate provided by the invention is one-body molded, avoid in the case of a high temperature between fixed plate 2 and framework 1 in conjunction with stability problem.
(6) silicon chip support plate provided by the invention is in use, and the size and shape of silicon chip is fitted mutually with framework, the distance between the edge of silicon chip and framework within 1mm, prevent diffraction phenomenon, silicon chip support plate good stability, be easy to pick and place silicon chip.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. for a silicon chip support plate for lower plated film, it is characterized in that, described silicon chip support plate at least comprises a unit;
Each unit comprises: framework and fixed plate, each frame of described framework is provided with at least one fixed plate, one end of described fixed plate is fixed on the surface of described framework underside, and the other end of described fixed plate extends along described framework underside surface to the inner side of described framework and stretches out the inner surface of described framework.
2. silicon chip support plate according to claim 1, is characterized in that, each frame of described framework is provided with 1-5 fixed plate, is preferably provided with 1-2 fixed plate.
3. silicon chip support plate according to claim 1, is characterized in that, the length that described fixed plate stretches out described framework inner surface is 0.2-3mm, is preferably 0.5-1mm.
4. silicon chip support plate according to claim 1, is characterized in that, the width of described fixed plate is 0.2-3mm, is preferably 1-1.5mm.
5. silicon chip support plate according to claim 1, is characterized in that, the thickness of described fixed plate is 0.1-2mm, is preferably 0.5-1mm.
6. silicon chip support plate according to claim 1, is characterized in that, the position that different units connects shares a frame.
7. silicon chip support plate according to claim 6, is characterized in that, the thickness of described frame is 4-10mm, and the width of described frame is 4-20mm.
8. silicon chip support plate according to claim 6, is characterized in that, described silicon chip support plate comprises 20-6 unit.
9. the silicon chip support plate according to any one of claim 1-8, is characterized in that, the material of described framework and fixed plate is any one in carbon fiber, graphite, refractory ceramics.
10. silicon chip support plate according to claim 9, is characterized in that, in preparation process, and the framework of described silicon chip support plate and the machine-shaping of fixed plate one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511019859.8A CN105420692A (en) | 2015-12-29 | 2015-12-29 | Silicon slice support plate for lower film coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511019859.8A CN105420692A (en) | 2015-12-29 | 2015-12-29 | Silicon slice support plate for lower film coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105420692A true CN105420692A (en) | 2016-03-23 |
Family
ID=55499219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511019859.8A Pending CN105420692A (en) | 2015-12-29 | 2015-12-29 | Silicon slice support plate for lower film coating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105420692A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107841783A (en) * | 2017-12-14 | 2018-03-27 | 南京仁厚科技有限公司 | A kind of upper plated film support plate |
| CN113611640A (en) * | 2021-05-28 | 2021-11-05 | 晋能光伏技术有限责任公司 | Coated carrier and method for increasing TCO (transparent conductive oxide) coated area of heterojunction solar cell by using same |
| CN114188437A (en) * | 2021-10-26 | 2022-03-15 | 晋能清洁能源科技股份公司 | Plate type support plate structure for amorphous silicon deposition |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102899639A (en) * | 2012-10-22 | 2013-01-30 | 江苏荣马新能源有限公司 | Novel special hook of C/C support plate for PECVD (Plasma Enhanced Chemical Vapor Deposition) device |
| CN203049029U (en) * | 2013-01-05 | 2013-07-10 | 京浜光学制品（常熟）有限公司 | Thin resin material coating clamp |
| CN104282604A (en) * | 2014-10-27 | 2015-01-14 | 浙江晶科能源有限公司 | Graphite boat piece for double-faced film coating and graphite boat |
| CN205258601U (en) * | 2015-12-29 | 2016-05-25 | 常州比太科技有限公司 | A silicon chip support plate for $descending coating film |
-
2015
- 2015-12-29 CN CN201511019859.8A patent/CN105420692A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102899639A (en) * | 2012-10-22 | 2013-01-30 | 江苏荣马新能源有限公司 | Novel special hook of C/C support plate for PECVD (Plasma Enhanced Chemical Vapor Deposition) device |
| CN203049029U (en) * | 2013-01-05 | 2013-07-10 | 京浜光学制品（常熟）有限公司 | Thin resin material coating clamp |
| CN104282604A (en) * | 2014-10-27 | 2015-01-14 | 浙江晶科能源有限公司 | Graphite boat piece for double-faced film coating and graphite boat |
| CN205258601U (en) * | 2015-12-29 | 2016-05-25 | 常州比太科技有限公司 | A silicon chip support plate for $descending coating film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107841783A (en) * | 2017-12-14 | 2018-03-27 | 南京仁厚科技有限公司 | A kind of upper plated film support plate |
| CN113611640A (en) * | 2021-05-28 | 2021-11-05 | 晋能光伏技术有限责任公司 | Coated carrier and method for increasing TCO (transparent conductive oxide) coated area of heterojunction solar cell by using same |
| CN114188437A (en) * | 2021-10-26 | 2022-03-15 | 晋能清洁能源科技股份公司 | Plate type support plate structure for amorphous silicon deposition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105420692A (en) | Silicon slice support plate for lower film coating | |
| US8980006B2 (en) | Apparatus for chemical vapor deposition | |
| TWI425109B (en) | Apparatus for chemical vapor deposition | |
| US9153466B2 (en) | Wafer boat | |
| CN206505899U (en) | A kind of tubular film plating Horizontal graphite boat | |
| US9437429B2 (en) | Polycrystalline silicon manufacturing apparatus and polycrystalline silicon manufacturing method | |
| JP2018518592A (en) | Heat shield ring for high growth rate EPI chamber | |
| CN205258601U (en) | A silicon chip support plate for $descending coating film | |
| CN206502866U (en) | A kind of adjustable graphite boat in stuck point position | |
| WO2023061178A1 (en) | Gluing nozzle and gluing device | |
| CN201495284U (en) | Support hook for coating of silicon wafer | |
| CN208637394U (en) | A kind of the graphite frame apparatus and cell piece filming equipment of PERC cell piece | |
| CN215800045U (en) | Crucible side structure and single crystal furnace thermal field | |
| CN214218856U (en) | Film coating device | |
| CN104936926A (en) | Glass plate housing body and method for manufacturing chemically strengthened glass | |
| CN211142196U (en) | Electrolytic tank for electrolytic copper foil | |
| CN108165955A (en) | A kind of novel graphite boat | |
| CN109964310A (en) | Electric hybrid board carrier | |
| CN202134568U (en) | Metal support plate | |
| CN207938725U (en) | Thermal conductive silicon rubber cushion and battery modules | |
| CN202217651U (en) | Pothook of support plate for PECVD (plasma enhanced chemical vapor deposition) | |
| WO2013024314A1 (en) | Gas distribution system for a reaction chamber | |
| CN202189824U (en) | Glass fiber reinforced plastic loading board | |
| CN216838275U (en) | Improve graphite plate and production facility of epitaxial wafer back roughness | |
| CN213468112U (en) | Color paste oscillation jacket device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160323 |
|
| RJ01 | Rejection of invention patent application after publication |