CN205258601U - A silicon chip support plate for $descending coating film - Google Patents
A silicon chip support plate for $descending coating film Download PDFInfo
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- CN205258601U CN205258601U CN201521128976.3U CN201521128976U CN205258601U CN 205258601 U CN205258601 U CN 205258601U CN 201521128976 U CN201521128976 U CN 201521128976U CN 205258601 U CN205258601 U CN 205258601U
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Abstract
The utility model belongs to the technical field of silicon chip support plate technique and specifically relates to a silicon chip support plate for $descending coating film is related to. The utility model provides a pair of a silicon chip support plate for $descending coating film, silicon chip support plate are at least including an unit, every unit includes: frame and stationary blade are provided with at least one stationary blade on every frame of frame, the one end of stationary blade fix the frame downside on the surface, the other end of stationary blade along the frame under the side surface to the inboard interior side surface that extends and stretch out the frame of frame. Every unit of this silicon chip support plate comprises frame and stationary blade, and the stationary blade setting is in the bottom of frame, and the upper surface of stationary blade and the lower surface parallel and level of frame do not have the difference in height between the two. When the silicon chip adopted down the coating film, the silicon chip was placed in the frame, the coating film face and the stationary blade contact of silicon chip, and the stationary blade supports the silicon chip, and the lower surface of silicon chip is in the coplanar with the lower surface of frame, does not have the difference in height between silicon chip and the support plate, prevents the diffraction phenomenon, has still solved technical problem such as sediment.
Description
Technical field
The utility model relates to the manufacturing technology field of crystal silicon solar batteries sheet, especially relates to a kind of silicon chip support plate for lower plated film.
Background technology
Existing crystal silicon battery PECVD is in coating process, and the plated film of silicon chip on loading plate is divided into plated film and two kinds of modes of lower plated film, and plated film mainly refers to plating silicon nitride and/or Al2O3Film.
Plated film in what is called, refers to that the to be coated of silicon chip faces up, and the gas of plated film flows out down. Lower plated film refers to that the to be coated of silicon chip faces down, and the gas of plated film flows out upward. Plated film refers to NH3And SiH4Mist, under uniform temperature and pressure chemical vapour deposition (CVD) to silicon chip to be coated, synthesizing silicon nitride film; Or trimethyl aluminium (TMA) and O2Under uniform temperature and pressure, reaction generates Al2O3Film, realizes plated film.
In prior art, the main mode that adopts upper plated film, in coating process, ion source electrode and cavity around also can plated films, and the time has been grown, and the too thick meeting of film is fallen down with disintegrating slag, causes silicon chip to become waste product. Meanwhile, on ion gun, plated film also can cause plasma properties to be drifted about, and affects the quality of follow-up coating process.
Lower plated film mode is mainly used by two kinds of equipment of Germany, and a kind of is the SiNA equipment that MeyerBurger produces, and another one is MAiA equipment; Plasma is below silicon chip (support plate), and on plasma electrode, embrittlement silicon nitride disintegrating slag falls in cavity like this, instead of stays silicon chip film-coated. But for silicon chip is fixed on support plate, specifically at the edge of support plate, latch hook device is set, need to descends the silicon chip of plated film to fix, concrete schematic diagram as shown in Figure 1.
Fig. 1 lower left corner has indicated the hook device of the fixing silicon chip of existing lower plated film support plate, can there is a serious problem in arranging like this, be can have certain gap between silicon chip and support plate, exist in the situation in gap, in the process of lower plated film, gas can be walked around gap, thereby makes the back side of silicon chip also have part by plated film, and industry is referred to as " diffraction "; Another one problem is, hooking device is on loading plate basis, after add up, can there is unstable under high-temperature condition, mechanically unstable problem.
Utility model content
The purpose of this utility model is to provide a kind of silicon chip support plate for lower plated film, to solve the diffraction and the unsettled technical problem that exist in prior art.
A kind of silicon chip support plate for lower plated film that the utility model provides, described silicon chip support plate at least comprises a unit;
Each unit comprises: framework and stator, on each frame of described framework, be provided with at least one stator, one end of described stator is fixed on the surface of described framework underside, and the other end of described stator extends and stretch out the inner surface of described framework to the inner side of described framework along described framework underside surface.
The silicon chip support plate for lower plated film that the utility model provides, each unit of this silicon chip support plate is made up of framework and stator, stator is arranged on the bottom of framework, and the upper surface of stator is concordant with the lower surface of framework, between the upper surface of stator and the lower surface of framework without difference in height. When silicon chip film-coated, silicon chip is placed in framework, the coated surface of silicon chip contacts with stator, stator supporting silicon chip, the lower surface of silicon chip and the lower surface of framework be in same plane, and plated film adopts lower plated film, between silicon chip and support plate base plane without difference in height, can prevent like this diffraction phenomenon, also solve the technical problems such as slag.
Each frame of framework multiple stators are set, as 1,2,3,5,8,10 etc., while making to place silicon chip, the better supporting silicon chip of stator.
For cost-saving, and the stability of maintenance silicon chip, preferably, on each frame of described framework, be provided with 1-5 stator.
More preferably, on each frame of described framework, be provided with 1-2 stator.
Silicon chip is placed in each unit of silicon chip support plate, stator is used for supporting silicon chip, meanwhile, and when plated film, gas also can be ejected into the position of stator, the silicon chip that makes stator position can plated film, but because silicon chip is in the processing and use procedure in later stage, marginal portion is not have practical use, so allow stator to exist, but area is as far as possible little, reduce as far as possible overlapping of stator and silicon chip, reduce the loss of silicon chip film-coated area.
In order both to reach better support object, reduce again the loss of silicon chip, preferably, the length that described stator stretches out described framework inner surface is 0.2-3mm.
More preferably, to stretch out the length of described framework inner surface be 0.5-1mm to described stator.
Similarly, preferably, the width of described stator is 0.2-3mm.
More preferably, the width of described stator is 1-1.5mm.
For cost-saving time, still can reach the object of fixing silicon chip, preferably, the thickness of described stator is 0.1-2mm.
More preferably, the thickness of described stator is 0.5-1mm.
The silicon chip support plate that the utility model provides comprises multiple unit, is in order in batches silicon chip to be carried out to plated film. The unit number of silicon chip support plate can be 1,2,5,10,15,20,30,40 etc. Between unit, be arranged side by side, form array, as can be 4 × 5,4 × 6,4 × 7,4 × 8,5 × 5,5 × 6,5 × 7,5 × 8 etc.
For the ease of arranging, cost-saving, while being arranged side by side between unit, preferably, the position that different units joins shares a frame.
Frame can not be too wide, this is because frame is too wide and too thick, the weight of whole silicon chip support plate is just large, silicon chip support plate is under Action of Gravity Field, especially under hot environment, the middle part of silicon chip support plate there will be downward deformation, so thickness and the width of the frame of the framework to the each unit of silicon chip support plate also there are certain requirements. Preferably, the thickness of described frame is 4-10mm, and the width of described frame is 4-20mm.
In order to prevent silicon chip support plate generation deformation, and can realize plated film in batches, preferably, described silicon chip support plate comprises 20-64 unit, more preferably 30-40 unit. Between unit, be arranged side by side, form array, as can be 5 × 5,5 × 6,6 × 5,5 × 8 etc.
Preferably, the material of described framework and stator is any in carbon fiber, graphite, refractory ceramics. These materials are at high temperature stable, to prevent silicon chip support plate generation deformation.
Framework and stator one processing polishing moulding, has so just avoided the combination fastness problem between stator and framework under high-temperature condition.
Preferably, in preparation process, framework and the stator of described silicon chip support plate are one-body molded.
In addition, the shape of the stator in the utility model can be rectangle, square, circle, ellipse, triangle, trapezoidal, pentagon and other irregular figures.
The shape of the framework in each unit and size and need shape and the size of the silicon chip of plated film to adapt. For the ease of placing and taking out, and better prevent diffraction phenomenon, be placed on the silicon chip in the each unit of silicon chip support plate, the distance between its edge and framework can not differ too much, generally, in 1mm, is preferably 0.3-0.5mm, most preferably is 0.5mm. If the framework frame inside dimension of each unit is 157 × 157mm; The outside dimension of silicon chip is 156 × 156mm, and the distance between framework frame medial surface and silicon chip is 0.5mm, so both can make silicon chip easily pick and place, and also can better prevent diffraction phenomenon.
Compared with prior art, the beneficial effects of the utility model are:
(1) a kind of silicon chip support plate for lower plated film that the utility model provides, adopt specific stator design, while making silicon chip be placed on support plate, the lower plane of silicon chip and the lower plane of support plate are in same plane, between the two without difference in height, while adopting lower plated film mode to carry out plated film to silicon chip, prevent diffraction phenomenon, also solved the technical problems such as slag.
(2) the utility model defines the quantity of stator, length, width and the thickness of stator, both can better supporting silicon chip, and cost-saving greatly again, cut the waste.
(3) the utility model also defines thickness and the width of frame, prevents silicon chip support plate generation deformation, keeps the stability of silicon chip support plate.
(4) the utility model also defines the material of framework and stator, to keep the stability of silicon chip support plate performance.
(5) silicon chip support plate that the utility model provides is one-body molded, has avoided the combination fastness problem between stator and framework under high-temperature condition.
(6) in use, the size and shape of silicon chip and framework are suitable mutually for the silicon chip support plate that the utility model provides, the distance between edge and the framework of silicon chip in 1mm, prevented diffraction phenomenon, silicon chip support plate good stability, is easy to pick and place silicon chip.
Brief description of the drawings
In order to be illustrated more clearly in the utility model detailed description of the invention or technical scheme of the prior art, to the accompanying drawing of required use in detailed description of the invention or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is embodiments more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the schematic diagram of existing silicon chip support plate in the utility model background technology;
In unit of silicon chip support plate that Fig. 2 provides for the utility model embodiment, each frame has the schematic diagram of 1 stator;
The frame that Fig. 3 provides for the utility model embodiment and the cross sectional representation of stator connecting portion;
In unit of silicon chip support plate that Fig. 4 provides for the utility model embodiment, each frame has the schematic diagram of 2 stators;
In unit of silicon chip support plate that Fig. 5 provides for the utility model embodiment, each frame has the schematic diagram of 3 stators;
The schematic diagram of the silicon chip support plate that Fig. 6 provides for the utility model embodiment;
Reference numeral:
1-framework; 2-stator; The cross section of 3-framework; The cross section of 4-stator.
Detailed description of the invention
Below in conjunction with accompanying drawing, the technical solution of the utility model is clearly and completely described, obviously, described embodiment is the utility model part embodiment, instead of whole embodiment. Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.
In description of the present utility model, it should be noted that, orientation or the position relationship of the instructions such as term " " center ", " on ", D score, " left side ", " right side ", " vertically ", " level ", " interior ", " outward " be based on orientation shown in the drawings or position relationship; be only the utility model and simplified characterization for convenience of description; instead of the device of instruction or hint indication or element must have specific orientation, with specific orientation structure with operate, therefore can not be interpreted as restriction of the present utility model. In addition, term " first ", " second ", " the 3rd " be only for describing object, and can not be interpreted as instruction or hint relative importance.
In description of the present utility model, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be also electrical connection; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals. For the ordinary skill in the art, can concrete condition understand the concrete meaning of above-mentioned term in the utility model.
A kind of silicon chip support plate for lower plated film that the utility model provides, as shown in Fig. 2-Fig. 6, described silicon chip support plate at least comprises a unit;
Each unit comprises: framework 1 and stator 2, on each frame of described framework 1, be provided with at least one stator 2, one end of described stator 2 is fixed on the surface of described framework 1 downside, and the other end of described stator 2 extends and stretch out the inner surface of described framework 1 to the inner side of described framework 1 along described framework 1 downside surface.
The silicon chip support plate for lower plated film that the utility model provides, each unit of this silicon chip support plate is made up of framework 1 and stator 2, stator 2 is arranged on the bottom of framework 1, specifically as shown in Figure 3, can find out according to the cross section 4 of the cross section 3 of the framework of Fig. 3 and stator, seamless between the lower surface of the upper surface of stator 2 and framework 1, when silicon chip is placed, the lower plane of silicon chip and the lower plane of framework 1 are in same plane, plated film adopts lower plated film, between silicon chip and support plate without difference in height, can well prevent diffraction phenomenon, the technical problems such as slag are also solved.
Silicon chip is placed in each unit of silicon chip support plate, stator 2 is for supporting silicon chip, meanwhile, and when plated film, gas also can be ejected into the position of stator, the silicon chip that makes stator 2 positions can plated film, but because silicon chip is in the processing and use procedure in later stage, marginal portion is not have practical use, so allow stator 2 to exist, but as far as possible little, reduce as far as possible overlapping of stator 2 and silicon chip, to reduce the loss of silicon chip.
Therefore, the shape of framework 1 can arrange accordingly according to the shape of silicon chip, and it is consistent that both reach shape, better to mate, facilitates plated film, saves the waste area of silicon chip.
Each frame of framework 1 multiple stators 2 are set, each frame arranges 1 stator 2 as shown in Figure 2, each frame arranges 2 stators 2 as shown in Figure 4, each frame arranges 3 stators 2 as shown in Figure 5, in addition, each frame can also arrange 5,8,10 stators 2 etc., while making to place silicon chip, the better supporting silicon chip of stator 2, keeps it steadily. Stator 2 can equal distribution, also can random distribution.
For cost-saving, and the stability of maintenance silicon chip, preferably, on each frame of described framework 1, be provided with 1-5 stator 2.
More preferably, on each frame of described framework 1, be provided with 1-2 stator 2.
In order both to reach better support object, reduce again the loss of silicon chip, preferably, the length that described stator 2 stretches out described framework 1 inner surface is 0.2-3mm. As the length of stator 2 can be set to 0.2mm, 0.5mm, 0.8mm, 1.0mm, 1.5mm, 2.0mm, 2.5mm, 3mm etc.
More preferably, to stretch out the length of described framework inner surface be 0.5-1mm to described stator 2. As the length of stator 2 can be set to 0.5mm, 0.6mm, 0.8mm, 1.0mm etc.
Similarly, in order both to reach better support object, reduce again the loss of silicon chip, preferably, the width of described stator 2 is 0.2-3mm. As the width of stator 2 can be set to 0.2mm, 0.5mm, 0.8mm, 1.0mm, 1.5mm, 2.0mm, 2.5mm, 3mm etc.
More preferably, the width of described stator 2 is 1-1.5mm. As the width of stator 2 can be set to 1mm, 1.2mm, 1.4mm, 1.5mm, 1.5mm etc.
For cost-saving time, take into account the support force that provides certain simultaneously, still can meet the effect of supporting silicon chip less in the situation that at stator 2 length and width, preferably, the thickness of described stator 2 is 0.1-2mm. As the thickness of stator 2 can be set to 0.1mm, 0.2mm, 0.5mm, 0.8mm, 1.0mm, 1.5mm, 2.0mm etc.
More preferably, the thickness of described stator 2 is 0.5-1mm.
The silicon chip support plate that the utility model provides comprises multiple unit, specifically as shown in Figure 6, silicon chip support plate comprise multiple unit realize in batches silicon chip is carried out to plated film, saving program and cost. The unit number of silicon chip support plate can be 1,2,5,10,15,20,30,40 etc. Between unit, be arranged side by side, form array, as can be 2 × 5,4 × 4,5 × 6,4 × 8,5 × 8 etc. If Fig. 5 is 5 × 5 arrays.
For the ease of arranging, cost-saving, while being arranged side by side between unit, preferably, the position that different units joins shares a frame.
Frame can not be too wide, and this is because frame is too wide and too thick, and the weight of whole silicon chip support plate is just large, silicon chip support plate is under Action of Gravity Field, and especially, under hot environment, the middle part of silicon chip support plate there will be downward deformation, so thickness and the width of frame also there are certain requirements. Preferably, the thickness of described frame is 4-10mm, and the width of described frame is 4-20mm. If the thickness of frame can be 4mm, 5mm, 7mm, 9mm, 10mm etc.; The width of frame can be 4mm, 8mm, 10mm, 15mm, 20mm etc. Particularly, in certain embodiments, the thickness of frame is 4mm, and the width of frame is 10mm; In certain embodiments, the thickness of frame is 8mm, and the width of frame is 20mm; In certain embodiments, the thickness of frame is 10mm, and the width of frame is 15mm; In certain embodiments, the thickness of frame is 6mm, and the width of frame is 6mm.
In order to prevent silicon chip support plate generation deformation, and can realize plated film in batches, preferably, described silicon chip support plate comprises 20-60 unit, more preferably 30-40 unit. Between unit, be arranged side by side, form array, as can be 5 × 5,5 × 6,6 × 5,4 × 8 etc.
Preferably, the material of described framework 1 and stator 2 is any in carbon fiber, graphite, refractory ceramics. These materials are at high temperature stable, to prevent silicon chip support plate generation deformation.
The 2 one polishing moulding of framework 1 and stator, have so just avoided the combination fastness problem between stator and framework under high-temperature condition.
Preferably, in preparation process, framework 1 and the stator 2 of described silicon chip support plate are one-body molded.
In addition, the shape of the stator 2 in the utility model can be rectangle, square, circle, ellipse, triangle, trapezoidal, pentagon and other irregular figures.
The shape of the framework 1 in each unit and size are suitable mutually with shape and the size of the silicon chip of plated film. For the ease of placing and taking out, and better prevent diffraction phenomenon, be placed on the silicon chip in the each unit of silicon chip support plate, the distance between its edge and framework 1 can not differ too much, generally, in 1mm, is preferably 0.3-0.5mm, most preferably is 0.5mm. If the framework frame inside dimension of each unit is 157 × 157mm; The outside dimension of silicon chip is 156 × 156mm, and the distance between framework frame medial surface and silicon chip is 0.5mm, so both can make silicon chip easily place, and also can better prevent diffraction phenomenon.
In summary, the silicon chip support plate that the utility model provides, adopts exotic material as the machine-shaping of carbon fiber entirety, does not need to use metal hanger to fix silicon chip as other carbon fiber support plates; The utility model adopts special stator, and one machine-shaping makes accomplish ± 1mm of carbon fiber support plate frame and silicon chip flatness, reduces the diffraction of coating process, has optimized coating process; The silicon chip support plate that the utility model provides can arrange sizes support plate, and for example 5 × 8 support plates, have stronger versatility.
The beneficial effect that the utility model reaches is as follows:
(1) the utility model adopts a kind of silicon chip support plate for lower plated film prepared by the design of specific stator 2, while making silicon chip be placed on support plate, the lower plane of silicon chip and the lower plane of support plate are in same plane, between the two without difference in height, while adopting lower plated film mode to carry out plated film to silicon chip, prevent diffraction phenomenon, also solved the technical problems such as slag.
(2) the utility model defines the quantity of stator 2, length, width and the thickness of stator 2, both can better supporting silicon chip, and cost-saving greatly again, cut the waste.
(3) the utility model also defines thickness and the width of the frame of framework 1, prevents silicon chip support plate generation deformation, makes silicon chip support plate stable performance.
(4) the utility model also defines the material of framework 1 and stator 2, to keep the stability of silicon chip support plate performance.
(5) silicon chip support plate that the utility model provides is one-body molded, has avoided the combination fastness problem between stator 2 and framework 1 under high-temperature condition.
(6) in use, the size and shape of silicon chip and framework are suitable mutually for the silicon chip support plate that the utility model provides, the distance between edge and the framework of silicon chip in 1mm, prevented diffraction phenomenon, silicon chip support plate good stability, is easy to pick and place silicon chip.
Finally it should be noted that: above each embodiment, only in order to the technical solution of the utility model to be described, is not intended to limit; Although the utility model is had been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or some or all of technical characterictic is wherein equal to replacement; And these amendments or replacement do not make the essence of appropriate technical solution depart from the scope of the each embodiment technical scheme of the utility model.
Claims (10)
1. for a silicon chip support plate for lower plated film, it is characterized in that, described silicon chip support plate extremelyComprise less a unit;
Each unit comprises: framework and stator, be provided with on each frame of described frameworkAt least one stator, one end of described stator is fixed on the surface of described framework undersideUpper, the other end of described stator prolongs to the inner side of described framework along described framework underside surfaceStretch and stretch out the inner surface of described framework.
2. silicon chip support plate according to claim 1, is characterized in that, described frameworkOn each frame, be provided with 1-5 stator.
3. silicon chip support plate according to claim 2, is characterized in that, described frameworkOn each frame, be provided with 1-2 stator.
4. silicon chip support plate according to claim 1, is characterized in that, described statorThe length of stretching out described framework inner surface is 0.2-3mm.
5. silicon chip support plate according to claim 4, is characterized in that, described statorThe length of stretching out described framework inner surface is 0.5-1mm.
6. silicon chip support plate according to claim 1, is characterized in that, described statorWidth be 0.2-3mm.
7. silicon chip support plate according to claim 1, is characterized in that, described statorThickness be 0.1-2mm.
8. according to the silicon chip support plate described in claim 1-7 any one, it is characterized in that, noThe position joining with unit shares a frame.
9. silicon chip support plate according to claim 8, is characterized in that, described frameThickness is 4-10mm, and the width of described frame is 4-20mm.
10. silicon chip support plate according to claim 9, is characterized in that, described silicon chipSupport plate comprises 20-64 unit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521128976.3U CN205258601U (en) | 2015-12-29 | 2015-12-29 | A silicon chip support plate for $descending coating film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521128976.3U CN205258601U (en) | 2015-12-29 | 2015-12-29 | A silicon chip support plate for $descending coating film |
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| CN205258601U true CN205258601U (en) | 2016-05-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420692A (en) * | 2015-12-29 | 2016-03-23 | 常州比太科技有限公司 | Silicon slice support plate for lower film coating |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420692A (en) * | 2015-12-29 | 2016-03-23 | 常州比太科技有限公司 | Silicon slice support plate for lower film coating |
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