CN102881797A - 具有电流扩展结构的氮化镓基发光二极管 - Google Patents
具有电流扩展结构的氮化镓基发光二极管 Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 24
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- 229910052759 nickel Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
本发明公开了提供一种具有电流扩展结构的氮化镓基发光二极管。所述LED结构包含衬底、位于衬底之上的发光外延层、位于发光外延层之上的电流扩展结构,且所述电流扩展结构包含透明电极扩展条及附在透明电极扩展条侧壁的金属电极扩展条。本发明采用该电流扩展结构,不仅可以改善电流扩展效果,减少电极遮光,增加出光效率,还可以起到避免电压(Vf)高的作用。
Description
技术领域
本发明涉及发光二极管,更具体地是具有电流扩展结构的氮化镓基发光二极管。
背景技术
LED发光二极管是一种固态的半导体器件,它可以直接把电转化为光。LED具有无污染、亮度高、功耗低、寿命长、工作电压低、易小型化等优点,被视为“绿色照明光源”的明日之星。为了提高LED发光二极管的出光效率,人们想了许多办法。比如,当前市场上出现了许多亮度较高的ITO芯片的LED,GaN 基白光LED中如果用ITO替代Ni/Au作为P型电极芯片的亮度要比采用通用电极的芯片高20%~30%。在众多可作为透明电极(TCL)的材料中,诸如:氧化铟锡(ITO)、氧化镉锡(CTO)、氧化铟(InO)和氧化锌(ZnO)等,均可使用于提高电流分散效果,其中ITO(Indium Tin Oxide 氧化铟锡)是被最广泛应用的一种,ITO薄膜即铟锡氧化物半导体透明导电膜, 通常有两个性能指标: 电阻率和透光率,由于ITO可同时具有低电阻率及高光穿透率的特性,符合了导电性及透光性良好的要求。与其它透明的半导体导电薄膜相比,ITO具有良好的化学稳定性和热稳定性。对衬底具有良好的附着性和图形加工特性。
图案化电极是另一种常用来改善电流扩展效应的方法。此方法是将电极自接点向外延伸、P与N电极彼此交叉错合、或于接点周围形成点状、网状电极或其他图案以期电流可以透过此图案化电极均匀分散至PN结。为形成图案化电极,通常需要将电极材料覆盖于更多发光二极管的上表面。但是,图案化电极使用的材料通常为遮光金属,因此会大幅影响发光二极管的发光效率。
专利申请号为CN200710091743.4的发明专利申请公开了一种具有叠合透明电极的半导体发光装置。该申请涉及一种半导体发光装置,包含衬底、位于衬底上方并具有远离衬底的第一表面的半导体外延层、位于第一表面上方的第一透光导电层、及位于第一透光导电层上方的第二透光导电层,其中第二透光导电层的第二表面的面积小于第一透光导电层的第一表面的面积。该发明提出采用透明电极作为电流扩展条,虽然可以增进电流分散的效果,减少电极遮光,增加出光亮度,但是容易造成LED芯片电压(Vf)高的后果,因此目前业内仍然主要采用Au金属或Au合金作为电流扩散的材料。
发明内容
为解决上述发光二极管的所存在的问题,本发明旨在提供一种具有电流扩展结构的氮化镓基发光二极管。
本发明解决其技术问题所采用的技术方案是:具有电流扩展结构的氮化镓基发光二极管,所述LED结构包含衬底、位于衬底之上的发光外延层、位于发光外延层之上的电流扩展结构,且所述电流扩展结构包含透明电极扩展条及附在透明电极扩展条侧壁的金属电极扩展条。本发明采用该电流扩展结构,不仅可以改善电流扩展效果,减少电极遮光,增加出光效率,还可以起到避免电压(Vf)高的作用。
根据本发明,优选的是,所述发光外延层之上还可以先形成透明导电层,再形成电流扩展结构。
根据本发明,优选的是,所述金属电极扩展条位于透明电极扩展条的单侧壁或者双侧壁。
根据本发明,优选的是,所述衬底选用蓝宝石(Al2O3)、碳化硅(SiC)、硅(Si)、氮化镓(GaN)中的一种或其组合。
根据本发明,优选的是,所述发光外延层包括N-GaN层、发光层和P-GaN层。
根据本发明,优选的是,所述透明导电层选用氧化铟锡(ITO)、氧化锌(ZnO)、氧化镉锡(CTO)、氧化铟(InO)、铟(In)掺杂氧化锌(ZnO)、铝(Al)掺杂氧化锌(ZnO)、镓(Ga)掺杂氧化锌(ZnO)中的一种或其组合。
根据本发明,优选的是,所述透明电极扩展条选用氧化铟锡(ITO)、氧化锌(ZnO)、氧化镉锡(CTO)、氧化铟(InO)、铟(In)掺杂氧化锌(ZnO)、铝(Al)掺杂氧化锌(ZnO)、镓(Ga)掺杂氧化锌(ZnO)中的一种或其组合。
根据本发明,优选的是,所述金属扩展条选用金(Au)或镍金合金(Ni/Au)或铬金合金(Cr/Au)或铬铂金合金(Cr/Pt/Au)。
根据本发明,优选的是,所述透明电极扩展条的厚度为0.001~2um。
根据本发明,优选的是,所述金属电极扩展条的厚度为0.001~2um。
根据本发明,优选的是,所述金属电极扩展条的宽度为0.001~0.5um。
与现有技术相比,本发明的有益效果在于:(1)在透明电极扩展条侧壁形成金属电极扩展条,起电流扩展作用,避免单纯透明电极扩展条容易使得芯片电压偏高的现象;(2)透明电极扩展条的上表面无金属电极扩展条遮光,大大增加了出光效率;(3)附在透明电极扩展条侧壁的金属电极扩展条宽度很小,不易倾斜翘边,保留电流扩展作用,且减少电极遮光,而常规的单纯金属电极扩展条一般宽5um以上。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1为根据本发明实施的具有电流扩展结构的氮化镓基发光二极管的立体示意图。
图2为图1的剖面示意图。
图中各标号表示:
100:衬底;101:发光外延层;102:透明导电层;103:透明电极扩展条;104:金属电极扩展条;105:P电极;106:N电极;107:N型限制层;108:发光层;109:P型限制层。
具体实施方式
下面实施例公开了一种具有电流扩展结构的氮化镓基发光二极管,包含衬底、发光外延层及电流扩展结构。其中,电流扩展结构包括透明电极扩展条和附在透明电极扩展条侧壁的金属电极扩展条。
其中,衬底为可生长发光外延层之用,如用选用蓝宝石(Al2O3)、碳化硅(SiC)、硅(Si)、氮化镓(GaN)中的一种或其组合用于进行外延生长;也可为支撑基板,其一般为散热类材料,如陶瓷基板。
在本发明的一些实施例中,可先在发光外延层表面上形成透明导电层,其材料选用氧化铟锡(ITO)、氧化锌(ZnO)、氧化镉锡(CTO)、氧化铟(InO)、铟(In)掺杂氧化锌(ZnO)、铝(Al)掺杂氧化锌(ZnO)、镓(Ga)掺杂氧化锌(ZnO)中的一种或其组合;然后再在透明导电层上制作电流扩展结构。
在电流扩展结构中,金属电极扩展条或位于透明电极扩展条的单侧壁或者双侧壁。其中,透明电极扩展条的厚度为0.001~2um,其材料与可与前述透明导电层的材料一致;金属扩展条选用金(Au)或镍金合金(Ni/Au)或铬金合金(Cr/Au)或铬铂金合金(Cr/Pt/Au),其厚度小于或等于透明电极扩展条的厚度、可取0.001~2um,宽度很小,可取0.001~0.5um。
以下将结合附图及实施例来详细说明本发明的实施方式,借此对本发明如何应用技术手段来解决技术问题,并达成技术效果的实现过程能充分理解并据以实施。
实施例
如图1和2所示,具有电流扩展结构的氮化镓基发光二极管,包括最底层为蓝宝石衬底100;位于衬底100之上的发光外延层101,发光外延层从下至上依次由N-GaN层107、发光层108和P-GaN层109组成;位于发光外延层101之上的ITO透明导电层102;位于透明导电层102之上的电流扩展结构,且所述电流扩展结构包括ITO透明电极扩展条103及附在透明电极扩展条103侧壁的Au金属电极扩展条104;位于ITO透明导电层102之上的P电极105及位于N-GaN层107之上的N电极106。
ITO透明电极扩展条103可采用反应磁控溅射,再剥离的方法制作,厚度为1um;附在ITO透明电极扩展条103单侧壁的Cr/Au金属电极扩展条104,宽度为0.3um,厚度为1um。
综上所述,本发明的主要设计精神在于:在透明电极扩展条侧壁形成金属电极扩展条,宽度很小,不易倾斜翘边,起电流扩展作用,避免单纯透明电极扩展条容易使得芯片电压偏高的现象;透明电极扩展条的上表面无金属电极扩展条遮光,大大增加了出光效率,该结构尤为适用于具有较多电极扩展条的大功率LED芯片。
Claims (10)
1.具有电流扩展结构的氮化镓基发光二极管,包括:衬底;位于衬底之上的发光外延层;位于发光外延层之上的电流扩展结构,且所述电流扩展结构包含透明电极扩展条及附在透明电极扩展条侧壁的金属电极扩展条。
2.根据权利要求1所述的具有电流扩展结构的氮化镓基发光二极管,其特征在于:还包括透明导电层,其位于发光外延层之上,且所述电流扩展结构位于该透明导电层之上。
3.根据权利要求1或2所述的具有电流扩展结构的氮化镓基发光二极管,其特征在于:所述金属电极扩展条位于透明电极扩展条的单侧壁或者双侧壁。
4.根据权利要求1或2所述的具有电流扩展结构的氮化镓基发光二极管,其特征在于:所述衬底选用蓝宝石(Al2O3)、碳化硅(SiC)、硅(Si)或者氮化镓(GaN)。
5.根据权利要求2所述的具有电流扩展结构的氮化镓基发光二极管,其特征在于:所述透明导电层选用氧化铟锡(ITO)、氧化锌(ZnO)、氧化镉锡(CTO)、氧化铟(InO)、铟(In)掺杂氧化锌(ZnO)、铝(Al)掺杂氧化锌(ZnO)、镓(Ga)掺杂氧化锌(ZnO)中的一种或其组合。
6.根据权利要求1或2所述的具有电流扩展结构的氮化镓基发光二极管,其特征在于:所述透明电极扩展条选用氧化铟锡(ITO)、氧化锌(ZnO)、氧化镉锡(CTO)、氧化铟(InO)、铟(In)掺杂氧化锌(ZnO)、铝(Al)掺杂氧化锌(ZnO)、镓(Ga)掺杂氧化锌(ZnO)中的一种或其组合。
7.根据权利要求1或2所述的具有电流扩展结构的氮化镓基发光二极管,其特征在于:所述金属扩展条选用金(Au)或镍金合金(Ni/Au)或铬金合金(Cr/Au)或铬铂金合金(Cr/Pt/Au)。
8.根据权利要求1或2所述的具有电流扩展结构的氮化镓基发光二极管,其特征在于:所述透明电极扩展条的厚度为0.001~2um。
9.根据权利要求1或2所述的具有电流扩展结构的氮化镓基发光二极管,其特征在于:所述金属电极扩展条的厚度为0.001~2um。
10.根据权利要求1或2所述的具有电流扩展结构的氮化镓基发光二极管,其特征在于:所述金属电极扩展条的宽度为0.001~0.5um。
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