CN102856354B - 石墨烯结构及其制造方法、石墨烯器件及其制造方法 - Google Patents

石墨烯结构及其制造方法、石墨烯器件及其制造方法 Download PDF

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CN102856354B
CN102856354B CN201210011942.0A CN201210011942A CN102856354B CN 102856354 B CN102856354 B CN 102856354B CN 201210011942 A CN201210011942 A CN 201210011942A CN 102856354 B CN102856354 B CN 102856354B
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崔秉龙
李银京
黄同穆
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Samsung Electronics Co Ltd
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Abstract

本发明提供石墨烯结构及其制造方法、石墨烯器件及其制造方法。该石墨烯结构包括：基板；生长层，形成在基板上并具有暴露的侧表面；以及石墨烯层，从生长层的侧表面生长。

Description

石墨烯结构及其制造方法、石墨烯器件及其制造方法
技术领域
本公开涉及石墨烯，更具体地，涉及石墨烯结构和制造石墨烯结构的方法以及石墨烯器件和制造石墨烯器件的方法。
背景技术
碳纳米管(CNT)自上世纪九十年代起已经流行，近来正在对石墨烯积极开展研究，石墨烯可用于各种领域，包括纳米电子、光电子和化学传感器。石墨烯是具有数nm的厚度且其中碳原子二维排列的薄膜材料并具有非常高的电导率。除了与硅相比更高电荷迁移率的电特性之外，石墨烯是化学稳定的并具有大的表面积。
同时，为了使用石墨烯来形成晶体管的沟道，石墨烯的带隙需要具有半导体特性，因此石墨烯需要具有约数nm的非常小的宽度。然而，如果石墨烯通过使用图案化或蚀刻方法形成为具有小的宽度，则石墨烯可能不易以期望形状形成在大面积上。此外，当诸如晶体管的石墨烯器件通过使用具有小宽度的石墨烯制造时，石墨烯可能不易接合到电极。
发明内容
本发明提供石墨烯结构和制造该石墨烯结构的方法以及石墨烯器件和制造该石墨烯器件的方法。
额外方面将在以下的描述中部分阐述，并将部分地从该描述变得显然，或者可以通过实践给出的实施例而习知。
根据本发明的一方面，一种石墨烯结构包括：基板；生长层，形成在基板上并具有暴露的侧表面；以及石墨烯层，从生长层的侧表面生长。
生长层可以包括金属或锗(Ge)。石墨烯结构还可以包括形成得覆盖生长层的上表面的保护层。
石墨烯层可具有数nm的宽度。
石墨烯结构还可以包括：至少一个生长层和至少一个保护层，交替堆叠在保护层上且具有暴露的侧表面的；以及至少一个石墨烯层，从至少一个生长层的侧表面生长。
根据本发明的另一方面，一种制造石墨烯结构的方法包括：在基板上交替形成至少一个生长层和至少一个保护层；形成具有预定形状的凹槽以暴露至少一个保护层和至少一个生长层的侧表面以及基板的上表面；以及从至少一个生长层的被凹槽暴露的侧表面生长至少一个石墨烯层。
该至少一个石墨烯层可以通过使用化学气相沉积(CVD)法从至少一个生长层的暴露侧表面生长。
根据本发明的另一方面，一种石墨烯器件包括：至少一个沟道，包括第一石墨烯层；以及第一和第二电极，连接到该至少一个沟道的两端并包括第二石墨烯层。
第一和第二电极可以与至少一个沟道一体地形成。这里，第一石墨烯层可以垂直于第二石墨烯层形成并可以电连接到第二石墨烯层。
多个沟道可以形成在第一和第二电极之间，并可以沿水平方向和垂直方向中的至少一个对准。
根据本发明的另一方面，一种制造石墨烯器件的方法包括：在基板上依次形成生长层和保护层；形成至少一个第一凹槽以及第二和第三凹槽，该至少一个第一凹槽用于暴露生长层和保护层两者的侧表面以及基板的上表面，该第二和第三凹槽用于暴露保护层的侧表面和生长层的上表面；通过从生长层的被至少一个第一凹槽暴露的侧表面生长至少一个第一石墨烯层，形成至少一个沟道；以及通过从生长层的被第二和第三凹槽暴露的上表面生长第二石墨烯层，形成第一和第二电极。
第二和第三凹槽可以连接到至少一个第一凹槽的两端。第一和第二电极可以与至少一个沟道一体形成。
第一和第二石墨烯层可以使用化学气相沉积(CVD)法从生长层的暴露侧表面和上表面生长。
附图说明
这些和/或其他方面将从以下结合附图对实施例的描述而变得明显且更易于理解，附图中：
图1、图2A和2B以及图3A至3C是用于描述根据本发明一实施例的制造石墨烯结构的方法的图；
图4是根据本发明另一实施例的石墨烯结构的剖视图；
图5、图6A至6D以及图7A至7D是用于描述根据本发明一实施例的制造石墨烯器件的方法的图；以及
图8是根据本发明另一实施例的石墨烯器件的平面图。
具体实施方式
现在将详细参照实施例，实施例的示例示于附图中，附图中相似的附图标记始终指示相似的元件。在这点上，当前的实施例可以具有不同的形式而不应解释为局限于这里给出的描述。因而，下面参照附图描述实施例仅用于解释本发明的各方面。
图1、图2A和2B以及图3A至3C是用于描述根据本发明一实施例的制造石墨烯结构的方法的图。
图1是剖视图，示出生长层120和保护层130依次形成在基板110上。参照图1，一开始，生长层120形成在基板110上。基板110可以是例如硅基板，也可以由各种材料形成。生长层120可以通过以薄膜形式在基板110上沉积预定材料而形成。生长层120是石墨烯层140(见图3A)从其生长的层，并可以由例如金属或锗(Ge)形成。这里，金属可以包括但不限于过渡金属诸如镍(Ni)、铂(Pt)、钌(Ru)、钴(Co)、铱(Ir)和铜(Cu)。并且，如果生长层120由Ge形成，则石墨烯层140可以以未污染状态生长均匀的厚度。生长层120可以具有例如约数nm的厚度。如后面将描述的那样，生长层120的厚度决定石墨烯层140的宽度W。然后，保护层130形成在生长层120的上表面上。保护层130可以通过在生长层120的上表面上沉积例如硅氧化物而形成。同时，保护层130也可以由硅氧化物之外的材料形成。
图2A是透视图，示出凹槽150形成在保护层130和生长层120中。图2B是沿图2A的线IIB-IIB’截取的剖视图。
参照图2A和2B，通过依次蚀刻保护层130和生长层120以预定形状形成凹槽150。凹槽150暴露保护层130和生长层120两者的侧表面以及基板110的上表面。凹槽150可以通过使用蚀刻掩模(未示出)蚀刻保护层130和生长层120直到基板110的上表面被暴露而形成。
图3A是透视图，示出石墨烯层140从生长层120的侧表面生长。图3B是沿图3A的线IIIB-IIIB’截取的剖视图。图3C是图3A的平面图。
参照图3A至3C，石墨烯层140从生长层120的暴露侧表面生长。也就是说，由于生长层120的侧表面被凹槽150暴露，所以石墨烯层140仅从生长层120的暴露侧表面生长。石墨烯层140可以通过使用例如化学气相沉积(CVD)法生长。由于石墨烯层140从生长层120的侧表面生长，所以石墨烯层140的宽度W与生长层120的厚度相同。这样，石墨烯层140可以具有例如约数nm的宽度。如果生长层120的厚度被调节，则可以获得具有期望宽度的石墨烯层140。
如上所述，如果生长层120的侧表面被凹槽150暴露并且石墨烯层140从生长层120的暴露侧表面生长，则具有非常小的宽度的石墨烯层140可以形成在大面积上。同时，尽管在以上描述中生长层120的两个侧表面被暴露且石墨烯层140从两个暴露的侧表面生长，但是当前实施例不限于此，生长层120的一个侧表面或者三个或更多侧表面可以通过改变凹槽150的形状而被暴露。
石墨烯器件可以通过将电极(未示出)接合到图3A至3C所示的石墨烯结构来制造。备选地，石墨烯器件可以通过将电极仅接合到从图3A至3C所示的石墨烯结构分离的石墨烯层140来制造。
图4是根据本发明另一实施例的石墨烯结构的剖视图。
参照图4，第一生长层221、第一保护层231、第二生长层222和第二保护层232依次形成在基板210上。凹槽250形成在第一生长层221、第一保护层231、第二生长层222和第二保护层232中以暴露基板210的上表面。这样，第一生长层221、第一保护层231、第二生长层222和第二保护层232的侧表面也被凹槽250暴露。第一和第二石墨烯层241和242分别从第一和第二生长层221和222的暴露侧表面生长。同时，尽管在图4中第一和第二生长层221和222以及第一和第二保护层231和232作为示例交替堆叠在基板210上，但是当前的实施例不限于此，三个或更多的生长层以及三个或更多的保护层可以交替堆叠在基板210上。
图4所示的制造石墨烯结构的方法与图1、2A和2B以及3A至3C所示的制造石墨烯结构的方法相同，除了第一和第二生长层221和222以及第一和第二保护层231和232交替堆叠在基板210上之外，因此这里将不提供其 详细描述。如上所述，在当前实施例中，具有非常小的宽度的第一和第二石墨烯层241和242可以沿垂直方向以及水平方向对准。此外，石墨烯器件可以通过将电极(未示出)接合到具有三维对准的第一和第二石墨烯层241和242的石墨烯结构来制造。
根据以上实施例，具有非常小的宽度的石墨烯可以容易地形成，并可以使用在各种器件中，诸如电子器件、光学器件、传感器、电容器和能量器件。
图5、图6A至6D和图7A至7D是用于描述根据本发明一实施例的制造石墨烯器件的方法的图。
图5是剖视图，示出生长层320和保护层330依次形成在基板310上。参照图5，一开始，生长层320形成在基板310上。基板310可以是例如硅基板，但不限于此。生长层320可以通过在基板310上以薄膜形式沉积例如金属或Ge而形成。这里，金属可以包括但不限于过渡金属诸如Ni、Pt、Ru、Co、Ir和Cu。并且，如果生长层320由Ge形成，则石墨烯可以以无污染状态生长均匀的厚度。生长层320可以具有例如约数nm的厚度。如将随后描述的那样，生长层320的厚度确定由第一石墨烯层形成的沟道343(见图7A和7B)的宽度。然后，保护层330形成在生长层320的上表面上。保护层330可以通过沉积例如硅氧化物在生长层320的上表面上而形成。
图6A是透视图，示出形成第一、第二和第三凹槽351、352和353。图6B是沿图6A的线VIB-VIB’截取的剖视图。图6C是沿图6A的线VIC-VIC’截取的剖视图。图6D是图6A的平面图。
参照图6A至6D，第一凹槽351形成在保护层330和生长层320中以暴露基板310的上表面，第二和第三凹槽352和353形成在保护层330中以暴露生长层320的上表面。这里，第二和第三凹槽352和353连接到第一凹槽351的两端。保护层330的侧表面和生长层320的侧表面也被第一凹槽351暴露，保护层330的其它侧表面也被第二和第三凹槽352和353暴露。第一、第二和第三凹槽351、352和353可以通过蚀刻保护层330以暴露生长层320的上表面以及部分蚀刻生长层320的暴露上表面以暴露基板310的上表面而形成。这里，第一、第二和第三凹槽351、352和353不限于此，可以基于各种蚀刻次序形成。
图7A是透视图，示出沟道343以及第一和第二电极341和342的形成。图7B是沿图7A的线VIIB-VIIB’截取的剖视图。图7C是沿图7A的线 VIIC-VIIC’截取的剖视图。图7D是图7A的平面图。
参照图7A至7D，石墨烯从生长层320的被第一、第二和第三凹槽351、352和353暴露的侧表面和上表面生长。更具体地，生长层320的侧表面被第一凹槽351暴露，第一石墨烯层从生长层320的暴露侧表面生长。这样，获得由第一石墨烯层形成的沟道343。沟道343可以具有与生长层320的厚度对应的约数nm的宽度。同时，如果调节生长层320的厚度，则可以形成具有期望宽度的沟道343。
第二石墨烯层从生长层320的被第二和第三凹槽352和353暴露的上表面生长。这样，获得由第二石墨烯层形成的第一和第二电极341和342。由于第一和第二石墨烯层分别从生长层320的侧表面和上表面生长，所以第一石墨烯层形成得垂直于第二石墨烯层。此外，第一和第二石墨烯层生长成彼此电连接。这样，第一和第二电极341和342可以与沟道343一体地形成。第一和第二石墨烯层可以通过使用例如CVD法生长。
如上所述，如果第一和第二石墨烯层从生长层320的被第一、第二和第三凹槽351、352和353暴露的侧表面和上表面生长，则可以获得由石墨烯形成的沟道343以及第一和第二电极341和342。这样，可以制造其中第一和第二电极341和342与沟道343一体形成的石墨烯器件。因而，可以解决当由金属形成的电极接合到由石墨烯形成的沟道时可能引起的接合误差。石墨烯器件可以用作例如晶体管。
如果基板310、生长层320和保护层330从图7A至7D所示的石墨烯器件去除，则可以制造仅包括由第一石墨烯层形成的沟道343和由第二石墨烯层形成的第一和第二电极341和342的电极集成石墨烯器件。然而，根据用途，图7A至7D所示的石墨烯器件可以原样使用。
此外，尽管在以上描述中作为示例两个沟道343形成在第一和第二电极341和342之间，但是如果第一凹槽351的形状改变，则一个或者三个或更多沟道可以形成在第一和第二电极341和342之间。
图8示出具有四个沟道443的石墨烯器件。
参照图8，四个沟道343平行形成在第一和第二电极341和342之间。制造图8所示的石墨烯器件的方法类似于图5、图6A至6D和图7A至7D所示的制造石墨烯器件的方法。
更具体地，生长层320和保护层330依次形成在基板310上，然后形成 暴露基板310的两个第一凹槽(未示出)以及暴露生长层320的第二和第三凹槽(未示出)。然后，四个沟道443通过从生长层320的被两个第一凹槽暴露的侧表面生长第一石墨烯层而形成。第一和第二电极341和342通过从生长层320的被第二和第三凹槽暴露的上表面生长第二石墨烯层而形成。这里，第一和第二电极341和342可以与四个沟道443一体形成。如上所述，如果调节第一凹槽351的形状或数目，则期望数目的沟道443可以形成在第一和第二电极341和342之间。
如上所述，可以制造其中各种数目的沟道443形成在第一和第二电极341和342之间且与第一和第二电极341和342一体形成的石墨烯器件。这样，可以增加流经沟道443的电流的量。此外，由于所有的沟道443与第一和第二电极341和342一体形成，所以可以实现具有非常稳定的结构的石墨烯器件。
如上所述，根据本发明的一个或更多以上实施例，由于石墨烯从生长层的暴露侧表面生长，所以具有非常小的宽度的石墨烯可以容易地形成在大面积上。此外，由于沟道和电极仅用石墨烯形成，所以电极可以与沟道一体地形成。这样，可以防止电极与沟道之间的接合误差。
应当理解，这里描述的示范性实施例应当仅在描述性意义上来理解而不用于限制。对每个实施例内的特征或方面的描述应当通常被认为可用于其他实施例中的其它类似特征或方面。
本申请要求于2011年6月27日向韩国知识产权局提交的韩国专利申请No.10-2011-0062482的权益，其公开内容通过引用整体合并于此。

Claims (24)

1.一种石墨烯结构，包括：
基板；
第一生长层，形成在所述基板上并具有暴露的侧表面；以及
第一石墨烯层，从所述第一生长层的侧表面生长；
第一保护层，形成为覆盖所述第一生长层的上表面；
第二生长层和第二保护层，交替堆叠在所述第一保护层上且具有暴露的侧表面；以及
第二石墨烯层，从所述第二生长层的侧表面生长。
2.如权利要求1所述的石墨烯结构，其中所述生长层包括金属。
3.如权利要求1所述的石墨烯结构，其中所述生长层包括锗(Ge)。
4.如权利要求1所述的石墨烯结构，其中所述石墨烯层具数nm的宽度。
5.一种制造石墨烯结构的方法，该方法包括：
在基板上交替形成至少一个生长层和至少一个保护层；
形成具有预定形状的凹槽以暴露所述至少一个保护层和所述至少一个生长层的侧表面以及所述基板的上表面；以及
仅在所述至少一个生长层的被所述凹槽暴露的侧表面上生长至少一个石墨烯层。
6.如权利要求5所述的方法，其中所述至少一个生长层通过在所述基板上沉积金属来形成。
7.如权利要求5所述的方法，其中所述至少一个生长层通过在所述基板上沉积锗(Ge)来形成。
8.如权利要求5所述的方法，其中所述至少一个生长层具有数nm的厚度。
9.如权利要求5所述的方法，其中所述至少一个保护层通过在所述至少一个生长层上沉积硅氧化物而形成。
10.如权利要求5所述的方法，其中所述至少一个石墨烯层通过使用化学气相沉积(CVD)法从所述至少一个生长层的暴露侧表面生长。
11.一种石墨烯器件，包括：
至少一个沟道，由第一石墨烯层形成；以及
第一和第二电极，连接到所述至少一个沟道的两端并由第二石墨烯层形成，
其中所述第一石墨烯层的平面垂直于所述第二石墨烯层的平面。
12.如权利要求11所述的石墨烯器件，其中所述第一和第二电极与所述至少一个沟道一体地形成。
13.如权利要求11所述的石墨烯器件，其中所述第一石墨烯层电连接到所述第二石墨烯层。
14.如权利要求11所述的石墨烯器件，其中多个沟道形成在所述第一和第二电极之间，并沿水平方向和垂直方向中的至少一个对准。
15.如权利要求11所述的石墨烯器件，其中所述至少一个沟道中的每个具有数nm的宽度。
16.一种制造石墨烯器件的方法，该方法包括：
在基板上依次形成生长层和保护层；
形成至少一个第一凹槽以及第二和第三凹槽，所述至少一个第一凹槽用于暴露所述生长层和所述保护层两者的侧表面以及所述基板的上表面，所述第二和第三凹槽用于暴露所述保护层的侧表面和所述生长层的上表面；
通过从所述生长层的被所述至少一个第一凹槽暴露的侧表面生长至少一个第一石墨烯层来形成至少一个沟道；以及
通过从所述生长层的被所述第二和第三凹槽暴露的上表面生长第二石墨烯层来形成第一和第二电极。
17.如权利要求16所述的方法，其中所述第二和第三凹槽连接到所述至少一个第一凹槽的两端。
18.如权利要求17所述的方法，其中所述第一和第二电极与所述至少一个沟道一体地形成。
19.如权利要求18所述的方法，其中所述至少一个第一石墨烯层垂直于所述第二石墨烯层形成并电连接到所述第二石墨烯层。
20.如权利要求16所述的方法，其中所述生长层通过在所述基板上沉积金属而形成。
21.如权利要求16所述的方法，其中所述生长层通过在所述基板上沉积锗(Ge)而形成。
22.如权利要求16所述的方法，其中所述生长层具有数nm的厚度。
23.如权利要求16所述的方法，其中所述保护层通过在所述生长层上沉积硅氧化物而形成。
24.如权利要求16所述的方法，其中所述第一和第二石墨烯层通过使用化学气相沉积(CVD)法从所述生长层的暴露侧表面和上表面生长。
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CN103972088B (zh) * 2013-01-28 2018-02-13 中国科学院微电子研究所 半导体器件制造方法
US9412556B2 (en) * 2013-10-31 2016-08-09 The Regents Of The University Of California Transmission electron microscope cells for use with liquid samples
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US9324804B2 (en) 2014-03-21 2016-04-26 Wisconsin Alumni Research Foundation Graphene-on-semiconductor substrates for analog electronics
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US9287359B1 (en) 2014-09-15 2016-03-15 Wisconsin Alumni Research Foundation Oriented bottom-up growth of armchair graphene nanoribbons on germanium
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US9761669B1 (en) 2016-07-18 2017-09-12 Wisconsin Alumni Research Foundation Seed-mediated growth of patterned graphene nanoribbon arrays
KR102422422B1 (ko) * 2017-06-01 2022-07-19 삼성전자주식회사 그래핀을 포함하는 반도체 소자 및 그 제조방법
US11618681B2 (en) 2021-06-28 2023-04-04 Wisconsin Alumni Research Foundation Graphene nanoribbons grown from aromatic molecular seeds
CN114062457A (zh) * 2021-11-15 2022-02-18 深圳市溢鑫科技研发有限公司 一种直立石墨烯电化学电极检测芯片及其制作方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838809B2 (en) * 2007-02-17 2010-11-23 Ludwig Lester F Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials
US7732859B2 (en) * 2007-07-16 2010-06-08 International Business Machines Corporation Graphene-based transistor
JP5470610B2 (ja) * 2007-10-04 2014-04-16 国立大学法人福井大学 グラフェンシートの製造方法
JP2009094190A (ja) * 2007-10-05 2009-04-30 Fujitsu Ltd 半導体装置
JP2009182173A (ja) * 2008-01-31 2009-08-13 Fujitsu Ltd グラフェントランジスタ及び電子機器
US8467224B2 (en) * 2008-04-11 2013-06-18 Sandisk 3D Llc Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
US8133793B2 (en) * 2008-05-16 2012-03-13 Sandisk 3D Llc Carbon nano-film reversible resistance-switchable elements and methods of forming the same
US7993986B2 (en) * 2008-08-29 2011-08-09 Advanced Micro Devices, Inc. Sidewall graphene devices for 3-D electronics
KR20100055098A (ko) 2008-11-17 2010-05-26 천승현 대면적 그래핀 층을 포함하는 전자 장치 및 이의 제조방법
JP2011032156A (ja) 2009-07-06 2011-02-17 Kaneka Corp グラフェンまたは薄膜グラファイトの製造方法
JP5395542B2 (ja) * 2009-07-13 2014-01-22 株式会社東芝 半導体装置
KR101423037B1 (ko) 2009-07-14 2014-08-13 그래핀스퀘어 주식회사 그래핀 시트의 제조 방법, 그래핀 적층체, 변형 수용성 그래핀 시트의 제조 방법, 변형 수용성 그래핀 시트, 및 이를 이용하는 소자
US9362364B2 (en) * 2009-07-21 2016-06-07 Cornell University Transfer-free batch fabrication of single layer graphene devices
US8753468B2 (en) 2009-08-27 2014-06-17 The United States Of America, As Represented By The Secretary Of The Navy Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
US8105928B2 (en) * 2009-11-04 2012-01-31 International Business Machines Corporation Graphene based switching device having a tunable bandgap
CN102598277B (zh) * 2009-11-13 2015-07-08 富士通株式会社 半导体装置及其制造方法
KR101758649B1 (ko) 2010-03-31 2017-07-18 삼성전자주식회사 게르마늄층을 이용한 그래핀 제조방법
KR101791938B1 (ko) * 2010-12-29 2017-11-02 삼성전자 주식회사 복수의 그래핀 채널층을 구비하는 그래핀 전자소자

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