CN102856175B - 炉管挡片结构制造方法 - Google Patents

炉管挡片结构制造方法 Download PDF

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CN102856175B
CN102856175B CN201210352952.0A CN201210352952A CN102856175B CN 102856175 B CN102856175 B CN 102856175B CN 201210352952 A CN201210352952 A CN 201210352952A CN 102856175 B CN102856175 B CN 102856175B
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silicon nitride
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CN102856175A (zh
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任川
王智
张旭升
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Shanghai Huali Microelectronics Corp
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Abstract

本发明提供了一种炉管挡片结构制造方法。炉管挡片结构包括：硅衬底基片、布置在所述硅衬底基片上的氮化硅层、布置在所述氮化硅层上的二氧化硅层。在硅衬底基片上形成氮化硅层以形成硅-氮化硅结构；并且在第一步骤得到的硅-氮化硅结构上形成二氧化硅层，以得到形成硅-氮化硅-二氧化硅结构。根据本发明的具有特殊结构的炉管挡片消除挡片对生产片膜厚造成的影响，使产品片上得到的薄膜有良好的片与片之间的均匀性，同时不影响挡片正常的使用、回收。根据本发明的炉管挡片，其结构特点是在硅-氮化硅的结构上再覆盖二氧化硅，使炉管挡片与产品片表面的材料一致，消除淀积过程中的淀积速率差异，使产品片得到更好的片间均匀性。

Description

炉管挡片结构制造方法
技术领域
本发明涉及半导体制造工艺，更具体地说，本发明涉及一种炉管挡片结构制造方法。
背景技术
在当前半导体制造工艺中，炉管工艺使用炉管挡片对炉管内的气流进行阻挡分层并均衡炉管内温度分布，使气流中的反应气体与被加工硅片均匀接触，均匀受热，发生化学物理反应，淀积或生长薄膜。
其中，多晶硅的淀积，使用低压化学气相淀积的炉管进行工艺，要用到的炉管挡片为硅/氮化硅结构，如图1所示：即在硅衬底基片1上淀积一层50到200纳米的氮化硅层2。使用这种结构可以让挡片在回收使用时保护硅衬底基片不被酸性溶液腐蚀，延长挡片使用寿命。
但是，淀积多晶硅的过程中，因为多晶硅通常作为栅极“金属-氧化物-半导体”结构的“金属”层参与导电，并覆盖在二氧化硅介质层上，因此，工艺中的产品片表面已生长好一层二氧化硅，与共同工艺的挡片表面材料不同。即，挡片表面为氮化硅，产品片表面为二氧化硅。
因为不同材料对通入炉管中的反应气体有不同的吸附速度，就导致不同材料表面淀积反应物的速率不同，所以，在通入定量的反应气体后，同样时间内，淀积速率高的材料表面消耗的反应气体多，供低淀积速率材料表面消耗的反应气体变少，使之淀积的反应物膜厚受到影响。
多晶硅淀积的过程中，当表面为氮化硅的挡片与产品片共同工艺时，因氮化硅与二氧化硅对反应气体的吸附速度不同，就会引起产品片上淀积的多晶硅膜厚异常，偏离工艺设定的目标值。
因此，需要改善挡片的结构，消除工艺中炉管挡片带来的对产品片膜厚的不利影响。
发明内容
本发明所要解决的技术问题是针对现有技术中存在上述缺陷，提供一种能够消除工艺中炉管挡片带来的对产品片膜厚的不利影响的炉管挡片结构制造方法。
为了实现上述技术目的，根据本发明的第一方面，提供了一种炉管挡片结构，其包括：硅衬底基片、布置在所述硅衬底基片上的氮化硅层、布置在所述氮化硅层上的二氧化硅层。
优选地，所述炉管挡片结构用于多晶硅淀积工艺。
优选地，所述氮化硅薄层2的厚度介于50-200纳米之间。
优选地，所述二氧化硅层3的厚度介于10-50纳米之间。
根据本发明的第二方面，提供了一种炉管挡片结构制造方法，其特征在于包括：第一步骤：在硅衬底基片上形成氮化硅层以形成硅-氮化硅结构；第二步骤：在第一步骤得到的硅-氮化硅结构上形成二氧化硅层，以得到形成硅-氮化硅-二氧化硅结构。
优选地，在第一步骤中，将硅衬底基片放入淀积氮化硅的炉管中，淀积覆盖一层50到200纳米的氮化硅层，以形成硅-氮化硅结构。
优选地，在第二步骤中，将第一步骤得到的硅-氮化硅结构放入淀积二氧化硅的炉管中，淀积覆盖一层10到50纳米的二氧化硅层，以形成硅-氮化硅-二氧化硅结构。
优选地，在第一步骤中，将硅衬底基片首先放在低压化学气相淀积炉管中，在反应温度为650-780摄氏度、反应压力为0.1-0.2Torr、反应气体为二氯硅烷和氨气的条件下反应，从而淀积氮化硅薄层，淀积厚度在50-200纳米之间。
优选地，在第二步骤中，将硅-氮化硅结构放入低压化学气相淀积炉管中，在反应温度为750-800摄氏度、反应压力为0.3-0.5Torr、反应气体为二氯硅烷和一氧化二氮的条件下，反应生成二氧化硅层。
优选地，在第二步骤中，将硅-氮化硅结构放入低压化学气相淀积炉管中，在反应温度为650-700摄氏度、反应压力0.3-0.4Torr、反应气体为正硅酸乙酯的条件下，反应生成二氧化硅层。
根据本发明的具有特殊结构的炉管挡片消除挡片对生产片膜厚造成的影响，使产品片上得到的薄膜有良好的片与片之间的均匀性，同时，不影响挡片正常的使用、回收。根据本发明的炉管挡片，其结构特点是在硅-氮化硅的结构上再覆盖二氧化硅，使炉管挡片与产品片表面的材料一致，消除淀积过程中的淀积速率差异，使产品片得到更好的片间均匀性。
附图说明
结合附图，并通过参考下面的详细描述，将会更容易地对本发明有更完整的理解并且更容易地理解其伴随的优点和特征，其中：
图1示意性地示出了根据现有技术的炉管挡片结构。
图2示意性地示出了根据本发明第一实施例的炉管挡片结构。
图3示意性地示出了根据本发明第二实施例的炉管挡片结构制造方法。
需要说明的是，附图用于说明本发明，而非限制本发明。注意，表示结构的附图可能并非按比例绘制。并且，附图中，相同或者类似的元件标有相同或者类似的标号。
具体实施方式
为了使本发明的内容更加清楚和易懂，下面结合具体实施例和附图对本发明的内容进行详细描述。
<第一实施例>
图2示意性地示出了根据本发明第一实施例的炉管挡片结构。
如图2所示，根据本发明第一实施例的炉管挡片结构包括：硅衬底基片1、布置在所述硅衬底基片1上的氮化硅(SiN)层2、布置在所述氮化硅层2上的二氧化硅层3。
优选地，所述氮化硅薄层2的厚度介于50-200纳米之间。
优选地，所述二氧化硅层3的厚度介于10-50纳米之间。
而且，上述根据本发明第一实施例的炉管挡片结构特别适合多晶硅淀积工艺。
采用在硅衬底基片上淀积氮化硅后再次淀积二氧化硅所形成的特殊结构的炉管挡片，消除了炉管工艺中炉管挡片对产品硅片造成厚度偏离目标值的影响，从而使产品硅片上淀积生长的薄膜，其片与片之间的均匀性明显改善，提高工艺能力指数。
由此，根据本发明第一实施例的炉管挡片结构至少具有下述技术效果：
1.采用本发明描述的硅-氮化硅-二氧化硅结构的炉管挡片，在实际生产使用中，消除了因不同材料表面带来的不利影响，提高了多晶硅淀积工艺中产品片间均匀性。如，对于厚度为100纳米的多晶硅淀积，发现使用通常硅-氮化硅结构的挡片，会导致产品片上淀积的膜厚下降1.5到2.0纳米，炉管内片间均匀性在0.6％到1.0％；而使用本发明中的新型结构挡片，工艺后产品片上淀积的膜厚没有下降，炉管内片间均匀性保持在0.3％以下。
2.使用新型结构的挡片，可以提高工艺能力，保证产品质量。
3.同时，现有针对通常结构挡片的回收工艺并不需要做任何更改，就可以回收新结构的挡片。
<第二实施例>
图3示意性地示出了根据本发明第二实施例的炉管挡片结构制造方法。
如图3所示，根据本发明第二实施例的炉管挡片结构制造方法包括：
第一步骤S1：在硅衬底基片1上形成氮化硅层2以形成硅-氮化硅结构；具体地说，例如，将硅衬底基片1放入淀积氮化硅的炉管中，淀积覆盖一层50到200纳米的氮化硅层2，形成硅-氮化硅结构；
第二步骤S2：在第一步骤S1得到的硅-氮化硅结构上形成二氧化硅层3，以得到形成硅-氮化硅-二氧化硅结构；具体地说，例如，将第一步骤S1得到的硅-氮化硅结构放入淀积二氧化硅的炉管中，淀积覆盖一层10到50纳米的二氧化硅层3，形成硅-氮化硅-二氧化硅结构。
此后，可将硅-氮化硅-二氧化硅结构的挡片放入多晶硅淀积的炉管中，与产品片一起工艺。
在炉管挡片使用完毕后，可以按照同样的回收工艺进行回收循环使用，不需要对现有回收工艺作任何更改。因为回收使用的酸性溶液在溶解挡片上淀积的多晶硅时，也会将挡片氮化硅表面覆盖的二氧化硅溶解腐蚀掉。
第一步骤S1覆盖的氮化硅可以在挡片回收时，保护硅衬底基片不被酸性溶液腐蚀，第二步骤S2覆盖的二氧化硅可以在挡片使用时，消除对产品片上淀积膜厚的影响。
更具体地说，在第一步骤S1中，可将硅衬底基片1首先放在LPCVD(LowPressure Chemical Vapor Deposition，低压化学气相淀积)炉管中，温度升至650-780摄氏度，压力降至0.1-0.2Torr，通入一定流量比例的反应气体DCS(二氯硅烷，化学分子式：SiH2Cl2)和NH3(氨气)，反应淀积氮化硅薄层2(氮化硅薄膜)，淀积厚度在50-200纳米之间。
在第二步骤S2中，再将硅-氮化硅结构，放入LPCVD炉管中，淀积二氧化硅层3(二氧化硅薄膜)。二氧化硅层的淀积有两种方法：方法一，在LPCVD炉管中，温度升至750-800摄氏度，压力降至0.3-0.5Torr，通入一定流量比例的反应气体DCS(二氯硅烷，化学分子式：SiH2Cl2)和N2O(一氧化二氮，又称笑气)，反应生成二氧化硅层3；方法二，在LPCVD炉管中，温度升至650-700摄氏度，压力降至0.3-0.4Torr，通入一定流量的反应气体TEOS(正硅酸乙酯，化学分子式：Si(OC2H5)4)，反应生成二氧化硅层。
此外，可替换地，上述使用炉管进行LPCVD工艺，实际还可以使用单片作业的腔体设备进行LPCVD工艺，淀积覆盖氮化硅和二氧化硅薄膜。
此外，需要说明的是，说明书中的术语“第一”、“第二”、“第三”等描述仅仅用于区分说明书中的各个组件、元素、步骤等，而不是用于表示各个组件、元素、步骤之间的逻辑关系或者顺序关系等。
可以理解的是，虽然本发明已以较佳实施例披露如上，然而上述实施例并非用以限定本发明。对于任何熟悉本领域的技术人员而言，在不脱离本发明技术方案范围情况下，都可利用上述揭示的技术内容对本发明技术方案作出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (2)

1.一种炉管挡片结构制造方法，其特征在于包括：
第一步骤：在硅衬底基片上形成氮化硅层以形成硅-氮化硅结构；
在第一步骤中，将硅衬底基片放入淀积氮化硅的炉管中，淀积覆盖一层50到200纳米的氮化硅层，以形成硅-氮化硅结构；
第二步骤：在第一步骤得到的硅-氮化硅结构上形成二氧化硅层，以得到形成硅-氮化硅-二氧化硅结构，
在第二步骤中，将第一步骤得到的硅-氮化硅结构放入淀积二氧化硅的炉管中，淀积覆盖一层10到50纳米的二氧化硅层，以形成硅-氮化硅-二氧化硅结构；
在第二步骤中，
将硅-氮化硅结构放入低压化学气相淀积炉管中，在反应温度为750-800摄氏度、反应压力为0.3-0.5Torr、反应气体为二氯硅烷和一氧化二氮的条件下，反应生成二氧化硅层；
或者
将硅-氮化硅结构放入低压化学气相淀积炉管中，在反应温度为650-700摄氏度、反应压力0.3-0.4Torr、反应气体为正硅酸乙酯的条件下，反应生成二氧化硅层。
2.根据权利要求1所述的炉管挡片结构制造方法，其特征在于，在第一步骤中，将硅衬底基片首先放在低压化学气相淀积炉管中，在反应温度为650-780摄氏度、反应压力为0.1-0.2Torr、反应气体为二氯硅烷和氨气的条件下反应，从而淀积氮化硅薄层，淀积厚度在50-200纳米之间。
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