CN102842629A - Thin-film solar cell with metal substrate as cell film substrate or packaging material - Google Patents
Thin-film solar cell with metal substrate as cell film substrate or packaging material Download PDFInfo
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- CN102842629A CN102842629A CN2011101666285A CN201110166628A CN102842629A CN 102842629 A CN102842629 A CN 102842629A CN 2011101666285 A CN2011101666285 A CN 2011101666285A CN 201110166628 A CN201110166628 A CN 201110166628A CN 102842629 A CN102842629 A CN 102842629A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a thin-film solar cell with a metal substrate as a cell film substrate or a packaging material as well as a structural feature of the thin-film cell. The metal substrate comprises a metal aluminum substrate, a copper substrate or a copper-aluminum alloy substrate. The thin-film solar cell comprises a thin-film silicon solar cell, a copper-indium-gallium-selenium (CIGS) cell or a cadmium telluride (CdTe) solar cell. The thin-film solar cell has specific requirements for structural parameters and water vapor transmission rate of the metal substrate. The metal substrate has the characteristic of high heat conducting coefficient, so that the temperature of the thin-film cell can be effectively reduced; and meanwhile, the metal substrate can be taken as an electrode or the packaging material of the solar cell, so that the cost of the thin-film solar cell is effectively reduced.
Description
Technical field: the present invention relates to technical field of thin-film solar, relating in particular to a kind of is the thin-film solar cells of film deposition substrate or encapsulating material with the metal substrate.
Background technology: solar battery technology; Be photovoltaic technology, with its power generation process environmental protection and the endless advantage of resource, at present just with 30% annual growth in fast development; Photovoltaic technology is the important component part of regenerative resource; 1/3 of renewable energy power generation will be realized that solar battery technology has been realized the process of large-area industrialization at present by photovoltaic technology, and development in future space especially is unlimited.
Solar battery technology, a kind of semiconductor technology of fundamentally saying so is the same with all semiconductor device; Solar cell has the characteristic of high-temperature behavior decline; At present temperature damping's coefficient of crystal silicon cell be-0.5%/℃, temperature damping's coefficient of thin-film silicon cell is-0.28%/℃, copper indium gallium tin (CIGS) battery temperature attenuation coefficient is about-0.3%; Temperature damping's coefficient of cadmium telluride (CdTe) battery is-0.4%; For thin-film silicon cell, the temperature of its surfaces of cell can exceed 30 ℃ of ambient temperatures, and rated output power is that the assembly of 100W can be exported by 30 ℃ of power that lose 8W of Yin Wendu rising; Therefore the temperature that reduces assembly is vital, and the effective means that wherein reduces assembly temperature is to improve the capacity of heat transmission of battery component backing material or encapsulating material.
In the novel battery structure that is proposed among the present invention as the metal substrate of film deposition substrate; Can realize higher conductive coefficient; Reduce the temperature of battery effectively,, can save conventional back electrode production process and corresponding cost so simultaneously because the back electrode of battery has been produced on metallic substrate surfaces; In the novel battery structure that is proposed among the present invention as the metal substrate of encapsulating material; Can reduce the temperature of battery effectively, the header board that can be used as encapsulating material and battery simultaneously is combined into battery component.
Description of drawings
Fig. 1 is with the hull cell structural representation of metal substrate as the film deposition substrate.
A is a metal substrate among Fig. 1, and B is the battery rete, and C is preceding electrode, and D is the encapsulation rete, and E is a glassy layer.
Fig. 2 is the hull cell structural representation of encapsulating material with the metal substrate.
A is a metal substrate among Fig. 2, and B is the encapsulation rete, and C is a back electrode, and D is the battery rete, and E is preceding electrode, and F is a glassy layer.
Embodiment:
Embodiment 1
Deposit film silion cell layer on metal aluminum substrate, metal aluminum substrate is divided into aluminium base body layer, insulating barrier and metal conducting layer; Thin-film silicon cell is deposited upon on the metal conducting layer, and the sedimentary sequence of thin-film silicon cell layer is n, i and p layer; Deposit transparent conductive layer then, promptly before electrode layer, align with glassy layer again; Accompany the encapsulating film layer in the middle of the two, carry out the lamination encapsulation.
Embodiment 2
On metal aluminum substrate, deposit cadmium telluride (CdTe) battery layers, metal aluminum substrate is divided into aluminium base body layer, insulating barrier and metal conducting layer; Cadmium telluride (CdTe) battery layers is deposited on the metal conducting layer; Deposit transparent conductive layer then, promptly before electrode layer, align with glassy layer again; Accompany the encapsulating film layer in the middle of the two, carry out the lamination encapsulation.
Embodiment 3
Deposited copper indium gallium tin (CIGS) battery layers on metal aluminum substrate, metal aluminum substrate is divided into aluminium base body layer, insulating barrier and metal conducting layer; Copper indium gallium tin (CIGS) battery layers is deposited on the metal conducting layer; Deposit transparent conductive layer then, promptly before electrode layer, align with glassy layer again; Accompany the encapsulating film layer in the middle of the two, carry out the lamination encapsulation.
Embodiment 4
The preceding electrode layer of cell deposited on the header board glass substrate is the thin-film silicon cell layer then, and the order of deposition is p, i, and the n layer deposits dorsum electrode layer then, and preceding then glass sheet and metal substrate alignment are placed, and accompany the encapsulating film layer in the middle of the two, carry out lamination.
Embodiment 5
The preceding electrode layer of cell deposited on the header board glass substrate is cadmium telluride (CdTe) battery layers then, deposits dorsum electrode layer then, and preceding then glass sheet and metal substrate alignment are placed, and accompany the encapsulating film layer in the middle of the two, carry out lamination.
Embodiment 6
The preceding electrode layer of cell deposited on the header board glass substrate is copper indium gallium tin (CIGS) battery layers then, deposits dorsum electrode layer then, and preceding then glass sheet and metal substrate alignment are placed, and accompany the encapsulating film layer in the middle of the two, carry out lamination.
Claims (6)
1. one kind is the thin-film solar cells of battery rete substrate or encapsulating material with the metal substrate; Its characteristic is following: when (1) with the metal substrate is battery rete substrate; Be cell deposited film on the metal substrate that satisfies the hull cell index request, the conductive metal layer on the metal substrate is as a lateral electrode of hull cell.When (2) being encapsulating material, be as the sealing of hull cell and the material of bonding with metal substrate with the metal substrate.
2. described in claim 1, a kind of is the thin-film solar cells of battery rete substrate or encapsulating material with the metal substrate, and metal substrate wherein comprises aluminium base, copper base, perhaps aluminium copper substrate.
3. described in claim 1, a kind of is the thin-film solar cells of battery rete substrate or encapsulating material with the metal substrate, comprise thin-film silicon cell, copper indium gallium tin (CIGS) hull cell and cadmium telluride (CdTe) hull cell.
4. the metal substrate described in claim 1, its arcuate deformation≤3mm/ sheet, waveform distortion≤1mm/300mm; Diagonal deviation≤3mm; The maximum deviation of two catercorner lengths of metal substrate is no more than 3mm, the linearity requirement≤0.5mm/100mm behind the edging of length limit
5. described in claim 1, the conductive metal layer on the metal substrate is as a lateral electrode of hull cell, face electrode that electrode can be as a whole or have the electrode of ad hoc structure.
6. described in claim 1, when being encapsulating material with the metal substrate, the steam transmitance of encapsulating material is less than 0.1g/m
2My god.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101666285A CN102842629A (en) | 2011-06-21 | 2011-06-21 | Thin-film solar cell with metal substrate as cell film substrate or packaging material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101666285A CN102842629A (en) | 2011-06-21 | 2011-06-21 | Thin-film solar cell with metal substrate as cell film substrate or packaging material |
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| Publication Number | Publication Date |
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| CN102842629A true CN102842629A (en) | 2012-12-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011101666285A Pending CN102842629A (en) | 2011-06-21 | 2011-06-21 | Thin-film solar cell with metal substrate as cell film substrate or packaging material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108470626A (en) * | 2018-03-13 | 2018-08-31 | 中国科学院深圳先进技术研究院 | Electrode material and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080245408A1 (en) * | 2007-04-09 | 2008-10-09 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing single-crystal silicon solar cell and single-crystal silicon solar cell |
| CN101814554A (en) * | 2010-03-31 | 2010-08-25 | 北京科技大学 | Structural design method of film solar cell |
| CN201667342U (en) * | 2010-04-07 | 2010-12-08 | 陈平坚 | Solar energy light-gathering photovoltaic power generation cell panel |
| CN101958349A (en) * | 2010-07-12 | 2011-01-26 | 江苏新广联科技股份有限公司 | CIGS (CuInGaSe) thin film solar cell slice with installation positioning area |
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2011
- 2011-06-21 CN CN2011101666285A patent/CN102842629A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080245408A1 (en) * | 2007-04-09 | 2008-10-09 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing single-crystal silicon solar cell and single-crystal silicon solar cell |
| CN101814554A (en) * | 2010-03-31 | 2010-08-25 | 北京科技大学 | Structural design method of film solar cell |
| CN201667342U (en) * | 2010-04-07 | 2010-12-08 | 陈平坚 | Solar energy light-gathering photovoltaic power generation cell panel |
| CN101958349A (en) * | 2010-07-12 | 2011-01-26 | 江苏新广联科技股份有限公司 | CIGS (CuInGaSe) thin film solar cell slice with installation positioning area |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108470626A (en) * | 2018-03-13 | 2018-08-31 | 中国科学院深圳先进技术研究院 | Electrode material and preparation method thereof |
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Application publication date: 20121226 |