CN109216475B - Solar panel assembly - Google Patents

Solar panel assembly Download PDF

Info

Publication number
CN109216475B
CN109216475B CN201710523281.2A CN201710523281A CN109216475B CN 109216475 B CN109216475 B CN 109216475B CN 201710523281 A CN201710523281 A CN 201710523281A CN 109216475 B CN109216475 B CN 109216475B
Authority
CN
China
Prior art keywords
electrode
layer
silicon substrate
diffusion
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710523281.2A
Other languages
Chinese (zh)
Other versions
CN109216475A (en
Inventor
姚云江
孙翔
姜占锋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BYD Co Ltd
Original Assignee
BYD Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BYD Co Ltd filed Critical BYD Co Ltd
Priority to CN201710523281.2A priority Critical patent/CN109216475B/en
Publication of CN109216475A publication Critical patent/CN109216475A/en
Application granted granted Critical
Publication of CN109216475B publication Critical patent/CN109216475B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/049—Protective back sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

In order to solve the problems of poor connection reliability, waste of welding materials and complicated welding process of the conventional back contact type solar cell, the invention provides a solar cell panel assembly which comprises a back panel layer and a plurality of solar cells, wherein each solar cell comprises a silicon substrate, a first electrode and a second electrode, the silicon substrate is provided with a light-facing surface, a light-facing surface and a side surface surrounding between the light-facing surface and the light-facing surface, the first electrode is positioned on the light-facing surface of the silicon substrate, and the second electrode comprises a side electrode and a front electrode which are electrically connected with each other; a metal conductive piece is arranged on the back plate layer and comprises a metal bottom surface and a protruding metal, and the protruding metal is formed by the upward protrusion of the metal bottom surface; and two adjacent solar cells are electrically connected through the metal conductive parts. The solar cell panel assembly provided by the invention has the advantages of simple structure and high reliability, and reduces the welding difficulty and the operation difficulty of laying the assemblies.

Description

Solar panel assembly
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a solar cell panel assembly.
Background
The front and back surfaces of a conventional crystalline silicon solar cell are respectively provided with 2 to 3 silver main grid lines as the positive and negative electrodes of the cell, and the main grid lines not only consume a large amount of silver paste, but also reduce the efficiency of the cell because of shielding incident light. In addition, the positive electrode and the negative electrode of the battery are respectively distributed on the upper surface and the lower surface of the battery, when the batteries are connected in series, the electrode on the front surface of the battery piece is required to be welded with the electrode on the back surface of the adjacent battery piece by using a welding strip, the welding process is complicated, the use of welding materials is more, and the battery piece is easy to damage during welding and in a subsequent laminating process.
In the prior art, researchers developed back contact cells such as EWT (emitter wrap around back contact cell), MWT (metal wrap around back contact cell), IBC (all back contact cell) and the like for the front shading loss of the solar cell. The front sides of the back contact cells are completely free of grid lines (EWT cells and IBC cells) or main grid lines (MWT cells), so that the light shading area of the front sides is reduced, and the power of the solar cells is improved.
The manufacturing process of back contact batteries such as EWT (emitter-surrounding back contact battery), MWT (metal-surrounding back contact battery), IBC (all back contact battery) and the like is quite complex, for example, the MWT battery and the EWT battery need to be subjected to laser drilling on a silicon wafer, and an electrode or an emitter region is manufactured to the back of the battery through a hole, so that the manufacturing difficulty is high, the cost is high, and a large amount of solder is consumed for manufacturing a component. The IBC battery has extremely high requirements on the manufacturing process, and only the American Sunpower company realizes small-scale mass production at present.
In the prior art, researchers use optimization methods such as changing electrode positions and special laying modes aiming at the damage of a battery piece and the waste of welding flux caused by a welding mode. Cutting the battery piece with the screen-printed front and back electrodes into small silicon wafers (3-4 parts) in equal parts along the direction perpendicular to the thin grid line, respectively locating the front electrode and the back electrode of the cut battery piece at two ends of the battery piece but on different surfaces, and overlapping and serially connecting the back electrode of the battery piece and the front electrode of the adjacent battery piece by using tin paste according to a tile type laying mode. However, the method for manufacturing the module in the tile-type arrangement mode and the method are easy to cause the breakage and damage of the battery pieces in the welding process and the subsequent laminating process, and the battery pieces at the laminated position cannot participate in power generation, thereby causing waste and influencing the module power.
Aiming at the technical defects, a novel small back contact type solar cell is developed subsequently, a conventional silicon wafer (generally 156mm to 156mm) is cut into 2-8 parts by equal parts through laser to manufacture a small back contact cell, the front side of the cell is not provided with main grid lines to block light, and the power of the module is improved; the positive electrode and the negative electrode are connected on the back of the battery, so that the welding damage rate is reduced, the usage amount of solder of about 2/3 is reduced, the heat loss of a welding strip is greatly reduced, and the power of the assembly is effectively improved; the positive and negative electrodes are connected on the back of the battery, the clearance of the battery piece is reduced, and the bus bar is directly led out from the battery piece, so that the total area of the assembly is reduced, the effective area of the assembly is increased, and the power of the assembly is increased.
The small back contact solar cell has the advantages that the positive electrode and the negative electrode are respectively positioned on the two edges of the cell, the welding process is special, the two electrodes of the two cells need to be welded in parallel and transversely at the same time, the welding process is very difficult, and electric leakage and deformation of the whole cell matrix caused by welding dislocation are easy to occur. Meanwhile, because the cell spacing is small, the flexibility of the welding strip and the cell is poor, the stress buffering effect of the cell matrix is small, and the hidden crack and even fracture are easy to occur in the processes of welding, typesetting, laminating and the like.
Although the above various back contact type solar cells provide different cell interconnection modes, the existing back contact type solar cells still cannot solve the problems of poor connection reliability between the cells, waste of welding materials and complicated welding process.
Disclosure of Invention
The invention provides a solar panel assembly, which aims to solve the problems of poor connection reliability, waste of welding materials and complicated welding process of the conventional back contact type solar cell.
The technical scheme adopted by the invention for solving the technical problems is as follows:
the solar cell panel assembly comprises a back panel layer and a plurality of solar cells arranged on the back panel layer, wherein each solar cell comprises a silicon substrate, a first electrode and a second electrode, the silicon substrate is provided with a light-facing surface, a light-facing surface and a side surface surrounding between the light-facing surface and the light-facing surface, the first electrode is positioned on the light-facing surface of the silicon substrate, the second electrode comprises a side electrode and a front electrode which are electrically connected with each other, the side electrode is positioned on the side surface of the silicon substrate, and the front electrode is positioned on the light-facing surface of the silicon substrate;
a metal conductive piece is arranged on the back plate layer and comprises a metal bottom surface and a protruding metal, and the protruding metal is formed by the upward protrusion of the metal bottom surface;
two adjacent solar cells are electrically connected through the metal conductive piece, the metal bottom surface is electrically connected with the first electrode of one solar cell, and the protruding metal is electrically connected with the side electrode of the other solar cell.
Optionally, the second electrode further includes a bottom electrode, the bottom electrode is located on a backlight surface of the silicon substrate, and the bottom electrode is electrically connected to the side electrode.
Optionally, the bottom electrode of the other solar cell is electrically connected with the metal bottom.
Optionally, the metal conductive member is of an inverted T-shaped structure, the protruding metal is located at the middle position of the top of the metal bottom surface and protrudes upwards, in two adjacent solar cells, the first electrode of one solar cell and the bottom electrode of the other solar cell are respectively located at two sides of the protruding metal and are in electrical contact with the metal bottom surface, and the side electrode of the other solar cell is in electrical contact with the protruding metal.
Optionally, the metal conductive member is in an L-shaped structure, the protruding metal is located at an edge position of the metal bottom surface and protrudes upward, in two adjacent solar cells, the first electrode of one solar cell and the bottom surface electrode of the other solar cell are both located on the same side of the protruding metal and are in electrical contact with the metal bottom surface, and the side surface electrode of the other solar cell is in electrical contact with the protruding metal.
Optionally, the silicon substrate has a rectangular structure, the first electrode and the bottom electrode are respectively located on two sides of the backlight surface along the width direction, the first electrode extends along an edge of an end portion of the backlight surface to form a strip-shaped structure, and the bottom electrode extends along an edge of an end portion of the backlight surface to form a strip-shaped structure.
Optionally, a diffusion layer is formed on the silicon substrate, the diffusion layer including a first diffusion and a second diffusion;
the first diffusion part is formed on a light-facing surface of the silicon substrate, and the front electrode is electrically connected with the first diffusion part;
the second diffusion portion is formed on a side surface of the silicon substrate, and the side surface electrode is electrically connected to the second diffusion portion.
Optionally, a diffusion layer is formed on the silicon substrate, and the diffusion layer includes a first diffusion portion, a second diffusion portion and a third diffusion portion, and both ends of the second diffusion portion are respectively connected to the first diffusion portion and the third diffusion portion;
the first diffusion part is formed on a light-facing surface of the silicon substrate, and the front electrode is electrically connected with the first diffusion part;
the second diffusion portion is formed on a side surface of the silicon substrate, and the side surface electrode is electrically connected to the second diffusion portion;
the third diffusion portion is formed on a backlight surface of the silicon substrate, and the bottom electrode is electrically connected to the third diffusion portion.
Optionally, the front electrode includes a plurality of electrode gate lines parallel to each other, the electrode gate lines extending from one end to the other end of the first diffusion portion and electrically connected to the side electrodes.
Optionally, the side electrode covers a surface of the second diffusion facing away from the silicon substrate.
Optionally, the bottom surface electrode covers a surface of the third diffusion portion facing away from the silicon substrate.
Optionally, an aluminum back field is formed on a backlight surface of the silicon substrate, the first electrode is located on the aluminum back field, and the aluminum back field and the diffusion layer are isolated from each other.
Optionally, the solar cell further comprises an antireflection layer, the antireflection layer covers the light-facing surface of the silicon substrate, the front electrode is at least partially embedded into the antireflection layer, and the front electrode and the light-facing surface of the silicon substrate form ohmic contact.
Optionally, the back plate layer further includes a bottom plate and an insulating layer, the metal conductive component and the insulating layer are both located on the top of the bottom plate, and the insulating layer covers an area exposed outside the periphery of the metal conductive component on the bottom plate.
Optionally, the insulating layer is a white light reflecting layer.
Optionally, the insulating layer is a polymer material layer containing a white filler, and the white filler includes white carbon black and/or titanium dioxide.
Optionally, the solar panel assembly further comprises a first adhesive layer, a second adhesive layer and a cover plate layer, wherein the back plate layer, the first adhesive layer, the solar cell piece, the second adhesive layer and the cover plate layer are sequentially stacked.
Optionally, the cover sheet layer comprises one or more combinations of a photovoltaic glass layer, a coated anti-reflective glass layer, and a textured anti-reflective glass layer.
According to the solar cell panel assembly provided by the invention, the side electrodes of the first electrode and the second electrode are respectively led out from the backlight surface and the side surface of the silicon substrate, meanwhile, the back plate layer is provided with the metal conductive piece, the metal conductive piece is provided with the metal bottom surface electrically connected with the first electrode and the protruding metal electrically connected with the side electrode, and the protruding metal simultaneously plays a role in positioning the solar cells, so that the solar cells can be orderly arranged on the back plate layer, the matrix deformation is avoided, the first electrode and the side electrode can form sufficient electric contact with the metal conductive piece, the contact internal resistance of the solar cell panel assembly is reduced, the use of solder is reduced, and the stability of the cell is improved.
Drawings
Fig. 1 is a schematic structural diagram of a back plate layer of a solar panel assembly according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional structure diagram of a solar cell provided in an embodiment of the invention;
fig. 3 is a schematic view of a light-facing surface structure of a solar cell provided in an embodiment of the invention;
fig. 4 is a schematic structural diagram of a backlight surface of a solar cell provided in an embodiment of the invention;
fig. 5 is a schematic cross-sectional structure diagram of a back plate layer including L-shaped and inverted T-shaped metal conductive devices according to an embodiment of the present invention;
fig. 6 is a schematic cross-sectional view of a back plate layer including an inverted T-shaped conductive metal device according to an embodiment of the present invention;
fig. 7 is a schematic bottom view illustrating a metal conductive member of a solar cell panel assembly connected to a solar cell according to an embodiment of the invention;
fig. 8 is a schematic cross-sectional view of a back plate layer containing L-shaped metal conductive elements according to an embodiment of the present invention;
fig. 9 is a schematic bottom view illustrating a connection between a metal conductive member and a solar cell according to an embodiment of the invention;
fig. 10 is a schematic top view of a back plate layer of a solar panel assembly according to an embodiment of the present invention;
fig. 11 is a schematic diagram illustrating solar cell sheet connection of a solar cell panel assembly according to an embodiment of the present invention;
fig. 12 is a schematic diagram of a connection circuit of a solar panel assembly according to an embodiment of the present invention;
fig. 13 is a schematic view of a layered structure of a solar panel assembly according to an embodiment of the present invention.
The reference numbers in the drawings of the specification are as follows:
1. a solar cell sheet; 11. a silicon substrate; 111. a diffusion layer; 1111. a first diffusion portion; 1112. a second diffusion portion; 1113. a third diffusion portion; 12. a first electrode; 13. a second electrode; 131. a front electrode; 1311. an electrode grid line; 132. a side electrode; 133. a bottom surface electrode; 14. an aluminum back field; 15. an anti-reflective layer; 2. a backsheet layer; 21. a base plate; 22. an insulating layer; 23. a first lead-out line; 24. a second lead-out line; 25. a metal conductive member; 251. a protruding metal; 252. a metal bottom surface; 26. an intermediate line; 3. a second adhesive layer; 4. a first glue layer; 5. a cover plate layer.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to 5, the embodiment discloses a solar cell panel assembly, which includes a back plate layer 2 and a plurality of solar cells 1 disposed on the back plate layer 2, where each solar cell 1 includes a silicon substrate 11, a first electrode 12 and a second electrode 13, the silicon substrate 11 has a light-facing surface, a light-facing surface and a side surface surrounding between the light-facing surface and the light-facing surface, the first electrode 12 is located on the light-facing surface of the silicon substrate 11, the second electrode 13 includes a side electrode 132 and a front electrode 131 electrically connected to each other, the side electrode 132 is located on the side surface of the silicon substrate 11, and the front electrode 131 is located on the light-facing surface of the silicon substrate 11.
As shown in fig. 5, a metal conductive member 25 is disposed on the back plate layer 2, the metal conductive member 25 includes a metal bottom surface 252 and a protruding metal 251, and the protruding metal 251 is formed by protruding the metal bottom surface 252 upward, it should be noted that, in different embodiments, the protruding metal 251 and the metal bottom surface 252 may be an integral structure, or a separate structure electrically connected in direct contact, or a separate structure electrically connected through an intermediate medium.
Two adjacent solar cells 1 are electrically connected through the metal conductive member 25, the metal bottom surface 252 is electrically connected with the first electrode 12 of one solar cell 1, and the protruding metal 251 is electrically connected with the side electrode 132 of the other solar cell 1.
The side electrodes 132 of the first electrode 12 and the second electrode 13 are respectively led out from the backlight surface and the side surface of the silicon substrate 11, meanwhile, the metal conductive member 25 is arranged on the back plate layer 2, the metal conductive member 25 is provided with a metal bottom surface 252 electrically connected with the first electrode 12 and a protruding metal 251 electrically connected with the side electrode 132, the protruding metal simultaneously plays a role in positioning the solar cell piece 1, so that the solar cell pieces can be orderly arranged on the back plate layer 2, matrix deformation is avoided, the first electrode 12 and the side electrode 132 can form sufficient electrical contact with the metal conductive member 25, contact internal resistance of the solar cell panel assembly is reduced, use of solder is reduced, and cell stability is improved.
It can be understood that the silicon substrate 11 can form positive and negative charges with different properties on the light-facing surface and the backlight surface under illumination, and the first electrode 12 and the second electrode 13 are used for extracting the positive and negative charges from the silicon substrate 11, so as to form a basic power supply functional structure of the solar cell 1.
As shown in fig. 3, the front electrode 131 is located on the light-facing surface of the silicon substrate 11 and is electrically connected to the side electrode 132, that is, one end of the front electrode 131 needs to extend to the edge of the light-facing surface of the silicon substrate 11 close to the side electrode 132, for conducting the first kind of charges generated on the light-facing surface of the silicon substrate 11 to the side electrode 132, and the side electrode 132 is electrically connected to the protruding metal of the conductive metal member 25, in some embodiments of the present invention, the metal conductive members 25 are disposed on both sides of the solar cell 1 for electrical connection, and at this time, the other end of the front electrode 131 is spaced apart from or insulated from the edge of the light-facing surface of the silicon substrate 11 away from the side electrode 132, so as to prevent the front electrode 131 from directly conducting the metal conductive members 25 on the two sides of the solar cell 1, which results in short circuit of the solar cell 1.
In this embodiment, the second electrode 13 further includes a bottom electrode 133, the bottom electrode 133 is located on a backlight surface of the silicon substrate 11, and the bottom electrode 133 is electrically connected to the side electrode 132.
In two adjacent solar cell sheets 1, the metal bottom surface 252 is electrically connected to the first electrode 12 of one solar cell sheet 1, the protruding metal 251 is electrically connected to the side surface electrode 132 of the other solar cell sheet 1, and the bottom surface electrode 133 of the other solar cell sheet 1 is electrically connected to the metal bottom surface 252.
The bottom electrodes 133 of the first electrode 12 and the second electrode 13 are all arranged on the backlight surface of the silicon substrate 11, so that the back contact type installation of the solar cell 1 can be realized, the formation of a main electrode grid line 1311 on the backlight surface of the silicon substrate 11 is avoided, the front shading area is reduced, the power and the photoelectric conversion efficiency of the solar cell 1 are further improved, the arrangement also reduces the use of electrically connected solders among different solar cells 1, the electrically connected solders can be mutually connected through the metal conductive pieces 25 positioned on the back plate layer 2, and the manufacturing cost is reduced.
On the other hand, the second electrode 13 is provided in the form of the front surface electrode, the side surface electrode 132 and the bottom surface electrode 133, and the second electrode 13 is drawn out from the side surface of the silicon substrate 11 and extended to the backlight surface, so that the structure processing of the second electrode 13 is simple, the operation such as laser drilling is not required to be additionally performed, the processing difficulty is reduced, the contact area of the side surface electrode 132 with the external metal conductive member 25 can be increased, the contact resistance is reduced, and the current can be better led out.
The metal conductive elements 25 and the connection arrangement thereof according to the embodiment of the first aspect of the present invention are described below with reference to fig. 6, fig. 7, fig. 10, fig. 11 and fig. 12.
The metal conductive member 25 is of an inverted T-shaped structure, the protruding metal 251 is located at the middle position of the top of the metal bottom surface 252 and protrudes upwards, in two adjacent solar cells 1, the first electrode 12 of one solar cell 1 and the bottom electrode 133 of the other solar cell 1 are respectively located at two sides of the protruding metal 251 and are in electrical contact with the metal bottom surface 252, and the side electrode 132 of the other solar cell 1 is in electrical contact with the protruding metal 251 to form a series connection.
The silicon substrate 11 is of a rectangular structure, the first electrode 12 and the bottom electrode 133 are respectively located on two sides of the backlight surface along the width direction, the first electrode 12 extends along the edge of the end portion of the backlight surface to form a strip-shaped structure, and the bottom electrode 133 extends along the edge of the end portion of the backlight surface to form a strip-shaped structure.
It should be noted that, in other embodiments, the silicon substrate 11 may also adopt other shape structures, such as a cylinder, an irregular structure, and the like.
The silicon substrate 11 with the rectangular structure adopted in this embodiment is beneficial to the orderly arrangement of the solar cell pieces 1 on the back plate layer 2, so as to reduce the vacant space between the solar cell pieces 1 and improve the density of the solar cell pieces 1, and on the other hand, the first electrode 12 and the bottom electrode 133 are formed into two parallel strip-shaped structures at the edge of the backlight surface of the silicon substrate 11, so that the welding distance between the first electrode 12 of one solar cell piece 1 and the second electrode 13 of the other solar cell piece 1 in two adjacent solar cell pieces 1 is shortened, and the use of solder is reduced.
As shown in fig. 10 to 12, which are schematic views of a connection structure between solar cells 1 on a back plate layer 2 in this embodiment, the back plate layer 2 further includes a first lead-out line 23, a second lead-out line 24, and an intermediate line 26, the first lead-out line 23 and the second lead-out line 24 are symmetrically disposed on two sides of a central axis of the same end portion of the back plate layer 2, the intermediate line 26 is disposed on the other end portion of the back plate layer 2, and the intermediate line 26 is parallel to the first lead-out line 23 and the second lead-out line 24 respectively.
A plurality of metal conductive pieces 25 are arranged between the intermediate line 26 and the first lead-out line 23, the metal conductive pieces 25 between the intermediate line 26 and the first lead-out line 23 are arranged in a matrix with multiple rows and multiple columns, a solar cell piece 1 is arranged between two adjacent metal conductive pieces 25 on a single column, the first electrode 12 of the solar cell piece 1 is welded on the bottom metal of one metal conductive piece 25, the bottom electrode 133 and the side electrode 132 of the solar cell piece 1 are welded on the bottom metal and the protruding metal of the other metal conductive piece 25, and the solar cell pieces 1 at two ends of the single column are electrically connected to the first lead-out line 23 and the intermediate line 26 respectively.
A plurality of metal conductive pieces 25 are arranged between the middle line 26 and the second lead-out line 24, the metal conductive pieces 25 between the middle line 26 and the second lead-out line 24 are arranged in a matrix with multiple rows and multiple columns, a solar cell piece 1 is arranged between two adjacent metal conductive pieces 25 on a single column, the first electrode 12 of the solar cell piece 1 is welded on the bottom metal of one metal conductive piece 25, the bottom electrode 133 and the side electrode 132 of the solar cell piece 1 are welded on the bottom metal and the protruding metal of the other metal conductive piece 25, and the solar cell pieces 1 at two ends of the single column are electrically connected to the second lead-out line 24 and the middle line 26 respectively.
The first lead-out line 23 may be a positive electrode or a negative electrode, and the second lead-out line 24 is an electrode opposite to the first lead-out line 23; when the first lead line 23 is positive, the second lead line 24 is negative, and vice versa.
In this embodiment, a plurality of solar cells 1 are connected in series to form a cell string, the plurality of cell strings are connected in parallel to each other to form a cell group, two cell groups are connected in series through the intermediate circuit 26, the connection mode of the solar cells 1 connected in series and parallel is obtained, the first leading-out line 23 and the second leading-out line 24 are respectively led out from the left side and the right side of the back plate layer 2, when a plurality of solar cell panel assemblies are installed and connected, the plurality of solar cell panel assemblies can be arranged side by side, and because the first leading-out line 23 and the second leading-out line 24 are respectively led out from the two sides of the solar cell panel assemblies, the electric connection length of two adjacent solar cell panel assemblies can be effectively reduced, so that the length of a connection cable can be reduced, and the cost and the internal resistance of the cell.
It is understood that in other embodiments, the positions of the first outgoing line 23, the second outgoing line 24, the intermediate line 26 and the metal conductive member 25 can be adjusted by those skilled in the art to form different series and/or parallel connection forms for the solar cells 1, and all the conventional alternatives realized under the teaching of the present invention are included in the protection scope of the present invention.
The metal conductive elements 25 and their connection arrangements according to the second embodiment of the present invention will be described with reference to fig. 8 and 9.
The metal conductive member 25 is in an L-shaped structure, the protruding metal 251 is located at an edge position of the metal bottom surface 252 and protrudes upward, in two adjacent solar cells 1, the first electrode 12 of one solar cell 1 and the bottom surface electrode 133 of the other solar cell 1 are both located on the same side of the protruding metal 251 and are in electrical contact with the metal bottom surface 252, and the side surface electrode 132 of the other solar cell 1 is in electrical contact with the protruding metal 251.
The silicon substrate 11 is of a rectangular structure, the first electrode 12 and the bottom electrode 133 are respectively located on two sides of the backlight surface along the width direction, the first electrode 12 extends along the edge of the end portion of the backlight surface to form a strip-shaped structure, and the bottom electrode 133 extends along the edge of the end portion of the backlight surface to form a strip-shaped structure.
Through the arrangement, the plurality of solar cells 1 can be longitudinally connected in parallel, the plurality of solar cells are mutually connected in series, and the protruding metal 251 can play a role in positioning the solar cells 1, so that matrix deformation is avoided; meanwhile, the protruding metal 251 can form an electrical contact with the side electrode 132 of the solar cell sheet 1 to increase the contact area and reduce the contact resistance.
It should be noted that, the metal conductive member 25 can also implement parallel connection between two adjacent solar cells 1, for example: two parallel metal conductive members 25 are arranged, in two adjacent solar cells 1, the first electrode 12 of one solar cell 1 and the first electrode 12 of the other solar cell 1 are both electrically connected with one metal conductive member 25, and the bottom surface electrode 133 of one solar cell 1 and the bottom surface electrode 133 of the other solar cell 1 are both electrically connected with the other metal conductive member 25.
It should be noted that the metal conductive device provided in the first aspect of the present invention and the metal conductive device provided in the second aspect of the present invention may be implemented separately, or may be implemented in combination to obtain different implementations, and all of them are included in the scope of the present invention.
The structure of the solar cell 1 provided by some embodiments of the present invention is described below with reference to fig. 2, 3 and 4.
In this embodiment, a diffusion layer 111 is formed on the silicon substrate 11, and the diffusion layer 111 includes a first diffusion portion 1111 and a second diffusion portion 1112;
the first diffusion portion 1111 is formed on the light-facing surface of the silicon substrate 11, and specifically, the first diffusion portion 1111 covers the light-facing surface of the silicon substrate 11, and the front electrode 131 is electrically connected to the first diffusion portion 1111, so that electrons are drawn out of the first diffusion portion 1111.
The second diffusion 1112 is formed on a side surface of the silicon substrate 11, specifically, the second diffusion 1112 is formed on one side surface of the silicon substrate 11, the side electrode 132 is electrically connected to the second diffusion 1112, and the second diffusion 1112 can form ohmic contact with the side electrode 132, thereby increasing a contact area between the diffusion layer 111 and the second electrode 13 and reducing an internal cell resistance.
In this embodiment, the silicon substrate 11 is P-type silicon as a silicon substrate, and phosphorus element is infiltrated into a part of the surface of the P-type silicon substrate by thermal diffusion, so as to obtain the diffusion layer 111.
At this time, the first electrode 12 is a positive electrode, and is in contact with the silicon substrate to derive positive charges; the second electrode 13 is a negative electrode, and is in contact with the diffusion layer 111 to derive negative charges.
It is understood that, in other embodiments, the silicon substrate 11 may also be an N-type silicon substrate, and the diffusion layer 111 is formed on the N-type silicon substrate 11, in which case, the first electrode 12 is a negative electrode and contacts with the silicon substrate to derive negative charges; the second electrode 13 is a positive electrode, and is in contact with the diffusion layer 111 to derive positive charges.
In a preferred embodiment, the diffusion layer 111 further includes a third diffusion layer 111, two ends of the second diffusion 1112 are respectively connected to the first diffusion 1111 and the third diffusion 1113, and the first diffusion 1111, the second diffusion 1112 and the third diffusion 1113 are integrated diffusion layer 111 structures obtained by thermal diffusion of the silicon substrate 11.
The third diffusion 1113 is formed on the back surface of the silicon substrate 11, and specifically, the third diffusion 1113 is formed at a position on the back surface of the silicon substrate 11 where the third diffusion 1113 meets the second diffusion 1112, and the third diffusion 1113 covers only a part of the back surface, and the bottom electrode 133 is electrically connected to the third diffusion 1113, and is configured to increase a contact area between the diffusion layer 111 and the second electrode 13 and to guide the second electrode 13 to the back surface of the silicon substrate 11.
In this embodiment, the front electrode 131 includes a plurality of electrode bars 1311 parallel to each other, and the electrode bars 1311 extend from one end to the other end of the first diffusion 1111 and are electrically connected to the side electrode 132.
The plurality of electrode gate lines 1311 are parallel to each other, and the plurality of electrode gate lines 1311 are disposed in parallel on the surface of the first diffusion portion 1111, so that on the premise of avoiding concentrated shielding of light, the contact area between the electrode gate lines 1311 and the first diffusion portion 1111 is increased as much as possible, electron flow at different positions on the first diffusion portion 1111 is promoted, and internal resistance is reduced.
The electrode gate line 1311, the side electrode 132, the bottom electrode 133, and the first electrode 12 may be manufactured by printing a metal paste on the silicon substrate 11 and then sintering.
The side electrode 132 covers a surface of the second diffusion 1112 facing away from the silicon substrate 11
In this embodiment, in order to increase the contact area between the second electrode 13 and the diffusion layer 111 and avoid the occurrence of electric leakage and short circuit, the side surface electrode 132 covers the surface of the second diffusion 1112 facing away from the silicon substrate 11, and the bottom surface electrode 133 covers the surface of the third diffusion 1113 facing away from the silicon substrate 11.
An aluminum back field 14 is formed on the backlight surface, the first electrode 12 is located on the aluminum back field 14, the aluminum back field 14 is isolated from the diffusion layer 111, and the isolation refers to that a gap is reserved between the aluminum back field 14 and the diffusion layer 111 or the aluminum back field is arranged in an insulating manner, specifically, the aluminum back field 14 is isolated from the second diffusion layer 111 and the third diffusion layer 111, and the aluminum back field 14 is used for leading out positive charges, and the diffusion layer 111 is used for leading out negative charges, so that the aluminum back field 14 is prevented from directly contacting the diffusion layer 111, and electric leakage can be avoided. The aluminum back field 14 can be obtained by coating an aluminum-containing slurry on the surface of the first silicon type portion and sintering, and by forming the aluminum back field 14 on the first silicon type portion, a P + layer doped with a high aluminum concentration can be formed, so that the probability of minority carriers being recombined on the back surface is reduced, and the current transmission between the silicon substrate 11 and the first electrode 12 is facilitated.
It should be noted that, in other embodiments, the aluminum back field 14 may also be replaced by a back field formed by other materials, such as boron back field.
In this embodiment, the solar cell sheet 1 further includes an antireflection layer 15, the antireflection layer 15 covers the light-facing surface of the silicon substrate 11, the front electrode 131 is at least partially embedded in the antireflection layer 15, and the front electrode 131 forms ohmic contact with the light-facing surface of the silicon substrate 11, specifically, the front electrode 131 is printed on the surface of the antireflection layer 15 through metal paste, and in the sintering process, the metal paste of the front electrode 131 burns through the reflective layer below and then reacts with the silicon substrate 11 to form ohmic contact.
The antireflection layer 15 is a transparent layer and can be prepared by a sol-gel method, a chemical vapor deposition method or a magnetron sputtering method, and has the functions of reducing the reflection of the silicon substrate 11 to solar rays and improving the utilization rate of the rays.
The following describes a solar panel assembly structure provided by some embodiments of the present invention with reference to fig. 1, 5 and 13.
The utility model provides a solar cell panel assembly, include backsheet layer 2, first glue film 4, second glue film 3, apron layer 5 and as above solar wafer 1, backsheet layer 2, first glue film 4, solar wafer 1, second glue film 3 and apron layer 5 stack gradually.
The first glue layer 4 and the second glue layer 3 are respectively and independently selected from one or more of ethylene-vinyl acetate copolymer, polyvinyl butyral, transparent silica gel layer and polyolefin layer.
As shown in fig. 1, the back plate layer 2 further includes a bottom plate 21 and an insulating layer 22, the metal conductive members 25 and the insulating layer 22 are both located on the top of the bottom plate 21, the plurality of solar cells 1 are electrically connected by the metal conductive members 25, and the insulating layer 22 covers a region exposed at the periphery of the metal circuit layer on the bottom plate 21.
The above-mentioned assembly method of the back sheet layer 2 and the solar cell sheet 1 has the following advantages: the welding difficulty and the operation difficulty of assembly arrangement are reduced, and the potential safety hazard problems of short circuit, electric leakage, matrix deformation, fracture and the like caused in the welding and arrangement process are avoided.
The insulating layer 22 is a white reflecting layer, light rays which penetrate through the cover plate layer 5 and enter gaps between the solar cells 1 are reflected by the white reflecting layer and then enter the cover plate layer 5, and the light rays are further reflected to the solar cells 1 by the cover plate layer 5 to be utilized, so that the photon utilization rate is further improved, and the output power of the photovoltaic module is improved.
In this embodiment, the insulating layer 22 is a polymer material layer containing a white filler, and the white filler includes one or more of white carbon black and titanium dioxide.
The polymer material layer is at least one of a fluorocarbon resin layer, a polydiallyl isophthalate layer, a polyvinylidene fluoride layer, a polyethylene layer, a polytetrafluoroethylene layer, a fluorocarbon resin modified polymer layer, a polydiallyl isophthalate modified polymer layer, a polyvinylidene fluoride modified polymer layer, a polyethylene modified polymer layer and a polytetrafluoroethylene modified polymer layer. Has the characteristics of high reflectivity, excellent aging resistance and the like.
The white reflective layer is closely attached to the base plate 21 by coating, printing, spraying and other processing techniques.
In this embodiment, cover sheet layer 5 comprises one or more combinations of a photovoltaic glass layer, a coated anti-reflective glass layer, and a textured anti-reflective glass layer.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (18)

1. A solar cell panel assembly is characterized by comprising a back panel layer and a plurality of solar cells arranged on the back panel layer, wherein each solar cell comprises a silicon substrate, a first electrode and a second electrode, the silicon substrate is provided with a light-facing surface, a light-facing surface and a side surface surrounding between the light-facing surface and the light-facing surface, the first electrode is positioned on the light-facing surface of the silicon substrate, the second electrode comprises a side electrode and a front electrode which are electrically connected with each other, the side electrode is positioned on the side surface of the silicon substrate, and the front electrode is positioned on the light-facing surface of the silicon substrate;
a metal conductive piece is arranged on the back plate layer and comprises a metal bottom surface and a protruding metal, and the protruding metal is formed by the upward protrusion of the metal bottom surface;
two adjacent solar cells are electrically connected through the metal conductive piece, the metal bottom surface is electrically connected with the first electrode of one solar cell, and the protruding metal is electrically connected with the side electrode of the other solar cell.
2. The solar panel assembly of claim 1, wherein the second electrode further comprises a bottom electrode on a back side of the silicon substrate, the bottom electrode being electrically connected to the side electrode.
3. The solar panel assembly of claim 2, wherein the bottom electrode of the another solar cell sheet is electrically connected to the metal bottom surface.
4. The solar cell panel assembly of claim 3, wherein the metal conductive member is of an inverted T-shaped structure, the protruding metal is located at a top middle position of the bottom surface of the metal and protrudes upwards, and of two adjacent solar cells, the first electrode of one solar cell and the bottom electrode of the other solar cell are respectively located at two sides of the protruding metal and are in electrical contact with the bottom surface of the metal, and the side electrode of the other solar cell is in electrical contact with the protruding metal.
5. The solar panel assembly of claim 3, wherein the metal conductive member is an L-shaped structure, the protruding metal is located at an edge position of the bottom surface of the metal and protrudes upwards, and of two adjacent solar panels, the first electrode of one solar panel and the bottom electrode of the other solar panel are both located at the same side of the protruding metal and are in electrical contact with the bottom surface of the metal, and the side electrode of the other solar panel is in electrical contact with the protruding metal.
6. The solar panel assembly according to claim 4 or 5, wherein the silicon substrate has a rectangular structure, the first electrode and the bottom electrode are respectively located on two sides of the backlight surface along a width direction, the first electrode extends along an end edge of the backlight surface to form a stripe structure, and the bottom electrode extends along an end edge of the backlight surface to form a stripe structure.
7. The solar panel assembly according to claim 1, wherein a diffusion layer is formed on the silicon substrate, the diffusion layer including a first diffusion portion and a second diffusion portion;
the first diffusion part is formed on a light-facing surface of the silicon substrate, and the front electrode is electrically connected with the first diffusion part;
the second diffusion portion is formed on a side surface of the silicon substrate, and the side surface electrode is electrically connected to the second diffusion portion.
8. The solar cell panel assembly according to claim 2, wherein a diffusion layer is formed on the silicon substrate, the diffusion layer including a first diffusion, a second diffusion, and a third diffusion, both ends of the second diffusion being connected to the first diffusion and the third diffusion, respectively;
the first diffusion part is formed on a light-facing surface of the silicon substrate, and the front electrode is electrically connected with the first diffusion part;
the second diffusion portion is formed on a side surface of the silicon substrate, and the side surface electrode is electrically connected to the second diffusion portion;
the third diffusion portion is formed on a backlight surface of the silicon substrate, and the bottom electrode is electrically connected to the third diffusion portion.
9. The solar panel assembly according to claim 7 or 8, wherein the front electrode includes a plurality of electrode grids parallel to each other, the electrode grids extending from one end to the other end of the first diffusion portion and electrically connected to the side electrodes.
10. The solar panel assembly according to claim 7 or 8, wherein the side electrode covers a surface of the second diffusion facing away from the silicon substrate.
11. The solar panel assembly of claim 8, wherein the bottom surface electrode covers a surface of the third diffusion portion facing away from the silicon substrate.
12. The solar panel assembly according to claim 7 or 8, wherein an aluminum back field is formed on a backlight surface of the silicon substrate, the first electrode is located on the aluminum back field, and the aluminum back field and the diffusion layer are isolated from each other.
13. The solar panel assembly of claim 1, wherein the solar cell sheet further comprises an anti-reflective layer covering the light-facing surface of the silicon substrate, wherein the front electrode is at least partially embedded in the anti-reflective layer, and wherein the front electrode is in ohmic contact with the light-facing surface of the silicon substrate.
14. The solar panel assembly of claim 1, wherein the back sheet layer further comprises a bottom sheet and an insulating layer, the metal conductive element and the insulating layer are both located on top of the bottom sheet, and the insulating layer covers a region of the bottom sheet exposed at the periphery of the metal conductive element.
15. The solar panel assembly of claim 14, wherein the insulating layer is a white light reflecting layer.
16. The solar panel assembly of claim 15, wherein the insulating layer is a polymer material layer containing a white filler, and the white filler comprises white carbon black and/or titanium dioxide.
17. The solar panel assembly of claim 1, further comprising a first adhesive layer, a second adhesive layer, and a cover plate layer, wherein the back plate layer, the first adhesive layer, the solar cell sheet, the second adhesive layer, and the cover plate layer are sequentially stacked.
18. The solar panel assembly of claim 17, wherein the cover sheet layer comprises one or more combinations of a photovoltaic glass layer, a coated anti-reflective glass layer, and a textured anti-reflective glass layer.
CN201710523281.2A 2017-06-30 2017-06-30 Solar panel assembly Active CN109216475B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710523281.2A CN109216475B (en) 2017-06-30 2017-06-30 Solar panel assembly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710523281.2A CN109216475B (en) 2017-06-30 2017-06-30 Solar panel assembly

Publications (2)

Publication Number Publication Date
CN109216475A CN109216475A (en) 2019-01-15
CN109216475B true CN109216475B (en) 2020-05-22

Family

ID=64977060

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710523281.2A Active CN109216475B (en) 2017-06-30 2017-06-30 Solar panel assembly

Country Status (1)

Country Link
CN (1) CN109216475B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112466965B (en) 2020-11-19 2022-06-03 晶科绿能(上海)管理有限公司 Back contact solar cell piece with extension electrode and solar cell module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110122A (en) * 1976-05-26 1978-08-29 Massachusetts Institute Of Technology High-intensity, solid-state-solar cell device
CN205863186U (en) * 2016-06-30 2017-01-04 比亚迪股份有限公司 Cell piece assembly, cell piece matrix and solar module
CN205863187U (en) * 2016-06-30 2017-01-04 比亚迪股份有限公司 Cell piece assembly, cell piece matrix and solar module

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6399990B2 (en) * 2015-09-28 2018-10-03 株式会社豊田自動織機 Interconnector and solar panel

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110122A (en) * 1976-05-26 1978-08-29 Massachusetts Institute Of Technology High-intensity, solid-state-solar cell device
CN205863186U (en) * 2016-06-30 2017-01-04 比亚迪股份有限公司 Cell piece assembly, cell piece matrix and solar module
CN205863187U (en) * 2016-06-30 2017-01-04 比亚迪股份有限公司 Cell piece assembly, cell piece matrix and solar module

Also Published As

Publication number Publication date
CN109216475A (en) 2019-01-15

Similar Documents

Publication Publication Date Title
KR102018652B1 (en) Solar cell
KR20140003691A (en) Solar cell module and ribbon assembly
CN103489934A (en) Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof
KR20120062431A (en) Solar cell
EP3588585B1 (en) P-type perc double-sided solar cell, assembly thereof, system thereof and preparation method therefor
JP2023179703A (en) Electrode structure of rear contact battery, battery, module, and battery system
US20190305155A1 (en) Solar cell and solar cell module
KR101612133B1 (en) Metal Wrap Through type solar cell and method for fabricating the same
US20190131475A1 (en) Photovoltaic cell, photovoltaic cell array, solar cell, and method for preparing photovoltaic cell
KR20140095658A (en) Solar cell
CN108615775B (en) Interdigital back contact heterojunction monocrystalline silicon battery
US20180294367A1 (en) Back contact solar cell substrate, method of manufacturing the same and back contact solar cell
CN109216475B (en) Solar panel assembly
KR20100130931A (en) Solar cell and manufacturing method of the same
CN107564974B (en) Cell, cell matrix, solar cell and preparation method of cell
CN107579122B (en) Cell, cell matrix, solar cell and preparation method of cell
CN110690308A (en) Back contact heterojunction solar cell and module thereof
CN209785947U (en) MWT solar cell, cell string and cell module
JP6298152B2 (en) Solar cell and solar cell module using the same
CN108922934B (en) Double-sided direct-connection solar cell module and preparation method thereof
KR20120081417A (en) Solar cell and manufacturing method of the same
CN218548446U (en) Solar cell and photovoltaic module
US11848392B2 (en) Solar cell and photovoltaic module
AU2022209308B2 (en) Photovoltaic Module
CN219019439U (en) Perovskite battery, battery pack and photovoltaic system

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant