CN102840833A - Method and device for measuring thickness of wafer - Google Patents
Method and device for measuring thickness of wafer Download PDFInfo
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- CN102840833A CN102840833A CN 201210335399 CN201210335399A CN102840833A CN 102840833 A CN102840833 A CN 102840833A CN 201210335399 CN201210335399 CN 201210335399 CN 201210335399 A CN201210335399 A CN 201210335399A CN 102840833 A CN102840833 A CN 102840833A
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Abstract
The invention provides a method and a device for measuring thickness of a wafer. The method is characterized in that the wafer is kept in a vertical state during measurement and a vacuum chuck is also arranged vertically, so that the gravity of each point on the surface of the wafer is parallel to the surface of the wafer under the condition that the wafer is adsorbed. According to the invention, the problems of the surface damage and the surface fracture of the wafer easily caused by adopting a contact probe in the existing wafer for the vertical measurement, as well as the problems that the measurement accuracy of the non-contact measurement for transparent materials and surface high-brightness materials cannot meet market requirements and the like, are solved.
Description
Technical field
The present invention relates to the Technology of Precision Measurement field, particularly a kind of wafer thickness measuring method and device.
Background technology
As the core product of field of solar energy, the quality of wafer (wafer) is determining the ups and downs of the sector, around the processing and manufacturing of wafer technology and quality control standard in develop rapidly, to satisfy the increasingly high performance requirement in market.
Wafer is the laminar sheet material of fragility; Generally constitute by 4 layer materials; The 1st layer is wafer layer, the 2nd layer for bonding agent, the 3rd layer are adhesive tape for glass, the 4th layer, is made into the wafer finished product through process for pressing between each layer, carries out the processing such as line, cutting of next procedure again.And the thickness evenness of wafer finished product will determine the later process crudy, and the self performance of final influence processing back product wafer.Therefore; Close in the technology at each lamination of wafer, need the thickness evenness of strict control pressing layer, and finally guarantee the thickness evenness of wafer finished product after the pressing; Measure so need carry out thickness evenness, to carry out the quality control in each process procedure through the high-precision test technology.
Traditional wafer measuring method; No matter be to adopt contact or contactless; All be earlier wafer level to be placed; Adopt the vacuum suction mode that wafer is fixed, beat vertically downward at crystal column surface with the Z axle drive contact measuring head or the contactless laser beam that are installed in the vertical layout of relative wafer fixed horizontal plane again, wafer is measured.In this measuring method, wafer each point in measuring process can receive action of gravity, as adopting contact measurement method; Gauge head acts on the crystal column surface vertically downward; Just receive gravity direction identical, thereby cause downward acting force to become bigger, more be prone to cause wafer cracked with its surperficial each point.And for non-contact measurement; Because adopting laser irradiation mode measures; Can be difficult to unification because of the reflective effect difference of different measuring material causes each layer measurement data, especially measure to the high brightness top layer behind glassy layer and the finished product, can be because material be transparent or the highlight surface degree influences measuring accuracy; Cause the measurement data distortion, measuring accuracy is difficult to satisfy wafer quality control requirement.In addition, in the measuring method, gauge head was driven by the Z axle and moved downward in the past, because the linearity error that the Z axle moves up and down influence causes being difficult to guarantee the verticality of each measurement point gauge head or laser beam and crystal column surface, thereby precision is had certain influence.
Summary of the invention
In order one of to address the above problem at least; One aspect of the present invention has proposed a kind of wafer thickness measuring method; It is characterized in that, wafer is kept plumbness in measuring process, the same vertical layout of vacuum cup; When guaranteeing to adsorb wafer, the suffered gravity of crystal column surface each point is parallel to crystal column surface.
Preferred as technique scheme; Said wafer thickness measuring method adopts the contact measuring head of landscape layout, and the right side probe of said contact measuring head stretches out to the right under air blowing air pressure and precision spring effect and contacts with crystal column surface from horizontal direction, and the maintenance ergometry is controlled in the measuring process; Ergometry acts on the crystal column surface like this; Just vertical each other with this some place self gravitation direction, also avoided the influence of gauge head self gravitation simultaneously, and through pressure technology and precision spring; Accurately the control contact has been evaded to greatest extent and has been adopted contact measuring head to bring surface damage and cracked risk to wafer at the ergometry of crystal column surface.
Preferred as technique scheme; The left side of said contact measuring head is symmetrically installed with the left side probe, and the calibrated bolck of the said left side probe moment with its left side keeps in touch, and this calibrated bolck surface is parallel with Z axle direction of motion with the Y axle; When carrying out thickness measure; The right side probe reads the one-tenth-value thickness 1/10 L of crystal column surface point, and the left side probe reads the error amount K that gauge head is produced at relative standard's piece on Y axle, Z axle motion this aspect of living in, this one-tenth-value thickness 1/10 H=L-K on the actual wafer; Thereby compensated the side direction error that in motion process, is produced because of Y axle, Z axle, further improved the wafer thickness measuring accuracy.
The present invention has proposed a kind of wafer thickness measurement mechanism on the other hand, it is characterized in that, comprises vacuum cup; Contact measuring head, the Z axle moves plate, moving plate of Y axle and calibrated bolck; The vertical layout of said vacuum cup; Said Y axle moves the plate level layout, and the moving plate vertical fixing of said Z axle is on the moving plate of Y axle, and said contact measuring head is fixed on the moving plate of Z axle and is in horizontality.
Preferred as technique scheme, said contact measuring head symmetria bilateralis is equipped with left side probe and right side probe.
Another aspect of the invention has proposed a kind of method according to said apparatus measurement wafer thickness, it is characterized in that, may further comprise the steps:
S1: before the measurement, the calibrated bolck that will on vacuum cup, to place a thickness be A lets vacuum cup that absorption is fixed;
S2: let moving plate of Y axle and the moving plate of Z axle drive contact measuring head together and move to a certain position, calibrated bolck surface; From the laser displacement sensor at probe rear portion, left side, reading this point corresponding Y axle and Z axle this moment is Δ X1 in the kinematic error value; It is Δ X2 that the laser displacement sensor at probe rear portion, right side reads this shift value; This some Y of place axial coordinate is Y1, and the Z axial coordinate is Z1;
S3: take off the calibrated bolck on the vacuum cup; Change tested wafer; Again absorption fixes; Let Y axle and Z axle drive contact measuring head again and move to Y1 and Z1 position, keep corresponding Y axle of this point and Z axle at kinematic error value Δ X1, the value that corresponding right survey gauge head rear portion laser displacement sensor reads is Δ X3;
S4: actual wafer is at the one-tenth-value thickness 1/10 δ at this some place 1=A+ Δ X2-Δ X3-Δ X1.
Preferred as technique scheme; Said method also comprises step S5: when measuring the 2nd point; Y axle and Z axle drive contact measuring head and move to Y2 and Z2 position, and corresponding Y axle and Z axle kinematic error value are that Δ X11 (read from the left side by probe rear portion laser displacement sensor.And from the right side probe rear portion read measured value be Δ X33, at this dot thickness value δ 2=A+ Δ X2-Δ X33-Δ X11, in this way, the one-tenth-value thickness 1/10 that can measure on the crystal column surface to be had a few.
The wafer thickness measuring method that the present invention proposes; Solving in the past, wafer adopts damage of contact measuring head vertical survey being prone to cause crystal column surface and cracked problem to be difficult to reach problems such as market demands with the employing non-contact measurement to transparent material and highlight surface Materials Measurement precision; In addition; Axial system error in the time of can also moving through the compensation gauge head further improves measuring accuracy, for the wafer thickness measurement provides a kind of measuring accuracy high, easy to use measuring method.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work property, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the wafer thickness measurement mechanism structural representation of the embodiment of the invention.
Label among the figure: the 1-vacuum cup, 2-Y axis linear degree, 3-Z axis linear degree, the 4-Z axle moves plate, the 5-calibrated bolck, the 6-Y axle moves plate, 7-contact measuring head, the tested wafer of 8-.
Embodiment
To combine accompanying drawing of the present invention below, technical scheme of the present invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
The wafer thickness measuring method of the embodiment of one aspect of the present invention; It is characterized in that, wafer is kept plumbness in measuring process, the same vertical layout of vacuum cup; When guaranteeing to adsorb wafer, the suffered gravity of crystal column surface each point is parallel to crystal column surface.
In one embodiment of the invention; Said wafer thickness measuring method adopts the contact measuring head of landscape layout, and the right side probe of said contact measuring head stretches out to the right under air blowing air pressure and precision spring effect and contacts with crystal column surface from horizontal direction, and the maintenance ergometry is controlled in the measuring process; Ergometry acts on the crystal column surface like this; Just vertical each other with this some place self gravitation direction, also avoided the influence of gauge head self gravitation simultaneously, and through pressure technology and precision spring; Accurately the control contact has been evaded to greatest extent and has been adopted contact measuring head to bring surface damage and cracked risk to wafer at the ergometry of crystal column surface.
In one embodiment of the invention; The left side of said contact measuring head is symmetrically installed with the left side probe, and the calibrated bolck of the said left side probe moment with its left side keeps in touch, and this calibrated bolck surface is parallel with Z axle direction of motion with the Y axle; When carrying out thickness measure; The right side probe reads the one-tenth-value thickness 1/10 L of crystal column surface point, and the left side probe reads the error amount K that gauge head is produced at relative standard's piece on Y axle, Z axle motion this aspect of living in, this one-tenth-value thickness 1/10 H=L-K on the actual wafer; Thereby compensated the side direction error that in motion process, is produced because of Y axle, Z axle, further improved the wafer thickness measuring accuracy.
The embodiment of a kind of wafer thickness measurement mechanism that the present invention proposes on the other hand is as shown in Figure 1, and it comprises vacuum cup 1, contact measuring head 7; The Z axle moves plate 4; Moving plate 6 of Y axle and calibrated bolck 5, said vacuum cup 1 vertical layout, said Y axle moves plate 6 horizontal layout; Moving plate 4 vertical fixing of said Z axle are on the moving plate 6 of Y axle, and said contact measuring head 7 is fixed on the moving plate 4 of Z axle and is in horizontality.In one embodiment of the invention, said contact measuring head 7 symmetria bilateralis are equipped with left side probe and right side probe.The right side probe keeps and tested wafer 8 Surface Vertical during measurement, and the left side probe is vertical each other with the calibrated bolck that is parallel to the Y axle 5.Calibrated bolck 5 has high flatness; When contact measuring head 7 moves forward and backward along with the Y axle or moves up and down along with the Z axle; Y axle and the Z axle linearity error on direction of motion separately is respectively Y axis linear degree 2 and z axis property degree 3, and during measurement, the left side probe stretches out left through air pressure and precision spring; Keep contacting, thereby can accurately read through the laser displacement sensor at probe rear portion, left side with calibrated bolck 5 surfaces.And the right side probe stretches out to the right through air pressure and precision spring equally, keep contacting with tested wafer 8 surfaces, and can be through blow gas pressure control surface contact force size, in order to avoid damage is caused on tested wafer 8 surfaces.
Another aspect of the invention proposes, and a kind of embodiment that measures the method for wafer thickness according to said apparatus may further comprise the steps:
S1: before the measurement, the calibrated bolck that will on vacuum cup, to place a thickness be A lets vacuum cup that absorption is fixed;
S2: let moving plate of Y axle and the moving plate of Z axle drive contact measuring head together and move to a certain position, calibrated bolck surface; From the laser displacement sensor at probe rear portion, left side, reading this point corresponding Y axle and Z axle this moment is Δ X1 in the kinematic error value; It is Δ X2 that the laser displacement sensor at probe rear portion, right side reads this shift value; This some Y of place axial coordinate is Y1, and the Z axial coordinate is Z1;
S3: take off the calibrated bolck on the vacuum cup; Change tested wafer; Again absorption fixes; Let Y axle and Z axle drive contact measuring head again and move to Y1 and Z1 position, keep corresponding Y axle of this point and Z axle at kinematic error value Δ X1, the value that corresponding right survey gauge head rear portion laser displacement sensor reads is Δ X3;
S4: actual wafer is at the one-tenth-value thickness 1/10 δ at this some place 1=A+ Δ X2-Δ X3-Δ X1.
In one embodiment of the invention; Said method also comprises step S5: when measuring the 2nd point; Y axle and Z axle drive contact measuring head and move to Y2 and Z2 position, and corresponding Y axle and Z axle kinematic error value are that Δ X11 (read from the left side by probe rear portion laser displacement sensor.And from the right side probe rear portion read measured value be Δ X33, at this dot thickness value δ 2=A+ Δ X2-Δ X33-Δ X11, in this way, the one-tenth-value thickness 1/10 that can measure on the crystal column surface to be had a few.
The wafer thickness measuring method of the above embodiment of the present invention; Solving in the past, wafer adopts damage of contact measuring head vertical survey being prone to cause crystal column surface and cracked problem to be difficult to reach problems such as market demands with the employing non-contact measurement to transparent material and highlight surface Materials Measurement precision; Axial system error in the time of can also moving through the compensation gauge head in addition; Further improve measuring accuracy; For the wafer thickness measurement provides a kind of measuring accuracy high, easy to use measuring method; Improve the quality control ability in the wafer machining process, can guarantee that the wafer of being processed has the thickness evenness that meets the application market requirement, further improves wafer end properties quality.
The above; Be merely embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technician who is familiar with the present technique field is in the technical scope that the present invention discloses; Can expect easily changing or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion by said protection domain with claim.
Claims (7)
1. a wafer thickness measuring method is characterized in that, wafer is kept plumbness in measuring process, the same vertical layout of vacuum cup, and when guaranteeing to adsorb wafer, the suffered gravity of crystal column surface each point is parallel to crystal column surface.
2. wafer thickness measuring method as claimed in claim 1; It is characterized in that; Said wafer thickness measuring method adopts the contact measuring head of landscape layout, and the right side probe of said contact measuring head stretches out to the right under air blowing air pressure and precision spring effect and contacts with crystal column surface from horizontal direction, and the maintenance ergometry is controlled in the measuring process; Ergometry acts on the crystal column surface like this, and is just vertical each other with this some place self gravitation direction.
3. wafer thickness measuring method as claimed in claim 1; It is characterized in that the left side of said contact measuring head is symmetrically installed with the left side probe, the calibrated bolck of the said left side probe moment with its left side keeps in touch; This calibrated bolck surface is parallel with Z axle direction of motion with the Y axle; When carrying out thickness measure, the right side probe reads the one-tenth-value thickness 1/10 L of crystal column surface point, and the left side probe reads the error amount K that gauge head is produced at relative standard's piece on Y axle, Z axle motion this aspect of living in; This one-tenth-value thickness 1/10 H=L-K on the actual wafer, thus compensated the side direction error that in motion process, is produced because of Y axle, Z axle.
4. a wafer thickness measurement mechanism is characterized in that, comprises vacuum cup; Contact measuring head, the Z axle moves plate, moving plate of Y axle and calibrated bolck; The vertical layout of said vacuum cup; Said Y axle moves the plate level layout, and the moving plate vertical fixing of said Z axle is on the moving plate of Y axle, and said contact measuring head is fixed on the moving plate of Z axle and is in horizontality.
5. wafer thickness measurement mechanism as claimed in claim 4, said contact measuring head symmetria bilateralis are equipped with left side probe and right side probe.
6. a method of measuring wafer thickness is characterized in that, may further comprise the steps:
S1: before the measurement, the calibrated bolck that will on vacuum cup, to place a thickness be A lets vacuum cup that absorption is fixed;
S2: let moving plate of Y axle and the moving plate of Z axle drive contact measuring head together and move to a certain position, calibrated bolck surface; From the laser displacement sensor at probe rear portion, left side, reading this point corresponding Y axle and Z axle this moment is Δ X1 in the kinematic error value; It is Δ X2 that the laser displacement sensor at probe rear portion, right side reads this shift value; This some Y of place axial coordinate is Y1, and the Z axial coordinate is Z1;
S3: take off the calibrated bolck on the vacuum cup; Change tested wafer; Again absorption fixes; Let Y axle and Z axle drive contact measuring head again and move to Y1 and Z1 position, keep corresponding Y axle of this point and Z axle at kinematic error value Δ X1, the value that corresponding right survey gauge head rear portion laser displacement sensor reads is Δ X3;
S4: actual wafer is at the one-tenth-value thickness 1/10 δ at this some place 1=A+ Δ X2-Δ X3-Δ X1.
7. the method for measurement wafer thickness as claimed in claim 6; It is characterized in that; Said method also comprises step S5: when measuring the 2nd point; Y axle and Z axle drive contact measuring head and move to Y2 and Z2 position, and corresponding Y axle and Z axle kinematic error value are that Δ X11 (read from the left side by probe rear portion laser displacement sensor.And from the right side probe rear portion read measured value be Δ X33, at this dot thickness value δ 2=A+ Δ X2-Δ X33-Δ X11, through this kind mode, the one-tenth-value thickness 1/10 that can measure on the crystal column surface to be had a few.
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| CN 201210335399 CN102840833A (en) | 2012-09-12 | 2012-09-12 | Method and device for measuring thickness of wafer |
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| CN 201210335399 CN102840833A (en) | 2012-09-12 | 2012-09-12 | Method and device for measuring thickness of wafer |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104316014A (en) * | 2014-10-21 | 2015-01-28 | 西安交通大学 | Rapid measurement route planning method of sections of blades of aviation engine |
| CN110757278A (en) * | 2019-10-23 | 2020-02-07 | 清华大学 | Wafer thickness measuring device and grinding machine |
| CN111192837A (en) * | 2020-01-03 | 2020-05-22 | 嘉兴百盛光电有限公司 | Method for testing warping degree of wafer |
| CN112556590A (en) * | 2020-12-04 | 2021-03-26 | 北京中电科电子装备有限公司 | Wafer measuring device, thickness measuring method and thickness measuring device |
| CN112880597A (en) * | 2019-12-26 | 2021-06-01 | 南京力安半导体有限公司 | Method for measuring wafer flatness |
| CN116255917A (en) * | 2023-02-23 | 2023-06-13 | 泰微科技(珠海)有限公司 | Wafer thickness measuring method and device |
-
2012
- 2012-09-12 CN CN 201210335399 patent/CN102840833A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104316014A (en) * | 2014-10-21 | 2015-01-28 | 西安交通大学 | Rapid measurement route planning method of sections of blades of aviation engine |
| CN104316014B (en) * | 2014-10-21 | 2017-04-19 | 西安交通大学 | Rapid measurement route planning method of sections of blades of aviation engine |
| CN110757278A (en) * | 2019-10-23 | 2020-02-07 | 清华大学 | Wafer thickness measuring device and grinding machine |
| CN112880597A (en) * | 2019-12-26 | 2021-06-01 | 南京力安半导体有限公司 | Method for measuring wafer flatness |
| CN111192837A (en) * | 2020-01-03 | 2020-05-22 | 嘉兴百盛光电有限公司 | Method for testing warping degree of wafer |
| CN111192837B (en) * | 2020-01-03 | 2023-03-28 | 浙江百盛光电股份有限公司 | Method for testing warping degree of wafer |
| CN112556590A (en) * | 2020-12-04 | 2021-03-26 | 北京中电科电子装备有限公司 | Wafer measuring device, thickness measuring method and thickness measuring device |
| CN116255917A (en) * | 2023-02-23 | 2023-06-13 | 泰微科技(珠海)有限公司 | Wafer thickness measuring method and device |
| CN116255917B (en) * | 2023-02-23 | 2023-08-29 | 泰微科技(珠海)有限公司 | Wafer thickness measuring method and device |
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Application publication date: 20121226 |