CN102834476B - 一种化学机械抛光液 - Google Patents
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- 238000005498 polishing Methods 0.000 title claims abstract description 70
- 239000007788 liquid Substances 0.000 title claims abstract description 20
- 239000000126 substance Substances 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 150000003839 salts Chemical class 0.000 claims abstract description 19
- 230000007704 transition Effects 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 32
- 239000012530 fluid Substances 0.000 claims description 24
- 229910052709 silver Inorganic materials 0.000 claims description 10
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 8
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical group [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 claims description 7
- 229910002651 NO3 Inorganic materials 0.000 claims description 5
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000003002 pH adjusting agent Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910002012 Aerosil® Inorganic materials 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052721 tungsten Inorganic materials 0.000 abstract description 17
- 239000010937 tungsten Substances 0.000 abstract description 17
- -1 iron ion Chemical class 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000004332 silver Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- BYGOPQKDHGXNCD-UHFFFAOYSA-N tripotassium;iron(3+);hexacyanide Chemical compound [K+].[K+].[K+].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] BYGOPQKDHGXNCD-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical group [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 239000012425 OXONE® Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229960004887 ferric hydroxide Drugs 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-N iodic acid Chemical class OI(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-N 0.000 description 1
- IEECXTSVVFWGSE-UHFFFAOYSA-M iron(3+);oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Fe+3] IEECXTSVVFWGSE-UHFFFAOYSA-M 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- HJKYXKSLRZKNSI-UHFFFAOYSA-I pentapotassium;hydrogen sulfate;oxido sulfate;sulfuric acid Chemical compound [K+].[K+].[K+].[K+].[K+].OS([O-])(=O)=O.[O-]S([O-])(=O)=O.OS(=O)(=O)O[O-].OS(=O)(=O)O[O-] HJKYXKSLRZKNSI-UHFFFAOYSA-I 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明公开了一种化学机械抛光液,其含有水,研磨剂,氧化剂和两种或两种以上的非铁过渡元素金属盐。本发明的化学机械抛光液可显著提高钨的抛光速度。
Description
技术领域
本发明涉及一种化学机械抛光液,具体涉及一种含有两种或两种以上的非铁过渡元素金属盐的抛光液。
背景技术
随着半导体技术的不断发展,以及大规模集成电路互连层的不断增加,导电层和绝缘介质层的平坦化技术变得尤为关键。二十世纪80年代,由IBM公司首创的化学机械抛光(CMP)技术被认为是目前全局平坦化的最有效的方法。
化学机械抛光(CMP)由化学作用、机械作用以及这两种作用结合而成。它通常由一个带有抛光垫的研磨台,及一个用于承载芯片的研磨头组成。其中研磨头固定住芯片,然后将芯片的正面压在抛光垫上。当进行化学机械抛光时,研磨头在抛光垫上线性移动或是沿着与研磨台一样的运动方向旋转。与此同时,含有研磨剂的浆液被滴到抛光垫上,并因离心作用平铺在抛光垫上。芯片表面在机械和化学的双重作用下实现全局平坦化。
对金属层机械抛光(CMP)的主要机制被认为是:氧化剂先将金属表面氧化成膜,以二氧化硅和氧化铝为代表的研磨剂将该层氧化膜机械去除,产生新的金属表面继续被氧化,这两种作用协同进行。
作为机械抛光(CMP)对象之一的金属钨,在高电流密度下,抗电子迁移能力强,并且能够与硅形成很好的欧姆接触,所以可作为接触窗及介层洞的填充金属及扩散阻挡层。
针对钨机械抛光(CMP),常用的氧化剂主要有含铁金属盐类,碘酸盐类以及双氧水等。
1991年,F.B.Kaufman等报道了将铁氰化钾用于钨机械抛光(CMP)技术。(″ChemicalMechanicalPolishingforFabricatingPatternedWMetalFeaturesasChipInterconnects″,JoumaloftheElectrochemicalSociety,Vol.138,No.11,1991年11月)。
美国专利5340370公开了一种用于钨机械抛光(CMP)的配方,其中含有0.1M铁氰化钾,5%氧化硅,同时含有作为pH缓冲剂的醋酸盐。
美国专利5527423,美国专利6008119,美国专利6284151等公开了将Fe(NO3)3,氧化铝体系用于钨机械抛光(CMP)的方法。该抛光体系在静态腐蚀速率(staticetchrate)方面具有优势,但是在产品缺陷(defect)方面存在显著不足。
美国专利5225034,美国专利5354490公开了将双氧水和硝酸银用做氧化剂的抛光方法。美国专利5958288公开了将硝酸铁用做催化剂,双氧水用做氧化剂,进行钨化学机械抛光的方法。由于铁离子的存在,双氧水会迅速分解失效,因此该抛光液存在稳定性差的问题。
美国专利5980775和美国专利6068787在美国专利5958288基础上,加入有机酸做稳定剂,降低了双氧水的分解速率。但是由于有机酸的引入,使得抛光液pH值较低(通常低于2.7左右),容易造成设备的腐蚀。此外,含有硝酸铁的抛光液,pH值调节范围很窄。因为当pH值高于2.7时,硝酸铁会水解,生成氢氧化铁沉淀,造成抛光液失效。在环保上,由于有机酸的加入,提高了抛光废液中有机物含量(COD)。
在上述抛光液中,都没有提到锰离子的特殊作用,更没有提到银离子和锰离子结合后产生的协同作用。所述协同所用使得抛光液在过氧化物存在的情况下,对钨的抛光产生意想不到的积极效果。
发明内容
本发明所要解决的技术问题是用含有两种或两种以上具有协同作用的非铁过渡元素金属盐和过氧化物的化学机械抛光液,来显著提高钨抛光速度。
本发明的化学机械抛光液,含有水,研磨剂,氧化剂和两种或两种以上的非铁过渡元素金属盐。所述的两种或两种以上的非铁过渡元素金属盐具有协同作用。所述的两种或两种以上的非铁过渡元素金属盐中的任一种,在单独存在的情况下,其与氧化剂的组合物对钨的抛光速度没有显著提升的作用。
本发明中,所述的研磨剂为气相二氧化硅、硅溶胶、氧化铝、氧化铈中的一种或多种。
本发明中,所述的研磨剂的重量百分比为0.1~20%,优选为0.5~3%。
本发明中,所述的氧化剂为过氧化物。
本发明中,所述的过氧化物为过氧化氢或单过硫酸氢盐,优选为过氧化氢(双氧水)。
本发明中,所述的氧化剂的重量百分比为0.1~10%。
本发明中,所述的非铁过渡元素金属盐选自Sc,Ti,V,Cr,Mn,Co,Ni,Cu,Zn,Zr,Mo,Ag金属盐,优选为Mn,Ag金属盐。
本发明中,所述的Mn金属盐重量百分比0.05%~2%,优选为0.05~1%。
本发明中,所述的Ag金属盐重量百分比0.05%~2%,优选为0.05~0.2%。
本发明中,所述的非铁过渡元素金属盐为非铁过渡元素无机酸盐和/或非铁过渡元素有机酸盐。
本发明中,所述的有机酸盐为柠檬酸盐。
本发明中,所述的两种非铁过渡元素金属盐为硝酸盐和硫酸盐。
本发明中,所述的硝酸盐和硫酸盐为硝酸银和硫酸锰。
本发明中,所述的抛光液进一步含有pH调节剂。
本发明中,所述的抛光液的pH值为0.5~4.5。
本发明的积极进步效果在于:
1、用一种含有两种或两种以上具有协同作用的非铁过渡元素金属盐和过氧化物的化学机械抛光液,来显著提高了钨的抛光速度。
2、在不加入双氧水稳定剂的情况下,所述化学机械抛光液中的双氧水仍能非常稳定地存在于抛光液中。
3、所述化学机械抛光液中不含有机物(稳定剂,诸如有机酸等)。因此,降低了抛光废液中有机物的含量(COD排放量)。
4、所述化学机械抛光液具有更宽的pH调节范围。因此,在所述化学机械抛光液中可以通过升高pH值来降低对设备的腐蚀。
具体实施方式
下面用实施例来进一步说明本发明,但本发明并不受其限制。下述实施例中,百分比均为质量百分比。
表1给出了本发明的化学机械抛光液实施例1~14及对比例1-5的配方,按表1中所列组分及其含量,在去离子水中混合均匀,用pH调节剂调到所需pH值,即可制得化学机械抛光液。
抛光条件:抛光机台为Logitech(英国)1PM52型,IC1000抛光垫,4cm×4cm正方形晶圆(Wafer),研磨压力4psi,研磨台转速70转/分钟,研磨头自转转速150转/分钟,抛光液滴加速度100ml/分钟。
表1化学机械抛光液实施例1~14及对比例1-5
对比例1表明,只有双氧水的情况下,钨的抛光速度很低。
对比例2表明,在含过氧化氢的抛光液中,在没有锰离子存在的情况下,银离子对钨的抛光速度有提高,但不显著。
对比例3表明,在含单过硫酸氢钾的抛光液中,在没有锰离子存在的情况下,银离子对钨的抛光速度有提高,但不显著。
对比例4表明,在没有银离子存在的情况下,锰离子对钨的抛光速度没有提升作用。
对比例5表明,只有锰离子和银离子同时存在的情况下,钨的抛光速度很低。
实施例1~6表明,在氧化剂、锰离子、银离子同时存在的情况下,钨的抛光速度显著提高。
表2化学机械抛光液实施例1~6的分解时间
本发明的抛光液在双氧水、硝酸银、硫酸锰共同存在的情况下,双氧水48小时内没有明显分解。作为对比,US5958288公开的方法,在铁离子存在下,双氧水会发生Fenton反应,迅速剧烈分解失效。
Claims (11)
1.一种化学机械抛光液,由水、研磨剂、氧化剂和两种非铁过渡元素金属盐组成,其中所述的非铁过渡元素金属盐选自Mn、Ag金属盐,所述的两种非铁过渡元素金属盐为硝酸盐和硫酸盐。
2.根据权利要求1所述的抛光液,所述的研磨剂为气相二氧化硅、硅溶胶、氧化铝、氧化铈中的一种或多种。
3.根据权利要求1所述的抛光液,所述的研磨剂的重量百分比为0.1~20%。
4.根据权利要求1所述的抛光液,所述的氧化剂为过氧化物。
5.根据权利要求4所述的抛光液,所述的过氧化物为过氧化氢或单过硫酸氢盐。
6.根据权利要求1所述的抛光液,所述的氧化剂的重量百分比为0.1~10%。
7.根据权利要求1所述的抛光液,所述的Mn金属盐重量百分比0.05%~2%。
8.根据权利要求1所述的抛光液,所述的Ag金属盐重量百分比0.05%~2%。
9.根据权利要求1所述的抛光液,所述的硝酸盐和硫酸盐为硝酸银和硫酸锰。
10.一种化学机械抛光液,由水,研磨剂、氧化剂、两种非铁过渡元素金属盐和pH调节剂组成,其中所述的非铁过渡元素金属盐选自Mn、Ag金属盐,所述的两种非铁过渡元素金属盐为硝酸盐和硫酸盐。
11.根据权利要求10所述的抛光液,所述的抛光液的pH值为0.5~4.5。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4769073A (en) * | 1986-09-26 | 1988-09-06 | Rhone-Poulenc Chimie | Ceric oxide/cerous salt organic glass polishing compositions |
WO1998023408A1 (en) * | 1996-11-26 | 1998-06-04 | Cabot Corporation | A composition and slurry useful for metal cmp |
WO2003072671A1 (en) * | 2002-02-22 | 2003-09-04 | Saint-Gobain Ceramics & Plastics, Inc. | Cmp formulations for the use on nickel-phosphorus alloys |
CN1644644A (zh) * | 2003-12-22 | 2005-07-27 | Cmp罗姆和哈斯电子材料控股公司 | 用于铜的低下压力抛光的组合物和方法 |
WO2007040956A1 (en) * | 2005-09-29 | 2007-04-12 | Cabot Microelectronics Corporation | Composition and method for enhancing pot life of hydrogen peroxide-containing cmp slurries |
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US20020068454A1 (en) * | 2000-12-01 | 2002-06-06 | Applied Materials, Inc. | Method and composition for the removal of residual materials during substrate planarization |
US20050045852A1 (en) * | 2003-08-29 | 2005-03-03 | Ameen Joseph G. | Particle-free polishing fluid for nickel-based coating planarization |
KR101178719B1 (ko) * | 2008-12-29 | 2012-08-31 | 제일모직주식회사 | 구리 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
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US4769073A (en) * | 1986-09-26 | 1988-09-06 | Rhone-Poulenc Chimie | Ceric oxide/cerous salt organic glass polishing compositions |
WO1998023408A1 (en) * | 1996-11-26 | 1998-06-04 | Cabot Corporation | A composition and slurry useful for metal cmp |
WO2003072671A1 (en) * | 2002-02-22 | 2003-09-04 | Saint-Gobain Ceramics & Plastics, Inc. | Cmp formulations for the use on nickel-phosphorus alloys |
CN1644644A (zh) * | 2003-12-22 | 2005-07-27 | Cmp罗姆和哈斯电子材料控股公司 | 用于铜的低下压力抛光的组合物和方法 |
WO2007040956A1 (en) * | 2005-09-29 | 2007-04-12 | Cabot Microelectronics Corporation | Composition and method for enhancing pot life of hydrogen peroxide-containing cmp slurries |
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