CN102832320B - LED chip eutectic bonding process - Google Patents
LED chip eutectic bonding process Download PDFInfo
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- CN102832320B CN102832320B CN201210308270.XA CN201210308270A CN102832320B CN 102832320 B CN102832320 B CN 102832320B CN 201210308270 A CN201210308270 A CN 201210308270A CN 102832320 B CN102832320 B CN 102832320B
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Abstract
The invention discloses an LED chip eutectic bonding process. An LED chip is bonded to an LED chip support by bonding. The LED chip eutectic bonding process includes steps of coated part preparation, adhering, die bonding, charging, temperature increasing and frequency increasing, and temperature decreasing and frequency decreasing. The LED chip eutectic bonding process is easy to implement and operate, and requirements for large-scale assembly of LED chips can be met.
Description
Technical field
The present invention relates to LED chip assembly technology field, be specially a kind of LED chip eutectic and cohere technique.
Background technology
LED chip needs to take into full account heat dissipation problem when cohering assembling, and prior art generally adopts the method for heat sink process while ensureing heat dissipation problem, realize fixing between LED chip and LED chip support.
Prior art generally adopts that to cohere glue be elargol, because of elargol be sclerosis glue thus chip bottom can not be completely smooth cohere on radiating copper post, chip and copper post have certain gap, and radiating effect has just been had a greatly reduced quality.And the light source that this tradition coheres technique has certain light decay.
Due to the restriction of current semiconductor light-emitting-diode wafer technologies, the photoelectric conversion efficiency of LED need to improve, especially great power LED, because its power is higher, the electric energy of nearly more than 10% will become heat energy release (along with the development of semiconductor technology, photoelectric conversion efficiency can improve gradually), and this just requires that terminal client is when utilizing high power LED product, carry out heat radiation work, to guarantee that heavy-power LED product normally works.
Summary of the invention
The object of the invention is to provide a kind of LED chip eutectic and coheres technique, then Yin Xiyin mixture can first liquefy just harden when solidifying, just make LED chip seamless be fixed on LED chip support, effectively raise the contact at LED chip support bottom LED chip, improve the heat sink and life-span that is LED light source greatly.Prior art generally adopts that to cohere glue be elargol, because of elargol be sclerosis glue thus chip bottom can not be completely smooth cohere on radiating copper post, chip and copper post have certain gap, and radiating effect has just been had a greatly reduced quality.And the light source that this tradition coheres technique has certain light decay.
In order to achieve the above object, the technical solution adopted in the present invention is:
A kind of LED chip eutectic coheres technique, adopts gluing mode to be cohered on LED chip support by LED chip, it is characterized in that: comprise the following steps:
(1) prepared by painting part: adopt supersonic wave cleaning machine, first in the container of supersonic wave cleaning machine, absolute ethyl alcohol is poured into, then will treat that the container that supersonic wave cleaning machine put into by the LED chip support of gluing cleans, after cleaning, LED chip support is put into drying box with the temperature of 100 DEG C drying process 1 hour;
(2) gluing: to the LED chip support uniform application eutectic glue after step (1) process;
(3) die bond: by sapphire structures being placed by the LED chip support after step (2) gluing and being coated with the LED chip of metal substrate;
(4) feed: be fixed on by the LED chip support after step (3) die bond on eutectic machine operating desk, and open temperature and ultrasonic sensing device knob;
(5) intensification raising frequency: the temperature of the eutectic machine operating desk being fixed with the LED chip after die bond is heated to 300 DEG C gradually, and in temperature-rise period, design temperature is from 60 DEG C, rises gradually with the speed of 1.5 DEG C per second; Make the ultrasonic signal frequency sent to eutectic machine operating desk increase while heating up, in raising frequency process, setpoint frequency rises to 1500 hertz gradually from 0 hertz, and raising frequency process and temperature-rise period step are consistent;
(6) to lower the temperature frequency reducing: after sinking to contact with LED chip support closed seamless gap completely by LED chip on microscopic examination eutectic machine operating desk, adopt ion fan that eutectic machine operating desk temperature is declined gradually, make the ultrasonic signal frequency sent to eutectic machine operating desk decline gradually simultaneously, and cooling and frequency reducing process step are consistent, according to the temperature set in advance and ultrasonic frequency, automatically reset to initial point when arriving set point.
Described a kind of LED chip eutectic coheres technique, it is characterized in that: in step (2), eutectic glue is uniformly mixed is obtained by silver powder, tin grain, liquid rosin, and in eutectic glue, each composition weight is respectively:
Silver powder 38
Tin grain 52
Liquid rosin 10.
The present invention be easy to realize, processing ease, can guarantee heat radiation while seamless being fixed on LED chip support by LED chip securely, improve the heat transfer of LED chip, substantially increase the life-span of LED.And the requirement that LED chip assembles on a large scale can be met.
Accompanying drawing explanation
Fig. 1 is method flow diagram of the present invention.
Embodiment
As shown in Figure 1.A kind of LED chip eutectic coheres technique, adopts gluing mode to be cohered on LED chip support by LED chip, comprises the following steps:
(1) prepared by painting part: adopt supersonic wave cleaning machine, first in the container of supersonic wave cleaning machine, absolute ethyl alcohol is poured into, then will treat that the container that supersonic wave cleaning machine put into by the LED chip support of gluing cleans, after cleaning, LED chip support is put into drying box with the temperature of 100 DEG C drying process 1 hour;
(2) gluing: to the LED chip support uniform application eutectic glue after step (1) process;
(3) die bond: by sapphire structures being placed by the LED chip support after step (2) gluing and being coated with the LED chip of metal substrate;
(4) feed: be fixed on by the LED chip support after step (3) die bond on eutectic machine operating desk, and open temperature and ultrasonic sensing device knob;
(5) intensification raising frequency: the temperature of the eutectic machine operating desk being fixed with the LED chip after die bond is heated to 300 DEG C gradually, and in temperature-rise period, design temperature is from 60 DEG C, rises gradually with the speed of 1.5 DEG C per second; Make the ultrasonic signal frequency sent to eutectic machine operating desk increase while heating up, in raising frequency process, setpoint frequency rises to 1500 hertz gradually from 0 hertz, and raising frequency process and temperature-rise period step are consistent;
(6) to lower the temperature frequency reducing: after sinking to contact with LED chip support closed seamless gap completely by LED chip on microscopic examination eutectic machine operating desk, adopt ion fan that eutectic machine operating desk temperature is declined gradually, make the ultrasonic signal frequency sent to eutectic machine operating desk decline gradually simultaneously, and cooling and frequency reducing process step are consistent, according to the temperature set in advance and ultrasonic frequency, automatically reset to initial point when arriving set point.
In step (2), eutectic glue is uniformly mixed is obtained by silver powder, tin grain, liquid rosin, and in eutectic glue, each composition weight is respectively:
Silver powder 38
Tin grain 52
Liquid rosin 10.
Claims (1)
1. LED chip eutectic coheres a technique, adopts gluing mode to be cohered on LED chip support by LED chip, it is characterized in that: comprise the following steps:
(1) prepared by painting part: adopt supersonic wave cleaning machine, first in the container of supersonic wave cleaning machine, absolute ethyl alcohol is poured into, then will treat that the container that supersonic wave cleaning machine put into by the LED chip support of gluing cleans, after cleaning, LED chip support is put into drying box with the temperature of 100 DEG C drying process 1 hour;
(2) gluing: to the LED chip support uniform application eutectic glue after step (1) process;
(3) die bond: by sapphire structures being placed by the LED chip support after step (2) gluing and being coated with the LED chip of metal substrate;
(4) feed: be fixed on by the LED chip support after step (3) die bond on eutectic machine operating desk, and open temperature and ultrasonic sensing device knob;
(5) intensification raising frequency: the temperature of the eutectic machine operating desk being fixed with the LED chip after die bond is heated to 300 DEG C gradually, and in temperature-rise period, design temperature is from 60 DEG C, rises gradually with the speed of 1.5 DEG C per second; Make the ultrasonic signal frequency sent to eutectic machine operating desk increase while heating up, in raising frequency process, setpoint frequency rises to 1500 hertz gradually from 0 hertz, and raising frequency process and temperature-rise period step are consistent;
(6) to lower the temperature frequency reducing: after sinking to contact with LED chip support closed seamless gap completely by LED chip on microscopic examination eutectic machine operating desk, adopt ion fan that eutectic machine operating desk temperature is declined gradually, make the ultrasonic signal frequency sent to eutectic machine operating desk decline gradually simultaneously, and cooling and frequency reducing process step are consistent, according to the temperature set in advance and ultrasonic frequency, automatically reset to initial point when arriving set point;
In described step (2), eutectic glue is uniformly mixed is obtained by silver powder, tin grain, liquid rosin, and in eutectic glue, each composition weight is respectively:
Silver powder 38
Tin grain 52
Liquid rosin 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210308270.XA CN102832320B (en) | 2012-08-27 | 2012-08-27 | LED chip eutectic bonding process |
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| CN201210308270.XA CN102832320B (en) | 2012-08-27 | 2012-08-27 | LED chip eutectic bonding process |
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| CN102832320A CN102832320A (en) | 2012-12-19 |
| CN102832320B true CN102832320B (en) | 2015-01-28 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103280517B (en) * | 2013-06-05 | 2015-12-02 | 广州市鸿利光电股份有限公司 | A kind of LED eutectic technology method |
| CN105118910B (en) * | 2015-08-06 | 2019-02-19 | 鸿利智汇集团股份有限公司 | The preparation method of LED die-bonding method, crystal-bonding adhesive and crystal-bonding adhesive |
| CN108167674A (en) * | 2018-01-30 | 2018-06-15 | 中国科学院工程热物理研究所 | The filament lamp of micron LED chip |
| CN110931395A (en) * | 2019-12-06 | 2020-03-27 | 马鞍山三投光电科技有限公司 | Eutectic welding machine for die bonding of LED chip and working method of eutectic welding machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593283A (en) * | 2012-03-01 | 2012-07-18 | 溧阳通亿能源科技有限公司 | High light-efficiency LED (light-emitting diode) packaging preparation method |
| CN102601477A (en) * | 2012-02-29 | 2012-07-25 | 深圳市因沃客科技有限公司 | Microwelding eutectic method for LED chips |
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| US20070262341A1 (en) * | 2006-05-09 | 2007-11-15 | Wen-Huang Liu | Vertical led with eutectic layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102601477A (en) * | 2012-02-29 | 2012-07-25 | 深圳市因沃客科技有限公司 | Microwelding eutectic method for LED chips |
| CN102593283A (en) * | 2012-03-01 | 2012-07-18 | 溧阳通亿能源科技有限公司 | High light-efficiency LED (light-emitting diode) packaging preparation method |
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Effective date of registration: 20180214 Address after: 230000 Anhui city of Hefei province high tech Zone electromechanical Industrial Park Yang Lin Lu West C floor 4 Patentee after: Hefei inte energy saving Polytron Technologies Inc Address before: 230088 Anhui city of Hefei province high tech Zone electromechanical Industrial Park Road West Yang Patentee before: Hefei Yingte Electric Equipments Co., Ltd. |
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