CN103280517B - A kind of LED eutectic technology method - Google Patents
A kind of LED eutectic technology method Download PDFInfo
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- CN103280517B CN103280517B CN201310220853.1A CN201310220853A CN103280517B CN 103280517 B CN103280517 B CN 103280517B CN 201310220853 A CN201310220853 A CN 201310220853A CN 103280517 B CN103280517 B CN 103280517B
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Abstract
A kind of LED eutectic technology method, comprise the following steps: (1) material prepares, and mainly contains: 1. scaling powder prepares, 2. Glue dripping head prepares, 3. processing substrate; (2) on automatic die bond board, the important parameter of die bond is arranged; (3) automatic die bond; (4) material tests; (5) material is put into the first warm area of eutectic furnace, under the automatic propelling movement effect of push rod, material enters the second warm area, three-temperature-zone, four-temperature region, the 5th warm area, the 6th warm area and the 7th warm area successively and carries out eutectic; (6) material takes out at the 7th warm area, namely completes eutectic operation.By limiting parameter and standard, each technological parameter of adjustment and optimisation, the optimization process flow of each material and setting up relevant criterion of acceptability, qualification rate when carrying out LED batch eutectic can reach higher level.
Description
Technical field
The present invention relates to LED process, especially LED eutectic technology method.
Background technology
Eutectic solder technology has a wide range of applications in Electronic Packaging industry, as bonding, the shell sealing cap etc. of bonding, substrate and the shell of wafer and substrate; Compared with bonding with traditional epoxy conducting, eutectic solder technology has that thermal conductivity is high, thermal resistance is low, reliability is high and the advantage such as adhesive strength is large, is applicable to wafer and substrate in the device such as high frequency and semiconductor, substrate is mutually bonding with shell.
Along with the high speed development of LED technology, LED wafer encapsulation is more and more to high-power and integrated direction development, and LED wafer to welding process requirement far away higher than low-power LED wafer, traditional elargol technique for sticking has been difficult to the welding process requirement meeting LED wafer.Thus, increasing high-power LED encapsulation producer starts to attempt other more advanced welding procedures to realize the bonding of LED wafer and support, and wherein, eutectic solder technology is generally considered has good application prospect.
The quality of eutectic solder technology directly affects the quality of product, in the product that existing eutectic technology is formed, causes product fraction defective higher because voidage is large.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of LED eutectic technology method to improve the qualification rate of product.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of LED eutectic technology method, comprises the following steps:
(1) material prepares, and mainly contains: 1. scaling powder prepares; 2. Glue dripping head prepares; 3. processing substrate;
(2) on automatic die bond board, the important parameter of die bond is arranged: carry lacquer disk(-sc) scraper height≤1.5mm, Glue dripping head initial point is to grabbing the height distance of slurry position between 4500-5200 μm, Glue dripping head initial point to the height distance of stereoplasm position between 8500-9200 μm, suction nozzle initial point to the height distance of die bond position between 7500-8200 μm;
(3) automatic die bond;
(4) material tests;
(5) material is put into the first warm area of eutectic furnace, under the automatic propelling movement effect of push rod, material enters the second warm area, three-temperature-zone, four-temperature region, the 5th warm area, the 6th warm area and the 7th warm area successively and carries out eutectic: the temperature of the first warm area is set to 20-30 DEG C, set of time is 30-60S, and this warm area is that district put into by material; The temperature of the second warm area is set to 90-120 DEG C, and set of time is 30-60S, and this warm area is preheating zone, substrate, scaling powder and chip preheating; The temperature of three-temperature-zone is set to 160-240 DEG C, set of time is 30-60S, and in this warm area, scaling powder starts effect, the oxide layer of substrate surface and chip soldering junction is removed, the contact-making surface of chip soldering junction and substrate surface forms an oxygen barrier layer, and increases the wettability of substrate; The temperature of four-temperature region is set to 300-340 DEG C, set of time is 30-60S, in this warm area, temperature reaches peak value, temperature must to be ensured on substrate higher than 280 DEG C of times between 30S-60S, volatilized completely by composition volatilizable in scaling powder in this warm area, chip soldering junction and Eutectic Layer Au80Sn20 melt and form atoms permeating with substrate surface; The temperature of the 5th warm area is set to 150-210 DEG C, and set of time is 30-60S, and this warm area starts to be cooling area, by the golden tin layers cooling curing of fusing, makes to be formed between chip with substrate complicated metal level with what reach substrate and chip and welds object; The temperature of the 6th warm area is set to 20-30 DEG C, and set of time is 30-60S, and this warm area is cooling area, and the temperature of material is down near room temperature at this warm area; The temperature of the 7th warm area is set to 20-30 DEG C, and set of time is 30-60S, and this warm area is that material takes out district; The heating rate of heating zone controls within 0.5-6 DEG C/S, and the rate of temperature fall of cooling area controls within 1-10 DEG C/S; The N that each warm area passes into
2throughput controls as Eutectic Layer when>=20SCFH prevents eutectic with venting air is by secondary oxidation;
(6) material takes out after the 7th warm area cools completely, namely completes eutectic operation.
As improvement, in step (1), the requirement of scaling powder important parameter is: viscosity >=100KCPS, boiling point is between 180 DEG C-240 DEG C.
As improvement, in step (1), Glue dripping head adopts multi-point adhesive head, and Glue dripping head each point size and dimension is consistent, and each point top end face is in same level.
As improvement, in step (1), processing substrate operation is: 1. toast dehumidifying, and the temperature of baking is 100-150 DEG C, and the time is 3-7H; 2. water droplet angular measurement examination (ContactAngleTest), criterion of acceptability is water droplet angle≤60 °, if meet this standard, processing substrate is qualified, if do not meet, carry out successively the 3. step and the 2. walk until qualified; 3. plasma cleaning, the power of cleaning is 100-300W, and the time is 1-3mins.
As improvement, in step (2), described optimum configurations must meet glue amount standard: on substrate, the size of each point glue all can not be less than the size of respective point on Glue dripping head, and can not connect together completely between each point glue.
As improvement, in step (4), detect under comprising microscope and detect under X-RAY.
As improvement, in step (4), material first carries out outward appearance detection under the microscope: according to die bond technological specification, and defective products is chosen and done over again, and the carrying out that preliminary judgement chip offset amount is larger marks.
As improvement, in step (4), after material carries out microscopic examination, then detect under X-RAY.Its bad criterion is: square upwards, chip bottom just (is bearing) minimum range <0.25 substrate surface two electrode spacing (bad standard 1) doubly of electrode and negative (just) electrode of substrate surface to electrode water; In electrode normal direction, the chip electrode normal direction size (bad standard 2) of distance >=0.2 times of die bond point when chip geometric center and die bond programming; The material not meeting wherein any one standard is done over again, until qualified.
The beneficial effect that the present invention is compared with prior art brought is:
By limiting parameter and standard, each technological parameter of adjustment and optimisation, the optimization process flow of each material and setting up relevant criterion of acceptability, qualification rate when carrying out LED batch eutectic can reach higher level.
Accompanying drawing explanation
Fig. 1 is warm area temperature schematic diagram of the present invention.
Fig. 2 is Glue dripping head of the present invention arrangement schematic diagram.
Fig. 3 is present invention process flow chart.
Embodiment
Below in conjunction with Figure of description, the invention will be further described.
As shown in Figure 3, a kind of LED eutectic technology method, comprises the following steps:
(1) material prepares:
1. scaling powder prepares.Scaling powder important parameter requires viscosity >=100KCPS, and boiling point is between 180 DEG C-240 DEG C;
2. Glue dripping head prepares.Adopt multi-point adhesive head, Glue dripping head each point size and dimension is consistent, and each point top end face is in same level;
3. processing substrate.Processing substrate operation is: 1. toast dehumidifying, and the temperature of baking is 100-150 DEG C, and the time is 3-7H; 2. water droplet angular measurement examination (ContactAngleTest), criterion of acceptability is water droplet angle≤60 °, if meet this standard, processing substrate is qualified, if do not meet, carry out successively the 3. step and the 2. walk until qualified; 3. plasma cleaning, the power of cleaning is 100-300W, and the time is 1-3mins;
(2) on automatic die bond board, the important parameter of die bond is set: carry lacquer disk(-sc) scraper height≤1.5mm, Glue dripping head initial point is to grabbing the height distance of slurry position between 4500-5200 μm, Glue dripping head initial point to the height distance of stereoplasm position between 8500-9200 μm, suction nozzle initial point to the height distance of die bond position between 7500-8200 μm.Above-mentioned number arranges and need meet glue amount standard: on substrate, the size of each point glue all can not be less than the size of respective point on Glue dripping head, and can not connect together completely between each point glue;
(3) automatic die bond is carried out according to automatic die bond board job specification at automatic die bond board;
(4) material carries out outward appearance detection under the microscope: according to die bond technological specification, and defective products is chosen and done over again, and the carrying out that preliminary judgement chip offset amount is larger marks;
(5) after material carries out microscopic examination, detect under X-RAY again, its bad criterion is: square upwards, chip bottom just (is bearing) minimum range <0.25 substrate surface two electrode spacing (bad standard 1) doubly of electrode and negative (just) electrode of substrate surface to electrode water; In electrode normal direction, the chip electrode normal direction size (bad standard 2) of distance >=0.2 times of die bond point when chip geometric center and die bond programming; The material not meeting wherein any one standard is done over again, until qualified;
(6) material is put into the first warm area of eutectic furnace, under the automatic propelling movement effect of push rod, material enters the second warm area, three-temperature-zone, four-temperature region, the 5th warm area, the 6th warm area and the 7th warm area successively and carries out eutectic: the temperature of the first warm area is set to 20-30 DEG C, set of time is 30-60S, and this warm area is that district put into by material; The temperature of the second warm area is set to 90-120 DEG C, and set of time is 30-60S, and this warm area is preheating zone, substrate, scaling powder and chip preheating; The temperature of three-temperature-zone is set to 160-240 DEG C, set of time is 30-60S, and in this warm area, scaling powder starts effect, the oxide layer of substrate surface and chip soldering junction is removed, the contact-making surface of chip soldering junction and substrate surface forms an oxygen barrier layer, and increases the wettability of substrate; The temperature of four-temperature region is set to 300-340 DEG C, set of time is 30-60S, in this warm area, temperature reaches peak value, temperature must to be ensured on substrate higher than 280 DEG C of times between 30S-60S, volatilized completely by composition volatilizable in scaling powder in this warm area, chip soldering junction and Eutectic Layer Au80Sn20 melt and form atoms permeating with substrate surface; The temperature of the 5th warm area is set to 150-210 DEG C, and set of time is 30-60S, and this warm area starts to be cooling area, by the golden tin layers cooling curing of fusing, makes to be formed between chip with substrate complicated metal level with what reach substrate and chip and welds object; The temperature of the 6th warm area is set to 20-30 DEG C, and set of time is 30-60S, and this warm area is cooling area, and the temperature of material is down near room temperature at this warm area; The temperature of the 7th warm area is set to 20-30 DEG C, and set of time is 30-60S, and this warm area is that material takes out district; The heating rate of heating zone controls within 0.5-6 DEG C/S, and the rate of temperature fall of cooling area controls within 1-10 DEG C/S; The N that each warm area passes into
2throughput controls as Eutectic Layer when>=20SCFH prevents eutectic with venting air is by secondary oxidation;
(7) material takes out after the 7th warm area cools completely, namely completes eutectic operation.
Claims (7)
1. a LED eutectic technology method, is characterized in that, comprises the following steps:
(1) material prepares, and mainly contains: 1. scaling powder prepares; 2. Glue dripping head prepares; 3. processing substrate;
(2) important parameter of die bond is set on automatic die bond board: carry lacquer disk(-sc) scraper height≤1.5mm, Glue dripping head initial point is to grabbing the height distance of slurry position between 4500-5200 μm, Glue dripping head initial point to the height distance of stereoplasm position between 8500-9200 μm, suction nozzle initial point to the height distance of die bond position between 7500-8200 μm;
(3) automatic die bond is carried out according to automatic die bond board job specification at automatic die bond board;
(4) material tests;
(5) material is put into the first warm area of eutectic furnace, under the automatic propelling movement effect of push rod, material enters the second warm area, three-temperature-zone, four-temperature region, the 5th warm area, the 6th warm area and the 7th warm area successively and carries out eutectic: the temperature of the first warm area is set to 20-30 DEG C, set of time is 30-60S, and this warm area is that district put into by material; The temperature of the second warm area is set to 90-120 DEG C, and set of time is 30-60S, and this warm area is preheating zone, substrate, scaling powder and chip preheating; The temperature of three-temperature-zone is set to 160-240 DEG C, set of time is 30-60S, and in this warm area, scaling powder starts effect, the oxide layer of substrate surface and chip soldering junction is removed, the contact-making surface of chip soldering junction and substrate surface forms an oxygen barrier layer, and increases the wettability of substrate; The temperature of four-temperature region is set to 300-340 DEG C, set of time is 30-60S, in this warm area, temperature reaches peak value, temperature must to be ensured on substrate higher than 280 DEG C of times between 30S-60S, volatilized completely by composition volatilizable in scaling powder in this warm area, chip soldering junction and Eutectic Layer Au80Sn20 melt and form atoms permeating with substrate surface; The temperature of the 5th warm area is set to 150-210 DEG C, and set of time is 30-60S, and this warm area starts to be cooling area, by the Eutectic Layer Au80Sn20 cooling curing of fusing, makes to be formed between chip with substrate complicated metal level with what reach substrate and chip and welds object; The temperature of the 6th warm area is set to 20-30 DEG C, and set of time is 30-60S, and this warm area is cooling area, and the temperature of material is down near room temperature at this warm area; The temperature of the 7th warm area is set to 20-30 DEG C, and set of time is 30-60S, and this warm area is that material takes out district; The heating rate of heating zone controls within 0.5-6 DEG C/S, and the rate of temperature fall of cooling area controls within 1-10 DEG C/S; The N that each warm area passes into
2throughput controls as Eutectic Layer when>=20SCFH prevents eutectic with venting air is by secondary oxidation;
(6) material takes out after the 7th warm area cools completely, namely completes eutectic operation.
2. a kind of LED eutectic technology method according to claim 1, is characterized in that: in step (1), and the requirement of scaling powder important parameter is: viscosity >=100KCPS, boiling point is between 180 DEG C-240 DEG C.
3. a kind of LED eutectic technology method according to claim 1, is characterized in that: in step (1), and Glue dripping head adopts multi-point adhesive head, and Glue dripping head each point size and dimension is consistent, and each point top end face is in same level.
4. a kind of LED eutectic technology method according to claim 1, is characterized in that: in step (1), processing substrate operation is: 1. toast dehumidifying, and the temperature of baking is 100-150 DEG C, and the time is 3-7H; 2. water droplet angular measurement examination (ContactAngleTest), criterion of acceptability is water droplet angle≤60 °, if meet this standard, processing substrate is qualified, if do not meet, carry out successively the 3. step and the 2. walk until qualified; 3. plasma cleaning, the power of cleaning is 100-300W, and the time is 1-3mins.
5. a kind of LED eutectic technology method according to claim 1, it is characterized in that: in step (2), described optimum configurations must meet glue amount standard: on substrate, the size of each point glue all can not be less than the size of respective point on Glue dripping head, and can not connect together completely between each point glue.
6. a kind of LED eutectic technology method according to claim 1, is characterized in that: in described step (4), detects and detect under X-RAY under comprising microscope.
7. a kind of LED eutectic technology method according to claim 6, it is characterized in that: in described step (4), after material carries out microscopic examination, detect under X-RAY again, its bad criterion is: electrode water square upwards, minimum range <0.25 substrate surface two electrode spacing doubly of chip bottom positive electrode and substrate surface negative electrode, or the minimum range <0.25 of chip bottom negative electrode and substrate surface positive electrode substrate surface two electrode spacing doubly; In electrode normal direction, the chip electrode normal direction size of distance >=0.2 times of die bond point when chip geometric center and die bond programming; The material not meeting wherein any one standard is done over again, until qualified.
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| CN104518068B (en) * | 2014-11-14 | 2017-04-26 | 无锡悟莘科技有限公司 | Curing time sequence control system in LED encapsulation |
| CN107127412A (en) * | 2017-04-17 | 2017-09-05 | 安徽路明光电科技有限公司 | A kind of die bond welding procedure of LED filament |
| CN107316820A (en) * | 2017-06-22 | 2017-11-03 | 中科迪高微波系统有限公司 | A kind of process of microwave chip eutectic welding |
| CN108682644A (en) * | 2018-06-15 | 2018-10-19 | 佛山宝芯智能科技有限公司 | A kind of semiconductor prosthetic full-automatic assembly line work production method and system |
| CN109614675A (en) * | 2018-11-28 | 2019-04-12 | 江苏海德频率科技有限公司 | A kind of heating process for SMD2016 crystal resonator curing oven |
| CN111029455B (en) * | 2019-12-12 | 2020-10-23 | 罗海源 | Flip light bar die bonding and eutectic crystal all-in-one machine and flip light bar packaging process |
| CN111883631B (en) * | 2020-08-21 | 2021-08-31 | 连云港光鼎电子有限公司 | Preparation method of UVC-LED light-emitting device |
| CN116190281B (en) * | 2023-04-24 | 2023-07-28 | 金动力智能科技（深圳）有限公司 | Semiconductor die bonding process treatment transportation track |
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| EP1868241A1 (en) * | 2005-03-18 | 2007-12-19 | DOWA Electronics Materials Co., Ltd. | Submount and method for manufacturing same |
| CN101820045A (en) * | 2010-04-09 | 2010-09-01 | 江苏伯乐达光电科技有限公司 | LED packaging support, LED packaging method and LED manufactured by utilizing same |
| CN102832320A (en) * | 2012-08-27 | 2012-12-19 | 合肥英特电力设备有限公司 | LED chip eutectic bonding process |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1868241A1 (en) * | 2005-03-18 | 2007-12-19 | DOWA Electronics Materials Co., Ltd. | Submount and method for manufacturing same |
| CN101820045A (en) * | 2010-04-09 | 2010-09-01 | 江苏伯乐达光电科技有限公司 | LED packaging support, LED packaging method and LED manufactured by utilizing same |
| CN102832320A (en) * | 2012-08-27 | 2012-12-19 | 合肥英特电力设备有限公司 | LED chip eutectic bonding process |
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Address after: 510890 Huadu District, Guangdong, Guangzhou Flower Town, SAST Road, No. 1, No. 1 Patentee after: Hongli Newell group Limited by Share Ltd Address before: The East Town Airport high-tech industrial base in Guangdong Province, Guangzhou City, Huadu District 510890 Valley Road Patentee before: Guangzhou Hongli Tronic Co., Ltd. |