CN102832311A - Light emitting diode structure - Google Patents
Light emitting diode structure Download PDFInfo
- Publication number
- CN102832311A CN102832311A CN2011101959977A CN201110195997A CN102832311A CN 102832311 A CN102832311 A CN 102832311A CN 2011101959977 A CN2011101959977 A CN 2011101959977A CN 201110195997 A CN201110195997 A CN 201110195997A CN 102832311 A CN102832311 A CN 102832311A
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- China
- Prior art keywords
- electrode
- light emitting
- semiconductor layer
- emitting diode
- type doping
- Prior art date
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Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 238000010276 construction Methods 0.000 claims description 42
- 239000013078 crystal Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- -1 ITZO) Chemical compound 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
A light emitting diode structure comprises a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, a first electrode and a second electrode. The light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The first electrode is configured on the first type doped semiconductor layer and comprises a plurality of branch parts. The second electrode is configured on the second type doped semiconductor layer, the second electrode encloses at least one closed area, and the closed area is positioned between the two adjacent branch parts.
Description
Technical field
The present invention relates to a kind of photoelectric cell structure, relate in particular to a kind of light emitting diode construction.
Background technology
(light emitting diode, LED) structure has advantages such as low power consumption, environmental protection, long service life and reaction rate be fast, therefore has been widely used in lighting field and the demonstration field because light-emitting diode.In order to promote the brightness of light-emitting diode, large-sized chip is developed gradually.Yet the electrode design of existing light emitting diode construction has the shortcoming that causes the electric current dispersiveness not good, and makes this electrode design not be suitable for large-sized chip.
For improving the above-mentioned not good problem of electric current dispersiveness, another kind of existing electrode is developed.The existing electrode of this kind comprises and is disposed at the first fourchette shape electrode on the N type doping semiconductor layer and is disposed at the second fourchette shape electrode on the P type doping semiconductor layer.The first fourchette shape electrode and the second fourchette shape electrode have a plurality of first branching portions and a plurality of second branching portion respectively, only dispose one second branching portion in the middle of two the first wherein adjacent branching portions.Though this electrode design can be improved the not good problem of electric current dispersiveness; But under this electrode design; Because electronics is different with the mobility (mobility) in electric hole; The mobility in the more electric hole of mobility of electronics is fast, and therefore when electron transport to the second branching portion that first branching portion sends when being passed to first branching portion (or the second branching portion electric hole of sending), the electron concentration and the electric hole concentration difference of second branching portion other (or by first branching portion) are very big; And make electronics and electric hole compound (recombination) probability lower, and then make that the luminous efficiency of light emitting diode construction with the existing electrode of this kind is not good.
Summary of the invention
The present invention provides a kind of light emitting diode construction, and it has high-luminous-efficiency.
One embodiment of the invention propose a kind of light emitting diode construction, comprise the first type doping semiconductor layer, the second type doping semiconductor layer, luminescent layer, first electrode and second electrode.Luminescent layer is disposed between the first type doping semiconductor layer and the second type doping semiconductor layer.First electrode is disposed on the first type doping semiconductor layer, and comprises a plurality of branching portions.Second electrode is disposed on the second type doping semiconductor layer, and second electrode economizer crosses at least one closed area, and the closed area is between two adjacent branching portions.
Based on above-mentioned; The light emitting diode construction of embodiments of the invention goes out second electrode of closed area by configuration corral between adjacent two branching portions of first electrode; Electronics and electric hole concentration on can making in the light emitting diode construction are comparatively mated; This can effectively promote the compound of electronics and electric hole, and then improves the luminous efficiency of light emitting diode construction.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs. elaborates as follows.
Description of drawings
Fig. 1 is for looking sketch map on the light emitting diode construction of one embodiment of the invention.
Fig. 2 is the profile shown in the A-A ' line of corresponding diagram 1.
Fig. 3 is the profile shown in the B-B ' line of corresponding diagram 1.
The light emitting diode construction that Fig. 4 illustrates one embodiment of the invention is bonded on the situation on the circuit board.
Fig. 5 is for looking sketch map on the light emitting diode construction of another embodiment of the present invention.
Reference numeral:
100,100 ': light emitting diode construction
102: the first type doping semiconductor layers
102a: platform part
102b: depression
104: the second type doping semiconductor layers
106: luminescent layer
108,108 ': the first electrode
108a, 108e, 110d: branching portion
108b: first connection pad
108c: the opening of first electrode
108d, 110c: linkage section
110: the second electrodes
110a, 110a ': extension
110b: second connection pad
112: transparency conducting layer
200: conductive projection
300: circuit board
C: closed area
D1, D2: thickness
H1: beeline
H2: Breadth Maximum
T1, T2: end points
Embodiment
Fig. 1 is for looking sketch map on the light emitting diode construction of one embodiment of the invention.Fig. 2 is the profile shown in the A-A ' line of corresponding diagram 1.Fig. 3 is the profile shown in the B-B ' line of corresponding diagram 1.
Please be simultaneously with reference to Fig. 1, Fig. 2 and Fig. 3, the light emitting diode construction 100 of present embodiment comprises the first type doping semiconductor layer 102, the second type doping semiconductor layer 104, luminescent layer 106, first electrode 108 and second electrode 110.Luminescent layer 106 is disposed between the first type doping semiconductor layer 102 and the second type doping semiconductor layer 104.First electrode 108 is disposed on the first type doping semiconductor layer 102, and second electrode 110 is disposed on the second type doping semiconductor layer 104.In the present embodiment, the first type doping semiconductor layer 102 is a n type semiconductor layer for example, and the second type doping semiconductor layer 104 for example is a p type semiconductor layer.Luminescent layer 106 for example be gallium nitride (gallium nitride, GaN) layer with InGaN (indium gallium nitride, InGaN) layer alternated multiple quantum trap structure (Multiple Quantum Well, MQW).Yet in other embodiments, luminescent layer 106 can also be a quantum well structure.The material of first electrode 108 and second electrode 110 is an electric conducting material, and with simple layer or multilayer conductive material stacks, it comprises the combination of gold, titanium, aluminium, chromium, platinum, other electric conducting materials or these materials.But the present invention is not exceeded with above-mentioned.
In more detail, the first type doping semiconductor layer 102 of present embodiment has platform part 102a and the depression 102b that is connected, and the thickness D1 of platform part 102a is greater than the thickness D2 of depression 102b.On luminescent layer 106 and the second type doping semiconductor layer, 104 102a of configuration platform portion, and first electrode 108 is disposed on the depression 102b.In one embodiment, light emitting diode construction 100 modes of covering crystalline substance (flip chip) capable of using encapsulate.As shown in Figure 4, present embodiment conductive projection 200 joint (bonding) first electrodes 108 capable of using are with circuit board 300 and engage second electrode 110 and circuit board 300.Thus, the user just can be through the light emitting diode construction 100 of circuit board 300 operation present embodiments.Yet; In another embodiment; The mode that light emitting diode construction 100 also can adopt routing to combine encapsulates; That is wire bonds capable of using engages first electrode 108 and circuit board 300 and engages second electrode 110 and circuit board 300, and this moment first electrode 108 and second electrode 110 back to circuit board 300.
In addition, the light emitting diode construction 100 of present embodiment can further comprise transparency conducting layer 112.Transparency conducting layer 112 is configurable between second electrode 110 and the second type doping semiconductor layer 104.The second type doping semiconductor layer 104 can form good Ohmic contact (ohmic contact) by the transparency conducting layer 112 and second electrode 110.The material of transparency conducting layer 112 for example is indium tin oxide (indium tin oxide; ITO), indium-zinc oxide (indium zinc oxide; IZO), zinc oxide (zinc oxide, ZnO), indium tin zinc oxide (indium tin zinc oxide, ITZO), aluminium tin-oxide (aluminum tin oxide; ATO), the aluminium zinc oxide (aluminumzinc oxide, AZO) or other suitable electrically conducting transparent materials.
In the present embodiment, closed area C is between two adjacent branching portion 108a.In the present embodiment, the beeline H1 between each the branching portion 108a and adjacent second electrode 110 is less than or equal to the Breadth Maximum H2 of closed area C, but the invention is not restricted to this, and distance H 1 is adjusted with the design requirement of all visual enforcement of distance H 2.The Breadth Maximum H2 here is meant in each different direction, gets the maximum direction of width of a closed area C, and is Breadth Maximum H2 at the width of the closed area C that this side up.
Above-mentioned electrode design (being that closed area C is between two adjacent branching portion 108a) can be improved in the prior art because of the not good problem of the different luminous efficiencies that cause with hole mobility (mobility) of electronics.Specify as follows: because the more electric hole of mobility of electronics is fast, so electronics still can kept higher concentration away from branching portion 108a place.So when electronics moved to closed area C, the concentration of electronics and the concentration in electric hole can be comparatively approaching, so just can make electronics and electric hole that preferable recombination rate is arranged, and then promote the luminous efficiency of light emitting diode construction 100.
In the present embodiment; Because the beeline H1 between each the branching portion 108a and adjacent second electrode 110 is less than or equal to the Breadth Maximum H2 of closed area C; Therefore the electron concentration among the C of closed area just can effectively promote; And the concentration in the concentration of the electronics that makes and electric hole is more approaching, and then promotes the luminous efficiency of light emitting diode construction 100 by the recombination rate that promotes electronics and electric hole.
With regard to the closed area C of the light emitting diode construction 100 of present embodiment, the distance of closed area C and branching portion 108a is far away, thus the electron transport of sending by branching portion 108a to the closed area during C, electron concentration descends.On the other hand; Though the close together of the closed area C and second electrode 110; But because the mobility (mobility) in electric hole is little than electronics, so when the electric hole of being sent by second electrode 110 was passed to closed area C, electric hole concentration had dropped to the degree approaching with electron concentration.Thus; Electric hole concentration among the C of closed area just can be mated with the electron concentration among the C of closed area; And then make electronics electricity hole in the C of closed area and near the probability of generation compound (recombination) significantly improve; And further promote the luminous efficiency of light emitting diode construction 100, and also can promote the uniformity of luminance of light emitting diode construction 100.
Please continue with reference to Fig. 1, Fig. 3 and Fig. 4, first electrode 108 of present embodiment can further comprise at least one first connection pad 108b, and the first connection pad 108b connects branching portion 108a.Second electrode 110 of present embodiment can further comprise at least one second connection pad 110b and the extension 110a that is connected with the second connection pad 110b.In the present embodiment, the second connection pad 110b and extension 110a corral go out closed area C.In addition, in the present embodiment, the second connection pad 110b is disposed between the two adjacent branching portion 108a of first electrode 108.As shown in Figure 4, the first connection pad 108b can be connected with circuit board 300 through conductive projection 200 with the second connection pad 110b, and then lets the user can pass through circuit board 300 operating light-emitting diodes (leds) structures 100.
In detail, the branching portion 108a of present embodiment has the first relative end T1 and the second end T 2, and the first connection pad 108b connects the first end T1 of the contiguous branch 108a of portion.In the present embodiment, two branching portion 108a in first electrode 108 are the U font, and second electrode 110 in the form of a ring.And the opening 108c of the U font of first electrode 108 is towards the second connection pad 110b of second electrode 110.
Fig. 5 is for looking sketch map on the light emitting diode construction of another embodiment of the present invention.Please with reference to Fig. 5, the light emitting diode construction 100 ' of present embodiment is similar with the light emitting diode construction 100 of Fig. 1, and both difference is described below.In the present embodiment; First electrode 108 ' comprises a plurality of first connection pad 108b; And first electrode 108 ' also comprises at least one linkage section 108d and a plurality of branching portion 108e; Its middle connecting segment 108d connects adjacent 2 first connection pad 108b, and these branching portions 108e is then extended by these first connection pads 108b respectively.In addition, in the present embodiment, second electrode 110 ' comprises a plurality of second connection pad 110b, extension 110a ', a plurality of linkage section 110c and a plurality of branching portion 110d.Extension 110a ' for example in the form of a ring, linkage section 110c connects the extension 110a ' and the second connection pad 110b, and these second connection pads 110b extends branching portion 110d respectively.In the present embodiment, branching portion 110d is disposed between branching portion 108e and the branching portion 108a.Perhaps, in another embodiment, but branching portion 110d and branching portion 108e alternate configurations.In the present embodiment,, therefore also have the effect of the light emitting diode construction 100 that is similar to Fig. 1, no longer repeat at this because extension 110a ' in the form of a ring and corral goes out closed area C.
In sum; Light emitting diode construction of the present invention goes out second electrode of closed area by configuration corral between adjacent two branching portions of first electrode; And make the electronics electricity hole concentration on each zone of light emitting diode construction mate; This can effectively promote the compound of electronics and electric hole, and then improves the compound probability in electronics electricity hole.Thus, the luminous efficiency light extraction efficiency of light emitting diode construction of the present invention just can effectively improve.
Though the present invention discloses as above with embodiment, so it is not in order to limiting the present invention, any under the those of ordinary skill of technical field, when can doing a little change and retouching, and do not break away from the spirit and scope of the present invention.
Claims (9)
1. a light emitting diode construction is characterized in that, comprising:
The first type doping semiconductor layer;
The second type doping semiconductor layer;
Luminescent layer is disposed between said first type doping semiconductor layer and the said second type doping semiconductor layer;
First electrode is disposed on the said first type doping semiconductor layer, and comprises a plurality of branching portions; And
Second electrode is disposed on the said second type doping semiconductor layer, and wherein said second electrode economizer crosses at least one closed area, and said closed area is between two adjacent said branching portions.
2. light emitting diode construction according to claim 1 is characterized in that, the said first type doping semiconductor layer is a n type semiconductor layer, and the said second type doping semiconductor layer is a p type semiconductor layer.
3. light emitting diode construction according to claim 1; It is characterized in that; The said first type doping semiconductor layer has platform part and the depression that is connected; The thickness of said platform part is greater than the thickness of said depression, and said luminescent layer and the said second type doping semiconductor layer are disposed on the said platform part, and said first electrode is disposed on the said depression.
4. light emitting diode construction according to claim 1; It is characterized in that; Said first electrode also comprises at least one first connection pad, and said first connection pad connects said branching portion, and said second electrode also comprises at least one second connection pad and the extension that is connected with said second connection pad.
5. light emitting diode construction according to claim 4 is characterized in that, said second connection pad is disposed between the two adjacent said branching portions of said first electrode.
6. light emitting diode construction according to claim 4; It is characterized in that; Two said branching portions in said first electrode are the U font, and said second electrode in the form of a ring, and the opening of the said U font of said first electrode is towards said second connection pad of said second electrode.
7. light emitting diode construction according to claim 1 is characterized in that said light emitting diode construction is used to cover the encapsulation of crystal type.
8. light emitting diode construction according to claim 1 is characterized in that, also comprises transparency conducting layer, is disposed between said second electrode and the said second type doping semiconductor layer.
9. light emitting diode construction according to claim 1 is characterized in that, the beeline between each said branching portion and adjacent said second electrode is less than or equal to the Breadth Maximum of said closed area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510521919.XA CN105140369B (en) | 2011-06-13 | 2011-07-13 | Light emitting diode structure |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100120568A TWI511332B (en) | 2011-06-13 | 2011-06-13 | Light emitting diode structure |
| TW100120568 | 2011-06-13 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510521919.XA Division CN105140369B (en) | 2011-06-13 | 2011-07-13 | Light emitting diode structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102832311A true CN102832311A (en) | 2012-12-19 |
| CN102832311B CN102832311B (en) | 2015-09-23 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110195997.7A Expired - Fee Related CN102832311B (en) | 2011-06-13 | 2011-07-13 | Light emitting diode structure |
| CN201510521919.XA Expired - Fee Related CN105140369B (en) | 2011-06-13 | 2011-07-13 | Light emitting diode structure |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201510521919.XA Expired - Fee Related CN105140369B (en) | 2011-06-13 | 2011-07-13 | Light emitting diode structure |
Country Status (2)
| Country | Link |
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| CN (2) | CN102832311B (en) |
| TW (1) | TWI511332B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111373551A (en) * | 2019-12-05 | 2020-07-03 | 重庆康佳光电技术研究院有限公司 | Micro device and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1703784A (en) * | 2002-10-03 | 2005-11-30 | 日亚化学工业株式会社 | Light emitting diode |
| US20070085089A1 (en) * | 2005-10-13 | 2007-04-19 | Advanced Optoelectronic Technology Inc. | High power light emitting diode |
| CN101320771A (en) * | 2007-06-04 | 2008-12-10 | 富士迈半导体精密工业（上海）有限公司 | Semiconductor luminous element |
| KR20100125797A (en) * | 2009-05-21 | 2010-12-01 | 삼성엘이디 주식회사 | Nitride semiconductor light emitting device |
| CN102024891A (en) * | 2009-09-18 | 2011-04-20 | 丰田合成株式会社 | Light-emitting element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007123517A (en) * | 2005-10-27 | 2007-05-17 | Toshiba Corp | Semiconductor light-emitting element, and semiconductor light-emitting apparatus |
| KR100930195B1 (en) * | 2007-12-20 | 2009-12-07 | 삼성전기주식회사 | Nitride Semiconductor Light Emitting Diode with Electrode Pattern |
| TWI491074B (en) * | 2008-10-01 | 2015-07-01 | Formosa Epitaxy Inc | Nitride-based semiconductor light-emitting element |
| CN101630712A (en) * | 2009-08-07 | 2010-01-20 | 中山大学 | LED electrode structure |
| KR101039931B1 (en) * | 2009-10-21 | 2011-06-09 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
| CN201812849U (en) * | 2010-09-03 | 2011-04-27 | 湘能华磊光电股份有限公司 | Electrode structure of light-emitting diode (LED) chip and LED chip structure containing same |
-
2011
- 2011-06-13 TW TW100120568A patent/TWI511332B/en not_active IP Right Cessation
- 2011-07-13 CN CN201110195997.7A patent/CN102832311B/en not_active Expired - Fee Related
- 2011-07-13 CN CN201510521919.XA patent/CN105140369B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1703784A (en) * | 2002-10-03 | 2005-11-30 | 日亚化学工业株式会社 | Light emitting diode |
| US20070085089A1 (en) * | 2005-10-13 | 2007-04-19 | Advanced Optoelectronic Technology Inc. | High power light emitting diode |
| CN101320771A (en) * | 2007-06-04 | 2008-12-10 | 富士迈半导体精密工业（上海）有限公司 | Semiconductor luminous element |
| KR20100125797A (en) * | 2009-05-21 | 2010-12-01 | 삼성엘이디 주식회사 | Nitride semiconductor light emitting device |
| CN102024891A (en) * | 2009-09-18 | 2011-04-20 | 丰田合成株式会社 | Light-emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105140369B (en) | 2019-07-02 |
| TW201251116A (en) | 2012-12-16 |
| CN102832311B (en) | 2015-09-23 |
| CN105140369A (en) | 2015-12-09 |
| TWI511332B (en) | 2015-12-01 |
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