201251116 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種光電元件結構，且特別是有關於 一種發光二極體結構。 【先前技術】 由於發光二極體(light emitting diode, LED)結構具有 低功率消耗、環保、使用壽命長及反應速率快等優勢，因 此已被廣泛地應用在照明領域及顯示領域中。為了提升發 光二極體的亮度’大尺寸的晶粒逐漸被開發出來。然而， 習知的發光二極體結構的電極設計具有造成電流分散性不 佳的缺點’而使得此電極設計不適合用於大尺寸的晶粒。 為改善上述之電流分散性不佳的問題，另一種習知電 極被發展出來。此種習知電極包括配置於N型摻雜半導體 層上的第一指又狀電極以及配置於P型摻雜半導體層上的 第一，又，電極。第—指叉狀電極與第二指叉狀電極分別 三、有艾固第刀支部與多個第二分支部，其中相鄰之二個 ίάτ 間僅配置有一個第二分支部。雖,然此電極設 計電流分散性不佳的問題，但在此電極設計下，由 =二、虽二ί'同之遷移率(m〇biiity)不同，電子的遷移率較電 分支部時（1、笛 部發出之電子傳遞至第二 择），第·乂+弟一分支部發出之電洞傳遞至第一分支部 1差異^⑼絲—分支科)㈣子濃度與電洞濃 而使電子與電洞復合(recombinati〇n)機率較 201251116 使得具有此㈣知電極之發光二極體結構的發光 【發明内容】 率 本發明提供_種發光二極義構，以有高發光效 本發明之一實施例提出一種發光二極 -型摻雜半導體層、第二型_半導體層、1第 J極，電極。發光層配置於第一型穆雜 雜半導體層之間。第—電極配置於第—型換^ 導體層上，且包括多個分支部。第二電極配 ’ 且封閉 雜半導體層上，第二電極圈圍出至少—封第一型捧 區域位於相鄰之二分支部之間。 °°5 ’ 基於上述，本發明之實施例之發光二極體社错茲士 A 電極的相鄰二分支部之間配置_出在 匹配，此可有效促進電子與電_復合，進j^為 極體結構的發光效率。 進而k尚發光二 為讓本發明之上述特徵和優點能更明顯易 牛貫施例，並配合所附圖式作詳細說明如 懂，下文特 下 【實施方式】201251116 VI. Description of the Invention: [Technical Field] The present invention relates to a photovoltaic element structure, and more particularly to a light-emitting diode structure. [Prior Art] Since the light emitting diode (LED) structure has advantages of low power consumption, environmental protection, long service life, and fast response rate, it has been widely used in the field of illumination and display. In order to increase the brightness of the light-emitting diodes, large-sized crystal grains have been gradually developed. However, the electrode design of the conventional light-emitting diode structure has a drawback of causing poor current dispersion, which makes this electrode design unsuitable for use in large-sized crystal grains. In order to improve the above problem of poor current dispersion, another conventional electrode has been developed. Such a conventional electrode includes a first finger-shaped electrode disposed on the N-type doped semiconductor layer and a first and further electrode disposed on the P-type doped semiconductor layer. The first finger electrode and the second finger electrode respectively have three Aigu knife branches and a plurality of second branch portions, wherein only one second branch portion is disposed between the adjacent two electrodes. Although the electrode design has poor current dispersion, in this electrode design, when the mobility is lower than the mobility (m〇biiity), the electron mobility is lower than that of the electrical branch ( 1. The electrons emitted by the flute are transmitted to the second choice), and the hole issued by the branch of the first 弟+ brother is transmitted to the first branch 1 difference ^(9) silk-branch branch) (4) the sub-concentration and the hole are thickened The electron-and-hole recombination ratio is higher than that of 201251116, so that the light-emitting diode structure having the (four) known electrode is illuminated. [Inventive content] The present invention provides a light-emitting diode structure for high luminous efficiency. One embodiment proposes a light-emitting diode-type doped semiconductor layer, a second-type semiconductor layer, a first J-pole, and an electrode. The light emitting layer is disposed between the first type of impurity semiconductor layers. The first electrode is disposed on the first-type conductor layer and includes a plurality of branches. The second electrode is disposed on the closed semiconductor layer, and the second electrode ring encloses at least the first type of the region between the adjacent two branches. °°5′ Based on the above, the arrangement between the adjacent two branches of the LEDs of the LEDs of the embodiment of the present invention is matched, which can effectively promote the combination of electrons and electricity. The luminous efficiency of the polar body structure. Further, the above-mentioned features and advantages of the present invention can be more clearly described in the following description, and will be described in detail in conjunction with the drawings.
圖1為本發明一實施例之發A 圖。II 7么科處® 1 > Λ 吉構的上視不意 M圖2為對應圖1之A-A，線所繪之却 曰面圖。圖3為對應 4 201251116 圖1之B-B’線所繪之剖面圖。 請同時參照圖1、圖2及圖3，本實施例之發光二極 體結構100包括第一型摻雜半導體層102、第二型摻雜半 導體層104、發光層106、第一電極1〇8以及第二電極11〇。 發光層106配置於第一型摻雜半導體層1〇2與第二型摻雜 半導體層104之間。第一電極1〇8配置於第一型摻雜半導 體層102上，而第一電極ho配置於第二型摻雜半導體層 104上。在本實施例中，第一型掺雜半導體層1〇2例如為 N型半導體層，而第二型掺雜1〇4半導體層例如為p型半 導體層。發光層106例如為氮化鎵(galliumnitride, GaN)層 與氮化銦鎵(indium gallium nitride，InGaN)層交替堆疊的多 重量子井結構(Multiple Quantum Well，MQW)。然而，在 其他實施例中，發光層106亦可以是量子井結構。第一電 極108與第二電極11〇之材質為導電材料，以單一層或是 多層導電材料堆疊’其包括金、鈦、鋁、鉻、鉑、其他導 電材料或這些材料的組合。但本發明不以上述為限。 更詳細地說，本實施例之第一型摻雜半導體層1〇2具 有相連接之平台部102a與下陷部i〇2b，平台部102a的厚 度D1大於下陷部l〇2b的厚度D2。發光層1〇6與第二型 摻雜半導體層104配置平台部i〇2a上，且第一電極1〇8 配置於下陷部102b上。在一實施例中，發光二極體結構 1〇〇可利用覆晶(flip chip)的方式來封襞。如圖4所示，本 貫施例可利用導電凸塊200接合(bonding)第一電極1〇8與 電路板300及接合第二電極11〇與電路板3〇〇。如此一來， 201251116 使用者便可透過電路板300操作本實施例之發光二極體結 構100。然而’在另一實施例中，發光二極體結構1〇〇亦 可採用打線結合的方式來封裝，亦即可利用接合導線來接 合第一電極108與電路板300及接合第二電極110與電路 板300 ’而此時第一電極1〇8與第二電極no背對電路板 300。 此外，本實施例之發光二極體結構100可進一步包括 透明導電層112。透明導電層112可配置於第二電極11〇 與第一型摻雜半導體層104之間。第二型摻雜半導體層1〇4 可藉由透明導電層112與第二電極11〇形成良好之歐姆接 觸(ohmic contact)。透明導電層112的材質例如為銦錫氧化 物(indium tin oxide，ITO) ' 銦辞氧化物(indiumzinc〇xide， IZO)、氧化鋅(zinc oxide，Zn0)、銦錫鋅氧化物__此 zinc oxide，ITZO)、鋁錫氧化物（alumimjm 仳 oxide, ATO)、鋁鋅氧化物(aluminum zinc⑽丨和，Az〇)或其他適當 的透明導電材質。 本實施例之第-電極108包括多個分支部論，而本 實施例之第二電極11G關出至少—封雖域c (圖）是 以-個封閉區域C為例）。舉例而言，如圖i所示，本實 施例之第-電極⑽包括二個分支部驗。（圖i中是以 二個分支部1關，但本發明之發光三極體結構並不限 於圖1中續，在其他實施财，亦可以是第—電極1〇8 包括三個以上的分支部l〇8a)。 在本實施例中，封閉區域C位於相鄰之二個分支部 6 201251116 108a之間。在本實施例中，每一分支部1〇8a與相鄰之第 二電極110之間的最短距離H1小於或等於封閉區域C的 最大寬度H2，但本發明不限於此，距離H1與距離H2皆 可視實施的設計需求而調整。此處的最大寬度H2是指在 各個不同的方向中，取一個封閉區域c的嘗 向，而在此方向上之封閉區域c的寬度即為最=寬度H2。 上述之電極設計（即封閉區域c位於相鄰之二個分支 部108a之間）可改善習知技術中因電子與電洞遷移率 (mobility)不同而造成之發光效率不佳㈣題。詳細說明如 下：由於電子的遷移率較電減，因此電子在遠離分支部 108a處仍可轉較高的濃度。所以，# f子移動至封閉區 域C時’電子的濃度與電洞的濃度會較為接近，如此便能 夠使電子與電洞純佳的復合率’進而提升發光二極體結 構100的發光效率。 在本實施例中，由於每一分支部108a盘 電極m之_最短距離m小於或等於賴區域c的最 大寬度H2 ’因此封閉區域C中的電子濃度便能夠有效提 升，而使的電子的濃度與電_漢度更為接近，進而藉由 提升電子與電洞的復合率來提升發光二極體結構⑽的發 光效率。 二就本實施例之發光二極體結構觸的封閉區域c而 言’封閉區域C與分支部108a的距離較遠，故由分支部 驗發出的f子傳遞至朗區域c時，電子濃度已下降。 另-方面’雖然封_域c與第二電極則的距離較近， 201251116 但由於電洞之遷移率(mobility)較電子小，故由第二電極 Π0發出之電洞傳遞至封閉區域C時，電洞濃度已下降至 與電子濃度接近的程度。如此一來，封閉區域C中的電洞 浪度便可與封閉區域C中的電子濃度匹配，進而使得電子 電/同在封閉區域C中及附近發生復合(recombination)的機 率大巾备提高，而更進一步地提升發光二極體結構1〇〇的發 光效率’且亦能夠提升發光二極體結構1〇〇的發光均勻性。 請繼續參照圖1、圖3及圖4，本實施例之第一電極 108可進一步包括至少一第一接墊108b，第一接墊108b 連接分支部l〇8a。本實施例之第二電極no可進一步包括 至少一第二接墊ll〇b及與第二接墊11(^連接之一延伸部 ll〇a。在本實施例中，第二接墊11〇b與延伸部11〇a圈圍 出封閉區域C。此外’在本實施例中，第二接墊1 i〇b配置 於第一電極108之相鄰的二分支部i〇8a之間。如圖4所 示，第一接墊108b與第二接墊ll〇b可透過導電凸塊200 與電路板300連接，進而讓使用者可透過電路板3〇〇操作 發光二極體結構100。 詳言之’本實施例之分支部108a具有相對的第一端 T1與第二端T2，且第一接墊l〇8b連接相鄰分支部l〇8a 的第一端τι。在本實施例中，第一電極108中之二第一分 支108a呈U字形，且第二電極11〇呈環狀。並且，第— 電極108之U字形的開口 108c朝向第二電極丨1〇的第二 接塾11 Ob。 圖5為本發明另一實施例之發光二極體結構的上視示 8 201251116 思圖。請參照圖5 ’本實施例之發光二極體結構1〇〇，與圖 1之發光二極體結構1〇〇類似，而兩者的差異如下所述。 在本實施例中，第一電極108，包括多個第一接墊108b， 且第一電極108’更包括至少一連接段1〇8d及多個分支部 108e，其中連接段l〇8d連接相鄰二第一接墊丨，而這 些分支部108e則分別由這些第一接墊1〇8b延伸而出。此 外，在本實施例中，第二電極11〇’包括多個第二接墊 110b、延伸部ll〇a’ 、多個連接段i10c及多個分支部 110d。延伸部ii〇a’例如呈環狀，連接段u〇c連接延伸 部110a與第二接墊i10b，且這些第二接墊n〇b分別延 伸出分支部ll〇d。在本實施例中’分支部11〇d配置於分 支。P 108e與为支部i〇8a之間。或者，在另一實施例中， 分支部110d與分支部108e可交替配置。在本實施例中， 由於延伸部110a’ i環狀而圈圍出封閉區域c，因此亦具 有類似於圖1之發光二極體結構⑽的功效，在此不再重 所述，本發明之發光二極體結構藉由在第一電極 的相鄰二分支部之間配置圈圍出封閉區域的第二電極，而 f寻發光二極體結構各區域上的f子電洞濃度匹配，此可 ^促進電子與電洞的復合，進而提高電子電洞復合之機 —來’本發明之發光二極體結構的發光效率光提 取效率便可有效提高。 ，然本發明已以實施例揭露如上，然其並非用以限定 柄明’任何所屬技術領域中具有通常知識者，在不脫離 201251116 本發明之精神和範圍内，當可作些許之更動與潤錦，故本 發明之保護範圍當視後附之申請專利範圍所界定者為準。 圖式簡單說明】 圖 圖1為本發明一實施例之發光二極體結構的上視示音 圖2為對應圖i之A-A’線所繪之剖面圖 圖3為對應圖1之B-B’線所繪之剖面圖 圖4示出本發明一實施例之發光二極 路板上的情形。 冑、、、。構接合在電 意圖 圖5為本發明另一實施例之發光二極 。 耀、、去構的上視示 【主要元件符號說明】 100、100’ ：發光二極體結構 102 :第一型摻雜半導體層 102a :平台部 102b :下陷部 104 :第二型摻雜半導體層 106 :發光層 108、108’ ：第一電極 108a、108e、110d :分支部 108b :第一接墊 108c :第一電極之的開口 201251116 108d、110c :連接段 110 :第二電極 110a、110a’ ：延伸部 110b :第二接墊 112 :透明導電層 200 :導電凸塊 300 :電路板 C:封閉區域 Dl、D2 :厚度 H1 :最短距離 H2 :最大寬度 ΤΙ、T2 :端點 111 is a diagram A of an embodiment of the present invention. II 7Ministry Division® 1 > Λ GI GIFT OBJECTS Figure 2 is the A-A corresponding to Figure 1, and the line is drawn. Figure 3 is a cross-sectional view taken along line B-B' of Figure 1 of 201251116. Referring to FIG. 1 , FIG. 2 and FIG. 3 , the LED structure 100 of the present embodiment includes a first type doped semiconductor layer 102 , a second type doped semiconductor layer 104 , a light emitting layer 106 , and a first electrode 1 . 8 and the second electrode 11〇. The light emitting layer 106 is disposed between the first type doped semiconductor layer 1〇2 and the second type doped semiconductor layer 104. The first electrode 1〇8 is disposed on the first type doped semiconductor layer 102, and the first electrode ho is disposed on the second type doped semiconductor layer 104. In the present embodiment, the first type doped semiconductor layer 1 2 is, for example, an N type semiconductor layer, and the second type doped 1 〇 4 semiconductor layer is, for example, a p type semiconductor layer. The light-emitting layer 106 is, for example, a multi-quantum well structure (MQW) in which gallium nitride (GaN) layers and indium gallium nitride (InGaN) layers are alternately stacked. However, in other embodiments, the luminescent layer 106 can also be a quantum well structure. The first electrode 108 and the second electrode 11 are made of a conductive material and are stacked in a single layer or a plurality of layers of conductive material, which comprises gold, titanium, aluminum, chromium, platinum, other conductive materials or a combination of these materials. However, the invention is not limited to the above. In more detail, the first type doped semiconductor layer 1〇2 of the present embodiment has the connected land portion 102a and the depressed portion i2b, and the thickness D1 of the land portion 102a is larger than the thickness D2 of the depressed portion 102b. The light-emitting layer 1〇6 and the second-type doped semiconductor layer 104 are disposed on the land portion i〇2a, and the first electrode 1〇8 is disposed on the depressed portion 102b. In one embodiment, the light emitting diode structure can be sealed by a flip chip. As shown in Fig. 4, the present embodiment can bond the first electrode 1'8 with the circuit board 300 and the second electrode 11'' and the circuit board 3' with the conductive bumps 200. In this way, the user can use the circuit board 300 to operate the LED structure 100 of the embodiment. However, in another embodiment, the LED structure 1 can also be packaged by wire bonding, that is, the bonding wires can be used to bond the first electrode 108 and the circuit board 300 and the second electrode 110. The circuit board 300' is at this time the first electrode 1〇8 and the second electrode no are facing away from the circuit board 300. In addition, the LED structure 100 of the present embodiment may further include a transparent conductive layer 112. The transparent conductive layer 112 may be disposed between the second electrode 11 〇 and the first type doped semiconductor layer 104. The second type doped semiconductor layer 1?4 can form a good ohmic contact with the second electrode 11? by the transparent conductive layer 112. The material of the transparent conductive layer 112 is, for example, indium tin oxide (ITO) 'indiumzinc〇xide (IZO), zinc oxide (Zn0), indium tin zinc oxide__this zinc Oxide, ITZO), aluminum oxide (alumimjm 仳oxide, ATO), aluminum zinc oxide (aluminum zinc (10) 丨 and Az 〇) or other suitable transparent conductive material. The first electrode 108 of the present embodiment includes a plurality of branch portions, and the second electrode 11G of the present embodiment is turned off at least - although the domain c (Fig.) is taken as an enclosed region C). For example, as shown in Figure i, the first electrode (10) of the present embodiment includes two branch portions. (In Fig. i, the two branch portions 1 are closed, but the structure of the light-emitting diode of the present invention is not limited to that in Fig. 1. In other implementations, the first electrode 1〇8 may include three or more points. Branch l〇8a). In the present embodiment, the closed area C is located between the adjacent two branch portions 6 201251116 108a. In this embodiment, the shortest distance H1 between each branch portion 1 8a and the adjacent second electrode 110 is less than or equal to the maximum width H2 of the closed region C, but the present invention is not limited thereto, and the distance H1 and the distance H2 are not limited thereto. They can all be adjusted according to the design requirements of the implementation. The maximum width H2 herein refers to the taste of a closed region c in each of the different directions, and the width of the closed region c in this direction is the most = width H2. The electrode design described above (i.e., the closed region c is located between the adjacent two branch portions 108a) can improve the luminous efficiency (four) caused by the difference in electron and hole mobility in the prior art. The details are as follows: Since the mobility of electrons is less electric, the electrons can still be rotated to a higher concentration away from the branch portion 108a. Therefore, when the #f sub is moved to the closed region C, the concentration of electrons and the concentration of the holes are relatively close, so that the electron recombination ratio of the electrons and the holes can be improved, thereby improving the luminous efficiency of the light-emitting diode structure 100. In the present embodiment, since the shortest distance m of the disk electrode m of each branch portion 108a is less than or equal to the maximum width H2' of the lamella region c, the electron concentration in the closed region C can be effectively increased, and the concentration of the electrons is increased. It is closer to the electric enthalpy, and the luminous efficiency of the light-emitting diode structure (10) is improved by increasing the recombination ratio of electrons and holes. 2. In the closed region c of the light-emitting diode structure of the present embodiment, the distance between the closed region C and the branch portion 108a is long, so that the electron concentration has decreased when the f-subject detected by the branch portion is transmitted to the long region c. . On the other hand, although the distance between the seal _ field c and the second electrode is relatively close, 201251116, since the mobility of the hole is smaller than that of the electron, the hole emitted by the second electrode Π0 is transmitted to the closed region C. The hole concentration has dropped to a level close to the electron concentration. In this way, the hole wave degree in the closed region C can be matched with the electron concentration in the closed region C, thereby increasing the probability that the electronic power/combination in the closed region C and the vicinity is recombination. Furthermore, the luminous efficiency of the light-emitting diode structure is further improved, and the uniformity of light emission of the light-emitting diode structure can also be improved. Referring to FIG. 1 , FIG. 3 and FIG. 4 , the first electrode 108 of the embodiment may further include at least one first pad 108 b , and the first pad 108 b is connected to the branch portion 10 8 a. The second electrode no of the embodiment may further include at least one second pad 11b and a second pad 11 connected to the extension portion 11a. In this embodiment, the second pad 11〇 b and the extension 11 〇 a circle enclose the closed area C. In addition, in the present embodiment, the second pad 1 i 〇 b is disposed between the adjacent two branches i 〇 8a of the first electrode 108. As shown in FIG. 4, the first pad 108b and the second pad 11b can be connected to the circuit board 300 through the conductive bump 200, thereby allowing the user to operate the LED structure 100 through the circuit board 3. The branch portion 108a of the present embodiment has opposite first ends T1 and second ends T2, and the first pads 10b are connected to the first ends τ1 of the adjacent branch portions 108a. In this embodiment, The first branch 108a of the first electrode 108 has a U-shape, and the second electrode 11 is annular, and the U-shaped opening 108c of the first electrode 108 faces the second port 11 of the second electrode 丨1〇. Figure 5 is a top view of a structure of a light-emitting diode according to another embodiment of the present invention. Figure 8 is a schematic view of the light-emitting diode of the present embodiment. 1 is similar to the light-emitting diode structure 1 of FIG. 1, and the difference between the two is as follows. In this embodiment, the first electrode 108 includes a plurality of first pads 108b, and The first electrode 108' further includes at least one connecting portion 1〇8d and a plurality of branch portions 108e, wherein the connecting portion 10b is connected to the adjacent two first pads, and the branch portions 108e are respectively formed by the first pads 1 Further, in the present embodiment, the second electrode 11'' includes a plurality of second pads 110b, an extension portion 〇a', a plurality of connection segments i10c, and a plurality of branch portions 110d. Ii〇a' is, for example, annular, the connecting section u〇c is connected to the extending portion 110a and the second pad i10b, and the second pads n〇b respectively extend out of the branching portion 11〇d. In this embodiment The branch portion 11〇d is disposed at the branch. P 108e is between the branch portion i〇8a. Alternatively, in another embodiment, the branch portion 110d and the branch portion 108e may be alternately arranged. In the present embodiment, the extension portion 110a' i is annular and encloses the enclosed area c, thus also having the effect similar to the light-emitting diode structure (10) of FIG. The light-emitting diode structure of the present invention is configured by enclosing a second electrode of the enclosed region between adjacent two branch portions of the first electrode, and f is found on each region of the light-emitting diode structure. The concentration of f sub-holes is matched, which can promote the recombination of electrons and holes, thereby improving the electron-hole compounding machine--the luminous efficiency of the luminous efficiency of the light-emitting diode structure of the invention can be effectively improved. The present invention has been disclosed in the above embodiments, but it is not intended to limit the scope of the invention, and it is possible to make some changes and simplifications without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a top view of a light-emitting diode structure according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along line A-A' of FIG. Cross-sectional view drawn by the line 'B' Figure 4 shows the situation on the light-emitting diode board of an embodiment of the present invention. helmet,,,. CONNECTION IN ELECTRICAL INTEGRATION Figure 5 is a light emitting diode according to another embodiment of the present invention. [1] The main component symbol description 100, 100': Light-emitting diode structure 102: First-type doped semiconductor layer 102a: Platform portion 102b: Sag portion 104: Second-type doped semiconductor Layer 106: light-emitting layer 108, 108': first electrode 108a, 108e, 110d: branch portion 108b: first pad 108c: opening of the first electrode 201251116 108d, 110c: connection segment 110: second electrode 110a, 110a ': extension portion 110b: second pad 112: transparent conductive layer 200: conductive bump 300: circuit board C: closed region D1, D2: thickness H1: shortest distance H2: maximum width ΤΙ, T2: end point 11