CN102820245A - Thin-film process system with wafer storage groove and wafer accessing method thereof - Google Patents
Thin-film process system with wafer storage groove and wafer accessing method thereof Download PDFInfo
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- CN102820245A CN102820245A CN2012102926725A CN201210292672A CN102820245A CN 102820245 A CN102820245 A CN 102820245A CN 2012102926725 A CN2012102926725 A CN 2012102926725A CN 201210292672 A CN201210292672 A CN 201210292672A CN 102820245 A CN102820245 A CN 102820245A
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Abstract
The invention relates to a thin-film process system with a wafer storage groove. The system comprises a wafer storage unit, a wafer transfer cavity, a vacuum wafer conveying cavity, a process cavity and a vacuum wafer storage cavity arranged between the wafer conveying cavity and the vacuum conveying cavity connected in sequence successively. The vacuum wafer storage cavity further comprises a pumping unit communicated with the vacuum wafer storage cavity. The pumping unit is used to provide a vacuum atmosphere or an air atmosphere for the vacuum wafer storage cavity. The wafer storage groove is moveably arranged in the vacuum wafer storage cavity. According to the thin-film process system with the wafer storage groove provided by the invention, the vacuum wafer storage cavity with the moveably arranged wafer storage groove is additionally arranged so that not only the waiting time of risk of processed wafers is effectively reduced, but also mutual influence between wafers after thin-film process and wafers to be processed is avoided, and potential risks are avoided and the performance and quality of products are improved.
Description
Technical field
The present invention relates to technical field of semiconductor device, relate in particular to a kind of thin-film technique system and access sheet method thereof of depositing film trap that have.
Background technology
Along with the development of semiconductor device technology and dimension shrinks in proportion, technological process complexity and production difficulty all constantly increase, and be also increasingly high to the requirement of production environment simultaneously.Production environment comprises two aspects: one of which, the clean room environment that semiconductor device is produced; Its two, the local environment that the semiconductor device production equipment is inner.The good and bad performance and the quality that directly influences semiconductor product of said two aspect environment.
See also Fig. 5, shown in Figure 5 is the plan structure sketch map of the dry etching equipment of thin-film technique system in the prior art.The working method of said dry etching equipment 2 may further comprise the steps: the first, the said wafer (not shown) of technology of treating is transferred to from said wafer case 21 in the said wafer handling chamber 22 that is under the atmospheric atmosphere; The second, treat that via said wafer transmission chamber 22 process wafer is sent to the said vacuum that is in vacuum environment and send sheet chamber 23; Three, send sheet chamber 23 to be sent to processing chamber 24 thin-film technique of being correlated with via said vacuum; Four, after said thin-film technique finishes, said wafer send sheet chamber 23, said wafer transmission chamber 22 to be back to said wafer case 21 through said vacuum more successively; Five, after the said wafer of treating technology is accomplished said thin-film technique through said processing chamber 24 and after all being back to said wafer case 21, said wafer case 21 just with said wafer handling to subsequent processing, circulation successively.
Significantly; The overlong time of waiting in the wafer case 21 of said wafer under being in atmospheric atmosphere; And be easy to combine and adsorb the stronger material of some activity with airborne steam; The residual chemical reagent volatilization of said wafer self after perhaps handling through thin-film technique causes the mutual pollution between wafer, forms defective.
Enumerating ground, is example with the grid polycrystalline silicon etching technics, and etching gas commonly used in its explained hereafter comprises hydrogen bromide (HBr), and said hydrogen bromide etching gas very easily condenses.Hydrogen bromide etching gas through meeting residual minim on the wafer behind the said etching technics.Said residual hydrogen bromide etching gas just can volatilize and condense on the wafer of treating technology, forms defective, and its performance is brought negative effect.
Etching with low dielectric constant films is an example again, and in the common process, it is longer to treat that from said first process wafer begins to treat that to said last a slice process wafer technology finishes the spent process time.Correspondingly, said wafer after treatment is also longer in the time of staying of the said wafer case 21 that is arranged in atmospheric atmosphere.Yet, in the process of said long-time stop, said low dielectric constant films very easily with atmosphere in steam combine, and other stronger composition of adsorption activity reduces its performance.
So to the problem that prior art exists, this case designer relies on the industry experience for many years of being engaged in, the active research improvement is so there be a kind of thin-film technique system and access sheet method thereof of depositing film trap that have of inventing.
Summary of the invention
The present invention be directed in the prior art; The overlong time of waiting in the wafer case of wafer under being in atmospheric atmosphere described in traditional thin-film technique system; And be easy to combine and adsorb the stronger material of some activity with airborne steam; The residual chemical reagent volatilization of said wafer self after perhaps handling through thin-film technique causes the defectives such as mutual pollution between wafer, and a kind of thin-film technique system that deposits film trap that has is provided.
Another purpose of the present invention is in the prior art; The overlong time of waiting in the wafer case of wafer under being in atmospheric atmosphere described in traditional thin-film technique system; And be easy to combine and adsorb the stronger material of some activity with airborne steam; The residual chemical reagent volatilization of said wafer self after perhaps handling through thin-film technique causes the defectives such as mutual pollution between wafer, and a kind of access sheet method with the thin-film technique system that deposits film trap is provided.
In order to address the above problem; The present invention provides a kind of thin-film technique system that deposits film trap that has; Said have a thin-film technique system that deposits film trap; Comprise that the wafer memory cell, wafer handling cavity, the vacuum that are linked in sequence successively send sheet chamber, process cavity, and be arranged on said wafer transmission cavity and said vacuum send the vacuum between the sheet chamber to deposit the sheet chamber; The wafer memory cell, said wafer memory cell is used to store the said wafer of treating technology; Vacuum is deposited the sheet chamber, and said vacuum is deposited the sheet chamber and is used to store the wafer that has passed through thin-film technique; The wafer transmission cavity; Said atmosphere conveyer is set in the said wafer transmission cavity; Said atmosphere conveyer is used for the said process wafer of treating and between said wafer memory cell and said wafer transmission cavity, transmits, and said having deposited between the sheet chamber in said wafer memory cell and said vacuum through the wafer of thin-film technique transmitted; Vacuum is sent the sheet chamber; Said vacuum is sent said void apparatus further is set in the sheet chamber; Said void apparatus is used for the said process wafer of treating and between said wafer handling chamber and said process cavity, transmits, and said having deposited between the sheet chamber in said process cavity and said vacuum through the wafer of thin-film technique transmitted; Vacuum is deposited the sheet chamber; Said vacuum is deposited the sheet chamber and is further comprised having and deposit the pump that the sheet chamber is communicated with said vacuum and take out the unit; Said pump is taken out the unit and is used to said vacuum and deposits the sheet chamber vacuum or atmospheric atmosphere are provided, and activity is provided with the said film trap of depositing in said vacuum is deposited the sheet chamber.
Optional, said atmosphere conveyer is that atmosphere transmits arm; Said void apparatus is that atmosphere transmits arm.
Optional, said pump is taken out the unit, and to deposit in said vacuum that the sheet chamber is in when depositing the sheet state be that said vacuum is deposited the sheet chamber vacuum is provided; Said pump is taken out the unit, and to deposit in said vacuum that the sheet chamber is in when getting the sheet state be that said vacuum is deposited the sheet chamber atmospheric atmosphere is provided.
Optional, the said film trap of depositing is movably arranged on said vacuum and deposits in the sheet chamber, and can deposit the sheet chamber with respect to said vacuum and move up and down.
Optional, the said film trap of depositing holds 25 wafers that passed through thin-film technique.
Optional, saidly treat that the thin-film technique of process wafer is thin film deposition, film etching technics.
For realizing another purpose of the present invention, the present invention provides a kind of access sheet method with the thin-film technique system that deposits film trap, and said technological process may further comprise the steps:
Execution in step S1: under the effect of said atmosphere conveyer, the said wafer of technology of treating is transferred to from said wafer memory cell in the said wafer handling cavity that is under the atmospheric atmosphere;
Execution in step S2: under the effect of said void apparatus, send the sheet chamber to be sent to process cavity from said wafer transmission cavity via said vacuum the said wafer of technology of treating;
Execution in step S3: the said wafer of technology of treating is accomplished said thin-film technique in said process cavity;
Execution in step S4: after said thin-film technique finishes; The wafer of the said thin-film technique of process send the sheet chamber to be sent to said vacuum via said vacuum under the effect of said void apparatus and deposits in the sheet chamber, and the wafer of the said thin-film technique of process is stored in and is positioned at the film trap of depositing that said vacuum is deposited the sheet chamber;
Execution in step S5: after the said wafer of treating technology is accomplished said thin-film technique through said process cavity and all be stored in said vacuum deposit in the sheet chamber deposit film trap after; Deposit the pump that the sheet chamber is communicated with said vacuum and take out unit starting and return-air; After treating that said vacuum is deposited sheet chamber recurrence atmospheric atmosphere; The said wafer that has passed through thin-film technique is deposited the sheet chamber from said vacuum and is sent to said wafer memory cell under the effect of said atmosphere conveyer.
Optional, the said film trap of depositing is movably arranged on said vacuum and deposits in the sheet chamber, and can deposit the sheet chamber with respect to said vacuum and move up and down.
Optional, said thin-film technique is thin film deposition, film etching technics.
Optional, said stored number of depositing film trap is regulated according to actual needs.
In sum; According to the invention have the thin-film technique system that deposits film trap and have the movable vacuum of depositing film trap that is provided with through increase and deposit the sheet chamber and not only effectively reduce the waiting time that there is risk in process wafer; And avoid passing through the wafer of thin-film technique and treating influencing each other between the process wafer; And evaded potential risk, improved properties of product and quality.
Description of drawings
The plan structure sketch map that has the thin-film technique system that deposits film trap for the present invention shown in Figure 1;
The side-looking structural representation that film trap is positioned at the upper end of depositing that has the thin-film technique system that deposits film trap for the present invention shown in Figure 2;
The side-looking structural representation that film trap is positioned at the lower end of depositing that has the thin-film technique system that deposits film trap for the present invention shown in Figure 3;
Fig. 4 deposits the process chart of access sheet method of the thin-film technique system of film trap for the present invention has;
Shown in Figure 5 is the plan structure sketch map of the dry etching equipment of thin-film technique system in the prior art.
Embodiment
By the technology contents, the structural feature that specify the invention, reached purpose and effect, will combine embodiment and conjunction with figs. to specify below.
See also Fig. 1, Fig. 2, Fig. 3, the plan structure sketch map that has the thin-film technique system that deposits film trap for the present invention shown in Figure 1.The side-looking structural representation that film trap is positioned at the upper end of depositing that has the thin-film technique system that deposits film trap for the present invention shown in Figure 2.The side-looking structural representation that film trap is positioned at the lower end of depositing that has the thin-film technique system that deposits film trap for the present invention shown in Figure 3.Said have the thin-film technique system 1 that deposits film trap and comprise that the wafer memory cell 11, wafer handling cavity 12, the vacuum that are linked in sequence successively send sheet chamber 13, process cavity 14, and be arranged on said wafer transmission cavity 12 and said vacuum send the vacuum between the sheet chamber 13 to deposit sheet chamber 15.
Wherein, said wafer memory cell 11 is used to store the said wafer 111 of treating technology.Said vacuum is deposited sheet chamber 15 and is used to store the wafer 112 that has passed through thin-film technique.Said atmosphere conveyer 121 is set in the said wafer transmission cavity 12; Said atmosphere conveyer 121 is used for the said process wafer 111 of treating and between said wafer memory cell 11 and said wafer transmission cavity 12, transmits, and the wafer 112 of the said thin-film technique of process is deposited transmission between the sheet chamber 15 in said wafer memory cell 11 and said vacuum.Said vacuum send sheet chamber 13 to be arranged between said wafer handling cavity 12 and the said process cavity 14, and is used for said vacuum degree transition with the thin-film technique system 1 that deposits film trap.Said vacuum is sent said void apparatus 131 further is set in the sheet chamber 13; Said void apparatus 131 is used for the said process wafer 111 of treating and between said wafer handling chamber 12 and said process cavity 14, transmits, and the wafer 112 of the said thin-film technique of process is deposited transmission between the sheet chamber 15 in said process cavity 14 and said vacuum.Said vacuum is deposited sheet chamber 15 and is further comprised having and deposit the pump that sheet chamber 15 is communicated with said vacuum and take out unit 151; Said pump is taken out unit 151 and is used to said vacuum and deposits sheet chamber 15 vacuum or atmospheric atmosphere are provided; And activity is provided with the said film trap 152 of depositing in said vacuum is deposited sheet chamber 15, and the said film trap 152 of depositing is used to store the said wafer 112 that has passed through thin-film technique.
In the present invention, preferably, said atmosphere conveyer 121 transmits arm for atmosphere.Said void apparatus 131 transmits arm for atmosphere.Said pump is taken out unit 151, and to deposit in said vacuum that sheet chamber 15 is in when depositing the sheet state be that said vacuum is deposited sheet chamber 15 vacuum is provided; Said pump is taken out unit 151, and to deposit in said vacuum that sheet chamber 15 is in when getting the sheet state be that said vacuum is deposited sheet chamber 15 atmospheric atmosphere is provided.The said film trap 152 of depositing is movably arranged on said vacuum and deposits in the sheet chamber 15, and can deposit sheet chamber 15 with respect to said vacuum and move up and down, and the said film trap 152 of depositing can hold 25 wafers 112 that passed through thin-film technique.The said thin-film technique of process wafer 111 of treating includes but not limited to technologies such as thin film deposition, film etching.
See also Fig. 4, Fig. 4 deposits the process chart of access sheet method of the thin-film technique system of film trap for the present invention has.Said technological process with access sheet method of the thin-film technique system that deposits film trap may further comprise the steps:
Execution in step S1: under the effect of said atmosphere conveyer 121, the said wafer 111 of technology of treating is transferred to from said wafer memory cell 11 in the said wafer handling cavity 12 that is under the atmospheric atmosphere;
Execution in step S2: under the effect of said void apparatus 131, send sheet chamber 13 to be sent to process cavity 14 from said wafer transmission cavity 12 via said vacuum the said wafer 111 of technology of treating;
Execution in step S3: the said wafer 111 of technology of treating is accomplished said thin-film technique in said process cavity 14;
Execution in step S4: after said thin-film technique finishes; Saidly under the effect of said void apparatus 131, send sheet chamber 13 to be sent to said vacuum through the wafer 112 of thin-film technique to deposit in the sheet chamber 15 via said vacuum, said through the wafer 121 of thin-film technique be stored in be positioned at that said vacuum deposits sheet chamber 13 deposit film trap 131;
Execution in step S5: after the said wafer of treating technology 111 is accomplished said thin-film technique through said process cavity 14 and all be stored in said vacuum deposit in the sheet chamber 15 deposit film trap 152 after; Depositing pump that sheet chamber 15 is communicated with said vacuum takes out unit 151 and starts and return-airs; After treating that said vacuum is deposited sheet chamber 15 recurrence atmospheric atmosphere; The said wafer 112 that has passed through thin-film technique is deposited sheet chamber 15 from said vacuum and is sent to said wafer memory cell 11 under the effect of said atmosphere conveyer 121.
Please continue to consult Fig. 2, Fig. 3; And Fig. 1 is consulted in combination; In the present invention; Through 112 storages of the wafer after the thin-film technique, the said vacuum that is positioned at is deposited depositing film trap 152 and can depositing sheet chamber 15 with respect to said vacuum and move up and down of sheet chamber 15 for the ease of said, and the said film trap 152 of depositing can hold 25 wafers 112 that passed through thin-film technique.Said thin-film technique includes but not limited to technologies such as thin film deposition, film etching.Significantly, said stored number of depositing film trap 152 can be regulated according to actual needs.Deposit film trap 152 described in the present invention and hold 25 and be merely through the wafer 112 of thin-film technique and enumerate, should not be regarded as restriction technical scheme of the present invention.
In sum; According to the invention have the thin-film technique system that deposits film trap and have the movable vacuum of depositing film trap that is provided with through increase and deposit the sheet chamber and not only effectively reduce the waiting time that there is risk in process wafer; And avoid passing through the wafer of thin-film technique and treating influencing each other between the process wafer; And evaded potential risk, improved properties of product and quality.
Those skilled in the art all should be appreciated that, under the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and modification to the present invention.Thereby, if when any modification or modification fall in the protection range of appended claims and equivalent, think that the present invention contains these modifications and modification.
Claims (10)
1. one kind has the thin-film technique system that deposits film trap; It is characterized in that; Said have the thin-film technique system that deposits film trap and comprise that the wafer memory cell, wafer handling cavity, the vacuum that are linked in sequence successively send sheet chamber, process cavity, and be arranged on said wafer transmission cavity and said vacuum send the vacuum between the sheet chamber to deposit the sheet chamber;
The wafer memory cell, said wafer memory cell is used to store the said wafer of treating technology;
Vacuum is deposited the sheet chamber, and said vacuum is deposited the sheet chamber and is used to store the wafer that has passed through thin-film technique;
The wafer transmission cavity; Said atmosphere conveyer is set in the said wafer transmission cavity; Said atmosphere conveyer is used for the said process wafer of treating and between said wafer memory cell and said wafer transmission cavity, transmits, and said having deposited between the sheet chamber in said wafer memory cell and said vacuum through the wafer of thin-film technique transmitted;
Vacuum is sent the sheet chamber; Said vacuum is sent said void apparatus further is set in the sheet chamber; Said void apparatus is used for the said process wafer of treating and between said wafer handling chamber and said process cavity, transmits, and said having deposited between the sheet chamber in said process cavity and said vacuum through the wafer of thin-film technique transmitted;
Vacuum is deposited the sheet chamber; Said vacuum is deposited the sheet chamber and is further comprised having and deposit the pump that the sheet chamber is communicated with said vacuum and take out the unit; Said pump is taken out the unit and is used to said vacuum and deposits the sheet chamber vacuum or atmospheric atmosphere are provided, and activity is provided with the said film trap of depositing in said vacuum is deposited the sheet chamber.
2. as claimed in claim 1 have a thin-film technique system that deposits film trap, it is characterized in that, said atmosphere conveyer is that atmosphere transmits arm; Said void apparatus is that atmosphere transmits arm.
3. as claimed in claim 1 have a thin-film technique system that deposits film trap, it is characterized in that, said pump is taken out the unit, and to deposit in said vacuum that the sheet chamber is in when depositing the sheet state be that said vacuum is deposited the sheet chamber vacuum is provided; Said pump is taken out the unit, and to deposit in said vacuum that the sheet chamber is in when getting the sheet state be that said vacuum is deposited the sheet chamber atmospheric atmosphere is provided.
4. as claimed in claim 1 have a thin-film technique system that deposits film trap, it is characterized in that, the said film trap of depositing is movably arranged on said vacuum and deposits in the sheet chamber, and can deposit the sheet chamber with respect to said vacuum and move up and down.
5. as claimed in claim 1 have a thin-film technique system that deposits film trap, it is characterized in that the said film trap of depositing holds 25 wafers that passed through thin-film technique.
6. as claimed in claim 1 have a thin-film technique system that deposits film trap, it is characterized in that, saidly treats that the thin-film technique of process wafer is thin film deposition, film etching technics.
7. the access sheet method with the thin-film technique system that deposits film trap as claimed in claim 1 is characterized in that said technological process may further comprise the steps:
Execution in step S1: under the effect of said atmosphere conveyer, the said wafer of technology of treating is transferred to from said wafer memory cell in the said wafer handling cavity that is under the atmospheric atmosphere;
Execution in step S2: under the effect of said void apparatus, send the sheet chamber to be sent to process cavity from said wafer transmission cavity via said vacuum the said wafer of technology of treating;
Execution in step S3: the said wafer of technology of treating is accomplished said thin-film technique in said process cavity;
Execution in step S4: after said thin-film technique finishes; The wafer of the said thin-film technique of process send the sheet chamber to be sent to said vacuum via said vacuum under the effect of said void apparatus and deposits in the sheet chamber, and the wafer of the said thin-film technique of process is stored in and is positioned at the film trap of depositing that said vacuum is deposited the sheet chamber;
Execution in step S5: after the said wafer of treating technology is accomplished said thin-film technique through said process cavity and all be stored in said vacuum deposit in the sheet chamber deposit film trap after; Deposit the pump that the sheet chamber is communicated with said vacuum and take out unit starting and return-air; After treating that said vacuum is deposited sheet chamber recurrence atmospheric atmosphere; The said wafer that has passed through thin-film technique is deposited the sheet chamber from said vacuum and is sent to said wafer memory cell under the effect of said atmosphere conveyer.
8. the access sheet method with the thin-film technique system that deposits film trap as claimed in claim 7 is characterized in that, the said film trap of depositing is movably arranged on said vacuum and deposits in the sheet chamber, and can deposit the sheet chamber with respect to said vacuum and move up and down.
9. the access sheet method with the thin-film technique system that deposits film trap as claimed in claim 7 is characterized in that said thin-film technique is thin film deposition, film etching technics.
10. the access sheet method with the thin-film technique system that deposits film trap as claimed in claim 7 is characterized in that said stored number of depositing film trap is regulated according to actual needs.
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| CN201210292672.5A CN102820245B (en) | 2012-08-16 | 2012-08-16 | Thin-film process system with wafer storage groove and wafer accessing method thereof |
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| WO2015058471A1 (en) * | 2013-10-23 | 2015-04-30 | 深圳市华星光电技术有限公司 | Method and apparatus for controlling incoming/outgoing wafers of cooling buffer mechanism in fine length measuring instrument |
| CN109143786A (en) * | 2018-09-25 | 2019-01-04 | 西安微电子技术研究所 | A method of reducing deep-submicron photoetching process spherical defect |
| CN111107324A (en) * | 2019-12-31 | 2020-05-05 | 上海陛通半导体能源科技股份有限公司 | Monitoring device and monitoring method of wafer transmission system |
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