CN102819197B - 成像光学系统、投射曝光设备、微结构部件及其产生方法 - Google Patents

成像光学系统、投射曝光设备、微结构部件及其产生方法 Download PDF

Info

Publication number
CN102819197B
CN102819197B CN201210297391.9A CN201210297391A CN102819197B CN 102819197 B CN102819197 B CN 102819197B CN 201210297391 A CN201210297391 A CN 201210297391A CN 102819197 B CN102819197 B CN 102819197B
Authority
CN
China
Prior art keywords
optical system
imaging optical
mirror
image plane
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210297391.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN102819197A (zh
Inventor
汉斯-于尔根.曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of CN102819197A publication Critical patent/CN102819197A/zh
Application granted granted Critical
Publication of CN102819197B publication Critical patent/CN102819197B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0652—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201210297391.9A 2007-10-26 2008-10-02 成像光学系统、投射曝光设备、微结构部件及其产生方法 Active CN102819197B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US98278507P 2007-10-26 2007-10-26
DE102007051670.5 2007-10-26
DE102007051670 2007-10-26
US60/982,785 2007-10-26
CN2008801133751A CN101836164B (zh) 2007-10-26 2008-10-02 成像光学系统和具有该类型的成像光学系统的微光刻投射曝光设备

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2008801133751A Division CN101836164B (zh) 2007-10-26 2008-10-02 成像光学系统和具有该类型的成像光学系统的微光刻投射曝光设备

Publications (2)

Publication Number Publication Date
CN102819197A CN102819197A (zh) 2012-12-12
CN102819197B true CN102819197B (zh) 2016-06-22

Family

ID=40490434

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201210297391.9A Active CN102819197B (zh) 2007-10-26 2008-10-02 成像光学系统、投射曝光设备、微结构部件及其产生方法
CN2008801133751A Active CN101836164B (zh) 2007-10-26 2008-10-02 成像光学系统和具有该类型的成像光学系统的微光刻投射曝光设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2008801133751A Active CN101836164B (zh) 2007-10-26 2008-10-02 成像光学系统和具有该类型的成像光学系统的微光刻投射曝光设备

Country Status (8)

Country Link
US (3) US8576376B2 (enExample)
EP (2) EP2533104B1 (enExample)
JP (1) JP5337159B2 (enExample)
KR (2) KR101592136B1 (enExample)
CN (2) CN102819197B (enExample)
DE (1) DE102008042917A1 (enExample)
TW (1) TWI391704B (enExample)
WO (1) WO2009052932A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102819197B (zh) 2007-10-26 2016-06-22 卡尔蔡司Smt有限责任公司 成像光学系统、投射曝光设备、微结构部件及其产生方法
JP5902884B2 (ja) 2007-10-26 2016-04-13 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系及びこの種の結像光学系を含むマイクロリソグラフィ用の投影露光装置
DE102007051671A1 (de) 2007-10-26 2009-05-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
DE102009046685A1 (de) 2009-11-13 2011-05-26 Carl Zeiss Smt Gmbh Abbildende Optik
JP5756121B2 (ja) * 2009-12-14 2015-07-29 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系
DE102010001336B3 (de) 2010-01-28 2011-07-28 Carl Zeiss SMT GmbH, 73447 Anordnung und Verfahren zur Charakterisierung der Polarisationseigenschaften eines optischen Systems
WO2012013241A1 (en) 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type
DE102010039745A1 (de) * 2010-08-25 2012-03-01 Carl Zeiss Smt Gmbh Abbildende Optik
DE102010043498A1 (de) * 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
DE102011076752A1 (de) 2011-05-31 2012-12-06 Carl Zeiss Smt Gmbh Abbildende Optik
DE102012208793A1 (de) * 2012-05-25 2013-11-28 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithographie mit einer derartigen abbildenden Optik
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
DE102014223811B4 (de) 2014-11-21 2016-09-29 Carl Zeiss Smt Gmbh Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils
DE102015221983A1 (de) * 2015-11-09 2017-05-11 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik
CN108152940B (zh) * 2016-12-05 2021-04-27 佳能株式会社 反射折射光学系统、照明光学系统、曝光装置
DE102017215664A1 (de) 2017-09-06 2019-03-07 Carl Zeiss Smt Gmbh Optisches System für eine Projektionsbelichtungsanlage
US10533823B1 (en) * 2018-10-27 2020-01-14 Lewis Smith Tension gun for firing arrows
JP2022096461A (ja) * 2020-12-17 2022-06-29 キヤノン株式会社 光学系及び面分光装置
DE102024203605A1 (de) * 2024-04-18 2025-10-23 Carl Zeiss Smt Gmbh Abbildende Optik für die Projektionslithographie

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737137A (en) * 1996-04-01 1998-04-07 The Regents Of The University Of California Critical illumination condenser for x-ray lithography
US6867913B2 (en) * 2000-02-14 2005-03-15 Carl Zeiss Smt Ag 6-mirror microlithography projection objective
CN1894615A (zh) * 2003-12-24 2007-01-10 株式会社尼康 投影光学系统以及具有该投影光学系统的曝光装置

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
US4804258A (en) 1986-05-05 1989-02-14 Hughes Aircraft Company Four mirror afocal wide field of view optical system
GB2197962A (en) 1986-11-10 1988-06-02 Compact Spindle Bearing Corp Catoptric reduction imaging apparatus
IL113789A (en) 1994-05-23 1999-01-26 Hughes Aircraft Co A non-focusing device with three hinged mirrors and a corrective mirror
US5473263A (en) 1994-12-19 1995-12-05 Advanced Micro Devices, Inc. Negative feedback to reduce voltage oscillation in CMOS output buffers
JPH09213618A (ja) * 1996-01-31 1997-08-15 Canon Inc 投影露光装置及びそれを用いたデバイスの製造方法
US7186983B2 (en) * 1998-05-05 2007-03-06 Carl Zeiss Smt Ag Illumination system particularly for microlithography
EP1035445B1 (de) * 1999-02-15 2007-01-31 Carl Zeiss SMT AG Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage
US6600552B2 (en) 1999-02-15 2003-07-29 Carl-Zeiss Smt Ag Microlithography reduction objective and projection exposure apparatus
US7151592B2 (en) * 1999-02-15 2006-12-19 Carl Zeiss Smt Ag Projection system for EUV lithography
US6985210B2 (en) * 1999-02-15 2006-01-10 Carl Zeiss Smt Ag Projection system for EUV lithography
US6033079A (en) * 1999-03-15 2000-03-07 Hudyma; Russell High numerical aperture ring field projection system for extreme ultraviolet lithography
JP2001185480A (ja) * 1999-10-15 2001-07-06 Nikon Corp 投影光学系及び該光学系を備える投影露光装置
JP4143236B2 (ja) 1999-10-15 2008-09-03 キヤノン株式会社 画像形成装置
EP1093021A3 (en) 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
KR100787525B1 (ko) 2000-08-01 2007-12-21 칼 짜이스 에스엠티 아게 6 거울-마이크로리소그래피 - 투사 대물렌즈
DE10052289A1 (de) 2000-10-20 2002-04-25 Zeiss Carl 8-Spiegel-Mikrolithographie-Projektionsobjektiv
US6785051B2 (en) 2001-07-18 2004-08-31 Corning Incorporated Intrinsic birefringence compensation for below 200 nanometer wavelength optical lithography components with cubic crystalline structures
DE10139177A1 (de) * 2001-08-16 2003-02-27 Zeiss Carl Objektiv mit Pupillenobskuration
US20050059617A1 (en) * 2001-09-17 2005-03-17 Takeshi Imanishi Novel anitsense oligonucleotide derivatives against to hepatitis c virus
JP2004022945A (ja) 2002-06-19 2004-01-22 Canon Inc 露光装置及び方法
JP2004158786A (ja) 2002-11-08 2004-06-03 Canon Inc 投影光学系及び露光装置
JP3938040B2 (ja) * 2002-12-27 2007-06-27 キヤノン株式会社 反射型投影光学系、露光装置及びデバイス製造方法
JP2004252363A (ja) * 2003-02-21 2004-09-09 Canon Inc 反射型投影光学系
JP2004252358A (ja) 2003-02-21 2004-09-09 Canon Inc 反射型投影光学系及び露光装置
JP2005057154A (ja) 2003-08-07 2005-03-03 Canon Inc 露光装置
TWI311691B (en) 2003-10-30 2009-07-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1697798A2 (en) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projection objective having a high aperture and a planar end surface
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
ATE411543T1 (de) 2004-12-15 2008-10-15 Europ Agence Spatiale Weitwinkel-vierspiegelteleskop mit asphärischen ausserachsenspiegeln
DE102005042005A1 (de) * 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
WO2006069725A1 (de) 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges objektiv mit obskurierter pupille
WO2006094729A2 (en) * 2005-03-08 2006-09-14 Carl Zeiss Smt Ag Microlithography projection system with an accessible diaphragm or aperture stop
EP1889110A1 (en) 2005-05-13 2008-02-20 Carl Zeiss SMT AG A six-mirror euv projection system with low incidence angles
FR2899698A1 (fr) 2006-04-07 2007-10-12 Sagem Defense Securite Dispositif de collecte de flux de rayonnement electromagnetique dans l'extreme ultraviolet
DE102006017336B4 (de) 2006-04-11 2011-07-28 Carl Zeiss SMT GmbH, 73447 Beleuchtungssystem mit Zoomobjektiv
US20080118849A1 (en) 2006-11-21 2008-05-22 Manish Chandhok Reflective optical system for a photolithography scanner field projector
EP1930771A1 (en) 2006-12-04 2008-06-11 Carl Zeiss SMT AG Projection objectives having mirror elements with reflective coatings
EP1950594A1 (de) * 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
JP5902884B2 (ja) 2007-10-26 2016-04-13 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系及びこの種の結像光学系を含むマイクロリソグラフィ用の投影露光装置
CN102819197B (zh) * 2007-10-26 2016-06-22 卡尔蔡司Smt有限责任公司 成像光学系统、投射曝光设备、微结构部件及其产生方法
DE102007051671A1 (de) 2007-10-26 2009-05-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737137A (en) * 1996-04-01 1998-04-07 The Regents Of The University Of California Critical illumination condenser for x-ray lithography
US6867913B2 (en) * 2000-02-14 2005-03-15 Carl Zeiss Smt Ag 6-mirror microlithography projection objective
CN1894615A (zh) * 2003-12-24 2007-01-10 株式会社尼康 投影光学系统以及具有该投影光学系统的曝光装置

Also Published As

Publication number Publication date
KR101515663B1 (ko) 2015-04-27
US20140036246A1 (en) 2014-02-06
KR101592136B1 (ko) 2016-02-04
CN101836164A (zh) 2010-09-15
KR20100102586A (ko) 2010-09-24
WO2009052932A1 (en) 2009-04-30
US20100231885A1 (en) 2010-09-16
CN101836164B (zh) 2013-03-13
DE102008042917A1 (de) 2009-04-30
KR20150006019A (ko) 2015-01-15
EP2203787A1 (en) 2010-07-07
TW200921145A (en) 2009-05-16
EP2533104B1 (en) 2016-05-11
CN102819197A (zh) 2012-12-12
EP2533104A1 (en) 2012-12-12
TWI391704B (zh) 2013-04-01
US20160004165A1 (en) 2016-01-07
US8576376B2 (en) 2013-11-05
EP2203787B1 (en) 2014-05-14
JP2011502347A (ja) 2011-01-20
US9152056B2 (en) 2015-10-06
JP5337159B2 (ja) 2013-11-06

Similar Documents

Publication Publication Date Title
CN102819197B (zh) 成像光学系统、投射曝光设备、微结构部件及其产生方法
CN104914561B (zh) 成像光学系统、投射曝光设备、制造组件的方法和组件
JP5156698B2 (ja) リソグラフィ装置およびデバイス製造方法
US9678438B2 (en) Illumination system of a microlithographic projection exposure apparatus
TWI673515B (zh) 用於將物場成像於像場的投影光學單元以及包含此投影光學單元的投影曝光裝置
JP6146918B2 (ja) 結像光学系及びこの種の結像光学系を含むマイクロリソグラフィ用の投影露光装置
US9939733B2 (en) Image-forming optical system, exposure apparatus, and device producing method
CN107111242B (zh) Euv投射光刻的照明光学单元
CN102341738B (zh) 成像光学部件以及具有该类型成像光学部件的用于微光刻的投射曝光装置
US8064040B2 (en) Projection objective, projection exposure apparatus and reflective reticle for microlithography
US9933710B2 (en) Projection exposure method and projection exposure apparatus
TW200919108A (en) Illumination optical apparatus, exposure apparatus, and device manufacturing method
EP1522893A2 (en) Illumination optical system and exposure apparatus having the same
CN102171614B (zh) 具有至少两个操作状态的微光刻投射曝光设备
US10281823B2 (en) Illumination system of a microlithographic projection exposure apparatus
WO2003041134A1 (en) Illumination optical device, exposure device, and exposure method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant