CN102810613A - 电流扩散电极、半导体发光器件及其制备方法 - Google Patents
电流扩散电极、半导体发光器件及其制备方法 Download PDFInfo
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CN201110142451.5A CN102810613B (zh) | 2011-05-30 | 2011-05-30 | 电流扩散电极、半导体发光器件及其制备方法 |
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CN201110142451.5A CN102810613B (zh) | 2011-05-30 | 2011-05-30 | 电流扩散电极、半导体发光器件及其制备方法 |
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CN102810613A true CN102810613A (zh) | 2012-12-05 |
CN102810613B CN102810613B (zh) | 2016-04-13 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206893A (zh) * | 2016-07-15 | 2016-12-07 | 厦门乾照光电股份有限公司 | 一种提高ito电流扩展的发光二极管及其制作方法 |
CN106683983A (zh) * | 2017-01-12 | 2017-05-17 | 福建中科晶创光电科技有限公司 | 一种去除刻蚀后基片表面光刻胶的方法及实施装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001068734A (ja) * | 1999-08-25 | 2001-03-16 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
CN1365153A (zh) * | 2001-01-12 | 2002-08-21 | 联铨科技股份有限公司 | 发光二极管 |
CN1993837A (zh) * | 2004-07-29 | 2007-07-04 | 昭和电工株式会社 | 用于半导体发光器件的正电极 |
US20090315063A1 (en) * | 2008-06-19 | 2009-12-24 | Seoul Opto Device Co., Ltd | Light emitting device and method of manufacturing the same |
US20100314657A1 (en) * | 2009-06-12 | 2010-12-16 | Min-Hsun Hsieh | Optoelectronic device |
CN102024894A (zh) * | 2009-09-23 | 2011-04-20 | Lg伊诺特有限公司 | 发光器件和发光器件封装 |
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2011
- 2011-05-30 CN CN201110142451.5A patent/CN102810613B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001068734A (ja) * | 1999-08-25 | 2001-03-16 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
CN1365153A (zh) * | 2001-01-12 | 2002-08-21 | 联铨科技股份有限公司 | 发光二极管 |
CN1993837A (zh) * | 2004-07-29 | 2007-07-04 | 昭和电工株式会社 | 用于半导体发光器件的正电极 |
US20090315063A1 (en) * | 2008-06-19 | 2009-12-24 | Seoul Opto Device Co., Ltd | Light emitting device and method of manufacturing the same |
US20100314657A1 (en) * | 2009-06-12 | 2010-12-16 | Min-Hsun Hsieh | Optoelectronic device |
CN102024894A (zh) * | 2009-09-23 | 2011-04-20 | Lg伊诺特有限公司 | 发光器件和发光器件封装 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206893A (zh) * | 2016-07-15 | 2016-12-07 | 厦门乾照光电股份有限公司 | 一种提高ito电流扩展的发光二极管及其制作方法 |
CN106206893B (zh) * | 2016-07-15 | 2018-05-25 | 厦门乾照光电股份有限公司 | 一种提高ito电流扩展的发光二极管及其制作方法 |
CN106683983A (zh) * | 2017-01-12 | 2017-05-17 | 福建中科晶创光电科技有限公司 | 一种去除刻蚀后基片表面光刻胶的方法及实施装置 |
CN106683983B (zh) * | 2017-01-12 | 2019-07-02 | 福建中科晶创光电科技有限公司 | 一种去除刻蚀后基片表面光刻胶的方法及实施装置 |
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CN102810613B (zh) | 2016-04-13 |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
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